CN104332550A - COB type LED packing piece based on beryllium oxide ceramic substrate and production method - Google Patents
COB type LED packing piece based on beryllium oxide ceramic substrate and production method Download PDFInfo
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- CN104332550A CN104332550A CN201410596571.6A CN201410596571A CN104332550A CN 104332550 A CN104332550 A CN 104332550A CN 201410596571 A CN201410596571 A CN 201410596571A CN 104332550 A CN104332550 A CN 104332550A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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Abstract
The invention provides a COB type LED packing piece based on beryllium oxide ceramic substrate and production method, and the packing piece comprises a substrate made of the beryllium oxide ceramic board, a box dam and two symmetrical electrodes are formed on the substrate; a plurality of series circuits not crossed to each other and composed of light-emitting diode are formed in the substrate solid crystal region, two ends of each series circuit are respectively connected to two electrodes, the fluorescent powder glue is fixedly sealed in the box dam. The COB type LED packing piece based on beryllium oxide ceramic substrate is prepared by the steps as follows: cleaning beryllium oxide ceramic board, screen-printing the electrode, high temperature sintering, manufacturing the box dam, baking and dehumidifying, plasma cleaning, pasting LED chip, baking, bonding, baking, coating fluorescent powder glue in the box dam and solidifying, blanking, spectral testing, packaging and putting in storage. The beryllium oxide substrate is applied to the LED in the LED packing piece with good heat radiation capability, the high power LED packing product is small in volume, light in weight and high in reliability.
Description
Technical field
The invention belongs to electronic device and manufacture technical field of semiconductor encapsulation, relate to a kind of LED encapsulation piece, particularly a kind of COB formula LED encapsulation piece based on beryllium oxide ceramics substrate; The invention still further relates to a kind of production method of this packaging part.
Background technology
At present, the COB(Chip On Board that common processes is produced) formula LED, universal the widest be the encapsulation of aluminium base, ceramic substrate and copper base formula, form-factor has numerous specifications such as 1215,1515,2020.In COB formula LED product, the heat dispersion of product and its encapsulating material, overall dimension and product power closely related, especially the selecting of base plate for packaging.As 1215 ceramic substrates can only realize the encapsulation of below 10W product, the encapsulation of more high-power LED product can not be carried out, and if the encapsulation of more than 10W product will be realized, just must use larger sized ceramic substrate, as 1515,2020 etc.
Along with the continuous progress of science and technology, the demand of high power LED package moves towards slimming and cost degradation gradually, and LED technology is also progressively to variation, high-density integrated future development.How effectively to reduce the volume of high power LED package product, ensure good reliability, normally can use in various harsh external environment, become the problem that industry is in the urgent need to address, especially in the world today of the energy and limited material, the appearance of the LED product of a high power, small size will produce far-reaching economic and social benefit.
Summary of the invention
The object of this invention is to provide the COB formula LED encapsulation piece based on beryllium oxide ceramics substrate of a kind of small size, high power, high reliability, there is good heat dispersion
Another object of the present invention is to provide a kind of production method of above-mentioned LED encapsulation piece.
For achieving the above object, the technical solution adopted in the present invention is: a kind of COB formula LED encapsulation piece based on beryllium oxide ceramics substrate, the substrate comprising multiple light-emitting diode and adopt beryllium oxide ceramics plate to make; Substrate is provided with the box dam of tubular, is symmetrically arranged with the first electrode of arc and the second electrode of arc in box dam; Multiple light-emitting diode is provided with in crystal bonding area on substrate, all light-emitting diode face arrays are symmetrical, wherein the anode of several light-emitting diodes is connected with the first electrode respectively, also have the negative electrode of several light-emitting diodes to be connected with the second electrode respectively, anode is identical with the quantity of the light-emitting diode that the second electrode is connected with negative electrode with the quantity of the light-emitting diode that the first electrode is connected; Several light-emitting diodes are in series with successively between the anode of the light-emitting diode that the negative electrode of the light-emitting diode that anode is connected with the first electrode and negative electrode are connected with the second electrode, the light-emitting diode that the light-emitting diode that this anode is connected with the first electrode and this negative electrode are connected with the second electrode and middle several light-emitting diodes be connected in series form a series circuit jointly, all series circuits in crystal bonding area are non-cross, be sealed with phosphor gel in box dam, two electrodes and the equal sealing of all light-emitting diodes are in phosphor gel.
