CN2544416Y - Large power LCD - Google Patents

Large power LCD Download PDF

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Publication number
CN2544416Y
CN2544416Y CN02233633U CN02233633U CN2544416Y CN 2544416 Y CN2544416 Y CN 2544416Y CN 02233633 U CN02233633 U CN 02233633U CN 02233633 U CN02233633 U CN 02233633U CN 2544416 Y CN2544416 Y CN 2544416Y
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CN
China
Prior art keywords
light
emitting diode
emitting diodes
power
backlight unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN02233633U
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Chinese (zh)
Inventor
葛世潮
黄晞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Manelux Lighting Co Ltd
Original Assignee
葛世潮
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to CN02233633U priority Critical patent/CN2544416Y/en
Application granted granted Critical
Publication of CN2544416Y publication Critical patent/CN2544416Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to a high power light-emitting diode, comprising at least one LED chip which is installed on the light reflex surface of a ground mass with high heat conductivity. The ground mass is provided with at least one screw or one screw hole which is used for compactly thermo contacting with a heat radiation device. An insulating barrier and an insulating device used for connecting an outlet line are arranged on the ground mass. Therefore, a light emitting diode and lamp with high power and high efficiency can be made for illuminating, traffic lamps, automotive lamps, airplane reading light, reflector lamps, information display, etc. Compared with the prior art, the utility model has the characteristics of high horsepower, high efficiency, long lifetime, etc.

