CN201408780Y - LED for replacing traditional bulb of projector - Google Patents
LED for replacing traditional bulb of projector Download PDFInfo
- Publication number
- CN201408780Y CN201408780Y CN2009201308230U CN200920130823U CN201408780Y CN 201408780 Y CN201408780 Y CN 201408780Y CN 2009201308230 U CN2009201308230 U CN 2009201308230U CN 200920130823 U CN200920130823 U CN 200920130823U CN 201408780 Y CN201408780 Y CN 201408780Y
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- CN
- China
- Prior art keywords
- projecting apparatus
- conventional bulb
- base plate
- electrode
- luminescence chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
An LED (light emitting diode) for replacing the traditional bulb of a projector comprises a non-metallic baseplate, wherein a composite metal layer positive electrode and a composite metal layer negative electrode are arranged on the non-metallic baseplate; one electrode of the composite metal layer positive and negative electrodes extends towards the interior of the non-metallic baseplate to themiddle part of the non-metallic baseplate to form an extending part, a layer of carbon nanometer pipes are arranged at the extending part, a luminous chip is arranged on the carbon nanometer pipes; and the positive and the negative electrode of the luminous chip are respectively connected with the metal layer positive and negative poles through an electrode wire; fluorescent glue is arranged on the luminous chip; the carbon nanometer pipes and the luminous chip as well as the electrode wire are encapsulated as a whole through the fluorescent glue; and a lens is arranged on the top surface of the fluorescent glue. The utility model has the advantages of low heat resistance, high optical efficiency and long service life. The high power LED is used for replacing the traditional bulb of the projector, the volume of the projector is enabled to be reduced, the energy is saved, the optical path is simple, and the light can be used directly or through a Fresnel lens.
Description
Technical field
The utility model relates to a kind of great power LED, refers in particular to the LED that can be used for substituting the conventional projector bulb that projecting apparatus is low with optical efficiency height, thermal resistance, the life-span is long.
Background technology
At present, the research to the heat dissipation problem of great power LED both at home and abroad just has been in the starting stage, existing technology mostly concentrates on method heat radiations such as implementing air-cooled, water-cooled and loop heat pipe in the outside of LED, and these radiating modes just part have solved by the heat abstractor of the encapsulation of the LED heat dissipation problem to external environment.But the heat that LED work produces must be transmitted to the heat abstractor that the second level encapsulates from led chip or module by thermal interfacial material at first effectively, and traditional thermal interfacial material (what mainly adopt is elargol) is owing to the bottleneck of the low LED of the becoming package system of its thermal conductivity efficiently radiates heat, therefore, present great power LED is because the problem of heat radiation, and can not be used for projecting apparatus, that is to say the conventional bulb that can not replace projecting apparatus.
Summary of the invention
Sign in the defective of above background technology, the utility model proposes the alternative projecting apparatus conventional bulb LED that a kind of thermal resistance is low, optical efficiency is high, the life-span is long.
The technical solution of the utility model is: design a kind of alternative projecting apparatus conventional bulb LED, comprise non-metal base plate, be provided with the complex metal layer positive and negative electrode at described non-metal base plate, wherein, an electrode in the described complex metal layer positive and negative electrode, the middle part that extends to described non-metal base plate to described non-metal base intralamellar part constitutes extension, on described extension, be provided with one deck carbon nano-tube, be provided with luminescence chip on described carbon nano-tube, the positive and negative electrode of described luminescence chip links by electrode wires and metal level positive and negative electrode respectively; Be provided with fluorescent glue on described luminescence chip, described fluorescent glue is packaged as a whole described carbon nano-tube, luminescence chip and electrode wires, is provided with lens on described fluorescent glue end face.
Described non-metal base plate is ceramic substrate or polycrystalline silicon substrate.
Described electrode wires is a gold thread.
Described lens are silica-gel lens.
The lighting angle of described silica-gel lens is between 10 degree are spent to 160.
