CN104112719A - Hybrid integrated circuit module and manufacturing method thereof - Google Patents
Hybrid integrated circuit module and manufacturing method thereof Download PDFInfo
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- CN104112719A CN104112719A CN201310371563.7A CN201310371563A CN104112719A CN 104112719 A CN104112719 A CN 104112719A CN 201310371563 A CN201310371563 A CN 201310371563A CN 104112719 A CN104112719 A CN 104112719A
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- integrated circuit
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Provided is a hybrid integrated circuit module and a manufacturing method thereof. The manufacturing method comprises the steps that a substrate, a heat radiator and a glass fiber plate with through holes arranged at preset positions are manufactured, and an insulating layer is covered on one of the surfaces of the substrate; the glass fiber plate and the heat radiator are arranged on the surface of the insulating layer; a circuit wiring layer is arranged on the surface of the glass fiber plate; power elements and non-power elements are respectively distributed on the heat radiator and the corresponding positions of the circuit wiring layer; and metal wires are connected between the circuit wiring layer, the heat radiator, the power elements and the non-power elements. Contact reliability of bonding points is enhanced, length of bonding wires is reduced and height difference of the bonding wires is reduced so that wire punching rate in molding can be effectively reduced, and thus qualified rate of manufacturing and long-term reliability of an intelligent power module are enhanced.
Description
Technical field
The invention belongs to electronic device manufacturing process field, relate in particular to a kind of hybrid integrated circuit module and manufacture method thereof.
Background technology
Intelligent Power Module (Intelligent Power Module, IPM) is a kind of by the power drive series products of power electronics and integrated circuit technique combination.IPM integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and the failure detector circuit such as overheated.IPM receives the control signal of MCU on the one hand, drives subsequent conditioning circuit work, sends the state detection signal of system back to MCU on the other hand.Compared with the discrete scheme of tradition, IPM wins increasing market with advantages such as its high integration, high reliability, be particularly suitable for frequency converter and the various inverter of drive motors, it is frequency control, metallurgical machinery, electric traction, servo-drive, the desirable power electronic device of one of frequency-conversion domestic electric appliances.
The structure of existing Intelligent Power Module 100 is described with reference to Fig. 1.Fig. 1 (A) is the vertical view of described Intelligent Power Module 100, and Fig. 1 (B) is X-X ' the line profile of Fig. 1 (A).
Described Intelligent Power Module 100 has following structure, and it comprises: circuit aluminium base 106; Be located at the described wiring 108 forming on the lip-deep insulating barrier 107 of described aluminium base 106; Be fixed on the non-power element 104 on described wiring 108; Be fixed on radiator 103 on described wiring 108; Be fixed on the power component 109 on described radiator 103; Connect the metal wire 105 of non-power element 104, described power component 109 and described wiring 108; The pin 101 being connected with described wiring 108; The sealed resin 102 of at least one side of described aluminium base 106 seals, and in order to improve sealing, aluminium base 106 all can be sealed, and in order to improve thermal diffusivity, can make the back side of described aluminium base 106 be exposed under outside state and seal.
Described Intelligent Power Module 100 generally can be operated in severe operating mode, as the off-premises station of convertible frequency air-conditioner, when summer, operating ambient temperature can reach 50 DEG C, and described power device 109, as IGBT(Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) etc., in the course of work, can there is a large amount of heat, the temperature of described power device 109 can reach more than 120 DEG C, in order to improve thermal diffusivity, described radiator 103 generally can do thicklyer (being generally 1mm～2mm), add the thickness (being generally 0.07mm～0.2mm) of the above power device 109 own, therefore, the difference in height of the upper surface of described power device 109 and described wiring 108 upper surfaces generally can reach 2mm, difference in height is larger, form the required distance of connection by described metal wire 105 larger: nation's head aloft cabling needs certain radian, and for fear of described metal wire 105 other elements of touching, the relation of vertical drop H and the fixed point horizontal range L of two nations is probably:
3H+N<L<5H+N (formula 1)
At this, N is relevant with the situation of nation's alignment of use and nation's head of nation's line equipment, for general power device, can use the aluminum steel of 300～450 μ m and corresponding nation head thereof to carry out nation's line operation, now, the value of N should, lower than 3mm, therefore not need to make L>1.4H+3mm, and the qualification rate of guarantee nation alignment meets volume production needs, as: in the time that H is 1mm, L need to reach 6mm, and in the time that H is 2mm, L need to reach 9mm.
