CN204118067U - Directly be packaged in the LED chip encapsulation architecture of radiator - Google Patents

Directly be packaged in the LED chip encapsulation architecture of radiator Download PDF

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Publication number
CN204118067U
CN204118067U CN201420417174.3U CN201420417174U CN204118067U CN 204118067 U CN204118067 U CN 204118067U CN 201420417174 U CN201420417174 U CN 201420417174U CN 204118067 U CN204118067 U CN 204118067U
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China
Prior art keywords
led chip
radiator
led
directly
encapsulation architecture
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Expired - Fee Related
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CN201420417174.3U
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Chinese (zh)
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王伟奉
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Individual
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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  • Led Device Packages (AREA)

Abstract

The utility model discloses and be a kind ofly directly packaged in the single of radiator and multiple LED chip encapsulation architecture, relate to the encapsulation technology of LED, particularly relate to the encapsulation technology that LED chip is directly packaged in radiator, for significantly improving the temperature treatment of LED chip and array, solve the heat dissipation problem of high light LED illuminator and display device, thus the lumen improving LED exports and extends its life-span, simplifies LED technique, reduces packaging cost simultaneously.This technical scheme is directly substrate with radiator, and LED chip is directly fixed in spreader surface by heat-conductive solid crystal glue, forms common luminous array between each LED package unit by being electrically connected.LED chip and array are covered by adjust colour temperature within sealing, improve the encapsulation architecture of luminous efficiency and protection LED.

