CN2713647Y - Power type white light LED - Google Patents
Power type white light LED Download PDFInfo
- Publication number
- CN2713647Y CN2713647Y CNU2004200867901U CN200420086790U CN2713647Y CN 2713647 Y CN2713647 Y CN 2713647Y CN U2004200867901 U CNU2004200867901 U CN U2004200867901U CN 200420086790 U CN200420086790 U CN 200420086790U CN 2713647 Y CN2713647 Y CN 2713647Y
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- CN
- China
- Prior art keywords
- light
- emitting diode
- power type
- backlight unit
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The utility model relates to a power type white light LED which comprises at least one LED chip and a metal base with high heat conductivity, such as metal base circuit boards, wherein, the LED chip is positively or reversely on the metal base, an electrode of the LED chip is led out through a leading wire and an electric conducting body isolated with the metal base, and a light-admitting medium layer in which light scattering powders are filled is arranged on the light emergence face of the LED chip. A light-admitting cover is arranged on the light-admitting medium layer, and a light emitting powder layer is arranged on the inner surface of the light-admitting cover. The light emitting powder layer has the advantages of simple coating process of light emitting powders, uniformity and favorable consistency, large area, low temperature, high light emitting efficiency and small light decay and is not directly contacted with the LED chip. The LED has the advantages of long service life, simple manufacturing technique and suitability for mass production and can be used for illuminating lamps, decorative lamps, solar energy lamps, miner lamps, table lamps, bed lamps, vehicle and ship lamps, display lamps, etc.
Description
Technical field
The utility model relates to a kind of high-power power type white light light-emitting diode, is used for illumination, decorative lamp, Solar lamp, mine lamp, bright lamp engineering and demonstration etc.
Background technology
The white light power type light-emitting diode of prior art usually earlier the light-emitting diode chip for backlight unit upside-down mounting of blue light-emitting or ultraviolet light on the silicon chip, be contained on the metab then; On around chip light-emitting face and its luminescent powder is arranged, it can absorb blue light and send gold-tinted, produces white light with the blue light colour mixture again, or absorbs ultraviolet light and send white light.At present, because the electric energy of input light-emitting diode is had an appointment and 80% will be transformed into heat energy, its heat is mainly from the p-n junction of light-emitting diode chip for backlight unit, temperature is very high around the chip, luminous bisque just in time just is in here, the luminescent powder aspect is long-pending little, and its unit are bearing power is more than 2000 times of conventional fluorescent lamps, and its surface brightness is up to 6,000,000 cd/m
2More than, so high surface brightness can be unfavorable for human eye, high temperature will cause the luminous efficiency of luminescent powder to descend, light decay is accelerated, the lost of life of light-emitting diode; This is a big obstacle of making long-life high power white light power type light-emitting diode at present.
Secondly, poor, the complex process of the coating uniformity of the luminescent powder of white light power type light-emitting diode, consistency are poor at present, and this is an another problem of making the high power white light power type light-emitting diode at present.
In addition, at present the manufacturing process complexity of white light power type light-emitting diode, be difficult to produce in enormous quantities, the cost height.
Summary of the invention
The purpose of this utility model is to overcome the deficiency of above-mentioned existence, provide a kind of simple in structure, thermal resistance is low, simple, the luminous bisque of the coating process of luminescent powder evenly, high conformity, luminous bisque temperature is low, the life-span is long, luminous efficiency is high, the light-emitting diode manufacturing process simple, be suitable for producing in batches, cost is low and powerful power type white light light-emitting diode.
The purpose of this utility model is achieved in that it includes at least one light-emitting diode chip for backlight unit, a high heat conductivity metal base, light-emitting diode chip for backlight unit is installed on the Metal Substrate, electrode of light emitting diode is drawn through lead-in wire with the conductor of Metal Substrate insulation, the light transmission medium layer is arranged on the light-emitting face of described light-emitting diode chip for backlight unit, one euphotic cover is arranged on the light transmission medium layer, luminous bisque is arranged on the inner surface of euphotic cover; The luminescent powder aspect long-pending big and also with light-emitting diode chip for backlight unit directly knot touch, luminous bisque temperature is low, luminous efficiency height, light decay are little, the long working life of light-emitting diode.
