WO2005067064A1 - Del et lampe a del - Google Patents

Del et lampe a del Download PDF

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Publication number
WO2005067064A1
WO2005067064A1 PCT/CN2004/001353 CN2004001353W WO2005067064A1 WO 2005067064 A1 WO2005067064 A1 WO 2005067064A1 CN 2004001353 W CN2004001353 W CN 2004001353W WO 2005067064 A1 WO2005067064 A1 WO 2005067064A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting diode
transmitting
layer
emitting
Prior art date
Application number
PCT/CN2004/001353
Other languages
English (en)
Chinese (zh)
Inventor
Shichao Ge
Original Assignee
Shichao Ge
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CNB2003101137821A external-priority patent/CN100375300C/zh
Priority claimed from CNU2004200028386U external-priority patent/CN2677742Y/zh
Priority claimed from CNU2004200048110U external-priority patent/CN2674654Y/zh
Priority claimed from CNU2004200229525U external-priority patent/CN2696133Y/zh
Priority claimed from CNU2004200513108U external-priority patent/CN2696134Y/zh
Priority claimed from CNU2004200867901U external-priority patent/CN2713647Y/zh
Priority claimed from CNU200420009547XU external-priority patent/CN2784927Y/zh
Application filed by Shichao Ge filed Critical Shichao Ge
Publication of WO2005067064A1 publication Critical patent/WO2005067064A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F21V19/0015—Fastening arrangements intended to retain light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F21V23/001—Arrangement of electric circuit elements in or on lighting devices the elements being electrical wires or cables
    • F21V23/002—Arrangements of cables or conductors inside a lighting device, e.g. means for guiding along parts of the housing or in a pivoting arm
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/60—Cooling arrangements characterised by the use of a forced flow of gas, e.g. air
    • F21V29/67—Cooling arrangements characterised by the use of a forced flow of gas, e.g. air characterised by the arrangement of fans
    • F21V29/677—Cooling arrangements characterised by the use of a forced flow of gas, e.g. air characterised by the arrangement of fans the fans being used for discharging
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
    • F21V29/763—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • the invention relates to a light-emitting diode and a light-emitting diode lamp, particularly a high-power light-emitting diode and a light-emitting diode lamp with low thermal resistance, high color rendering index, variable color temperature, high efficiency, and long life, which are used for lighting and information display. Wait. Background technique
  • low-power light-emitting diodes have been widely used for signal indication, large-screen display, and the like. It has the advantages of long life, good color, firmness, etc. At the same time, high-power light-emitting diodes have also been gradually used for special lighting.
  • the light-emitting efficiency of the existing light-emitting diodes is still not high. About 80% of the input electric power will be converted into heat. This heat mainly comes from light-emitting diode chips, especially high-power light-emitting diodes. The large amount of heat generated by the chips leads to the The temperature rises rapidly, the luminous efficiency is reduced, and the life is shortened. Therefore, how to efficiently conduct and dissipate a large amount of heat so that the light-emitting diode works at a lower temperature is one of the keys to manufacturing high-power light-emitting diodes and light-emitting diode lamps.
  • the prior art applies the luminescent powder around the chip to obtain a uniform light color distribution of the emitted light (for example, US Patent No. 6,252,254; 6,417,019; 6,580,097; 6,642,652), but the luminescent powder is on the chip Around, high temperature, low luminous efficiency, short life, especially high-power light-emitting diodes. How to reduce the working temperature of the light emitting powder to make the light emitting diode with high efficiency and long life is another key to manufacturing high power light emitting diode and light emitting diode lamp.
  • a white light emitting diode with a luminescent powder the luminescent powder is coated on the inner or outer surface of a lens above a chip in order to reduce the operating temperature of the luminescent powder (for example, US Patent No. 6,429,583 and Patent WO2004021461).
