CN103524044A - Top electrode of reaction tank device for etching equipment - Google Patents
Top electrode of reaction tank device for etching equipment Download PDFInfo
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- CN103524044A CN103524044A CN201210230622.4A CN201210230622A CN103524044A CN 103524044 A CN103524044 A CN 103524044A CN 201210230622 A CN201210230622 A CN 201210230622A CN 103524044 A CN103524044 A CN 103524044A
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- buffer layer
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Abstract
The invention discloses a top electrode of a reaction tank device for etching equipment. The top electrode comprises an electrode plate and a ceramic spray film. The electrode plate comprises a body layer, a buffer layer arranged on the body layer, and multiple vent holes which penetrate through the body layer and the buffer layer. The difference of thermal expansion coefficients of the body layer and the ceramic spray film is buffered through the buffer layer, and high binding force exists between the buffer layer and the ceramic spray film, so the buffer layer and the ceramic spray film can be tightly bound and difficultly drop. Meanwhile, the buffer layer and the ceramic spray film have good anti-corrosion effects so as to provide dual protection for the body layer, so that the electrode plate can be repeatedly used, and the equipment cost can be reduced.
Description
Technical field
The present invention relates to a kind of electrode, particularly relate to a kind of top electrode of reactive tank device of etching machines.
Background technology
In general plasma etching process; top electrode is the top that is positioned at glass substrate; must there is high electricity slurry resistance; for reaching this object; conventionally can carry out anodizing to this top electrode electrode plate body; make the surface of this electrode plate body produce one deck anonite membrane, for example TaiWan, China application case number No. 88107375 Patent Case.
Yet can corroding this anonite membrane, the fluorine using in plasma etching process (F), chlorine (Cl) isoreactivity corrosive gases cause this top electrode to lose efficacy, therefore must first remove in the mode of chemical milling the anonite membrane of corrupted, and then again grow anonite membrane, but aforementioned regeneration can cause the electrode plate body attenuation of this top electrode, when the thickness of this electrode plate body is crossed thin and while can't bear to use, need this top electrode to eliminate and renew, so manufacturing cost is higher.
In order to improve aforesaid problem; applicant once applied for TaiWan, China certificate of patent book number M396828 patent; the top electrode of this patent application is coating one deck pottery meltallizing film on an electrode plate body; by the resistance to corrosion of this pottery meltallizing film; protect this electrode plate body can not corroded by the corrosive gases of plasma etching process; when this pottery meltallizing film corrupted is when can't bear to use, only need again this pottery meltallizing film of coating on this electrode plate body just can continue use.Because ceramic meltallizing film is the rete being additionally attached on this electrode plate body, so this electrode plate body can attenuation and be reusable.
Although described M396828 patent has above-mentioned advantage and effect, still having can improvements, be mainly that thermal expansivity is high because the material of this electrode plate body is metal, and the material of ceramic meltallizing film be ceramic, and thermal expansivity is lower.That is to say that this electrode plate body exists an obvious interface from the intermembranous meeting of this pottery meltallizing because thermal expansivity is different, and when temperature raises or reduce, described interface is easily because swell increment inequality and cumulative stress, cause generation crack, interface, the hole of this pottery meltallizing film and this electrode plate body, and reduce the sticking power between this pottery meltallizing film and this electrode plate body.
Therefore; when corrosive gases passes through several ventilating pit of this top electrode; corrosive gases will pass aforesaid crack, hole and in described interface, corrode this electrode plate body; and cause this pottery meltallizing film to be combined with this electrode plate body and to peel off; reduced protection effect, so the structure of existing top electrode still haves much room for improvement.
Summary of the invention
The object of the present invention is to provide the associativity between a kind of rete good and incrust, and the top electrode of the reactive tank device of the good and reusable etching machines of erosion resistance.
The top electrode of the reactive tank device of etching machines of the present invention, comprises an electrode plate body, and a ceramic meltallizing film being arranged on this electrode plate body, and this electrode plate body comprises a body layer, and several ventilating pit.This electrode plate body also comprises that one is arranged at this body layer and the intermembranous buffer layer of this pottery meltallizing, and described ventilating pit is to run through up and down respectively this body layer and this buffer layer.
The top electrode of the reactive tank device of etching machines of the present invention, this buffer layer is a metal oxide layer forming in anodizing mode.
