CN102244189A - LED encapsulated by ceramic substrate in integrated mode - Google Patents
LED encapsulated by ceramic substrate in integrated mode Download PDFInfo
- Publication number
- CN102244189A CN102244189A CN2011102020398A CN201110202039A CN102244189A CN 102244189 A CN102244189 A CN 102244189A CN 2011102020398 A CN2011102020398 A CN 2011102020398A CN 201110202039 A CN201110202039 A CN 201110202039A CN 102244189 A CN102244189 A CN 102244189A
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- ceramic substrate
- circuit
- layer
- metal base
- encapsulated led
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a light-emitting diode (LED) encapsulated by a ceramic substrate in an integrated mode, which comprises a ceramic substrate, wherein a circuit and a circuit positive electrode and a circuit negative electrode at both ends of the circuit are arranged on the metalized front side of the ceramic substrate; a metal base for connecting chips is arranged on the circuit; the chips and the metal base are connected by an eutectic layer; the metal base is connected with the adjacent chip by a connection wire; and fluorescent powder colloid is wrapped on the chips. In the LED encapsulated by the ceramic substrate in an integrated mode, thermal contact resistance is reduced by the application of the high-heat conduction ceramic substrate and the application of the eutectic technology and metalized technology, so that the radiating performance of a high-power integrated encapsulation LED light source is improved greatly.
Description
Technical field
The invention belongs to the LED technical field, relate to the integrated encapsulated LED of a kind of ceramic substrate.
Background technology
Development so far, that the LED product has had is energy-conservation, power saving, high efficiency, the reaction time is fast, life cycle is long and not mercurous, has advantages such as environmental benefit.Yet common LED high power products input power is about 20% and can converts light to, and remaining 80% electric energy all is converted to heat energy, so one of difficult problem that heat dissipation problem is LED need be solved.Generally speaking, the heat energy that is produced when LED is luminous will make LED knot surface temperature too high, and then influence product life cycle, luminous efficiency, stability if can't derive.
Especially there is following problem in the LED area source in current market as throwing light on more than the 50W: it is little with power 1, to do illumination; 2, heat radiation is bad, so unstable properties, the life-span is short.3, failure rate height is as coming off because the thermal coefficient of expansion of chip and support is inconsistent.
The substrate of LED encapsulation usefulness generally all is a metal substrate, because metal is on-insulated, so just also need add one deck dielectric film as high-power substrate on metal substrate (as aluminium or copper), can generate heat coefficient below 3W/m* ℃ because of dielectric film, and overall thermal conductivity can be poor.
Normally use colloid bonding between led chip and the substrate,, also have the existence of contact resistance simultaneously, so heat conductivility is poor because the conductive coefficient of crystal-bonding adhesive has only 0.8-3W/m* ℃.
Summary of the invention
The problem that the present invention solves is to provide a kind of ceramic substrate integrated encapsulated LED, overcomes the heat dissipation problem of the existing high-power encapsulation of LED, makes heat dispersion improve greatly.
The present invention is achieved through the following technical solutions:
The integrated encapsulated LED of a kind of ceramic substrate, comprise ceramic substrate, be provided with circuit anode, the circuit negative pole at circuit and circuit two ends in the metallized front of ceramic substrate, circuit is provided with the metal base that is used to connect chip, be connected by the eutectic layer between chip and the metal base, metal base is connected with an adjacent chip by connecting line, and fluorescent powder colloid is coated on the chip.
Described ceramic substrate is aluminium oxide ceramic substrate or aluminium nitride ceramics substrate, and its thickness is 0.5～1mm.
Described metallization is to make metal level by magnetron sputtering in the ceramic substrate front, makes circuit, circuit anode, circuit negative pole and metal base then on metal level.
Described metal level is tungsten layer, titanium layer, silver layer or gold layer.
Described eutectic layer is AuSn layer or AgSn/Sn layer, forms during with eutectic material welding chip and metal base.
The back side of described ceramic substrate is the metallized back side, and the metallized back side also is connected with fin.
The described metallized back side is to make silver layer or gold layer at the back side of ceramic substrate in the ceramic substrate front by magnetron sputtering.
The described metallized back side and fin weld by tin cream, form tin paste layer after the welding between the two.
Also be provided with fixing point on the described ceramic substrate.
Compared with prior art, the present invention has following beneficial technical effects:
The integrated encapsulated LED of ceramic substrate provided by the invention, the application of application by the high heat-conducting ceramic substrate and eutectic technology, metallization technology reduces contact heat resistance, and the heat dispersion of high-power integrated encapsulated LED light source is improved greatly:
Adopt the high heat-conducting ceramic substrate, as substrate, have high heat dispersion height: AL such as aluminium oxide ceramics or aluminium nitride ceramics
2O
3Conductive coefficient can reach 20W/m* ℃, and the ALN conductive coefficient can reach 200W/m* ℃, is the extraordinary insulation material of high heat conduction again, heat dispersion very good (near metallic aluminium).
