CN104112719B - Hybrid integrated circuit module and manufacturing method thereof - Google Patents
Hybrid integrated circuit module and manufacturing method thereof Download PDFInfo
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- CN104112719B CN104112719B CN201310371563.7A CN201310371563A CN104112719B CN 104112719 B CN104112719 B CN 104112719B CN 201310371563 A CN201310371563 A CN 201310371563A CN 104112719 B CN104112719 B CN 104112719B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
Provided is a hybrid integrated circuit module and a manufacturing method thereof. The manufacturing method comprises the steps that a substrate, a heat radiator and a glass fiber plate with through holes arranged at preset positions are manufactured, and an insulating layer is covered on one of the surfaces of the substrate; the glass fiber plate and the heat radiator are arranged on the surface of the insulating layer; a circuit wiring layer is arranged on the surface of the glass fiber plate; power elements and non-power elements are respectively distributed on the heat radiator and the corresponding positions of the circuit wiring layer; and metal wires are connected between the circuit wiring layer, the heat radiator, the power elements and the non-power elements. Contact reliability of bonding points is enhanced, length of bonding wires is reduced and height difference of the bonding wires is reduced so that wire punching rate in molding can be effectively reduced, and thus qualified rate of manufacturing and long-term reliability of an intelligent power module are enhanced.
Description
Technical field
The invention belongs to electronic device manufacturing process area, more particularly, to a kind of hydrid integrated circuit module and its manufacturer
Method.
Background technology
SPM (Intelligent Power Module, IPM) is a kind of by power electronics and integrated circuit
The power drive class product that technology combines.IPM integrates device for power switching and high-voltage driving circuit, and interior keeps
Voltage, overcurrent and the failure detector circuit such as overheated.IPM mono- aspect receives the control signal of MCU, drives subsequent conditioning circuit work,
On the other hand the state detection signal of system is sent back to MCU.Compared with traditional discrete scheme, IPM is with its high integration, highly reliable
Property etc. advantage win increasing market, be particularly suitable for the converter of motor and various inverter, be become frequency modulation
Speed, metallurgical machinery, electric propulsion, servo-drive, a kind of desired power level electronic device of frequency-conversion domestic electric appliances.
The structure of existing SPM 100 is described with reference to Fig. 1.Fig. 1 (A) is bowing of described SPM 100
View, Fig. 1 (B) is X-X ' the line profile of Fig. 1 (A).
Described SPM 100 has following structure, and it includes：Circuit aluminium base 106；Located at described aluminium base
The described wiring 108 being formed on insulating barrier 107 on 106 surfaces；It is fixed on the non-power on described wiring 108
Element 104；It is fixed on radiator 103 on described wiring 108；It is fixed on the power component on described radiator 103
109；Connect the metal wire 105 of non-power element 104, described power component 109 and described wiring 108；With described circuit
The pin 101 of wiring 108 connection；At least one side of described aluminium base 106 is sealed by sealing resin 102, in order to improve sealing,
Aluminium base 106 all can be sealed, in order to improve thermal diffusivity, the back side of described aluminium base 106 can be made to be exposed to the state of outside
Under sealed.
Described SPM 100 typically can be operated in severe operating mode, such as the off-premises station of convertible frequency air-conditioner, summer
When operating ambient temperature up to 50 DEG C, and described power component 109, such as IGBT (Insulated Gate Bipolar
Transistor, insulated gate bipolar transistor) etc., substantial amounts of heat, the temperature of described power component 109 can occur in work process
Up to more than 120 DEG C, in order to improve thermal diffusivity, described radiator 103 typically can be made comparison thick (generally 1mm～2mm) to degree,
Plus the thickness (generally 0.07mm～0.2mm) of described power component 109 itself, therefore, the upper table of described power component 109
Face typically can reach 2mm with the difference in height of described wiring 108 upper surface, and difference in height is bigger, by described metal wire 105 shape
Become to connect required distance bigger：Nation's head certain radian of cabling needs in the air, and in order to avoid described metal wire 105 touches
Touch other elements, vertical drop H is about with the relation of two binding point horizontal ranges L：
3H+N<L<5H+N (formula 1)
Here, N is relevant with the situation of the bonding line using and nation's head of nation's line equipment, for general power component, meeting
Carry out nation's line operation using 300～450 μm of aluminum steels and its corresponding nation head, now, the value of N be not lower than 3mm it is therefore desirable to
Make L>1.4H+3mm, the qualification rate of guarantee bonding line meets volume production needs, such as：When H is for 1mm, L needs to reach 6mm,
When H is 2mm, L needs to reach 9mm.
