WO2005067064A1 - Light emitting diode and light emitting diode lamp - Google Patents

Light emitting diode and light emitting diode lamp Download PDF

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Publication number
WO2005067064A1
WO2005067064A1 PCT/CN2004/001353 CN2004001353W WO2005067064A1 WO 2005067064 A1 WO2005067064 A1 WO 2005067064A1 CN 2004001353 W CN2004001353 W CN 2004001353W WO 2005067064 A1 WO2005067064 A1 WO 2005067064A1
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WO
WIPO (PCT)
Prior art keywords
light
emitting diode
transmitting
layer
emitting
Prior art date
Application number
PCT/CN2004/001353
Other languages
French (fr)
Chinese (zh)
Inventor
Shichao Ge
Original Assignee
Shichao Ge
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CNB2003101137821A external-priority patent/CN100375300C/en
Priority claimed from CNU2004200028386U external-priority patent/CN2677742Y/en
Priority claimed from CNU2004200048110U external-priority patent/CN2674654Y/en
Priority claimed from CNU2004200229525U external-priority patent/CN2696133Y/en
Priority claimed from CNU2004200513108U external-priority patent/CN2696134Y/en
Priority claimed from CNU2004200867901U external-priority patent/CN2713647Y/en
Priority claimed from CNU200420009547XU external-priority patent/CN2784927Y/en
Application filed by Shichao Ge filed Critical Shichao Ge
Publication of WO2005067064A1 publication Critical patent/WO2005067064A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F21V19/0015—Fastening arrangements intended to retain light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F21V23/001—Arrangement of electric circuit elements in or on lighting devices the elements being electrical wires or cables
    • F21V23/002—Arrangements of cables or conductors inside a lighting device, e.g. means for guiding along parts of the housing or in a pivoting arm
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/60—Cooling arrangements characterised by the use of a forced flow of gas, e.g. air
    • F21V29/67—Cooling arrangements characterised by the use of a forced flow of gas, e.g. air characterised by the arrangement of fans
    • F21V29/677—Cooling arrangements characterised by the use of a forced flow of gas, e.g. air characterised by the arrangement of fans the fans being used for discharging
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
    • F21V29/763—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • the invention relates to a light-emitting diode and a light-emitting diode lamp, particularly a high-power light-emitting diode and a light-emitting diode lamp with low thermal resistance, high color rendering index, variable color temperature, high efficiency, and long life, which are used for lighting and information display. Wait. Background technique
  • low-power light-emitting diodes have been widely used for signal indication, large-screen display, and the like. It has the advantages of long life, good color, firmness, etc. At the same time, high-power light-emitting diodes have also been gradually used for special lighting.
  • the light-emitting efficiency of the existing light-emitting diodes is still not high. About 80% of the input electric power will be converted into heat. This heat mainly comes from light-emitting diode chips, especially high-power light-emitting diodes. The large amount of heat generated by the chips leads to the The temperature rises rapidly, the luminous efficiency is reduced, and the life is shortened. Therefore, how to efficiently conduct and dissipate a large amount of heat so that the light-emitting diode works at a lower temperature is one of the keys to manufacturing high-power light-emitting diodes and light-emitting diode lamps.
  • the prior art applies the luminescent powder around the chip to obtain a uniform light color distribution of the emitted light (for example, US Patent No. 6,252,254; 6,417,019; 6,580,097; 6,642,652), but the luminescent powder is on the chip Around, high temperature, low luminous efficiency, short life, especially high-power light-emitting diodes. How to reduce the working temperature of the light emitting powder to make the light emitting diode with high efficiency and long life is another key to manufacturing high power light emitting diode and light emitting diode lamp.
  • a white light emitting diode with a luminescent powder the luminescent powder is coated on the inner or outer surface of a lens above a chip in order to reduce the operating temperature of the luminescent powder (for example, US Patent No. 6,429,583 and Patent WO2004021461).
  • Light-emitting diodes due to the large chip area of the light-emitting diode, and the size of the lens should generally increase in proportion to the increase in the chip area, so the lens is large, bulky, high cost, and the lens medium is prone to yellowing, which shortens the life of the light-emitting diode; meanwhile, There is a lens above the light-emitting diode chip.
  • the prior art white light emitting diode has a low color rendering index, generally only about 75, and improving the light emitting powder can increase the color rendering index, but at the same time, it will cause a significant decrease in light emitting efficiency. How to improve the color rendering index while having high luminous efficiency is another key to manufacturing high-quality high-power light-emitting diodes and light-emitting diode lamps.
  • the color temperature of white light emitting diodes is immutable. How to make high-power light emitting diodes and light emitting diode lamps with variable color temperatures from cool white to warm white is another subject of light emitting diode lighting.
  • red, blue, green, or yellow-colored white light emitting diodes have the advantages of high light emitting efficiency and can be made into white light emitting diodes with different color temperatures, but the light color distribution of the output light is not uniform.
  • This is another subject of manufacturing such high power white light emitting diodes and light emitting diode lamps.
  • the metal base of a high-power light-emitting diode is generally regarded as a heat sink. In fact, it is necessary for a high-power light-emitting diode device and a light-emitting diode lamp, and an external heat dissipation device.
  • the metal base of the light-emitting diode is a heat-conducting device.
  • an aluminum-based circuit board is commonly used as a heat-conducting device.
  • This aluminum substrate is alloyed aluminum, which has a thermal conductivity of only about 25 to 40% of copper, and has poor mechanical strength and easy deformation.
  • the heat-conducting between the aluminum substrate and the external heat sink The large layer thickness, large thermal resistance, and easy failure lead to the failure of the light emitting diode.
  • the aluminum substrate has a low reflectance and is difficult to be plated with silver. Therefore, it is difficult to obtain a high-efficiency light-emitting diode for a light-emitting diode whose chip is directly mounted on the aluminum substrate. Summary of the invention
  • a first object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode. It includes at least one light-emitting diode chip and a high-thermal-conductivity metal-based heat-conducting device.
  • the light-emitting diode chip is mounted on the metal substrate in a face-up manner (ie, the pn junction is on the light-emitting metal base) or a flip-chip (ie, the pn junction is on the light-emitting metal base).
  • the light-emitting surface of the light-emitting diode chip is led out by a lead or a metal-based insulator; the light-emitting surface of the light-emitting diode chip has a light-transmitting medium layer, and a light-transmitting cover above the light-transmitting medium layer. There is a layer of luminescent powder on the inner surface.
  • the at least one light emitting diode chip is at least one light emitting diode chip that emits blue light or ultraviolet light.
  • the highly thermally conductive metal-based and metal-based insulator is a copper-based circuit board, and the light reflecting surface is a silver-plated surface.
  • the metal-based circuit board has at least one screw hole or screw, and is tightly and reliably thermally connected with an external heat sink by screws or rivets.
  • a second object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode. It includes at least one light-emitting diode chip and a high-thermal-conductivity metal-based heat-conducting device.
  • the light-emitting diode chip is mounted on the metal substrate in the form of a pn junction on the light emitting side or a flip chip (that is, the pn junction on the light emitting metal base).
  • the light-emitting surface of the light-emitting diode chip is led out by the lead wire and a conductor insulated from the metal base.
  • the light-emitting surface of the light-emitting diode chip has a light-transmitting medium layer, and a light-emitting bubble shell is arranged above the light-transmitting medium layer.
  • a light emitting powder layer is provided on the inner surface of the cover shell.
  • a third object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode, which includes at least one light-emitting diode chip that emits blue or ultraviolet light and at least one and at least one colored visible light-emitting diode chip, By adjusting the relative luminous intensity of each chip, the light color, color temperature, and color rendering index of the output light can be adjusted, and a white light emitting diode with a high color rendering index, a different color temperature, or a variable color temperature can be manufactured.
  • a fourth object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode, which includes at least one group of red, blue, green, or yellow light-emitting diode chips.
  • the light-transmitting cover or light-transmitting bubble shell mixes each luminous color to obtain different color temperatures, the color temperature is variable, Light-emitting diodes displaying white or other colored light with an exponential color.
  • a fifth object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode lamp, which includes At least one high-power light emitting diode of the present invention, a heat sink, a driving circuit and its casing, and an electrical connector.
  • a thermally conductive glue such as a silver paddle, between the metal-based heat-conducting device of the light-emitting diode and the heat sink, and they are fixed to each other with screws or rivets.
  • the high-power light-emitting diode includes: at least one light-emitting diode chip, a metal base of high thermal conductivity material, the light-emitting diode chip is mounted on a light reflecting surface or a light reflecting bowl on the metal base, and the light-emitting diode chip
  • the pn junction is mounted toward the metal base, or the substrate of the light emitting diode chip is mounted toward the metal base; the electrode of the light emitting diode chip is led out through a lead wire or a conductor insulated from the metal base; the light emitting surface of the light emitting diode chip is transparent.
  • An optical medium layer, a light-transmitting cover or a light-transmitting shell is provided above the light-transmitting medium layer, and a light-emitting powder layer is provided on the inner surface of the light-transmitting cover or the light-transmissive bubble, and an air gap or Fill with a second light-transmitting substance.
  • the metal base of the high thermal conductivity material is a metal base of copper, copper alloy or other metal base circuit boards of high thermal conductivity material; the metal base circuit board has at least one through hole or at least one notch in its periphery,
  • the light-emitting diode is fixed on the external heat sink with screws or rivets; the rivets are solid or hollow, and the lead wires of the light-emitting diodes pass from the center of the hollow-core rivets to the rear of the light-emitting diodes;
  • the shape of the metal-based circuit board is Circle, square, rectangle or polygon.
  • the metal-based circuit board is provided with electronic components for controlling the light emission of each light-emitting diode chip.
  • the light reflecting surface or the light reflecting bowl on the metal base is a silver-plated surface, and the light emitting diode chip is fixed on the metal base light reflecting surface or the light reflecting bowl with a high thermal conductivity adhesive or solder.
  • the at least one light-emitting diode chip is at least one light-emitting diode chip that emits blue or ultraviolet light;
  • the light-emitting powder layer is at least one layer, and each layer has at least one light-emitting light-emitting powder layer, and the light-emitting powder
  • the light-emitting powder of the layer contains a light-transmitting medium.
  • the luminescent powder layer further includes a protective layer.
  • the light-transmitting medium layer is a temperature-resistant, UV-resistant silica gel, epoxy resin or plastic medium layer; it also contains a light scattering agent layer.
