CN102290504B - Chip-on-board (COB) packaged light-emitting diode (LED) module based on high-thermal-conductivity substrate flip-chip bonding technique and production method - Google Patents
Chip-on-board (COB) packaged light-emitting diode (LED) module based on high-thermal-conductivity substrate flip-chip bonding technique and production method Download PDFInfo
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- CN102290504B CN102290504B CN201110264649.0A CN201110264649A CN102290504B CN 102290504 B CN102290504 B CN 102290504B CN 201110264649 A CN201110264649 A CN 201110264649A CN 102290504 B CN102290504 B CN 102290504B
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Abstract
The invention discloses a chip-on-board (COB) packaged light-emitting diode (LED) module based on a high-thermal-conductivity substrate flip-chip bonding technique and a production method. A high-thermal-conductivity metal-base copper-clad substrate, an organic resin-base copper-clad substrate, a high-temperature-resistant gas filler flip-chip bonding technique and a multi-chip-on-board packaging method are adopted. The tops of LED modularized light sources are directly packaged on an LED chip the substrate and are fixedly sealed to form different circular-arch-shaped lens protection covers to greatly improve the light emitting efficiency. Therefore, an LED modularized light source module which has an extremely high power, an extremely high brightness and an extremely small volume can be produced.
Description
Technical field
The present invention relates to LED module light source field.
Background technology
The current encapsulation process to LED chip is to adopt welding wire welding, and LED chip face-down bonding technique is also rested in scientific research institutions laboratory at present substantially, has a lot of volume production mounting process problems, and volume production does not move towards the industrialization.Inverse bonding packing technique is to develop on the basis of Bonding, and it can solve some defect that current other all kinds of packaging technologies exist.The main feature of face-down bonding technique is that technique is simple, joint efficiency is high, good reliability, and is a kind of leadless environment-friendly green welding, is extremely potential a kind of novel process in following LED chip encapsulation field.Chip structure that at present face-down bonding technique adopts is unstable, mounting process is immature, and real estate top electrode and wiring welding are built on the sand, flip-chip Welding all becomes the key problem in technology that needs solution.
Conventionally the substrate insulating layer of LED module light source all adopts polymeric resin; there is high-insulativity; but can not make substrate heat radiation; and the protective cover of LED chip outer enclosure is all flat cover; chip refractive index n=2～4 of large power white light LED; far above the encapsulating material refractive index that plays lensing, the refractive index of general epoxy resin encapsulating material is about 1.4～1.5.Therefore, during through encapsulating material, there is total reflection effect in the two interface in the light sending when LED chip, causes approximately 50% light reflection to return chip internal, cannot effectively launch, and greatly lowers luminous efficiency, reduced the output of luminous flux.
Summary of the invention
The invention provides COB packaging LED module and production method based on high thermal conductive substrate face-down bonding technique, be by high thermal conductive substrate selection and processing, LED chip face-down bonding technique, a high temperature resistant COB encapsulation technology and package lens optical optimization technology entirety that organically permeates, produce compact conformation, power is large, brightness is high LED module light source.
The production method of the COB packaging LED module based on high thermal conductive substrate face-down bonding technique, comprises step:
A, making high thermal conductive substrate, described high thermal conductive substrate comprises Metal Substrate organic resin copper-clad base plate, insulating medium layer and electrodeposited copper foil layer from top to bottom, is mixed with the silicon class medium filler of heat conduction in insulating medium layer;
B, on electrodeposited copper foil layer, make multiple bump electrodes, described bump electrode is electrically connected with electrolytic copper foil wiring; Again by face-down bonding technology by LED chip working face down, with the multiple bump electrode Direct Bonding on described high thermal conductive substrate; Bonding material is not metal lead wire or carrier band or solder or organic conductive polymer, but directly by electromagnetic equipment, produces a high-intensity magnetic field, the Direct Bonding under magnetic fields of the molecule between bump electrode and the working face of LED chip;
C, at the light source top of multiple LED chips, adopt optical grade silicones protection glue that multiple LED chips are directly encapsulated on high thermal conductive substrate, sealing becomes the lens protective cover of dome shape, is finally combined into an overall LED light source module.
