TW201019500A - A ceramic packaging substrate for the high power LED - Google Patents

A ceramic packaging substrate for the high power LED Download PDF

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TW201019500A
TW201019500A TW97143496A TW97143496A TW201019500A TW 201019500 A TW201019500 A TW 201019500A TW 97143496 A TW97143496 A TW 97143496A TW 97143496 A TW97143496 A TW 97143496A TW 201019500 A TW201019500 A TW 201019500A
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Taiwan
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ceramic layer
ceramic
layer
heat
package base
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TW97143496A
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Chinese (zh)
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TWI409974B (en
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can-sheng Xie
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Chaozhou Sanhuan Group Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Abstract

A ceramic packaging substrate, especially a ceramic packaging substrate for the SMD high-power LED, has upper and lower ceramic layers made of ceramic materials, and the upper ceramic layer offers a reflecting cup. The upper ceramic layer is set with an optical lens mounting area for mounting an optical lens and a secondary optical module mounting area for mounting a secondary optical module. The upper surface of the lower ceramic layer is fixed with a wire-bonding area for setting the chip and a bottom pad. The substrate is punched to form conductive holes. The ceramic layers are made of the same or different ceramic materials and connected by sintering an inorganic medium.

Description

201019500 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種陶瓷封裝基座，特別是指一種表 面黏著（SMD)高功率發光二極體（LED)陶瓷封裝基座。 【先前技術】 LED作為一種新型光源，由於具有節能、環保、壽命 長、啟動速度快、能控制發光光譜和禁止帶幅的大小使彩 度更高等傳統光源無可比擬的優勢而得到了空前發展。伴 隨著LED電流強度和發光量的增加，LED晶片的發熱量也 隨之上升，對於高功率LED，輸入能源的8〇%都以熱的形 態消耗掉。如果這些熱量不能及時排出外界，造成晶片的 溫升效應，LED的壽命和出光率都會大打折扣；傳統使用 的環氧樹脂封裝基座的熱傳導率僅為〇 47w/mK，已經遠遠 不能滿足高功率的LED的散熱要求。近年逐步被較高導熱 率的鋁金屬基板替代，鋁基板受絕緣有機材料的影響，熱 傳導率為1〜2.2W/mK，能夠滿足部分較高功率[ED的封裝 要求，但鋁基板的熱膨脹係數與LED晶片差異很大，當溫 度變化很大或封裝作業不當時極易產生熱歪斜，引發晶片 瑕疫及發光效率降低。由於LED亮度隨驅動電流的增大而 增大’對更高亮度的LED ’鋁基板已經無法滿足其散熱要 求’陶瓷封裝基座因具有熱導率高、熱膨脹係數與高亮度 LED晶體匹配、電絕緣強度高、可設計反射杯及導熱柱等 可以有效的解決這些問題而成為高功率LED的理想散熱基 座材料。 201019500201019500 IX. Description of the Invention: [Technical Field] The present invention relates to a ceramic package pedestal, and more particularly to a surface mount (SMD) high power light emitting diode (LED) ceramic package pedestal. [Prior Art] As a new type of light source, LED has achieved unprecedented development due to its energy saving, environmental protection, long life, fast start-up speed, ability to control the luminescence spectrum, and the prohibition of the size of the band, which makes the chroma light more unparalleled. . Along with the increase in LED current intensity and illuminance, the heat generated by the LED chip also increases. For high-power LEDs, 8〇% of the input energy is consumed in a hot state. If the heat cannot be discharged to the outside world in time, causing the temperature rise effect of the wafer, the life and light output rate of the LED will be greatly reduced; the thermal conductivity of the conventional epoxy resin packaged base is only w47w/mK, which is far from being high. The heat dissipation requirements of the power LED. In recent years, it has been gradually replaced by a high thermal conductivity aluminum metal substrate. The aluminum substrate is affected by the insulating organic material, and the thermal conductivity is 1 to 2.2 W/mK, which can meet some of the higher power [ED packaging requirements, but the thermal expansion coefficient of the aluminum substrate. It is very different from LED chips. When the temperature changes greatly or the package operation is not proper, it will easily cause thermal skew, which will cause the plague and luminous efficiency of the wafer to decrease. Since the brightness of the LED increases with the increase of the drive current, 'the LED with higher brightness' can't meet the heat dissipation requirement'. The ceramic package base has high thermal conductivity, thermal expansion coefficient and high brightness LED crystal matching, and electricity. The high insulation strength, the design of the reflector cup and the heat-conducting column can effectively solve these problems and become the ideal heat-dissipating base material for high-power LEDs. 201019500

