CN105529390A - Inorganic-packaged self-focusing integrated UVLED module - Google Patents
Inorganic-packaged self-focusing integrated UVLED module Download PDFInfo
- Publication number
- CN105529390A CN105529390A CN201610019686.8A CN201610019686A CN105529390A CN 105529390 A CN105529390 A CN 105529390A CN 201610019686 A CN201610019686 A CN 201610019686A CN 105529390 A CN105529390 A CN 105529390A
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- uvled
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- electrical plate
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- 229910052802 copper Inorganic materials 0.000 claims abstract description 53
- 239000010949 copper Substances 0.000 claims abstract description 53
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 52
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000565 sealant Substances 0.000 claims abstract description 9
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 22
- 230000000694 effects Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 241000218202 Coptis Species 0.000 claims description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 3
- 238000013499 data model Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000011049 pearl Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an inorganic-packaged self-focusing integrated UVLED module, which comprises a UVLED lamp component, a UVLED chip, an optical light guide plate, quartz glass and a front cover, wherein the UVLED lamp component comprises a copper-based circuit board; the copper-based circuit board is provided with a die bonding region; the UVLED chip is fixed at the middle part of the die bonding region; the optical light guide plate is used for reflecting light of the side surface of the UVLED chip and then ejecting the light through a normal direction of the UVLED chip; the front cover comprises a cover board with a groove structure; a notch of the groove structure is toward one side of the copper-based circuit board; the bottom of the groove structure is the front end surface; a light outlet window is formed in the front end surface; the quartz glass is bonded to the bottom of the groove structure by a sealant and covers the light outlet window; the rear end surface of the front cover is fixedly connected with the copper-based circuit board; a cavity is formed between the groove structure of the front cover and the copper-based circuit board; and the cavity is filled with a protective gas.
Description
Technical field
The present invention relates to a kind of UVLED lighting module, specifically for ultraviolet lighting field.
Background technology
At present, the encapsulation of LED adopts the organic material such as silica gel, epoxy resin to encapsulate chip more, these material transmitances are good, be easy to operation, but UV resistant performance is poor, very easily aged deterioration under ultraviolet environments, and its thermal expansion easily causes component failure, therefore organic material is unfavorable for encapsulating strong ultraviolet LED.So seek anti-ultraviolet aging easy inorganic encapsulated technique and supporting parts very necessary.
In addition, the UVLED in commercial Application aspect and ultraviolet leds, in order to increase uv energy, to reach effect, the method for many employing lamp pearls splicing and the method for UVLED matrix, increase its irradiation energy and irradiated area.And the lighting angle of lamp pearl is generally 120 degree, the angle of LED matrix is generally 140 degree, so looser in bright dipping, only has the Ultraviolet radiation of part in effective coverage, and under the operational environment that some are high to optical path requirements, likely other components and parts are impacted, the requirement of practical application cannot be reached.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned deficiency of the prior art, and disclose a kind of integrated UVLED module of Self-concentration of inorganic encapsulated, it adopts inorganic encapsulated structure, can promote quality and the life-span of whole UVLED module.
In order to achieve the above object, the present invention is achieved by the following technical solutions:
The integrated UVLED module of Self-concentration of inorganic encapsulated, comprises:
-UVLED lamp body component; Described UVLED lamp body component comprises Copper based electrical plate, and described Copper based electrical plate is provided with crystal bonding area, pad area and surface lines, and surface, crystal bonding area is provided with Gold plated Layer;
-UVLED chip; Described UVLED chip is fixed on the middle part of crystal bonding area; Described UVLED chip is multiple, and all UVLED chips adopt die bond technique to be fixed on the crystal bonding area of Copper based electrical plate;
-for by after the ambient light line reflection of UVLED chip through the optical light guiding plate that penetrated by the normal direction of UVLED chip; Described optical light guiding plate is located at the both sides, crystal bonding area of Copper based electrical plate;
-quartz glass;
-protecgulum; Described protecgulum is the cover plate comprising groove structure; The notch of described groove structure is towards described Copper based electrical plate side, and the bottom land of described groove structure is front end face; Front end face is provided with light-emitting window, and described quartz glass adopts fluid sealant be bonded in the bottom land of groove structure and cover described light-emitting window; The rear end face of described protecgulum is fixedly connected with described Copper based electrical plate; Cavity is formed between the groove structure of described protecgulum and Copper based electrical plate; Described optical light guiding plate and UVLED chip are arranged on described inside cavity; Described inside cavity fills the protective gas preventing inside cavity device to be oxidized.