Further, solve the problem of its conduction by metallized technology, solve the connectivity problem of chip and substrate simultaneously: normally use colloid bonding between chip and the substrate, because the conductive coefficient of crystal-bonding adhesive has only 0.8-3W/m* ℃, also has the existence of contact resistance simultaneously, so heat conductivility is poor; And adopt the eutectic technology, and with the eutectic material welding,, there is not contact heat resistance between chip and the thin-film ceramics substrate as AuSn or AgSn/Sn, increased heat conductivility.
And also welding with tin cream between the metallized back side and fin reduced thermal resistance, improves heat conductivility.Be mainly used in the encapsulation of the above great power LED of 50W, and, make light source power can reach 200W by integrated encapsulation structure.
Description of drawings
Fig. 1 is the planar structure schematic diagram of LED pottery integrated encapsulation structure;
Fig. 2 is the generalized section of LED pottery integrated encapsulation structure;
Fig. 3 is the local enlarged diagram of A portion among Fig. 2.
Wherein, 1 is chip, and 2 is circuit, and 3 is connecting line, and 4 is ceramic substrate, and 5 is circuit anode, and 6 is the circuit negative pole, and 7 is fluorescent powder colloid; 8 is the eutectic layer; 9 is soldering-tin layer; 10 is fin; 11 is anchor point.
Embodiment
The present invention is described in further detail below in conjunction with specific embodiment and accompanying drawing, and the explanation of the invention is not limited.
Referring to Fig. 1～Fig. 3, the integrated encapsulated LED of a kind of ceramic substrate, comprise ceramic substrate 4, be provided with circuit anode 5, the circuit negative pole 6 at circuit 2 and circuit 2 two ends in ceramic substrate 4 metallized fronts, circuit 2 is provided with the metal base that is used to connect chip 1, and chip 1 adopts vertical stratification, is connected by eutectic layer 8 between chip 1 and the metal base, metal base is connected with an adjacent chip 1 by connecting line 3, and fluorescent powder colloid 7 is coated on the chip 1.
Figure 1 shows that 49 chips are arranged.On ceramic substrate 4, also be provided with fixing point 11, so that install.
Described ceramic substrate 4 is aluminium oxide ceramic substrate or aluminium nitride ceramics substrate, adopts thin-film technique to make, and its thickness is 0.5～1mm, therefore is also referred to as the thin-film ceramics substrate.Adopt aluminium oxide ceramics or aluminium nitride ceramics as substrate, high-termal conductivity: AL is had in the extraordinary insulation of tool again
2O
3Conductive coefficient can reach 20W/m* ℃, and the ALN conductive coefficient can reach 200W/m* ℃, solves the problem of heat radiation.
In order to solve the problem of conduction, by ceramic substrate 4 is metallized:
Described metallization be by magnetron sputtering in the ceramic substrate front or the back side make metal level, the layer on surface of metal roughness that requires made is less than 3 μ m; On the front metal layer, make circuit 2, circuit anode 5, circuit negative pole 6 and metal base then.Described metal level is tungsten layer, titanium layer, silver layer or gold layer.
Be connected by eutectic layer 8 between chip 1 and the metal base, the thickness of eutectic layer is less than 6 μ m; Solved chip like this and normally used colloid bonding, and the conductive coefficient of crystal-bonding adhesive has only 0.8-3W/m* ℃, also have the existence of contact resistance simultaneously, so heat conductivility is poor.There is not contact heat resistance in formed eutectic layer 8, has increased heat conductivility.
Described eutectic layer 8 is specifically to can be AuSn layer or AgSn/Sn layer, forms during with eutectic material AuSn or AgSn/Sn welding chip and metal base.
Further, also, make silver layer or gold layer in the ceramic substrate front by magnetron sputtering at the back side of ceramic substrate 4 with the back face metalization of ceramic substrate 4 in order to improve heat dispersion; And then with the metallized back side and fin 10 (using copper or aluminium heat sink) by the tin cream welding, form tin paste layer 9 after the welding between the two, reduce thermal resistance, improve heat conductivility.
Claims (9)
1. integrated encapsulated LED of ceramic substrate, it is characterized in that, comprise ceramic substrate, be provided with circuit anode, the circuit negative pole at circuit and circuit two ends in the metallized front of ceramic substrate, circuit is provided with the metal base that is used to connect chip, be connected by the eutectic layer between chip and the metal base, metal base is connected with an adjacent chip by connecting line, and fluorescent powder colloid is coated on the chip.