Description

Directly be packaged in the LED chip encapsulation architecture of radiator
Technical field
The utility model relates to LED technology, especially relates to the encapsulation technology that LED chip and array are directly packaged in radiator.
Background technology
In recent years, the technical development of solid state LED (light-emitting diode, Light Emitting Diode) light source is very fast, applies also increasingly extensive.Compare with gaseous discharge lamp with conventional incandescent, LED light source light efficiency be high, the life-span is long, start fast, antidetonation is good, with the obvious advantage, be applied to more and more in all kinds of lighting device and display device, but the heat dissipation problem of LED annoyings industry always.In order to the maintenance of the theoretic extra long life and light efficiency that realize LED, PN junction temperature need be controlled in less than 85 DEG C usually, too high junction temperature is the main cause of existing LED illumination product premature failure, studies have found that when knot surface temperature rises 10 DEG C, the luminous flux of LED can decline 10%, and its life-span also can reduce 50%.In practical application, require that the knot surface temperature of LED is more low better.
The SMD paster type encapsulation devices such as existing LED light device and the many employings 3020,3528,5050 of display device, exist that clean surface temperature is high, particle is many, volume is large, cost is high and the problem such as easy generation dazzle.Relatively new COB(Chip on Board) and MCOB(Multi-Chips on Board) encapsulation technology is then directly LED chip is encapsulated in aluminium base, copper base, on ceramic substrate or silicon substrate, by reducing thermal resistance to improve the luminous intensity of unit are, but the base plate for packaging of COB and MCOB needs in addition and independently radiator is connected, between both, the transition at interface inevitably result in the generation of extra resistance, thus heat transfer efficiency is reduced, also just the problem of LED as heat point source cannot effectively be solved, have impact on the life-span of LED and the maintenance of light efficiency, also limit the lifting of LED chip electric current and the raising of whole LED array power simultaneously.
Utility model content
For the deficiency of existing encapsulating structure in heat radiation, the utility model proposes a kind of encapsulation technology LED chip being directly packaged in radiator, this technology is directly using radiator as substrate, eliminate aluminium base, copper base, ceramic substrate or silicon substrate that conventional COB and MCOB encapsulates, therefore compare with MCOB encapsulation technology with existing SMD, COB, thermal resistance can be dropped to lower.
Particularly, this encapsulation scheme includes a radiator, at least one LED chip, and this single or multiple LED chip is directly fixed on this spreader surface by heat-conductive solid crystal glue.
Described LED encapsulation structure, it is characterized in that one of them makes radiator by having the metal material of high-termal conductivity, Inorganic Non-metallic Materials, macromolecular material and composite material, preferred material is the metal such as aluminium, copper or conducting alloy; The heat radiation part of radiator without given shape, but can be processed into zigzag usually; Mutually bondd by one deck heat-conductive solid crystal glue between LED chip and radiator; The region that LED is not installed on the surface of radiator is covered with an insulating barrier, covers one deck conductive circuit layer again above insulation; Each LED chip unit is electrically connected by gold thread, silver-colored line, aluminum steel or other conductive metal wires or alloy wire each other, and is electrically connected external drive power supply via conductive circuit layer, thus forms luminescence unit or array; LED package unit and array are potted at least one deck sealing.
The upper surface of described radiator can at least be provided with a reflector, and the inner side of reflector is coated with metallic reflector in some instances, and preferred reflector material is silver, also can be metal or other inorganic material that gold, copper, nickel etc. have high reflectance; LED chip is fixed at the bottom of reflector by heat-conductive solid crystal glue.
The upper surface of described radiator also can not establish reflector, and in plane, LED chip is directly directly fixed in the plane of radiator by heat-conductive solid crystal glue; Position and the surrounding of the Surface L ED chip of radiator can be plated with metallic reflector, and preferred reflector material is silver, also can be metal or other inorganic material that gold, copper, nickel etc. have high reflectance.
Described heat-conductive solid crystal glue requires high conductive coefficient, is preferably silica gel, epoxy resin, silicones, insulating cement, conducting resinl, resin glue, elargol or eutectic solder.The preferred golden tin (Au-Sn) of described eutectic solder closes gold, silver tin (Ag-Sn) alloy, copper tin (Cu-Sn), tin cream or other high thermal conductivity alloy solders as SAC (Sn-Ag-Cu), Sillim's copper (Sn-Au-Cu) or Sillim's silver (Sn-Au-Ag) alloy.
Described sealing is the mixture of fluorescent material and glue.Described glue material has the feature of high transmission rate, high index of refraction, good fluidity, easily solidification, can preferably silica gel, epoxy resin, silicones, resin glue, polyurethane, polycarbonate, polymethyl methacrylate or glass, the form after its solidification can be solid, gelinite, elastomer or resinite.Described adhesive layer is enclosed by fence, the preferred silica gel of fence material, resin, plastics or glass.
Described LED package unit also can have independently adhesive layer, and this adhesive layer surface is lenticular or flat, in order to change beam characteristics and to improve light efficiency.
The utility model reduce further the thermal resistance of LED package device, is easier to the control of PN junction surface temperature, is conducive to LED light device and display device life-time dilatation.Because heat radiation is improved, the LED light emission device of equal-wattage can use less LED chip and encapsulation unit, thus while improving reliability, reduce packaging cost, and be of value to the miniaturization of LED illuminating module, the luminous intensity of unit are is improved.
Accompanying drawing explanation
Fig. 1 is basic structure and the first embodiment cross sectional representation of the utility model encapsulation architecture.
Fig. 2 is the cross sectional representation of the second embodiment of the utility model encapsulation architecture.