Described high heat conductivity metal base is as the metal-base circuit plate of aluminium base or copper base circuit board, and insulating barrier and conductive layer are arranged on it; There is at least one to be used for that screw hole or its periphery that the effective screw of light-emitting diodes or rivet are fixed on the radiator that adds are had at least one breach on the described metal-base circuit plate.
Described high heat conductivity metal base is the high heat conductivity metal base that has at least one screw and made by copper, copper alloy, aluminium; Having at least one on the described Metal Substrate is used for the effective screw of light-emitting diodes or rivet more closely are fixed on screw hole on the radiator that adds.
Described rivet can be real core or hollow, and lead-out wire can pass from hollow rivet central authorities and guide the light-emitting diode rear into; Also has electronic component on the metal-base circuit plate.
Described light transmission medium layer is that at least a material in silica gel, epoxy resin or the plastics is formed, and wherein also has the light scattering powder.
Euphotic cover on the described light transmission medium layer is made by glass or plastics, for transparent or diffusion, its shape can be circle, square or other shape, its light-emitting face be shaped as curved surface or plane, optical textures such as the little prism of a series of lenslets also can be arranged on it, it is fixed on the Metal Substrate with glue, and described fixing glue can be identical with the light transmission medium layer.
The air-gap or the second light transmission medium layer are arranged between the luminous bisque on described light transmission medium layer and the euphotic cover; Described luminous bisque is one deck, every layer of luminous bisque that has a kind of illuminant colour at least at least.
The lead-out wire of described light-emitting diode chip for backlight unit be on the metal-base circuit plate conductive layer or with the sheet metal or the metal wire of Metal Substrate insulation; One in the lead-out wire of described light-emitting diode also can be Metal Substrate.
Described at least one light-emitting diode chip for backlight unit is the light-emitting diode chip for backlight unit of at least one blue light-emitting or ultraviolet light, it by formal dress or upside-down mounting in Metal Substrate.
Light-emitting diode chip for backlight unit that described at least one light-emitting diode chip for backlight unit is at least one blue light-emitting or ultraviolet light and light-emitting diode chip for backlight unit at least a, every kind of at least one other look visible light, the latter is used to regulate the colour temperature and the color rendering index of light-emitting diode emergent light.
Power type white light light-emitting diode of the present utility model is compared with the prior art power type light-emitting diode, have simple, the luminous bisque of coating process simple in structure, luminescent powder evenly, low, the long working life of high conformity, luminous bisque temperature, luminous efficiency height, light-emitting diode manufacturing process be simple, be suitable for producing in batches, low cost and other advantages.
Description of drawings
Fig. 1 is the theory structure schematic diagram of an embodiment of power type light-emitting diode of the present utility model.
Fig. 2 is the theory structure schematic diagram of another embodiment of power type light-emitting diode of the present utility model.
Fig. 3 is the theory structure schematic diagram of another embodiment of power type light-emitting diode of the present utility model.