  • the light-transmitting cover or light-transmitting bubble shell is made of glass or plastic, is transparent or diffuse, and has a shape of a circle, a square, or other geometric shapes, and a shape of a light exit surface thereof is a spherical surface, a curved surface, or a flat surface; It is fixed to the metal base with glue or a fixed frame.
  • a small lens or a small prism optical structure is further provided on the transparent cover or the transparent bubble shell.
  • the invention also provides a high-power light-emitting diode, including: at least one group of light-emitting diode chips emitting red, blue, green, or yellow, a metal base made of a material of thermal conductivity, and the light-emitting side of the light-emitting diode chip is transparent.
  • a light-scattering layer is provided on the inner surface of the cover or the light-transmitting bubble shell; or the light-transmitting cover itself is a light-scattering light-transmitting cover; the light-transmitting bubble itself is a light-scattering light-transmitting bubble shell;
  • the light emitting colors are mixed to obtain light emitting diodes with different color temperatures, variable color temperatures, and high color rendering index white light or other color light and variable color light.
  • the invention also provides a high-power light-emitting diode, comprising: at least one light-emitting diode chip, a metal substrate of high thermal conductivity material, and a light-reflecting metal electrode on a pn junction of the light-emitting diode chip is directly adhered to the metal through a high thermal conductivity adhesive.
  • the high thermal conductivity adhesive is a fine diamond powder adhesive or an oxide thermal conductive adhesive;
  • a light-emitting diode chip electrode on a metal substrate has an insulating layer and a conductive layer at a welding position, and the electrodes of the light-emitting diode chip are conductively bonded.
  • the agent is drawn from the conductive layer; the conductive adhesive is solder or conductive glue mixed with silver beads, gold beads, or copper beads.
  • the invention also provides a high-power light-emitting diode, comprising: at least one light-emitting diode chip that emits blue light and at least one, each at least one light-emitting diode chip that emits other colored visible light, a metal substrate with a high thermal conductivity material, and the light-emitting
  • the light emitting surface of the diode chip has a light-transmitting medium layer, a light-transmitting cover or a light-transmitting bubble shell above the light-transmitting medium layer, and a light-emitting powder layer on the inner surface of the light-transmitting cover or light-transmitting bubble shell.
  • An air gap or a second light-transmitting substance is filled between the luminescent powder layers.
  • the present invention also provides a high-power light-emitting diode lamp, including: at least one high-power light-emitting diode of the present invention, a heat sink, a driver and its casing, and an electrical connection device;
  • the electrical connection device is an ordinary tungsten filament lamp, or Spiral, socket-type lamp caps and / or plugs of energy-saving lamps;
  • the light-emitting diodes are tightly fixed to a heat sink with a high thermal conductivity adhesive layer therebetween;
  • the heat sink is a heat sink with a heat sink,
  • the input of the driver is connected to an external power source through a lead and an electrical connection device, and its output is connected to a light emitting diode through a lead to light up the light emitting diode.
  • the connection between the light emitting diode and the electrical connection device may also be provided with a material of high thermal conductivity. Copper plate. It also includes at least one small electric fan installed in the heat sink, and a driver drives the small electric
  • the high-power light-emitting diode and the high-power light-emitting diode of the invention have simple structure, low thermal resistance, simple luminescent powder coating process, uniform luminescent powder layer, low luminescent powder temperature, high luminous efficiency, long life, and white light color rendering index High, good color mixing, variable color temperature, suitable for mass production, low cost, etc .; can be made into monochrome, color mixing, color, variable color power LED, high color rendering index and variable color temperature white light power LED; Used for lighting, decorative lights, solar lights, mining lights, table lamps, bedside lights, vehicle lights, stage lights and displays. BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic structural diagram of an embodiment of a high-power light-emitting diode according to the present invention.
  • FIG. 2 is a schematic structural diagram of another embodiment of a high-power light-emitting diode according to the present invention.
  • FIG. 3 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 4 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 5 is a schematic structural diagram of an embodiment of a high-power light-emitting diode according to the present invention.
  • FIG. 6 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 7 is a schematic structural diagram of another embodiment of a high-power light-emitting diode according to the present invention.
  • FIG. 8 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 9 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 10 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 11 is a schematic structural diagram of an embodiment of a high-power LED lamp according to the present invention.
  • metal-based circuit board 3 metal-based 4
  • insulating layer 5 conductive layer 6—light reflecting surface 7-—high thermal conductivity glue or solder
  • thermo conductive glue 29 small silver beads 30—a luminescent powder and light transmitting medium
  • FIG. 1 is a schematic structural diagram of a high-power light-emitting diode according to an embodiment of the present invention. It includes at least one light emitting diode chip 1, at least one metal-based circuit board 2, and the metal substrate 3 of the circuit board 2 is a high thermal conductivity board such as copper.
  • the metal substrate has an insulating layer 4 and a conductive layer 5, and the chip is mounted on The light reflecting surface on the metal base or the light reflecting bowl 6 (shown as an example of the light reflecting surface in FIG.
  • the light emitting diode chip 1 is fixed on the metal base 3 with a high thermal conductivity adhesive or solder 7, and the reflecting surface 6 is High-reflectivity surfaces such as silver-plated surfaces, the electrodes of the light-emitting diode chip are connected to the conductive layer 5 through a lead wire 8, and the conductive layer 5 is also used to connect an external power source, and the light-emitting diode can be turned on by turning on the external power source;
  • the at least one light-emitting diode chip 1 is at least one light-emitting diode chip that emits blue or ultraviolet light
  • the light-emitting powder layer 11 is at least one layer, and each layer has at least one kind of light emitting
  • the luminescent powder layer 11 includes a luminescent powder and a light-transmitting medium, and may also have a protective layer.
  • the luminescent powder can absorb the blue light generated by the chip and emit light such as yellow and mix with the blue light to generate white light, or absorb the chip.
  • the generated ultraviolet light generates white light
  • the light-transmitting medium layer 9 is a temperature-resistant and ultraviolet-resistant medium layer, such as silica gel, epoxy resin, or plastic; it may also contain white or transparent light scattering powder 12, For example, titanium dioxide, alumina, magnesium oxide and other metal oxide powders, silver powder, etc .
  • the light-transmitting cover 10 is made of glass or plastic and is transparent or diffuse, and its shape may be round, square or other geometric shapes. Shape, the shape of the light exit surface can be spherical, curved or flat, and there can also be a series of small lenses and small prisms and other optical structures, it is fixed on the metal base 3 with glue 13, the fixing glue 13 can be transparent
  • the optical medium layer 9 is the same.
  • the metal-based circuit board 2 has at least one through hole 15 or at least one notch in the periphery thereof, which is used to send
  • the photodiode is fixed on the external heat sink 18 with screws 16 or rivets 17; when rivets are used, the rivets can be solid or hollow cores, and the lead wires 19 of the light emitting diodes can be led from the center of the hollow core rivets to the light emitting diodes.
  • Rear there is a thermally conductive adhesive 20 between the metal-based circuit board 2 and the heat sink 18.
  • the shape of the metal-based circuit board 2 may be circular, square, rectangular, polygonal, or the like.
  • the shell of the at least one light-emitting diode chip 1 is at least a group of red, blue, green, or yellow light-emitting diode chips, and a light-transmitting cover or light-transmitting bubble shell (as shown in FIG. 5) on the light emitting side of the chip is on the inner surface.
  • a light-scattering layer 11a or the light-transmitting cover or the light-transmitting bubble shell itself is light-scattering, and the light-transmitting cover or the light-transmissive bubble shell mixes each luminous color to obtain white light with different color temperature, variable color temperature, and high display index color. Light-emitting diodes of other colors.
  • FIG. 2 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention.
  • the light-transmitting cover 10a is a planar light-transmitting cover; the light-emitting powder layer 11 on the inner surface of the light-transmitting cover 10a has a light-transmitting medium layer 9 between the chip 1 and the chip 1; No lens is formed; the light reflecting surface is a light reflecting bowl 6.
  • the other numbers in FIG. 2 have the same meaning as in FIG. 1.
  • FIG. 3 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that the high-thermal-conductivity metal base 3 is a high-thermal-conductivity metal base with at least one screw 21 and is made of copper, copper alloy, aluminum, etc., and is used to more closely use screws or rivets for light-emitting diodes.
  • FIG. 4 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention.
  • said high thermal conductivity metal substrate having at least one screw 3 to 21, and having at least one through hole 15a;
  • La of the LED chip is flip-chip, i.e., chip 24 flip-chip solder la first
  • the silicon or other substrate 25 is fixed on the light reflecting bowl 6 of the metal base 3 with a high thermal conductivity adhesive or solder 7.
  • the other numbers in FIG. 4 have the same meanings as in FIG. 3.
  • FIG. 5 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention.
  • the transparent cover above the transparent medium layer 9 is a transparent bubble 10a.
  • the other numbers in Fig. 5 have the same meanings as those in Figs.
  • FIG. 6 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that the light reflecting metal electrode 26 on the pn junction of the chip 1b is directly adhered to the metal base 3 through a high thermal conductivity adhesive 27, and the high thermal conductivity adhesive is a fine diamond powder adhesive, an oxide thermal conductive adhesive, etc .; On the metal base 3, the chip electrode is welded with an insulating layer 4 and a conductive layer 5.
  • the electrodes of the LED chip are led out of the conductive layer 5 through a conductive adhesive 28;
  • the conductive adhesive 28 is a mixture of small silver beads, small gold beads or small
  • the smaller beads 29 can be used to make the high thermal conductivity layer 27 very thin, thereby obtaining a light-emitting diode with a small thermal resistance.
  • the metal electrode 26 does not need to be insulated from the metal base 3, the high thermal conductivity layer 27 may also use a conductive adhesive.
  • the other numbers in FIG. 6 have the same meaning as those shown in FIG. 1.
  • FIG. 7 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention.
  • the at least one light emitting diode chip is at least one blue light emitting diode chip 1 and at least one colored visible light, at least one visible light emitting diode chip lc each, and the chip lc can be used to adjust the color temperature and color rendering index of the output light.
  • the other numbers in FIG. 7 have the same meaning as those shown in FIG. 1.
  • FIG. 8 is a schematic structural diagram of an embodiment of the high-power light-emitting diode with adjustable color temperature and color rendering index of the present invention shown in FIG. 7.
  • 30 is a light-transmitting medium layer with luminescent powder.
  • the other numbers in Figure 8 have the same meaning as those shown in Figures 1, 3, and 5.