Described luminescence chip is the luminescence chip of 15W-35W.
Described complex metal layer positive and negative electrode is to be coated with nickel dam on described copper layer or silver slurry layer, and is silver coated on nickel dam, and described copper layer or silver slurry layer are etched on the non-metal base plate.
The thickness of described copper layer or silver slurry layer is 10-18um.The thickness of described nickel dam is 3-5um.
The thickness of described silver layer is 3-5um.
The utility model has adopted the novel thermal interfacial material carbon nano-tube with superior heat conductivity energy, because carbon nano-tube is the one dimension Heat Conduction Material, there is not the border phon scattering, so high-quality carbon nano-tube material has the superior heat conductivity energy, measured data of experiment shows that the thermal conductivity of carbon nano-tube can reach 3000W/mK, the thermal conductivity of the metal material of copper higher far above thermal conductivity is approximately 400W/mK, and the thermal conductivity of aluminium alloy is about 180W/mK.Carbon nano-tube material for my company with coact research and development of Hong Kong University of Science and Thchnology, applied for China and United States Patent (USP).LED power in the utility model is 25W, and luminous flux can reach more than 2000 lumens, can realize that reference color temperature is bigger, volume is little, and heat dispersion is fabulous, and thermal impedance is low, light decay reduces, and fully can substitute in the market projecting apparatus used bulb up to more than 60,000 hours useful life.Though the conventional projector light source has the high advantage of luminous intensity,, light is after the light source outgoing, and through reflector, condenser, Fresnel Lenses can offer liquid crystal board and use.But the selling at exorbitant prices of projecting apparatus bulb, power is big, power consumption height, light path complexity.The previous projecting apparatus bulb of order price is about 4000 yuan, and each bulb can only use more than 2000 hour, and on average each hour needs the cost of 2-3 unit, and the luminous flux of 2000 lumens, and bulb power reaches 165W, and power consumption is very big.Large power white light LED price of the present utility model estimates that about 700 yuan its useful life, on average each hour only needed 0.012 yuan use cost up to more than 60,000 hours.So, the price cost of projecting apparatus can reduce greatly, and user's use cost also will farthest be reduced, and this kind of great power LED volume is little, not only energy-conservation but also environmental protection, and light path is simple, and light can use directly or only by Fresnel Lenses.
Description of drawings
Fig. 1 is the structural representation of a kind of embodiment of the utility model.
Embodiment
See also Fig. 1, that Fig. 1 disclosed is a kind of alternative projecting apparatus conventional bulb LED, comprise non-metal base plate 1, non-metal base plate 1 in the present embodiment is a ceramic wafer, be provided with complex metal layer positive and negative electrode 21,22 in the relative both sides of described non-metal base plate 1, wherein complex metal layer positive pole 21 extends to form extension 23 to the middle part of non-metal base plate 1, obviously, also complex metal layer negative pole 22 can be extended to form extension to the middle part of non-metal base plate 1 in practicality is produced; (carbon nano-tube 3 among the figure is techniques of painting of band expansiveness to be provided with or directly to generate one deck carbon nano-tube 3 on described extension 23, mainly be for the view convenience, in fact, carbon nano-tube 3 is very thin one decks), described carbon nano-tube 3 is the research and development that coact of the applicant and Hong Kong University of Science and Thchnology, and described carbon nano-tube 3 has been applied China and United States Patent (USP); Be bonded with luminescence chip 4 on described carbon nano-tube 3, the chip fixing glue that is used for bonding luminescence chip 4 can be all kinds of fixing with pasting glue; Described luminescence chip 4 is 25W, and certainly, described luminescence chip 4 also can adopt the luminescence chip of 15W-35W, mainly decides according to client's needs.The positive and negative electrode of described luminescence chip 4 links by electrode wires 51,52 and complex metal layer positive and negative electrode 21,22 respectively, in the present embodiment, and described electrode wires the 51, the 52nd, gold thread; Be provided with fluorescent glue 6 on described luminescence chip 4, described fluorescent glue 6 is packaged as a whole described carbon nano-tube 3, luminescence chip 4 and electrode wires 51,52, is provided with lens 7 on described fluorescent glue end face.Lens described in this example 7 are silica-gel lens.Its lighting angle is between 10 degree are spent to 160.Non-metal base plate 1 in the present embodiment is a ceramic substrate, and obviously, non-metal base plate 1 also can be used polycrystalline silicon substrate.Complex metal layer positive and negative electrode the 21, the 22nd in the present embodiment, earlier with copper layer or silver slurry layer with etching method attached on non-metal base plate 1 surface, and then on described copper layer or silver slurry layer plating one deck nickel dam, plating one deck silver layer and forming on nickel dam again.The thickness of described copper layer or silver slurry layer can be between 10-18um; The thickness of described nickel dam and silver layer can be between 3-5um.