  • Light-emitting diodes due to the large chip area of the light-emitting diode, and the size of the lens should generally increase in proportion to the increase in the chip area, so the lens is large, bulky, high cost, and the lens medium is prone to yellowing, which shortens the life of the light-emitting diode; meanwhile, There is a lens above the light-emitting diode chip.
  • the prior art white light emitting diode has a low color rendering index, generally only about 75, and improving the light emitting powder can increase the color rendering index, but at the same time, it will cause a significant decrease in light emitting efficiency. How to improve the color rendering index while having high luminous efficiency is another key to manufacturing high-quality high-power light-emitting diodes and light-emitting diode lamps.
  • the color temperature of white light emitting diodes is immutable. How to make high-power light emitting diodes and light emitting diode lamps with variable color temperatures from cool white to warm white is another subject of light emitting diode lighting.
  • red, blue, green, or yellow-colored white light emitting diodes have the advantages of high light emitting efficiency and can be made into white light emitting diodes with different color temperatures, but the light color distribution of the output light is not uniform.
  • This is another subject of manufacturing such high power white light emitting diodes and light emitting diode lamps.
  • the metal base of a high-power light-emitting diode is generally regarded as a heat sink. In fact, it is necessary for a high-power light-emitting diode device and a light-emitting diode lamp, and an external heat dissipation device.
  • the metal base of the light-emitting diode is a heat-conducting device.
  • an aluminum-based circuit board is commonly used as a heat-conducting device.
  • This aluminum substrate is alloyed aluminum, which has a thermal conductivity of only about 25 to 40% of copper, and has poor mechanical strength and easy deformation.
  • the heat-conducting between the aluminum substrate and the external heat sink The large layer thickness, large thermal resistance, and easy failure lead to the failure of the light emitting diode.
  • the aluminum substrate has a low reflectance and is difficult to be plated with silver. Therefore, it is difficult to obtain a high-efficiency light-emitting diode for a light-emitting diode whose chip is directly mounted on the aluminum substrate. Summary of the invention
  • a first object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode. It includes at least one light-emitting diode chip and a high-thermal-conductivity metal-based heat-conducting device.
  • the light-emitting diode chip is mounted on the metal substrate in a face-up manner (ie, the pn junction is on the light-emitting metal base) or a flip-chip (ie, the pn junction is on the light-emitting metal base).
  • the light-emitting surface of the light-emitting diode chip is led out by a lead or a metal-based insulator; the light-emitting surface of the light-emitting diode chip has a light-transmitting medium layer, and a light-transmitting cover above the light-transmitting medium layer. There is a layer of luminescent powder on the inner surface.
  • the at least one light emitting diode chip is at least one light emitting diode chip that emits blue light or ultraviolet light.
  • the highly thermally conductive metal-based and metal-based insulator is a copper-based circuit board, and the light reflecting surface is a silver-plated surface.
  • the metal-based circuit board has at least one screw hole or screw, and is tightly and reliably thermally connected with an external heat sink by screws or rivets.
  • a second object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode. It includes at least one light-emitting diode chip and a high-thermal-conductivity metal-based heat-conducting device.
  • the light-emitting diode chip is mounted on the metal substrate in the form of a pn junction on the light emitting side or a flip chip (that is, the pn junction on the light emitting metal base).
  • the light-emitting surface of the light-emitting diode chip is led out by the lead wire and a conductor insulated from the metal base.
  • the light-emitting surface of the light-emitting diode chip has a light-transmitting medium layer, and a light-emitting bubble shell is arranged above the light-transmitting medium layer.
  • a light emitting powder layer is provided on the inner surface of the cover shell.
  • a third object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode, which includes at least one light-emitting diode chip that emits blue or ultraviolet light and at least one and at least one colored visible light-emitting diode chip, By adjusting the relative luminous intensity of each chip, the light color, color temperature, and color rendering index of the output light can be adjusted, and a white light emitting diode with a high color rendering index, a different color temperature, or a variable color temperature can be manufactured.
  • a fourth object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode, which includes at least one group of red, blue, green, or yellow light-emitting diode chips.