2. the integrated encapsulated LED of ceramic substrate as claimed in claim 1 is characterized in that, described ceramic substrate is aluminium oxide ceramic substrate or aluminium nitride ceramics substrate, and its thickness is 0.5～1mm.
3. the integrated encapsulated LED of ceramic substrate as claimed in claim 1 is characterized in that, described metallization is to make metal level by magnetron sputtering in the ceramic substrate front, makes circuit, circuit anode, circuit negative pole and metal base then on metal level.
4. the integrated encapsulated LED of ceramic substrate as claimed in claim 3 is characterized in that, described metal level is tungsten layer, titanium layer, silver layer or gold layer.
5. the integrated encapsulated LED of ceramic substrate as claimed in claim 1 is characterized in that, described eutectic layer is AuSn layer or AgSn/Sn layer, forms during with eutectic material AuSn or AgSn/Sn welding chip and metal base.
6. the integrated encapsulated LED of ceramic substrate as claimed in claim 1 is characterized in that the back side of described ceramic substrate is the metallized back side, and the metallized back side also is connected with fin.
7. the integrated encapsulated LED of ceramic substrate as claimed in claim 6 is characterized in that, the described metallized back side is to make silver layer or gold layer at the back side of ceramic substrate in the ceramic substrate front by magnetron sputtering.
8. the integrated encapsulated LED of ceramic substrate as claimed in claim 6 is characterized in that the described metallized back side and fin weld by tin cream, forms tin paste layer after the welding between the two.
9. the integrated encapsulated LED of ceramic substrate as claimed in claim 1 is characterized in that, also is provided with fixing point on the described ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102020398A CN102244189A (en) | 2011-07-19 | 2011-07-19 | LED encapsulated by ceramic substrate in integrated mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102020398A CN102244189A (en) | 2011-07-19 | 2011-07-19 | LED encapsulated by ceramic substrate in integrated mode |
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| CN102244189A true CN102244189A (en) | 2011-11-16 |
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| CN2011102020398A Pending CN102244189A (en) | 2011-07-19 | 2011-07-19 | LED encapsulated by ceramic substrate in integrated mode |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102767724A (en) * | 2012-07-26 | 2012-11-07 | 中山伟强科技有限公司 | Ceramic substrate LED module and high-power LED lamp |
| CN103500787A (en) * | 2013-10-16 | 2014-01-08 | 北京大学东莞光电研究院 | Ceramic COB (Chip-on-Board) packaged LED (light-emitting diode) light source with bottom capable of being directly soldered on heat sink |
| CN105895778A (en) * | 2014-11-30 | 2016-08-24 | 浙江英特来光电科技有限公司 | Entire board package ceramic LED lamp filament and processing method thereof |
| CN106935695A (en) * | 2017-05-17 | 2017-07-07 | 广东工业大学 | A kind of uv-LED device |
| CN110350064A (en) * | 2013-07-01 | 2019-10-18 | 晶元光电股份有限公司 | Light-emitting diode component and production method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201112414Y (en) * | 2007-09-21 | 2008-09-10 | 万喜红 | High power LED package structure |
| TW201007051A (en) * | 2008-05-19 | 2010-02-16 | Toshiba Kk | Linear white light source, and backlight and liquid crystal display device using linear white light source |
| CN201804911U (en) * | 2010-09-09 | 2011-04-20 | 谢适发 | LED chip with ceramic substrate |
-
2011
- 2011-07-19 CN CN2011102020398A patent/CN102244189A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201112414Y (en) * | 2007-09-21 | 2008-09-10 | 万喜红 | High power LED package structure |
| TW201007051A (en) * | 2008-05-19 | 2010-02-16 | Toshiba Kk | Linear white light source, and backlight and liquid crystal display device using linear white light source |
| CN201804911U (en) * | 2010-09-09 | 2011-04-20 | 谢适发 | LED chip with ceramic substrate |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102767724A (en) * | 2012-07-26 | 2012-11-07 | 中山伟强科技有限公司 | Ceramic substrate LED module and high-power LED lamp |
| CN110350064A (en) * | 2013-07-01 | 2019-10-18 | 晶元光电股份有限公司 | Light-emitting diode component and production method |
| CN103500787A (en) * | 2013-10-16 | 2014-01-08 | 北京大学东莞光电研究院 | Ceramic COB (Chip-on-Board) packaged LED (light-emitting diode) light source with bottom capable of being directly soldered on heat sink |
| CN105895778A (en) * | 2014-11-30 | 2016-08-24 | 浙江英特来光电科技有限公司 | Entire board package ceramic LED lamp filament and processing method thereof |
| CN106935695A (en) * | 2017-05-17 | 2017-07-07 | 广东工业大学 | A kind of uv-LED device |
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Application publication date: 20111116 |