CN106058021A - Chip-scale package luminescence apparatus and manufacturing method thereof - Google Patents
Chip-scale package luminescence apparatus and manufacturing method thereof Download PDFInfo
- Publication number
- CN106058021A CN106058021A CN201610539943.0A CN201610539943A CN106058021A CN 106058021 A CN106058021 A CN 106058021A CN 201610539943 A CN201610539943 A CN 201610539943A CN 106058021 A CN106058021 A CN 106058021A
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- Prior art keywords
- chip
- luminescence
- emitting device
- primer
- wafer
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The invention discloses a chip-scale package luminescence apparatus and a manufacturing method thereof. The chip-scale package luminescence apparatus comprises a luminescence chip and a fluorescent glue layer whose five surfaces surrounds the luminescence chip, wherein the bottom of the luminescence chip is provided with electrodes and the bottom of the fluorescent glue layer and gaps between the electrodes are each provided with a primer layer. The manufacturing method of the chip-scale package luminescence apparatus comprises the following steps: 1, arranging luminescence chips on a support plate; 2, performing injection molding solidification formation outside the luminescence chips by use of a fluorescent glue mixed fluid to integrally form a solid module; 3, coating the bottom of the solid module with a primer to form a primer layer; and 4, removing the primer on the surfaces of the electrodes to expose the electrodes. According to the chip-scale package luminescence apparatus, the luminescence chip and the bottom of the fluorescent glue layer are provided with the primer layers, the upper portion of the luminescence chip, together with the surrounding fluorescent glue layer and the primer layers, forms a closed integral body wrapping the luminescence chip, the problem that the colloid of a conventional five-surface light-emitting luminescence apparatus falls easily is solved, such a structure obviously improves brightness of the chip-scale package luminescence apparatus, and the chip-scale package luminescence apparatus has the advantages of firm structure, little light decay, high brightness, high production yield rate and good heat dissipation performance.
Description
[technical field]
The present invention relates to lighting field, especially relate to a kind of wafer-level package light-emitting device and manufacture method thereof.
[background technology]
As depicted in figs. 1 and 2, it is by centrally located luminescence chip 110 and five for existing common core chip level light-emitting device
Bread encloses the fluorescent colloid 120 of chip and constitutes, and the feature of this structure is: light-emitting device can go out light in five faces；Centrally located
Bottom the electrode 130 of luminescence chip concordant with bottom fluorescent colloid 120.
But this light-emitting device of prior art and all there are problems in back segment application process: this luminous dress itself
The colloid put is limited with the bonding force of luminescence chip, and in use, it usually needs carry, keep in repair, cause this luminescence
The fluorescent colloid 120 of device easily separates with luminescence chip 110, causes light-emitting device to lose efficacy；Additionally, due to this light-emitting device
A spacer segment (GAP, usually 150～200um) is there is, when being welded in by this light-emitting device by solder in the middle of two electrodes
Time on substrate 140, exist between space 111, and fluorescent colloid 120 and substrate between GAP and the substrate of this light-emitting device
There is also space 121.Both spaces, result in following Railway Project: a. and pass through the light bottom colloid, at colloid and substrate
Between space back warp cross multiple reflections and refraction after, energy is significantly decayed, and causes light-emitting device overall brightness to reduce；B. due to
GAP spacing is the least, and the situation of short circuit easily occurs when welding in the space between GAP with substrate, this technique to back segment application
Require high, it is difficult to ensure yield and realize volume production；C. owing to there is space, the heat produced during light-emitting device work can only lead to
The electrode crossing luminescence chip conducts to substrate, and area of dissipation is greatly reduced, and heat dispersion is extremely restricted very much.
Therefore it provides a kind of stabilized structure, light decay are few, luminosity is high, produce yield height, the chip-scale of perfect heat-dissipating
Encapsulating light emitting device and manufacture method thereof are the most necessary.
[summary of the invention]
It is an object of the invention to provide a kind of luminosity height, produce yield height, the wafer-level package of perfect heat-dissipating
Light-emitting device and manufacture method thereof.
For realizing the object of the invention, it is provided that techniques below scheme:
The present invention provides a kind of wafer-level package light-emitting device, and it includes that luminescence chip, five bread enclose the glimmering of luminescence chip
Light glue-line, is provided with electrode bottom luminescence chip, the gap bottom fluorescent adhesive layer, between electrode is equipped with primer layer.The present invention
Wafer-level package light-emitting device is provided with primer layer bottom luminescence chip and fluorescent adhesive layer, in luminescence chip top and surrounding
Fluorescent adhesive layer and primer layer to define the Guan Bi of parcel luminescence chip overall, common five light-emitting device colloids easily take off
The problem fallen has been resolved, and this structure makes to be obviously improved in wafer-level package light-emitting device brightness of the present invention, the present invention
Stabilized structure, light decay are few, luminosity is high, produce yield height, perfect heat-dissipating.
