CN201307606Y - Novel ceramic package base - Google Patents
Novel ceramic package base Download PDFInfo
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- CN201307606Y CN201307606Y CNU2008202348974U CN200820234897U CN201307606Y CN 201307606 Y CN201307606 Y CN 201307606Y CN U2008202348974 U CNU2008202348974 U CN U2008202348974U CN 200820234897 U CN200820234897 U CN 200820234897U CN 201307606 Y CN201307606 Y CN 201307606Y
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Abstract
The utility model relates to a ceramic package base, in particular to a novel high-power novel ceramic package base. The base consists of an upper ceramic layer and a lower ceramic layer; the upper ceramic layer is provided with a reflective cup, an optical lens installation area which is used to install an optical lens and a secondary optical component installation area which is used to install a secondary optical component; the lower ceramic layer is used to install a chip, electrically communicated with an electrode on the bottom layer, and adopts the process of a plurality of laminated ceramic layers; the upper side of the lower ceramic layer is provided with a solid crystal area which is used to install the chip, a routing area which is connected with a chip electrode by a welding lead wire, and a braze welding area which is suitable for braze welding process connection. The novel ceramic package base has the advantages of improving the radiating performance of the SMD high power LED enclosing base and the problems of severe light decay and shorter life of the LED chip caused by temperature rise, enhancing the high- and low-temperature resistant impact performance of the LED product, improving the product reliability and stability, and reducing the production cost.
Description
Technical field
The present invention relates to a kind of ceramic encapsulated base, refer more particularly to a kind of high-power new ceramics encapsulation base.
Background technology
LED is as a kind of new type light source, owing to have energy-saving and environmental protection, the life-span is long, toggle speed is fast, can control luminescent spectrum and forbid making the more high conventional light source incomparable advantage of chroma obtain developing on an unprecedented scale with the size of the width of cloth.Be accompanied by the increase of LED current strength and luminous quantity, the caloric value of led chip also rises thereupon, and for high-capacity LED, 80% of the input energy all consumes with the form of heat.If these heats can not in time be discharged the external world, cause the temperature-rise effect of chip, the life-span of LED and light emission rate all can be had a greatly reduced quality; The pyroconductivity of the epoxy encapsulation pedestal that tradition is used only is 0.47W/mK, can not satisfy the heat radiation requirement of high-power LED far away.In recent years progressively substituted by the aluminum metal substrate of high thermal conductivity, the insulated influence of organic material of aluminium base, pyroconductivity is 1～2.2W/mK, can satisfy the encapsulation requirement of part higher-wattage LED, but the thermal coefficient of expansion and the led chip of aluminium base are widely different, it is crooked that very big or packaging operation does not very easily produce heat at that time when variations in temperature, causes chip flaw and luminous efficiency and reduce.Because LED brightness increases with the increase of drive current, to the LED of high brightness more, aluminium base can't satisfy its heat radiation requirement, but ceramic encapsulated base can effectively address these problems the desirable cooling base material that becomes high-capacity LED because of having thermal conductivity height, thermal coefficient of expansion and high-brightness LED crystal coupling, electric simulation strength height design reflectivity cup and heating column etc.
The ceramic encapsulated base of high-capacity LED mainly is to constitute (upper strata is a metal material, and as silver-plated copper, lower floor is the copper clad plate of aluminum oxide base material) by two-layer different materials at present.Because copper clad plate is with high costs, and limits owing to the design that does not have heating column causes the oxidated aluminium of pyroconductivity, 18～20W/mK only has an appointment; And the combination of levels must insulate, and completely cuts off so need to apply one deck insulating varnish, and again with the adhesive bonding, its air-tightness is good and cause environment resistant badly, and the cured layer that forms of insulating varnish and adhesive can hinder heat conduction between bottom base simultaneously.The product structure of prior art as depicted in figs. 1 and 2, the upper strata is silver-plated copper ring, lower floor is the copper clad plate of aluminum oxide base material, upper strata cremasteric reflex cup, chip is installed by lower floor, and realization and bottom electrode conduct.Wherein crystal bonding area 1 is used for cartridge chip; Routing district 2 connects the electrode of chip by welding lead; Bottom land 3 is by pedestal metallization wiring, and realization is connected with two electrodes of chip; Conduct hole 4 and connect double-layer metallization wiring up and down, realize the power-on and power-off conducting; Reflector 5 plays the effect of optically focused and reflection increase brightness; The heat radiation pad 6 that is used for the auxiliary heat dissipation effect is installed the optical lens installing zone 7 that optical lens is used, and is used to install the secondary optics assembly installing zone 8 of secondary optics assembly.