  • the light-transmitting cover or light-transmitting bubble shell mixes each luminous color to obtain different color temperatures, the color temperature is variable, Light-emitting diodes displaying white or other colored light with an exponential color.
  • a fifth object of the present invention is to provide a high-power, high-efficiency, long-life light-emitting diode lamp, which includes At least one high-power light emitting diode of the present invention, a heat sink, a driving circuit and its casing, and an electrical connector.
  • a thermally conductive glue such as a silver paddle, between the metal-based heat-conducting device of the light-emitting diode and the heat sink, and they are fixed to each other with screws or rivets.
  • the high-power light-emitting diode includes: at least one light-emitting diode chip, a metal base of high thermal conductivity material, the light-emitting diode chip is mounted on a light reflecting surface or a light reflecting bowl on the metal base, and the light-emitting diode chip
  • the pn junction is mounted toward the metal base, or the substrate of the light emitting diode chip is mounted toward the metal base; the electrode of the light emitting diode chip is led out through a lead wire or a conductor insulated from the metal base; the light emitting surface of the light emitting diode chip is transparent.
  • An optical medium layer, a light-transmitting cover or a light-transmitting shell is provided above the light-transmitting medium layer, and a light-emitting powder layer is provided on the inner surface of the light-transmitting cover or the light-transmissive bubble, and an air gap or Fill with a second light-transmitting substance.
  • the metal base of the high thermal conductivity material is a metal base of copper, copper alloy or other metal base circuit boards of high thermal conductivity material; the metal base circuit board has at least one through hole or at least one notch in its periphery,
  • the light-emitting diode is fixed on the external heat sink with screws or rivets; the rivets are solid or hollow, and the lead wires of the light-emitting diodes pass from the center of the hollow-core rivets to the rear of the light-emitting diodes;
  • the shape of the metal-based circuit board is Circle, square, rectangle or polygon.
  • the metal-based circuit board is provided with electronic components for controlling the light emission of each light-emitting diode chip.
  • the light reflecting surface or the light reflecting bowl on the metal base is a silver-plated surface, and the light emitting diode chip is fixed on the metal base light reflecting surface or the light reflecting bowl with a high thermal conductivity adhesive or solder.
  • the at least one light-emitting diode chip is at least one light-emitting diode chip that emits blue or ultraviolet light;
  • the light-emitting powder layer is at least one layer, and each layer has at least one light-emitting light-emitting powder layer, and the light-emitting powder
  • the light-emitting powder of the layer contains a light-transmitting medium.
  • the luminescent powder layer further includes a protective layer.
  • the light-transmitting medium layer is a temperature-resistant, UV-resistant silica gel, epoxy resin or plastic medium layer; it also contains a light scattering agent layer.
  • the light-transmitting cover or light-transmitting bubble shell is made of glass or plastic, is transparent or diffuse, and has a shape of a circle, a square, or other geometric shapes, and a shape of a light exit surface thereof is a spherical surface, a curved surface, or a flat surface; It is fixed to the metal base with glue or a fixed frame.
  • a small lens or a small prism optical structure is further provided on the transparent cover or the transparent bubble shell.
  • the invention also provides a high-power light-emitting diode, including: at least one group of light-emitting diode chips emitting red, blue, green, or yellow, a metal base made of a material of thermal conductivity, and the light-emitting side of the light-emitting diode chip is transparent.
  • a light-scattering layer is provided on the inner surface of the cover or the light-transmitting bubble shell; or the light-transmitting cover itself is a light-scattering light-transmitting cover; the light-transmitting bubble itself is a light-scattering light-transmitting bubble shell;
  • the light emitting colors are mixed to obtain light emitting diodes with different color temperatures, variable color temperatures, and high color rendering index white light or other color light and variable color light.
  • the invention also provides a high-power light-emitting diode, comprising: at least one light-emitting diode chip, a metal substrate of high thermal conductivity material, and a light-reflecting metal electrode on a pn junction of the light-emitting diode chip is directly adhered to the metal through a high thermal conductivity adhesive.