目前高功率LED的陶竟封裝基座主要是由兩層不同材 料構成（上層為金屬材料，如銘合金，下層為氧化紐基材 的覆銅板）。由於覆銅板成本高昂，並且由於沒有導熱柱的 設計而導致熱傳導率受氧化銘所限，只有約18〜2G HAt present, the high-power LED ceramic package base is mainly composed of two layers of different materials (the upper layer is a metal material, such as the alloy, and the lower layer is a copper-clad laminate with a oxidized base material). Due to the high cost of the copper clad laminate and the lack of thermal conductivity, the thermal conductivity is limited by oxidation, only about 18~2G H

而且上下層的組合為_合_結，其氣純不佳而導致 耐環境性不好，同時膠合劑形成的固化層會阻礙上下基座 間熱傳導。現有技術的產品結構如圖1和圖2所示，上層 為銘合金環，下層為氧化ls基材的覆銅板，上層提供反射 杯下層安裝晶片，並實現與底層電極電導通。其中貼片 G 1用於安裝晶片；打線區2通過焊接導線連接晶片的電 極；底部焊盤3通過基座金屬化佈線，實現與晶片兩個電 極的連接；電導通& 4連接上下兩層金屬化佈線，實現上 下電導通；反射杯5起到聚光及反射增加亮度的作用；用 =辅助散熱作料散熱焊盤6,安裝光學透鏡㈣光學透鏡 女裝區7’用於絲二次光學元件的二次光學元件安裝區8 上述結構的缺點及導致原因包括：1)、環氧樹脂封裝 座及紹基板熱導率低，且_脹係數與高功率led晶片 =目差太大’導致發光效率和壽命大打折扣無法達到高功 率、長壽=的技術要求。2)、現有的料封裝基座主要的 、點是.第一，兩層採用兩種熱膨脹係數相差大的材 '且兩層的結合是用谬合劑黏合，黏合強度在受熱環境 下極：減弱，導致結合強度及氣密性差，甚至會產生、上下 兩層分離’不能滿足潮濕環境的使用。且黏合形成的固化 201019500 層’易阻礙著上下基座間的熱傳導；第二，底層陶瓷材料 無導熱柱設計，熱導率受限於陶瓷材料的性能，因此大大 削弱了封裝基座的整體散熱性能，並且影響高功率led的 壽命及發光效率。 基於現有陶瓷封裝基座的不足之處，本發明人設計了“ 一種高功率LED陶瓷封裝基座，’。 【發明内容】Moreover, the combination of the upper and lower layers is a _ _ knot, which is poor in gas purity and causes poor environmental resistance, and the solidified layer formed by the adhesive hinders heat conduction between the upper and lower pedestals. The structure of the prior art product is shown in Fig. 1 and Fig. 2. The upper layer is an alloy ring, the lower layer is a copper clad plate for oxidizing the ls substrate, and the upper layer is provided with a reflective cup lower layer mounting wafer, and electrical conduction with the bottom electrode is realized. The patch G 1 is used for mounting the wafer; the wire bonding zone 2 is connected to the electrode of the wafer through the soldering wire; the bottom pad 3 is connected to the two electrodes of the wafer through the metallization wiring of the base; the electrical conduction & Metalized wiring to achieve upper and lower electrical conduction; reflective cup 5 to condense and reflect to increase brightness; use = auxiliary heat dissipation material to heat the pad 6, install optical lens (4) optical lens women's area 7' for silk secondary optics The secondary optical component mounting area of the component 8 has the following disadvantages and causes: 1), the epoxy resin package and the substrate have low thermal conductivity, and the _ expansion coefficient and the high power LED chip = too large a difference The luminous efficiency and life expectancy are greatly reduced, and the technical requirements of high power and longevity = cannot be achieved. 2) The main material package base is the main point. First, the two layers use two materials with large difference in thermal expansion coefficient' and the two layers are bonded with a chelating agent. The bonding strength is in the heat environment: weakening , resulting in poor bonding strength and air tightness, and even produced, the separation of the upper and lower layers 'can not meet the use of humid environment. And the cured layer formed by the adhesion of 201019500 layer 'is easy to block the heat conduction between the upper and lower pedestals; secondly, the bottom layer ceramic material has no heat-conducting column design, and the thermal conductivity is limited by the performance of the ceramic material, thus greatly reducing the overall heat dissipation performance of the package base. And affect the life and luminous efficiency of high power LED. Based on the deficiencies of the existing ceramic package pedestal, the inventors have designed "a high power LED ceramic package pedestal,".