For current a kind of Intelligent Power Module, it has 6 power devices, each power device need to be corresponding with it wiring keep distance more than 10.2mm, greatly increase undoubtedly the area of Intelligent Power Module, improve the manufacturing cost of Intelligent Power Module, all had higher requirement for follow-up electric-controlled plate design etc.; And the two nations too high height difference H of fixing a point can cause nation alignment drop to increase, when Intelligent Power Module is molded, easily cause breast the tape, the defect such as off-line.If generation off-line can detect in the time that testing equipment is tested; And if breast the tape because nation's alignment is still connected with nation fixed point, will be difficult to detect by testing equipment, in use procedure for a long time, nation's alignment that this speciogenesis is breasted the tape finally can come off, and causes greatly reduce the useful life of Intelligent Power Module.Because power device belongs to the Primary Component of Intelligent Power Module, for driving the mechanical, electrical machine of subsequent compression etc., the off-line meeting out of control of power device cause subsequent compression machine or motor out of control, when serious, can there is the situations such as equipment burnout;
Finally, because height difference H is larger, for having relatively high expectations of nation's Wiring technology, the control of nation's linear pressure, ultrasonic energy is very strict, produce the Intelligent Power Module of existing design, often need to buy expensive nation's line equipment, this has also further improved the manufacturing cost of existing Intelligent Power Module undoubtedly.
Summary of the invention
The present invention is intended to solve the deficiencies in the prior art, provide a kind of conductive materials that utilizes to make wiring layer form with substrate the hybrid integrated circuit module being electrically connected, solve that power device and difference in height wiring cross that conference causes that nation's alignment is breasted the tape, off-line and cause finished product rate, problem that reliability is low.
The present invention is achieved in that a kind of hybrid integrated circuit module, comprising:
Wherein a surface coverage has the substrate of insulating barrier;
The glass-fiber-plate arranging in the surface of described insulating barrier, wherein, this glass-fiber-plate offers through hole in predeterminated position;
Be provided with the radiator that passes this through hole and expose to described glass-fiber-plate surface in the surface location of the relatively described through hole of described insulating barrier;
The wiring layer forming in described glass-fiber-plate surface;
Be disposed in power component and the non-power element that is disposed in described wiring layer relevant position on described radiator;
For connecting the metal wire of described wiring layer, described radiator, described power component and described non-power element.
The beneficial effect of above-mentioned hybrid integrated circuit module is: because radiator is arranged in the through hole of glass-fiber-plate, and the height of radiator is only slightly high than the height of glass-fiber-plate, radiator and to be assemblied in the height of the wiring on the aspect ratio glass-fiber-plate of the power component on radiator slightly high, therefore radiator and wiring layer, distance between power component and wiring can be very little, significantly reduce the area of Intelligent Power Module, reduce the cost of raw material of Intelligent Power Module, improve the contact reliability of nation's fixed point, the difference in height that shortens the length of nation alignment and reduce nation's alignment can effectively reduce the probability of breasting the tape when molded, thereby manufacture qualification rate and the long-term reliability of Intelligent Power Module are got a promotion.
The manufacture method that another object of the present invention is to provide a kind of hybrid integrated circuit module, comprises the following steps:
Make the glass-fiber-plate that substrate, radiator and predeterminated position offer through hole, and in the wherein operation of a surface coverage insulating barrier of described substrate;
On the surface of described insulating barrier, described glass-fiber-plate and radiator are set, make described radiator pass described through hole to expose to the operation on described glass-fiber-plate surface;
Lay the operation of wiring layer in described glass-fiber-plate surface;
Arrange respectively power component and non-power element on described radiator and the operation of described wiring layer relevant position;
In the operation of described wiring layer, described radiator, described power component and described non-power interelement connection metal line.
The manufacture method that another object of the present invention is to provide a kind of hybrid integrated circuit module, comprises the following steps:
Make the operation of substrate;
Make the glass-fiber-plate that predeterminated position offers through hole, and lay the operation of wiring layer in described glass-fiber-plate surface;
Make radiator, and arrange the operation of power component on described radiator;
Configuration non-power element is in the operation of described wiring layer relevant position;
On described substrate, smear insulating barrier, and on the surface of described insulating barrier, described glass-fiber-plate and described radiator are set, make described radiator pass described through hole to expose to the operation on described glass-fiber-plate surface;
In the operation of described wiring layer, described radiator, described power component and described non-power interelement connection metal line.
The manufacture method beneficial effect of above-mentioned hybrid integrated circuit module is: do not increasing under the prerequisite of production process, reduce the difficulty of nation's line by reducing the difference in height of nation's fixed point, can meet production engineering specifications without the expensive nation's line equipment of buying, reduce the manufacturing cost of Intelligent Power Module, improved the production efficiency of Intelligent Power Module.