Step B specifically comprises, on the electrolytic copper foil wiring layer of described high thermal conductive substrate, is provided with multiple bump electrodes, and the working face of LED chip is put into a high-intensity magnetic field down, utilizes in high-intensity magnetic field molecular separating force by working face and bump electrode Direct Bonding;
Adopt many glasss of integrated form COB encapsulation technologies, be about to carry out seamless encapsulation in recessed cup that each LED chip is placed on coupling, avoided light luminous between adjacent LED chip to disturb.Adopt this innovation structure of recessed cup, avoided conventional COB encapsulation because interference of light effect reduces luminous flux output, cause luminance low.Described recessed wall of cup is vertical wall of cup or for outward-dipping wall of cup, and the opaque or inwall of wall of cup scribbles reflectorized material.
Lens protective cover profile in multiple LED chip light source top encapsulation is hemisphere or circular arc, by cooperation, adjusts recessed wall of cup gradient, controls LED chip rising angle, finally make LED light source module rising angle be in 60 °～120 ° any one.
The present invention also provides a kind of COB packaging LED module based on high thermal conductive substrate face-down bonding technique, comprise high thermal conductive substrate and LED chip, described high thermal conductive substrate comprises Metal Substrate organic resin copper-clad base plate, insulating medium layer and electrodeposited copper foil layer from top to bottom, is mixed with the silicon class medium filler of heat conduction in insulating medium layer; On described high thermal conductive substrate, by face-down bonding technical battery, be connected to LED chip, on the electrodeposited copper foil layer of described high thermal conductive substrate, have the working face Direct Bonding of bump electrode and described LED chip; At multiple LED chip light sources top, adopt optical grade silicones protection rubber seal dress, sealing becomes the lens protective cover of a dome shape.
As one, improve, also include recessed cup, by many glasss of integrated form COB packaging technologies, each LED chip is arranged in the recessed cup of coupling and carries out seamless encapsulation.Described recessed wall of cup is vertical wall of cup or for outward-dipping wall of cup, and the opaque or inwall of wall of cup scribbles reflectorized material.
In described Metal Substrate organic resin copper-clad base plate bottom surface, be also coated with one deck PI resin molding.Lens protective cover profile in multiple LED chip light source top encapsulation is hemisphere or circular arc.
The present invention has following technical characterstic and advantage:
Adopt the high thermal conductive substrate of two-sided all heat conduction, high temperature resistant joint filling face-down bonding technique, many glasss of integrated form COB packaged types; and at LED module light source top, adopt high transparent silicon resin protection glue to be directly encapsulated on LED chip substrate; sealing becomes the lens protective cover of different dome shape; reduce reflectivity; greatly improve luminous efficiency; produce like this LED light source module that power is very big, brightness is high, volume is minimum, substrate thermal conductivity improves 3 times, has extended product useful life.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the production method flow chart that the present invention is based on the COB packaging LED module of high thermal conductive substrate face-down bonding technique.
Fig. 2 is the structural representation that the present invention is based on the COB packaging LED module of high thermal conductive substrate face-down bonding technique.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, the embodiment of the present invention provides a kind of production method of the COB packaging LED module based on high thermal conductive substrate face-down bonding technique, comprising:
Steps A, making high thermal conductive substrate, described high thermal conductive substrate comprises Metal Substrate organic resin copper-clad base plate, insulating medium layer and electrodeposited copper foil layer from top to bottom, is mixed with the silicon class medium filler of heat conduction in insulating medium layer.