Another technical scheme of the present invention is: based on the production method of the COB formula LED encapsulation piece of beryllium oxide ceramics substrate described in a kind of claim 1, it is characterized in that, this production method is specifically carried out according to the following steps:
Step 1: cleaning beryllium oxide ceramics plate, forms substrate;
Step 2: under substrate being placed in 300 object nylon yarn half tones, according to the position between electrode pattern align substrates and half tone, scrapes to substrate surface by silver slurry from half tone; At the temperature of 950 DEG C ± 5 DEG C, toast 60min, naturally cool, complete the sintering of electrode;
Step 3: put glue and form box dam glue on substrate, put into the baking oven that temperature is 190 ± 5 DEG C, constant temperature baking 30min, forms beryllium oxide ceramics substrate;
Step 4: beryllium oxide ceramics substrate is dehumidified;
Step 5: adopt the beryllium oxide ceramics substrate after plasma cleaning technology cleaning dehumidifying;
Step 6: adopt full-automatic die bond technology, fix plurality of LEDs chip in the crystal bonding area of beryllium oxide ceramics substrate simultaneously; Adopt array die-bonding method during die bond, paste the insulating cement thickness < 15 μm of LED chip;
Step 7: in the baking oven that temperature is 50 DEG C, makes oven temperature rise to 170 DEG C with the speed of 4 DEG C/min from 50 DEG C, constant temperature baking 120min, then is cooled to 50 DEG C with the speed of 1.7 DEG C/min, completes baking;
Step 8: adopt gold thread bonding, bond-pull is greater than 6.6g;
Step 9: at the temperature of 80 ~ 85 DEG C, toasts 60 minutes;
Step 10: according to the just white requirement of product, by the formula of test design method determination product phosphor gel, then get encapsulation glue and fluorescent material by this formula, be fully uniformly mixed, form uniform phosphor gel, in 45min, complete a glue and enter next step Post RDBMS baking;
Step 11: Post RDBMS
Step 12: blanking, spectrophotometric test, packaging, warehouse-in, the obtained COB formula LED encapsulation piece based on beryllium oxide ceramics substrate.
The COB formula LED encapsulation piece that the present invention is based on beryllium oxide substrate adopts the beryllium oxide of high-termal conductivity (thermal conductivity reaches 310W/ (mk)) as baseplate material, adopt silk screen printing and high temperature sintering technique on beryllium oxide, complete the making of electrode, realize the use in the led of beryllium oxide substrate, make COB formula LED product have good heat dispersion, the encapsulation requirement that high power LED package small product size is little, lightweight, reliability is high can be realized.In addition, the COB formula LED product based on beryllium oxide substrate normally can use in various harsh external environment, has good reliability.
Accompanying drawing explanation
Fig. 1 is the generalized section of LED encapsulation piece of the present invention.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is the production technological process of LED encapsulation piece of the present invention.
Fig. 4 is the temperature profile toasted after die bond in LED encapsulation piece production process of the present invention.
Fig. 5 is the temperature profile of Post RDBMS baking in LED encapsulation piece production process of the present invention.