1), epoxy encapsulation pedestal and aluminium base thermal conductivity be low the shortcoming of said structure and cause reason to comprise:, and thermal coefficient of expansion and high-capacity LED chip differ too big, cause luminous efficiency and life-span to be had a greatly reduced quality, can't reach high power, long-life specification requirement.2), two main big shortcomings of existing ceramic encapsulated base are: first, two-layer employing adhesive is bonding, and bonding strength very easily weakens under the thermal environment being subjected to, and causes bond strength and poor air-tightness, even can produce two separate up and down, can not satisfy the use of wet environment.And the cured layer of bonding formation easily hampers the heat conduction between bottom base; The second, the thermal conductivity of bottom ceramic material is subject to the performance of ceramic material, has therefore weakened the integral heat sink performance of encapsulation base greatly, and has influenced the life-span and the luminous efficiency of high-capacity LED.
Based on the weak point of existing ceramic encapsulated base, the inventor has designed " a kind of new ceramics encapsulation base ".
Summary of the invention
The present invention is directed to above-mentioned the deficiencies in the prior art technical problem to be solved is: a kind of raising SMD high-capacity LED encapsulation base heat dispersion is provided and strengthens LED product high-low temperature resistant degree impact property, and improve the new ceramics encapsulation base of product reliability and stability.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of new ceramics encapsulation base, this pedestal is made of upper strata (pottery or metal) and following ceramic layer, upper strata (pottery or metal) cremasteric reflex cup, (pottery or metal) also is provided with the secondary optics assembly installing zone that is used to that the optical lens installing zone of optical lens is installed and is used to install the secondary optics assembly on the upper strata, following ceramic layer is used to install chip and realizes conducting with bottom electrode, adopts the multi-layer ceramics laminated process; Following ceramic layer upside is provided with the routing district that is used to that the crystal bonding area of chip is installed and passes through welding lead connection-core plate electrode, following ceramic layer upside also is provided with and is fit to the brazing area that soldering processes connect, leave 4 for the smaller electrode that detects usefulness at upside in addition, prevent that environment for use from causing short circuit; Be provided with metallized area between the lamination of following ceramic layer, metallized area constitutes corresponding circuit for connecting the metallization wiring of upper and lower sides electrode with the upper and lower sides electrode; Metallized area is in order to connect the upper and lower sides electrode, and its benefit is: 1, reduce the metal electrode area of levels junction, only leave 4 for the electrode apertures that detect usefulness, avoided welding because of the metal that carries out levels is fine the short circuit that takes place.2, avoid in use because of environmental impact, electric current has punctured the less space between last becket or fine weldering of metal and metal electrode easily and has been short-circuited.Following ceramic layer downside is provided with the bottom land that is connected with two electrodes of chip by metallization wiring realization, following ceramic layer also is provided with and is used to connect double-layer metallization wiring up and down to realize the hole that conducts of power-on and power-off connection, and this conducts inside or edge that the hole can be located at down ceramic layer; Reflector in the upper strata (pottery or metal) plays optically focused and reflects to improve the effect of amount of light.The described ceramic layer of going up is the aluminium oxide or the aluminium nitride ceramics material of electroplating surface or vacuum sputtering, or makes for the LTCC material; Described upward metal level is silver-plated copper; Described ceramic layer is down made by alumina ceramic material or aluminium nitride ceramics material.Upper strata (pottery or metal) uses silver-copper brazing alloy to be connected by soldering processes with following ceramic layer, is used to improve encapsulation base overall mechanical strength and heat dispersion and air-tightness; The thermal conductivity of high temperature alumina and aluminium nitride ceramics material is respectively 18～20W/mK and 170～230W/mK.
