CN203871318U - Dual-layer wire rack structure - Google Patents
Dual-layer wire rack structure Download PDFInfo
- Publication number
- CN203871318U CN203871318U CN201420118365.XU CN201420118365U CN203871318U CN 203871318 U CN203871318 U CN 203871318U CN 201420118365 U CN201420118365 U CN 201420118365U CN 203871318 U CN203871318 U CN 203871318U
- Authority
- CN
- China
- Prior art keywords
- insulation
- weld part
- lead foot
- clearance
- dual
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The utility model discloses a dual-layer wire rack structure. A dual-layer wire rack is formed by a seeding layer and a soldering layer. The dual-layer wire rack comprises two or more units arranged to form a rectangular array, and a unit gap is arranged between any two adjacent units. Each unit is provided with a seeding portion and a soldering portion, each of which is provided with two or more first and second pins. An insulating gap is arranged between any two adjacent first pins and between any two adjacent second pins. Each first pin is provided with two or more first through holes, and each second pin is provided with two or more second through holes. Each insulating gap, each first through hole, each second through hole and each unit gap are filled with insulating material, so that the first and second pins, the insulating gaps and the first and second through holes of the seeding portion and the soldering portion can be closely combined correspondingly. Besides, the width of each insulating gap of the seeding portion can be minimized to satisfy the requirements of mini flip-chip packaging technology.
Description
Technical field
The utility model relates to a kind of LED conducting wire frame structure, in more detail, refers in particular to and a kind ofly take flip chip assembly process and be main dual-layer metal line shelf structure, and its benefit is that good, the mechanical endurance of thermal conductance is high, cost is low, can be applicable to high-capacity LED again.
Background technology
Known high-capacity LED chip package be take ceramic substrate as main, ceramic substrate is covered with after copper metal on the ceramic base material surface with conductive through hole, with high temperature (1065 ~ 1085 ℃), heat, copper metal and ceramic base material are binded, with etching mode, prepare circuit again, wherein, ceramic base material is aluminium nitride or alundum (Al2O3), with high temperature (850 ~ 900 ℃) sinter molding.
And as shown in Figure 1, the primary structure of ceramic substrate 2 is divided into the brilliant portion 21 of planting of carrying LED chip3, ceramic base material 20 and weld part 22, wherein, ceramic base material 20 is provided with conductive through hole 200, the making of ceramic base material 20 forms with high temperature sintering, ceramic substrate 2 is made with high-temperature heating copper metal and ceramic base material 20 is binded again, therefore the cost of manufacture of ceramic substrate 2 is higher than lead frame, ceramic base material 20 is aluminium nitride or alundum (Al2O3) again, and and glass material and adhesive form again sheet after mixing the slurry that becomes mud shape, therefore causing ceramic substrate 2 easily loses, cracked and endurance is low, the heat radiation of ceramic substrate 2 be take ceramic base material 20 as main again, wherein, ceramic base material 20 its heat conduction numbers made from aluminium nitride are about 170 ~ 230 W/mK, the ceramic base material 20 heat conduction numbers made from alundum (Al2O3) are about 20 ~ 24 W/mK, review the copper material heat conduction number of lead frame about 398 W/mK, therefore the heat transfer efficiency of ceramic base material 20 is far below lead frame.
Utility model content
The purpose of this utility model is to provide a kind of dual-layer metal line shelf structure, the high and low cost of manufacture of good, the mechanical endurance of its thermal conductance.