Preferably, the electrode base of this luminescence chip is provided with metal level.
Preferably, this primer layer is white gummy solid.
Preferably, this primer layer uses reflectance dynamics high, bonding white gummy solid high, resistant to elevated temperatures.
Preferably, the metal level of this electrode base uses electric-conductivity heat-conductivity high, fine and close metal material.
The present invention also provides for a kind of manufacture method manufacturing wafer-level package light-emitting device described above, and it includes walking as follows
Rapid:
(1) luminescence chip is placed in support plate；
(2) outside luminescence chip, it is molded curing molding with fluorescent glue fluid-mixing, solid modules is integrally formed；
(3) bottom solid modules, coat primer, form primer layer；
(4) remove the primer of electrode surface, expose electrode.
The present invention relates to the manufacture method of a kind of wafer-level package light-emitting device, its stabilized structure, light decay are few, luminosity
High, production yield height, perfect heat-dissipating.This wafer-level package light-emitting device belongs to the solid-state illumination field of novel energy-saving environment-friendly,
Can be applicable to general illumination utensil, display, mobile phone flashlight etc..
Preferably, step (2) includes step:
(21), transparent fluid, fluorescent material mixing, stir under vacuum with deaeration machine, formed fluid-mixing；
(22), together with arranged luminescence chip, fluid-mixing is positioned in injection-moulding device intensification, cure under pressure becomes
Type, forms solid modules.
Preferably, between step (2) and step (3), step (20) is also included: on luminescence chip electrode, plate one layer of gold
When belonging to coating primer in layer, step (3), primer is concordant with metal level.
Preferably, step (4) uses buffing machine remove for primer, expose luminescence chip electrode.
Preferably, step (5) is also included: the solid modules comprising multiple luminescence chip step (4) handled well is cut
Become one single chip level encapsulating light emitting device.
Contrast prior art, the invention have the advantages that
Wafer-level package light-emitting device of the present invention is provided with primer layer, in luminescence bottom luminescence chip and fluorescent adhesive layer
The Guan Bi that the fluorescent adhesive layer of chip top and surrounding and primer layer define parcel luminescence chip is overall, common five light-emittings
Device colloid holds caducous problem and has been resolved, and this structure makes to have in wafer-level package light-emitting device brightness of the present invention bright
Aobvious lifting, present configuration is firm, light decay is few, luminosity is high, produce yield height, perfect heat-dissipating.Especially, have employed tool
Having the white glue of high bonding force, compare common five light-emitting devices, light-emitting device of the present invention has in brightness and substantially carries
Rise, the heat dispersion of light-emitting device of the present invention significantly improves, hot and humid under the conditions of aging 1000H luminous flux attenuation be less than
3%；
The present invention relates to the manufacture method of a kind of wafer-level package light-emitting device, its stabilized structure, light decay are few, luminosity
High, production yield height, perfect heat-dissipating.This wafer-level package light-emitting device belongs to the solid-state illumination field of novel energy-saving environment-friendly,
Can be applicable to general illumination utensil, display, mobile phone flashlight etc..
[accompanying drawing explanation]
Fig. 1 is the side view of existing light-emitting device；
Fig. 2 is the upward view of existing light-emitting device；
Fig. 3 is the side view of wafer-level package light-emitting device of the present invention；
Fig. 4 is the upward view of wafer-level package light-emitting device of the present invention；
Fig. 5 is the luminance contrast figure of wafer-level package light-emitting device of the present invention and prior art light-emitting device.
[detailed description of the invention]
Referring to Fig. 3 and Fig. 4, wafer-level package light-emitting device of the present invention includes that luminescence chip 210, five bread encloses luminous core
The fluorescent adhesive layer 220 of sheet, is provided with electrode 230 bottom luminescence chip, the gap bottom fluorescent adhesive layer 220, between electrode 230
(GAP) be equipped with primer layer 240, in the present embodiment, this primer layer 240 be reflectance dynamics high, bonding high, high temperature resistant (
Work under long-time hot conditions invariant color) white gummy solid.
Additionally, be additionally provided with electric-conductivity heat-conductivity high, fine and close metal level bottom this electrode 230.Characteristic to coated metal
Require: there is good electrical and thermal conductivity performance, densification.This metal level is to be welded in the characteristic bottom electrode 230, to application end solder
Require: suitable alloyed powder and scaling powder ratio, it is ensured that welding voidage≤10%.