  • the high thermal conductivity adhesive is a fine diamond powder adhesive or an oxide thermal conductive adhesive;
  • a light-emitting diode chip electrode on a metal substrate has an insulating layer and a conductive layer at a welding position, and the electrodes of the light-emitting diode chip are conductively bonded.
  • the agent is drawn from the conductive layer; the conductive adhesive is solder or conductive glue mixed with silver beads, gold beads, or copper beads.
  • the invention also provides a high-power light-emitting diode, comprising: at least one light-emitting diode chip that emits blue light and at least one, each at least one light-emitting diode chip that emits other colored visible light, a metal substrate with a high thermal conductivity material, and the light-emitting
  • the light emitting surface of the diode chip has a light-transmitting medium layer, a light-transmitting cover or a light-transmitting bubble shell above the light-transmitting medium layer, and a light-emitting powder layer on the inner surface of the light-transmitting cover or light-transmitting bubble shell.
  • An air gap or a second light-transmitting substance is filled between the luminescent powder layers.
  • the present invention also provides a high-power light-emitting diode lamp, including: at least one high-power light-emitting diode of the present invention, a heat sink, a driver and its casing, and an electrical connection device;
  • the electrical connection device is an ordinary tungsten filament lamp, or Spiral, socket-type lamp caps and / or plugs of energy-saving lamps;
  • the light-emitting diodes are tightly fixed to a heat sink with a high thermal conductivity adhesive layer therebetween;
  • the heat sink is a heat sink with a heat sink,
  • the input of the driver is connected to an external power source through a lead and an electrical connection device, and its output is connected to a light emitting diode through a lead to light up the light emitting diode.
  • the connection between the light emitting diode and the electrical connection device may also be provided with a material of high thermal conductivity. Copper plate. It also includes at least one small electric fan installed in the heat sink, and a driver drives the small electric
  • the high-power light-emitting diode and the high-power light-emitting diode of the invention have simple structure, low thermal resistance, simple luminescent powder coating process, uniform luminescent powder layer, low luminescent powder temperature, high luminous efficiency, long life, and white light color rendering index High, good color mixing, variable color temperature, suitable for mass production, low cost, etc .; can be made into monochrome, color mixing, color, variable color power LED, high color rendering index and variable color temperature white light power LED; Used for lighting, decorative lights, solar lights, mining lights, table lamps, bedside lights, vehicle lights, stage lights and displays. BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic structural diagram of an embodiment of a high-power light-emitting diode according to the present invention.
  • FIG. 2 is a schematic structural diagram of another embodiment of a high-power light-emitting diode according to the present invention.
  • FIG. 3 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 4 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 5 is a schematic structural diagram of an embodiment of a high-power light-emitting diode according to the present invention.
  • FIG. 6 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 7 is a schematic structural diagram of another embodiment of a high-power light-emitting diode according to the present invention.
  • FIG. 8 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 9 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 10 is a schematic structural diagram of another embodiment of a high-power light emitting diode according to the present invention.
  • FIG. 11 is a schematic structural diagram of an embodiment of a high-power LED lamp according to the present invention.
  • metal-based circuit board 3 metal-based 4
  • insulating layer 5 conductive layer 6—light reflecting surface 7-—high thermal conductivity glue or solder
  • thermo conductive glue 29 small silver beads 30—a luminescent powder and light transmitting medium
  • FIG. 1 is a schematic structural diagram of a high-power light-emitting diode according to an embodiment of the present invention. It includes at least one light emitting diode chip 1, at least one metal-based circuit board 2, and the metal substrate 3 of the circuit board 2 is a high thermal conductivity board such as copper.
  • the metal substrate has an insulating layer 4 and a conductive layer 5, and the chip is mounted on The light reflecting surface on the metal base or the light reflecting bowl 6 (shown as an example of the light reflecting surface in FIG.