In order to achieve the above object, the utility model provides a kind of dual-layer metal line shelf structure, wherein by planting crystal layer and weld layer combines, dual-layer metal line shelf structure arranges with plural monomer the rectangular array that formed again, between each monomer and each monomer, be provided with monomer gap, each monomer is provided with plants brilliant portion and weld part, wherein:
Describedly plant brilliant portion and be provided with plural the first lead foot, between each first lead foot and each the first lead foot, be provided with a clearance for insulation, first lead foot of planting again brilliant portion is provided with plural the first through hole; Weld part is provided with plural the second lead foot, between each second lead foot and each the second lead foot, is provided with a clearance for insulation, and the lead foot of weld part is provided with plural the second through hole again; With insulation material, fill first and second through hole, clearance for insulation and the monomer gap plant brilliant portion and weld part again, make to plant the first lead foot of brilliant portion and the second lead foot of weld part, and clearance for insulation and the weld part clearance for insulation correspondence of planting brilliant portion are combined closely.
Described clearance for insulation and first and second through hole of planting brilliant portion and weld part formed by punching press or etching.
The described clearance for insulation of brilliant portion and weld part and the form that first and second through hole is T-shaped or inverted T shape of planting.
Described insulation material is thermosets or thermoplastic.
Described dual-layer metal line frame is that copper material, iron material or aluminium are made.
Describedly plant the first lead foot upper surface of brilliant portion and the second lead foot lower surface of weld part is provided with metal level.
The material of described metal level is silver, gold, nickel, palladium, tin.
Described thickness of planting brilliant portion is less than, is more than or equal to weld part, and the minimum widith that makes to plant the clearance for insulation of brilliant portion is less than, is more than or equal to the minimum widith of the clearance for insulation of weld part.
A kind of dual-layer metal line shelf structure, wherein by planting crystal layer, bonding coat and weld layer, combine, dual-layer metal line shelf structure arranges with plural monomer the rectangular array that formed again, between each monomer and each monomer, is provided with monomer gap, each monomer is provided with plants brilliant portion, gluing portion and weld part, wherein:
Describedly plant brilliant portion and be provided with plural the first lead foot, between each first lead foot and each the first lead foot, be provided with a clearance for insulation; Weld part is provided with plural the second lead foot, between each second lead foot and each the second lead foot, is provided with a clearance for insulation; With insulation material, fill clearance for insulation and the monomer gap of planting brilliant portion and weld part again, gluing portion is located at plants between brilliant portion and weld part, make to plant the first lead foot of brilliant portion and the second lead foot of weld part, and plant the clearance for insulation of brilliant portion and the clearance for insulation correspondence of weld part is combined into.
The second lead foot that described in each, first lead foot of planting brilliant portion of monomer is provided with plural the first through hole and weld part is provided with plural the second through hole, and each first and second through hole is filled with insulation material.
Described clearance for insulation and first and second through hole of planting brilliant portion and weld part formed by punching press or etching.
The described clearance for insulation of brilliant portion and weld part and the form that first and second through hole is T-shaped or inverted T shape of planting.
Described insulation material is thermosets or thermoplastic.
Described dual-layer metal line frame is copper material, iron material or aluminium.
Describedly plant the first lead foot upper surface of brilliant portion and the second lead foot lower surface of weld part is provided with metal level.
The material of described metal level is silver, gold, nickel, palladium, tin.
Described thickness of planting brilliant portion is less than, is more than or equal to weld part, and the minimum widith that makes to plant the clearance for insulation of brilliant portion is less than, is more than or equal to the minimum widith of the clearance for insulation of weld part.
Described gluing portion is a conducting resinl.
Described gluing portion is made as gluing portion and lower gluing portion, and on this, gluing portion is positioned at the first lead foot below of planting brilliant portion again, and this lower gluing portion is positioned at the second lead foot top of weld part, and this above gluing portion of gluing portion and lower gluing portion eutectic bond form again; Described upper gluing portion and lower gluing portion are gold, silver or tin material.
Adopt after such scheme, the utility model can minimize by planting the clearance for insulation width of brilliant portion, thereby meet miniature chip package technical need, copper material, iron material or aluminium with suitable thinness is made into the lead frame of planting crystal layer simultaneously, the lead frame that is made into weld layer with copper material, iron material or the aluminium of suitable thinness is again combined into dual-layer metal line shelf structure, elevating mechanism endurance.