Wafer-level package light-emitting device of the present invention is provided with primer layer, in luminescence bottom luminescence chip and fluorescent adhesive layer
The Guan Bi that the fluorescent adhesive layer of chip top and surrounding and primer layer define parcel luminescence chip is overall, common five light-emittings
Device colloid holds caducous problem and has been resolved, and this structure makes to have in wafer-level package light-emitting device brightness of the present invention bright
Aobvious lifting, present configuration is firm, light decay is few, luminosity is high, produce yield height, perfect heat-dissipating.
In the present embodiment, the manufacture method of wafer-level package light-emitting device of the present invention, it comprises the steps:
(100) it is placed on support plate by the most regularly arranged for multiple luminescence chips；
(200) outside luminescence chip, it is molded curing molding with fluorescent glue fluid-mixing, solid modules is integrally formed；
(300) on luminescence chip electrode, the metal level that the conductive and heat-conductive of one layer of certain thickness densification is good is plated, with this
Hide the electrode of luminescence chip；
(400) coating the primer of white gummy solid bottom solid modules, form primer layer, primer layer is put down with metal level
Together；
(500) use buffing machine to remove the primer for electrode surface, expose luminescence chip electrode；
(600) solid modules comprising multiple luminescence chip that step (500) is handled well is cut into one single chip level envelope
Dress light-emitting device.
Step (200) includes step:
(210), by transparent fluid, fluorescent material mixing, stir under vacuum with deaeration machine, form mixed flow
Body；
(220), together with arranged luminescence chip, fluid-mixing is positioned in injection-moulding device intensification, cure under pressure becomes
Type, forms solid modules.
Step (700) is also included: this wafer-level package light-emitting device is carried out polarity sign after step (600).
The present invention relates to the manufacture method of a kind of wafer-level package light-emitting device, its stabilized structure, light decay are few, luminosity
High, production yield height, perfect heat-dissipating.This wafer-level package light-emitting device belongs to the solid-state illumination field of novel energy-saving environment-friendly,
Can be applicable to general illumination utensil, display, mobile phone flashlight etc..
On support plate, two-sided tape it is pasted with in step (100).
Gluing machine is put into, in the solid modules bottom surface comprising luminescence chip by electroplating complete solid in step (400)
Brush certain thickness white glue, then the module being coated with white glue is put into baking box and dry, form primer layer.
Characteristic requirements to application end solder in step (300): suitable alloyed powder and scaling powder ratio, it is ensured that welding
Voidage≤10%.
The foregoing is only presently preferred embodiments of the present invention, protection scope of the present invention is not limited thereto, any based on
Within equivalent transformation in technical solution of the present invention belongs to scope.
Claims (10)
1. a wafer-level package light-emitting device, it includes that luminescence chip, five bread enclose the fluorescent adhesive layer of luminescence chip, luminous core
Electrode it is provided with, it is characterised in that the gap bottom fluorescent adhesive layer, between electrode is equipped with primer layer bottom sheet.
2. wafer-level package light-emitting device as claimed in claim 1, it is characterised in that the electrode base of this luminescence chip is provided with
Metal level.
3. wafer-level package light-emitting device as claimed in claim 1 or 2, it is characterised in that this primer layer is that white gum is solid
Body.
4. wafer-level package light-emitting device as claimed in claim 3, it is characterised in that this primer layer uses reflectance high, viscous
Relay degree white gummy solid high, resistant to elevated temperatures.
5. wafer-level package light-emitting device as claimed in claim 2, it is characterised in that the metal level of this electrode base uses height
Electrical and thermal conductivity, fine and close metal material.
6. manufacturing a manufacture method for wafer-level package light-emitting device as described in any one of Claims 1 to 5, its feature exists
In,
(1) luminescence chip is placed in support plate；
(2) outside luminescence chip, it is molded curing molding with fluorescent glue fluid-mixing, solid modules is integrally formed；
(3) bottom solid modules, coat primer, form primer layer；
(4) remove the primer of electrode surface, expose electrode.
7. the manufacture method of wafer-level package light-emitting device as claimed in claim 6, it is characterised in that step (2) includes
Step:
(21), transparent fluid, fluorescent material mixing, stir under vacuum with deaeration machine, formed fluid-mixing；
(22), fluid-mixing is positioned in injection-moulding device intensification, cure under pressure molding, shape together with arranged luminescence chip
Become solid modules.