In figure: 1. substrate, 2. the first electrode, 3. box dam, 4. light-emitting diode, 5. bonding line, 6. phosphor gel, 7. the second electrode.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
As depicted in figs. 1 and 2, LED encapsulation piece of the present invention, comprises substrate 1, and substrate 1 adopts beryllium oxide (BiO) ceramic wafer to make; The surface that substrate 1 arranges chip is provided with the box dam 3 of tubular, and the second electrode 7, first electrode 2 being symmetrically arranged with the first electrode 2 of arc and arc in box dam 3 is identical with the structure of the second electrode 7, and is silver-coated electrode; These two electrodes contact towards the sidewall of box dam 3 with the inwall of box dam 3; on substrate 1, region between first electrode 2 and the second electrode 7 is crystal bonding area, multiple light-emitting diode 4 is provided with in this crystal bonding area, all light-emitting diodes 4 arrays are symmetrical, constitute light emitting diode matrix, wherein the anode of six light-emitting diodes 4 is connected with the first electrode 2 respectively by bonding line 5, the negative electrode of six light-emitting diodes 4 is also had to be connected with the second electrode 7 respectively by bonding line 5, these six light-emitting diodes 4 be connected with the first electrode 2 form one_to_one corresponding with these six light-emitting diodes 4 be connected with the second electrode 7, namely several light-emitting diodes 4 are in series with successively between the anode of light-emitting diode 4 that the negative electrode of light-emitting diode 4 that is connected with the first electrode 2 of anode and negative electrode are connected with the second electrode 7, the light-emitting diode 4 that the light-emitting diode 4 that this anode is connected with the first electrode 2 and this negative electrode are connected with the second electrode 7 and middle several light-emitting diodes 4 be connected in series form a series circuit jointly, article one, be connected by bonding line 5 between adjacent two light-emitting diodes 4 in all light-emitting diodes 4 in series circuit.Have six series circuits in crystal bonding area, and these six series circuits are non-cross, every bar series circuit forms by the light-emitting diode 4 that quantity is identical; Be sealed with phosphor gel 6 in box dam 3, all sealing is in phosphor gel 6 for two electrodes, all light-emitting diodes 4 and all bonding lines 5, and the upper surface of phosphor gel 6 forms a concave surface to packaging part inner recess.
Present invention also offers a kind of production method of above-mentioned LED encapsulation piece, its process chart, as shown in Figure 3, specifically carry out according to the following steps:
Step 1: beryllium oxide ceramics plate is put in ceramic cleaning agent, 20min is boiled after being heated to fluidized state, taking out rear cold-hot-cold deionized water, alternately to rinse each 15min(hot deionized water temperature be 30 DEG C), be positioned over ultrasonic cleaning 10min in acetone soln again, taking out rear cold-hot-cold deionized water, alternately to rinse each 15min(hot deionized water temperature be 30 DEG C), finally dry under infrared lamp, complete cleaning, form substrate;
Step 2: under substrate being positioned over 300 object nylon yarn half tones, according to the position between electrode pattern align substrates and half tone, and guarantee that the distance between substrate and half tone is 0.1 ± 0.01mm, use 45 ° of scrapers to be scraped to substrate surface from half tone by silver slurry and complete the printing of electrode; Afterwards, the substrate printing electrode is toasted 60min in the high temperature sintering furnace of 950 DEG C ± 5 DEG C, finally take out nature cooling, complete the sintering of electrode;
Step 3: after electrode fabrication completes, need to make box dam according to the requirement of substrate size specification, concrete grammar is: arranging point gum machine working method is picture round type mode of operation, box dam glue is injected point gum machine sebific duct, adjustment air pressure and some glue time, substrate is put the box dam glue that glue height of formation is 0.6mm ± 0.01mm, thickness is the tubular of 1mm ± 0.01mm, after some glue, substrate is put into the baking oven of 190 ± 5 DEG C, constant temperature baking 30min, completes box dam and makes, form beryllium oxide ceramics substrate;
Step 4: at the temperature of 155 DEG C ± 5 DEG C, baking 60min, dehumidifies to beryllium oxide ceramics substrate; By in beryllium oxide ceramics substrate be with steam all to toast release, for follow-up die bond and some glue ready;
Step 5: adopt plasma cleaning technology to clean the beryllium oxide ceramics substrate after dehumidifying; Physical cleaning method is adopted, with argon gas as purge gas during plasma cleaning; In cleaning process, the contamination on surface, beryllium oxide ceramics substrate crystal bonding area is fully removed, in addition, also will clean the oxide on surface of the silver coating of pressure welding area, to improve the routing quality of follow-up pressure welding;
