CN201655833U - Large-power LED encapsulation base - Google Patents
Large-power LED encapsulation base Download PDFInfo
- Publication number
- CN201655833U CN201655833U CN2009200707873U CN200920070787U CN201655833U CN 201655833 U CN201655833 U CN 201655833U CN 2009200707873 U CN2009200707873 U CN 2009200707873U CN 200920070787 U CN200920070787 U CN 200920070787U CN 201655833 U CN201655833 U CN 201655833U
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- ceramic
- copper
- plate
- wiring
- power led
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Abstract
The utility model relates to a large-power LED encapsulation ceramic base, which comprises a ceramic wiring plate and a metal-based heat-sink wiring plate as well as electrode plates. The ceramic wiring plate comprises a ceramic plate and a pure-copper metal wiring. The ceramic plate is made of aluminum oxide, aluminum nitride or silicon carbide; and the pure-copper metal wiring is manufactured through chemical plating, electro-plating and sintering techniques. The thickness of a pure-copper layer ranges from 0.018 mm to 0.2 mm, preferably from 0.035 mm to 0.1 mm. The metal-based heat-sink wiring plate is made of a copper plate or an alumino-silicon-carbide plate, and the wiring includes steps of hot-pressing copper foil and insulating glue onto the heat sink, and patterning. The electrode plates are manufactured by stamping copper plates, and finally the ceramic wiring plate, the heat-sink wiring plate and the electrode plates are soldered by soft solder and assembled to form the large-power LED encapsulation base. The utility model has the benefits that the heat conducting ability of the large-power LED is remarkably improved, the heat impact resistance of the LED product is enhanced, and the SMT installation of the large-power LED can be realized.
Description
Technical field
The utility model relates to a kind of high-power LED encapsulation base of ceramic, is particularly suitable for the high heat conduction of SMT, the base of ceramic of high wiring precision.
Background technology
Along with the rapid progress of LED material epitaxy technology and chip technology, make the luminous efficiency of LED improve rapidly, can believe that in the future, LED will replace conventional light source to become the green illumination light source of 21 century soon.
Great power LED generally adopts aluminium base or copper base as the wiring heating panel at present, and 2 deficiencies of such substrate have restricted the thermal diffusivity and the thermal shock resistance of great power LED.The one, the insulation glue-line that substrate is used, it is the very low organic epoxies material of a kind of conductive coefficient, the thermal resistance height, the 2nd, baseplate material makes led chip bear the variations in temperature of spending 100 and the thermal stress that produces in the moment of opening and closing than the thermal coefficient of expansion of high several times of led chip more.Cause that chip heat is crooked, cracking or lead-in wire disconnect.
Narrated a kind of array-type LED encapsulating structure in the open CN201187741Y specification, described architectural feature is to utilize existing metallic packaging pedestal, for example T0-3 etc. by the external electrode contact pin of glass insulation type, realizes that the outer of internal circuit of LED encapsulating structure connects.Obvious this encapsulating structure can not be used for the occasion of SMT, uses golden tin solder in the structure simultaneously, and materials such as conductive silver glue had both increased cost, again heat radiation were brought adverse effect.
Summary of the invention
The technical solution adopted for the present invention to solve the technical problems is:
The purpose of this utility model provides a kind of high-power LED encapsulation pedestal, and the technical problem that solve is to promote properties of product and reliability, is suitable for the installation requirement of SMT again.
The utility model is by the following technical solutions: a kind of high-power LED encapsulation pedestal comprises the ceramic wiring plate and has the fine copper of wiring heat sink or have a heat sink and electrode slice of aluminium silicon carbide of wiring.Heat sink wiring plate of ceramic wiring plate and Metal Substrate and electrode slice adopt solder to realize electric interconnection and mechanical connection, constitute the minimum thermal dissipating path of thermal resistance.Described ceramic wiring plate is made of ceramic wafer and copper wiring layer, and ceramic material is made up of aluminium oxide or aluminium nitride or carborundum.The upper surface of ceramic wafer (1) is provided with led chip weld zone (2) and positive and negative electrode bonding region (3), the lower surface of ceramic substrate (1) is provided with heat radiation weld zone (7) and positive and negative electrode weld zone (4), and the electric interconnection of positive and negative electrode bonding region (3) and positive and negative electrode weld zone (4) is realized by the copper layer (6) on the inwall of the through hole (5) of ceramic wafer.Another feature of the present utility model is that described fine copper wiring layer adopts chemical plating, plating and sintering process to realize.Described fine copper wiring layer and ceramic matrix not only have physical bond power, and also have chemical bond power, adhesion-tight.The thickness of described fine copper wiring layer is 0.018mm to 0.2mm, 0.035mm to 0.1mm preferably, and the minimum widith of wiring and spacing can reach 0.15mm.The described aluminium silicon carbide heat sink (8) that has the copper heat sink (8) of wiring or have wiring.Its wiring (9) is distributed in the periphery of heat sink (8) upper surface.Electrode slice (10) is stamped to form by copper sheet.A kind of high-power LED encapsulation pedestal of the present utility model is to adopt soft solder with the ceramic wiring plate, and heat sink wiring plate of Metal Substrate and electrode slice solder form.