Brief description of the drawings
The plan structure schematic diagram that Fig. 1 (A) is existing Intelligent Power Module;
Fig. 1 (B) is X-X ' the line profile of Fig. 1 (A);
Fig. 2 (A) is the vertical view of the hybrid integrated circuit module that provides of the embodiment of the present invention;
Fig. 2 (B) is the profile along X-X ' line in Fig. 2 (A);
Fig. 2 (C) is the section plan of Fig. 2 (A);
Fig. 3 (A), 3(B) be the operation that substrate is provided in the manufacture method that provides of the embodiment of the present invention;
Fig. 4 (A), 4(B) be the operation that glass-fiber-plate is provided in the manufacture method that provides of the embodiment of the present invention;
Fig. 5 (A), 5(B) be the operation that wiring is provided on glass-fiber-plate surface in the manufacture method that provides of the embodiment of the present invention;
Fig. 6 is the operation that radiator is provided in the manufacture method that provides of the embodiment of the present invention;
Fig. 7 (A), 7(B) be the operation that power component is provided in the manufacture method that provides of the embodiment of the present invention on radiator;
Fig. 8 (A), 8(B) be the operation that pin is provided in the manufacture method that provides of the embodiment of the present invention;
Fig. 9 (A), 9(B) be that the embodiment of the present invention provides the operation that non-power element and pin are set on wiring in manufacture method;
Figure 10 (A), 10(B) be that the embodiment of the present invention provides and insulating barrier is set in manufacture method on substrate and radiator is set in the operation of insulating barrier;
Figure 11 (A), 11(B) be the operation that the embodiment of the present invention provides welded wire in manufacture method;
Figure 12 is that inventive embodiments provides the sealing process in manufacture method.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
In conjunction with Fig. 2 (A), 2(B), 2(C), as a kind of hybrid integrated circuit module 10 in an embodiment, it comprises substrate 16, insulating barrier 17, glass-fiber-plate 21(glass mat), radiator 13, wiring layer 18, power component 19, non-power element 14 and metal wire 15.
A wherein surface coverage of substrate 16 has insulating barrier 17; Glass-fiber-plate 21 is arranged at the surface of insulating barrier 17, and wherein, this glass-fiber-plate 21 offers through hole 22 in predeterminated position; Radiator 13 is arranged at the surface location of insulating barrier 17 relative through holes 22, and this radiator 13 passes this through hole 12 and exposes to glass-fiber-plate 21 surfaces; Wiring layer 18 is formed at glass-fiber-plate 17 surfaces; Power component 19 is disposed on radiator 13, and non-power element 14 is disposed in wiring layer 18 relevant position; Metal wire 15 is for connecting circuit wiring layer 18, radiator 13, power component 19 and non-power element 14.
Further, in one embodiment, hybrid integrated circuit module 10 also comprises pin 11, and wiring layer 18 comprises that pin 11 is connected and stretches out from substrate 16 with pin pad 18A near the pin pad 18A of the marginal surface of substrate 16.
Further, in one embodiment, hybrid integrated circuit module 10 also comprises sealant 12, and sealant is coated on all surface being coated with in substrate 16 beyond the surf zone that insulating barrier 17 is relative, i.e. all surface except the bottom surface shown in Fig. 2 (B).
In the present embodiment, substrate 16 is the rectangular plates that are made up of the aluminium of the materials such as 1100.In order to improve the corrosion resistance of sheet material, effects on surface carries out anodic oxidation sometimes, in order to save manufacturing cost, to the less demanding application scenario of corrosion resistance, also can only carry out wire drawing processing to aluminium material surface at some, and the thickness of substrate 16 can be selected 1.5mm.
Insulating barrier 17 can use red glue, when preservation, refrigerates, and recovers to form and partly melt state after a few hours under normal temperature, there is certain mobility, can spread upon the surface of solids and form thin layer, there is certain adhesion, the position can be used between stacked placement solid is fixed, through high temperature after coagulation.In order to improve thermal diffusivity, can use high concentration to fill the red glue kind of the fillers such as aluminium oxide, improve thermal conductivity.
Glass-fiber-plate 21 uses fiberglass sheet material cutting to form, and size is consistent with substrate 16, opens the through hole 22 of some at the ad-hoc location of the glass-fiber-plate 21 of rectangle, and in the present embodiment, what open is 6 through holes, and the large I of through hole 22 is designed to 7mm × 5mm.In addition, in the present embodiment, four angles of glass-fiber-plate 21 are designed to right angle; In addition, because glass-fiber-plate 21 is generally more crisp, so fillet also can be considered to be designed in four angles.