  • FIG. 9 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that a light-transmitting cover 10a is provided above the light-emitting diode chips lb and lc, and an electronic component 31 is further installed on the metal base circuit board for controlling the light emission of each light-emitting diode chip.
  • the other numbers in Figure 9 have the same meaning as those shown in Figures 2 and 6.
  • FIG. 10 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that the light-emitting diode chips lb and lc are provided with a light-transmitting bubble shell 10b above them.
  • the other numbers in Fig. 9 have the same meaning as those shown in Figs.
  • FIG. 11 is a schematic diagram showing the principle and structure of an embodiment of a light-emitting diode lamp manufactured using the high-power light-emitting diode of the present invention. It includes at least one high-power light-emitting diode of the present invention, a heat-dissipating device 33, a driver 34 and its casing 35, and an electrical connection device 36, such as spiral-type, socket-type lamp caps of different sizes, such as ordinary tungsten filament lamps.
  • the light emitting diode 32 is tightly fixed on the heat sink 33 with a high thermal conductivity adhesive layer 37 therebetween; the heat sink 33 is a heat sink 38 with a heat sink, and it may also have at least one small electric fan 39
  • the input of the driver 34 is connected to the external power supply via the lead 40 and the electrical connection device 36, and its output is connected to the light emitting diode 1 via the lead 41 for lighting the light emitting diode 1.
  • the driver 6 drives the small electric fan 10 via the lead 22 at the same time.
  • the heat sink 38 and the small electric fan 39 can effectively dissipate the heat generated by the light emitting diode 32 and the driver 34.
  • connection between the light emitting diode 32 and the electrical connection device 36 can also be provided.
  • the copper plate 42 with high thermal conductivity enables the light-emitting diode to work at a lower temperature to make a high-power, high-efficiency, long-life light-emitting diode lamp.

Abstract

A high power light emitting diode (LED) includes at least a LED chip which emits blue light, UV light or at least one kind of visible light, and a metal substrate. The chip is mounted on the reflective surface of metal substrate faceupwardly or facedownwardly. A transmission shell or a transmissive cover is provided on the transmission medium layer as a light output element, and the inner surface of which is coated a luminescent powder layer or a scattering layer. An air layer is provided between the light output element and the transmission layer. The light output element can mix the light from different chips and the light from the luminescent powder layer. The metal substrate is a high thermal conductivity metal substrate with a circuit board. There is at least a screw or a screw hole for connecting with additional heat sinks. The LED has many advantages, such as simple configuration, low thermal resistance, simple coating process of luminescent powder, uniform luminescent powder layer, low temperature of luminescent powder, high efficiency, long life, high chromogenic index of white light, good color mixture, variable color temperature and low cost.

Description

发光二极管和发光二极管灯 发明领域  Light emitting diode and light emitting diode lamp
本发明涉及一种发光二极管和发光二极管灯， 特别是一种低热阻、 高显色指数、 色温可变、 高效率、 长寿命的大功率发光二极管和发光二极管灯， 用于照明和信息显 不等。 背景技术  The invention relates to a light-emitting diode and a light-emitting diode lamp, particularly a high-power light-emitting diode and a light-emitting diode lamp with low thermal resistance, high color rendering index, variable color temperature, high efficiency, and long life, which are used for lighting and information display. Wait. Background technique
目前，小功率发光二极管已被广泛用于信号指示、大屏幕显示等。它具有寿命长、 颜色好、 牢固等优点； 同时， 大功率发光二极管也已被逐步用于特^^照明。  At present, low-power light-emitting diodes have been widely used for signal indication, large-screen display, and the like. It has the advantages of long life, good color, firmness, etc. At the same time, high-power light-emitting diodes have also been gradually used for special lighting.
现有发光二极管的发光效率还不高，约有 80%的输入电功率将转变为热，此热量 主要来源于发光二极管芯片， 特别是大功率发光二极管， 其芯片产生的大量热量， 导 致发光二极管的温度迅速上升， 发光效率下降、 寿命缩短。 因此， 如何将大量热量有 效地传导和散发掉， 使发光二极管工作在较低的温度、 是制造大功率发光二极管和发 光二极管灯的关键之一。  The light-emitting efficiency of the existing light-emitting diodes is still not high. About 80% of the input electric power will be converted into heat. This heat mainly comes from light-emitting diode chips, especially high-power light-emitting diodes. The large amount of heat generated by the chips leads to the The temperature rises rapidly, the luminous efficiency is reduced, and the life is shortened. Therefore, how to efficiently conduct and dissipate a large amount of heat so that the light-emitting diode works at a lower temperature is one of the keys to manufacturing high-power light-emitting diodes and light-emitting diode lamps.
对于有发光粉的白光发光二极管， 现有技术将发光粉凃布于芯片四周， 以获得光 色分布均匀的出射光（例如美国专利 No.6,252,254; 6,417,019; 6,580,097; 6,642,652) , 但发光粉处于芯片四周、 温度很高、 发光效率低、 寿命短， 特别是大功率的发光二极 管。 如何降低发光粉的工作温度、 以制成效率高、 寿命长的发光二极管是制造大功率 发光二极管和发光二极管灯的又一关键。  For a white light emitting diode with a luminescent powder, the prior art applies the luminescent powder around the chip to obtain a uniform light color distribution of the emitted light (for example, US Patent No. 6,252,254; 6,417,019; 6,580,097; 6,642,652), but the luminescent powder is on the chip Around, high temperature, low luminous efficiency, short life, especially high-power light-emitting diodes. How to reduce the working temperature of the light emitting powder to make the light emitting diode with high efficiency and long life is another key to manufacturing high power light emitting diode and light emitting diode lamp.
现有技术的有发光粉的白光发光二极管、为降低发光粉的工作温度将发光粉凃布 于芯片上方透镜的内或外表面上 （例如美国专利 No.6,429,583 和专利 WO2004021461 ) o对于功率大的发光二极管、 由于发光二极管芯片面积大、透镜的尺 寸应大体上按芯片面积增大的比例增大， 因而透镜体积很大、 笨重、 成本高、 透镜介 质易发黄使发光二极管寿命缩短； 同时， 发光二极管芯片上方有透镜、 对于由多芯片 构成的有发光粉的白光发光二极管、 难于得到光色分布均匀的出射光， 更难于用多色 芯片混色得到白光、 彩色、 可变色、 高显色指数和可变色温的大功率发光二极管。  In the prior art, a white light emitting diode with a luminescent powder, the luminescent powder is coated on the inner or outer surface of a lens above a chip in order to reduce the operating temperature of the luminescent powder (for example, US Patent No. 6,429,583 and Patent WO2004021461). Light-emitting diodes, due to the large chip area of the light-emitting diode, and the size of the lens should generally increase in proportion to the increase in the chip area, so the lens is large, bulky, high cost, and the lens medium is prone to yellowing, which shortens the life of the light-emitting diode; meanwhile, There is a lens above the light-emitting diode chip. For white light-emitting diodes with luminescent powder composed of multi-chips, it is difficult to obtain light with uniform light color distribution. It is even more difficult to obtain white light, color, variable color, and high color rendering index by using multi-color chips. And high-power LED with variable color temperature.
现有技术的白光发光二极管的显色指数低、一般仅约 75，改进发光粉可提高显色 指数， 但同时将导致发光效率显著下降。 如何提高显色指数同时又有高的发光效率， 这是制造高质量的大功率发光二极管和发光二极管灯的又一关键。  The prior art white light emitting diode has a low color rendering index, generally only about 75, and improving the light emitting powder can increase the color rendering index, but at the same time, it will cause a significant decrease in light emitting efficiency. How to improve the color rendering index while having high luminous efficiency is another key to manufacturing high-quality high-power light-emitting diodes and light-emitting diode lamps.
现有技术的白光发光二极管的色温都是不可变的， 如何制成色温可从冷白至暖白 色可变的大功率发光二极管和发光二极管灯是发光二极管照明的又一课题。  In the prior art, the color temperature of white light emitting diodes is immutable. How to make high-power light emitting diodes and light emitting diode lamps with variable color temperatures from cool white to warm white is another subject of light emitting diode lighting.
现有技术用红蓝绿或加黄混色的白光发光二极管具有发光效率高、可制成不同色 温白光发光二极管等优点， 但其输出光的光色分布不均匀。 这是制造这类大功率白光 发光二极管和发光二极管灯的又一课题。 现有技术的大功率发光二极管的金属基通常被视为散热器， 实际上对于大功率发 光二极管装置和发光二极管灯、外加散热装置是必需的， 发光二极管的金属基是一个 导热装置， 因此它必须要能和外加散热装置有密切而长期可靠的热接触。现有技术常 用铝基电路板作导热装置， 此铝基板为合金铝，其导热率仅约为铜的 25〜40%， 且机 械强度差、 易变形， 铝基板和外加散热装置之间的导热层厚度大、 热阻大、 易失效导 致发光二极管失效。 此外， 铝基板的反射率低、 难于镀银， 因此芯片直接安装在铝基 板上的发光二极管难于得到高效率的发光二极管。 发明内容 In the prior art, red, blue, green, or yellow-colored white light emitting diodes have the advantages of high light emitting efficiency and can be made into white light emitting diodes with different color temperatures, but the light color distribution of the output light is not uniform. This is another subject of manufacturing such high power white light emitting diodes and light emitting diode lamps. In the prior art, the metal base of a high-power light-emitting diode is generally regarded as a heat sink. In fact, it is necessary for a high-power light-emitting diode device and a light-emitting diode lamp, and an external heat dissipation device. The metal base of the light-emitting diode is a heat-conducting device. It must have close and long-term reliable thermal contact with the external heat sink. In the prior art, an aluminum-based circuit board is commonly used as a heat-conducting device. This aluminum substrate is alloyed aluminum, which has a thermal conductivity of only about 25 to 40% of copper, and has poor mechanical strength and easy deformation. The heat-conducting between the aluminum substrate and the external heat sink The large layer thickness, large thermal resistance, and easy failure lead to the failure of the light emitting diode. In addition, the aluminum substrate has a low reflectance and is difficult to be plated with silver. Therefore, it is difficult to obtain a high-efficiency light-emitting diode for a light-emitting diode whose chip is directly mounted on the aluminum substrate. Summary of the invention
本发明的第一个目的是提供一种大功率、 高效率、 长寿命发光二极管。 它包括有 至少一个发光二极管芯片，一个高热导率金属基导热装置，发光二极管芯片被正装（即 p-n结在光出射方） 或倒装（即 p-n结在光出射金属基方）在金属基上的光反射面上， 发光二极管芯片的电极经引线或与金属基绝缘的导电体引出； 发光二极管芯片的光出 射面上有透光介质层， 透光介质层上方有一透光盖， 透光盖的内表面上有发光粉层。  A first object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode. It includes at least one light-emitting diode chip and a high-thermal-conductivity metal-based heat-conducting device. The light-emitting diode chip is mounted on the metal substrate in a face-up manner (ie, the pn junction is on the light-emitting metal base) or a flip-chip (ie, the pn junction is on the light-emitting metal base). The light-emitting surface of the light-emitting diode chip is led out by a lead or a metal-based insulator; the light-emitting surface of the light-emitting diode chip has a light-transmitting medium layer, and a light-transmitting cover above the light-transmitting medium layer. There is a layer of luminescent powder on the inner surface.