Fig. 3 is the cross sectional representation of the 3rd embodiment of the utility model encapsulation architecture.
Fig. 4 is the cross sectional representation of the 4th embodiment of the utility model encapsulation architecture.
Embodiment
The utility model proposes a kind of encapsulation architecture being directly packaged in radiator, comprise and be directly used as substrate and can with the radiator of reflector and the LED chip with horizontal state structure, one deck reflector can be coated with as silver layer, layer gold or nickel dam in reflector, to increase light reflection, at the bottom of the LED chip of bipolar electrode is placed in glass, between at the bottom of LED chip and cup, one deck heat-conductive solid crystal glue is had to be used for fixing LED chip.Radiator also can not be with reflector, and is directly fixed in its surface by LED chip.
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Fig. 1 is basic structure of the present utility model and the first embodiment schematic diagram, and LED chip 10 wherein has common horizontal state structure.In this encapsulation architecture, radiator 12 is directly used as base plate for packaging, and the shape of its heat radiation part is not limited to zigzag in figure, and its material can be aluminium or copper, also can be other heat-conducting metals or alloy.The upper surface of radiator has dug single or multiple reflector 14, can be silver coated with the transmitting adding high light inside each reflector, also gold-plated, nickel etc. can have metal or other inorganic material of high reflectance.The region overlay that spreader surface is not provided with reflector has an insulating barrier 16 and conductive circuit layer 18, and conductive circuit layer two ends 20 and 22 are electrically connected positive pole and the negative pole of LED drive power output respectively.The substrate of LED chip passes through heat-conductive solid crystal glue 24 with bonding at the bottom of the cup of reflector, heat-conductive solid crystal glue prioritizing selection silica gel, epoxy resin, silicones, insulating cement, conducting resinl, resin glue, elargol or eutectic solder.The positive pole 26 on the top of LED chip and negative pole 28 are electrically connected by the pad 32 of gold thread, silver-colored line, aluminum steel or alloy wire 30 and conductive layer, with form single led luminescence unit or can be jointly luminous LED array; For the LED array that quantity is larger, they can be divided into many groups, the LED unit within each group can be connected mutually, and is connected in parallel between each group again.Further, as shown in the figure, LED unit and array are filled with and has one deck heat conduction sealing 34, in order to adjust the colour temperature of light, improve light efficiency and protection LED chip.This sealing is enclosed by fence 36, makes the surfaces being flat shape of sealing, and the material of fence can be silica gel, resin, plastics or glass.Sealing is mixed by fluorescent material and glue, and first-selected glue can select one from silica gel, epoxy resin, silicones, resin glue, polyurethane, polycarbonate, polymethyl methacrylate or glass.
Example shown in Fig. 2 is similar to the example of earlier figures 1.Similarly, be directly fixed at the bottom of reflector by heat-conductive solid crystal glue 44 using radiator 40 as base plate for packaging and the LED chip 42 of horizontal state, inside reflector, can metallic reflector be coated with.Difference is in this example, and each reflector LED unit is all coated with independently adhesive layer 46, and adhesive layer is that lenticular is in order to protect each encapsulation unit and adjust irradiating light beam characteristic and improve light efficiency.Adhesive layer also can make other shapes as flat according to actual optical requirement.Heat-conductive solid crystal glue used is consistent with the aforementioned material being in Fig. 1, example is used with adhesive material.
In order to reduce the consumption of fluorescent material and reduce the working temperature of fluorescent material, can isolate using fluorescent material with as the LED grain of heat point source, shown in Fig. 3 is the example of this application.With example class shown in Fig. 1 seemingly, radiator 50 is directly as substrate, and the LED chip 52 of horizontal state is directly placed at the bottom of reflector, between have one deck heat-conductive solid crystal glue 54 for bonding mutual at the bottom of LED chip and reflector.Metallic reflector can be coated with inside reflector, and heat-conductive solid crystal glue material is consistent with the crystal-bonding adhesive selected in Fig. 1 example.LED grain is encapsulated in reflector by sealing 56, and sealing 56 is above the common fluorescent material glue-line 58 of one deck.The preferred silica gel of material of sealing, epoxy resin, silicones, resin glue, polyurethane, polycarbonate, polymethyl methacrylate or glass, and phosphor gel can include fluorescent material and water-absorbing resin.Equally, example similar to Figure 2, can be covered with independently phosphor gel make it in lens or flat above each reflector LED unit.
Shown in Fig. 4 is the 4th example of the present utility model.In this example, the surface of radiator 60 does not arrange reflector, and in plane, its position at LED and surrounding can be coated with a metallic reflector, and LED chip 62 is directly fixed on a surface of a heat sink by heat-conductive solid crystal glue 64.Each LED chip is connected by gold thread, silver-colored line, aluminum steel or alloy wire 66, is formed and is electrically connected.All LED chips are covered by sealing 68, and sealing is enclosed by fence 70.The material of metallic reflector in this example, heat-conductive solid crystal glue, sealing and fence is identical with the material used in Fig. 1 example.
The encapsulation architecture of novelty described in the utility model eliminates COB and MCOB and encapsulates aluminium base used, copper base, ceramic substrate or silicon substrate and the tack coat between substrate and radiator, thereby reduce extra resistance, be very beneficial for the heat radiation of heat point source LED chip, thus effectively can maintain the luminous efficiency of LED light source, improve the life-span that its reliability also can extend LED illumination and display unit.
Above-described embodiment and accompanying drawing are in order to be set forth in content of the present utility model, but not define product structure of the present utility model and form, any those of ordinary skill in the art all likely do suitably change to it and modify, and these changes and modification all can not regard as and depart from patent category of the present utility model.