Described reflector is made by metallic copper, at reflector electroplating surface metal silver, can improve the reflectivity of reflector.
Described reflector is made by alumina material, electroplates or the vacuum sputtering metal level on the reflecting surface of reflector, can improve the reflectivity of reflector.
Described reflector LTCC (Low-temperature cofired ceramics, abbreviation LTCC) material is made, because LTCC material itself has very high reflectivity to the visible light all band, so do not need the reflecting surface re-plating or the vacuum sputtering metal level of picture aluminium oxide or aluminium nitride ceramics material reflector.
Described ceramic layer down can be provided with continuous high heating column or piece and heat radiation pad, high heating column or piece are located at down ceramic layer inside, the upper end of high heating column or piece is connected with crystal bonding area, high heating column or piece with the filling of highly heat-conductive materials such as silver-colored Ag, tungsten W, molybdenum Mo or copper Cu, quantity can be a plurality of or single, high heating column or piece are used for the heat that chip produces is derived fast, and heating column or piece cross-sectional area are big more, and heat conductivility is good more; The lower end of high heating column or piece is connected with the heat radiation pad, and the heat radiation pad is located at down the downside of ceramic layer, is used for the heat dissipation of high heating column or piece derivation is come out; The heat radiation pad connects outside heat abstractor, can auxiliary heat dissipation.
Described high heating column or piece are filled by highly heat-conductive materials such as silver, tungsten, molybdenum or copper and are formed, and are used to strengthen base of ceramic heat conductivility longitudinally.
Following ceramic layer material is aluminium oxide (Al
2O
3) pottery or aluminium nitride (AlN) pottery, provide support the position and the metallization wiring of chip, realize conducting with bottom electrode and realize that with bottom heat radiation pad thermal conductance is logical; Upper strata (pottery or metal) can be ceramic material or the metal material identical or different with lower floor, cremasteric reflex cup and optical lens installation site; The silver-copper brazing alloy that is used in combination of upper strata (pottery or metal) and following ceramic layer is connected by soldering processes, makes pedestal through plating again.
Single ceramic encapsulated base product can be installed single-chip or multicore sheet, the bottom internal wiring figure and the design number of plies can be according to number of chips and kind be installed respective change.Also can form encapsulation connection sheet by many ceramic encapsulated bases.
The concrete technological process of production of pedestal of the present invention is as follows:
Following ceramic layer material is aluminium oxide (Al
2O
3) pottery or aluminium nitride (AlN) pottery, the upper strata can be identical or different ceramic material or metal material, Ag, W, Mo or Cu are metallization material.
When following ceramic layer W, Mo metallization material:
Following ceramic layer: raw material dispersion → moulding → section → punching → embedding (seal hole) → planographic → lamination/pressurization → indent → binder removal/sintering.
The upper strata is identical with following ceramic layer material, is aluminium oxide (Al
2O
3) during pottery or aluminium nitride (AlN) pottery:
Last ceramic layer: raw material dispersion → moulding → binder removal/sintering → plating/vacuum sputtering metal level.
The upper strata is inequality with following ceramic layer material, and last ceramic layer is the LTCC material, and following ceramic layer is aluminium oxide (Al
2O
3) during pottery or aluminium nitride (AlN) pottery:
Last ceramic layer: raw material dispersion → moulding → binder removal/sintering.
When the upper strata is metal material, the machine-shaping becket.
Contraposition → location/soldering combination → electronickelling and silver again after finish on following ceramic layer and upper strata.