  • the light emitting diode chip 1 is fixed on the metal base 3 with a high thermal conductivity adhesive or solder 7, and the reflecting surface 6 is High-reflectivity surfaces such as silver-plated surfaces, the electrodes of the light-emitting diode chip are connected to the conductive layer 5 through a lead wire 8, and the conductive layer 5 is also used to connect an external power source, and the light-emitting diode can be turned on by turning on the external power source;
  • the at least one light-emitting diode chip 1 is at least one light-emitting diode chip that emits blue or ultraviolet light
  • the light-emitting powder layer 11 is at least one layer, and each layer has at least one kind of light emitting
  • the luminescent powder layer 11 includes a luminescent powder and a light-transmitting medium, and may also have a protective layer.
  • the luminescent powder can absorb the blue light generated by the chip and emit light such as yellow and mix with the blue light to generate white light, or absorb the chip.
  • the generated ultraviolet light generates white light
  • the light-transmitting medium layer 9 is a temperature-resistant and ultraviolet-resistant medium layer, such as silica gel, epoxy resin, or plastic; it may also contain white or transparent light scattering powder 12, For example, titanium dioxide, alumina, magnesium oxide and other metal oxide powders, silver powder, etc .
  • the light-transmitting cover 10 is made of glass or plastic and is transparent or diffuse, and its shape may be round, square or other geometric shapes. Shape, the shape of the light exit surface can be spherical, curved or flat, and there can also be a series of small lenses and small prisms and other optical structures, it is fixed on the metal base 3 with glue 13, the fixing glue 13 can be transparent
  • the optical medium layer 9 is the same.
  • the metal-based circuit board 2 has at least one through hole 15 or at least one notch in the periphery thereof, which is used to send
  • the photodiode is fixed on the external heat sink 18 with screws 16 or rivets 17; when rivets are used, the rivets can be solid or hollow cores, and the lead wires 19 of the light emitting diodes can be led from the center of the hollow core rivets to the light emitting diodes.
  • Rear there is a thermally conductive adhesive 20 between the metal-based circuit board 2 and the heat sink 18.
  • the shape of the metal-based circuit board 2 may be circular, square, rectangular, polygonal, or the like.
  • the shell of the at least one light-emitting diode chip 1 is at least a group of red, blue, green, or yellow light-emitting diode chips, and a light-transmitting cover or light-transmitting bubble shell (as shown in FIG. 5) on the light emitting side of the chip is on the inner surface.
  • a light-scattering layer 11a or the light-transmitting cover or the light-transmitting bubble shell itself is light-scattering, and the light-transmitting cover or the light-transmissive bubble shell mixes each luminous color to obtain white light with different color temperature, variable color temperature, and high display index color. Light-emitting diodes of other colors.
  • FIG. 2 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention.
  • the light-transmitting cover 10a is a planar light-transmitting cover; the light-emitting powder layer 11 on the inner surface of the light-transmitting cover 10a has a light-transmitting medium layer 9 between the chip 1 and the chip 1; No lens is formed; the light reflecting surface is a light reflecting bowl 6.
  • the other numbers in FIG. 2 have the same meaning as in FIG. 1.
  • FIG. 3 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that the high-thermal-conductivity metal base 3 is a high-thermal-conductivity metal base with at least one screw 21 and is made of copper, copper alloy, aluminum, etc., and is used to more closely use screws or rivets for light-emitting diodes.
  • FIG. 4 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention.
  • said high thermal conductivity metal substrate having at least one screw 3 to 21, and having at least one through hole 15a;
  • La of the LED chip is flip-chip, i.e., chip 24 flip-chip solder la first
  • the silicon or other substrate 25 is fixed on the light reflecting bowl 6 of the metal base 3 with a high thermal conductivity adhesive or solder 7.
  • the other numbers in FIG. 4 have the same meanings as in FIG. 3.
  • FIG. 5 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention.