Step 6: adopt full-automatic die bond technology, fix plurality of LEDs chip in the crystal bonding area of beryllium oxide ceramics substrate simultaneously; Array die-bonding method is adopted during die bond, according to product parameters requirement, design N string M gate array also (the i.e. parallel M bar series circuit arranged, every bar series circuit is in series successively by N number of LED chip, M and N is the integer being more than or equal to 1, the two ends of every bar series circuit are connected with two electrodes respectively), and detailed measurements is carried out with clear and definite to the inter-chip pitch in chip array, thus effective light that each LED chip is sent is maximum; Paste the insulating cement thickness < 15 μm of LED chip, ensure the shear strength of die bonding, larger arch silk space can be reserved to bonding again;
Step 7: put into the baking oven that temperature is 50 DEG C, makes oven temperature rise to 170 DEG C with the speed of 4 DEG C/min from 50 DEG C, after constant temperature baking 120min, then is cooled to 50 DEG C with the speed of 1.7 DEG C/min, completes whole baking;
Step 8: the cavity space surrounded due to box dam is very little, and the height in cavity is 0.6 mm, so can only by low radian pressure welding technology during pressure welding, for the pressure welding between chip of mutually getting lines crossed adjacent in chip array, for ensureing the consistency of loop height, wire length, general employing gold thread bonding, will guarantee that bond-pull is greater than 6.6g simultaneously; When chip and substrate silver-coated electrode district interconnect, also to note guaranteeing long bonding wire, the quality of low bank pressure welding;
Step 9: at the temperature of 80 ~ 85 DEG C, toasts 60 minutes;
In order to make a glue quality be improved, prebake conditions to be carried out to LED semi-finished product before a glue; Prebake conditions is to remove steam that product is with further on the one hand, the steam mainly adsorbed in the course of processing; Being the mobility in order to improve glue in a glue process on the other hand, making colloid fill up cavity fast; Under product being directly placed in during baking the temperature of 80 ~ 85 DEG C, constant temperature baking 60min, takes out afterwards at once and carries out a glue;
Step 10: some glue
Mainly be divided in gluing process and join glue, some glue two aspects;
According to the just white requirement of product, by the formula of test design method determination product phosphor gel, then encapsulation glue and fluorescent material is got by this formula, adopt the plant equipment of high speed rotation and revolution, encapsulation glue and fluorescent material are fully uniformly mixed, form uniform phosphor gel, the vacuum environment utilizing evacuator to produce in whole whipping process is by the bubble sucking-off in glue and be discharged into the external world, and glue is mixed more closely;
In order to prevent fluorescent material from occurring precipitation, phosphor gel must complete a glue and enter Post RDBMS baking in 45min; Point glue completes on full-automatic glue-dropping machine, will the semi-finished product of a glue be needed to be fixed on point gum machine, controls Glue dripping head and complete product point glue.Because COB product glue application region area is much larger compared with other LED product, so will adopt the some glue mode of picture round type when glue, this mode can make phosphor gel fill up cavity rapidly;
Step 11: Post RDBMS
Post RDBMS is to make glue fully solidify, and prevents fluorescent material generation deposited phenomenon.The two step bakings adopting low temperature and high-temperature baking to combine complete Post RDBMS work.The intensification of bake process adopts Gradient methods with cooling, other void gas of interiors of products are progressively discharged, thus ensures that glue fully solidifies, product bright dipping reaches best, product after a glue is put into the curing oven that temperature is 25 DEG C, 80 DEG C are warming up to from 25 DEG C, after constant temperature baking 1h, then with the ramp to 150 DEG C of 4.1 DEG C/s with the heating rate of 5.5 DEG C/s, constant temperature baking 3h, finally be cooled to 80 DEG C with the speed of 1.4 DEG C/s, complete whole baking, as shown in Figure 5;
Step 12: blanking, spectrophotometric test, packaging, warehouse-in
Blanking be in order to LED encapsulation piece is divided into one independently part process.In order to ensure working (machining) efficiency, automatic blanking system is adopted to carry out blanking; In blanking operation, (it is benchmark that the degree of depth of upper lower cutting blade is arranged with substrate thickness must to set the rotating speed of the degree of depth of lower cutting blade and cutting blade, the degree of depth sum of upper bottom knife must be less than substrate thickness 0.4 ± 0.05mm, rotating speed of flail is set to 30mm/s), prevent that strength is excessive causes substrate breaking.
