CN105529390B - A kind of integrated UVLED modules of the Self-concentration of inorganic encapsulated - Google Patents

A kind of integrated UVLED modules of the Self-concentration of inorganic encapsulated Download PDF

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Publication number
CN105529390B
CN105529390B CN201610019686.8A CN201610019686A CN105529390B CN 105529390 B CN105529390 B CN 105529390B CN 201610019686 A CN201610019686 A CN 201610019686A CN 105529390 B CN105529390 B CN 105529390B
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CN
China
Prior art keywords
copper based
based electrical
led chip
plate
electrical plate
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Expired - Fee Related
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CN201610019686.8A
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Chinese (zh)
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CN105529390A (en
Inventor
童泽路
寇卫峰
钟远洋
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SHENZHEN RENWEI OPTOELECTRONIC Co Ltd
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SHENZHEN RENWEI OPTOELECTRONIC Co Ltd
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Priority to CN201610019686.8A priority Critical patent/CN105529390B/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements

Abstract

The invention discloses a kind of Self-concentrations of inorganic encapsulated to integrate UVLED modules, it includes:UVLED lamp body components;The UVLED lamp body components include Copper based electrical plate, and the Copper based electrical plate is equipped with crystal bonding area;It also include UV LED chip;The UV LED chip is fixed on the middle part of crystal bonding area;Also include for the optical light guiding plate through being projected by the normal direction of UV LED chip after the side light line reflection by UV LED chip;It also include quartz glass;It also include protecgulum;The protecgulum is the cover board comprising groove structure;For the notch of the groove structure towards Copper based electrical plate side, the slot bottom of the groove structure is front end face;Front end face is equipped with light-emitting window, and the quartz glass is bonded in the slot bottom and the covering light-emitting window of groove structure using fluid sealant;The rear end face of the protecgulum is fixedly connected with the Copper based electrical plate;Cavity is formed between the groove structure and Copper based electrical plate of the protecgulum;The inside cavity fills protective gas.