Described high thermal conductive substrate adopts Metal Substrate copper-clad base plate or the organic resin base copper-clad base plate of high heat conduction, structure is metal level (can adopt the sheet metals such as aluminium, aluminium alloy, copper, iron, molybdenum, silicon steel), insulating medium layer (can adopt modified epoxy, PI resin, PPO resin etc.) and Copper Foil (can adopt electrolytic copper foil, rolled copper foil etc.) the compounded metal-based copper-clad plate of the Trinity, and the special printed circuit board of the one of making printed circuit on metal-based copper-clad plate, it is called as metal base printed circuit board.Its thermal diffusivity depends primarily on the metal species of metal base, but also relevant with its thickness of insulating layer, heat conductivity etc.In order to improve the heat conductivity of metal base printed circuit board, the inventive method adds people's heat-conducting type filler in insulating barrier, the electronic component heat being connected on Copper Foil can be conducted and dispels the heat to metal level fast.The present invention selects the reason of silicon class medium filler, the cost ratio silicon material that is mainly alumina packing exceeds approximately 10 times, and employing can get a promotion with silicon medium in processing plasticity, the Metal Substrate copper-clad base plate of this spline structure and organic resin base copper-clad base plate, there is high reliability, low cost feature, than existing substrate, conduct heat fast 3 times.
Step B, on electrodeposited copper foil layer, utilize face-down bonding technique before operation make multiple bump electrodes, described bump electrode is electrically connected with electrolytic copper foil wiring; Again by face-down bonding technology by LED chip working face down, with the multiple bump electrode Direct Bonding on described high thermal conductive substrate; Bonding material is not metal lead wire or carrier band or solder or organic conductive polymer, but directly by electromagnetic equipment, produces a high-intensity magnetic field, the Direct Bonding under magnetic fields of the molecule between bump electrode and the working face of LED chip.Multiple spherical bump electrodes will guarantee the consistency of balling-up size, shape.
LED chip face-down bonding technology is a kind of novel micro-packaging technology, with respect to traditional Bonding, compare with carrier band automatic welding interconnection technique, flip-chip solder technology bonding wire of the present invention is short, salient point directly welds with printed substrate or other substrate, lead-in inductance is little, between signal, crosstalk little, signal transmission delay is short, good electrical property, that in interconnection, time delay is the shortest, a kind of interconnecting method of ghost effect minimum, can realize the highest packing density, the advantages such as the highest I/O digital camera and lower cost, face-down bonding technology of the present invention, by the chip that is shaped with bump electrode on working face (in active area) down, with substrate wiring layer Direct Bonding, greatly reduced connection operation, do not adopt bonding material yet, provide cost savings.
Also adopt many glasss of integrated form COB encapsulation technologies, be about to carry out seamless encapsulation in recessed cup that each LED chip is placed on coupling, avoided light luminous between adjacent LED chip to disturb.Adopt this innovation structure of recessed cup, avoided conventional COB encapsulation because interference of light effect reduces luminous flux output, cause luminance low.Described recessed wall of cup is vertical wall of cup or for outward-dipping wall of cup, and the opaque or inwall of wall of cup scribbles reflectorized material, and concentrated light is upwards launched, and improves brightness.
Lens protective cover profile in multiple LED chip light source top encapsulation is hemisphere or circular arc, by cooperation, adjusts recessed wall of cup gradient, controls LED chip rising angle, finally make LED light source module rising angle be in 60 °～120 ° any one.Improve like this luminous flux, can also conveniently realize the luminous encapsulation of LED face, increase the power of single source, avoid to greatest extent dazzle, hot spot and avoid reducing light efficiency because of interference of light effect.
Step C, at the light source top of multiple LED chips, adopt optical grade silicones protection glue that multiple LED chips are directly encapsulated on high thermal conductive substrate, sealing becomes the lens protective cover of dome shape, is finally combined into an overall LED light source module.
The present invention adopts its top sphere lens design innovatively, improves LED light extraction efficiency, because light is also from optically denser medium to optically thinner medium when encapsulating material reflects air, so equally also there is total reflection phenomenon.If light distribution and rising angle are had to requirement, that will rethink, different lens shapes and encapsulation shape can obtain different results.The large rising angle of lens angle is large in general, and the little rising angle of lens angle is little.In the lens protective cover profile of multiple LED chip light source top encapsulation, be hemisphere or be the dome-shaped of any one rising angle in 120 °, 90 °, 60 °.Lens flare through optical design will be very even, greatly improved luminous efficiency, and brightness has improved 10%.