Accompanying drawing explanation
Fig. 1 is known ceramic substrate schematic diagram;
Fig. 2 is embodiment mono-front view of the utility model dual-layer metal line shelf structure;
Fig. 3 is that the A-A of Fig. 2 is to cutaway view;
Fig. 4 is embodiment bis-front views of the utility model dual-layer metal line shelf structure;
Fig. 5 is that the B-B of Fig. 4 is to cutaway view;
Fig. 6 is embodiment tri-front views of the utility model dual-layer metal line shelf structure;
Fig. 7 is that the C-C of Fig. 6 is to cutaway view.
Embodiment
For hope the technical problems to be solved in the utility model, effect, feature and structure can have more detailed understanding, hereby lift preferred embodiment and coordinate graphic being described as follows.
First, refer to Fig. 2 and Fig. 3, from Fig. 2 and Fig. 3, the material of dual-layer metal line frame 1 of the present utility model is copper material, iron material or aluminium, dual-layer metal line frame 1 plants crystal layer 10 by one and a weld layer 11 combines, dual-layer metal line frame 1 structure arranges with plural monomer 12 rectangular array that formed again, and 12 of each monomer 12 and each monomers are provided with monomer gap 127, and each monomer 12 is provided with plants brilliant portion 120 and weld part 121.
Plant brilliant portion 120 and be provided with plural the first lead foot 122, each first lead foot 122 and each 122 of the first lead foot are provided with one first clearance for insulation D1, one second clearance for insulation D1 ', weld part 121 is provided with plural the second lead foot 122 ', between each second lead foot 122 ' and each the second lead foot 122 ', is provided with one the 3rd clearance for insulation D2, one the 4th clearance for insulation D2 ', and each first lead foot 122 is provided with plural the first through hole 124, each second lead foot 122 ' is provided with plural the second through hole 124 ', and plants the first clearance for insulation D1 of brilliant portion 120, the second clearance for insulation D1 ', the 3rd clearance for insulation D2 of weld part 121, the 4th clearance for insulation D2 ', and first through hole 124 of planting brilliant portion 120, the second through hole 124 ' of weld part 121, fill with the insulation material 13 of thermosets or thermoplastic with monomer gap 127, make to plant the first lead foot 122 of brilliant portion 120 and the second lead foot 122 ' of weld part 121, plant the second clearance for insulation D1 ' of brilliant portion 120 and the 3rd clearance for insulation D2 of the first through hole 124 and weld part 121, the second through hole 124 ', each first through hole 124, the corresponding combination of the second through hole 124 ' energy, wherein, plants the first clearance for insulation D1 of brilliant portion 120, the 3rd clearance for insulation D2 of the second clearance for insulation D1 ' and weld part 121, the 4th clearance for insulation D2 ' and each the first through hole 124, the second through hole 124 ' is formed the form of T-shaped or inverted T shape by punching press or etching, and plants the first lead foot 122 upper surfaces of brilliant portion 120 and the second lead foot 122 ' lower surface of weld part 121 is provided with metal level 125, and the material of metal level 125 can be silver, gold, nickel, palladium, tin, and the thickness of planting brilliant portion 120 is less than, be more than or equal to weld part 121, make to plant the first clearance for insulation D1 of brilliant portion 120, the minimum widith of the second clearance for insulation D1 ' is less than, be more than or equal to the 3rd clearance for insulation D2 of weld part 121, the minimum widith of the 4th clearance for insulation D2 ', wherein, to plant the thickness of brilliant portion 120, be less than weld part 121 again, and the first clearance for insulation D1 that plants brilliant portion 120 is less than the width of the second clearance for insulation D2 of weld part 121, the the first clearance for insulation D1 that plants brilliant portion 120 can be minimized, to meet miniature chip package technical need.