Description

A kind of integrated UVLED modules of the Self-concentration of inorganic encapsulated
Technical field
The present invention relates to a kind of UVLED lighting modules, are specifically used for ultraviolet lighting field.
Background technology
Chip is packaged currently, the encapsulation of LED mostly uses the organic materials such as silica gel, epoxy resin, these materials are saturating It is good, easily operated to cross rate, but UV resistant performance is poor, under ultraviolet environments easily aged deterioration and its thermal expansion be easy to lead Component failure is caused, therefore organic material is unfavorable for encapsulating strong ultraviolet LED.So seeking the easy inorganic encapsulated of anti-ultraviolet aging Technique and its mating component are very necessary.
In addition, UVLED, that is, ultraviolet leds in terms of commercial Application, in order to increase uv energy, to reach using effect Fruit, the method for mostly using the method and UVLED matrixes of lamp bead splicing, increases its irradiation energy and irradiated area.And the hair of lamp bead Angular is generally 120 degree, and the angle of LED matrix is generally 140 degree, so relatively being dissipated in light extraction, the only ultraviolet light of part It is radiated at effective coverage, and under some working environments high to optical path requirements, it is possible to other components are impacted, It is unable to reach the requirement of practical application.
Invention content
In view of the above-mentioned deficiencies in the prior art, the technical problem to be solved by the present invention is that disclosing a kind of inorganic envelope The Self-concentration of dress integrates UVLED modules, uses inorganic encapsulated structure, can promote quality and the service life of entire UVLED modules.
In order to achieve the above object, the present invention is achieved by the following scheme:
A kind of integrated UVLED modules of the Self-concentration of inorganic encapsulated, including:
- UVLED lamp body components;The UVLED lamp body components include Copper based electrical plate, and the Copper based electrical plate is equipped with solid Crystalline region, pad area and surface lines, crystal bonding area surface are equipped with Gold plated Layer;
UV LED chip;The UV LED chip is fixed on the middle part of crystal bonding area;The UV LED chip is multiple, is owned UV LED chip is fixed on using die bond technique on the crystal bonding area of Copper based electrical plate;
For the optics through being projected by the normal direction of UV LED chip after the side light line reflection of UV LED chip is guide-lighting Plate;The optical light guiding plate is set to the crystal bonding area both sides of Copper based electrical plate;
Quartz glass;
Protecgulum;The protecgulum is the cover board comprising groove structure;The notch of the groove structure is towards the Copper based electrical The slot bottom of plate side, the groove structure is front end face;Front end face is equipped with light-emitting window, and the quartz glass is using sealing gluing Tie the slot bottom and the covering light-emitting window in groove structure;The rear end face of the protecgulum is fixed with the Copper based electrical plate to be connected It connects;Cavity is formed between the groove structure and Copper based electrical plate of the protecgulum;The optical light guiding plate and UV LED chip setting exist The inside cavity;The inside cavity filling prevents the protective gas that inside cavity device aoxidizes.
The preferred embodiment of the present invention and further improvement are as follows:
(1) edge of the groove structure of the protecgulum is the flange for being parallel to Copper based electrical plate surface, before the flange is Screw hole is arranged on the flange for the rear end face of lid, and the flange is with Copper based electrical plate by sealing glue sticking and passing through screw It is fixed after screw hole;The screw hole site that protecgulum is corresponded on the Copper based electrical plate is provided with threaded hole.This preferred implementation In mode, screw hole can be set to stepped hole, then screw terminal can realize the effect of embedded screw hole so that structure is more It is compact.
(2) protective gas is the nitrogen that inert gas or purity are more than 99.9%;The crystal bonding area is rectangular knot Structure.
(3) all UV LED chips are by forming power supply circuit, the power supply circuit and Copper based electrical plate after gold thread connection in series-parallel On anode and cathode electrical connection;Pad is provided on the pad area, the pad is divided into positive terminal pad and negative terminal pad;
The optical light guiding plate is by pressing or cementing is fixed on Copper based electrical plate;The reflecting surface of the optical light guiding plate is Arcuate structure, and mirror effect is formed by polishing and technique for vacuum coating;
The Quartz glass surfaces plated film.
(4) also it is included as the external power supply of UV LED chip power supply and mounted on the Copper based electrical back Cooling mechanism.
It is further:The cooling mechanism is radiating fin or to be assembled with the radiating fin of radiator fan.
It is further:The crystal bonding area, pad area and surface lines be arranged the front of Copper based electrical plate and one at Type;The Copper based electrical plate surface insulation.Refer to the area other than conductive component by surface insulation in this preferred embodiment Domain is insulation system, thus, ensure that reliable conduction.
Present invention has the advantages that:
(1) use inorganic encapsulated mode, inside filling specific gas that air is discharged, does not use the organic matters such as silica gel envelope Dress, from chip and gold thread oxidation may be not present, there is no xanthochromia caused by silica gel packaging mode, carbonization, thermal expansion leads to mould The risk of block failure;
(2) optical light guiding plate is used, by the light guiding surface of specific curves, vacuum coating, can be by chip side at mirror effect The ultraviolet light that face is sent out is reflected into its normal direction, to the big spoke enhancing of UV irradiation energies, and reduces the hair of its UVLED module Angular makes its light extraction branch concentrate, and reduces the remaining light of scattering, and effective light emission rate increases by 50 or more percent;
(3) Copper based electrical plate integration packaging is used, realizes the thermoelectricity separation of chip, heat-conducting effect is good, and service life increases Add;And the spacing and series-parallel system of chip can make certain change as needed, to increase the versatility of substrate And flexibility.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram in the main view direction of specific implementation mode of the present invention;
Fig. 2 is the A-A of Fig. 1 to schematic cross-sectional view;
Fig. 3 is a kind of structural schematic diagram in the main view direction of specific implementation mode of the lamp body component of the present invention;