Fig. 4 is the theory structure schematic diagram of another embodiment of power type light-emitting diode of the present utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is described in detail: Fig. 1 is the theory structure schematic diagram of an embodiment of power type light-emitting diode of the present utility model.It includes at least one light-emitting diode chip for backlight unit 1, the circuit board 2 of at least one Metal Substrate, the Metal Substrate 3 of circuit board 2 is high heat conductance plates such as copper or aluminium, insulating barrier 4 and conductive layer 5 are arranged on the Metal Substrate, the place does not have insulating barrier 4 and conductive layer 5 at the installation chip, be a light reflection surface or reflection bowl 6 (Figure 1 shows that the example of reflection bowl), light-emitting diode chip for backlight unit 1 is fixed on the Metal Substrate 3 with high heat conductance glue 7, electrode of light emitting diode 8 links to each other with conductive layer 5 through going between, conductive layer 5 is used to link external power simultaneously, connects external power and can light light-emitting diode; Light transmission medium layer 9 is arranged on the light-emitting face of light-emitting diode chip for backlight unit 1, an euphotic cover 10 is arranged on the light transmission medium layer, luminous bisque 11 is arranged on the inner surface of euphotic cover 10; Described at least one light-emitting diode chip for backlight unit 1 is the light-emitting diode chip for backlight unit of at least one blue light-emitting or ultraviolet light; Described luminous bisque 11 is one deck, every layer of luminous bisque that has a kind of illuminant colour at least at least, and they can absorb that blue light that chip produces sends gold-tinted and produce white light or absorb the ultraviolet light that chip produced with blue light and produce white light; Described light transmission medium layer 9 is heatproof, uvioresistant dielectric layer, for example is silica gel, epoxy resin or plastics etc.; Wherein also can contain adularescent or transparent light scattering powder 12, for example metal oxide powder, silver powder etc. such as titanium dioxide, aluminium oxide, magnesium oxide; Described euphotic cover 10 is made by glass or plastics, for transparent or diffusion, its shape can be circular or square, the shape of its light-emitting face can be sphere, curved surface or plane, optical textures such as the little prism of a series of lenslets also can be arranged on it, it is fixed on the Metal Substrate 2 with glue 13, and described fixing glue 13 can be identical with light transmission medium layer 9.
Fig. 2 is the theory structure schematic diagram of another embodiment of power type light-emitting diode of the present utility model.It is characterized in that described euphotic cover 10 is curved surface; There are at least one screw hole 15 or its periphery that at least one breach is arranged on the metal-base circuit plate 2, be used for effective screw 21 of light-emitting diodes or rivet 22 are fixed on the radiator 20 that adds, when using rivet, rivet can be real core or hollow, and lead-out wire 23 can pass from hollow rivet central authorities and guide the light-emitting diode rear into; Between metal-base circuit plate 2 and the radiator 20 heat-conducting glue 24 is arranged.Identical among Fig. 2 among the represented meaning of other numeral and Fig. 1.
Fig. 3 is the theory structure schematic diagram of another embodiment of power type light-emitting diode of the present utility model.It is characterized in that described high heat conductivity metal base 3 is for having the high heat conductivity metal base of at least one screw 16, make by copper, copper alloy, aluminium etc., described Metal Substrate 3 also can have at least one screw hole simultaneously, is used for effective screw of light-emitting diodes or rivet etc. more closely are fixed on the radiator that adds; The air-gap or the second light transmission medium layer 14 are arranged between described light transmission medium layer 9 and the luminous bisque 11; The lead-out wire of described light-emitting diode is and the sheet metal 17 or the metal wire of Metal Substrate 3 insulation that one in the lead-out wire of described light-emitting diode also can be Metal Substrate 3.Identical among Fig. 3 among the represented meaning of other numeral and Fig. 1.
Fig. 4 is the theory structure schematic diagram of another embodiment of power type light-emitting diode of the present utility model.Described at least one light-emitting diode chip for backlight unit 1 on Metal Substrate 3, is had high heat conductance glue 18 between chip 1 and the Metal Substrate 3 by upside-down mounting, electric conducting material 19, for example scolding tin is arranged between the electrode of chip 1 and the circuit board, interconnect; Also electronic component 25 can be arranged on the described circuit board, light-emitting diode chip for backlight unit 1a that described at least one light-emitting diode chip for backlight unit 1 is at least one blue light-emitting or ultraviolet light and at least a illuminant colour, every kind of at least one light-emitting diode chip for backlight unit 1b that sends out other look visible light, the latter is used to regulate the colour temperature of light-emitting diode emergent light and color rendering index etc., because the distance between light-emitting diode and the illuminated thing is greater than inter-chip pitch, and do not have image device on the light-emitting diode chip for backlight unit, thereby emergent light can fine colour mixture.Identical among Fig. 4 among the represented meaning of other numeral and Fig. 1.
The related know-how of power type light-emitting diode that the utility model is introduced is that the general personnel of this specialty are familiar with, and therefore as long as understand content of the present invention, can do various forms of variations and replacement.