Wiring layer 18 is made up of metals such as copper, is formed at the ad-hoc location on glass-fiber-plate 21, according to power needs, can be designed to the thickness of 0.035mm or 0.07mm etc., for general hybrid integrated circuit module 10, pays the utmost attention to and is designed to 0.07mm.In addition, at the edge of glass-fiber-plate 21, be formed with the pin pad 18A being formed by wiring layer 18.At this, the pin pad 18A that multiple alignings are arranged is set near one side of glass-fiber-plate 21.According to function needs, the pin pad 18A that multiple alignings are arranged also can be set near multiple limits of glass-fiber-plate 21.
Radiator 13 is made up of copper material, is connected effect in order to improve with power device 19, and silver-plated processing can be carried out in surface, and the thickness of silver can be 4-6 μ m.The size of radiator 13 is determined according to the size of power device 19 and the thermal capacitance size needing.In the present embodiment, being designed to area 6mm × 4mm, is highly 1.1mm.At this, what the cross-sectional area of the horizontal direction of radiator 13 need to be than through hole 22 is smaller, and the vertical height of radiator 13 in substrate 16 directions need to than glass-fiber-plate 21, the vertical height in substrate 16 directions be slightly high.For example, radiator 13 is provided with the surface of power component 19 and the surperficial vertical drop of wiring layer 18 is 0.03 ± 0.01mm, and the surperficial vertical drop of the surface that power component 19 is relative with radiator 13 and wiring layer 18 is 0.1 ± 0.02mm.
Non-power element 14 is fixed on and on wiring 18, forms default circuit.Non-power element 14 adopts the passive component such as the active elements such as integrated circuit, transistor or diode or electric capacity or resistance.At this, the active element of the installation that faces up etc. is connected with wiring layer 18 by metal wire 15.
Power component 19 is fixed on radiator 13.Power component 19 is IGBT pipe, high-voltage MOSFET .(Metal-Oxide-Semiconductor Field Effect Transistor, mos field effect transistor) pipe, high pressure FRD(Fast Recovery Diode, fast recovery diode) element such as pipe grade.At this, radiator 13 and power component 19 are connected with wiring 18 etc. by metal wire 15.
Metal wire 15 can be aluminum steel, gold thread or copper cash, surely make between each power component 19, between each non-power element 14, set up electrical connection between each wiring layer 18, sometimes also between pin 11 and wiring layer 18 or power component 19, non-power element 14, set up electrical connection for making by nation.In the time that metal wire is aluminum steel, the diameter span of the metal wire being connected between wiring layer 18 and radiator 13 and power component 19 is: 350 μ m～400 μ m; The diameter span of the metal wire 15 being connected between wiring layer 18 and non-power element 14 is: 38 μ m～200 μ m.
Pin 11 is fixed on the pin pad 18A that is located at 16 1 edges of substrate, and it has the effect of inputting, exporting with outside.At this, be designed to be provided with many pins 11 on one side, pin 11 and pin pad 18A are by the electrical binding agent welding of the conductions such as scolding tin.The general metals such as copper that adopt of pin 11 are made, and copper surface is by chemical plating and electroplate and form one deck nickeltin layer, and the thickness of alloy-layer is generally 5 μ m, and coating can be protected the copper oxidation that is not corroded, and can improve weldability.
Sealant 12 can use the molded injection mould mode that also can use of thermosetting resin to use thermoplastic resin molded by transfer die mode.At this, all elements on complete hermetic sealing substrate 16 upper surfaces of sealant 12, and require high hybrid integrated circuit module 10 for compactness, generally can also carry out encapsulation process to the entirety of substrate 16.In the present embodiment, in order to improve the thermal diffusivity of Intelligent Power Module, the back side of described circuit substrate 16 expose.
In conjunction with Fig. 3 to Figure 12, the manufacture method of the hybrid integrated circuit module in an embodiment comprises:
Make the glass-fiber-plate 21 that substrate 16, radiator 13 and predeterminated position offer through hole 22, and in the wherein operation of a surface coverage insulating barrier 18 of described substrate 16; Described glass-fiber-plate 21 and radiator 13 are set on the surface of described insulating barrier 18, make described radiator 13 pass described through hole 22 to expose to the operation on described glass-fiber-plate 21 surfaces; Lay the operation of wiring layer 18 in described glass-fiber-plate 21 surfaces; Arrange respectively power component 19 and non-power element 14 on described radiator 13 and the operation of described wiring layer 18 relevant position; The operation of connection metal line 15 between described wiring layer 18, described radiator 13, described power component 19 and described non-power element 14.