For a kind of current SPM, it has 6 power components, and each power component needs corresponding
Wiring keeps the distance of more than 10.2mm, the area of SPM has undoubtedly been significantly greatly increased, has improve SPM
Manufacturing cost, higher requirement is proposed for follow-up electric-controlled plate design etc.；And, the too high height difference H of two binding point
Bonding line drop can be caused to increase, easily cause when SPM moulds breast the tape, the defect such as off-line.If it happens
Off-line, can detect when test equipment is tested；And if it happens breast the tape, because bonding line is still connected with binding point, by difficulty
To be detected by test equipment, during life-time service, this bonding line breasted the tape eventually falls off, and leads to intelligence
The service life of energy power model substantially reduces.Because power component belongs to the Primary Component of SPM, for driving
Mechanical, electrical machine of subsequent compression etc., the off-line of power component is out of control to cause subsequent compression machine or motor out of control, can set when serious
For situations such as burning；
Finally, because height difference H is larger, the requirement for nation's Wiring technology is higher, nation's line pressure, ultrasonic energy control non-
Chang Yange, will produce the SPM of current designs scheme, generally require to buy expensive nation's line equipment, this is undoubtedly
Also further increase the manufacturing cost of existing SPM.
Content of the invention
Present invention seek to address that the deficiencies in the prior art, one kind is provided to make circuit-wiring layer and substrate shape using conductive materials
Become the hydrid integrated circuit module of electrical connection, the difference in height with wiring of solution power component is crossed conference and leads to bonding line to rush
Line, off-line and cause the low problem of finished product rate, reliability.
The present invention is achieved in that a kind of hydrid integrated circuit module, including：
Wherein one surface is coated with the substrate of insulating barrier；
In the glass-fiber-plate of the surface setting of described insulating barrier, wherein, this glass-fiber-plate offers through hole in predeterminated position；
Surface location in the relatively described through hole of described insulating barrier is provided with and passes this through hole and expose to described glass-fiber-plate
The radiator on surface；
The circuit-wiring layer being formed in described glass plate surface；
The power component being disposed on described radiator and the non-power unit being disposed in described circuit-wiring layer relevant position
Part；
For connecting the metal of described circuit-wiring layer, described radiator, described power component and described non-power element
Line.
The beneficial effect of above-mentioned hydrid integrated circuit module is：Because radiator is arranged in the through hole of glass-fiber-plate, and dissipate
The height of hot device is only slightly higher than the height of glass-fiber-plate, the aspect ratio glass-fiber-plate of radiator and assembling power component on a heat sink
On wiring height slightly higher, therefore the distance between radiator and circuit-wiring layer, power component and wiring is permissible
Very little, significantly reduce the area of SPM, reduce the cost of raw material of SPM, improve bonding
The contact reliability of point, the length shortening bonding line and the difference in height reducing bonding line can effectively reduce breasts the tape during molding
Probability, so that the manufacture qualification rate of SPM and long-term reliability get a promotion.
Another object of the present invention is to providing a kind of manufacture method of hydrid integrated circuit module, comprise the following steps：
Make the glass-fiber-plate that substrate, radiator and predeterminated position offer through hole, and wherein one surface in described substrate
Cover the operation of insulating barrier；
Described glass-fiber-plate and radiator are set on the surface of described insulating barrier, make described radiator pass described through hole and expose
Operation in described glass plate surface；
Lay the operation of circuit-wiring layer in described glass plate surface；
Arrange power component and non-power element respectively on described radiator and described circuit-wiring layer relevant position
Operation；
Connect metal wire in described circuit-wiring layer, described radiator, described power component and described non-power interelement
Operation.
Another object of the present invention is to providing a kind of manufacture method of hydrid integrated circuit module, comprise the following steps：
Make the operation of substrate；
Make the glass-fiber-plate that predeterminated position offers through hole, and lay the work of circuit-wiring layer in described glass plate surface
Sequence；
Make radiator, and arrange operation on described radiator for the power component；
Configuration non-power element is in the operation of described circuit-wiring layer relevant position；
Smear insulating barrier on the substrate, and described glass-fiber-plate and described radiating are set on the surface of described insulating barrier
Device, makes described radiator pass the operation that described through hole exposes to described glass plate surface；
Connect metal wire in described circuit-wiring layer, described radiator, described power component and described non-power interelement
Operation.
The manufacture method beneficial effect of above-mentioned hydrid integrated circuit module is：On the premise of not increasing production process,
Reduce the difficulty of nation line by the difference in height reducing binding point, need not purchase costliness nation's line equipment can meet technological design will
Ask, reduce the manufacturing cost of SPM, improve the production efficiency of SPM.