Description

Large-power light-emitting diodes
Technical field
The utility model relates to a kind of large-power light-emitting diodes, be used for illumination, traffic lights, auto lamp, aircraft reading lamp, shot-light and information demonstration etc.
Background technology
At present, light-emitting diode has been widely used in display, indicator light etc.It includes the chip of light-emitting diode, is installed in the reverberation bowl at a metal lead-out wire top, and another lead-out wire of light-emitting diode links to each other with light-emitting diode chip for backlight unit by metal lead wire, and light transmission medium, for example epoxy resin are arranged around the chip.When adding suitable voltage between the lead-out wire, light-emitting diode chip for backlight unit is promptly luminous.The light that sends by light-emitting diode chip for backlight unit, a part can be directly or via reverberation bowl from the outgoing of light transmission medium top, this part is useful light; But will be escaped from the side of light-emitting diode by another part light that light-emitting diode chip for backlight unit sends, some will produce total reflection and escape from the side or the bottom of light-emitting diode in light-emitting diode in addition.Simultaneously, be adiabatic light transmission medium around the existing light-emitting diode chip for backlight unit, and lead-out wire is a thin metal wire, or be installed on the printed circuit board (PCB), the heat that light-emitting diode chip for backlight unit produces is difficult to dissipate effectively, when input power raises, chip temperature raises easily, luminous efficiency is descended, and shorten useful life, thereby be difficult to make the efficient high power LED light lamp.
Summing up above existing in prior technology deficiency has: the one, and the light-emitting diode chip for backlight unit issued light can not be fully utilized, and the light that part is sent from chip can lose from the light-emitting diode side wall with because of the total reflection of the light of light-emitting diode inside; Particularly when using than large tracts of land or a plurality of light-emitting diode chip for backlight unit in order to make the high-power high-efficiency light-emitting diode, these losses are just even more serious; The 2nd, chip is installed in the little chaff, around this metallic object and the chip all is light transmission medium, epoxy resin for example, described light transmission medium is the non-conductor of heat, and the electrical power of input chip has 80% will be transformed into heat energy approximately, increase input power chip temperature is raise, straight line descends and the luminous efficiency of existing light-emitting diode chip for backlight unit is almost with the rising of temperature, thereby is difficult to make the high-power high-efficiency light-emitting diode.
Summary of the invention
The purpose of this utility model is to overcome the deficiency of above-mentioned existence, and a kind of light-emitting diode that can be made into high-power high-efficiency is provided.It comprises at least one light-emitting diode chip for backlight unit, it is characterized in that light-emitting diode chip for backlight unit is installed on the light reflection surface or reflection bowl of high heat conductivity metal matrix, electrode of light emitting diode is drawn through at least one lead-out wire or metallic matrix, is used to connect external power.
Seal and insulating barrier are arranged between described lead-out wire and the metallic matrix, seal is made of the circuit board of annular or other shape, its upper surface has the circuit conductive layer, and is leaded between circuit conductive layer and the electrode of light emitting diode, and lead-out wire is connected with the circuit conductive layer.
On the described circuit conductive layer electronic component can be installed.The lower surface of metallic matrix described in the utility model is provided with at least one screw or at least one screw hole, and directly contacts with a heat abstractor and to be connected.
The lower surface of described metallic matrix is provided with at least one screw or at least one screw hole, and interconnects with the heat conductive insulating layer or the heat-conductivity conducting layer of a heat abstractor by the centre.
Described heat abstractor be shaped as lampshade shape or other shape, its inner surface is shaped on one deck light reflection surface, outer surface can have radiator shutter.
One arrangements of electric connection is arranged on the described heat abstractor, be used for light-emitting diode is connected with external power.In described arrangements of electric connection, cough the drive circuit that light-emitting diode is housed.
Also can be provided with a metal substrate between described heat abstractor and the arrangements of electric connection, and heat abstractor is fixed on the metal substrate.
The light transmission medium of making just like epoxy resin or optical cement etc. around the light-emitting diode chip for backlight unit described in the utility model, the end face of light transmission medium is designed to plane, sphere, ellipsoid or other aspheric surface shape.Also the light-converting material that can absorb light that chip sends can be arranged on the described light-emitting diode chip for backlight unit.
The light reflecting device of light-emitting diode of the present utility model and heat abstractor, can improve the light utilization efficiency of existing light-emitting diode, good heat dissipation can make high power LED chip work under the high efficiency lower temperature, and the chip issued light can fully obtain utilizing.It is compared with the light-emitting diode of prior art, has advantages such as efficient height, power is big, the life-span is long.
Description of drawings
Fig. 1 is the structural representation of an embodiment of large-power light-emitting diodes of the present utility model.
Fig. 2 is the structural representation of another embodiment of large-power light-emitting diodes of the present utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model is described in detail.Figure 1 shows that the theory structure schematic diagram of an embodiment of large-power light-emitting diodes of the present utility model, it also can be a kind of large-power light-emitting diodes lamp.It includes 1, one heat abstractor 3 of at least one large-power light-emitting diodes, and described heat abstractor 3 can have 2, one arrangements of electric connections 4 of light reflection surface.
Described large-power light-emitting diodes 1 includes at least one light-emitting diode chip for backlight unit 5, and described chip 5 is installed on the light reflection surface or reflection bowl 7 of at least one high heat conductivity metal matrix 6, and described metallic matrix 6 contacts with heat abstractor 3 close thermal; The electrode of light-emitting diode chip for backlight unit 5 can go between 10 through at least one, at least one lead-out wire 11 or metallic matrix 6 are drawn, and is used to connect external power, to light light-emitting diode.Seal 12 and insulating barrier 13 are arranged between lead-out wire 11 and the metallic matrix 6, described seal 12 can be the circuit board of an annular or other shape, make by pottery, epoxy circuit board, semiconductor etc., its upper surface has circuit conductive layer 14, be used to connect lead-in wire 10 and lead-out wire 11 and be used for connection between a plurality of chips, semiconductor board also can be used for electronic component 15 is installed, if then also can have semiconductor circuit.
Described metallic matrix 6 is made by high heat conductivity metal, for example copper, silver, aluminium or alloy etc.Described metallic matrix 6 also has at least one screw 8 or at least one screw hole (not shown), is used for light-emitting diode is connected with heat abstractor 3.Described metallic matrix 6 can directly closely contact with heat abstractor 3, also heat conductive insulating layer or heat-conductivity conducting layer 9 can be arranged between the two.
Described heat abstractor 3 can have light reflection surface 2, have radiator shutter, and for the radiator of lampshade shape or other shape, by high thermal conductivity material, for example copper, silver, aluminium or alloy etc. are made; Described light reflection surface 2 is taper, cylinder, plane, parabola (shown among Fig. 2 23) etc., and light reflection surface is the high reflectance face, for example is silver, aluminium, alloy-layer or other high reflectance face.
Around the described chip 5 be light transmission medium 16, for example epoxy resin or optical cement etc., and it is transparent, painted or diffusion, its end face 17 can be designed to plane, sphere, ellipsoid or other aspheric surface by the requirement of exporting photo structure.
Described at least one light-emitting diode chip for backlight unit 4 can be identical illuminant colour or different colors, and they are parallel connection, series connection or connection in series-parallel on demand, thereby can obtain lamp not homochromy or changeable colour or display.
Also light-converting material 18 can be arranged on described at least one light-emitting diode chip for backlight unit 4, it can absorb chip 5 issued lights, and the light of required look is sent in for example blue light or ultraviolet ray, thereby can be made into the light-emitting diode of white light or other required coloured light.
Figure 2 shows that high-power high-efficiency light-emitting diode of the present utility model and make the theory structure schematic diagram of another embodiment of large-power light-emitting diodes lamp with it.It is characterized in that having among the described arrangements of electric connection 4a drive circuit 19 of light-emitting diode, the input of described drive circuit links to each other with electric connector 21 through at least one lead-in wire 20, be used to connect the external power and the signal of telecommunication, its output links to each other with light-emitting diode 1 through at least one lead-out wire 22,22a or at least one lead-out wire 23, be used to control the luminosity of light-emitting diode chip for backlight unit, can be used for regulating the brightness of lamp or obtain not homochromy light, the lamp of changeable colour, also can be used for display.
At least one lead-out wire of light-emitting diode also can directly be drawn from the circuit conductive layer 14 on the seal 12 of light-emitting diode, shown in Fig. 2 middle part 22,22a, the seal 12 of junction can have at least a portion bigger, the circuit conductive layer 14 of its upper surface can be used for connecting the lead-out wire 22a of light-emitting diode.
Heat abstractor 3 also can be fixed on another metallic plate 25, to increase radiating effect.
Each embodiment that the claimed scope of the utility model is not limited to introduce herein, the know-how that relates to is that the general personnel of this specialty are familiar with, and therefore as long as understand content of the present utility model, can do various forms of conversion and replacement.