本發明針對上述現有技術的不足所要解決的技術問題 是：提供一種提高SMD高功率LED封裝基座散熱性能和增 強LED產品耐高低溫度衝擊性能，並且提高產品可靠性及 穩定性的高功率LED陶瓷封裝基座。 本發明解決其技術問題所採用的技術方案是： 種同功率LED陶瓷封裝基座，該基座由上陶瓷層和 下陶瓷層構成，上陶瓷層提供反射杯，在上陶瓷層還設有 用於安裝光學透鏡的光學透鏡安裝區和用於安裝二次光學 7C件的二次光學元件安裝區，下陶瓷層用於安裝晶片並實 現與底層電極電導通m層上側設有用於安裝晶片的 貼片區和通過焊接導線連接晶片電極的打㈣，下陶究層 下側設有通過基座金屬化佈線實現與W兩個電極連接的 底部焊盤，基座還設有用於連接上下兩層金屬化佈線以實 現上下電導通的電導通孔，該電導通孔可設在基座的内部 或邊緣；上陶变層中的反射杯起到聚光及反射增加亮度的 用所述的上陶竟層和下陶竞層均由氧化铭陶究材料或 氮化紹陶㈣料製成，或者，上陶兗層由LTCC材料製成和 201019500 下陶瓷層由氧化鋁陶瓷材料或氮化鋁陶瓷材料製成。上、 3:陶莞層通過無機熔封介質材料燒結的方式連接，用於 提门封裝基座整體機械強度及散熱性能，高溫氧化銘和氮 化銘陶究材料的熱導率分別為i8〜2〇w/mK和 W/mK。 所述的反射杯由氧化铭材料製成，在反射杯的反射面 上電鍵或真空賤射金屬層，可以提高反射杯的反射率。 所述的反射杯用低溫共燒陶竟（L〇w_temperature cofired ceramics ’簡稱LTCC)材料製成因為ltcc材料 本身具有良好的反光性’所以不需要像氧化鋁或氮化鋁材 料反射杯的反射面再電鍍或真空濺射金屬層。 所述的下陶究層可以設有相連的高導熱柱和散熱焊盤 ’高導熱柱設於下㈣層㈣，高導熱柱的上侧與貼片區 相連接’貼片區還設有用銀（Ag)、鎢（w)、箱（m。）或 銅（Cu)等间導熱材料填充的高導熱柱，高導熱柱用於將 晶片產生的歸快速導出，散熱焊難於下料層的下側 ，用於將高導熱柱導出的熱散逸出來，高導熱柱的下側與 散熱焊盤相連接，散熱焊盤能夠輔助散熱。 所述的同導熱柱由銀、鎢、錮或銅金屬填充而成，用 於增強陶瓷基座縱向的傳熱效果。 下陶兗層材料為氧化銘（Al2〇3) „或者氮化紹（ A1N)陶£提供支#晶#並佈線實現與底層電極電導通及 散熱用，上陶瓷層為相同或不同的陶瓷材料，提供反射杯 及光學透鏡安裝位置；上陶竟層和下陶竞層的結合通過無 201019500 機熔封介質材料燒結，再經電鍍製成全陶瓷的基座。 底 而 單顆陶竞封裝基座產品可以安裳單晶片或多晶片， 層内部佈線®形及設計層數可根據安裝晶片數量及種類 相應變化。也可多顆陶㈣裝基座形成封裳聯片。 本發明基座的具體製法流程如下： 下陶莞層材料為氧化銘（Al2〇3)陶竞或者氮化链 A1N)陶究，上陶究層為相同或不同的陶綺料，％ Mo或Cu為金屬化材料。The technical problem to be solved by the present invention against the above-mentioned prior art is to provide a high-power LED ceramic which improves the heat dissipation performance of the SMD high-power LED package base and enhances the high and low temperature impact resistance of the LED product, and improves the reliability and stability of the product. Package base. The technical solution adopted by the present invention to solve the technical problem is: a same power LED ceramic package base, the base is composed of an upper ceramic layer and a lower ceramic layer, the upper ceramic layer provides a reflective cup, and the upper ceramic layer is further provided for the upper ceramic layer An optical lens mounting region for mounting an optical lens and a secondary optical component mounting region for mounting a secondary optical 7C member, the lower ceramic layer for mounting the wafer and electrically conducting with the underlying electrode, and a chip for mounting the wafer on the upper side of the m layer a region and a wafer electrode connected by a soldering wire (four), and a lower surface of the lower ceramic layer is provided with a bottom pad connected to the two electrodes through the metallization wiring of the base, and the base is further provided for connecting the upper and lower layers of metallization Wiring to realize electrical conduction through-holes, the conductive vias may be disposed inside or at the edge of the susceptor; the reflective cups in the upper ceramic layer serve to condense and reflect to increase the brightness of the upper ceramic layer Both the lower pottery layer and the lower pottery layer are made of oxidized ceramic materials or nitrided ceramics (four), or the upper ceramic layer is made of