Brief description
Fig. 1 (A) is the overlooking the structure diagram of existing SPM；
Fig. 1 (B) is X-X ' the line profile of Fig. 1 (A)；
Fig. 2 (A) is the top view of hydrid integrated circuit module provided in an embodiment of the present invention；
Fig. 2 (B) is the profile in Fig. 2 (A) along X-X ' line；
Fig. 2 (C) is the section plan of Fig. 2 (A)；
Fig. 3 (A), 3 (B) are the operations arranging substrate in manufacture method provided in an embodiment of the present invention；
Fig. 4 (A), 4 (B) are the operations arranging glass-fiber-plate in manufacture method provided in an embodiment of the present invention；
Fig. 5 (A), 5 (B) are the works laying wiring in manufacture method provided in an embodiment of the present invention in glass plate surface
Sequence；
Fig. 6 is the operation arranging radiator in manufacture method provided in an embodiment of the present invention；
Fig. 7 (A), 7 (B) are the works arranging power component in manufacture method provided in an embodiment of the present invention on a heat sink
Sequence；
Fig. 8 (A), 8 (B) are the operations arranging pin in manufacture method provided in an embodiment of the present invention；
Fig. 9 (A), 9 (B) be the embodiment of the present invention provide manufacture method on wiring setting non-power element and
The operation of pin；
Figure 10 (A), 10 (B) are that the embodiment of the present invention provides setting insulating barrier and setting radiating on substrate in manufacture method
Device is in the operation of insulating barrier；
Figure 11 (A), 11 (B) are the operations that the embodiment of the present invention provides welded wire in manufacture method；
Figure 12 is the sealing process that inventive embodiments provide in manufacture method.
Specific embodiment
In order that the technical problem to be solved in the present invention, technical scheme and beneficial effect become more apparent, below in conjunction with
Drawings and Examples, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
In conjunction with Fig. 2 (A), 2 (B), 2 (C), as one of embodiment hydrid integrated circuit module 10, it includes base
Plate 16, insulating barrier 17, glass-fiber-plate 21 (glass mat), radiator 13, circuit-wiring layer 18, power component 19, non-power unit
Part 14 and metal wire 15.
Wherein one surface of substrate 16 is coated with insulating barrier 17；Glass-fiber-plate 21 is arranged at the surface of insulating barrier 17, wherein, should
Glass-fiber-plate 21 offers through hole 22 in predeterminated position；Radiator 13 is arranged at the surface location of insulating barrier 17 opposing through-bores 22, and
This radiator 13 passes this through hole 12 and exposes to glass-fiber-plate 21 surface；Circuit-wiring layer 18 is formed at glass-fiber-plate 21 surface；
Power component 19 is disposed on radiator 13, and non-power element 14 is disposed in circuit-wiring layer 18 relevant position；Metal wire 15
For connecting circuit-wiring layer 18, radiator 13, power component 19 and non-power element 14.
Further, in one embodiment, hydrid integrated circuit module 10 also includes pin 11, and circuit-wiring layer 18 wraps
Include the pin pad 18A of the marginal surface near substrate 16, pin 11 is connected and from substrate 16 to extension with pin pad 18A
Stretch.
Further, in one embodiment, hydrid integrated circuit module 10 also includes sealant 12, and sealant is coated on
It is coated with substrate 16 in addition to all surface beyond the relative surface region of insulating barrier 17, the bottom surface shown in that is, except Fig. 2 (B)
All surface.
In the present embodiment, substrate 16 is the rectangular plate being made up of the aluminum of the materials such as 1100.In order to improve the corrosion resistant of sheet material
Corrosion, carries out anodic oxidation to surface sometimes, in order to save manufacturing cost, in some applications less demanding to corrosion resistance
Occasion, also only can carry out wire drawing process to aluminium material surface, and the thickness of substrate 16 can be selected for 1.5mm.
Insulating barrier 17 can use red glue, cold preservation during preservation, formed and partly melt state, have certain under room temperature after recovering a few hours
Mobility, can be applied to the surface of solids and form thin layer, have certain adhesion, can be used for being laminated the position placing between solid admittedly
Fixed, solidify after high temperature.The red glue kind of the fillers such as aluminium oxide in order to improve thermal diffusivity, can be filled using high concentration, improve
Thermal conductivity.
Glass-fiber-plate 21 is formed using fiberglass sheet material cutting, and size is consistent with substrate 16, in the glass-fiber-plate 21 of rectangle
Ad-hoc location opens a number of through hole 22, and in the present embodiment, open is 6 through holes, and the size of through hole 22 may be designed to 7mm
×5mm.Additionally, in the present embodiment, four angle designs of glass-fiber-plate 21 are at a right angle；In addition, because glass-fiber-plate 21 is typically more crisp,
So four angles are it is also contemplated that be designed to fillet.
Circuit-wiring layer 18 is made up of metals such as copper, is formed at the ad-hoc location on glass-fiber-plate 21, according to power needs, can
It is designed to the thickness of 0.035mm or 0.07mm etc., for general hydrid integrated circuit module 10, pay the utmost attention to be designed to
0.07mm.In addition, at the edge of glass-fiber-plate 21, being formed with the pin pad 18A being made up of circuit-wiring layer 18.Here, in glass
Multiple pin pad 18A being aligned with are set near one side of fine plate 21.According to function needs, also can be many in glass-fiber-plate 21
Multiple pin pad 18A being aligned with are set near individual side.
Radiator 13 is made up of copper material, and in order to improve and power component 19 connection effect, surface can carry out silver-plated process,
The thickness of silver can be 4-6 μm.Depending on the size of radiator 13 is according to the size of power component 19 and the thermal capacitance size of needs.?