The top electrode of the reactive tank device of etching machines of the present invention, the thickness of this buffer layer is 5 ~ 150 μ m.
The top electrode of the reactive tank device of etching machines of the present invention, this buffer layer has this pottery meltallizing film setting of a confession and is rough uneven surface, and the roughness of this uneven surface is 0.3 ~ 40 μ m.
The top electrode of the reactive tank device of etching machines of the present invention, the material of this pottery meltallizing film is yttrium oxide, zirconium white, aluminum oxide, titanium oxide, magnesium oxide, calcium oxide, silicon oxide, chromic oxide or above-mentioned arbitrary combination.
The top electrode of the reactive tank device of etching machines of the present invention, the thickness of this pottery meltallizing film is 10 ~ 3000 μ m.
The top electrode of the reactive tank device of etching machines of the present invention, this top electrode also comprises the vitrified pipe that several coaxial plugs are loaded in described ventilating pit and supplied gas is passed through.
The top electrode of the reactive tank device of etching machines of the present invention, this top electrode also comprise several respectively communicatively coaxial plug be loaded on the vitrified pipe in described ventilating pit, and described vitrified pipe all comprises the end face of the uneven surface of this buffer layer of vicinity, and this pottery meltallizing film is arranged on the end face of described vitrified pipe and the uneven surface of this buffer layer.
The top electrode of the reactive tank device of etching machines of the present invention, this top electrode also comprises a protective membrane being coated on this pottery meltallizing film, and the material of this protective membrane is silicon compound, chromium cpd or above-mentioned arbitrary combination.
The top electrode of the reactive tank device of etching machines of the present invention, the thickness of this protective membrane is 5nm ~ 10 μ m.
Beneficial effect of the present invention is: by this buffer layer, cushion the difference of the thermal expansivity of this body layer and this pottery meltallizing film, and this buffer layer and this pottery meltallizing is intermembranous has a good bonding force, therefore between the two can be closely in conjunction with and incrust.This buffer layer and this pottery meltallizing film all have anticorrosive effect simultaneously, so that this body layer duplicate protection to be provided, so this electrode plate body is reusable and can reduce equipment cost.
Accompanying drawing explanation
Fig. 1 is a three-dimensional exploded view, and the preferred embodiment of top electrode of the reactive tank device of etching machines of the present invention is described;
Fig. 2 is the side-looking cross-sectional schematic of this preferred embodiment while being covered on a reaction chamber seat;
Fig. 3 is a partial schematic sectional view of this preferred embodiment;
Fig. 4 is a manufacturing flow chart of this preferred embodiment.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
Consult Fig. 1,2,3, a preferred embodiment of top electrode 91 of the present invention is one of them element of a reactive tank device 9 of an etching machines, this reactive tank device 9 also comprises a reaction chamber seat 93 that defines an opening up reaction compartment 92, and a lower electrode 94 being installed in this reaction compartment 92.This top electrode 91 is communicated with a gas input device 8, thereby this gas input device 8 can import the corrosive gases for etching glass in this reaction compartment 92, and described corrosive gases can be fluorine or chlorine.Because how this reactive tank device 9 operates the emphasis that non-the present invention improves, no longer describe in detail.
The electrode plate body 1 of the present embodiment comprises that a body layer 11, one are coated on the buffer layer 12 of the bottom surface of this body layer 11, several this body layer 11 that runs through up and down with this buffer layer 12 and around the annular distance face 14 arranging, and severally by described annular distance face 14, defines the ventilating pit 13 that forms and be communicated with this gas input device 8 and this reaction compartment 92 respectively.
Wherein, the material of the body layer 11 of the present embodiment is aluminium alloy (Al Alloy), but also can be made by metals such as titanium (Ti), titanium alloy (Ti Alloy), stainless steel (Stainless Steel), molybdenum (Mo), nickelalloys (Ni Alloy) on the implementation.
The material of the buffer layer 12 of the present embodiment is aluminum oxide (Al
2o
3), and thickness is 5 ~ 150 μ m.This buffer layer 12 is metal oxides of this body layer 11, so the material of this buffer layer 12 is according to the material of this body layer 11 and determine, does not need to limit.This buffer layer 12 has one down and is rough uneven surface 121, and the roughness of this uneven surface 121 (Ra) is 0.3 ~ 40 μ m, can increase this buffer layer 12 and this 3 of pottery meltallizing film and adhere to the area with combination, promotes the bonding force between layer body.