所述至少一个发光二极管芯片为至少一个发蓝光或紫外光的发光二极管芯片。 所述高热导金属基和与金属基绝缘的导电体为铜基电路板，所述光反射面为镀 银面。  The at least one light emitting diode chip is at least one light emitting diode chip that emits blue light or ultraviolet light. The highly thermally conductive metal-based and metal-based insulator is a copper-based circuit board, and the light reflecting surface is a silver-plated surface.
所述金属基电路板有至少一个螺丝孔或螺丝， 用螺丝或铆钉和外加散热器紧密 且可靠地热连接。  The metal-based circuit board has at least one screw hole or screw, and is tightly and reliably thermally connected with an external heat sink by screws or rivets.
本发明的第二个目的是提供一种大功率、 高效率、 长寿命发光二极管。 它包括 有至少一个发光二极管芯片， 一个高热导率金属基导热装置， 发光二极管芯片被正装 (即 p-n结在光出射方）或倒装 （即 p-n结在光出射金属基方）在金属基上的光反射 面上， 发光二极管芯片的电极经引线和与金属基绝缘的导电体引出； 发光二极管芯片 的光出射面上有透光介质层， 透光介质层上方有一透光泡壳， 透光盖泡壳的内表面上 有发光粉层。  A second object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode. It includes at least one light-emitting diode chip and a high-thermal-conductivity metal-based heat-conducting device. The light-emitting diode chip is mounted on the metal substrate in the form of a pn junction on the light emitting side or a flip chip (that is, the pn junction on the light emitting metal base). The light-emitting surface of the light-emitting diode chip is led out by the lead wire and a conductor insulated from the metal base. The light-emitting surface of the light-emitting diode chip has a light-transmitting medium layer, and a light-emitting bubble shell is arranged above the light-transmitting medium layer. A light emitting powder layer is provided on the inner surface of the cover shell.
本发明的第三个目的是提供一种大功率、 高效率、 长寿命发光二极管， 它包括 至少一个发蓝光或紫外光的发光二极管芯片和至少一种、每种至少一个有色可见光发 光二极管芯片， 调节所述各芯片的相对发光强度即可调节输出光的光色、 色温和显色 指数， 可制成高显色指数、 不同色温或色温可变的白光发光二极管。  A third object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode, which includes at least one light-emitting diode chip that emits blue or ultraviolet light and at least one and at least one colored visible light-emitting diode chip, By adjusting the relative luminous intensity of each chip, the light color, color temperature, and color rendering index of the output light can be adjusted, and a white light emitting diode with a high color rendering index, a different color temperature, or a variable color temperature can be manufactured.
本发明的第四个目的是提供一种大功率、 高效率、 长寿命发光二极管， 它包括 至少一组红、 蓝、 绿或加黄的发光二极管芯片， 芯片光出射方的透光盖或透光泡壳的 内表面上有发光散射层， 或透光盖或透光泡壳本身为光散射的， 透光盖或透光泡壳壳 将各发光色混色、 得到不同色温、 色温可变、 髙显指数色的白光或其它色光的发光二 极管。  A fourth object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode, which includes at least one group of red, blue, green, or yellow light-emitting diode chips. There is a light-emitting scattering layer on the inner surface of the light bubble shell, or the light-transmitting cover or light-transmitting bubble shell itself is light-scattering. The light-transmitting cover or light-transmitting bubble shell mixes each luminous color to obtain different color temperatures, the color temperature is variable, Light-emitting diodes displaying white or other colored light with an exponential color.
本发明的第五个目的是提供一种大功率、 高效率、 长寿命发光二极管灯， 它包括 至少一个本发明的大功率发光二极管， 一个散热装置， 一个驱动电路及其外壳和一个 电连接器。 所述发光二极管的金属基导热装置和散热器之间有导热胶、 例如银桨、 并 用螺丝或铆钉相互固定。 本发明的技术方案如下： A fifth object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode lamp, which includes At least one high-power light emitting diode of the present invention, a heat sink, a driving circuit and its casing, and an electrical connector. There is a thermally conductive glue, such as a silver paddle, between the metal-based heat-conducting device of the light-emitting diode and the heat sink, and they are fixed to each other with screws or rivets. The technical scheme of the present invention is as follows:
本发明提供的大功率发光二极管， 包括： 至少一个发光二极管芯片， 一个高热导 率材质的金属基， 发光二极管芯片被安装在金属基上的光反射面或光反射碗上， 所述 发光二极管芯片的 p-n结朝向所述金属基安装， 或发光二极管芯片的基板朝向所述金 属基安装； 发光二极管芯片的电极经引线或与金属基绝缘的导电体引出； 发光二极管 芯片的光出射面上有透光介质层， 透光介质层上方有透光盖或透光泡壳， 透光盖或透 光泡壳的内表面上有发光粉层，透光介质层和发光粉层之间为空气隙或充填第二透光 物质。  The high-power light-emitting diode provided by the present invention includes: at least one light-emitting diode chip, a metal base of high thermal conductivity material, the light-emitting diode chip is mounted on a light reflecting surface or a light reflecting bowl on the metal base, and the light-emitting diode chip The pn junction is mounted toward the metal base, or the substrate of the light emitting diode chip is mounted toward the metal base; the electrode of the light emitting diode chip is led out through a lead wire or a conductor insulated from the metal base; the light emitting surface of the light emitting diode chip is transparent. An optical medium layer, a light-transmitting cover or a light-transmitting shell is provided above the light-transmitting medium layer, and a light-emitting powder layer is provided on the inner surface of the light-transmitting cover or the light-transmissive bubble, and an air gap or Fill with a second light-transmitting substance.
所述的高热导率材质的金属基为铜、 铜合金或其它高热导率材质的金属基电路 板的金属基； 所述金属基电路板上有至少一个通孔或其周边有至少一个缺口， 发光二 极管用螺丝或铆钉固定在外加的散热器上； 所述铆钉为实芯或空芯的， 发光二极管的 引出线从空芯铆钉中央穿过引向发光二极管后方；金属基电路板的形状为圆形、方形、 矩形或多边形。  The metal base of the high thermal conductivity material is a metal base of copper, copper alloy or other metal base circuit boards of high thermal conductivity material; the metal base circuit board has at least one through hole or at least one notch in its periphery, The light-emitting diode is fixed on the external heat sink with screws or rivets; the rivets are solid or hollow, and the lead wires of the light-emitting diodes pass from the center of the hollow-core rivets to the rear of the light-emitting diodes; the shape of the metal-based circuit board is Circle, square, rectangle or polygon.
所述的金属基电路板上装有用于控制各发光二极管芯片发光的电子元件。 所述 金属基上的光反射面或光反射碗为镀银面， 发光二极管芯片用高热导率胶或焊锡固定 在金属基光反射面或光反射碗上。所述的至少一个发光二极管芯片为至少一个发蓝光 或紫外光的发光二极管芯片； 所述的发光粉层为至少一层、 每层至少有发一种光色的 发光粉层，所述发光粉层的发光粉中含有透光介质。所述的发光粉层还包括有保护层。 所述的透光介质层为耐温、 抗紫外硅胶、 环氧树脂或塑料介质层； 其中也含有光散射 剂层。所述的透光盖或透光泡壳由玻璃或塑料制成，为透明或漫射的，其形状为圆形、 方形或其它几何形状， 其光出射面的形状为球面、 曲面或平面； 它被用胶或固定框固 定在金属基上。 所述的透光盖或透光泡壳上还进一步设有小透镜或小棱镜光学结构。  The metal-based circuit board is provided with electronic components for controlling the light emission of each light-emitting diode chip. The light reflecting surface or the light reflecting bowl on the metal base is a silver-plated surface, and the light emitting diode chip is fixed on the metal base light reflecting surface or the light reflecting bowl with a high thermal conductivity adhesive or solder. The at least one light-emitting diode chip is at least one light-emitting diode chip that emits blue or ultraviolet light; the light-emitting powder layer is at least one layer, and each layer has at least one light-emitting light-emitting powder layer, and the light-emitting powder The light-emitting powder of the layer contains a light-transmitting medium. The luminescent powder layer further includes a protective layer. The light-transmitting medium layer is a temperature-resistant, UV-resistant silica gel, epoxy resin or plastic medium layer; it also contains a light scattering agent layer. The light-transmitting cover or light-transmitting bubble shell is made of glass or plastic, is transparent or diffuse, and has a shape of a circle, a square, or other geometric shapes, and a shape of a light exit surface thereof is a spherical surface, a curved surface, or a flat surface; It is fixed to the metal base with glue or a fixed frame. A small lens or a small prism optical structure is further provided on the transparent cover or the transparent bubble shell.
本发明还提供的大功率发光二极管， 包括： 至少一组发红、 蓝、 绿或加黄的发 光二极管芯片， 一个髙热导率材质的金属基， 所述发光二极管芯片光出射方的透光盖 或透光泡壳的内表面上有光散射层； 或者透光盖本身为光散射透光盖； 透光泡壳本身 为光散射透光泡壳； 透光盖或透光泡壳将各发光色混色， 得到不同色温、 色温可变、 高显指数色的白光或其它色光、 可变色光的发光二极管。  The invention also provides a high-power light-emitting diode, including: at least one group of light-emitting diode chips emitting red, blue, green, or yellow, a metal base made of a material of thermal conductivity, and the light-emitting side of the light-emitting diode chip is transparent. A light-scattering layer is provided on the inner surface of the cover or the light-transmitting bubble shell; or the light-transmitting cover itself is a light-scattering light-transmitting cover; the light-transmitting bubble itself is a light-scattering light-transmitting bubble shell; The light emitting colors are mixed to obtain light emitting diodes with different color temperatures, variable color temperatures, and high color rendering index white light or other color light and variable color light.