In the present embodiment, it is designed to area 6mm × 4mm, highly for 1.1mm.Here, the cross-sectional area of the horizontal direction of radiator 13 needs
More smaller than through hole 22, vertical height on substrate 16 direction for the radiator 13 needs than glass-fiber-plate 21 on substrate 16 direction
Vertical height slightly higher.For example, radiator 13 be provided with power component 19 surface vertical with the surface of circuit-wiring layer 18
Difference in height is 0.03 ± 0.01mm, and power component 19 surface relative with radiator 13 is vertical with the surface of circuit-wiring layer 18
Difference in height is 0.1 ± 0.02mm.
Non-power element 14 is fixed on wiring 18 and constitutes default circuit.Non-power element 14 adopts integrated electricity
The passive element such as the active components such as road, transistor or diode or electric capacity or resistance.Here, the active unit of the installation that faces up
Part etc. is connected with circuit-wiring layer 18 by metal wire 15.
Power component 19 is fixed on radiator 13.Power component 19 is managed for IGBT, high-voltage MOSFET. (Metal-
Oxide-Semiconductor Field Effect Transistor, mos field effect transistor) pipe,
The elements such as high pressure FRD (Fast Recovery Diode, fast recovery diode) pipe.Here, radiator 13 and power component 19
It is connected with wiring 18 grade by metal wire 15.
Metal wire 15 can be aluminum steel, gold thread or copper cash, makes between each power component 19 by bonding, each non-power element
Set up electrical connection between 14, between each circuit-wiring layer 18, be sometimes additionally operable to make pin 11 and circuit-wiring layer 18 or work(
Electrical connection is set up between rate element 19, non-power element 14.When metal wire is for aluminum steel, circuit-wiring layer 18 and radiator
Between 13 and power component 19, the diameter span of the metal wire of connection is：350 μm～400 μm；Circuit-wiring layer 18 and NOT function
Between rate element 14, the diameter span of the metal wire 15 of connection is：38 μm～200 μm.
Pin 11 is fixed on the pin pad 18A at 16 1 edges of substrate, its have carry out with outside inputting,
The effect of output.Here, being designed to be provided with one side a plurality of pin 11, pin 11 and pin pad 18A pass through the conductions such as scolding tin
Electrically binding agent welding.Pin 11 is typically made using metals such as copper, and chemical plating is passed through on copper surface and plating forms one layer of nickel stannum
Alloy-layer, generally 5 μm of the thickness of alloy-layer, coating can protect copper not to be corroded oxidation, and can improve weldability.
Sealant 12 also can use thermoplastic using injection mould mode by transmitting mould mode using thermosetting resin molding
Property is resin molded.Here, sealant 12 fully seals all elements on substrate 16 upper surface, and high for consistency requirements
Hydrid integrated circuit module 10, typically can be also carried out encapsulation process to the entirety of substrate 16.In the present embodiment, in order to improve intelligence
The thermal diffusivity of power model, the back side of described circuit substrate 16 is exposed.
In conjunction with Fig. 3 to Figure 12, the manufacture method of the hydrid integrated circuit module in an embodiment includes：
Make the glass-fiber-plate 21 that substrate 16, radiator 13 and predeterminated position offer through hole 22, and in described substrate 16
Wherein one surface covers the operation of insulating barrier 17；On the surface of described insulating barrier 17, described glass-fiber-plate 21 and radiator 13 are set,
Described radiator 13 is made to pass the operation that described through hole 22 exposes to described glass-fiber-plate 21 surface；In described glass-fiber-plate 21 surface cloth
If the operation of circuit-wiring layer 18；Arrange power component 19 and non-power element 14 respectively on described radiator 13 and described electricity
The operation of road wiring layer 18 relevant position；In described circuit-wiring layer 18, described radiator 13, described power component 19 and described
The operation of metal wire 15 is connected between non-power element 14.
The manufacture method of the hydrid integrated circuit module in another embodiment, including：Make the operation of substrate 16；Make pre-
If position offers the glass-fiber-plate 21 of through hole 22 and lays the operation of circuit-wiring layer 18 in described glass-fiber-plate 21 surface；Make and dissipate
Hot device 13, and arrange operation on described radiator 13 for the power component 19；Configuration non-power element 14 is in described wiring
The operation of layer 18 relevant position；Insulating barrier 17 is smeared on described substrate 16, and described in the setting of the surface of described insulating barrier 17
Glass-fiber-plate 21 and described radiator 13, make described radiator 13 pass described through hole 22 and expose to described glass-fiber-plate 21 surface
Operation；Gold is connected between described circuit-wiring layer 18, described radiator 13, described power component 19 and described non-power element 14
Belong to the operation of line 15.
It should be noted that each operation in the manufacture method of above-mentioned two hydrid integrated circuit module is in the mistake operating
Not necessarily according to its execution that puts in order in journey, but each operation can be swapped according to practical situation or synchronization is held
OK.For example, substrate 16, glass-fiber-plate 21, the manufacturing process of radiator 13 can be executed with exchange sequence or synchronization, other operations
By that analogy.