During use, the complex metal layer positive and negative electrode 21,22 of LED is joined with the both positive and negative polarity of power supply respectively, luminescence chip 4 electrified light emittings, light directive fluorescent glue 6 produces white lights, penetrates behind scioptics 7 optically focused again.
Examples comparative adopts same amusement projecting apparatus, uses the VPL-CX5 projecting apparatus bulb of LED of the present utility model and SONY (Sony) ratio of opposing respectively, and its condition and result are as follows:
Amusement projecting apparatus parameter: Display Technique: LCD; Projector distance: 1.5-7.2 rice; Liquid crystal board foot: 0.7 inch p-Si TFT micro mirror array liquid; The highest demonstration resolution: 1024*768.
(1), adopts 8 the utility model LED that size is 40mil, wavelength is the blue chip of 455-457.5nm, adopts the utility model packing forms to encapsulate, and the electric current by every luminescence chip 4 is 850mA, voltage is 3.5V, and then the gross power of this large power white light LED is 23.8W.The result for the finished product test photoelectric parameter is: colour temperature 6008K, light efficiency are 92Lm/W, and total light flux is 2189.6Lm, light and wear out after 1000 hours, and the brightness actual measurement is 2156.7Lm, and attenuation ratio is about 1.5%.
(2), adopt the VPL-CX5 of Sony projecting apparatus bulb, 165W UHP.
The result is a colour temperature: 6000K; Nominal light: 2000 lumens; Bulb service life: 2000 hours
More than test shows, use the packaged large power white light LED parameters of coming out of the utility model identical substantially with the parameter area of projecting apparatus usefulness conventional bulb, and it is simple with the light path design of the alternative conventional projector bulb of this kind of LED, cost reduces greatly, can be used for substituting the projecting apparatus conventional bulb fully.
The example of the above, it is preferred embodiments of the present utility model, be not to limit practical range of the present utility model,, be included in the utility model claim so all equivalences of doing according to described feature of the utility model claim and principle change or modify.
Claims (10)
1, a kind of alternative projecting apparatus conventional bulb LED, it is characterized in that: comprise non-metal base plate (1), just be provided with complex metal layer at described non-metal base plate (1), negative electrode (21,22), wherein, described complex metal layer just, negative electrode (21,22) electrode in, the middle part that extends to described non-metal base plate (1) to described non-metal base plate (1) inside constitutes extension (23), on described extension (23), be provided with one deck carbon nano-tube (3), be provided with luminescence chip (4) on described carbon nano-tube (3), described luminescence chip (4) just, negative electrode is respectively by electrode wires (51,52) with metal level just, negative pole (21,22) link; Be provided with fluorescent glue (6) on described luminescence chip (4), described fluorescent glue (6) is packaged as a whole described carbon nano-tube (3), luminescence chip (4) and electrode wires (51,52), is provided with lens (7) on described fluorescent glue end face.
2, alternative projecting apparatus conventional bulb LED according to claim 1, it is characterized in that: described non-metal base plate (1) is ceramic substrate or polycrystalline silicon substrate.