Claims (10)
1, a kind of power type white light light-emitting diode, it includes at least one light-emitting diode chip for backlight unit, a high heat conductivity metal base, light-emitting diode chip for backlight unit is installed on the Metal Substrate, electrode of light emitting diode is drawn through lead-in wire with the conductor of Metal Substrate insulation, it is characterized in that on the light-emitting face of described light-emitting diode chip for backlight unit (1) light transmission medium layer (9) being arranged, an euphotic cover (10) is arranged on the light transmission medium layer, luminous bisque (11) is arranged on the inner surface of euphotic cover.
2, power type white light light-emitting diode according to claim 1 is characterized in that described high heat conductivity metal base (3) for the metal-base circuit plate (2) as aluminium base or copper base circuit board, has insulating barrier (4) and conductive layer (5) on it; There is at least one to be used for that screw hole (15) or its periphery that the effective screw of light-emitting diodes (21) or rivet (22) are fixed on the radiator (20) that adds are had at least one breach on the described metal-base circuit plate (2).
3, power type white light light-emitting diode according to claim 1 is characterized in that the high heat conductivity metal base of described high heat conductivity metal base (3) for having at least one screw (16) and being made by copper, copper alloy, aluminium; Having at least one on the described Metal Substrate (3) is used for the effective screw of light-emitting diodes (21) or rivet (22) more closely are fixed on screw hole (15) on the radiator (20) that adds.
4, according to claim 2 or 3 described power type white light light-emitting diodes, it is characterized in that described rivet (22) can be real core or hollow, lead-out wire (23) can pass from hollow rivet central authorities and guide the light-emitting diode rear into; Metal-base circuit plate (2) is gone up also has electronic component (25).
5, power type white light light-emitting diode according to claim 1 is characterized in that described light transmission medium layer (9) at least a material composition in silica gel, epoxy resin or the plastics, wherein also has light scattering powder (12).
6, power type white light light-emitting diode according to claim 1 or 5, it is characterized in that the euphotic cover (10) on the described light transmission medium layer made by glass or plastics, for transparent or diffusion, its shape can be circle, square or other shape, its light-emitting face be shaped as curved surface or plane, optical textures such as the little prism of a series of lenslets also can be arranged on it, and it is fixed on glue (13) on the Metal Substrate (2,3), and described fixing glue (13) can be identical with light transmission medium layer (9).
7, power type white light light-emitting diode according to claim 1 or 5 is characterized in that the air-gap or the second light transmission medium layer (14) are arranged between the luminous bisque (11) on described light transmission medium layer (9) and the euphotic cover; Described luminous bisque (11) is one deck, every layer of luminous bisque that has a kind of illuminant colour at least at least.
8, power type white light light-emitting diode according to claim 1, the lead-out wire that it is characterized in that described light-emitting diode chip for backlight unit be on the metal-base circuit plate conductive layer (5) or with the sheet metal (17) or the metal wire of Metal Substrate (3) insulation; One in the lead-out wire of described light-emitting diode also can be Metal Substrate (3).
9, according to claim 1 or 8 described power type white light light-emitting diodes, it is characterized in that the light-emitting diode chip for backlight unit of described at least one light-emitting diode chip for backlight unit (1) at least one blue light-emitting or ultraviolet light, it by formal dress or upside-down mounting in Metal Substrate (3).