When following ceramic layer Ag, Cu metallization material:
Following ceramic layer: raw material dispersion → moulding → section → punching → lamination/pressurization → indent → binder removal/sintering → embedding (seal hole) → planographic → sintering.
The upper strata is identical with following ceramic layer material, is aluminium oxide (Al
2O
3) during pottery or aluminium nitride (AlN) pottery:
Last ceramic layer: raw material dispersion → moulding → binder removal/sintering → plating/vacuum sputtering metal level.
The upper strata is inequality with following ceramic layer material, and last ceramic layer is the LTCC material, and following ceramic layer is aluminium oxide (Al
2O
3) during pottery or aluminium nitride (AlN) pottery:
Last ceramic layer: raw material dispersion → moulding → binder removal/sintering.
When the upper strata is metal material, the machine-shaping becket.
Contraposition → location/soldering combination → electronickelling and silver again after finish on following ceramic layer and upper strata.
The beneficial effect of a kind of new ceramics encapsulation base of the present invention is: improved SMD high-capacity LED encapsulation base heat dispersion, improved reaching the problem of the lost of life greatly because of temperature rise causes the led chip light decay; Strengthen LED product high-low temperature resistant degree impact property, improve reliability of products, stability, reduce production costs.Compared with prior art, the present invention possesses following characteristics is arranged:
(1) thermal diffusivity is good.The last ceramic layer base material of LED ceramic encapsulated base of the present invention is Al
2O
3Perhaps AlN pottery or be LTCC material or metal material, its thermal conductivity height.Can be provided with the high heating column or the auxiliary heat conduction of piece of filling at the pedestal crystal bonding area, strengthen the vertical and horizontal heat-transfer effect of pedestal, well solve the key issue of pedestal heat radiation with highly heat-conductive materials such as Ag, W, Mo or Cu.
(2) mechanical performance height.Levels all is to be formed or processed by metal by the ceramic material sintering, has higher mechanical strength, is applicable to the making that next procedure production is installed, and is applicable to the needs of the various mechanical strengths that finished product of terminal company is used.
(3) thermal coefficient of expansion of base of ceramic and chip is complementary.In actual use, thermal coefficient of expansion is complementary more can guarantee the impact property of product high-low temperature resistant degree, improves LED reliability of products, stability greatly.
(4) anti-environmental change superior performance.The upper and lower connect by soldering processes in conjunction with using silver-copper brazing alloy instead, and the thermal coefficient of expansion of two layers of material and dielectric material is close about making; When variations in temperature was violent, the unlikely phenomenon that leaks air, air-tightness were guaranteed, have protected chip and encapsulating material thereof, thereby had improved the environment resistant of LED product.
(5) metallized area at following ceramic layer can reduce the metal electrode area of levels junction, and only leaves for the electrode aperture that detects usefulness, has avoided the short circuit that takes place because of the fine weldering of the metal that carries out levels.Can also avoid in addition in use because of environmental impact, electric current has punctured the less space between last becket or fine weldering of metal and metal electrode easily and has been short-circuited.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the overall structure end view of existing ceramic LED encapsulation base;
Fig. 2 is the overall structure vertical view of existing ceramic LED encapsulation base;
Fig. 3 is the overall structure end view of the embodiment of the invention one;
Fig. 4 is the overall structure vertical view of the embodiment of the invention one;
Fig. 5 is the overall structure end view of the embodiment of the invention two;
Fig. 6 is the overall structure vertical view of the embodiment of the invention two.