Fig. 4 is the structural schematic diagram of the right apparent direction of Fig. 1.
Reference sign:
1- lamp body components, 2- light guide plates, 3- quartz glass, 4- protecgulums, 5- cavitys, 6- fluid sealants, 7- screws, 8- sealings Glue, 9- screw holes, 11- Copper based electrical plates, 12-UVLED chips, the crystal bonding areas 13-, 14- anodes, 15- cathode.
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this explanations by particular specific embodiment below Content disclosed by book understands other advantages and effect of the present invention easily.
As shown in figures 1-4, it illustrates the specific implementation mode of the present invention, a kind of Self-concentration of inorganic encapsulated is integrated UVLED modules, are the integrated design comprising:
- UVLED lamp body components 1;The UVLED lamp body components include Copper based electrical plate 11, on the Copper based electrical plate 11 Equipped with crystal bonding area 13, pad area and surface lines, 13 surface of crystal bonding area are equipped with Gold plated Layer, crystal bonding area 13, pad area and copper-based electricity Road plate is the integrated design, and collectively constitutes Copper based electrical plate 11.Heat caused by UV LED chip work can be directly transferred to copper-based Circuit board 11;UV LED chip 12 is fixed on the middle part of crystal bonding area 13 using eutectic mode.The crystal bonding area is preferably rectangular;
The UV LED chip 12 is multiple, and multiple UV LED chips 12 are fixed on Copper based electrical plate 11 using eutectic technology Crystal bonding area 13 on.The series-parallel circuit relationship of multiple UV LED chips as required forms circuit by gold thread ultrasonic welding. Pad is set on the pad area, and the pad is divided into positive terminal pad and negative terminal pad, and correspondence is electrically connected to copper-based electricity respectively Anode on the plate of road and cathode.UV LED chip uses array arrangement, and such structure realizes integrated chip, and thermoelectricity detaches.If When setting, 11 surface of Copper based electrical plate has surface lines, and surface insulation.
Optical light guiding plate 2 is set to the crystal bonding area both sides of the Copper based electrical plate 11 of lamp body, and the optical light guiding plate 2 is by spy Fixed position pressing cementing is fixed on Copper based electrical plate 11.The light guiding surface of optical light guiding plate 2 is according to particular optical data mould Type digital control processing forms, and after polishing, vacuum coating is at mirror effect.
Quartz glass 3 is made of high transparency quartz, and surface can carry out plated film processing, high temperature resistant, UV resistant.
Protecgulum 4, the protecgulum are the cover board of a hollow structure, and front end face is equipped with light-emitting window, and the quartz glass 3 is adopted It is bonded in fluid sealant in the interior grooves of protecgulum 4, covers the light-emitting window of protecgulum 4.The rear end face of the protecgulum 4 with it is described After UVLED lamp body components 1 are using sealing gluing knot, and connected by screw 7.To protecgulum 4, quartz glass 3 and UVLED lamp bodies A cavity 5 is collectively formed in component 1.Specific gas is filled in this cavity 5.
Working principle of the present invention is as follows:
External power supply is connected on the positive and negative anodes of the Copper based electrical plate of the Self-concentration UVLED modules of the inorganic encapsulated, is dissipated Heat engine structure is attached at the back side of Copper based electrical plate.When the power is turned on, UVLED modules are lighted, and each UV LED chip 13 is sent out simultaneously Light.The ultraviolet light front normal direction light sent out shines out directly by quartz glass 3;The ultraviolet light sent out illegally to Light is irradiated on optical light guiding plate 2, is refracted to quartz glass 3, is shone out.The heat that UV LED chip generates passes through back Conduction is conducted to Copper based electrical plate 11, then by Copper based electrical plate 11 to cooling mechanism.When power supply disconnects, the power-off of UVLED modules, UV LED chip stops shining, and completes a course of work.
In conclusion the present invention has the following technical effects:
1, present invention employs Copper based electrical plate and quartz glass, the inorganic substances such as optical light guiding plate are encapsulated as UVLED Material, since metal, quartz are relative to organosilicon material, corrosion-resistant, weatherability, resistance to ultraviolet etc. excellent can The stability of UVLED devices, reliability and service life are increased substantially, good welding performance is provided simultaneously with, adapts to subsequently weld It connects and application conditions.
2, inside cavity of the invention fills specific gas, avoids the application of organic material (such as silica gel), is highly suitable for Ultraviolet light LED and the encapsulation (such as super high power COB classes product encapsulates) for being not suitable for using organic material device, solve severe ring Related device encapsulating material spoilage problems easy to aging under border.
3, the present invention is directly encapsulated using Copper based electrical plate, and heat-conducting effect is good;Using integrated chip mode, UVLED cores Piece can be bound even closer, to improve unit area light efficiency intensity.The series-parallel system of UV LED chip is easy as needed It is changed, without repeating plate of drawing a design out, to save money expenditure and time loss.
4, the used optical light guiding plate 2 of inside modules of the present invention, the light guiding surface of optical light guiding plate 2 is according to particular optical data Model numerical control is process, and after polishing, vacuum coating is at mirror effect.UV LED chip is sent out illegal to ultraviolet light, is led to The light guiding surface reflection for crossing optical light guiding plate 2, is modified ultraviolet light direction of illumination, makes light from normal direction light extraction.To increase The energy irradiation intensity for adding irradiation working region, solves the problems, such as the luminous loss of the sides UVLED and astigmatism.
The preferred embodiment for the present invention is explained in detail above in conjunction with attached drawing, but the present invention is not limited to above-mentioned implementations Mode within the knowledge of a person skilled in the art can also be without departing from the purpose of the present invention It makes a variety of changes, these variations are related to the relevant technologies well-known to those skilled in the art, these both fall within patent of the present invention Protection domain.
Many other changes and remodeling can be made by not departing from the spirit and scope of the present invention.It should be appreciated that the present invention is not It is limited to specific embodiment, the scope of the present invention is defined by the following claims.