Spectrophotometric test process adopts row's examining system to arrange the mode of survey piecewise.According to the concrete specifications design of product well corresponding testing mould, add measuring current in packaging part two end electrodes during test, in integrating sphere, its photoelectric parameter is tested.
Packaging adopts automatic taping-machine tape package.
After braid completes, put preservation in storage as requested.
LED encapsulation piece of the present invention, compared with the LED product of other equal-wattages, has volume little, lightweight, and the feature such as excellent electrical property and hot property.For the substrate of 1215 sizes, its substrate long 15.00 ± 0.05mm, wide 12.00 ± 0.05mm, thick 1.60 ± 0.05 mm, not only size and IC chip array completely compatible, and product power can accomplish more than 20W, is 3 ~ 5 times of same size COB formula LED product power.
embodiment 1
Beryllium oxide ceramics plate is put in ceramic cleaning agent, 20min is boiled after being heated to fluidized state, taking out rear cold-hot-cold deionized water, alternately to rinse each 15min(hot deionized water temperature be 30 DEG C), be positioned over ultrasonic cleaning 10min in acetone soln again, taking out rear cold-hot-cold deionized water, alternately to rinse each 15min(hot deionized water temperature be 30 DEG C), dry under infrared lamp, form substrate; Under substrate being positioned over 300 object nylon yarn half tones, according to the position between electrode pattern align substrates and half tone, ensure that the distance between substrate and half tone is 0.1mm, uses 45 ° of scrapers to be starched by silver to scrape to substrate surface from half tone and complete the printing of electrode; Afterwards, the substrate printing electrode is toasted 60min in the high temperature sintering furnace of 950 DEG C, naturally cool, complete the sintering of electrode; Arranging point gum machine working method is picture round type mode of operation, box dam glue is injected point gum machine sebific duct, glue put by substrate, the box dam glue that height of formation is 0.6mm, thickness is the tubular of 1mm, puts into the baking oven of 190 DEG C, constant temperature baking 30min, complete box dam to make, form beryllium oxide ceramics substrate; At the temperature of 155 DEG C, baking 60min; Adopt the beryllium oxide ceramics substrate after plasma cleaning technology cleaning dehumidifying; Adopt full-automatic die bond technology, fix plurality of LEDs chip in the crystal bonding area of beryllium oxide ceramics substrate simultaneously; Array die-bonding method is adopted during die bond, according to product parameters requirement, design N string M gate array also, and detailed measurements is carried out with clear and definite to the inter-chip pitch in chip array, thus effective light that each LED chip is sent is maximum; Paste the insulating cement thickness < 15 μm of LED chip; Put into the baking oven that temperature is 50 DEG C, make oven temperature with the ramp to 170 DEG C of 4 DEG C/min, constant temperature baking 120min, is cooled to 50 DEG C with the speed of 1.7 DEG C/min, completes baking; Adopt gold thread bonding, guarantee that bond-pull is greater than 6.6g; When chip and substrate silver-coated electrode district interconnect, also to note guaranteeing long bonding wire, the quality of low bank pressure welding; At the temperature of 80 DEG C, toast 60 minutes; According to the just white requirement of product, by the formula of test design method determination product phosphor gel, then encapsulation glue and fluorescent material is got by this formula, encapsulation glue and fluorescent material are fully uniformly mixed, form uniform phosphor gel, the vacuum environment utilizing evacuator to produce in whole whipping process is by the bubble sucking-off in glue and be discharged into the external world, and glue is mixed more closely; In 45min, complete a glue and enter Post RDBMS baking; Put into the curing oven that temperature is 25 DEG C, be warming up to 80 DEG C with the heating rate of 5.5 DEG C/s from 25 DEG C, after constant temperature baking 1h, then with the ramp to 150 DEG C of 4.1 DEG C/s, constant temperature baking 3h, is finally cooled to 80 DEG C with the speed of 1.4 DEG C/s, completes baking; Blanking, spectrophotometric test, packaging, warehouse-in; The obtained COB formula LED encapsulation piece based on beryllium oxide ceramics substrate.