Claims (8)

1. be directly packaged in a LED chip encapsulation architecture for radiator, comprise radiator and at least one LED chip, it is characterized in that: this LED chip is directly bondd by heat-conductive solid crystal glue and is fixed on this spreader surface;
Described encapsulation architecture also comprises:
One insulating barrier, this insulating barrier is positioned at the region that this spreader surface does not install the chip of this LED; And
One conductive circuit layer, this conductive circuit layer is positioned at above this insulating barrier.
2. be directly packaged in as claimed in claim 1 the LED chip encapsulation architecture of radiator, it is characterized in that: this radiator material be metal material, Inorganic Non-metallic Materials, macromolecular material and composite material one of them make.
3. be directly packaged in the LED chip encapsulation architecture of radiator as claimed in claim 1, it is characterized in that: this LED chip exists electric connection each other.
4. be directly packaged in as claimed in claim 1 the LED chip encapsulation architecture of radiator, it is characterized in that: this heat-conductive solid crystal glue be silica gel, epoxy resin, silicones, insulating cement, conducting resinl, resin glue, elargol and eutectic solder one of them.
5. the LED chip encapsulation architecture being directly packaged in radiator as described in any one of claim 1-4, is characterized in that: this LED chips all are covered by least one deck sealing, and this adhesive layer is surrounded by fence.
6. the LED chip encapsulation architecture being directly packaged in radiator as described in any one of claim 1-4, is characterized in that: this LED chip is covered by independently sealing separately.
7. the LED chip encapsulation architecture being directly packaged in radiator as described in any one of claim 1-4, is characterized in that: the upper surface of this radiator is provided with at least one reflector, and this LED chip single or multiple is fixed at the bottom of this reflector by this heat-conductive solid crystal glue.
8. be directly packaged in the LED chip encapsulation architecture of radiator as claimed in claim 7, it is characterized in that: the inner surface of this reflector is coated with layer of metal reflector.
CN201420417174.3U 2014-07-25 2014-07-25 Directly be packaged in the LED chip encapsulation architecture of radiator Expired - Fee Related CN204118067U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105552194A (en) * 2016-03-23 2016-05-04 中山芯达电子科技有限公司 LED (Light-Emitting Diode) chip packaging body
CN105932019A (en) * 2016-05-09 2016-09-07 电子科技大学 Large power LED structure adopting COB packaging
CN106229311A (en) * 2016-08-22 2016-12-14 成都众乐泰科技有限公司 A kind of production technology of LED light emitting diode
CN107654951A (en) * 2017-10-31 2018-02-02 顾哲锴 A kind of energy-saving desk lamp
CN111029452A (en) * 2019-12-10 2020-04-17 合肥彩虹蓝光科技有限公司 Ultraviolet light emitting diode packaging structure and packaging method thereof, and ultraviolet lamp

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105552194A (en) * 2016-03-23 2016-05-04 中山芯达电子科技有限公司 LED (Light-Emitting Diode) chip packaging body
CN105932019A (en) * 2016-05-09 2016-09-07 电子科技大学 Large power LED structure adopting COB packaging
CN106229311A (en) * 2016-08-22 2016-12-14 成都众乐泰科技有限公司 A kind of production technology of LED light emitting diode
CN106229311B (en) * 2016-08-22 2019-06-07 成都众乐泰科技有限公司 A kind of production technology of LED light emitting diode
CN107654951A (en) * 2017-10-31 2018-02-02 顾哲锴 A kind of energy-saving desk lamp
CN111029452A (en) * 2019-12-10 2020-04-17 合肥彩虹蓝光科技有限公司 Ultraviolet light emitting diode packaging structure and packaging method thereof, and ultraviolet lamp

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150121

Termination date: 20150725

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