CN101452986A - Encapsulation structure and method for white light emitting diode device - Google Patents
Encapsulation structure and method for white light emitting diode device Download PDFInfo
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- CN101452986A CN101452986A CNA2008102207025A CN200810220702A CN101452986A CN 101452986 A CN101452986 A CN 101452986A CN A2008102207025 A CNA2008102207025 A CN A2008102207025A CN 200810220702 A CN200810220702 A CN 200810220702A CN 101452986 A CN101452986 A CN 101452986A
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000005538 encapsulation Methods 0.000 title claims description 95
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000000741 silica gel Substances 0.000 claims abstract description 48
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 48
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000499 gel Substances 0.000 claims abstract description 29
- 238000004806 packaging method and process Methods 0.000 claims abstract description 28
- 239000000178 monomer Substances 0.000 claims description 52
- 239000000084 colloidal system Substances 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 11
- 238000012856 packing Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 4
- 239000002356 single layer Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention provides a structure and a method for packaging white-light LED devices. The structure mainly comprises an LED chip, a packaging tube shell, packaging silica gel and phosphor gel. The structure is characterized in that the LED chip is pasted in the packaging tube shell; the LED chip is covered and packaged in the packaging tube shell by the packaging silica gel and the phosphor gel; the packaging silica gel is in a lens shape; the packaging tube shell consists of a plurality of packaging single-bodies; the periphery of each packaging single-body is provided with a convex strip or a groove; and the packaging silica gel and a phosphor layer are made into a monolayer or multilayer packaging body through the structural shape of the packaging single-bodies. The invention has the advantages of utilizing the own surface tension of the silica gel and the phosphor layer, limiting the own flowing of the silica gel and the phosphor layer through the structure on the packaging tube shell, forming the packaging body of a lens and the phosphor layer of which the surface shape meets design requirements, reducing cost and improving product quality.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor device, particularly a kind of encapsulating structure of white light emitting diode device and method.
Background technology
Light-emitting diode (LED) is a kind of electroluminescent device that utilizes semiconductor fabrication processing, and its luminescence mechanism is to utilize the composite action in electronics and hole to produce photon.This composite action in theory can be near 100% quantum efficiency under electric current that continues and stable driven.The mode that this electricity injects can also be avoided big Stokes shift, thereby LED has the luminous efficiency height, and color rendering is good, and power consumption is few, energy-conserving and environment-protective, security reliability height, the advantage of long service life.
Since first blue-light LED chip succeeded in developing, mainly contain two kinds of technology of obtaining white light LEDs at present, a kind of is to utilize high brightness InGaN blue chip to excite yttrium aluminium garnet fluorescent powder (YAG:Ce
3+) obtain the technology of white light LEDs, a kind of is to utilize InGaN ultraviolet chip to excite the RGB three primary colors fluorescent powder to obtain the technology of white light LEDs.Wherein the mode of blue-ray LED+yellow fluorescent powder develops very rapidly because technology is simple, cost of manufacture is low, and technical merit improves constantly, and has occurred the white light LEDs of 100lm/W on the market.Based on the semiconductor lighting of high-power and high-luminance white light LEDs, be about to replace incandescent and fluorescent lamp, become the 4th generation lighting source.
In the high-brightness white-light LED field, general encapsulating structure and the method for preparation LED package module has two kinds at present, and a kind of is after chip surface has been coated with fluorescent material, charges into silica gel in the space of mode between chip and covering lens or mould by embedding; Another kind of mode is after chip surface has been coated with fluorescent material, fills with silica gel in the cup bowl, flattens silica gel with the covering lens.In the dual mode, covering lens and mould all must prepare earlier, and the covering lens are also made with mould.Therefore, in two kinds of production technologies, inevitably can in production cost, add die cost.In addition, the surface of mould can not be definitely smooth, and also can there be defective in the covering lens surface that manufactures.Mould is that conveniently stripped other chemicals such as release agent that add also can be introduced impurity in silica gel; The adsorbed particulate of die surface also can remain in the surface of covering lens.Blemish that these are residual and impurity can further expand and introduce the instability factor of the acceleration component failure such as moisture in embedding and use.
Summary of the invention
The encapsulating structure and the method that the present invention is directed to traditional white light emitting diode device provide a kind of encapsulating structure and method of not having the white light emitting diode device of mold manufacturing, utilize the surface tension of silica gel and phosphor powder layer self, limit flowing of silica gel and phosphor powder layer self by the structure on the encapsulation shell, possess the lens of designing requirement, the packaging body of phosphor powder layer thereby form surface configuration.The present invention aims to provide a kind of white light emitting diode manufacturing process of not having mold.