embodiment 2
Beryllium oxide ceramics plate is put in ceramic cleaning agent, 20min is boiled after being heated to fluidized state, taking out rear cold-hot-cold deionized water, alternately to rinse each 15min(hot deionized water temperature be 30 DEG C), be positioned over ultrasonic cleaning 10min in acetone soln again, taking out rear cold-hot-cold deionized water, alternately to rinse each 15min(hot deionized water temperature be 30 DEG C), dry, form substrate; Under substrate being positioned over 300 object nylon yarn half tones, according to the position between electrode pattern align substrates and half tone, guarantee that the distance between substrate and half tone is 0.11mm, use 45 ° of scrapers to be scraped to substrate surface from half tone by silver slurry and complete the printing of electrode; Afterwards, the substrate printing electrode is toasted 60min in the high temperature sintering furnace of 955 DEG C, naturally cool, complete the sintering of electrode; Arranging point gum machine working method is picture round type mode of operation, box dam glue is injected point gum machine sebific duct, glue put by substrate, be formed as 0.61mm, box dam glue that thickness is the tubular of 1.01mm, put into the baking oven of 195 DEG C, constant temperature baking 30min, complete box dam to make, form beryllium oxide ceramics substrate; At the temperature of 160 DEG C, baking 60min, dehumidifies; Adopt the beryllium oxide ceramics substrate after plasma cleaning technology cleaning dehumidifying; Adopt full-automatic die bond technology, fix plurality of LEDs chip in the crystal bonding area of beryllium oxide ceramics substrate simultaneously; Array die-bonding method is adopted during die bond, according to product parameters requirement, design N string M gate array also (the i.e. parallel M bar series circuit arranged, every bar series circuit is in series successively by N number of LED chip, M and N is the integer being more than or equal to 1, the two ends of every bar series circuit are connected with two electrodes respectively), paste the insulating cement thickness < 15 μm of LED chip; Put into the baking oven that temperature is 50 DEG C, make oven temperature rise to 170 DEG C with the speed of 4 DEG C/min from 50 DEG C, constant temperature baking 120min, then be cooled to 50 DEG C with the speed of 1.7 DEG C/min, complete baking; Adopt gold thread bonding, guarantee that bond-pull is greater than 6.6g; When chip and substrate silver-coated electrode district interconnect, also to note guaranteeing long bonding wire, the quality of low bank pressure welding; At the temperature of 80 ~ 85 DEG C, toast 60 minutes; According to the just white requirement of product, by the formula of test design method determination product phosphor gel, then get encapsulation glue and fluorescent material by this formula, be fully uniformly mixed, form uniform phosphor gel, in 45min, complete a glue and enter Post RDBMS baking; In the curing oven that temperature is 25 DEG C, be warming up to 80 DEG C with the heating rate of 5.5 DEG C/s from 25 DEG C, after constant temperature baking 1h, then with the ramp to 150 DEG C of 4.1 DEG C/s, constant temperature baking 3h, is finally cooled to 80 DEG C with the speed of 1.4 DEG C/s, completes whole baking; Blanking, spectrophotometric test, packaging, warehouse-in, the obtained COB formula LED encapsulation piece based on beryllium oxide ceramics substrate.