Claims (10)

1, a kind of large-power light-emitting diodes, it comprises at least one light-emitting diode chip for backlight unit, it is characterized in that light-emitting diode chip for backlight unit (5) is installed on the light reflection surface or reflection bowl (7) of high heat conductivity metal matrix (6), the electrode of light-emitting diode chip for backlight unit (5) is drawn through at least one lead-out wire (11) or metallic matrix (6), and is connected with external power.
2, large-power light-emitting diodes as claimed in claim 1, it is characterized in that seal (12) and insulating barrier (13) are arranged between described lead-out wire (11) and the metallic matrix (6), seal (12) is made of the circuit board of annular or other shape, its upper surface has circuit conductive layer (14), between the electrode of circuit conductive layer (14) and light-emitting diode chip for backlight unit (5) leaded (10), lead-out wire (11) links with circuit conductive layer (14); Lead-out wire can be drawn (11) through metallic matrix (6), also can directly be drawn by circuit conductive layer (14) (22,22a).
3, large-power light-emitting diodes as claimed in claim 2 is characterized in that being equipped with on the described circuit conductive layer (14) electronic component (15).
4, large-power light-emitting diodes as claimed in claim 1 or 2, what it is characterized in that described metallic matrix (6) is provided with at least one screw (8) or at least one screw hole, be used for heat abstractor (3) directly contact be connected.
5, large-power light-emitting diodes as claimed in claim 1 or 2, what it is characterized in that described metallic matrix (6) is provided with at least one screw (8) or at least one screw hole, be used for being connected, heat conductive insulating layer or heat-conductivity conducting layer (9) are arranged between metallic matrix (6) and heat abstractor (3) with heat abstractor (3).
6, large-power light-emitting diodes as claimed in claim 1, what it is characterized in that described heat abstractor (3) is shaped as lampshade shape or other shape, and its inner surface can be shaped on one deck light reflection surface, and outer surface can have radiator shutter.
7, as claim 5 and 6 described large-power light-emitting diodes, it is characterized in that arrangements of electric connection (4) is arranged on the described heat abstractor (3), be used for large-power light-emitting diodes and be connected with external power; The interior dress of described arrangements of electric connection (4) also can have the drive circuit (17) of light-emitting diode.
8, large-power light-emitting diodes as claimed in claim 7 it is characterized in that also being provided with a metal substrate (25) between described heat abstractor (3) and the arrangements of electric connection (4), and heat abstractor is fixed on the metal substrate (25).
9, large-power light-emitting diodes as claimed in claim 1, it is characterized in that the light transmission medium of making just like epoxy resin or optical cement etc. (16) of described light-emitting diode chip for backlight unit (5) on every side, the end face of light transmission medium (17) is designed to plane, sphere, ellipsoid or other aspheric surface shape.
10,, it is characterized in that to absorb in addition on the described light-emitting diode chip for backlight unit (5) light-converting material (18) of light that chip sends as claim 1 or 9 described large-power light-emitting diodes
CN02233633U 2002-05-17 2002-05-17 Large power LCD Expired - Fee Related CN2544416Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN02233633U CN2544416Y (en) 2002-05-17 2002-05-17 Large power LCD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN02233633U CN2544416Y (en) 2002-05-17 2002-05-17 Large power LCD