The manufacture method of the hybrid integrated circuit module in another embodiment, comprising: the operation of making substrate 16; Make the operation that predeterminated position offers the glass-fiber-plate 21 of through hole 22 and lays wiring layer 18 in described glass-fiber-plate 21 surfaces; Make radiator 13, and arrange the operation of power component 19 on described radiator 13; Configuration non-power element 14 is in the operation of described wiring layer 18 relevant position; On described substrate 16, smear insulating barrier 18, and on the surface of described insulating barrier 18, described glass-fiber-plate 21 and described radiator 13 are set, make described radiator 13 pass described through hole 22 to expose to the operation on described glass-fiber-plate 21 surfaces; The operation of connection metal line 15 between described wiring layer 18, described radiator 13, described power component 19 and described non-power element 14.
It should be noted that, each operation in the manufacture method of above-mentioned two hybrid integrated circuit modules is also nonessential according to its execution that puts in order in the process of operation, but each operation can exchange or synchronously carry out according to actual conditions.For example, substrate 16, the production process of glass-fiber-plate 21, radiator 13 can exchange sequence or synchronous execution, and other operations are by that analogy.
Further, in one embodiment, described wiring layer 18 comprises the described pin pad 18A near the marginal surface of described substrate 16, after laying the operation of wiring layers 18, be set forth in glass-fiber-plate 21 surfaces also comprise: pin 11 is set, and described pin 11 is connected and from the outward extending operation of described substrate 16 with described pin pad 18A.
Further, in one embodiment, after the operation of connection metal line 15, also comprise between wiring layer 18, described radiator 13, described power component 19 and described non-power element 14 described: by the operation of the sealing of all surface except the surface relative with being coated with described insulating barrier 18 in described substrate 16.
Further, in one embodiment, also comprise after the operation of described wiring layer 18 relevant position at described configuration non-power element 14: the operation of cleaning described glass-fiber-plate 21.
In more detailed embodiment, each operation of the manufacture method of hybrid integrated circuit module is described in detail, as follows:
With reference to Fig. 3, it is the operation that forms substrate 16 in the operation of the sizeable aluminium base of formation in an embodiment.
First, with reference to Fig. 3 (A) with along the sectional view 3(B of the X-X ' line of Fig. 3 (A)), the suitable substrate 16 of designed size of hybrid integrated circuit module 10 as required, for general hybrid integrated circuit module, the size of substrate 16 can be chosen 64mm × 30mm, thickness is 1.5mm, and two sides is carried out as anodised corrosion protection processing.
At this, the formation of sizeable substrate 16 is that the mode by directly the aluminium of 1m × 1m × 1.5mm being carried out to the processing of gong plate forms, and gong cutter uses high-speed steel as material, and motor uses the rotating speed of 5000 revs/min, and gong cutter and aluminium plane are at right angles descended cutter; Also can form by the mode of punching press.
With reference to figure 4(A), 4(B), 5(A) and 5(B), be that making predeterminated position in an embodiment offers the glass-fiber-plate 21 of through hole 22 and lays the operation of wiring layers 18 in described glass-fiber-plate 21 surfaces.
First with reference to figure 4(A) and profile Fig. 4 (B) of the X-X' section of Fig. 4 (A), the suitable glass-fiber-plate 21 of hybrid integrated circuit module 10 designed size as required, can make with substrate 16 in the same sizely, i.e. 64mm × 30mm, also can be more smaller than substrate 16 areas.
Then, by modes such as milling cutter, punching presses, form through hole 22 at ad-hoc location, in the present embodiment, formed 6 right angle pylones 22, the size of through hole is 7mm × 5mm, as required; The through hole 22 that also can form other quantity, size, through hole 22 also can be made fillet.At this, the thickness of glass-fiber-plate 21 is generally 1mm.
Finally, with reference to figure 5(A) and profile Fig. 5 (B) of the X-X' section of Fig. 5 (A), be pasted with the Copper Foil as conductive pattern on the surface of institute's glass-fiber-plate 21.Then the Copper Foil of this operation manufacture is carried out to etching, remove partly Copper Foil, form wiring layer 18, and form special wiring layer 18 as pin pad 18A at least one edge of glass-fiber-plate 16.At this, Copper Foil is generally selected 2 ounces, and the height of the wiring layer 18 forming and pin pad 18A is about 0.07mm.
At this, the formation of sizeable glass-fiber-plate 21 can form by directly the glass fiber plate of 1m × 1m × 1mm being carried out to the mode such as die-cut, also can form V groove by the glass fiber plate of first 1m × 1m × 1mm, and the mode of then shearing forms.
With reference to figure 6, Fig. 7 (A) and 7(B), be the making radiator 13 in an embodiment, and arrange the operation of power component 19 on described radiator 13;
Referring to Fig. 6, each radiator 13 is to use copper base material, by punching press or etched mode, make cuboid as shown in Figure 6. in the present embodiment, the area of radiator 13 is designed to L*W=6mm × 4mm, also can be as required, be designed to the size less than through hole 22, the height H of radiator 13 is designed to 1.1mm, also can be designed to as required than the slightly large size of glass-fiber-plate 21 thickness.In order to improve the wettability of follow-up welding process, can form silver layer by the method for chemical plating; According to the situation on copper layer surface, before silver-plated, can first carry out the processing such as oil removing, deoxidation layer, chemical bright dipping, just form described radiator 13.