Continuous, please refer to Fig. 4 and Fig. 5, from Fig. 4 and Fig. 5, dual-layer metal line frame 1 plants crystal layer 10 by one and a weld layer 11 combines, dual-layer metal line frame 1 structure arranges with plural monomer 12 rectangular array that formed again, and 12 of each monomer 12 and each monomers are provided with monomer gap 127, plant a bonding coat 14 is set between crystal layer 10 and weld layer 11, make each monomer 12 plant brilliant portion 120 by one, one gluing portion 126 and a weld part 121 combine, plant brilliant portion 120 and be provided with plural the first lead foot 122, each first lead foot 122 and each 122 of the first lead foot are provided with one first clearance for insulation D1, one second clearance for insulation D1 ', weld part 121 is provided with plural the second lead foot 122 ', between each second lead foot 122 ' and each the second lead foot 122 ', be provided with one the 3rd clearance for insulation D2, the 4th clearance for insulation D2 ', with the insulation material 13 of thermosets or thermoplastic, fill the first clearance for insulation D1 that plants brilliant portion 120 again, the second clearance for insulation D1 ', the 3rd clearance for insulation D2 of weld part 121, the 4th clearance for insulation D2 ' and monomer gap 127, gluing portion 126 can be conducting resinl, to plant the first lead foot 122 of brilliant portion 120 and the lead foot 122 ' of weld part 121 and plant the second clearance for insulation D1 ' of brilliant portion 120 and the 3rd clearance for insulation D2 correspondence of weld part 121 is combined into, wherein, plant the first clearance for insulation D1 of brilliant portion 120, the 3rd clearance for insulation D2 of the second clearance for insulation D1 ' and weld part 121, the 4th clearance for insulation D2 ' is formed the form of T-shaped or inverted T shape by punching press or etching, and plant the first lead foot 122 upper surfaces of brilliant portion 120 and the second lead foot 122 ' lower surface of weld part 121 is provided with metal level 125, the material of metal level 125 can be silver, gold, nickel, palladium, tin, first lead foot 122 of planting again brilliant portion 120 also can be provided with plural the first through hole 124, the second lead foot 122 ' of weld part 121 also can be provided with plural the second through hole 124 ', and each first through hole 124, the second through hole 124 ' are also filled with the insulation material 13 of thermosets or thermoplastic, make to plant brilliant portion 120 and weld part 121 and more combine closely.
End refers to Fig. 6 and Fig. 7, from Fig. 6 and Fig. 7, gluing portion 126 also can be divided into gluing portion 1260 and lower gluing portion 1261, upper gluing portion 1260 can be gold, silver or tin material, lower gluing portion 1261 can be gold, silver or tin material, by upper gluing portion 1260 and lower gluing portion 1261, will plant the corresponding eutectic bond of the second lead foot 122 ' of the first lead foot 122 and the weld part 121 of brilliant portion 120.
The above embodiment is only the preferred embodiment for absolutely proving that the utility model is lifted, and protection range of the present utility model is not limited to this.Being equal to that those skilled in the art do on the utility model basis substitutes or conversion, all within protection range of the present utility model.Protection range of the present utility model is as the criterion with claims.
Claims (17)
1. a dual-layer metal line shelf structure, it is characterized in that: by planting crystal layer and weld layer combines, dual-layer metal line shelf structure arranges with plural monomer the rectangular array that formed again, between each monomer and each monomer, is provided with monomer gap, each monomer is provided with plants brilliant portion and weld part, wherein:
Describedly plant brilliant portion and be provided with plural the first lead foot, between each first lead foot and each the first lead foot, be provided with a clearance for insulation, first lead foot of planting again brilliant portion is provided with plural the first through hole; Weld part is provided with plural the second lead foot, between each second lead foot and each the second lead foot, is provided with a clearance for insulation, and the lead foot of weld part is provided with plural the second through hole again; With insulation material, fill first and second through hole, clearance for insulation and the monomer gap plant brilliant portion and weld part again, make to plant the first lead foot of brilliant portion and the second lead foot of weld part, and clearance for insulation and the weld part clearance for insulation correspondence of planting brilliant portion are combined closely.