Description of reference numerals:
1, crystal bonding area 2, routing district 3, bottom land
4, conduct hole 5, reflector 6, heat radiation pad
7, optical lens installing zone 8, secondary optics assembly installing zone 9, high heating column or piece
10, upper strata 11, following ceramic layer 12, brazing area
13, electrode 14, metallized area
Embodiment
With reference to Fig. 3 to Fig. 6, the present invention implements like this:
In Fig. 3 to Fig. 4, a kind of new ceramics encapsulation base is made of upper strata 10 and following ceramic layer 11, upper strata 10 is made by pottery or metal, upper strata 10 is provided with reflector 5, optical lens installing zone 7 and secondary optics assembly installing zone 8, following ceramic layer 11 is used to install chip and realizes conducting with bottom electrode, following ceramic layer 11 upsides are provided with the routing district 2 that is used to that the crystal bonding area 1 of chip is installed and passes through welding lead connection-core plate electrode, following ceramic layer 11 downsides are provided with the bottom land 3 that is connected with two electrodes of chip by pedestal metallization wiring realization, following ceramic layer 11 is provided with metallized area 14, metallized area 14 is for being used to connect the metallization wiring of upper and lower sides electrode, pedestal also is provided with and is used to connect double-layer metallization wiring up and down and conducts hole 4 with what realize the power-on and power-off conducting, and this conducts inside or edge that hole 4 can be located at pedestal.Reflector 5 in the upper strata 10 plays the effect of optically focused and reflection increase brightness, and following ceramic layer 11 can be made by identical aluminium oxide or aluminium nitride ceramics material with upper strata 10; Also can be made by ceramic material inequality, following ceramic layer 11 is made by aluminium oxide or aluminium nitride ceramics material, and upper strata 10 is made by the LTCC material.Upper strata 10 is connected with the mode of following ceramic layer 11 by brazing area 12 sintering, be used to improve encapsulation base overall mechanical strength and heat dispersion, in the present embodiment, following ceramic layer 11 upsides leave 4 for the smaller electrode 13 that detects usefulness, and the thermal conductivity of high temperature alumina and aluminium nitride ceramics material is respectively 18～20W/mK and 170～230W/mK.In embodiment one, the quantity of high heating column or piece 9 is 8, and it is not limited only to 8, and different high heating columns or piece 9 can be set according to different demands.
Following ceramic layer 11 is provided with continuous high heating column or piece 9 and heat radiation pad 6, high heating column or piece 9 are located at down ceramic layer 11 inside, the upside of high heating column or piece 9 is connected with crystal bonding area 1, the heat that high heating column or piece 9 are used for chip is produced is derived, heat radiation pad 6 is located at down the downside of ceramic layer 11, be used for the heat dissipation of high heating column or piece 9 derivation is come out, the downside of high heating column or piece 9 is connected with heat radiation pad 6.
In the embodiment two of Fig. 5 and Fig. 6, they are different with embodiment one to be that the quantity of high heating column or piece 9 is 1.It also can be provided with the crystal bonding area 1 of varying number according to different needs in addition.
In the present embodiment, high heating column or piece 9 are made by silver metal, and thermal conductivity is about 430W/mK, and high in addition heating column or piece 9 also can be used to strengthen ceramic encapsulated base heat-transfer effect longitudinally by metal filled forming such as silver, tungsten, molybdenum or copper.
The above, it only is the preferred embodiment of a kind of new ceramics encapsulation base of the present invention, be not that technical scope of the present invention is imposed any restrictions, every foundation technical spirit of the present invention all still belongs in the scope of the technology of the present invention content thousand what trickle modification, equivalent variations and modification that top embodiment did.