The technological process of production of the present utility model is summarized as follows:
The beneficial effect of a kind of high-power LED encapsulation pedestal of the present utility model is: the capacity of heat transmission that not only significantly improves the high-power LED encapsulation pedestal, and can realize that coupling is connected with led chip, promote the thermal shock resistance of product, solve hot crooked, the crackle of led chip and the technical barrier that lead-in wire disconnects, can also realize the SMT installation of great power LED.
The utlity model has following characteristics:
(1) thermal conductivity is good.Described pedestal selection all is the good conductor of heat, has avoided organic epoxies material of low thermal conductivity on thermal dissipating path.
(2) matching height.The utility model adopts the ceramic material of copper metallization, heat sink employing copper and aluminium silicon carbide material.Because led chip, pottery, heat sink thermal coefficient of expansion are close, make and between the operating period, can withstand thermal shock at the great power LED product, guarantee the reliability of properties of product and increase the service life.
(3) be suitable for SMT.A kind of high-power LED encapsulation pedestal of the present utility model, because heat sink surface is good copper of solderability or nickel-plated aluminum carborundum, they are easy to and radiator welding or crimping.
(4) being fit to the multicore sheet installs.A kind of high-power LED encapsulation pedestal of the present utility model can be installed a plurality of high-power LED chips, realizes array architecture, effectively improves the luminous efficiency of power density and LED.
(5) wiring precision height is suitable for led chip fine rule bonding.The ceramic substrate upper surface copper layer thickness of a kind of great power LED pedestal of the present utility model can be controlled in 0.035mm to 0.1mm scope.Therefore wiring width and spacing can reach 0.15mm, and the copper laminar surface is smooth, and the filament bond strength is high and stable.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Accompanying drawing is the overall structure cross-sectional schematic of embodiment of the present utility model
1 ceramic wafer, 2 chips welding districts, 3 lead-in wire bonding regions among the figure
4 positive and negative electrode weld zones, 5 through holes, 6 through-hole wall copper layers
7 heat radiation weld zones 8 heat sink (copper or aluminium silicon carbide)
9 external electrode weld zones, 10 electrode slices
Embodiment
Embodiment 1
Referring to accompanying drawing, ceramic wafer (1) is after cleaning and preliminary treatment, and overall chemical copper facing 0.005mm also carries out the electro-coppering first time immediately, and the thickness of copper reaches 0.01mm.Through graphical treatment, carry out the electro-coppering second time again, make (2) in the accompanying drawing, (3), (4), (6), the copper layer of (7) weld zone is thickeied 0.018mm to 0.2mm, preferably 0.035mm to 0.1mm, remove the copper substrate of conduction usefulness then, after the cleaning, the copper layer is carried out sintering, can obtain the great power LED ceramic wiring plate of different size through laser processing.Heat sink copper coin (8) after cleaning thereon the surface be coated with the insulation glue-line, place Copper Foil, form copper base after the hot pressing, then to its graphical treatment, form wiring (9) at its periphery, obtain the heat sink wiring plate of copper base.The copper electrode sheet (10) that punching out is shaped cleans.With soft solder that ceramic wiring plate, the heat sink wiring plate of copper base and electrode slice soldering is in aggregates at last.Promptly obtain a kind of high-power LED encapsulation pedestal of the present utility model.
Embodiment 2
Present embodiment and embodiment 1 difference are to make copper heat sink plate (8) into the aluminium silicon carbide plate, the upper surface of aluminium silicon carbide heat sink plate (8) is coated with the after heat of insulation glue-line and presses Copper Foil, after graphical, make the heat sink wiring plate of aluminium silicon carbide base of being with wiring (9), nickel plating again. all the other are the same with embodiment 1.