The preferred embodiment of the present invention and further improvement as follows:
(1) edge of the groove structure of described protecgulum is the flange being parallel to Copper based electrical plate surface, described flange is the rear end face of protecgulum, described flange arranges screw hole, and it is bonding and fixing after passing screw hole by screw that described flange and Copper based electrical plate pass through fluid sealant; On described Copper based electrical plate, the screw hole position of corresponding protecgulum is provided with screwed hole.In this preferred implementation, screw hole can be set to stepped hole, then screw terminal can realize the effect embedding screw hole, makes structure compacter.
(2) described protective gas is the nitrogen that inert gas or purity are greater than 99.9%; Described crystal bonding area is square structure.
(3) all UVLED chips are by forming power supply circuits after gold thread connection in series-parallel, and described power supply circuits are connected with the positive pole on Copper based electrical plate and negative electricity; Described pad area is provided with pad, and described pad is divided into positive terminal pad and negative terminal pad;
Described optical light guiding plate is by pressing or be cementingly fixed on Copper based electrical plate; The reflecting surface of described optical light guiding plate is arcuate structure, and forms mirror effect by polishing and technique for vacuum coating;
Described Quartz glass surfaces plated film.
(4) be also included as the external power source of described UVLED chip power supply and be arranged on the cooling mechanism of described Copper based electrical back.
Further: described cooling mechanism is radiating fin or the radiating fin for being assembled with radiator fan.
Further: described crystal bonding area, pad area and surface lines are arranged on the front of Copper based electrical plate and one-body molded; Described Copper based electrical plate surface insulation.In this preferred implementation, surface insulation is referred to the region except conductive component is insulation system, thus, ensure that reliable conduction.
Beneficial effect of the present invention is:
(1) adopt inorganic encapsulated mode, inner filling specific gas, discharges air, do not re-use the organic substance encapsulation such as silica gel, thus there is not chip and gold thread oxidation, there is not the xanthochromia that silica gel packaging mode produces, carbonization, thermal expansion causes the risk of Module Fail;
(2) optical light guiding plate is adopted, it is by the light guiding surface of specific curves, vacuum coating becomes mirror effect, can by chip sides the ultraviolet light sent out reflex to its normal direction, thus the large spoke of UV irradiation energy strengthens, and reduce the lighting angle of its UVLED module, its bright dipping branch is concentrated, reduce the remaining light of scattering, effective light emission rate increases by more than 50 percent;
(3) adopt Copper based electrical plate integration packaging, the thermoelectricity realizing chip is separated, and heat-conducting effect is good, and useful life increases; And the spacing of chip and series-parallel system, can make certain change as required, thus add versatility and the flexibility of substrate.
Accompanying drawing explanation
Fig. 1 is the structural representation of the main apparent direction of a kind of embodiment of the present invention;
Fig. 2 is that the A-A of Fig. 1 is to sectional structure schematic diagram;
Fig. 3 is the structural representation of the main apparent direction of a kind of embodiment of lamp body component of the present invention;
Fig. 4 is the structural representation of the right apparent direction of Fig. 1.
Description of reference numerals:
1-lamp body component, 2-light guide plate, 3-quartz glass, 4-protecgulum, 5-cavity, 6-fluid sealant, 7-screw, 8-fluid sealant, 9-screw hole, 11-Copper based electrical plate, 12-UVLED chip, 13-crystal bonding area, 14-positive pole, 15-negative pole.
Embodiment
By particular specific embodiment, embodiments of the present invention are described below, person skilled in the art scholar the content disclosed by this specification can understand other advantages of the present invention and effect easily.