  • the transparent cover above the transparent medium layer 9 is a transparent bubble 10a.
  • the other numbers in Fig. 5 have the same meanings as those in Figs.
  • FIG. 6 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that the light reflecting metal electrode 26 on the pn junction of the chip 1b is directly adhered to the metal base 3 through a high thermal conductivity adhesive 27, and the high thermal conductivity adhesive is a fine diamond powder adhesive, an oxide thermal conductive adhesive, etc .; On the metal base 3, the chip electrode is welded with an insulating layer 4 and a conductive layer 5.
  • the electrodes of the LED chip are led out of the conductive layer 5 through a conductive adhesive 28;
  • the conductive adhesive 28 is a mixture of small silver beads, small gold beads or small
  • the smaller beads 29 can be used to make the high thermal conductivity layer 27 very thin, thereby obtaining a light-emitting diode with a small thermal resistance.
  • the metal electrode 26 does not need to be insulated from the metal base 3, the high thermal conductivity layer 27 may also use a conductive adhesive.
  • the other numbers in FIG. 6 have the same meaning as those shown in FIG. 1.
  • FIG. 7 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention.
  • the at least one light emitting diode chip is at least one blue light emitting diode chip 1 and at least one colored visible light, at least one visible light emitting diode chip lc each, and the chip lc can be used to adjust the color temperature and color rendering index of the output light.
  • the other numbers in FIG. 7 have the same meaning as those shown in FIG. 1.
  • FIG. 8 is a schematic structural diagram of an embodiment of the high-power light-emitting diode with adjustable color temperature and color rendering index of the present invention shown in FIG. 7.
  • 30 is a light-transmitting medium layer with luminescent powder.
  • the other numbers in Figure 8 have the same meaning as those shown in Figures 1, 3, and 5.
  • FIG. 9 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that a light-transmitting cover 10a is provided above the light-emitting diode chips lb and lc, and an electronic component 31 is further installed on the metal base circuit board for controlling the light emission of each light-emitting diode chip.
  • the other numbers in Figure 9 have the same meaning as those shown in Figures 2 and 6.
  • FIG. 10 is a schematic structural diagram of another embodiment of the high-power light-emitting diode of the present invention. It is characterized in that the light-emitting diode chips lb and lc are provided with a light-transmitting bubble shell 10b above them.
  • the other numbers in Fig. 9 have the same meaning as those shown in Figs.
  • FIG. 11 is a schematic diagram showing the principle and structure of an embodiment of a light-emitting diode lamp manufactured using the high-power light-emitting diode of the present invention. It includes at least one high-power light-emitting diode of the present invention, a heat-dissipating device 33, a driver 34 and its casing 35, and an electrical connection device 36, such as spiral-type, socket-type lamp caps of different sizes, such as ordinary tungsten filament lamps.
  • the light emitting diode 32 is tightly fixed on the heat sink 33 with a high thermal conductivity adhesive layer 37 therebetween; the heat sink 33 is a heat sink 38 with a heat sink, and it may also have at least one small electric fan 39
  • the input of the driver 34 is connected to the external power supply via the lead 40 and the electrical connection device 36, and its output is connected to the light emitting diode 1 via the lead 41 for lighting the light emitting diode 1.
  • the driver 6 drives the small electric fan 10 via the lead 22 at the same time.
  • the heat sink 38 and the small electric fan 39 can effectively dissipate the heat generated by the light emitting diode 32 and the driver 34.
  • connection between the light emitting diode 32 and the electrical connection device 36 can also be provided.