Encapsulating structure of the present invention mainly comprises: light-emitting diode chip for backlight unit, the encapsulation shell, encapsulation silica gel and phosphor gel, it is characterized in that light-emitting diode chip for backlight unit is mounted in the encapsulation shell, packed silica gel of light-emitting diode chip for backlight unit and phosphor gel coat and are encapsulated in the encapsulation shell, outermost layer encapsulation silica gel is lens shape, the encapsulation shell is plate shaped or the structure of band reflector, comprise one or several encapsulation monomers in the structure of encapsulation shell, thereby the shape of encapsulation silica gel and the packed monomer of phosphor powder layer is prepared into the single or multiple lift packaging body.The encapsulation monomer is the raised line or the groove of the ring-type at center with the chip, and the shape of ring is square circular or regular polygon, and each encapsulation monomer can be in the same plane or on Different Plane.Raised line shape encapsulation monomer is limited in silica gel or phosphor gel in the lateral surface, and as shown in Figure 1, groove shaped encapsulation monomer is limited in silica gel or phosphor gel in the medial surface, as shown in Figure 2.Described encapsulation shell is the plastic case of ceramic cartridge or Can or band metal base.It is synthetic that described phosphor gel is used for white light.
Method for packing of the present invention comprises following steps:
A) by spot gluing equipment will encapsulate silica gel or phosphor gel point be coated in the package tube shell in, make colloid be coated with full each encapsulation monomer and distribute uniformly;
B) the glue amount of control spot printing makes colloid possess the surface configuration of designing requirement when reaching stable state;
C) heat up rapidly precuring a period of time, make the surface of colloid form the film that one deck solidifies, colloid inside is semi-solid preparation or uncured;
D) number of plies according to packaging body repeats above step until the spot printing of finishing each layer packaging body and precuring;
E) heat up, whole packaging is carried out full solidification;
Encapsulating structure of the present invention and method for packing are applicable to single-chip or multi-core encapsulation module, and the distribution of multicore sheet chips can be the form of array or other regular distribution.
Description of drawings
Fig. 1 is provided with the structural representation of spot printing silica gel on the shell of raised line shape encapsulation monomer or phosphor gel;
Fig. 2 is provided with the structural representation of spot printing silica gel on the shell of groove shaped encapsulation monomer or phosphor gel;
The structural representation of Fig. 3 embodiment of the invention 1;
The structural representation of Fig. 4 embodiment of the invention 2;
The structural representation of Fig. 5 embodiment of the invention 3;
The structural representation of Fig. 6 embodiment of the invention 4;
The structural representation of Fig. 7 embodiment of the invention 5.
Surface, 10 light-emitting diode chip for backlight unit, 11 raised line shapes encapsulation monomer, 12 groove shaped encapsulation monomer, 13 reflectors, the encapsulation silica gel of 14 ring-types, inside groove, the inside groove of 16 openings of 15 openings of the medial surface of the end face of 1 encapsulation shell, 2 silica gel, 3 phosphor gel, 4 encapsulation monomers, 5 encapsulation monomers, the bottom surface of 6 encapsulation monomers, 7 encapsulation monomers, lateral surface, 9 silica gel or the phosphor gel of 8 encapsulation monomers
Embodiment
Embodiment one
Further specify embodiments of the invention below in conjunction with accompanying drawing: referring to Fig. 3, the encapsulating structure of white light emitting diode device is made up of light-emitting diode chip for backlight unit 10, encapsulation shell 1, encapsulation silica gel 2, phosphor gel 3.Light-emitting diode chip for backlight unit 9 is mounted in the encapsulation shell 1.Encapsulation shell 1 is plate shaped or the structure of band reflector, is plate shaped in the present embodiment.Comprise one or several encapsulation monomers 4 in the structure of encapsulation shell 1, comprise a plurality of encapsulation monomers 4 in the present embodiment.Encapsulation monomer 4 is to be the raised line shape encapsulation monomer 11 or the groove shaped encapsulation monomer 12 of the ring-type at center with chip 10, the shape of ring is square circular or regular polygon, each encapsulation monomer 4 can be in the same plane or on Different Plane, a plurality of encapsulation monomers 4 in the present embodiment encapsulate monomer 11 for raised line shape.Encapsulation monomer 4 can be graphical circuit layer or adopt precision cutting or fine structure that mould manufacturing or stamped or laser manufacturing process.Encapsulation shell 1 is the plastic case of ceramic cartridge or Can or band metal base.Ceramic cartridge can be multi-layer sintering, the ceramic wafer of imbedding circuit and protection device arranged.Ceramic material is Al
2O
3Or AlN or AlSiC.