本发明还提供的大功率发光二极管， 包括： 至少一个发光二极管芯片， 一个高 热导率材质的金属基， 所述发光二极管芯片的 p-n结上的光反射金属电极经高热导率 胶直接粘贴于金属基上， 所述高热导率胶为细金刚石粉胶或氧化物导热胶； 金属基上 的发光二极管芯片电极焊接处有绝缘层和导电层， 发光二极管芯片的电极经导电粘结 剂由导电层引出； 导电粘结剂为混有银珠、 金珠或铜珠的焊锡或导电胶。 The invention also provides a high-power light-emitting diode, comprising: at least one light-emitting diode chip, a metal substrate of high thermal conductivity material, and a light-reflecting metal electrode on a pn junction of the light-emitting diode chip is directly adhered to the metal through a high thermal conductivity adhesive. On the substrate, the high thermal conductivity adhesive is a fine diamond powder adhesive or an oxide thermal conductive adhesive; a light-emitting diode chip electrode on a metal substrate has an insulating layer and a conductive layer at a welding position, and the electrodes of the light-emitting diode chip are conductively bonded. The agent is drawn from the conductive layer; the conductive adhesive is solder or conductive glue mixed with silver beads, gold beads, or copper beads.
本发明还提供的大功率发光二极管， 包括： 至少一个发蓝光的发光二极管芯片 和至少一种、每种至少一个发其它有色可见光的发光二极管芯片， 一个高热导率材质 的金属基， 所述发光二极管芯片的光出射面上有透光介质层， 透光介质层上方有透光 盖或透光泡壳， 透光盖或透光泡壳的内表面上有发光粉层， 透光介质层和发光粉层之 间为空气隙或充填第二透光物质。  The invention also provides a high-power light-emitting diode, comprising: at least one light-emitting diode chip that emits blue light and at least one, each at least one light-emitting diode chip that emits other colored visible light, a metal substrate with a high thermal conductivity material, and the light-emitting The light emitting surface of the diode chip has a light-transmitting medium layer, a light-transmitting cover or a light-transmitting bubble shell above the light-transmitting medium layer, and a light-emitting powder layer on the inner surface of the light-transmitting cover or light-transmitting bubble shell. An air gap or a second light-transmitting substance is filled between the luminescent powder layers.
本发明还提供的大功率发光二极管灯， 包括： 至少一个本发明的大功率发光二极 管， 一个散热装置， 一个驱动器及其外壳， 一个电连接装置； 所述电连接装置为普通 钨丝灯、或节能灯的螺旋型、插口型灯头和 /或插头；所述发光二极管被紧密固定在散 热装置上， 二者之间有高热导率胶层； 所述散热装置为带有散热片的散热器， 驱动器 的输入经引线和电连接装置与外电源相连， 它的输出经引线与发光二极管相连， 用于 点亮发光二极管， 所述发光二极管和电连接装置连接处也可设有高热导率材质的铜 板。还包括至少一个小电扇，安装在所述散热装置内，驱动器经引线驱动所述小电扇。  The present invention also provides a high-power light-emitting diode lamp, including: at least one high-power light-emitting diode of the present invention, a heat sink, a driver and its casing, and an electrical connection device; the electrical connection device is an ordinary tungsten filament lamp, or Spiral, socket-type lamp caps and / or plugs of energy-saving lamps; the light-emitting diodes are tightly fixed to a heat sink with a high thermal conductivity adhesive layer therebetween; the heat sink is a heat sink with a heat sink, The input of the driver is connected to an external power source through a lead and an electrical connection device, and its output is connected to a light emitting diode through a lead to light up the light emitting diode. The connection between the light emitting diode and the electrical connection device may also be provided with a material of high thermal conductivity. Copper plate. It also includes at least one small electric fan installed in the heat sink, and a driver drives the small electric fan through a lead.
本发明的大功率型发光二极管及大功率型发光二极管具有结构简单、 热阻低、 发 光粉凃布工艺简单、 发光粉层均匀、 发光粉温度低、 发光效率高、 寿命长、 白光显色 指数高、 混色好、 色温可变、 适合于批量生产、 成本低等优点； 可制成单色、 混色、 彩色、 可变色功率型发光二极管、 高显色指数和可变色温白光功率型发光二极管； 用 于照明、 装饰灯、 太阳能灯、 矿灯、 台灯、 床头灯、 车船灯、 舞台灯和显示等。 附图说明  The high-power light-emitting diode and the high-power light-emitting diode of the invention have simple structure, low thermal resistance, simple luminescent powder coating process, uniform luminescent powder layer, low luminescent powder temperature, high luminous efficiency, long life, and white light color rendering index High, good color mixing, variable color temperature, suitable for mass production, low cost, etc .; can be made into monochrome, color mixing, color, variable color power LED, high color rendering index and variable color temperature white light power LED; Used for lighting, decorative lights, solar lights, mining lights, table lamps, bedside lights, vehicle lights, stage lights and displays. BRIEF DESCRIPTION OF THE DRAWINGS
图 1为本发明的大功率发光二极管的一个实施例的结构示意图。  FIG. 1 is a schematic structural diagram of an embodiment of a high-power light-emitting diode according to the present invention.
图 2为本发明的大功率发光二极管的又一个实施例的结构示意图。  FIG. 2 is a schematic structural diagram of another embodiment of a high-power light-emitting diode according to the present invention.
图 3为本发明的大功率发光二极管的又一个实施例的结构示意图。  FIG. 3 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
图 4为本发明的大功率发光二极管的又一个实施例的结构示意图。  FIG. 4 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
图 5为本发明的大功率发光二极管的一个实施例的结构示意图。  FIG. 5 is a schematic structural diagram of an embodiment of a high-power light-emitting diode according to the present invention.
图 6为本发明的大功率发光二极管的又一个实施例的结构示意图。  FIG. 6 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
图 7为本发明的大功率发光二极管的又一个实施例的结构示意图。  FIG. 7 is a schematic structural diagram of another embodiment of a high-power light-emitting diode according to the present invention.
图 8为本发明的大功率发光二极管的又一个实施例的结构示意图。  FIG. 8 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
图 9为本发明的大功率发光二极管的又一个实施例的结构示意图。  FIG. 9 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
图 10为本发明的大功率发光二极管的又一个实施例的结构示意图。  FIG. 10 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
图 11为本发明的大功率发光二极管灯的一个实施例的结构示意图。  FIG. 11 is a schematic structural diagram of an embodiment of a high-power LED lamp according to the present invention.
其中：  among them:
1一发光二极管芯片 la—倒装发光二极管芯片 lb—倒装发光二极管芯片 lc一可见光发光二极管芯片 1 a light-emitting diode chip la-flip-chip light-emitting diode chip lb-flip-chip light-emitting diode chip lc-visible light-emitting diode chip
2—金属基的电路板 3—金属基 4一绝缘层 5—导电层 6—光反射面 7- -高热导率胶或焊锡 2—metal-based circuit board 3—metal-based 4—insulating layer 5—conductive layer 6—light reflecting surface 7-—high thermal conductivity glue or solder
8—引线 9一透光介质 10-一透光盖  8—lead 9—translucent medium 10—translucent cover
10a—暴平面透光盖 101 ~透光泡壳 11-一发光粉层  10a—Burst surface transparent cover 101 ~ Transparent bubble shell 11-One luminescent powder layer
11a—光散射层 12—散射剂 13- —胶  11a—light scattering layer 12—scattering agent 13-—glue
14一空气 15—通孔 16-一螺丝  14 one air 15 through hole 16 one screw
18—散热器 19-一引出线  18- Radiator 19- One lead
20—导热胶 21—螺丝  20—thermal conductive glue 21—screw
22—引出线 23—固定框 24- 焊锡  22—lead wire 23—fixing frame 24- solder
25—硅基板 26—引出线 27-一导热胶  25—silicon substrate 26—lead line 27—a thermally conductive adhesive
28—导热胶 29—小银珠 30-一发光粉和透光介质  28—thermal conductive glue 29—small silver beads 30—a luminescent powder and light transmitting medium
31—电子元件 32- -大功率发光二极管 33-一散热装置  31—Electronic components 32- -High power light-emitting diode 33-A heat sink
34—驱动器 35— -驱动器外壳 36-一电连接器  34--driver 35 --- driver housing 36-an electrical connector
37—导热胶 38- -散热器 39-一电风扇  37—thermal conductive glue 38--heat sink 39- an electric fan
40—输入线  40—input line
具体实施方式 detailed description
下面将结合附图对本实用新型作详细的介绍： 图 1为本发明的大功率发光二极管 的一个实施例的原理结构示意图。 它包括有至少一个发光二极管芯片 1， 至少一个金 属基的电路板 2， 电路板 2的金属基 3为铜等高热导率板， 金属基上有绝缘层 4和导 电层 5， 芯片被安装在金属基上的光反射面或光反射碗 6上 （图 1所示为光反射面的 例子）， 发光二极管芯片 1被用高热导率胶或焊锡 7固定在金属基 3上， 反射面 6为 镀银面等高反射率面， 发光二极管芯片的电极经引线 8和导电层 5相连， 导电层 5同 时用于连结外电源， 接通外电源即可点亮发光二极管； 发光二极管芯片 1的光出射面 上有透光介质层 9， 透光介质层上方有一透光盖 10， 透光盖 10的内表面上有发光粉 层 11， 透光介质层 9和发光粉层 11之间为空气隙或第二透光物质 14; 所述的至少一 个发光二极管芯片 1为至少一个发蓝光或紫外光的发光二极管芯片； 所述的发光粉层 11为至少一层、 每层至少有一种发光色的发光粉层， 所述发光粉层 11包括有发光粉 和透光介质， 还可有保护层， 发光粉可吸收芯片所产生的蓝光发出黄色等光并与蓝光 混合产生白光、 或吸收芯片所产生的紫外光产生白光； 所述的透光介质层 9为耐温、 抗紫外的介质层， 例如为硅胶、 环氧树脂或塑料等； 其中也可含有白色或透明的光散 射粉 12， 例如钛白粉、 氧化铝、 氧化镁等金属氧化物粉、 银粉等； 所述的透光盖 10 由玻璃或塑料制成， 为透明或漫射的， 其形状可为圆形、 方形或其它几何形状， 其光 出射面的形状可为球面、 曲面或平面， 其上还可有一系列小透镜小棱镜等光学结构， 它被用胶 13固定在金属基 3上， 所述固定胶 13可与透光介质层 9相同。  The present invention will be described in detail below with reference to the accompanying drawings: FIG. 1 is a schematic structural diagram of a high-power light-emitting diode according to an embodiment of the present invention. It includes at least one light emitting diode chip 1, at least one metal-based circuit board 2, and the metal substrate 3 of the circuit board 2 is a high thermal conductivity board such as copper. The metal substrate has an insulating layer 4 and a conductive layer 5, and the chip is mounted on The light reflecting surface on the metal base or the light reflecting bowl 6 (shown as an example of the light reflecting surface in FIG. 1), the light emitting diode chip 1 is fixed on the metal base 3 with a high thermal conductivity adhesive or solder 7, and the reflecting surface 6 is High-reflectivity surfaces such as silver-plated surfaces, the electrodes of the light-emitting diode chip are connected to the conductive layer 5 through a lead wire 8, and the conductive layer 5 is also used to connect an external power source, and the light-emitting diode can be turned on by turning on the external power source; There is a light-transmitting medium layer 9 on the exit surface, a light-transmitting cover 10 above the light-transmitting medium layer, a light-emitting powder layer 11 on the inner surface of the light-transmitting cover 10, and an air gap between the light-transmitting medium layer 9 and the light-emitting powder layer 11. Or a second light-transmitting substance 14; the at least one light-emitting diode chip 1 is at least one light-emitting diode chip that emits blue or ultraviolet light; the light-emitting powder layer 11 is at least one layer, and each layer has at least one kind of light emitting The luminescent powder layer 11 includes a luminescent powder and a light-transmitting medium, and may also have a protective layer. The luminescent powder can absorb the blue light generated by the chip and emit light such as yellow and mix with the blue light to generate white light, or absorb the chip. The generated ultraviolet light generates white light; the light-transmitting medium layer 9 is a temperature-resistant and ultraviolet-resistant medium layer, such as silica gel, epoxy resin, or plastic; it may also contain white or transparent light scattering powder 12, For example, titanium dioxide, alumina, magnesium oxide and other metal oxide powders, silver powder, etc .; the light-transmitting cover 10 is made of glass or plastic and is transparent or diffuse, and its shape may be round, square or other geometric shapes. Shape, the shape of the light exit surface can be spherical, curved or flat, and there can also be a series of small lenses and small prisms and other optical structures, it is fixed on the metal base 3 with glue 13, the fixing glue 13 can be transparent The optical medium layer 9 is the same.