embodiment 3
Beryllium oxide ceramics plate is put in ceramic cleaning agent, 20min is boiled after being heated to fluidized state, taking out rear cold-hot-cold deionized water, alternately to rinse each 15min(hot deionized water temperature be 30 DEG C), be positioned over ultrasonic cleaning 10min in acetone soln again, taking out rear cold-hot-cold deionized water, alternately to rinse each 15min(hot deionized water temperature be 30 DEG C), finally dry under infrared lamp, complete cleaning, form substrate; Under substrate being positioned over 300 object nylon yarn half tones, according to the position between electrode pattern align substrates and half tone, and guarantee that the distance between substrate and half tone is 0.99mm, use 45 ° of scrapers to be scraped to substrate surface from half tone by silver slurry and complete the printing of electrode; Afterwards, the substrate printing electrode is toasted 60min in the high temperature sintering furnace of 945 DEG C, naturally cool, complete the sintering of electrode; Arranging point gum machine working method is picture round type mode of operation, box dam glue is injected point gum machine sebific duct, glue put by substrate, the box dam glue that height of formation is 0.59mm, thickness is the tubular of 0.99 mm, in the baking oven of 185 DEG C, constant temperature baking 30min, completes box dam and makes, form beryllium oxide ceramics substrate; At the temperature of 155 DEG C ± 5 DEG C, baking 60min, dehumidifies to beryllium oxide ceramics substrate;
Adopt the beryllium oxide ceramics substrate after plasma cleaning technology cleaning dehumidifying; Adopt full-automatic die bond technology, fix plurality of LEDs chip in the crystal bonding area of beryllium oxide ceramics substrate simultaneously; Array die-bonding method is adopted during die bond, according to product parameters requirement, design N string M gate array also (the i.e. parallel M bar series circuit arranged, every bar series circuit is in series successively by N number of LED chip, M and N is the integer being more than or equal to 1, the two ends of every bar series circuit are connected with two electrodes respectively), paste the insulating cement thickness < 15 μm of LED chip; Put into the baking oven that temperature is 50 DEG C, make oven temperature rise to 170 DEG C with the speed of 4 DEG C/min from 50 DEG C, after constant temperature baking 120min, then be cooled to 50 DEG C with the speed of 1.7 DEG C/min, complete whole baking; Adopt gold thread bonding, guarantee that bond-pull is greater than 6.6g; When chip and substrate silver-coated electrode district interconnect, also to note guaranteeing long bonding wire, the quality of low bank pressure welding; At the temperature of 80 ~ 85 DEG C, toast 60 minutes; According to the just white requirement of product, by the formula of test design method determination product phosphor gel, then get encapsulation glue and fluorescent material by this formula, be fully uniformly mixed, form uniform phosphor gel; In 45min, complete a glue and enter Post RDBMS baking; Product after a glue is put into the curing oven that temperature is 25 DEG C, is warming up to 80 DEG C with the heating rate of 5.5 DEG C/s from 25 DEG C, after constant temperature baking 1h, again with the ramp to 150 DEG C of 4.1 DEG C/s, constant temperature baking 3h, is finally cooled to 80 DEG C with the speed of 1.4 DEG C/s, completes whole baking; Blanking, spectrophotometric test, packaging, warehouse-in; The obtained COB formula LED encapsulation piece based on beryllium oxide ceramics substrate.
Claims (10)
1. based on a COB formula LED encapsulation piece for beryllium oxide ceramics substrate, comprise substrate and multiple light-emitting diode, it is characterized in that, substrate (1) adopts beryllium oxide ceramics plate to make, substrate (1) is provided with the box dam (3) of tubular, is symmetrically arranged with first electrode (2) of arc and second electrode (7) of arc in box dam (3), multiple light-emitting diode (4) is provided with in crystal bonding area on substrate (1), all light-emitting diode (4) face arrays are symmetrical, wherein the anode of several light-emitting diodes (4) is connected with the first electrode (2) respectively, also have the negative electrode of several light-emitting diodes (4) to be connected with the second electrode (7) respectively, anode is identical with the quantity of the light-emitting diode (4) that the second electrode (7) is connected with negative electrode with the quantity of the light-emitting diode (4) that the first electrode (2) is connected, several light-emitting diodes (4) are in series with successively between the anode of the light-emitting diode (4) that the negative electrode of the light-emitting diode (4) that anode is connected with the first electrode (2) and negative electrode are connected with the second electrode (7), the light-emitting diode (4) that the light-emitting diode (4) that this anode is connected with the first electrode (2) and this negative electrode are connected with the second electrode (7) and middle several light-emitting diodes (4) be connected in series form a series circuit jointly, all series circuits in crystal bonding area are non-cross, phosphor gel (6) is sealed with in box dam (3), two electrodes and the equal sealing of all light-emitting diodes (4) are in phosphor gel (6).
2. the COB formula LED encapsulation piece based on beryllium oxide ceramics substrate according to claim 1, is characterized in that, every bar series circuit forms by the light-emitting diode (4) that quantity is identical.