LTCC material and the ceramic layer of 201019500 is made of alumina ceramic material or aluminum nitride ceramic material. production. Shang, 3: The pottery layer is connected by the sintering method of inorganic sealing medium material, which is used for the overall mechanical strength and heat dissipation performance of the door package base. The thermal conductivity of the high temperature oxidation and nitrite ceramic materials are respectively i8~ 2〇w/mK and W/mK. The reflector cup is made of an oxidized material, and the surface of the reflector cup is electrically or vacuum-sprayed to improve the reflectivity of the reflector cup. The reflector cup is made of L〇w_temperature cofired ceramics (LTCC) material because the ltcc material itself has good light reflectivity, so there is no need for a reflective surface of a reflective cup like alumina or aluminum nitride. The metal layer is re-plated or vacuum sputtered. The lower ceramic layer may be provided with a connected high thermal conductivity column and a heat dissipation pad. The high thermal conductivity column is disposed on the lower (four) layer (four), and the upper side of the high thermal conductivity column is connected with the patch area. The patch area is also provided with silver. High thermal conductivity column filled with thermal conductive material (Ag), tungsten (w), box (m.) or copper (Cu). The high thermal conductivity column is used to quickly export the wafer. The heat dissipation is difficult to be performed under the lower layer. The side is used to dissipate heat from the high thermal conductivity column, and the lower side of the high thermal conductivity column is connected to the thermal pad, and the thermal pad can assist heat dissipation. The same heat conducting column is filled with silver, tungsten, tantalum or copper metal for enhancing the longitudinal heat transfer effect of the ceramic base. The lower pottery layer material is oxidized (Al2〇3) „ or nitrided (A1N) pottery provided with #晶晶# and wiring to achieve electrical conduction and heat dissipation with the bottom electrode, the upper ceramic layer is the same or different ceramic material Providing a reflective cup and an optical lens mounting position; the combination of the upper pottery layer and the lower pottery layer is sintered by a non-201019500 machine sealing medium material, and then electroplated to form a full ceramic base. The bottom and the single pottery encapsulation base The product can be single-chip or multi-wafer, and the internal wiring pattern and design layer can be changed according to the number and type of mounting wafers. It is also possible to form a plurality of ceramic (four) pedestals to form a splicing piece. The specific process is as follows: The material of the lower pottery layer is Oxidant (Al2〇3) Tao Jing or nitriding chain A1N). The upper pottery layer is the same or different pottery materials, and the % Mo or Cu is metallized material. .