Further, in one embodiment, described circuit-wiring layer 18 includes the marginal surface near described substrate 16
Described pin pad 18A, be set forth in glass-fiber-plate 21 surface lay circuit-wiring layer 18 operation after also include：Setting is drawn
Foot 11, and make the operation that described pin 11 is connected with described pin pad 18A and stretches out from described substrate 16.
Further, in one embodiment, described in circuit-wiring layer 18, described radiator 13, described power unit
Also include after the operation connecting metal wire 15 between part 19 and described non-power element 14：To remove in described substrate 16 and be coated with
The operation of all surface sealing outside the relative surface of described insulating barrier 17.
Further, in one embodiment, corresponding in described circuit-wiring layer 18 in described configuration non-power element 14
Also include after the operation of position：Clean the operation of described glass-fiber-plate 21.
In more detailed embodiment, detailed retouching is carried out to each operation of manufacture method of hydrid integrated circuit module
State, as follows：
With reference to Fig. 3, it is the operation that substrate 16 is formed on the operation of the sizeable aluminium base of formation in an embodiment.
First, with reference to section Fig. 3 (B) of Fig. 3 (A) and the X-X ' line along Fig. 3 (A), hydrid integrated circuit as needed
The suitable substrate of designed size 16 of module 10, for general hydrid integrated circuit module, the size of substrate 16 can be chosen
64mm × 30mm, thickness is 1.5mm, two sides is carried out with anodised corrosion protection such as and processes.
Here, the direct aluminium to 1m × 1m × 1.5mm that is formed by of sizeable substrate 16 is carried out at gong plate
The mode of reason is formed, and gong knife is used high-speed steel as material, and motor uses 5000 revs/min of rotating speed, gong knife and aluminium plane
At right angles descend knife；Can also be formed by way of punching press.
With reference to Fig. 4 (A), 4 (B), 5 (A) and 5 (B), it is the glass that making predeterminated position in an embodiment offers through hole 22
Fine plate 21 operation in described glass-fiber-plate 21 surface laying circuit-wiring layer 18.
With reference first to profile Fig. 4 (B) of Fig. 4 (A) and the X-X' section of Fig. 4 (A), hydrid integrated circuit as needed
The suitable glass-fiber-plate of module 10 designed size 21, can make in the same size with substrate 16, and that is, 64mm × 30mm is it is also possible to compare base
Plate 16 area is smaller.
Then, in ad-hoc location by modes such as milling cutter, punching presses, form through hole 22, in the present embodiment, define 6
Right angle pylone 22, the size of through hole is 7mm × 5mm, as needed；The through hole 22 of other quantity, size, through hole can also be formed
22 can also make fillet.Here, the thickness of glass-fiber-plate 21 is generally 1mm.
Finally, with reference to profile Fig. 5 (B) of the X-X' section of Fig. 5 (A) and Fig. 5 (A), glue on the surface of institute's glass-fiber-plate 21
Post the Copper Foil as conductive pattern.Then the Copper Foil of this operation manufacture is etched, partly removes Copper Foil, form circuit
Wiring layer 18, and form special circuit-wiring layer 18 as pin pad 18A at least one edge of glass-fiber-plate 16.?
This, Copper Foil typically selects 2 ounces, and the height of the circuit-wiring layer 18 being formed and pin pad 18A is about 0.07mm.
Here, the formation of sizeable glass-fiber-plate 21 can be by directly carrying out to the glass fiber plate of 1m × 1m × 1mm
The modes such as punching are formed, and also can form V groove by the glass fiber plate of first 1m × 1m × 1mm, the mode then sheared is formed.
With reference to Fig. 6, Fig. 7 (A) and 7 (B), it is the making radiator 13 in an embodiment, and arranges power component 19 in institute
State the operation on radiator 13；
Referring to Fig. 6, each radiator 13 is to use Copper base material, by way of punching press or etching, makes as shown in Figure 6
Cuboid. in the present embodiment, the area of radiator 13 is designed to L*W=6mm × 4mm, also dependent on needs, is designed to
The size less than through hole 22, the height H of radiator 13 is designed as 1.1mm, is designed to thicker than glass-fiber-plate 21 also dependent on needs
Degree slightly larger dimensions.In order to improve the wellability of follow-up welding process, silver layer can be formed by the method for chemical plating；According to layers of copper
The situation on surface, can first carry out oil removing, oxide layer, chemistry go out light etc. and process, and are the formation of described radiator before silver-plated
13.
Referring to profile Fig. 7 (B) of Fig. 7 (A) and the X-X' section of Fig. 7 (A), first, radiator 13 is heated, and
Drop in radiator 13 surface by dissolving high temperature solder stick, here, high temperature scolding tin that melt temperature be 310 DEG C about may be selected
Silk.Then, to dissolving and being dispersed in placement power component 19 on the solder stick on radiator 13 surface, flatten, cooling, high temperature scolding tin
After silk solidification, power component 19 is just fixed on described radiator 13 surface.In the present embodiment, the height of the power component 19 of use
Spend for 0.07mm.