Publications (1)

Publication Number Publication Date
CN2544416Y true CN2544416Y (en) 2003-04-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN02233633U Expired - Fee Related CN2544416Y (en) 2002-05-17 2002-05-17 Large power LCD

Country Status (1)

Country Link
CN (1) CN2544416Y (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100455879C (en) * 2005-08-09 2009-01-28 苏州金美家具有限公司 Lighting device
US7964886B2 (en) 2005-04-08 2011-06-21 Sharp Kabushiki Kaisha Light emitting diode
CN101252165B (en) * 2007-02-22 2012-05-09 夏普株式会社 Surface mounting type light emitting diode and method for manufacturing the same
US8421088B2 (en) 2007-02-22 2013-04-16 Sharp Kabushiki Kaisha Surface mounting type light emitting diode
CN101592302B (en) * 2008-05-28 2013-06-19 奥斯兰姆施尔凡尼亚公司 Real loading LED module for motor vehicle rear assembled lamp
US8604506B2 (en) 2007-02-22 2013-12-10 Sharp Kabushiki Kaisha Surface mounting type light emitting diode and method for manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7964886B2 (en) 2005-04-08 2011-06-21 Sharp Kabushiki Kaisha Light emitting diode
CN100455879C (en) * 2005-08-09 2009-01-28 苏州金美家具有限公司 Lighting device
CN101252165B (en) * 2007-02-22 2012-05-09 夏普株式会社 Surface mounting type light emitting diode and method for manufacturing the same
US8421088B2 (en) 2007-02-22 2013-04-16 Sharp Kabushiki Kaisha Surface mounting type light emitting diode
US8604506B2 (en) 2007-02-22 2013-12-10 Sharp Kabushiki Kaisha Surface mounting type light emitting diode and method for manufacturing the same
CN101592302B (en) * 2008-05-28 2013-06-19 奥斯兰姆施尔凡尼亚公司 Real loading LED module for motor vehicle rear assembled lamp

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: HANGZHOU FUYANG NOVELTY ELECTRONICS CO., LTD.

Free format text: FORMER OWNER: GE SHICHAO

Effective date: 20040213

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20040213

Address after: Hangzhou City, Zhejiang province 311404 Fuyang New Economic Development Zone building close to the full e

Patentee after: Hangzhou Fuyang Novel Electronics Co., Ltd.

Address before: Two road 310012 Zhejiang city in Hangzhou Province, the Qiuzhi Lane room 2-203

Patentee before: Ge Shichao

C56 Change in the name or address of the patentee

Owner name: ZHEJIANG MANELUX LIGHTING CO., LTD.

Free format text: FORMER NAME: HANGZHOU FUYANG XINYING ELECTRONICS CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: Hangzhou City, Zhejiang Province, Fuyang Economic Development Zone Building e Xindeng full collection, zip code: 311404

Patentee after: Zhejiang Manelux Lighting Co., Ltd.

Address before: Hangzhou City, Zhejiang Province, Fuyang Economic Development Zone Building e Xindeng full collection, zip code: 311404

Patentee before: Hangzhou Fuyang Novel Electronics Co., Ltd.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20030409

Termination date: 20110517