As shown in Figure 2, the embodiment of the present invention provides a kind of COB packaging LED module based on high thermal conductive substrate face-down bonding technique, comprise high thermal conductive substrate 1 and LED chip 2, described high thermal conductive substrate comprises Metal Substrate organic resin copper-clad base plate 12, insulating medium layer 13 and electrodeposited copper foil layer 14 from top to bottom, in insulating medium layer, be mixed with the silicon class medium filler of heat conduction, in described Metal Substrate organic resin copper-clad base plate bottom surface, be also coated with one deck PI resin molding 11.On described high thermal conductive substrate, by face-down bonding technical battery, be connected to LED chip, on the electrodeposited copper foil layer of described high thermal conductive substrate, have working face 21 Direct Bonding of bump electrode 3 (can use little gold goal) and described LED chip; At multiple LED chip light sources top, adopt optical grade silicones protection rubber seal dress, sealing becomes the lens protective cover 4 of a dome shape.
As one, improve, also include recessed cup 5, by many glasss of integrated form COB packaging technologies, each LED chip is arranged in the recessed cup of coupling and carries out seamless encapsulation.Described recessed wall of cup is vertical wall of cup or for outward-dipping wall of cup, and the opaque or inwall of wall of cup scribbles reflectorized material.
Lens protective cover profile in multiple LED chip light source top encapsulation is hemisphere or dome-shaped.It can be the dome-shaped of any one rising angle in 120 °, 90 °, 60 °.
Above disclosed is only a kind of preferred embodiment of the present invention, certainly can not limit with this interest field of the present invention, and the equivalent variations of therefore doing according to the claims in the present invention, still belongs to the scope that the present invention is contained.
Claims (8)
1. the production method of the COB packaging LED module based on high thermal conductive substrate face-down bonding technique, is characterized in that, comprises step:
A, making high thermal conductive substrate, described high thermal conductive substrate comprises copper-clad base plate, insulating medium layer and the electrodeposited copper foil layer of Metal Substrate or organic resin base from top to bottom, is mixed with the silicon class medium filler of heat conduction in insulating medium layer;
B, on electrodeposited copper foil layer, make multiple bump electrodes, described bump electrode is electrically connected with electrolytic copper foil wiring; Again by face-down bonding technology by LED chip working face down, with the multiple bump electrode Direct Bonding on described high thermal conductive substrate;
C, at the light source top of multiple LED chips, adopt optical grade silicones protection glue that multiple LED chips are encapsulated on high thermal conductive substrate, sealing becomes the lens protective cover of dome shape, is finally combined into an overall LED light source module;
Described step B comprises, on the electrolytic copper foil wiring layer of described high thermal conductive substrate, is disposed with multiple bump electrodes, and the working face of LED chip is put into a high-intensity magnetic field down, utilizes in high-intensity magnetic field molecular separating force by working face and bump electrode Direct Bonding;
Adopt many glasss of integrated form COB encapsulation technologies, be about to carry out seamless encapsulation in recessed cup that each LED chip is placed on coupling, avoided light luminous between adjacent LED chip to disturb.
2. production method as claimed in claim 1, is characterized in that, described recessed wall of cup is vertical wall of cup or is outward-dipping wall of cup, and the opaque or inwall of wall of cup scribbles reflectorized material.
3. production method as claimed in claim 1; it is characterized in that; lens protective cover profile in multiple LED chip light source top encapsulation is hemisphere or circular arc; by cooperation, adjust recessed wall of cup gradient; control LED chip rising angle, finally make LED light source module rising angle be in 60 °～120 ° any one.
4. the COB packaging LED module based on high thermal conductive substrate face-down bonding technique, it is characterized in that, comprise high thermal conductive substrate and LED chip, described high thermal conductive substrate comprises copper-clad base plate, insulating medium layer and the electrodeposited copper foil layer of Metal Substrate or organic resin base from top to bottom, is mixed with the silicon class medium filler of heat conduction in insulating medium layer; On described high thermal conductive substrate, by face-down bonding technical battery, be connected to LED chip, on the electrodeposited copper foil layer of described high thermal conductive substrate, have the working face Direct Bonding of bump electrode and described LED chip; At multiple LED chip light sources top, adopt optical grade silicones protection rubber seal dress, sealing becomes the lens protective cover of a dome shape.