Second operation：With reference to Fig. 8 (A) and Fig. 8 (B), it is in an embodiment, makes the work of the independent pin 11 with coating
Sequence.
Each pin 11 is to use Copper base material, by way of punching press or etching, makes the row as shown in Fig. 8 (A)
Pin 11.In the present embodiment, pin 11 is connected by reinforcement by 12 single pin 11 units.As shown in Fig. 8 (B),
Individually pin 11 is 25mm for length L1, and width W1 is 1.5mm, and thickness H1 is the strip of 1mm；Sometimes, for ease of assembling,
Also suppress certain radian in pin 11 wherein one end；
Then nickel dam is formed by the method for chemical plating：By nickel salt and sodium hypophosphite mixed solution, and with the addition of suitable
When chelating agent, form nickel dam on the copper material surface forming given shape, in metallic nickel there is very strong passivation ability, can be fast
Fast-growing becomes one layer of very thin passivating film, can resist the corrosion of air, alkali and some acid.Nickel plating crystallizes superfine little, nickel layer thickness one
As be 0.1 μm；
Then pass through hydrosulphate technique, formed at room temperature shape and nickel dam copper material be immersed in positive stannum from
It is energized in the plating solution of son, form nickeltin layer on nickel dam surface, at 5 μm, the formation of alloy-layer is very big for alloy-layer general control
Improve protectiveness and solderability.
With reference to Fig. 9 (A) and 9 (B), it is in the surface-mounted non-power element 14 of circuit-wiring layer 18 with drawing in an embodiment
The operation of the surface-mounted pin of foot pad 18A 11.
First, by stencil printer, using steel mesh, ad-hoc location to the circuit-wiring layer 18 on glass-fiber-plate 21 and drawing
Foot pad 18A carries out tin cream application；Here, climbing stannum height to improve, the steel mesh of 0.15mm thickness can be used, in order to reduce
State the risk of non-power element 14 displacement, the steel mesh of 0.12mm thickness can be used.
Then, with reference to side view Fig. 9 (A) and top view Fig. 9 (B), non-power element 14 and the installation of pin 11 are carried out, non-
Power component 14 can be directly placed at the ad-hoc location of circuit-wiring layer 18, and pin 11 then one end will be placed in pin pad
On 18A, the other end needs carrier 20 to be fixed, and carrier 20 is made by materials such as compound stones.Then, it is put on carrier 20
Glass-fiber-plate 21 passes through Reflow Soldering, and tin cream solidifies, and non-power element 14 and pin 11 are fixed.Here, can be selected for solution temperature being
280 DEG C of tin cream.
In a preferred embodiment, the manufacture method of hydrid integrated circuit module also includes cleaning the operation of glass-fiber-plate 21.
Glass-fiber-plate 21 is put in cleaning machine and is carried out, will be residual when the scaling powders such as the Colophonium remaining during Reflow Soldering and punching press
The foreign bodies such as the aluminum steel staying clean, according to non-power element 14 circuit-wiring layer 18 arrangement density, cleaning can by spray or
Ultrasonic or both forms of combination are carried out.During cleaning, described pin 11 is clamped by mechanical arm, glass-fiber-plate 21 is placed in rinse bath
In, and it is noted that mechanical arm must not be allowed to touch glass-fiber-plate 21, because glass-fiber-plate 21 enbrittles, if mechanical arm clamping glass-fiber-plate
21, the vibrations producing in cleaning, easily cause glass-fiber-plate 21 and collapse damage.
Reference picture diagrammatic side-view cross-sectional Figure 10 (A) and vertical view cutaway drawing 9 (B), are to smear on described substrate 16 in an embodiment
Insulating barrier 17, and described glass-fiber-plate 21 and described radiator 13 are set on the surface of described insulating barrier 17, make described radiator 13
Pass the operation that described through hole 22 exposes to described glass-fiber-plate 21 surface.
First, form insulating barrier in the most described insulating cement of one layer of dielectric red glue of substrate 16 surface uniform application
17.Then, the glass-fiber-plate 21 cleaning up having assembled non-power element 14 after above-mentioned operation is placed on red
Glue surface, then the radiator 13 having assembled power component 19 is placed on red glue surface by described through hole 22.Here, because
For glass-fiber-plate 21 configuration pin 11, typically can be placed on one can be in the carrier 23 of pin 11 support effect.Finally, will
Carrier 23 is put into baking oven and is added, and makes red adhesive curing.Here, can be selected for the red glue that solidification temperature is 170 DEG C about, the smearing of red glue
Height can be 0.05mm.
After this operation, radiator 13 0.03 ± 0.01mm higher than circuit-wiring layer 18, described power component 19 compares institute
State the high 0.1 ± 0.02mm of circuit-wiring layer 18.