2. dual-layer metal line shelf structure as claimed in claim 1, is characterized in that: described in plant brilliant portion and weld part clearance for insulation and first and second through hole by punching press or etching, formed.
3. dual-layer metal line shelf structure as claimed in claim 2, is characterized in that: described in plant the clearance for insulation of brilliant portion and weld part and first and second through hole while forming with etching, be the form of T-shaped or inverted T shape.
4. dual-layer metal line shelf structure as claimed in claim 1, is characterized in that: described insulation material is thermosets or thermoplastic.
5. dual-layer metal line shelf structure as claimed in claim 1, is characterized in that: described in plant crystal layer and weld layer is that copper material, iron material or aluminium are made.
6. dual-layer metal line shelf structure as claimed in claim 1, is characterized in that: described in plant the first lead foot upper surface of brilliant portion and the second lead foot lower surface of weld part is provided with metal level.
7. dual-layer metal line shelf structure as claimed in claim 1, is characterized in that: described in plant brilliant portion thickness be less than, be more than or equal to weld part, the minimum widith that makes to plant the clearance for insulation of brilliant portion is less than, is more than or equal to the minimum widith of the clearance for insulation of weld part.
8. a dual-layer metal line shelf structure, it is characterized in that: by planting crystal layer, bonding coat and weld layer, combine, dual-layer metal line shelf structure arranges with plural monomer the rectangular array that formed again, between each monomer and each monomer, be provided with monomer gap, each monomer is provided with plants brilliant portion, gluing portion and weld part, wherein:
Describedly plant brilliant portion and be provided with plural the first lead foot, between each first lead foot and each the first lead foot, be provided with a clearance for insulation; Weld part is provided with plural the second lead foot, between each second lead foot and each the second lead foot, is provided with a clearance for insulation; With insulation material, fill clearance for insulation and the monomer gap of planting brilliant portion and weld part again, gluing portion is located at plants between brilliant portion and weld part, make to plant the first lead foot of brilliant portion and the second lead foot of weld part, and plant the clearance for insulation of brilliant portion and the clearance for insulation correspondence of weld part is combined into.
9. dual-layer metal line shelf structure as claimed in claim 8, it is characterized in that: the second lead foot that described in each, first lead foot of planting brilliant portion of monomer is provided with plural the first through hole and weld part is provided with plural the second through hole, and each first and second through hole is filled with insulation material.
10. dual-layer metal line shelf structure as claimed in claim 9, is characterized in that: described in plant brilliant portion and weld part clearance for insulation and first and second through hole by punching press or etching, formed.
11. dual-layer metal line shelf structures as claimed in claim 10, is characterized in that: described in plant the clearance for insulation of brilliant portion and weld part and first and second through hole while forming with etching, be the form of T-shaped or inverted T shape.
12. dual-layer metal line shelf structures as claimed in claim 8, is characterized in that: described insulation material is thermosets or thermoplastic.
13. dual-layer metal line shelf structures as claimed in claim 8, is characterized in that: described in plant crystal layer and weld layer is copper material, iron material or aluminium.
14. dual-layer metal line shelf structures as claimed in claim 8, is characterized in that: described in plant the first lead foot upper surface of brilliant portion and the second lead foot lower surface of weld part is provided with metal level.
15. dual-layer metal line shelf structures as claimed in claim 8, it is characterized in that: described in plant brilliant portion thickness be less than, be more than or equal to weld part, the minimum widith that makes to plant the clearance for insulation of brilliant portion is less than, is more than or equal to the minimum widith of the clearance for insulation of weld part.
16. dual-layer metal line shelf structures as claimed in claim 8, is characterized in that: described gluing portion is a conducting resinl.