所述金属基电路板 2上有至少一个通孔 15或其周边有至少一个缺口， 用于将发 光二极管用螺丝 16或铆钉 17固定在外加的散热器 18上； 在用铆钉时， 铆钉可为实 芯或空芯的， 发光二极管的引出线 19可从空芯铆钉中央穿过引向发光二极管后方； 金属基电路板 2和散热器 18之间有导热胶 20。 金属基电路板 2的形状可为圆形、 方 形、 矩形、 多边形等。 The metal-based circuit board 2 has at least one through hole 15 or at least one notch in the periphery thereof, which is used to send The photodiode is fixed on the external heat sink 18 with screws 16 or rivets 17; when rivets are used, the rivets can be solid or hollow cores, and the lead wires 19 of the light emitting diodes can be led from the center of the hollow core rivets to the light emitting diodes. Rear; there is a thermally conductive adhesive 20 between the metal-based circuit board 2 and the heat sink 18. The shape of the metal-based circuit board 2 may be circular, square, rectangular, polygonal, or the like.
所述至少一个发光二极管芯片 1壳为至少一组红、蓝、 绿或加黄的发光二极管芯 片， 芯片光出射方的透光盖或透光泡壳（如图 5所示） 的内表面上有光散射层 lla， 或透光盖或透光泡壳本身为光散射的， 透光盖或透光泡壳将各发光色混色、 得到不同 色温、 色温可变、 高显指数色的白光或其它色光的发光二极管。  The shell of the at least one light-emitting diode chip 1 is at least a group of red, blue, green, or yellow light-emitting diode chips, and a light-transmitting cover or light-transmitting bubble shell (as shown in FIG. 5) on the light emitting side of the chip is on the inner surface. There is a light-scattering layer 11a, or the light-transmitting cover or the light-transmitting bubble shell itself is light-scattering, and the light-transmitting cover or the light-transmissive bubble shell mixes each luminous color to obtain white light with different color temperature, variable color temperature, and high display index color. Light-emitting diodes of other colors.
图 2为本发明的大功率发光二极管的又一个实施例的原理结构示意图。其特征在 于所述的透光盖 10a为平面透光盖； 透光盖 10a的内表面上的发光粉层 11和芯片 1 之间有透光介质层 9， 由于透光盖 10a为平面、 并不构成透镜； 所述光反射面为光反 射碗 6。 图 2中其它数字所表示的意义与图 1中的相同。  FIG. 2 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. The light-transmitting cover 10a is a planar light-transmitting cover; the light-emitting powder layer 11 on the inner surface of the light-transmitting cover 10a has a light-transmitting medium layer 9 between the chip 1 and the chip 1; No lens is formed; the light reflecting surface is a light reflecting bowl 6. The other numbers in FIG. 2 have the same meaning as in FIG. 1.
图 3为本发明的大功率发光二极管的又一个实施例的原理结构示意图。其特征在 于所述的高热导率金属基 3为带有至少一个螺丝 21的高热导率金属底座， 由铜、 铜 合金、铝等制成，用于将发光二极管用螺丝或铆钉等更紧密地固定在外加的散热器上； 所述的透光介质层 9和发光粉层 11之间有空气隙或第二透光介质层 14; 所述的发光 二极管的引出线为与金属基 3绝缘的金属薄片或金属线 22，所述的发光二极管的引出 线中的一个也可以是金属基 3 ; 23为绝缘固定框。 图 3中其它数字所表示的意义与图 1中的相同。  FIG. 3 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that the high-thermal-conductivity metal base 3 is a high-thermal-conductivity metal base with at least one screw 21 and is made of copper, copper alloy, aluminum, etc., and is used to more closely use screws or rivets for light-emitting diodes. Fixed on an external heat sink; there is an air gap or a second light-transmitting medium layer 14 between the light-transmitting medium layer 9 and the light-emitting powder layer 11; the lead-out wire of the light-emitting diode is insulated from the metal base 3 Metal foil or metal wire 22, one of the lead-out wires of the light-emitting diode may also be a metal base 3; 23 is an insulating fixed frame. The other numbers in FIG. 3 have the same meaning as in FIG. 1.
图 4为本发明的大功率发光二极管的又一个实施例的原理结构示意图。其特征在 于所述的高热导率金属基 3为带有至少一个螺丝 21、同时带有至少一个通孔 15a. ;所 述发光二极管芯片 la为倒装芯片，即芯片 la先用焊锡 24倒装在硅或其它基板 25上， 再用高热导率胶或焊锡 7固定在金属基 3的光反射碗 6上。 图 4中其它数字所表示的 意义与图 3中的相同。 FIG. 4 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. Wherein said high thermal conductivity metal substrate having at least one screw 3 to 21, and having at least one through hole 15a;. La of the LED chip is flip-chip, i.e., chip 24 flip-chip solder la first The silicon or other substrate 25 is fixed on the light reflecting bowl 6 of the metal base 3 with a high thermal conductivity adhesive or solder 7. The other numbers in FIG. 4 have the same meanings as in FIG. 3.
图 5为本发明的大功率发光二极管的又一个实施例的原理结构示意图。其特征在 于所述的透光介质层 9上方的透光盖为一透光泡壳 10a。 图 5中其它数字所表示的意 义与图 1、 3中的相同。  FIG. 5 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. The transparent cover above the transparent medium layer 9 is a transparent bubble 10a. The other numbers in Fig. 5 have the same meanings as those in Figs.
图 6为本发明的大功率发光二极管的又一个实施例的原理结构示意图。其特征在 于所述的芯片 lb的 p-n结上的光反射金属电极 26经高热导率胶 27直接粘贴于金属基 3上， 所述高热导率胶为细金刚石粉胶、 氧化物导热胶等； 金属基 3上芯片电极焊接 处有绝缘层 4和导电层 5， 发光二极管芯片的电极经导电粘结剂 28由导电层 5引出； 导电粘结剂 28为混有小银珠、 小金珠或小铜珠 29的焊锡或导电胶， 选用较小的小珠 29可使高热导率层 27很薄，从而得到很小热阻的发光二极管。若金属电极 26不需要 和金属基 3绝缘、则高热导率层 27也可用导电粘结剂。图 6中其它数字的意义与图 1 中所示的相同。 图 7为本发明的大功率发光二极管的又一个实施例的原理结构示意图。其特征在 于所述至少一个发光二极管芯片为至少一个发蓝光发光二极管芯片 1和至少一种有色 可见光、 每种至少一个的可见光发光二极管芯片 lc， 芯片 lc可用于调节输出光的色 温和显色指数。 图 7中其它数字的意义与图 1中所示的相同。 FIG. 6 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that the light reflecting metal electrode 26 on the pn junction of the chip 1b is directly adhered to the metal base 3 through a high thermal conductivity adhesive 27, and the high thermal conductivity adhesive is a fine diamond powder adhesive, an oxide thermal conductive adhesive, etc .; On the metal base 3, the chip electrode is welded with an insulating layer 4 and a conductive layer 5. The electrodes of the LED chip are led out of the conductive layer 5 through a conductive adhesive 28; the conductive adhesive 28 is a mixture of small silver beads, small gold beads or small For the solder or conductive adhesive of the copper beads 29, the smaller beads 29 can be used to make the high thermal conductivity layer 27 very thin, thereby obtaining a light-emitting diode with a small thermal resistance. If the metal electrode 26 does not need to be insulated from the metal base 3, the high thermal conductivity layer 27 may also use a conductive adhesive. The other numbers in FIG. 6 have the same meaning as those shown in FIG. 1. FIG. 7 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that the at least one light emitting diode chip is at least one blue light emitting diode chip 1 and at least one colored visible light, at least one visible light emitting diode chip lc each, and the chip lc can be used to adjust the color temperature and color rendering index of the output light. . The other numbers in FIG. 7 have the same meaning as those shown in FIG. 1.
图 8为图 7所示本发明的色温、显色指数可调大功率发光二极管的一个实施例的 原理结构示意图。 图中 30为有发光粉的透光介质层。 图 8中其它数字的意义与图 1、 3、 5中所示的相同。  FIG. 8 is a schematic structural diagram of an embodiment of the high-power light-emitting diode with adjustable color temperature and color rendering index of the present invention shown in FIG. 7. In the figure, 30 is a light-transmitting medium layer with luminescent powder. The other numbers in Figure 8 have the same meaning as those shown in Figures 1, 3, and 5.
图 9为本发明的大功率发光二极管的又一个实施例的原理结构示意图。其特征在 于所述发光二极管芯片 lb和 lc上方有透光盖 10a， 金属基电路板上还装有电子元件 31、 用于控制各发光二极管芯片的发光。 图 9中其它数字的意义与图 2、 6中所示的 相同。  FIG. 9 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that a light-transmitting cover 10a is provided above the light-emitting diode chips lb and lc, and an electronic component 31 is further installed on the metal base circuit board for controlling the light emission of each light-emitting diode chip. The other numbers in Figure 9 have the same meaning as those shown in Figures 2 and 6.
图 10为本发明的大功率发光二极管的又一个实施例的原理结构示意图。 其特征 在于所述发光二极管芯片 lb和 lc上方有透光泡壳 10b。 图 9中其它数字的意义与图 1、 9中所示的相同。  FIG. 10 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that the light-emitting diode chips lb and lc are provided with a light-transmitting bubble shell 10b above them. The other numbers in Fig. 9 have the same meaning as those shown in Figs.
图 11 为用本发明的大功率发光二极管制造的发光二极管灯的一个实施例的原理 结构示意图。它包括有至少一个本发明的大功率发光二极管， 一个散热装置 33， 一个 驱动器 34及其外壳 35，一个电连接装置 36、例如为普通钨丝灯的不同尺寸的螺旋型、 插口型灯头等。所述发光二极管 32被紧密固定在散热装置 33上， 二者之间有高热导 率胶层 37;所述散热装置 33为带有散热片的散热器 38，它还可有至少一个小电扇 39; 驱动器 34的输入经引线 40和电连接装置 36与外电源相连，它的输出经引线 41与发 光二极管 1相连， 用于点亮发光二极管 1， 驱动器 6同时经引线 22驱动小电扇 10。 所述散热器 38和小电扇 39可有效地把发光二极管 32和驱动器 34所产生的热量有效 地发散掉， 为进一步减小灯的热阻、 发光二极管 32和电连接装置 36连接处还可有高 热导率的铜板 42, 从而使发光二极管工作于较低温度， 以制成大功率、 高效率、长寿 命的发光二极管灯。  FIG. 11 is a schematic diagram showing the principle and structure of an embodiment of a light-emitting diode lamp manufactured using the high-power light-emitting diode of the present invention. It includes at least one high-power light-emitting diode of the present invention, a heat-dissipating device 33, a driver 34 and its casing 35, and an electrical connection device 36, such as spiral-type, socket-type lamp caps of different sizes, such as ordinary tungsten filament lamps. The light emitting diode 32 is tightly fixed on the heat sink 33 with a high thermal conductivity adhesive layer 37 therebetween; the heat sink 33 is a heat sink 38 with a heat sink, and it may also have at least one small electric fan 39 The input of the driver 34 is connected to the external power supply via the lead 40 and the electrical connection device 36, and its output is connected to the light emitting diode 1 via the lead 41 for lighting the light emitting diode 1. The driver 6 drives the small electric fan 10 via the lead 22 at the same time. The heat sink 38 and the small electric fan 39 can effectively dissipate the heat generated by the light emitting diode 32 and the driver 34. In order to further reduce the thermal resistance of the lamp, the connection between the light emitting diode 32 and the electrical connection device 36 can also be provided. The copper plate 42 with high thermal conductivity enables the light-emitting diode to work at a lower temperature to make a high-power, high-efficiency, long-life light-emitting diode lamp.
本实用新型要求保护的范围不限于本文中介绍的各实施例，涉及的专门技术是本 专业一般人员所熟悉的， 因此只要了解本实用新型的内容， 可以做各种形式的变换和 代换。  The scope of protection claimed by the present utility model is not limited to the embodiments described herein, and the expertise involved is familiar to those skilled in the art. Therefore, as long as the contents of the present utility model are understood, various forms of substitution and substitution can be made.

Claims

利 要求 Profit requirements
1、 一种大功率发光二极管， 包括： 至少一个发光二极管芯片， 一个高热导率材 质的金属基， 发光二极管芯片被安装在金属基上的光反射面或光反射碗上， 所述发光 二极管芯片的 p-n结朝向所述金属基安装， 或发光二极管芯片的基板朝向所述金属基 安装； 发光二极管芯片的电极经引线或与金属基绝缘的导电体引出； 发光二极管芯片 的光出射面上有透光介质层， 透光介质层上方有透光盖或透光泡壳， 透光盖或透光泡 壳的内表面上有发光粉层， 透光介质层和发光粉层之间为空气隙或充填第二透光物 质。 1. A high-power light-emitting diode, comprising: at least one light-emitting diode chip, a metal substrate of high thermal conductivity material, the light-emitting diode chip being mounted on a light reflecting surface or a light reflecting bowl on the metal base, the light emitting diode chip The pn junction is mounted toward the metal base, or the substrate of the light emitting diode chip is mounted toward the metal base; the electrode of the light emitting diode chip is led out through a lead wire or a conductor insulated from the metal base; the light emitting surface of the light emitting diode chip is transparent. An optical medium layer, which has a light-transmitting cover or a light-transmitting shell above the light-transmitting medium layer, and a light-emitting powder layer on the inner surface of the light-transmitting cover or the light-transmissive bubble, and an air gap or Fill with a second light-transmitting substance.
2、 按权利要求 1所述的大功率发光二极管，其特征在于， 所述的高热导率材质 的金属基为铜、铜合金或其它高热导率材质的金属基电路板的金属基； 所述金属基电 路板上有至少一个通孔或其周边有至少一个缺口， 发光二极管用螺丝或铆钉固定在外 加的散热器上； 所述铆钉为实芯或空芯的， 发光二极管的引出线从空芯铆钉中央穿过 引向发光二极管后方； 金属基电路板的形状为圆形、 方形、 矩形或^边形。  2. The high-power light-emitting diode according to claim 1, wherein the metal base of the high thermal conductivity material is a metal base of a copper, copper alloy, or other metal base circuit board of the high thermal conductivity material; the The metal base circuit board has at least one through hole or at least one notch around the light emitting diode, and the light emitting diode is fixed on the external heat sink with screws or rivets; the rivets are solid cores or hollow cores, and the lead wires of the light emitting diodes are empty. The center of the core rivet passes through to the rear of the light emitting diode; the shape of the metal-based circuit board is round, square, rectangular, or square.
3、 按权利要求 2所述的大功率发光二极管，其特征在于， 所述的金属基电路板 上装有用于控制各发光二极管芯片发光的电子元件。  3. The high-power light-emitting diode according to claim 2, wherein the metal-based circuit board is provided with electronic components for controlling the light-emitting diode chips.
4、 按权利要求 1所述的大功率发光二极管,其特征在于， 所述金属基上的光反 射面或光反射碗为镀银面， 发光二极管芯片用高热导率胶或焊锡固定在金属基光反射 面或光反射碗上。  4. The high-power light emitting diode according to claim 1, wherein the light reflecting surface or the light reflecting bowl on the metal base is a silver-plated surface, and the light emitting diode chip is fixed on the metal base with a high thermal conductivity adhesive or solder. Light reflecting surface or light reflecting bowl.
5、 按权利要求 1所述的大功率发光二极管，其特征在于， 所述的至少一个发光 二极管芯片为至少一个发蓝光或紫外光的发光二极管芯片；所述的发光粉层为至少一 层、 每层至少有发一种光色的发光粉层， 所述发光粉层的发光粉中含有透光介质。  5. The high-power light-emitting diode according to claim 1, wherein the at least one light-emitting diode chip is at least one light-emitting diode chip that emits blue or ultraviolet light; the light-emitting powder layer is at least one layer, Each layer has at least one light-emitting luminescent powder layer, and the luminescent powder of the luminescent powder layer contains a light-transmitting medium.
6、 按权利要求 5所述的大功率发光二极管，其特征在于， 所述的发光粉层还包括 有保护层。  6. The high-power light-emitting diode according to claim 5, wherein the luminescent powder layer further comprises a protective layer.
7、 按权利要求 1所述的大功率发光二极管,其特征在于， 所述的透光介质层为 耐温、 抗紫外硅胶、 环氧树脂或塑料介质层； 其中也含有光散射剂层。  7. The high-power light-emitting diode according to claim 1, wherein the light-transmitting medium layer is a temperature-resistant, ultraviolet-resistant silica gel, an epoxy resin, or a plastic medium layer; further comprising a light-scattering agent layer.
8、 按权利要求 1所述的大功率发光二极管，其特征在于， 所述的透光盖或透光 泡壳由玻璃或塑料制成， 为透明或漫射的， 其形状为圆形、 方形或其它几何形状， 其 光出射面的形状为球面、 曲面或平面； 它被用胶或固定框固定在金属基上。  8. The high-power light-emitting diode according to claim 1, wherein the light-transmitting cover or light-transmitting blister is made of glass or plastic, is transparent or diffuse, and has a circular or square shape. Or other geometric shapes, the shape of the light exit surface is spherical, curved or flat; it is fixed on the metal base with glue or a fixed frame.
9、 按权利要求 8所述的大功率发光二极管，其特征在于， 所述的透光盖或透光 泡壳上还进一步设有小透镜或小棱镜光学结构。  9. The high-power light-emitting diode according to claim 8, wherein a small lens or a small prism optical structure is further provided on the transparent cover or the transparent light bulb.
10、 一种大功率发光二极管， 包括： 至少一组发红、 蓝、 绿或加黄的发光二极 管芯片， 一个高热导率材质的金属基， 所述发光二极管芯片光出射方的透光盖或透光 泡壳的内表面上有光散射层； 或者透光盖本身为光散射透光盖； 透光泡壳本身为光散 射透光泡壳； 透光盖或透光泡壳将各发光色混色， 得到不同色温、 色温可变、 高显指 数色的白光或其它色光、 可变色光的发光二极管。 10. A high-power light-emitting diode, comprising: at least a group of light-emitting diode chips emitting red, blue, green, or yellow, a metal base of a high thermal conductivity material, a light-transmitting cover on the light emitting side of the light-emitting diode chip, or There is a light-scattering layer on the inner surface of the light-transmitting bubble shell; or the light-transmitting cover itself is a light-scattering light-transmitting cover; the light-transmitting bubble itself is a light-scattering light-transmitting bubble shell; Mixing colors to get different color temperatures, variable color temperature, and high display index Several colored white or other colored light, variable color light emitting diodes.