Reference picture diagrammatic side-view cross-sectional Figure 11 (A) and vertical view cutaway drawing 11 (B), are in an embodiment, in described wiring
The operation of metal wire 15 is connected between layer 18, described radiator 13, described power component 19 and described non-power element 14.
According to through-current capability needs, the aluminum steel selecting suitable diameter as bonding line (metal wire 15), for for signal
The integrated circuit controlling is it is also contemplated that be used gold thread as bonding line.In the present embodiment, all select aluminum steel.In general,
To the aluminum steel using 350 μm～400 μm with the bonding of power component 19, the bonding with non-power element 14 is used 38 μm～
200 μm of aluminum steel, uses 350 μm～400 μm of aluminum steel to the bonding with radiator 13.
Because radiator 13 and power component 19 are very little with the difference in height of circuit-wiring layer 18, can compared with N in (formula 1)
To ignore, the distance between radiator 13 and power component 19 and circuit-wiring layer 18 is determined by N, i.e. 3mm (millimeter).Because nation's line
Difference in height is little, and nation's linear distance is short, just can complete the work of this operation using general domestic aluminum steel nation line machine.
Reference section Figure 12, in a preferred embodiment, the manufacture method of hydrid integrated circuit module also includes will be described
The operation of all surface sealing in addition to the surface relative with being coated with described insulating barrier in substrate.
Oxygen-free environment toasts to substrate 16, baking time no less than 2 hours, baking temperature and selection 125
℃.The substrate 16 having configured pin 11 is transported to model 44 and 45.By making specific part and the fixing device 46 of pin 11
Contact, carries out the positioning of substrate 16.During matched moulds, it is being formed at placement substrate 16, Ran Houyou in the die cavity within model 44 and 45
Cast gate 53 injects sealing resin.The method being sealed using moulding using the transmission mould of thermosetting resin or can use thermohardening
The injection mould molding of resin.And, the gas of the corresponding sealing resin mold cavity from cast gate 53 injection passes through air vent 54 row
It is put into outside.
Here, the back side of substrate 16 is close on lower mould 45, but still has described sealing resin on a small quantity and enter into substrate 16
The back side and lower mould 45 between.Therefore, after demoulding, need to carry out laser-induced thermal etching or grinding, substrate 16 back side will be remained in
A small amount of sealing resin remove, so that the back side of substrate 16 is exposed from sealing resin, and the back side of substrate 16 sealed with outer portion
Resin seal.
In a preferred embodiment, the manufacture method of hydrid integrated circuit module also includes carrying out pin 11 Trim Molding simultaneously
Carry out the operation of functions of modules test, above-mentioned hydrid integrated circuit module 10 is through being completed as product by this operation.
Transmitting mould mold assembly step in front operation makes the other parts in addition to pin 11 all sealed by resin.This operation root
Need according to the length using and shape, the part cut-out of external pin 11 also can be bent into definite shape, after being easy to sometimes
Continuous assembling.Then hydrid integrated circuit module 10 is put in test equipment, carry out the electric parameters testing of routine, generally comprise absolutely
The test events such as edge is pressure, quiescent dissipation, delay time, test passes person is finished product.
Using above-mentioned operation, complete the SPM 10 shown in Fig. 2.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (14)
1. a kind of hydrid integrated circuit module is it is characterised in that include：
Wherein one surface is coated with the substrate of insulating barrier；
In the glass-fiber-plate of the surface setting of described insulating barrier, wherein, this glass-fiber-plate offers through hole in predeterminated position；
Surface location in the relatively described through hole of described insulating barrier is provided with and passes this through hole and expose to described glass plate surface
Radiator；
The circuit-wiring layer being formed in described glass plate surface；
The power component being disposed on described radiator and the non-power element being disposed in described circuit-wiring layer relevant position；
For connecting the metal wire of described circuit-wiring layer, described radiator, described power component and described non-power element.
2. hydrid integrated circuit module as claimed in claim 1 is it is characterised in that also include pin, described circuit-wiring layer
Including near described substrate marginal surface pin pad, described pin be connected with described pin pad and from described substrate to
Outer extension.
3. hydrid integrated circuit module as claimed in claim 1 or 2 is it is characterised in that also include sealant, described sealant
It is coated on all surface being coated with described substrate beyond the relative surface region of described insulating barrier.
4. hydrid integrated circuit module as claimed in claim 1 or 2 is it is characterised in that described power component is IGBT pipe, height
Pressure MOSFET pipe or high pressure FRD pipe.
5. hydrid integrated circuit module as claimed in claim 1 or 2 is it is characterised in that described radiator is provided with described work(
The surface of rate element is 0.03 ± 0.01mm, described power component and institute with the vertical drop on the surface of described circuit-wiring layer
The vertical drop stating the relative surface of radiator with the surface of circuit-wiring layer is 0.1 ± 0.02mm.
6. hydrid integrated circuit module as claimed in claim 1 or 2 is it is characterised in that described circuit-wiring layer is dissipated with described
Between hot device and described power component, the diameter span of the metal wire of connection is：350 μm～400 μm；Described circuit-wiring layer
The diameter span of the described metal wire being connected with described non-power interelement is：38 μm～200 μm.