The medial surface 7 of each encapsulation monomer 4 is vertical plane in the present embodiment, and this face also can be plane or 30 °～89 ° the clinoplain or the folding face of cambered surface or parabolic or other regular shapes.Lateral surface 8 is cambered surface in the present embodiment, and lateral surface 8 also can be vertical plane or 30 °～89 ° the clinoplain or the folding face of cambered surface or parabolic or other regular shapes.The end face 5 of raised line shape encapsulation monomer 11 is horizontal.The height of each raised line shape encapsulation monomer 11 is identical with width in the present embodiment, and the height of raised line shape encapsulation monomer 11 also can be different with width.The at first packed silica gel 2 of light-emitting diode chip for backlight unit 10 coats, and is coated by phosphor gel 3 again, is coated by multilayer encapsulation silica gel 2 again.Encapsulation silica gel 2 forms lens shape, and the light-emitting diode chip for backlight unit 10 in the present embodiment also can be positive cartridge chip of vertical electrode or flip-chip for the positive cartridge chip of plane electrode.The bottom of positive cartridge chip of plane electrode and the positive cartridge chip of vertical electrode adopts the mode of high heat conduction scolder or eutectic weldering or laser welding to be mounted in the encapsulation shell.Flip-chip adopts solder-ball flip in the encapsulation shell.
Method for packing comprises following steps:
A) by spot gluing equipment will encapsulate silica gel or phosphor gel point be coated in the package tube shell in, make colloid be coated with full each encapsulation monomer and distribute uniformly;
B) the glue amount of control spot printing makes colloid possess the surface configuration of designing requirement when reaching stable state;
C) heat up rapidly precuring a period of time, make the surface of colloid form the film that one deck solidifies, colloid inside is semi-solid preparation or uncured;
D) number of plies according to packaging body repeats above step until the spot printing of finishing each layer packaging body and precuring;
E) heat up, whole packaging is carried out full solidification;
Method for packing is based on the physicochemical properties of encapsulation silica gel 2 and phosphor gel 3, utilize encapsulation silica gel 2 and phosphor gel 3 in flow process, to be subjected to capillary the influence, by the raised line shape encapsulation monomer 11 restriction encapsulation silica gel 2 of encapsulation shell 1 or flowing of phosphor gel 3, possesses the packaging body that surface configuration adheres to specification thereby form, when silica gel 2 or phosphor gel 3 flow to the influence that the lateral surface 8 of raised line shape encapsulation monomer 11 is soaked into the angle, silica gel 2 or phosphor gel 3 can stop to flow.When continuing to increase some glue amount, the surface 8 of silica gel 2 or phosphor gel 3 can change under the acting in conjunction of surface tension and gravity, thereby can generate the surface 9 that meets the demands by control point glue amount.
Described light-emitting diode chip for backlight unit comprises blue LED chip and ultraviolet light-emitting diodes chip, and described fluorescent material adopts different fluorescent material according to chip type.For blue LED chip fluorescent material is gold-tinted fluorescent material or gold-tinted+red light fluorescent powder or gold-tinted+ruddiness+green light fluorescent powder or ruddiness+green light fluorescent powder.For the ultraviolet light-emitting diodes chip, fluorescent material is red-green-blue fluorescent material.
Described encapsulating structure and method for packing are applicable to single-chip or multi-core encapsulation module, and the distribution of multicore sheet chips can be the form of array or other regular distribution.
Embodiment two
Different is that encapsulation monomer 4 encapsulates monomer 12 for groove shaped for embodiment two and embodiment one, the at first packed silica gel 2 of light-emitting diode chip for backlight unit 10 coats, and then coated by phosphor gel 3, groove shaped encapsulation monomer 12 is to adopt precision cutting or mould manufacturing or stamped or laser manufacturing to be processed into.The lateral surface 8 of each groove shaped encapsulation monomer 12 is vertical plane in the present embodiment, and medial surface 7 is a cambered surface in the present embodiment, referring to Fig. 4.
Embodiment three
Different is that encapsulation shell 1 has reflector 13 for embodiment three and embodiment one, comprises raised line shape encapsulation monomer 11 and groove shaped encapsulation monomer 12 on the encapsulation shell 1 simultaneously, referring to Fig. 5.