As shown in figures 1-4, it illustrates the specific embodiment of the present invention, a kind of integrated UVLED module of Self-concentration of inorganic encapsulated, be the integrated design, it comprises:
-UVLED lamp body component 1; Described UVLED lamp body component comprises Copper based electrical plate 11, and described Copper based electrical plate 11 is provided with crystal bonding area 13, pad area and surface lines, surface, crystal bonding area 13 is provided with Gold plated Layer, crystal bonding area 13, pad area and Copper based electrical plate are the integrated design, common composition Copper based electrical plate 11.The heat that UVLED chip operation produces can directly reach Copper based electrical plate 11; UVLED chip 12 adopts eutectic mode to be fixed on the middle part of crystal bonding area 13.Described crystal bonding area is preferably square;
Described UVLED chip 12 is multiple, and multiple UVLED chip 12 adopts eutectic technology to be fixed on the crystal bonding area 13 of Copper based electrical plate 11.Multiple UVLED chip series-parallel circuit relation as required, forms circuit by gold thread ultra-sonic welded.Described pad area arranges pad, and described pad is divided into positive terminal pad and negative terminal pad, is correspondingly respectively electrically connected to positive pole on Copper based electrical plate and negative pole.UVLED chip adopts array arrangement, and this kind of structure realizes integrated chip, and thermoelectricity is separated.When arranging, Copper based electrical plate 11 surface is with surface lines, and surface insulation.
-optical light guiding plate 2, is located at the both sides, crystal bonding area of the Copper based electrical plate 11 of lamp body, and described optical light guiding plate 2 is by the pressing of specific position or be cementingly fixed on Copper based electrical plate 11.The light guiding surface of optical light guiding plate 2 forms according to the digital control processing of particular optical data model, and after polishing, vacuum coating becomes mirror effect.
-quartz glass 3, for high transmission rate quartz is made, plated film processing can be carried out in surface, high temperature resistant, UV resistant.
-protecgulum 4, described protecgulum is the cover plate of a hollow structure, and front end face is provided with light-emitting window, and described quartz glass 3 adopts fluid sealant to be bonded in the interior grooves of protecgulum 4, covers the light-emitting window of protecgulum 4.After the rear end face of described protecgulum 4 and described UVLED lamp body component 1 adopt fluid sealant to bond, and connected by screw 7.Thus protecgulum 4, quartz glass 3 and UVLED lamp body component 1 form a cavity 5 jointly.Specific gas is filled in this cavity 5.
Operation principle of the present invention is as follows:
Be connected on by external power supply on the both positive and negative polarity of the Copper based electrical plate of the Self-concentration UVLED module of described inorganic encapsulated, cooling mechanism is attached at the back side of Copper based electrical plate.When the power is turned on, UVLED module is lighted, and each UVLED chip 13 is simultaneously luminous.The ultraviolet light front normal direction light sent, directly by quartz glass 3, shines out; The ultraviolet light sent, illegally to light, is irradiated on optical light guiding plate 2, is refracted to quartz glass 3, shines out.The heat that UVLED chip produces conducts to Copper based electrical plate 11 by back, then conducts to cooling mechanism by Copper based electrical plate 11.When power supply disconnects, UVLED module power-down, UVLED chip stops luminous, completes a course of work.
In sum, the present invention has following technique effect:
1, present invention employs Copper based electrical plate and quartz glass, the inorganic substances such as optical light guiding plate are as UVLED encapsulating material, because metal, quartz are relative to organosilicon material, the aspect characteristics such as it is corrosion-resistant, weatherability, resistance to ultraviolet are excellent, the stability of UVLED device can be increased substantially, reliability and life-span, possess good welding performance simultaneously, can follow-up welding and application conditions be adapted to.
2, inside cavity of the present invention fills specific gas, avoid the application of organic material (as silica gel), be highly suitable for ultraviolet LED and be not suitable for using the encapsulation (as the encapsulation of super high power COB series products) of organic material device, solve the easy aged deterioration problem of related device encapsulating material under adverse circumstances.
3, the present invention adopts Copper based electrical plate directly to encapsulate, and heat-conducting effect is good; Adopt integrated chip mode, it is more tight that UVLED chip can be bound, to improve unit are light efficiency intensity.The series-parallel system of UVLED chip, easily changes as required, need not repeat plate of drawing a design out, with cost saving expenditure and time loss.
4, optical light guiding plate that inside modules of the present invention adopts 2, the light guiding surface of optical light guiding plate 2 forms according to the digital control processing of particular optical data model, and after polishing, vacuum coating becomes mirror effect.It is illegal to ultraviolet light that UVLED chip sends, and reflected, revise UV light irradiates direction, make light from normal direction bright dipping by the light guiding surface of optical light guiding plate 2.Thus increase the energy irradiation intensity of irradiating working region, solve the luminescence loss of UVLED side and the problem of astigmatism.