Claims (4)

1. a kind of Self-concentration of inorganic encapsulated integrates UVLED modules, which is characterized in that include:
- UVLED lamp body components;The UVLED lamp body components include Copper based electrical plate, and the Copper based electrical plate is equipped with die bond Area, pad area and surface lines, crystal bonding area surface are equipped with Gold plated Layer;
UV LED chip;The UV LED chip is fixed on the middle part of crystal bonding area;The UV LED chip is multiple, is owned UV LED chip is fixed on using die bond technique on the crystal bonding area of Copper based electrical plate;
For the optical light guiding plate projected by the normal direction of UV LED chip will to be passed through after the side light line reflection of UV LED chip; The optical light guiding plate is set to the crystal bonding area both sides of Copper based electrical plate;
Quartz glass;
Protecgulum;The protecgulum is the cover board comprising groove structure;The notch of the groove structure is towards the Copper based electrical plate one The slot bottom of side, the groove structure is front end face;Front end face is equipped with light-emitting window, and the quartz glass is bonded in using fluid sealant The slot bottom and the covering light-emitting window of groove structure;The rear end face of the protecgulum is fixedly connected with the Copper based electrical plate;Institute It states and forms cavity between the groove structure of protecgulum and Copper based electrical plate;The optical light guiding plate and UV LED chip are arranged described Inside cavity;The inside cavity filling prevents the protective gas that inside cavity device aoxidizes;
The edge of the groove structure of the protecgulum is the flange for being parallel to Copper based electrical plate surface, and the flange is the rear end of protecgulum Screw hole is arranged on the flange for face, and the flange is with Copper based electrical plate by sealing glue sticking and passing through screw by screw It is fixed behind hole;The screw hole site that protecgulum is corresponded on the Copper based electrical plate is provided with threaded hole;
The protective gas is the nitrogen that inert gas or purity are more than 99.9%;The crystal bonding area is square structure;
All UV LED chips by forming power supply circuit after gold thread connection in series-parallel, the power supply circuit on Copper based electrical plate just Pole and cathode electrical connection;Pad is provided on the pad area, the pad is divided into positive terminal pad and negative terminal pad;
The optical light guiding plate is by pressing or cementing is fixed on Copper based electrical plate;The reflecting surface of the optical light guiding plate is arc Structure, and mirror effect is formed by polishing and technique for vacuum coating;
The Quartz glass surfaces plated film.
2. a kind of Self-concentration of inorganic encapsulated as described in claim 1 integrates UVLED modules, it is characterised in that:Also it is included as The external power supply of the UV LED chip power supply and the cooling mechanism mounted on the Copper based electrical back.
3. a kind of Self-concentration of inorganic encapsulated as claimed in claim 2 integrates UVLED modules, it is characterised in that:The heat dissipation Mechanism is radiating fin.
4. a kind of Self-concentration of inorganic encapsulated as described in claim 1 integrates UVLED modules, it is characterised in that:The die bond Area, pad area and surface lines are arranged in the front of Copper based electrical plate and integrated molding;The Copper based electrical plate surface insulation.
CN201610019686.8A 2016-01-13 2016-01-13 A kind of integrated UVLED modules of the Self-concentration of inorganic encapsulated Expired - Fee Related CN105529390B (en)

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108257947A (en) * 2016-12-29 2018-07-06 晶能光电(江西)有限公司 A kind of UVLED area sources module
CN108933185B (en) * 2017-05-26 2021-01-05 黄国益 Support structure, light emitting device using the same, and method of processing the same
CN109860285B (en) * 2017-11-30 2021-05-11 株洲中车时代半导体有限公司 High power semiconductor element
CN111552038A (en) * 2019-02-12 2020-08-18 立诚光电股份有限公司 Laser direct forming optical device and process thereof
CN111379981A (en) * 2020-04-28 2020-07-07 东莞市索菲电子科技有限公司 Light-concentrating high-color-rendering-index high-brightness surface-mounted LED

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2013157152A (en) * 2012-01-27 2013-08-15 Asahi Kasei Corp Light guide plate, half slit sheet, and optical film
CN103325922A (en) * 2013-06-05 2013-09-25 广州市鸿利光电股份有限公司 LED encapsulating method
CN205335294U (en) * 2016-01-13 2016-06-22 深圳仁为光电有限公司 Inorganic encapsulation from integrated UVLED module of spotlight

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013157152A (en) * 2012-01-27 2013-08-15 Asahi Kasei Corp Light guide plate, half slit sheet, and optical film
CN103325922A (en) * 2013-06-05 2013-09-25 广州市鸿利光电股份有限公司 LED encapsulating method
CN205335294U (en) * 2016-01-13 2016-06-22 深圳仁为光电有限公司 Inorganic encapsulation from integrated UVLED module of spotlight

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