Referring to profile Fig. 7 (B) of the X-X' section of Fig. 7 (A) and Fig. 7 (A), first, radiator 13 is heated, and drop in radiator 13 surfaces by dissolving high temperature solder stick, at this, can select melt temperature is the high temperature solder stick of 310 DEG C of left and right.Then, place power component 19 to dissolving and being dispersed on the solder stick on radiator 13 surfaces, flatten, cooling, after high temperature solder stick solidifies, power component 19 is just fixed on described radiator 13 surfaces.In the present embodiment, the height of the power component 19 of use is 0.07mm.
The second operation: with reference to Fig. 8 (A) and Fig. 8 (B), be in an embodiment, make the independently operation of the pin 11 with coating.
Each pin 11 is to use copper base material, by punching press or etched mode, makes the row's pin 11 as shown in Fig. 8 (A).In the present embodiment, pin 11 is connected by reinforcement by 12 independent pin Unit 11.As shown in Fig. 4 (B), independent pin 11 is that length L 1 is 25mm, and width W 1 is 1.5mm, the strip that thickness H1 is 1mm; Sometimes,, for ease of assembling, also wherein suppress certain radian in one end at pin 11;
Then form nickel dam by the method for chemical plating: by nickel salt and inferior sodium phosphate mixed solution, and add suitable complexing agent, form nickel dam on the copper material surface that forms given shape, there is very strong passivation ability at metallic nickel, one deck passivating film as thin as a wafer can be generated rapidly, the corrosion of atmosphere, alkali and some acid can be resisted.Nickel plating crystallization is superfine little, and nickel layer thickness is generally 0.1 μ m;
Then by hydrosulphate technique; at room temperature the copper material that forms shape and nickel dam is immersed in the plating solution with positive tin ion and switches on; form nickeltin layer on nickel dam surface, alloy-layer general control is at 5 μ m, and the formation of alloy-layer has greatly improved protectiveness and solderability.
With reference to figure 9(A) and 9(B), be at the surface-mounted non-power element 14 of wiring layer 18 with in the operation of the surface-mounted pin 11 of pin pad 18A in an embodiment.
First, by stencil printer, use steel mesh, the ad-hoc location to the wiring layer 18 on glass-fiber-plate 21 and pin pad 18A carry out tin cream application; At this, climb tin height in order to improve, can use the steel mesh of 0.15mm thickness, the risk being shifted in order to reduce described non-power element 14, can be used the steel mesh of 0.12mm thickness.
Then, with reference to end view Fig. 9 (A) and vertical view Fig. 9 (B), carry out the installation of non-power element 14 and pin 11, non-power element 14 can directly be placed on the ad-hoc location of wiring layer 18, pin 11 one end will be placed on pin pad 18A, the other end needs carrier 20 to be fixed, and carrier 20 is made by materials such as synthetic stones.Then, be put in glass-fiber-plate 21 on carrier 20 by Reflow Soldering, tin cream solidifies, and non-power element 14 and pin 11 are fixed.At this, can select solution temperature is the tin cream of 280 DEG C.
In a preferred embodiment, the manufacture method of hybrid integrated circuit module also comprises the operation of cleaning glass-fiber-plate 21.
Glass-fiber-plate 21 is put into cleaning machine to be cleaned, during by Reflow Soldering, the foreign matter such as residual aluminum steel is cleaned when the scaling powder such as residual rosin and punching press, the density of arranging according to non-power element 14 at wiring layer 18, cleaning can be undertaken by the form of spray or ultrasonic or both combinations.When cleaning, clamp described pin 11 by mechanical arm, glass-fiber-plate 21 is placed in to rinse bath, and to note not allowing mechanical arm touch glass-fiber-plate 21, because glass-fiber-plate 21 enbrittles, if mechanical arm clamping glass-fiber-plate 21, the vibrations that produce in the time cleaning, easily cause glass-fiber-plate 21 to collapse damage.
With reference to figure side view cutaway drawing 10(A) and vertical view cutaway drawing 9(B), be on described substrate 16, to smear insulating barrier 18 in an embodiment, and described glass-fiber-plate 21 and described radiator 13 are set on the surface of described insulating barrier 18, make described radiator 13 pass described through hole 22 to expose to the operation on described glass-fiber-plate 21 surfaces.