Each vitrified pipe 2 of the present embodiment respectively coaxial plug is loaded in described ventilating pit 13 and passes through with supplied gas, and the described vitrified pipe 2 described annular distance face 14 that reclines respectively, and each vitrified pipe 2 comprises the end face 21 of the uneven surface 121 of this buffer layer 12 of vicinity.Described vitrified pipe 2 is to be made by the stupalith insulating, and specifically can be aluminum oxide, aluminium nitride (AlN), yttrium oxide (Y
2o
3), magnesium oxide (MgO), boron nitride (BN) or above-mentioned arbitrary combination, can be also macromolecular material in addition.
Described vitrified pipe 2 covers the described annular distance face 14 of this electrode plate body 1 completely, and described vitrified pipe 2 functions are in etch process, and corrosive gases is inducted in the reaction compartment 92 of this reactive tank device 9 by this gas input device 8.By the anticorrosion properties of described vitrified pipe 2, effectively avoid described annular distance face 14 to be corroded and make described ventilating pit 13 produce the phenomenon of reamings, and then make the flow of corrosive gases remain constant, so can stablize the quality of etch process.
Yet on the implementation, the length of described vitrified pipe 2 can shorten, now described vitrified pipe 2 is all mounted on to the lower semisection of described annular distance face 14, and the end face 21 that makes described vitrified pipe 2 is all close to the uneven surface 121 of this buffer layer 12, the length of described vitrified pipe 2 be only greater than described annular distance face 14 length 1/4th, therefore just can reach the object of aforementioned stable corrosive gases flow, when implementing, described vitrified pipe 2 not take and is covered described annular distance face 14 completely for necessity.
The ceramic meltallizing film 3 of the present embodiment can being corroded property gas for the protection of this electrode plate body 1 erosion; and this pottery meltallizing film 3 is arranged on the uneven surface 121 of this buffer layer 12 and the end face 21 of described vitrified pipe 2 simultaneously; and then can avoid corrosive gases to diffuse in the gap of described vitrified pipe 2 and described annular distance face 14, can reach better protection effect.Preferably, the thickness of this pottery meltallizing film 3 is 10 ~ 3000 μ m, and surfaceness is 0.1 ~ 40 μ m.Wherein, the material of the ceramic meltallizing film 3 of the present embodiment is aluminum oxide, but on the implementation, can be also yttrium oxide, zirconium white (ZrO
2), aluminum oxide, titanium oxide (TiO
2), magnesium oxide, silicon oxide (SiO
2), calcium oxide (CaO), chromic oxide (Cr
2o
3) or above-mentioned arbitrary combination.The ceramic powder that the present embodiment is used is aluminum oxide.
This protective membrane 4 is overlayed on this pottery meltallizing film 3, and thickness is 5nm ~ 10 μ m.The material of described this protective membrane 4 is silicide, chromium compounds or above-mentioned arbitrary combination, specifically can be potassium silicate (K
2siO
3), water glass (Na
2siO
3), organic chromium, also can be selected from high molecular polymer in addition, specifically can be polyvinyl alcohol (PVA), polyvinyl butyral acetal (PVB) etc.But on the implementation,, because this pottery meltallizing film 3 all has erosion-resisting ability with this buffer layer 12, so not take, this protective membrane 4 is not set as necessary.
Consult Fig. 2,3,4, this top electrode 91 is when making, first the body layer of this electrode plate body 1 11 is carried out to anodizing, make Surface Creation one deck of this body layer 11 there is the metal oxide layer of multi-pore structure, and described metal oxide layer is exactly the buffer layer 12 of the present embodiment.After treating anodizing, just described vitrified pipe 2 coaxially can be filled in and packed in described ventilating pit 13 communicatively respectively.
Then in the mode of sandblast, this buffer layer 12 is carried out to roughened, make the bottom side of this buffer layer 12 form rough this uneven surface 121.Yet on the implementation, also can first to body layer 11, carry out roughened, then described vitrified pipe 2 is arranged in described ventilating pit 13, and then this body layer 11 is carried out to anodizing, equally can make the bottom surface of this buffer layer 12 coarse.Then in the mode of electricity slurry meltallizing, the ceramic powder meltallizing of molten state is coated to the uneven surface 121 of this buffer layer 12 and the end face 21 of described vitrified pipe 2, just can form this pottery meltallizing film 3 after waiting the ceramic powder cooled and solidified of aforementioned molten state.
Finally; by meltallizing particle adhesive-coated in the surface of this pottery meltallizing film 3; thereby fill up the gap of the surperficial ceramic powder of this pottery meltallizing film 3; and the bonding force between intensified ceramic powder; and then in low-temperature sintering mode; make meltallizing particle binding agent fixed and form this protective membrane 4, just complete the making of top electrode 91 of the present invention.Wherein, sintering temperature is the fusing point with this pottery meltallizing film 3 lower than this electrode plate body 1.
Below presentation of results effect of the present invention by experiment.
Consult table one, experimental example 1 ~ 3rd, according to the made top electrode 91 of making step of the present invention, experimental example 4 ~ 6 is not this protective membrane 4 of coating on the surface of this pottery meltallizing film 3 of experimental example 4 ~ 6 from the different place of experimental example 1 ~ 3.And the difference of comparative example and experimental example 1 ~ 3 is: comparative example lacks this protective membrane 4 and this buffer layer 12, and comparative example is this pottery meltallizing film 3 to be directly coated on to a surface via roughened of the body layer 11 of this electrode plate body 1.
In addition, the judgement of the tack of ceramic meltallizing film 3 and electrode plate body 1 in this experiment, to use the bonding strength of ASTM C633 thermally sprayed coating or the standard test methods (Standard Test Method for Adhesion or Cohesion Strength of Thermal Spray Coatings) of cohesive strength, by test piece via 30 circulations of thermal shock test of 100 ℃ after, again test piece is carried out to Elongation test, wherein, test piece can be born tensile stress is higher represents that the tack between rete is better.And the judgement of erosion resistance is to utilize salt-fog test, test piece was sprayed after 72 hours, for the surperficial complexion of test piece, observe and obtain.
Table one
From table one experimental result, the tensile stress that experimental example 1 ~ 6 of the present invention can bear is respectively all higher than comparative example, represent that tack of the present invention is better than comparative example really, because buffer layer 12 of the present invention carries out this body layer 11 anodizing and gets, that is to say that this buffer layer 12 belongs to a part for this body layer 11, so the bonding force of 11 of this buffer layer 12 and this body layer is good.Simultaneously, this buffer layer 12 is oxide compounds, all belong to stupalith with this pottery meltallizing film 3, therefore this buffer layer 12 and 3 thermal expansion coefficient differences of this pottery meltallizing film are little, when expanding with heat and contract with cold, both volume difference amounts are also less, so can reduce both interfaces, because expanding with heat and contract with cold, produce crack, hole, and then can improve the tack of this pottery meltallizing film 3 and this buffer layer 12.In addition, this buffer layer 12 producing due to anodizing is a kind of mushy structure, thus the present invention compared to more than comparative example the surface-area that increases of pore texture, and there is good mechanical bond effect, and promote the tack of this pottery meltallizing film 3.
Salt fog on the other hand, carries out in the salt atomizing process of 72 hours, when can diffuse to the intersection of this pottery meltallizing film 3 and this electrode plate body 1 via the crack of this pottery meltallizing film 3 and hole.Because the ceramic meltallizing film 3 of comparative example is to be directly arranged in the body layer 11 of this electrode plate body 1, therefore when salt fog diffuses to the intersection of this pottery meltallizing film 3 and this electrode plate body 1, can corrode this body layer 11, and this pottery meltallizing film 3 cannot be firmly attached in this body layer 11, and then cause the coating of comparative example to produce the phenomenon of peeling off.
Review the present invention and in 11 formation of body layer of this pottery meltallizing film 3 and this electrode plate body 1, there is this buffer layer 12 of erosion resistance; and when salt fog diffuses to the intersection of this pottery meltallizing film 3 and this electrode plate body 1 via the crack of this pottery meltallizing film 3 and hole, this buffer layer 12 can provide protection effect.Although this buffer layer 12 of experimental example 1,4 has basic protection effect, because the thinner thickness of this buffer layer 12, salt fog still has an opportunity to corrode this body layer 11, and then it is separated and protruding partly to cause coating to produce.The coating of experimental example 2,3 and experimental example 5,6 still maintains good order and condition, is because the thickness of this buffer layer 12 is enough to provide protection, makes salt fog be difficult to corrode this buffer layer 12, so this pottery meltallizing film 3 is still and is firmly attached on this buffer layer 12.In addition,, when this pottery meltallizing film 3 is etched while can't bear to use, this buffer layer 12 also can provide protection, so erosion resistance of the present invention is better than comparative example.It is worth mentioning that, although the coating of experimental example 2,3 and experimental example 5,6 all without difference, yet because experimental example 2,3 is also provided with this protective membrane 4 on this pottery meltallizing film 3, so the erosion resistance of experimental example 2,3 is better than experimental example 5,6 especially.
That is to say, the thickness of the buffer layer 12 of the present embodiment is when 5 ~ 150 μ m, and whole rete can obtain best tack and erosion resistance.When the thickness of this buffer layer 12 is less than 5 μ m, the thickness of this buffer layer 12 is crossed thin and enough anticorrosive protections cannot be provided, and produces the phenomenon of coating projection.On the other hand, when the thickness of this buffer layer 12 is greater than 150 μ m, tack between rete can decline, thus, not only without benefiting in effect, because this buffer layer 12 carries out anodizing by this body layer 11, get, generate this blocked up buffer layer 12 is to consume this body layer 11 on the contrary nonsensically, causes resource void to consume and increases cost.
It should be noted that, can be impaired because of the erosion of corrosive gases after the top electrode 91 of the present embodiment is used for some time.If this protective membrane 4 is corrupted and this pottery meltallizing film 3 also can be used, can first clean this top electrode 91, and form once again this protective membrane 4 and just can continue to use this top electrode 91.When if this protective membrane 4 all can't bear to use with this pottery meltallizing film 3, also can again carry out electricity slurry meltallizing and form new ceramic meltallizing film 3, and then form this protective membrane 4.In addition, if described vitrified pipe 2 corrupted also just can continue to use this top electrode 91 as long as change described vitrified pipe 2.Therefore, the body layer 11 of this electrode plate body 1 can the gas pickling of being corroded property and is damaged, and can reuse again and again, and not only environmental protection can also reduce equipment cost.
In sum, the difference by this body layer 11 of this buffer layer 12 bufferings with the thermal expansivity of this pottery meltallizing film 3, and this buffer layer 12 is all stupalith with this pottery meltallizing film 3, therefore between the two can be closely in conjunction with and incrust.This buffer layer 12 also has anticorrosive effect simultaneously; and when this protective membrane 4 damages with this pottery meltallizing film 3; this buffer layer 12 can also protect this body layer 11 can the gas pickling of being corroded property; therefore; the body layer 11 of this electrode plate body 1 is reusable and can reduce equipment cost, so really can reach object of the present invention.
Claims (10)
1. a top electrode for the reactive tank device of etching machines, comprises an electrode plate body, and a ceramic meltallizing film being arranged on this electrode plate body, and this electrode plate body comprises a body layer, and several ventilating pit; It is characterized in that: this electrode plate body also comprises that one is arranged at this body layer and the intermembranous buffer layer of this pottery meltallizing, and described ventilating pit is to run through up and down respectively this body layer and this buffer layer.
2. the top electrode of the reactive tank device of etching machines according to claim 1, is characterized in that: this buffer layer is a metal oxide layer forming in anodizing mode.
3. the top electrode of the reactive tank device of etching machines according to claim 2, is characterized in that: the thickness of this buffer layer is 5 ~ 150 μ m.
4. the top electrode of the reactive tank device of etching machines according to claim 2, is characterized in that: this buffer layer has this pottery meltallizing film setting of a confession and is rough uneven surface, and the roughness of this uneven surface is 0.3 ~ 40 μ m.
5. the top electrode of the reactive tank device of etching machines according to claim 4, is characterized in that: the material of this pottery meltallizing film is yttrium oxide, zirconium white, aluminum oxide, titanium oxide, magnesium oxide, calcium oxide, silicon oxide, chromic oxide or above-mentioned arbitrary combination.
6. the top electrode of the reactive tank device of etching machines according to claim 4, is characterized in that: the thickness of this pottery meltallizing film is 10 ~ 3000 μ m.
7. according to the top electrode of the reactive tank device of the etching machines described in arbitrary claim in claim 1 to 6, it is characterized in that: this top electrode also comprises the vitrified pipe that several coaxial plugs are loaded in described ventilating pit and supplied gas is passed through.
8. the top electrode of the reactive tank device of etching machines according to claim 4, it is characterized in that: this top electrode also comprise several respectively communicatively coaxial plug be loaded on the vitrified pipe in described ventilating pit, and described vitrified pipe all comprises the end face of the uneven surface of this buffer layer of vicinity, and this pottery meltallizing film is arranged on the end face of described vitrified pipe and the uneven surface of this buffer layer.
9. the top electrode of the reactive tank device of etching machines according to claim 8; it is characterized in that: this top electrode also comprises a protective membrane being coated on this pottery meltallizing film, the material of this protective membrane is silicon compound, chromium cpd or above-mentioned arbitrary combination.
10. the top electrode of the reactive tank device of etching machines according to claim 9, is characterized in that: the thickness of this protective membrane is 5nm ~ 10 μ m.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210230622.4A CN103524044A (en) | 2012-07-05 | 2012-07-05 | Top electrode of reaction tank device for etching equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210230622.4A CN103524044A (en) | 2012-07-05 | 2012-07-05 | Top electrode of reaction tank device for etching equipment |
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| CN103524044A true CN103524044A (en) | 2014-01-22 |
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|---|---|---|---|
| CN201210230622.4A Pending CN103524044A (en) | 2012-07-05 | 2012-07-05 | Top electrode of reaction tank device for etching equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261485A (en) * | 2018-11-30 | 2020-06-09 | 东京毅力科创株式会社 | Shower head and gas processing apparatus |
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|---|---|---|---|---|
| US3653862A (en) * | 1970-01-13 | 1972-04-04 | Owens Illinois Inc | Glass ceramic bodies, and method by boric oxide treatment |
| CN1047113A (en) * | 1989-05-08 | 1990-11-21 | 上海钢铁工艺技术研究所 | Method for surface reinforced treatment of metal part |
| CN201681922U (en) * | 2010-05-21 | 2010-12-22 | 中国电子科技集团公司第十三研究所 | Nitrided aluminium-copper metallized ceramic substrate |
| TWM396828U (en) * | 2010-08-25 | 2011-01-21 | Zhou Ye Invest Co Ltd | Upper electrode for reaction tank device of etching equipment |
| CN201817398U (en) * | 2010-10-21 | 2011-05-04 | 汉泰科技股份有限公司 | Upper electrode of reaction tank device of etching device |
| CN201817397U (en) * | 2010-08-12 | 2011-05-04 | 周业投资股份有限公司 | Reaction tank device of etching equipment |
-
2012
- 2012-07-05 CN CN201210230622.4A patent/CN103524044A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3653862A (en) * | 1970-01-13 | 1972-04-04 | Owens Illinois Inc | Glass ceramic bodies, and method by boric oxide treatment |
| CN1047113A (en) * | 1989-05-08 | 1990-11-21 | 上海钢铁工艺技术研究所 | Method for surface reinforced treatment of metal part |
| CN201681922U (en) * | 2010-05-21 | 2010-12-22 | 中国电子科技集团公司第十三研究所 | Nitrided aluminium-copper metallized ceramic substrate |
| CN201817397U (en) * | 2010-08-12 | 2011-05-04 | 周业投资股份有限公司 | Reaction tank device of etching equipment |
| TWM396828U (en) * | 2010-08-25 | 2011-01-21 | Zhou Ye Invest Co Ltd | Upper electrode for reaction tank device of etching equipment |
| CN201817398U (en) * | 2010-10-21 | 2011-05-04 | 汉泰科技股份有限公司 | Upper electrode of reaction tank device of etching device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261485A (en) * | 2018-11-30 | 2020-06-09 | 东京毅力科创株式会社 | Shower head and gas processing apparatus |
| CN111261485B (en) * | 2018-11-30 | 2022-12-06 | 东京毅力科创株式会社 | Shower head and gas processing apparatus |
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Application publication date: 20140122 |