3, alternative projecting apparatus conventional bulb LED according to claim 1 and 2, it is characterized in that: described electrode wires (51,52) is a gold thread.
4, alternative projecting apparatus conventional bulb LED according to claim 3, it is characterized in that: described lens (7) are silica-gel lens.
5, alternative projecting apparatus conventional bulb LED according to claim 4 is characterized in that: the lighting angle of described silica-gel lens is between 10 degree are spent to 160.
6, alternative projecting apparatus conventional bulb LED according to claim 5, it is characterized in that: described luminescence chip (4) is the luminescence chip of 15W-35W.
7, alternative projecting apparatus conventional bulb LED according to claim 6, it is characterized in that: described complex metal layer positive and negative electrode (21,22) is to be coated with nickel dam on described copper layer or silver slurry layer, silver coated on nickel dam, described copper layer or silver slurry layer are etched on the non-metal base plate.
8, alternative projecting apparatus conventional bulb LED according to claim 7, it is characterized in that: the thickness of described copper layer or silver slurry layer is 10-18um.
9, according to claim 7 or 8 described alternative projecting apparatus conventional bulb LED, it is characterized in that: the thickness of described nickel dam is 3-5um.
10, alternative projecting apparatus conventional bulb LED according to claim 9, it is characterized in that: the thickness of described silver layer is 3-5um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201308230U CN201408780Y (en) | 2009-04-14 | 2009-04-14 | LED for replacing traditional bulb of projector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201308230U CN201408780Y (en) | 2009-04-14 | 2009-04-14 | LED for replacing traditional bulb of projector |
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| Publication Number | Publication Date |
|---|---|
| CN201408780Y true CN201408780Y (en) | 2010-02-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009201308230U Expired - Fee Related CN201408780Y (en) | 2009-04-14 | 2009-04-14 | LED for replacing traditional bulb of projector |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102182951A (en) * | 2011-05-10 | 2011-09-14 | 广州大学 | Light emitting diode (LED) high-power lighting lamp of novel radiating device |
| CN102468402A (en) * | 2010-11-17 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light-emitting diode packaging structure, and manufacturing method thereof |
| CN102782396A (en) * | 2010-03-01 | 2012-11-14 | 松下电器产业株式会社 | LED lamp, LED illumination device, and LED module |
| TWI425680B (en) * | 2010-10-29 | 2014-02-01 | Advanced Optoelectronic Tech | Light emitting diode package |
-
2009
- 2009-04-14 CN CN2009201308230U patent/CN201408780Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102782396A (en) * | 2010-03-01 | 2012-11-14 | 松下电器产业株式会社 | LED lamp, LED illumination device, and LED module |
| CN102782396B (en) * | 2010-03-01 | 2015-05-06 | 松下电器产业株式会社 | LED lamp, LED illumination device, and LED module |
| USRE47591E1 (en) | 2010-03-01 | 2019-09-03 | Panasonic Intellectual Property Management Co., Ltd. | LED lamp, LED illumination device, and LED module |
| TWI425680B (en) * | 2010-10-29 | 2014-02-01 | Advanced Optoelectronic Tech | Light emitting diode package |
| CN102468402A (en) * | 2010-11-17 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light-emitting diode packaging structure, and manufacturing method thereof |
| CN102182951A (en) * | 2011-05-10 | 2011-09-14 | 广州大学 | Light emitting diode (LED) high-power lighting lamp of novel radiating device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Shenzhen Hans Green Power Lighting Technology Co., Ltd. Assignor: Guoye-Xingguang Electronics Co., Ltd., Shenzhen Contract record no.: 2011440020474 Denomination of utility model: LED for replacing traditional bulb of projector Granted publication date: 20100217 License type: Exclusive License Record date: 20111215 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100217 Termination date: 20150414 |
|
| EXPY | Termination of patent right or utility model |