First, smear the most described insulating cement of the dielectric red glue of one deck at substrate 16 surface uniforms and form insulating barrier 17.Then, the glass-fiber-plate cleaning up 21 that assembles non-power element 14 after above-mentioned operation is placed on to red glue surface, then the radiator 13 that assembles power component 19 is placed on to red glue surface by described through hole 22.At this, because configuration pin 11 of glass-fiber-plate 21, generally can be placed on one can be in the carrier 23 of pin 11 support effects.Finally, carrier 23 is put into baking oven and add, make red adhesive curing.At this, can select curing temperature is the red glue of 170 DEG C of left and right, and smearing of red glue highly can be 0.05mm.
Through after this operation, radiator 13 is than the high 0.03 ± 0.01mm of wiring layer 18, and described power component 19 is than the high 0.1 ± 0.02mm of described wiring layer 18.
With reference to figure side view cutaway drawing 11(A) and vertical view cutaway drawing 11(B), be in an embodiment, the operation of connection metal line 15 between described wiring layer 18, described radiator 13, described power component 19 and described non-power element 14.
According to through-current capability needs, select the aluminum steel of suitable diameter as nation's alignment (metal wire 15), for the integrated circuit for signal controlling, also can consider to use gold thread as nation's alignment.In the present embodiment, all select aluminum steel.In general, to surely using the aluminum steel of 350 μ m～400 μ m with the nation of power component 19, to surely using the aluminum steel of 38 μ m～200 μ m with the nation of non-power element 14, to surely using the aluminum steel of 350 μ m～400 μ m with the nation of radiator 13.
Because radiator 13 and power component 19 are very little with the difference in height of wiring layer 18, can ignore compared with N in (formula 1), the distance between radiator 13 and power component 19 and wiring layer 18 is determined by N, i.e. 3mm(millimeter).Because nation's line difference in height is little, nation's linear distance is short, uses general domestic aluminum steel nation line machine just can complete the work of this operation.
Reference section Figure 12, in a preferred embodiment, the manufacture method of hybrid integrated circuit module also comprises the operation of the sealing of all surface except the surface relative with being coated with described insulating barrier in described substrate.
In oxygen-free environment, substrate 16 is toasted, baking time should not be less than 2 hours, 125 DEG C of baking temperature and selections.Substrate 16 conveyances that configure pin 11 are arrived to model 44 and 45.Contact with fixture 46 by the specific part that makes pin 11, carry out the location of substrate 16.When matched moulds, in the die cavity that is formed at mould 50 inside, place substrate 16, then inject sealing resin by cast gate 53.The method sealing can adopt and use the transfer die injection mould molded or use thermosetting resin of thermosetting resin molded.And the gas of the corresponding sealing resin die cavity inside of injecting from cast gate 53 is discharged into outside by exhaust outlet 54.
At this, the back side of substrate 16 is close on counterdie 45, but still has between the back side and counterdie 45 that a small amount of described sealing resin enters into substrate 16.Therefore, after the demoulding, need to carry out laser-induced thermal etching or grinding, a small amount of sealing resin that remains in substrate 16 back sides is removed, the back side of substrate 16 is exposed from sealing resin, and the sealed resin sealing of part beyond the back side of substrate 16.
In a preferred embodiment, the manufacture method of hybrid integrated circuit module also comprises the operation of carrying out pin 11 Trim Moldings and carrying out functions of modules test, and above-mentioned hybrid integrated circuit module 10 completes as goods through operation thus.
Be that transfer die mould dress operation is all sealed other parts except pin 11 by resin in front operation.This operation, according to the length and the shape needs that use, is cut off a part for external pin 11, sometimes also can be bent into definite shape, is convenient to follow-up assembling.Then hybrid integrated circuit module 10 is put into testing equipment, carry out conventional electric parameters testing, generally comprise the test events such as dielectric voltage withstand, quiescent dissipation, delay time, test passes person is finished product.
Utilize above-mentioned operation, complete the Intelligent Power Module 10 shown in Fig. 2.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (14)
1. a hybrid integrated circuit module, is characterized in that, comprising:
Wherein a surface coverage has the substrate of insulating barrier;
The glass-fiber-plate arranging in the surface of described insulating barrier, wherein, this glass-fiber-plate offers through hole in predeterminated position;
Be provided with the radiator that passes this through hole and expose to described glass-fiber-plate surface in the surface location of the relatively described through hole of described insulating barrier;
The wiring layer forming in described glass-fiber-plate surface;
Be disposed in power component and the non-power element that is disposed in described wiring layer relevant position on described radiator;
For connecting the metal wire of described wiring layer, described radiator, described power component and described non-power element.