The high-power LED encapsulation pedestal that this embodiment makes is characterized in that aluminium silicon carbide heat sink (8) and ceramic wafer (1) coupling, and thermal shock resistance is stronger.
The above, only be two preferred embodiments of a kind of high-power LED encapsulation pedestal of the present utility model, be not that technical scope of the present utility model is made any restriction, every foundation technical spirit of the present utility model is made any trickle modification to the foregoing description, equivalent variations, modify, all still belong to the scope of the utility model technology contents.
Claims (3)
1. high-power LED encapsulation base of ceramic, it is characterized in that described pedestal is formed by ceramic wiring plate, the heat sink wiring plate of Metal Substrate and electrode slice solder, described ceramic wiring plate is made up of ceramic wafer (1) and fine copper wiring layer, the heat sink wiring plate of described Metal Substrate is made of copper coin or aluminium silicon carbide plate, and described electrode slice is by the copper sheet stamped.
2. a kind of high-power LED encapsulation base of ceramic according to claim 1, it is characterized in that described ceramic wafer (1) is made up of aluminium oxide, aluminium nitride or carbofrax material, described fine copper wiring layer adopts chemical plating, plating or sintering to make, and the thickness range of described fine copper wiring layer is 0.018mm to 0.2mm.
3. a kind of high-power LED encapsulation base of ceramic according to claim 2, it is characterized in that described ceramic wafer (1) upper surface is provided with chips welding district (2) and positive and negative electrode bonding region (3), described ceramic wafer (1) lower surface is provided with heat radiation weld zone (7) and positive and negative electrode weld zone (4), and the electric interconnection of the positive and negative electrode weld zone (4) of the positive and negative electrode bonding region (3) of described ceramic wafer (1) upper surface and described ceramic wafer (1) lower surface is realized by the copper layer (6) on ceramic wafer (1) through hole (5) inwall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200707873U CN201655833U (en) | 2009-04-21 | 2009-04-21 | Large-power LED encapsulation base |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200707873U CN201655833U (en) | 2009-04-21 | 2009-04-21 | Large-power LED encapsulation base |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201655833U true CN201655833U (en) | 2010-11-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200707873U Expired - Fee Related CN201655833U (en) | 2009-04-21 | 2009-04-21 | Large-power LED encapsulation base |
Country Status (1)
| Country | Link |
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| CN (1) | CN201655833U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222667A (en) * | 2011-07-14 | 2011-10-19 | 东莞市邦臣光电有限公司 | LED (light-emitting diode) light source module and packaging process thereof |
| CN102623356A (en) * | 2011-12-31 | 2012-08-01 | 广东风华高新科技股份有限公司 | Preparation method of chip-scale weldable ceramic heat sink |
| CN103354269A (en) * | 2013-06-17 | 2013-10-16 | 苏州晶品光电科技有限公司 | High-reliability SMD LED packaging structure |
| CN104185761A (en) * | 2012-04-05 | 2014-12-03 | 皇家飞利浦有限公司 | LED light structure |
| CN108364913A (en) * | 2018-04-25 | 2018-08-03 | 哈尔滨奥瑞德光电技术有限公司 | A kind of leadless packaging structure and preparation method for silicon carbide power device |
-
2009
- 2009-04-21 CN CN2009200707873U patent/CN201655833U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222667A (en) * | 2011-07-14 | 2011-10-19 | 东莞市邦臣光电有限公司 | LED (light-emitting diode) light source module and packaging process thereof |
| CN102623356A (en) * | 2011-12-31 | 2012-08-01 | 广东风华高新科技股份有限公司 | Preparation method of chip-scale weldable ceramic heat sink |
| CN102623356B (en) * | 2011-12-31 | 2015-10-28 | 广东风华高新科技股份有限公司 | A kind of preparation method of chip-scale weldable ceramic heat sink |
| CN104185761A (en) * | 2012-04-05 | 2014-12-03 | 皇家飞利浦有限公司 | LED light structure |
| CN103354269A (en) * | 2013-06-17 | 2013-10-16 | 苏州晶品光电科技有限公司 | High-reliability SMD LED packaging structure |
| CN103354269B (en) * | 2013-06-17 | 2016-01-13 | 苏州晶品光电科技有限公司 | High reliability SMD LED encapsulation structure |
| CN108364913A (en) * | 2018-04-25 | 2018-08-03 | 哈尔滨奥瑞德光电技术有限公司 | A kind of leadless packaging structure and preparation method for silicon carbide power device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101124 Termination date: 20130421 |