8. the manufacture method of wafer-level package light-emitting device as claimed in claim 6, it is characterised in that in step (2) and step
Suddenly step (20) is also included between (3): when plating coating primer in layer of metal layer, step (3) on luminescence chip electrode, primer
Concordant with metal level.
9. the manufacture method of wafer-level package light-emitting device as claimed in claim 8, it is characterised in that use in step (4)
Buffing machine removes for primer, exposes luminescence chip electrode.
10. the manufacture method of wafer-level package light-emitting device as claimed in claim 6, it is characterised in that also include step
(5): the solid modules comprising multiple luminescence chip that step (4) is handled well is cut into one single chip level encapsulating light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610539943.0A CN106058021A (en) | 2016-07-08 | 2016-07-08 | Chip-scale package luminescence apparatus and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610539943.0A CN106058021A (en) | 2016-07-08 | 2016-07-08 | Chip-scale package luminescence apparatus and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN106058021A true CN106058021A (en) | 2016-10-26 |
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ID=57186128
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610539943.0A Pending CN106058021A (en) | 2016-07-08 | 2016-07-08 | Chip-scale package luminescence apparatus and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400218A (en) * | 2018-01-22 | 2018-08-14 | 东莞中之光电股份有限公司 | A kind of LED encapsulation method based on CSP patterns |
| CN109728153A (en) * | 2017-10-30 | 2019-05-07 | 深圳市聚飞光电股份有限公司 | Wafer-level package LED light source and preparation method thereof |
| CN111293199A (en) * | 2017-01-20 | 2020-06-16 | 光宝光电(常州)有限公司 | Light emitting diode packaging structure and light emitting diode packaging module |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012138454A (en) * | 2010-12-27 | 2012-07-19 | Citizen Holdings Co Ltd | Semiconductor light-emitting device and manufacturing method of the same |
| CN102884645A (en) * | 2010-01-29 | 2013-01-16 | 西铁城电子株式会社 | Method for producing light-emitting device and light emitting device |
| CN203774363U (en) * | 2012-11-12 | 2014-08-13 | 西铁城控股株式会社 | Semiconductor light-emitting device |
| CN105449071A (en) * | 2015-12-31 | 2016-03-30 | 广州市鸿利光电股份有限公司 | Method for molding chip scale package (CSP) LED (Light-Emitting Diode) and CSP LED |
| CN105449080A (en) * | 2015-12-31 | 2016-03-30 | 广州市鸿利光电股份有限公司 | Method for molding CSP (Chip Scale Package) LED (Light-Emitting Diode) with face-up chip, method for molding face-down chip and CSP LED |
| CN205960028U (en) * | 2016-07-08 | 2017-02-15 | 深圳市兆驰节能照明股份有限公司 | Chip scale package illuminator |
-
2016
- 2016-07-08 CN CN201610539943.0A patent/CN106058021A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102884645A (en) * | 2010-01-29 | 2013-01-16 | 西铁城电子株式会社 | Method for producing light-emitting device and light emitting device |
| JP2012138454A (en) * | 2010-12-27 | 2012-07-19 | Citizen Holdings Co Ltd | Semiconductor light-emitting device and manufacturing method of the same |
| CN203774363U (en) * | 2012-11-12 | 2014-08-13 | 西铁城控股株式会社 | Semiconductor light-emitting device |
| CN105449071A (en) * | 2015-12-31 | 2016-03-30 | 广州市鸿利光电股份有限公司 | Method for molding chip scale package (CSP) LED (Light-Emitting Diode) and CSP LED |
| CN105449080A (en) * | 2015-12-31 | 2016-03-30 | 广州市鸿利光电股份有限公司 | Method for molding CSP (Chip Scale Package) LED (Light-Emitting Diode) with face-up chip, method for molding face-down chip and CSP LED |
| CN205960028U (en) * | 2016-07-08 | 2017-02-15 | 深圳市兆驰节能照明股份有限公司 | Chip scale package illuminator |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111293199A (en) * | 2017-01-20 | 2020-06-16 | 光宝光电(常州)有限公司 | Light emitting diode packaging structure and light emitting diode packaging module |
| CN109728153A (en) * | 2017-10-30 | 2019-05-07 | 深圳市聚飞光电股份有限公司 | Wafer-level package LED light source and preparation method thereof |
| CN108400218A (en) * | 2018-01-22 | 2018-08-14 | 东莞中之光电股份有限公司 | A kind of LED encapsulation method based on CSP patterns |
| CN108400218B (en) * | 2018-01-22 | 2019-08-23 | 东莞中之光电股份有限公司 | A kind of LED encapsulation method based on CSP pattern |
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Application publication date: 20161026 |