11、 一种大功率发光二极管， 包括： 至少一个发光二极管芯片， 一个高热导率 材质的金属基， 所述发光二极管芯片的 p-n结上的光反射金属电极经高热导率胶直接 粘贴于金属基上， 所述高热导率胶为细金刚石粉胶或氧化物导热胶； 金属基上的发光 二极管芯片电极焊接处有绝缘层和导电层，发光二极管芯片的电极经导电粘结剂由导 电层引出； 导电粘结剂为混有银珠、 金珠或铜珠的焊锡或导电胶。  11. A high-power light-emitting diode, comprising: at least one light-emitting diode chip, a metal substrate of high thermal conductivity material, and a light-reflecting metal electrode on a pn junction of the light-emitting diode chip is directly adhered to the metal substrate through a high thermal conductivity adhesive. The high thermal conductivity adhesive is a fine diamond powder adhesive or an oxide thermal conductive adhesive; a light-emitting diode chip electrode on a metal base is provided with an insulating layer and a conductive layer, and the electrodes of the light-emitting diode chip are led out of the conductive layer through a conductive adhesive. ; The conductive adhesive is solder or conductive glue mixed with silver, gold, or copper beads.
12、 一种大功率发光二极管， 包括： 至少一个发蓝光的发光二极管芯片和至少 一种、 每种至少一个发其它有色可见光的发光二极管芯片， 一个高热导率材质的金属 基， 所述发光二极管芯片的光出射面上有透光介质层， 透光介质层上方有透光盖或透 光泡壳， 透光盖或透光泡壳的内表面上有发光粉层， 透光介质层和发光粉层之间为空 气隙或充填第二透光物质。  12. A high-power light-emitting diode, comprising: at least one light-emitting diode chip that emits blue light and at least one, each at least one light-emitting diode chip that emits other colored visible light, a metal substrate with a high thermal conductivity material, and the light-emitting diode The light emitting surface of the chip has a light-transmitting medium layer, a light-transmitting cover or a light-transparent bubble shell above the light-transmitting medium layer, a light-emitting powder layer on the inner surface of the light-transmitting lid or light-transmitting bubble shell, a light-transmitting medium layer and light emitting An air gap or a second light-transmitting substance is filled between the powder layers.
13、 一种大功率发光二极管灯， 包括： 至少一个大功率发光二极管， 一个散热装 置， 一个驱动器及其外壳， 一个电连接装置； 所述电连接装置为普通钨丝灯、 或节能 灯的螺旋型、 插口型灯头和 /或插头； 所述发光二极管被紧密固定在散热装置上， 二 者之间有高热导率胶层； 所述散热装置为带有散热片的散热器， 驱动器的输入经引线 和电连接装置与外电源相连， 它的输出经引线与发光二极管相连， 用于点亮发光二极 管， 所述发光二极管和电连接装置连接处也可设有高热导率材质的铜板。  13. A high-power light-emitting diode lamp, comprising: at least one high-power light-emitting diode, a heat sink, a driver and its casing, and an electrical connection device; the electrical connection device is an ordinary tungsten filament lamp or a spiral of an energy-saving lamp. Type, socket-type lamp cap and / or plug; the light emitting diode is tightly fixed on the heat sink with a high thermal conductivity adhesive layer therebetween; the heat sink is a heat sink with a heat sink, and the input of the driver is The lead and the electrical connection device are connected to an external power source, and its output is connected to the light-emitting diode via a lead for lighting the light-emitting diode. A copper plate of high thermal conductivity material may also be provided at the connection between the light-emitting diode and the electrical connection device.
14、 按权利要求 13所述的大功率发光二极管灯， 其特征在于， 所述的大功率发 光二极管包括： 至少一个发光二极管芯片， 一个高热导率材质的金属基， 发光二极管 芯片被安装在金属基上的光反射面或光反射碗上， 所述发光二极管芯片的 p-n结朝向 所述金属基安装， 或发光二极管芯片的基板朝向所述金属基安装； 发光二极管芯片的 电极经引线或与金属基绝缘的导电体引出； 发光二极管芯片的光出射面上有透光介质 层，透光介质层上方有透光盖或透光泡壳，透光盖或透光泡壳的内表面上有发光粉层， 透光介质层和发光粉层之间为空气隙或充填第二透光物质。  14. The high-power light-emitting diode lamp according to claim 13, wherein the high-power light-emitting diode comprises: at least one light-emitting diode chip, a metal base of a high thermal conductivity material, and the light-emitting diode chip is mounted on a metal On a light reflecting surface or a light reflecting bowl on the substrate, the pn junction of the light emitting diode chip is installed toward the metal base, or the substrate of the light emitting diode chip is installed toward the metal base; the electrode of the light emitting diode chip is connected with a lead or a metal The base-conducting conductive body is led out; the light emitting surface of the light-emitting diode chip is provided with a light-transmitting medium layer, a light-transmitting cover or a light-transmitting shell is arranged above the light-transmitting medium layer, and light is emitted on the inner surface of the light-transmitting cover or light-transmitting bubble shell An air gap or a second light-transmitting substance is filled between the powder layer, the light-transmitting medium layer and the light-emitting powder layer.
15、 按权利要求 13所述的大功率发光二极管灯， 其特征在于， 所述的大功率 发光二极管包括： 至少一组发红、 蓝、 绿或加黄的发光二极管芯片， 一个高热导率材 质的金属基， 所述发光二极管芯片光出射方的透光盖或透光泡壳的内表面上有光散射 层; 或者透光盖本身为光散射透光盖； 透光泡壳本身为光散射透光泡壳； 透光盖或透 光泡壳将各发光色混色， 得到不同色温、 色温可变、 高显指数色的白光或其它色光、 可变色光的发光二极管。  15. The high-power light-emitting diode lamp according to claim 13, wherein the high-power light-emitting diode comprises: at least one group of light-emitting diode chips emitting red, blue, green, or yellow, and a high thermal conductivity material A metal base, the light-emitting side of the light-emitting diode chip has a light-scattering layer on the inner surface of the light-transmitting cover or the light-transmitting bubble shell; or the light-transmitting cover itself is a light-scattering light-transmitting cover; the light-transmitting bubble itself is light-scattering Light-transmitting blister; the light-transmitting cover or light-transmitting blister mixes each light-emitting color to obtain light-emitting diodes with different color temperature, variable color temperature, high display index color of white light or other color light, and variable color light.
16、 按权利要求 13所述的大功率发光二极管灯， 其特征在于， 所述的大功率 发光二极管包括： 至少一个发光二极管芯片， 一个高热导率材质的金属基， 所述发光 二极管芯片的 p-n结上的光反射金属电极经高热导率胶直接粘贴于金属基上， 所述高 热导率胶为细金刚石粉胶或氧化物导热胶；金属基上的发光二极管芯片电极焊接处有 绝缘层和导电层， 发光二极管芯片的电极经导电粘结剂由导电层引出； 导电粘结剂为 混有银珠、 金珠或铜珠的悍锡或导电胶。 16. The high-power light-emitting diode lamp according to claim 13, wherein the high-power light-emitting diode comprises: at least one light-emitting diode chip, a metal substrate with a high thermal conductivity material, and pn of the light-emitting diode chip. The light-reflecting metal electrode on the junction is directly adhered to the metal substrate through a high thermal conductivity adhesive, wherein the high thermal conductivity adhesive is a fine diamond powder adhesive or an oxide thermal conductive adhesive; an insulation layer and The conductive layer, the electrodes of the LED chip are led out from the conductive layer through the conductive adhesive; the conductive adhesive is Titanium or conductive glue mixed with silver, gold or copper beads.
17、 按权利要求 13所述的大功率发光二极管灯， 其特征在于， 所述的大功率 发光二极管包括： 至少一个发蓝光的发光二极管芯片和至少一种、 每种至少一个发其 它有色可见光的发光二极管芯片，一个高热导率材质的金属基， 所述发光二极管芯片 的光出射面上有透光介质层， 透光介质层上方有透光盖或透光泡壳， 透光盖或透光泡 壳的内表面上有发光粉层， 透光介质层和发光粉层之间为空气隙或充填第二透光物 质。  17. The high-power light-emitting diode lamp according to claim 13, wherein the high-power light-emitting diode comprises: at least one blue light-emitting light-emitting diode chip and at least one, each at least one of which emits other colored visible light. A light-emitting diode chip, a metal substrate with a high thermal conductivity material, a light-emitting surface of the light-emitting diode chip has a light-transmitting medium layer, and a light-transmitting cover or a light-transparent bubble shell, A light emitting powder layer is provided on the inner surface of the bubble shell, and an air gap or a second light transmitting substance is filled between the light transmitting medium layer and the light emitting powder layer.
18、 按权利要求 14、 15、 16或 17所述的大功率发光二极管灯， 其特征在于， 还 包括至少一个小电扇， 安装在所述散热装置内， 驱动器经引线驱动所述小电扇。  18. The high-power light-emitting diode lamp according to claim 14, 15, 16 or 17, further comprising at least one small electric fan installed in the heat sink, and a driver drives the small electric fan through a lead.
PCT/CN2004/001353 2003-11-25 2004-11-25 Light emitting diode and light emitting diode lamp WO2005067064A1 (en)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
CN200310113782.1 2003-11-25
CNB2003101137821A CN100375300C (en) 2003-11-25 2003-11-25 High power LED
CNU2004200028386U CN2677742Y (en) 2004-01-13 2004-01-13 Large power light-emitting diode
CN200420002838.6 2004-01-13
CN200420004811.0 2004-02-12
CNU2004200048110U CN2674654Y (en) 2004-02-12 2004-02-12 Bare chip LED
CN200420022952.5 2004-05-18
CNU2004200229525U CN2696133Y (en) 2004-05-18 2004-05-18 Power type light-emitting diod
CNU2004200513108U CN2696134Y (en) 2004-05-24 2004-05-24 Color temp adjustable white-light LED
CN200420051310.8 2004-05-24
CNU2004200867901U CN2713647Y (en) 2004-07-27 2004-07-27 Power type white light LED
CN200420086790.1 2004-07-27
CN200420009547.7 2004-10-07
CNU200420009547XU CN2784927Y (en) 2004-10-11 2004-10-11 Electrophoresis tank for isoelectric point measurement

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