2. hybrid integrated circuit module as claimed in claim 1, is characterized in that, also comprises pin, and described wiring layer comprises that described pin is connected and stretches out from described substrate with described pin pad near the pin pad of the marginal surface of described substrate.
3. hybrid integrated circuit module as claimed in claim 1 or 2, is characterized in that, also comprises sealant, and described sealant is coated on all surface being coated with in described substrate beyond the surf zone that described insulating barrier is relative.
4. hybrid integrated circuit module as claimed in claim 1 or 2, is characterized in that, described power device is IGBT pipe, high-voltage MOSFET pipe or high pressure FRD pipe.
5. hybrid integrated circuit module as claimed in claim 1 or 2, it is characterized in that, described radiator is provided with the surface of described power component and the surperficial vertical drop of described wiring layer is 0.03 ± 0.01mm, and the surperficial vertical drop of the surface that described power component is relative with described radiator and wiring layer is 0.1 ± 0.02mm.
6. hybrid integrated circuit module as claimed in claim 1 or 2, is characterized in that, the diameter span of the metal wire being connected between described wiring layer and described radiator and described power component is: 350 μ m～400 μ m; Described wiring layer with the diameter span of the described metal wire that described non-power interelement is connected is: 38 μ m～200 μ m.
7. a manufacture method for hybrid integrated circuit module, is characterized in that, comprising:
Make the glass-fiber-plate that substrate, radiator and predeterminated position offer through hole, and in the wherein operation of a surface coverage insulating barrier of described substrate;
On the surface of described insulating barrier, described glass-fiber-plate and radiator are set, make described radiator pass described through hole to expose to the operation on described glass-fiber-plate surface;
Lay the operation of wiring layer in described glass-fiber-plate surface;
Arrange respectively power component and non-power element on described radiator and the operation of described wiring layer relevant position;
In the operation of described wiring layer, described radiator, described power component and described non-power interelement connection metal line.
8. the manufacture method of hybrid integrated circuit module as claimed in claim 7, it is characterized in that, described wiring layer comprises the described pin pad near the marginal surface of described substrate, after laying the operation of wiring layer, be set forth in described glass-fiber-plate surface also comprises: pin is set, described pin is connected with described pin pad and from the outward extending operation of described substrate.
9. the manufacture method of hybrid integrated circuit module as claimed in claim 7 or 8, it is characterized in that, also comprise after the operation of wiring layer, described radiator, described power component and described non-power interelement connection metal line described: will in described substrate, be coated with the operation of all surface sealing beyond the surf zone that described insulating barrier is relative.
10. the manufacture method of hybrid integrated circuit module as claimed in claim 7 or 8, is characterized in that, also comprises: the operation of cleaning described glass-fiber-plate at described configuration non-power element after the operation of described wiring layer relevant position.
The manufacture method of 11. 1 kinds of hybrid integrated circuit modules, is characterized in that, comprising:
Make the operation of substrate;
Make the glass-fiber-plate that predeterminated position offers through hole, and lay the operation of wiring layer in described glass-fiber-plate surface;
Make radiator, and arrange the operation of power component on described radiator;
Configuration non-power element is in the operation of described wiring layer relevant position;
On described substrate, smear insulating barrier, and on the surface of described insulating barrier, described glass-fiber-plate and described radiator are set, make described radiator pass described through hole to expose to the operation on described glass-fiber-plate surface;
In the operation of described wiring layer, described radiator, described power component and described non-power interelement connection metal line.
The manufacture method of 12. hybrid integrated circuit modules as claimed in claim 11, it is characterized in that, described wiring layer comprises the described pin pad near the marginal surface of described substrate, after laying the operation of wiring layer, be set forth in described glass-fiber-plate surface also comprises: pin is set, described pin is connected with described pin pad and from the outward extending operation of described substrate.
The manufacture method of 13. hybrid integrated circuit modules as described in claim 11 or 12, it is characterized in that, also comprise after the operation of wiring layer, described radiator, described power component and described non-power interelement connection metal line described: by the operation of the sealing of all surface except the surface relative with being coated with described insulating barrier in described substrate.
The manufacture method of 14. hybrid integrated circuit modules as described in claim 11 or 12, is characterized in that, also comprises: the operation of cleaning described glass-fiber-plate at described configuration non-power element after the operation of described wiring layer relevant position.
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| CN104752373B (en) * | 2015-03-23 | 2018-10-23 | 广东美的制冷设备有限公司 | intelligent power module and its manufacturing method |
| CN107466424A (en) * | 2016-04-06 | 2017-12-12 | 新电元工业株式会社 | Power model |
| CN107466424B (en) * | 2016-04-06 | 2020-07-17 | 新电元工业株式会社 | Power module |
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| CN104112719B (en) | 2017-02-08 |
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