By reference to the accompanying drawings the preferred embodiment for the present invention is explained in detail above; but the invention is not restricted to above-mentioned execution mode; in the ken that those of ordinary skill in the art possess; can also make a variety of changes under the prerequisite not departing from present inventive concept; these changes relate to correlation technique well-known to those skilled in the art, and these all fall into the protection range of patent of the present invention.
Do not depart from the spirit and scope of the present invention and can make other changes many and remodeling.Should be appreciated that and the invention is not restricted to specific execution mode, scope of the present invention is defined by the following claims.
Claims (7)
1. the integrated UVLED module of the Self-concentration of inorganic encapsulated, is characterized in that, comprise:
-UVLED lamp body component; Described UVLED lamp body component comprises Copper based electrical plate, and described Copper based electrical plate is provided with crystal bonding area, pad area and surface lines, and surface, crystal bonding area is provided with Gold plated Layer;
-UVLED chip; Described UVLED chip is fixed on the middle part of crystal bonding area; Described UVLED chip is multiple, and all UVLED chips adopt die bond technique to be fixed on the crystal bonding area of Copper based electrical plate;
-for by after the ambient light line reflection of UVLED chip through the optical light guiding plate that penetrated by the normal direction of UVLED chip; Described optical light guiding plate is located at the both sides, crystal bonding area of Copper based electrical plate;
-quartz glass;
-protecgulum; Described protecgulum is the cover plate comprising groove structure; The notch of described groove structure is towards described Copper based electrical plate side, and the bottom land of described groove structure is front end face; Front end face is provided with light-emitting window, and described quartz glass adopts fluid sealant be bonded in the bottom land of groove structure and cover described light-emitting window; The rear end face of described protecgulum is fixedly connected with described Copper based electrical plate; Cavity is formed between the groove structure of described protecgulum and Copper based electrical plate; Described optical light guiding plate and UVLED chip are arranged on described inside cavity; Described inside cavity fills the protective gas preventing inside cavity device to be oxidized.
2. the integrated UVLED module of the Self-concentration of a kind of inorganic encapsulated as claimed in claim 1, it is characterized in that: the edge of the groove structure of described protecgulum is the flange being parallel to Copper based electrical plate surface, described flange is the rear end face of protecgulum, described flange arranges screw hole, and it is bonding and fixing after passing screw hole by screw that described flange and Copper based electrical plate pass through fluid sealant; On described Copper based electrical plate, the screw hole position of corresponding protecgulum is provided with screwed hole.
3. the integrated UVLED module of the Self-concentration of a kind of inorganic encapsulated as claimed in claim 1, is characterized in that: described protective gas is the nitrogen that inert gas or purity are greater than 99.9%; Described crystal bonding area is square structure.
4. the integrated UVLED module of the Self-concentration of a kind of inorganic encapsulated as claimed in claim 1, is characterized in that:
All UVLED chips are by forming power supply circuits after gold thread connection in series-parallel, and described power supply circuits are connected with the positive pole on Copper based electrical plate and negative electricity; Described pad area is provided with pad, and described pad is divided into positive terminal pad and negative terminal pad;
Described optical light guiding plate is by pressing or be cementingly fixed on Copper based electrical plate; The reflecting surface of described optical light guiding plate is arcuate structure, and forms mirror effect by polishing and technique for vacuum coating;
Described Quartz glass surfaces plated film.
5. the integrated UVLED module of Self-concentration of a kind of inorganic encapsulated as described in as arbitrary in Claims 1 to 4, is characterized in that: be also included as the external power source of described UVLED chip power supply and be arranged on the cooling mechanism of described Copper based electrical back.
6. the integrated UVLED module of the Self-concentration of a kind of inorganic encapsulated as claimed in claim 5, is characterized in that: described cooling mechanism is radiating fin or the radiating fin for being assembled with radiator fan.