10, according to claim 1 or 8 described power type white light light-emitting diodes, it is characterized in that light-emitting diode chip for backlight unit (1a) and the light-emitting diode chip for backlight unit (1b) at least a, every kind at least one other look visible light of described at least one light-emitting diode chip for backlight unit at least one blue light-emitting or ultraviolet light, the latter is used to regulate the colour temperature and the color rendering index of light-emitting diode emergent light.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2004200867901U CN2713647Y (en) | 2004-07-27 | 2004-07-27 | Power type white light LED |
| PCT/CN2004/001353 WO2005067064A1 (en) | 2003-11-25 | 2004-11-25 | Light emitting diode and light emitting diode lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2004200867901U CN2713647Y (en) | 2004-07-27 | 2004-07-27 | Power type white light LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2713647Y true CN2713647Y (en) | 2005-07-27 |
Family
ID=34874935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2004200867901U Expired - Fee Related CN2713647Y (en) | 2003-11-25 | 2004-07-27 | Power type white light LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2713647Y (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008116352A1 (en) * | 2007-03-26 | 2008-10-02 | He Shan Lide Electronic Enterprise Company Ltd. | A method of producing a white light led lamp and the led lamp obtained using the same |
| CN102255035A (en) * | 2011-08-16 | 2011-11-23 | 易美芯光（北京）科技有限公司 | Multi-LED chip packaging structure on substrate |
| CN102280558A (en) * | 2011-05-13 | 2011-12-14 | 北京德上科技有限公司 | Structure of electrode of enamel electroluminescent element |
| CN102714924A (en) * | 2010-01-27 | 2012-10-03 | 日本发条株式会社 | Method of manufacturing circuit board with metal base, and circuit board with metal base |
| WO2013078728A1 (en) * | 2011-12-01 | 2013-06-06 | 深圳市华星光电技术有限公司 | Led light strip and backlight module of liquid crystal display device |
| CN105371170A (en) * | 2015-11-23 | 2016-03-02 | 安徽恒利机电科技有限公司 | Assembly technique for LED mining lamp base |
| WO2017035984A1 (en) * | 2015-09-06 | 2017-03-09 | 深圳前海零距物联网科技有限公司 | New luminous helmet and manufacturing method therefor |
-
2004
- 2004-07-27 CN CNU2004200867901U patent/CN2713647Y/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008116352A1 (en) * | 2007-03-26 | 2008-10-02 | He Shan Lide Electronic Enterprise Company Ltd. | A method of producing a white light led lamp and the led lamp obtained using the same |
| CN102714924A (en) * | 2010-01-27 | 2012-10-03 | 日本发条株式会社 | Method of manufacturing circuit board with metal base, and circuit board with metal base |
| CN102714924B (en) * | 2010-01-27 | 2015-03-11 | 日本发条株式会社 | Method of manufacturing circuit board with metal base, and circuit board with metal base |
| CN102280558A (en) * | 2011-05-13 | 2011-12-14 | 北京德上科技有限公司 | Structure of electrode of enamel electroluminescent element |
| CN102280558B (en) * | 2011-05-13 | 2014-05-14 | 严为民 | Structure of electrode of enamel electroluminescent element |
| CN102255035A (en) * | 2011-08-16 | 2011-11-23 | 易美芯光（北京）科技有限公司 | Multi-LED chip packaging structure on substrate |
| CN102255035B (en) * | 2011-08-16 | 2014-04-16 | 易美芯光（北京）科技有限公司 | Multi-LED chip packaging structure on substrate |
| WO2013078728A1 (en) * | 2011-12-01 | 2013-06-06 | 深圳市华星光电技术有限公司 | Led light strip and backlight module of liquid crystal display device |
| WO2017035984A1 (en) * | 2015-09-06 | 2017-03-09 | 深圳前海零距物联网科技有限公司 | New luminous helmet and manufacturing method therefor |
| DE112015006781B4 (en) | 2015-09-06 | 2022-11-17 | Shenzhen Qianhai Livall Iot Technology Co., Ltd. | Novel luminous helmet and method for producing the same |
| CN105371170A (en) * | 2015-11-23 | 2016-03-02 | 安徽恒利机电科技有限公司 | Assembly technique for LED mining lamp base |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: HANGZHOU TELIANG TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: GE SHICHAO Effective date: 20070622 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20070622 Address after: Hangzhou City, Zhejiang province 310012 Wensan Road No. 628, room 218 Patentee after: Hangzhou Teliang Technology Co., Ltd. Address before: Two road 310012 Zhejiang city in Hangzhou Province, the Qiuzhi Lane room 2-203 Patentee before: Ge Shichao |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050727 Termination date: 20120727 |