7. a kind of manufacture method of hydrid integrated circuit module is it is characterised in that include：
Make the glass-fiber-plate that substrate, radiator and predeterminated position offer through hole, and cover in wherein one surface of described substrate
The operation of insulating barrier；
Described glass-fiber-plate and radiator are set on the surface of described insulating barrier, make described radiator pass described through hole and expose to institute
State the operation of glass plate surface；
Lay the operation of circuit-wiring layer in described glass plate surface；
Arrange the power component and non-power element operation with described circuit-wiring layer relevant position on described radiator respectively；
Connect the work of metal wire in described circuit-wiring layer, described radiator, described power component and described non-power interelement
Sequence.
8. the manufacture method of hydrid integrated circuit module as claimed in claim 7 is it is characterised in that described circuit-wiring layer bag
Include the pin pad of the marginal surface near described substrate, lay the operation of circuit-wiring layer in be set forth in described glass plate surface
Also include afterwards：Setting pin, the operation described pin being connected with described pin pad and stretching out from described substrate.
9. the manufacture method of hydrid integrated circuit module as claimed in claim 7 or 8 is it is characterised in that described in circuit
Also include after wiring layer, the operation of described radiator, described power component and described non-power interelement connection metal wire：Will
It is coated with the operation of all surface sealing beyond the relative surface region of described insulating barrier in described substrate.
10. hydrid integrated circuit module as claimed in claim 7 or 8 manufacture method it is characterised in that described configuration non-
Power component also includes after the operation of described circuit-wiring layer relevant position：Clean the operation of described glass-fiber-plate.
A kind of 11. manufacture methods of hydrid integrated circuit module are it is characterised in that include：
Make the operation of substrate；
Make the glass-fiber-plate that predeterminated position offers through hole, and lay the operation of circuit-wiring layer in described glass plate surface；
Make radiator, and arrange operation on described radiator for the power component；
Configuration non-power element is in the operation of described circuit-wiring layer relevant position；
Smear insulating barrier on the substrate, and described glass-fiber-plate and described radiator are set on the surface of described insulating barrier, make
Described radiator passes the operation that described through hole exposes to described glass plate surface；
Connect the work of metal wire in described circuit-wiring layer, described radiator, described power component and described non-power interelement
Sequence.
The manufacture method of 12. hydrid integrated circuit modules as claimed in claim 11 is it is characterised in that described circuit-wiring layer
Including the pin pad of the marginal surface near described substrate, lay the work of circuit-wiring layer in be set forth in described glass plate surface
Also include after sequence：Setting pin, the operation described pin being connected with described pin pad and stretching out from described substrate.
The manufacture method of the 13. hydrid integrated circuit modules as described in claim 11 or 12 is it is characterised in that described in electricity
Also include after road wiring layer, the operation of described radiator, described power component and described non-power interelement connection metal wire：
Operation by all surface sealing in addition to the surface relative with being coated with described insulating barrier in described substrate.
The manufacture method of the 14. hydrid integrated circuit modules as described in claim 11 or 12 is it is characterised in that in described configuration
Non-power element also includes after the operation of described circuit-wiring layer relevant position：Clean the operation of described glass-fiber-plate.
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| CN104795378B (en) * | 2015-03-23 | 2018-05-08 | 广东美的制冷设备有限公司 | Intelligent power module and its manufacture method |
| CN104766842B (en) * | 2015-03-23 | 2017-09-08 | 广东美的制冷设备有限公司 | SPM and its manufacture method |
| JP6500162B2 (en) * | 2015-03-23 | 2019-04-10 | 広東美的制冷設備有限公司Ｇｄ Ｍｉｄｅａ Ａｉｒ−Ｃｏｎｄｉｔｉｏｎｉｎｇ Ｅｑｕｉｐｍｅｎｔ Ｃｏ．，Ｌｔｄ． | Intelligent power module and manufacturing method thereof |
| CN104795374B (en) * | 2015-03-23 | 2017-10-13 | 广东美的制冷设备有限公司 | SPM and its manufacture method |
| CN104835794B (en) * | 2015-03-23 | 2018-02-02 | 广东美的制冷设备有限公司 | SPM and its manufacture method |
| CN104779174B (en) * | 2015-03-23 | 2018-05-01 | 广东美的制冷设备有限公司 | The production method of power module |
| CN104767396B (en) * | 2015-03-23 | 2017-11-14 | 广东美的制冷设备有限公司 | SPM and its manufacture method |
| CN104752373B (en) * | 2015-03-23 | 2018-10-23 | 广东美的制冷设备有限公司 | intelligent power module and its manufacturing method |
| EP3442019A4 (en) * | 2016-04-06 | 2019-12-04 | Shindengen Electric Manufacturing Co., Ltd. | Power module |
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| CN1971923A (en) * | 2005-11-24 | 2007-05-30 | 矽格股份有限公司 | Encapsulation structure of optical sensing element |
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