7. the integrated UVLED module of the Self-concentration of a kind of inorganic encapsulated as claimed in claim 5, is characterized in that: described crystal bonding area, and pad area and surface lines are arranged on the front of Copper based electrical plate and one-body molded; Described Copper based electrical plate surface insulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610019686.8A CN105529390B (en) | 2016-01-13 | 2016-01-13 | A kind of integrated UVLED modules of the Self-concentration of inorganic encapsulated |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610019686.8A CN105529390B (en) | 2016-01-13 | 2016-01-13 | A kind of integrated UVLED modules of the Self-concentration of inorganic encapsulated |
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| Publication Number | Publication Date |
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| CN105529390A true CN105529390A (en) | 2016-04-27 |
| CN105529390B CN105529390B (en) | 2018-09-04 |
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|---|---|---|---|
| CN201610019686.8A Expired - Fee Related CN105529390B (en) | 2016-01-13 | 2016-01-13 | A kind of integrated UVLED modules of the Self-concentration of inorganic encapsulated |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108257947A (en) * | 2016-12-29 | 2018-07-06 | 晶能光电（江西）有限公司 | A kind of UVLED area sources module |
| CN108933185A (en) * | 2017-05-26 | 2018-12-04 | 黄国益 | Support construction uses its light emitting device and its processing method |
| CN109860285A (en) * | 2017-11-30 | 2019-06-07 | 株洲中车时代电气股份有限公司 | High power semiconductor component |
| CN111379981A (en) * | 2020-04-28 | 2020-07-07 | 东莞市索菲电子科技有限公司 | Light-concentrating high-color-rendering-index high-brightness surface-mounted LED |
| CN111552038A (en) * | 2019-02-12 | 2020-08-18 | 立诚光电股份有限公司 | Laser direct forming optical device and process thereof |
| CN112089862A (en) * | 2020-10-20 | 2020-12-18 | 山西华微紫外半导体科技有限公司 | Ultraviolet semiconductor parallel UVC LED all-inorganic or semi-inorganic packaging structure |
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| JP2013157152A (en) * | 2012-01-27 | 2013-08-15 | Asahi Kasei Corp | Light guide plate, half slit sheet, and optical film |
| CN103325922A (en) * | 2013-06-05 | 2013-09-25 | 广州市鸿利光电股份有限公司 | LED encapsulating method |
| CN205335294U (en) * | 2016-01-13 | 2016-06-22 | 深圳仁为光电有限公司 | Inorganic encapsulation from integrated UVLED module of spotlight |
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2016
- 2016-01-13 CN CN201610019686.8A patent/CN105529390B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013157152A (en) * | 2012-01-27 | 2013-08-15 | Asahi Kasei Corp | Light guide plate, half slit sheet, and optical film |
| CN103325922A (en) * | 2013-06-05 | 2013-09-25 | 广州市鸿利光电股份有限公司 | LED encapsulating method |
| CN205335294U (en) * | 2016-01-13 | 2016-06-22 | 深圳仁为光电有限公司 | Inorganic encapsulation from integrated UVLED module of spotlight |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108257947A (en) * | 2016-12-29 | 2018-07-06 | 晶能光电（江西）有限公司 | A kind of UVLED area sources module |
| CN108933185A (en) * | 2017-05-26 | 2018-12-04 | 黄国益 | Support construction uses its light emitting device and its processing method |
| CN108933185B (en) * | 2017-05-26 | 2021-01-05 | 黄国益 | Support structure, light emitting device using the same, and method of processing the same |
| CN109860285A (en) * | 2017-11-30 | 2019-06-07 | 株洲中车时代电气股份有限公司 | High power semiconductor component |
| CN109860285B (en) * | 2017-11-30 | 2021-05-11 | 株洲中车时代半导体有限公司 | High power semiconductor element |
| CN111552038A (en) * | 2019-02-12 | 2020-08-18 | 立诚光电股份有限公司 | Laser direct forming optical device and process thereof |
| CN111379981A (en) * | 2020-04-28 | 2020-07-07 | 东莞市索菲电子科技有限公司 | Light-concentrating high-color-rendering-index high-brightness surface-mounted LED |
| CN112089862A (en) * | 2020-10-20 | 2020-12-18 | 山西华微紫外半导体科技有限公司 | Ultraviolet semiconductor parallel UVC LED all-inorganic or semi-inorganic packaging structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105529390B (en) | 2018-09-04 |
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