3. the COB formula LED encapsulation piece based on beryllium oxide ceramics substrate according to claim 1 and 2, is characterized in that, is connected in a series circuit in all light-emitting diodes (4) between adjacent two light-emitting diodes (4) by bonding line (5).
4. the COB formula LED encapsulation piece based on beryllium oxide ceramics substrate according to claim 1, it is characterized in that, the upper surface of described phosphor gel (6) forms a concave surface to packaging part inner recess.
5. described in claim 1 based on a production method for the COB formula LED encapsulation piece of beryllium oxide ceramics substrate, it is characterized in that, this production method is specifically carried out according to the following steps:
Step 1: cleaning beryllium oxide ceramics plate, forms substrate;
Step 2: under substrate being placed in 300 object nylon yarn half tones, according to the position between electrode pattern align substrates and half tone, scrapes to substrate surface by silver slurry from half tone; At the temperature of 950 DEG C ± 5 DEG C, toast 60min, naturally cool, complete the sintering of electrode;
Step 3: put glue and form box dam glue on substrate, put into the baking oven that temperature is 190 ± 5 DEG C, constant temperature baking 30min, forms beryllium oxide ceramics substrate;
Step 4: beryllium oxide ceramics substrate is dehumidified;
Step 5: adopt the beryllium oxide ceramics substrate after plasma cleaning technology cleaning dehumidifying;
Step 6: adopt full-automatic die bond technology, fix plurality of LEDs chip in the crystal bonding area of beryllium oxide ceramics substrate simultaneously; Adopt array die-bonding method during die bond, paste the insulating cement thickness < 15 μm of LED chip;
Step 7: in the baking oven that temperature is 50 DEG C, makes oven temperature rise to 170 DEG C with the speed of 4 DEG C/min from 50 DEG C, constant temperature baking 120min, then is cooled to 50 DEG C with the speed of 1.7 DEG C/min, completes baking;
Step 8: adopt gold thread bonding, bond-pull is greater than 6.6g;
Step 9: at the temperature of 80 ~ 85 DEG C, toasts 60 minutes;
Step 10: according to the just white requirement of product, by the formula of test design method determination product phosphor gel, then get encapsulation glue and fluorescent material by this formula, be fully uniformly mixed, form uniform phosphor gel, in 45min, complete a glue and enter next step Post RDBMS baking;
Step 11: Post RDBMS
Step 12: blanking, spectrophotometric test, packaging, warehouse-in, the obtained COB formula LED encapsulation piece based on beryllium oxide ceramics substrate.
6. the production method of the COB formula LED encapsulation piece based on beryllium oxide ceramics substrate according to claim 5, is characterized in that, in described step 2, the distance between substrate and half tone is 0.1 ± 0.01mm.
7. the production method of the COB formula LED encapsulation piece based on beryllium oxide ceramics substrate according to claim 5, is characterized in that, in described step 3, the height of box dam glue is 0.6mm ± 0.01mm, thickness is 1mm ± 0.01mm.
8. the production method of the COB formula LED encapsulation piece based on beryllium oxide ceramics substrate according to claim 5, is characterized in that, in described step 4, at the temperature of 155 DEG C ± 5 DEG C, baking 60min, dehumidifies to beryllium oxide ceramics substrate.
9. the production method of the COB formula LED encapsulation piece based on beryllium oxide ceramics substrate according to claim 5, it is characterized in that, in described step 11, in the curing oven that temperature is 25 DEG C, be warming up to 80 DEG C with the heating rate of 5.5 DEG C/s from 25 DEG C, after constant temperature baking 1h, again with the ramp to 150 DEG C of 4.1 DEG C/s, constant temperature baking 3h, is finally cooled to 80 DEG C with the speed of 1.4 DEG C/s, completes Post RDBMS.
10. the production method of the COB formula LED encapsulation piece based on beryllium oxide ceramics substrate according to claim 5, it is characterized in that, in described step 12, in blanking operation, the degree of depth sum of upper blade and bottom knife is less than substrate thickness 0.4 ± 0.05mm, and rotating speed of flail is 30mm/s.
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