Embodiment four
Embodiment four and embodiment one one deck encapsulation monomer 4 that different is on the encapsulation shell 1 is used to form the encapsulation silica gel 14 of a ring-type, after these ring-type encapsulation silica gel 14 precuring, in this ring, be coated with full phosphor gel 3 again, the medial surface 7 of the encapsulation monomer 4 of the outer shroud of encapsulation shell 1 be that the inside groove of opening is rolled over face 15, impact and deformation ability to strengthen outermost encapsulation silica gel 2 lens opposing, referring to Fig. 6.
Embodiment five
The encapsulation shell 1 of embodiment five and embodiment one different is embodiment five is provided with a plurality of light-emitting diode chip for backlight unit 10, each light-emitting diode chip for backlight unit 10 is coated by phosphor gel 3 earlier, often the packed again silica gel 2 of a light-emitting diode chip for backlight unit 10 coats then, the medial surface 7 of the encapsulation monomer 4 of the outer shroud of every group of light-emitting diode chip for backlight unit 10 is the inside groove folding face 16 of opening, impact and deformation ability to strengthen outermost encapsulation silica gel 2 lens opposing, referring to Fig. 7.
Claims (6)
1, the encapsulating structure of white light emitting diode device, mainly comprise: light-emitting diode chip for backlight unit, the encapsulation shell, encapsulation silica gel and phosphor gel, it is characterized in that light-emitting diode chip for backlight unit is mounted in the encapsulation shell, packed silica gel of light-emitting diode chip for backlight unit and phosphor gel coat and are encapsulated in the encapsulation shell, outermost layer encapsulation silica gel is lens shape, the encapsulation shell is plate shaped or the structure of band reflector, comprise one or several encapsulation monomers in the structure of encapsulation shell, thereby the shape of encapsulation silica gel and the packed monomer of phosphor powder layer is prepared into the single or multiple lift packaging body.
2, the encapsulating structure of white light emitting diode device according to claim 1, it is characterized in that described encapsulation monomer is the raised line or the groove of the ring-type at center with the chip, the shape of ring is square circular or regular polygon, and each encapsulation monomer can be in the same plane or on Different Plane.
3, the encapsulating structure of white light emitting diode device according to claim 1 and 2, the structural parameters that it is characterized in that the encapsulation monomer of described raised line shape comprise height, width, end face, medial surface, lateral surface, the structural parameters of the encapsulation monomer of groove shaped comprise the degree of depth, width, bottom surface, medial surface, lateral surface, and the structural parameters of each encapsulation monomer can all identical or part difference or different fully.Raised line shape encapsulation monomer is limited in silica gel or phosphor gel in the lateral surface, and groove shaped encapsulation monomer is limited in silica gel or phosphor gel in the medial surface.
4, according to the encapsulating structure of claim 1 or 2 or 3 described white light emitting diodes, the end face or the bottom surface that it is characterized in that described encapsulation monomer are horizontal, and medial surface and lateral surface are vertical plane or have 30 °～89 ° clinoplain or cambered surface or parabolic or have a folding face of regular shape.
5, the encapsulating structure of white light emitting diode device according to claim 1 is characterized in that described encapsulation shell is the plastic case of ceramic cartridge or Can or band metal base.
6, a kind of method for packing of white light emitting diode device encapsulating structure as claimed in claim 1 is characterized in that method for packing comprises following steps:
A) will encapsulate silica gel by spot gluing equipment or the phosphor gel point is coated in the package tube shell, and make colloid be coated with full each encapsulation monomer and distribute uniformly;
B) the glue amount of control spot printing makes colloid possess the surface configuration of designing requirement when reaching stable state;
C) heat up rapidly precuring a period of time, make the surface of colloid form the film that one deck solidifies, colloid inside is semi-solid preparation or uncured;
D) number of plies according to packaging body repeats above step until the spot printing of finishing each layer packaging body and precuring;
E) heat up, whole packaging is carried out full solidification.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008102207025A CN101452986A (en) | 2008-12-31 | 2008-12-31 | Encapsulation structure and method for white light emitting diode device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008102207025A CN101452986A (en) | 2008-12-31 | 2008-12-31 | Encapsulation structure and method for white light emitting diode device |
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|---|---|
| CN101452986A true CN101452986A (en) | 2009-06-10 |
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ID=40735100
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| CNA2008102207025A Pending CN101452986A (en) | 2008-12-31 | 2008-12-31 | Encapsulation structure and method for white light emitting diode device |
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- 2008-12-31 CN CNA2008102207025A patent/CN101452986A/en active Pending
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