  • the copper plate 42 with high thermal conductivity enables the light-emitting diode to work at a lower temperature to make a high-power, high-efficiency, long-life light-emitting diode lamp.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)

Abstract

L'invention concerne une DEL haute puissance qui comprend au moins une puce de DEL émettant lumière bleue, UV ou au moins un type de lumière visible, et un substrat métallique. La puce et montée sur la surface réfléchissante du substrat face vers le haut ou vers le bas. Une couche à milieu de transmission est appliquée en revêtement sur la surface d'émission de la puce. Une coque à pouvoir transmissif ou un couvercle à pouvoir transmissif se trouve sur ladite couche comme élément de sortie lumineuse, et la surface interne est revêtue d'une couche de poudre luminescente ou d'une couche de diffusion. Une couche d'air se trouve entre l'élément considéré et la couche de transmission. Ledit élément peut mélanger la lumière de différentes puces et la lumière de la couche de poudre luminescente. Le substrat est à haute conductivité thermique, équipé d'une carte de circuits imprimés. Il existe au moins un vis ou un trou de vis pour la connexion avec des puits de chaleur additionnels. La DEL offre de nombreux avantages, du type configuration simple, faible résistance thermique, processus de revêtement simple en poudre luminescente, couche uniforme de la même poudre, température inférieure de ladite poudre, grande efficacité, longévité, fort indice chromogène pour la lumière blanche, mélange de couleurs satisfaisant, température de couleur variable et faible coût.
PCT/CN2004/001353 2003-11-25 2004-11-25 Del et lampe a del WO2005067064A1 (fr)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
CNB2003101137821A CN100375300C (zh) 2003-11-25 2003-11-25 大功率发光二极管
CN200310113782.1 2003-11-25
CNU2004200028386U CN2677742Y (zh) 2004-01-13 2004-01-13 大功率发光二极管灯
CN200420002838.6 2004-01-13
CN200420004811.0 2004-02-12
CNU2004200048110U CN2674654Y (zh) 2004-02-12 2004-02-12 裸芯片发光二极管
CNU2004200229525U CN2696133Y (zh) 2004-05-18 2004-05-18 功率型发光二极管
CN200420022952.5 2004-05-18
CN200420051310.8 2004-05-24
CNU2004200513108U CN2696134Y (zh) 2004-05-24 2004-05-24 色温可调的白光发光二极管
CNU2004200867901U CN2713647Y (zh) 2004-07-27 2004-07-27 功率型白光发光二极管
CN200420086790.1 2004-07-27
CN200420009547.7 2004-10-07
CNU200420009547XU CN2784927Y (zh) 2004-10-11 2004-10-11 一种等电点测定用电泳槽

Publications (1)

Publication Number Publication Date
WO2005067064A1 true WO2005067064A1 (fr) 2005-07-21

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PCT/CN2004/001353 WO2005067064A1 (fr) 2003-11-25 2004-11-25 Del et lampe a del

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WO (1) WO2005067064A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007075143A1 (fr) * 2005-12-29 2007-07-05 Lam Chiang Lim Boîtier de diodes électroluminescentes de forte puissance fixé de manière amovible à un dissipateur de chaleur
WO2009005314A2 (fr) * 2007-07-04 2009-01-08 Sam-Pyo Hong Ampoule del à abat-jour échangeable
WO2011012437A1 (fr) * 2009-07-31 2011-02-03 Osram Gesellschaft mit beschränkter Haftung Dispositif d'éclairage et procédé de fabrication d'un dispositif d'éclairage
EP2322853A3 (fr) * 2005-09-27 2011-09-21 Immobiliare Eder S.R.L. Dispositif d'éclairage de type DEL ou de signalisation lumineuse
US8350453B2 (en) * 2010-05-25 2013-01-08 Nepes Led Corporation Lamp cover including a phosphor mixed structure for light emitting device
RU2511564C1 (ru) * 2012-09-17 2014-04-10 Юрий Николаевич Рубан Светильник светодиодный (варианты)