17. dual-layer metal line shelf structures as claimed in claim 8, it is characterized in that: described gluing portion is made as gluing portion and lower gluing portion, on this, gluing portion is positioned at the first lead foot below of planting brilliant portion again, and this lower gluing portion is positioned at the second lead foot top of weld part, this above gluing portion of gluing portion and lower gluing portion eutectic bond form again; Described upper gluing portion and lower gluing portion are gold, silver or tin material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420118365.XU CN203871318U (en) | 2014-03-17 | 2014-03-17 | Dual-layer wire rack structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420118365.XU CN203871318U (en) | 2014-03-17 | 2014-03-17 | Dual-layer wire rack structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203871318U true CN203871318U (en) | 2014-10-08 |
Family
ID=51652243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420118365.XU Expired - Fee Related CN203871318U (en) | 2014-03-17 | 2014-03-17 | Dual-layer wire rack structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203871318U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904124A (en) * | 2019-03-06 | 2019-06-18 | 西安航思半导体有限公司 | QFN encapsulating structure with anti-short-circuit function |
| CN109904125A (en) * | 2019-03-06 | 2019-06-18 | 西安航思半导体有限公司 | The preparation method of high temperature resistant QFN encapsulating structure |
-
2014
- 2014-03-17 CN CN201420118365.XU patent/CN203871318U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904124A (en) * | 2019-03-06 | 2019-06-18 | 西安航思半导体有限公司 | QFN encapsulating structure with anti-short-circuit function |
| CN109904125A (en) * | 2019-03-06 | 2019-06-18 | 西安航思半导体有限公司 | The preparation method of high temperature resistant QFN encapsulating structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103219299B (en) | Integrated antenna package assembly and forming method thereof | |
| CN104486901B (en) | Radiating insulating liner plate, package module comprising this liner plate and preparation method thereof | |
| CN102915985B (en) | Double-sided adhering structure of power electronic device and production method of double-sided adhering structure | |
| CN102222625A (en) | Manufacturing method of light-emitting diode (LED) packaging structure and base thereof | |
| CN102244022A (en) | Manufacturing method of single intermetallic compound micro-interconnecting structure of flip chip | |
| US9082760B2 (en) | Dual layered lead frame | |
| CN103346239A (en) | Method for manufacturing LED substrate, LED and LED crystallization method | |
| CN107393882B (en) | Silicon carbide device encapsulating structure and manufacturing method based on three layers of DBC substrate | |
| CN102891240A (en) | Light emitting diode (LED) with inverted structure and manufacturing method thereof | |
| CN207852729U (en) | A kind of double-colored temperature LED light sources of upside-down mounting COB | |
| CN203871318U (en) | Dual-layer wire rack structure | |
| JP2017034152A (en) | Power semiconductor device | |
| CN104681512A (en) | Flip chip-packaging heat dissipation structure and preparation method thereof | |
| CN201655833U (en) | Large-power LED encapsulation base | |
| CN101882606B (en) | Heat-dissipation semiconductor encapsulation structure and manufacturing method thereof | |
| CN101211872A (en) | Radiation-type semiconductor package member and its used radiation structure | |
| CN202816924U (en) | Power device packaging substrate | |
| CN201887041U (en) | High heat radiation patch type LED module | |
| CN104157638A (en) | 360-degree light emitting free-surrounding LED lamp filament with front-mounted chips inverted and manufacturing method thereof | |
| CN204167364U (en) | High heat conduction aluminium nitride full porcelain LED shell | |
| CN203707127U (en) | COB packaging structure with low thermal resistance and high luminous efficiency | |
| CN203466188U (en) | Novel bar-shaped COB device | |
| CN104810462A (en) | ESOP8 lead frame of medium-and high-power LED driving chip | |
| CN105990298A (en) | Chip packaging structure and preparation method thereof | |
| CN202957296U (en) | Light emitting diode having inverted structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141008 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |