CN201699011U - Lower thermal resistance ceramic copper-clad plate for IGBT modules - Google Patents
Lower thermal resistance ceramic copper-clad plate for IGBT modules Download PDFInfo
- Publication number
- CN201699011U CN201699011U CN2010201509919U CN201020150991U CN201699011U CN 201699011 U CN201699011 U CN 201699011U CN 2010201509919 U CN2010201509919 U CN 2010201509919U CN 201020150991 U CN201020150991 U CN 201020150991U CN 201699011 U CN201699011 U CN 201699011U
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- Prior art keywords
- ceramic substrate
- aluminium oxide
- clad plate
- thermal resistance
- copper foil
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Abstract
The utility model particularly relates to a lower thermal resistance ceramic copper-clad plate for IGBT modules. The copper-clad plate comprises a ceramic substrate and is characterized in that the ceramic substrate is an aluminium oxide ceramic substrate; one surface or two surfaces of the aluminium oxide ceramic substrate is or are provided with anaerobic red copper foil layers in a high-temperature bonding way; and a Cu-CU2O eutectic liquid layer is arranged between the aluminium oxide ceramic substrate and the anaerobic red copper foil layer. The copper-clad plate solves the defects of the prior art that a circuit board for the IGBT modules has low heat conduction efficiency and large self resistance due to more tiny pinholes and cavities, and has the advantages of being ultrathin and having high intensity, high heat conduction efficiency and low thermal resistance.
Description
Technical field
The utility model is specifically related to a kind of IGBT module low thermal resistance ceramic copper-clad plate.
Technical background
IGBT module control performance and energy-saving effect than the excellence that other power electronic device showed in electric power control obtained generally acknowledging of people.Be widely used at present that steel rolling is controlled automatically, electric motor car traction, Aero-Space control system, metal high frequency heat process field, because the IGBT module is higher than other power devices (as thyristor, metal-oxide-semiconductor etc.) pressure drop, power consumption is bigger, so need a kind of circuit board of good heat conductivity.Circuit substrate commonly used at present is because the restriction of structure and production technology generally all exists 0.5～1% trickle pin hole and cavity, and this has influenced the heat transfer efficiency and the self-resistance of circuit board greatly, and the stroke in pin hole and cavity mainly contains following factor:
1) formation of copper foil surface bonding preparation layer;
2) the ceramic substrate surface state is to the influence of angle of wetting;
3) Copper Foil and ceramic substrate fitting tightly under the condition of high temperature.
The utility model content
It is many with trickle pin hole of circuit board and cavity that the purpose of this utility model is to solve prior art IGBT module, cause the low and high defective of thermal resistance of heat transfer efficiency of circuit board, the IGBT module low thermal resistance ceramic copper-clad plate of a kind of ultrathin type, high strength, low thermal resistance is provided.
The utility model is achieved by the following technical solution:
It is a kind of IGBT module low thermal resistance ceramic copper-clad plate, comprise ceramic substrate, it is characterized in that described ceramic substrate is an aluminium oxide ceramic substrate, the one or both sides high temperature bonding of aluminium oxide ceramic substrate has anaerobic red copper foil layer, is provided with Cu-Cu between aluminium oxide ceramic substrate and the anaerobic red copper foil layer
2O eutectic liquid phase layer.
The thickness of aluminium oxide ceramic substrate is 0.19～1.0mm, and the thickness of anaerobic red copper foil layer is 0.1～0.3mm.By the qualification of above-mentioned thickness, the utlity model has ultra-thin characteristic.
Reduce for making trickle pin hole of the present utility model and cavity, improve heat transfer efficiency and reduce self-resistance, the utility model alternately deposits the cuprous oxide and the copper of 0.1 micron thickness in advance on anaerobic red copper foil layer, the cuprous oxide of deposition and the thickness of copper are 0.5～10 micron, adopt the copper film of 1～2 micron of PVD process deposits one deck on the surface of aluminium oxide ceramic substrate, during the high temperature bonding, adopt Copper Foil pre-molding technology, it is compound to make the bonding process of anaerobic red copper foil layer on the aluminium oxide ceramic substrate surface be linear areas all the time, very effective for discharging bubble like this, significantly reduced the cavity, in bonding process, the cuprous oxide on the copper film on aluminium oxide ceramic substrate surface and the anaerobic red copper foil layer at high temperature forms Cu-Cu
2O eutectic liquid phase layer, Cu-Cu
2O eutectic liquid phase layer is moistening aluminium oxide ceramic substrate and anaerobic red copper foil layer simultaneously, the gap of complete filling between them, cooling rear oxidation aluminium ceramic substrate and firm being bonded together of anaerobic red copper foil layer.
The utlity model has ultra-thin, intensity is high, heat transfer efficiency is high, the advantage of low thermal resistance.The utility model is with respect to the circuit board of prior art, and voidage reduces greatly, and thermal resistance can reduce more than 38%.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment 1;
Fig. 2 is the structural representation of the utility model embodiment 2.
As shown in FIG.: 1 aluminium oxide ceramic substrate; 2Cu-Cu
2O eutectic liquid phase layer; 3 anaerobic red copper foil layers.
Embodiment
Below in conjunction with the drawings and specific embodiments the utility model is further elaborated.
Embodiment 1
As shown in Figure 1: the equal high temperature bonding in the two sides of aluminium oxide ceramic substrate 1 has anaerobic red copper foil layer 3, is provided with Cu-Cu between aluminium oxide ceramic substrate 1 and the anaerobic red copper foil layer 3
2O eutectic liquid phase layer 2.
When the described ceramic copper-clad plate of present embodiment is made, adopt following processing step to make:
1) ceramic substrate cleans activation
2) Copper Foil cleans activation
3) ceramic substrate preliminary treatment
4) Copper Foil preliminary treatment
5) high temperature bonding
6) " circulation of cold-hot ladder " method cooling
As shown in Figure 2: a high temperature bonding of aluminium oxide ceramic substrate 1 has anaerobic red copper foil layer 3, and other are with embodiment 1.
Claims (2)
1. IGBT module low thermal resistance ceramic copper-clad plate, comprise ceramic substrate, it is characterized in that described ceramic substrate is an aluminium oxide ceramic substrate, the one or both sides high temperature bonding of aluminium oxide ceramic substrate has anaerobic red copper foil layer, is provided with Cu-Cu between aluminium oxide ceramic substrate and the anaerobic red copper foil layer
2O eutectic liquid phase layer.
2. IGBT module low thermal resistance ceramic copper-clad plate according to claim 1, the thickness that it is characterized in that aluminium oxide ceramic substrate is 0.19～1.0mm, the thickness of anaerobic red copper foil layer is 0.1～0.3mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201509919U CN201699011U (en) | 2010-04-06 | 2010-04-06 | Lower thermal resistance ceramic copper-clad plate for IGBT modules |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201509919U CN201699011U (en) | 2010-04-06 | 2010-04-06 | Lower thermal resistance ceramic copper-clad plate for IGBT modules |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201699011U true CN201699011U (en) | 2011-01-05 |
Family
ID=43400257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201509919U Expired - Lifetime CN201699011U (en) | 2010-04-06 | 2010-04-06 | Lower thermal resistance ceramic copper-clad plate for IGBT modules |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201699011U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102300405A (en) * | 2011-08-16 | 2011-12-28 | 深南电路有限公司 | Embedded-type circuit board and production method thereof |
| CN103117256A (en) * | 2011-11-17 | 2013-05-22 | 上海申和热磁电子有限公司 | Ceramic bonding copper substrate and manufacture method thereof |
| CN103515521A (en) * | 2013-09-16 | 2014-01-15 | 惠州雷士光电科技有限公司 | Copper-covered ALSiC composite radiating substrate and manufacturing method thereof |
| CN109309066A (en) * | 2017-07-27 | 2019-02-05 | 比亚迪股份有限公司 | A kind of ceramics cover aluminum bronze plate and preparation method thereof, heat dissipation element and IGBT mould group |
-
2010
- 2010-04-06 CN CN2010201509919U patent/CN201699011U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102300405A (en) * | 2011-08-16 | 2011-12-28 | 深南电路有限公司 | Embedded-type circuit board and production method thereof |
| CN102300405B (en) * | 2011-08-16 | 2014-05-07 | 深南电路有限公司 | Embedded-type circuit board and production method thereof |
| CN103117256A (en) * | 2011-11-17 | 2013-05-22 | 上海申和热磁电子有限公司 | Ceramic bonding copper substrate and manufacture method thereof |
| CN103515521A (en) * | 2013-09-16 | 2014-01-15 | 惠州雷士光电科技有限公司 | Copper-covered ALSiC composite radiating substrate and manufacturing method thereof |
| CN103515521B (en) * | 2013-09-16 | 2016-06-08 | 惠州雷士光电科技有限公司 | One covers copper AlSiC composite radiating substrate and preparation method thereof |
| CN109309066A (en) * | 2017-07-27 | 2019-02-05 | 比亚迪股份有限公司 | A kind of ceramics cover aluminum bronze plate and preparation method thereof, heat dissipation element and IGBT mould group |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110105 |
|
| CX01 | Expiry of patent term |