RU2590824C1 (ru) * 2015-05-20 2016-07-10 Сергей Иванович Титков Светодиодный светильник и способ охлаждения светодиодного источника света

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE29804149U1 (de) * 1998-03-09 1998-06-18 Chen, Hsing, Hsinchu Leuchtdiode (LED) mit verbesserter Struktur
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6184544B1 (en) * 1998-01-29 2001-02-06 Rohm Co., Ltd. Semiconductor light emitting device with light reflective current diffusion layer
CN1315484A (zh) * 2000-03-27 2001-10-03 通用电气公司 紫外线发光二极管器件中产生高发光度、高显色指数白光的单成份荧光粉
CN1341966A (zh) * 2001-09-29 2002-03-27 葛世潮 大功率发光二极管发光装置
US20020079506A1 (en) * 1997-09-01 2002-06-27 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US20020080501A1 (en) * 2000-06-20 2002-06-27 Hiroyuki Kawae Light permeable fluorescent cover for light emitting diode
US6514782B1 (en) * 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
WO2003030274A1 (fr) * 2001-09-27 2003-04-10 Nichia Corporation Dispositif emetteur de lumiere et procede de fabrication associe

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020079506A1 (en) * 1997-09-01 2002-06-27 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US6184544B1 (en) * 1998-01-29 2001-02-06 Rohm Co., Ltd. Semiconductor light emitting device with light reflective current diffusion layer
DE29804149U1 (de) * 1998-03-09 1998-06-18 Chen, Hsing, Hsinchu Leuchtdiode (LED) mit verbesserter Struktur
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
US6514782B1 (en) * 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
CN1315484A (zh) * 2000-03-27 2001-10-03 通用电气公司 紫外线发光二极管器件中产生高发光度、高显色指数白光的单成份荧光粉
US20020080501A1 (en) * 2000-06-20 2002-06-27 Hiroyuki Kawae Light permeable fluorescent cover for light emitting diode
WO2003030274A1 (fr) * 2001-09-27 2003-04-10 Nichia Corporation Dispositif emetteur de lumiere et procede de fabrication associe
CN1341966A (zh) * 2001-09-29 2002-03-27 葛世潮 大功率发光二极管发光装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2322853A3 (fr) * 2005-09-27 2011-09-21 Immobiliare Eder S.R.L. Dispositif d'éclairage de type DEL ou de signalisation lumineuse
EP1977456A4 (fr) * 2005-12-29 2014-03-05 Lam Chiang Lim Boîtier de diodes électroluminescentes de forte puissance fixé de manière amovible à un dissipateur de chaleur
EP1977456A1 (fr) * 2005-12-29 2008-10-08 Lam Chiang Lim Boîtier de diodes électroluminescentes de forte puissance fixé de manière amovible à un dissipateur de chaleur
US7549773B2 (en) 2005-12-29 2009-06-23 Lam Chiang Lim LED housing
US7796030B2 (en) 2005-12-29 2010-09-14 Lam Chiang Lim LED housing
WO2007075143A1 (fr) * 2005-12-29 2007-07-05 Lam Chiang Lim Boîtier de diodes électroluminescentes de forte puissance fixé de manière amovible à un dissipateur de chaleur
WO2009005314A2 (fr) * 2007-07-04 2009-01-08 Sam-Pyo Hong Ampoule del à abat-jour échangeable
WO2009005314A3 (fr) * 2007-07-04 2009-02-26 Sam-Pyo Hong Ampoule del à abat-jour échangeable
WO2011012437A1 (fr) * 2009-07-31 2011-02-03 Osram Gesellschaft mit beschränkter Haftung Dispositif d'éclairage et procédé de fabrication d'un dispositif d'éclairage
CN102472479A (zh) * 2009-07-31 2012-05-23 欧司朗股份有限公司 发光装置和用于制造发光装置的方法
US8350453B2 (en) * 2010-05-25 2013-01-08 Nepes Led Corporation Lamp cover including a phosphor mixed structure for light emitting device
RU2511564C1 (ru) * 2012-09-17 2014-04-10 Юрий Николаевич Рубан Светильник светодиодный (варианты)
RU2590824C1 (ru) * 2015-05-20 2016-07-10 Сергей Иванович Титков Светодиодный светильник и способ охлаждения светодиодного источника света

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