Claims (6)
1, a kind of new ceramics encapsulation base, this pedestal is made of upper strata (10) and following ceramic layer (11), upper strata (10) is made by pottery or metal, following ceramic layer (11) adopts the multi-layer ceramics lamination to form, upper strata (10) cremasteric reflex cup (5), (10) also are provided with and are used to install optical lens installing zone (7) that optical lens uses and the secondary optics assembly installing zone (8) that is used to install the secondary optics assembly on the upper strata, following ceramic layer (11) is used to install chip and realizes conducting with bottom electrode, following ceramic layer (11) upside is provided with crystal bonding area (1) that is used to install chip and the routing district (2) that passes through welding lead connection-core plate electrode, following ceramic layer (11) downside is provided with the bottom land (3) that is connected with two electrodes of chip by pedestal metallization wiring realization, following ceramic layer (11) also is provided with and is used to connect double-layer metallization wiring up and down and conducts hole (4) with what realize that power-on and power-off connect, this conducts inside or edge that hole (4) can be located at down ceramic layer, reflector (5) in the upper strata (10) plays optically focused and reflects to improve the effect of amount of light, the invention is characterized in: described ceramic layer (11) upside down is provided with and is fit to the brazing area (12) that soldering processes connect, and is connected with soldering processes between upper strata (10) and the following ceramic layer (11).
2, a kind of new ceramics encapsulation base according to claim 1, it is characterized in that described ceramic layer (11) down is provided with metallized area (14) between ceramic laminated, metallized area (14) is provided with the metallization wiring that connects the upper and lower sides electrode, is provided with metallized area (14) at following ceramic layer (11) upside and connects the electrode that is used to detect.
3, a kind of new ceramics encapsulation base according to claim 1, it is characterized in that described reflector (5) made by aluminium oxide or aluminium nitride material, on the reflecting surface of reflector (5), electroplate or the vacuum sputtering metal level, be used to improve the reflectivity of reflector (5).
4, a kind of new ceramics encapsulation base according to claim 1 is characterized in that described reflector (5) is used by metallic copper to make, and is used to improve the argent of reflective cup reflects rate at reflector (5) electroplating surface.
5, a kind of new ceramics encapsulation base according to claim 1, it is characterized in that described ceramic layer (11) down can be provided with a plurality of continuous high heating columns or piece (9) and heat radiation pad (6), high heating column or piece (9) are located at down ceramic layer (11) inside, the upside of high heating column or piece (9) is connected with crystal bonding area (1), high heating column or piece (9) are used for the thermal conductance that chip produces is gone out, heat radiation pad (6) is located at down the downside of ceramic layer (11), be used for the heat dissipation of high heating column or piece (9) derivation is come out, the downside of high heating column or piece (9) is connected with heat radiation pad (6).
6, a kind of new ceramics encapsulation base according to claim 5 is characterized in that described high heating column or piece (9) form by silver, tungsten, molybdenum or copper are metal filled, are used to strengthen the vertical heat-transfer effect of pedestal.
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|---|---|---|---|
| CNU2008202348974U CN201307606Y (en) | 2008-12-10 | 2008-12-10 | Novel ceramic package base |
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|---|---|---|---|
| CNU2008202348974U CN201307606Y (en) | 2008-12-10 | 2008-12-10 | Novel ceramic package base |
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| CN102368529A (en) * | 2011-06-03 | 2012-03-07 | 王双喜 | Packaging structure of light source of high power LED |
| CN102368532A (en) * | 2011-06-03 | 2012-03-07 | 王双喜 | LED (light emitting diode) encapsulation structure with metal radiating fins |
| CN102610736A (en) * | 2012-03-29 | 2012-07-25 | 中微光电子(潍坊)有限公司 | White-light LED (Light-Emitting Diode) device |
| CN103354269A (en) * | 2013-06-17 | 2013-10-16 | 苏州晶品光电科技有限公司 | High-reliability SMD LED packaging structure |
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| CN102368529A (en) * | 2011-06-03 | 2012-03-07 | 王双喜 | Packaging structure of light source of high power LED |
| CN102610736A (en) * | 2012-03-29 | 2012-07-25 | 中微光电子(潍坊)有限公司 | White-light LED (Light-Emitting Diode) device |
| CN103579448A (en) * | 2012-08-07 | 2014-02-12 | 展晶科技(深圳)有限公司 | Light emitting diode packaging structure |
| CN103354269A (en) * | 2013-06-17 | 2013-10-16 | 苏州晶品光电科技有限公司 | High-reliability SMD LED packaging structure |
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