5. the COB packaging LED module based on high thermal conductive substrate face-down bonding technique as claimed in claim 4, is characterized in that, also includes recessed cup, by many glasss of integrated form COB packaging technologies, each LED chip is arranged in the recessed cup of coupling and carries out seamless encapsulation.
6. the COB packaging LED module based on high thermal conductive substrate face-down bonding technique as claimed in claim 5, is characterized in that, described recessed wall of cup is vertical wall of cup or is outward-dipping wall of cup, and the opaque or inwall of wall of cup scribbles reflectorized material.
7. the COB packaging LED module based on high thermal conductive substrate face-down bonding technique as claimed in claim 4, is characterized in that, in the copper-clad base plate bottom surface of described Metal Substrate or organic resin base, is also coated with one deck PI resin molding.
8. the COB packaging LED module based on high thermal conductive substrate face-down bonding technique as claimed in claim 4, is characterized in that, in the lens protective cover profile of multiple LED chip light source top encapsulation, is hemisphere or circular arc.
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| CN201110264649.0A CN102290504B (en) | 2011-09-07 | 2011-09-07 | Chip-on-board (COB) packaged light-emitting diode (LED) module based on high-thermal-conductivity substrate flip-chip bonding technique and production method |
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| CN105244432A (en) * | 2015-10-29 | 2016-01-13 | 杭州恒星高虹光电科技股份有限公司 | LED point-like COB module and manufacturing method thereof |
| CN105465647B (en) * | 2015-12-25 | 2020-03-20 | 佛山市国星光电股份有限公司 | Manufacturing method of full-color COB LED module packaging structure and packaging structure thereof |
| CN108995354B (en) * | 2018-08-08 | 2024-12-03 | 深圳市瑞丰光电紫光技术有限公司 | Offset curing light source structure and printing machine |
| CN114963054B (en) * | 2021-02-25 | 2025-02-11 | 杭州赛美蓝光电科技有限公司 | A biological lighting source |
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| CN101483210A (en) * | 2008-01-09 | 2009-07-15 | 林原 | Substrate structure of light emitting diode |
| CN201373272Y (en) * | 2009-01-22 | 2009-12-30 | 深圳市成光兴实业发展有限公司 | White-light LED light source module adopting COB technology and array interconnection |
| CN101728466A (en) * | 2008-10-29 | 2010-06-09 | 先进开发光电股份有限公司 | Ceramic packaging structure of high-power light-emitting diode and manufacturing method thereof |
| CN101722694A (en) * | 2009-11-17 | 2010-06-09 | 丹阳市永和电器科技有限公司 | High-Tg high-thermal conductivity aluminium-based copper-clad laminate |
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| US7145179B2 (en) * | 2004-10-12 | 2006-12-05 | Gelcore Llc | Magnetic attachment method for LED light engines |
| JP2008187122A (en) * | 2007-01-31 | 2008-08-14 | Optrex Corp | Electrode connection device and electrode connecting method |
| TW201011936A (en) * | 2008-09-05 | 2010-03-16 | Advanced Optoelectronic Tech | Light emitting device and fabrication thereof |
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| CN101483210A (en) * | 2008-01-09 | 2009-07-15 | 林原 | Substrate structure of light emitting diode |
| CN101728466A (en) * | 2008-10-29 | 2010-06-09 | 先进开发光电股份有限公司 | Ceramic packaging structure of high-power light-emitting diode and manufacturing method thereof |
| CN201373272Y (en) * | 2009-01-22 | 2009-12-30 | 深圳市成光兴实业发展有限公司 | White-light LED light source module adopting COB technology and array interconnection |
| CN101722694A (en) * | 2009-11-17 | 2010-06-09 | 丹阳市永和电器科技有限公司 | High-Tg high-thermal conductivity aluminium-based copper-clad laminate |
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