CN201681922U - Nitrided aluminium-copper metallized ceramic substrate - Google Patents
Nitrided aluminium-copper metallized ceramic substrate Download PDFInfo
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- CN201681922U CN201681922U CN2010201977177U CN201020197717U CN201681922U CN 201681922 U CN201681922 U CN 201681922U CN 2010201977177 U CN2010201977177 U CN 2010201977177U CN 201020197717 U CN201020197717 U CN 201020197717U CN 201681922 U CN201681922 U CN 201681922U
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- copper
- ceramic substrate
- aluminium nitride
- tungsten
- metallized ceramic
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Abstract
The utility model discloses a nitrided aluminium-copper metallized ceramic substrate. A copper metalized layer is coated on the nitrided aluminium-copper metallized ceramic substrate; and a tungsten metalized layer, or a molybdenum metalized layer or a tungsten-molybdenum metalized layer is arranged between the nitrided aluminium-copper metallized ceramic substrate and a copper metalized layer. The nitrided aluminium-copper metallized ceramic substrate has the advantages of high bonding strength, good heat-conducting and electric-conducting performances and easy control of thickness of the copper metalized layer, thus improving the reliability of the whole device.
Description
Technical field
The utility model relates to a kind of ceramic substrate, relates in particular to a kind of aluminium nitride copper metallization ceramic substrate that is used for high power device.
Background technology
The aluminium nitride copper metallization ceramic substrate that uses is to apply the layer of copper metal layer on aluminium nitride ceramics at present, this aluminium nitride copper metallization ceramic substrate has made full use of the high-termal conductivity of aluminium nitride ceramics and the high conductivity of copper metal, high-cooling property and high conductivity that aluminium nitride ceramics and copper melts combine are got up and can be realized substrate, can bearing great current and high power, but when forming copper metallization, need carry out oxidation processes to aln surface, and be to be difficult to accurately control for the thickness of aluminium nitride ceramics surface oxide layer, therefore, not only increased technology difficulty, and reduced bond strength between aluminium nitride and the copper metal, influence the reliability of entire device.
The utility model content
Technical problem to be solved in the utility model is to provide a kind of bond strength height, the heat-conductivity conducting performance is good, technology is easy to control aluminium nitride copper metallization ceramic substrate at shortcoming of the prior art.
For solving the problems of the technologies described above, technical solution adopted in the utility model is: a kind of aluminium nitride copper metallization ceramic substrate, on the aluminium nitride ceramics substrate, be coated with copper metallization, between aluminium nitride ceramics substrate and copper metallization, be provided with tungsten or molybdenum or tungsten metal layer.
Adopt the beneficial effect that technique scheme produced to be: 1) because the thermal coefficient of expansion of aluminium nitride ceramics and copper metal differs bigger, therefore in use easily produce thermal stress, preparation one deck tungsten or molybdenum or tungsten metal layer between aluminium nitride ceramics and copper metal, alleviate the influence that thermal stress causes as the tungsten of transition zone or molybdenum or tungsten metal layer, improved the reliability of substrate; 2) on preparation technology, be easy to realize the high strength bond of tungsten or molybdenum or tungsten metal layer and aluminium nitride ceramics, solved and to have relied on the problem that copper metallization is carried out could implementing after the oxidation processes in the aluminium nitride ceramics surface in the past, thereby realized the good combination of copper layer and aln layer, and made the copper metal layer thickness uniformity of plating.
Description of drawings
Fig. 1 is the structural representation of the utility model aluminium nitride ceramics substrate;
Among the figure: 1-aluminium nitride ceramics substrate, 2-tungsten or molybdenum or tungsten metal layer, 3-copper metallization.
Embodiment
Below in conjunction with accompanying drawing the utility model is described in further detail.
Embodiment one
Referring to Fig. 1, a kind of aluminium nitride copper metallization ceramic substrate mainly is made of aluminium nitride ceramics substrate 1, tungsten or molybdenum or tungsten metal layer 2 and copper metallization 3, and what select for use in the present embodiment is tungsten metal layer 2.Specifically preparation has a tungsten metal layer 2 on aluminium nitride ceramics substrate 1, at the tungsten metal layer 2 copper coating metallization layer 3 that powers on.Aluminium nitride ceramics substrate 1 is as framework material, makes tabularly, realizes the tungsten metal layer 2 of thick film then on its surface, and forms conductive pattern, utilizes electroplating technology at last, at tungsten metal layer 2 electroplating surface copper metallizations 3.Because tungsten or molybdenum or tungsten metal layer 2 are big with the bond strength of aluminium nitride ceramics substrate 1, therefore utilize preparation to realize the good combination of aluminium nitride ceramics substrate 1 with copper metallization 3 at the tungsten on aluminium nitride ceramics substrate 1 surface or molybdenum or tungsten metal layer 2.Tungsten, these two kinds of metal materials of molybdenum itself also have high thermal conduction characteristic, thereby less to the heat conductivility influence of aluminium nitride ceramics substrate 1, can be used in the high-power electronic device.
Claims (1)
1. an aluminium nitride copper metallization ceramic substrate is coated with copper metallization (3) on aluminium nitride ceramics substrate (1), it is characterized in that: be provided with tungsten or molybdenum or tungsten metal layer (2) between aluminium nitride ceramics substrate (1) and copper metallization (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201977177U CN201681922U (en) | 2010-05-21 | 2010-05-21 | Nitrided aluminium-copper metallized ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201977177U CN201681922U (en) | 2010-05-21 | 2010-05-21 | Nitrided aluminium-copper metallized ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201681922U true CN201681922U (en) | 2010-12-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201977177U Expired - Lifetime CN201681922U (en) | 2010-05-21 | 2010-05-21 | Nitrided aluminium-copper metallized ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201681922U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102950831A (en) * | 2011-08-23 | 2013-03-06 | 甄海威 | Ceramic, aluminum and porous copper composite material |
| CN103524044A (en) * | 2012-07-05 | 2014-01-22 | 周业投资股份有限公司 | Top electrode of reaction tank device for etching equipment |
-
2010
- 2010-05-21 CN CN2010201977177U patent/CN201681922U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102950831A (en) * | 2011-08-23 | 2013-03-06 | 甄海威 | Ceramic, aluminum and porous copper composite material |
| CN102950831B (en) * | 2011-08-23 | 2015-05-06 | 甄海威 | Ceramic, aluminum and porous copper composite material |
| CN103524044A (en) * | 2012-07-05 | 2014-01-22 | 周业投资股份有限公司 | Top electrode of reaction tank device for etching equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20101222 |
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| CX01 | Expiry of patent term |