1、下陶瓷層用W、Mo金屬化材料時： 1 )下陶瓷層.原材料分散—成型〜切片〜沖孔 ’灌封（印孔）—平面印刷—疊層/加壓—壓槽—排膠 /燒結。 2)上陶瓷與下陶瓷材料相同，為氧化鋁（八丨2〇3 )陶瓷 或者氮化鋁（A1N)陶瓷時：1. When the lower ceramic layer is made of W or Mo metallization material: 1) lower ceramic layer. Raw material dispersion-forming~ slicing~punching' potting (printing hole)-planar printing-lamination/pressurization-pressing groove-row Glue / sintered. 2) When the upper ceramic is the same as the lower ceramic material, when it is alumina (barium 2〇3) ceramic or aluminum nitride (A1N) ceramic:

上陶瓷層：原材料分散—成型—排膠/燒結_電鍍 或真空濺射金屬層， X 上陶瓷與下陶瓷材料不相同，上陶瓷層為LTCC材料， 陶瓷層為氧化鋁（八丨2〇3 )陶瓷或者氮化鋁（AiN )陶瓷 時： 上陶瓷層：原材料分散—成型—排膠/燒結。 3)下陶瓷層和上陶瓷層完成後再對位〜定位燒結結合 電錢錦和銀。 2、下陶瓷層用Ag、cu金屬化材料時： )下陶究層.原材料分散_>成型―切片—_沖別 201019500 —疊層/加壓—壓槽—排膠/燒結—灌封（印孔）—平面印刷 —燒結。 2)上陶瓷與下陶瓷材料相同，為氧化鋁（八丨2〇3)陶瓷 或者氮化紹（A1N)陶竟時： 上陶瓷層：原材料分散—成型〜排膠/燒結—電鍍/ 真空濺射金屬層。 上陶竟與下陶竟材料不相同，上陶£層為LTCC材料， 下陶兗層為氧化銘（Al2〇3)陶究或者氮化銘（ain) Φ 時： 原材料分散—成型―排膠/燒結 3)下陶莞層和上陶-亮層完成後再對位—定位燒結結合 —電鍍鎳和銀。 ❹ 本發明-種高功率LED料封録座时益效果是： 提高了 SMD高功率LED封裝基座散熱性能改善因溫升導 致LED晶片光衰大及壽命下降的問題；增強咖產品耐高 低溫度衝擊性能’提高產品的可靠性、穩定性；降低生產 成本。與現有技術相比，本發明具備有以下幾個特點： ⑴散熱性好。本發明LED陶瓷封裝基座的上陶瓷層 基材為Al2〇3或者A1N冑究或者為ltcc材料，盆敎導率高 =基座W區可設有用Ag、W、M。或&等金屬填充的 尚導熱柱辅助散熱，增絲座縱向及橫向傳熱效果，很好 的解決了基座散熱的關鍵問題。 (2)機械性能強。上陶究層和下陶竞層採用的都是陶 £材料燒結合成’其黏接性得到極大提高，具有較高的機 1 S1 10 201019500 適用於終端成 械強度，適用於下道卫序生產安裝的製作 品應用的各種機械強度的需要。 ⑴陶竞基座與晶片的熱膨脹係數相匹 用中，熱膨脹係數相匹配更能保證產品耐高低衛 性能，大大提高LED產品的可靠性、穩定性。又 ⑷财環境變化性能優越，下㈣層和 陶瓷的材料，上下陶瓷層結合免層都疋 用無機熔封介質材料燒結 ❹Upper ceramic layer: raw material dispersion-forming-discharging/sintering_electroplating or vacuum sputtering metal layer, X upper ceramic is different from lower ceramic material, upper ceramic layer is LTCC material, ceramic layer is alumina (eight 丨2〇3 Ceramic or aluminum nitride (AiN) ceramics: Upper ceramic layer: raw material dispersion - forming - debinding / sintering. 3) After the lower ceramic layer and the upper ceramic layer are completed, the alignment and positioning sintering are combined with electric money and silver. 2, when the lower ceramic layer is made of Ag, cu metallized material:) Lower ceramic layer. Raw material dispersion _> Molding-Slice-_Chongdong 201019500 - Lamination/pressurization-pressing-discharging/sintering-potting (Pin hole) - flat printing - sintering. 2) The upper ceramic is the same as the lower ceramic material, which is alumina (Bagua 2〇3) ceramic or nitrided (A1N) ceramic: When the ceramic layer: raw material dispersion - molding ~ debinding / sintering - plating / vacuum splashing Shoot the metal layer. Shangtao is not the same as Xia Tao's material. The upper pottery layer is LTCC material, and the lower pottery layer is oxidized (Al2〇3) ceramic or nitrite (ain) Φ: raw material dispersion-forming-discharging /Sintering 3) The lower pottery layer and the upper pottery-bright layer are completed and then aligned - positioned and sintered combined - electroplated nickel and silver. ❹ The invention has the advantages of improving the heat dissipation performance of the SMD high-power LED package base due to the temperature rise, and the problem of the light decay and the life of the LED chip is increased; Impact performance 'improves product reliability and stability; reduces production costs. Compared with the prior art, the invention has the following characteristics: (1) good heat dissipation. The upper ceramic layer substrate of the LED ceramic package base of the present invention is Al2〇3 or A1N or ltcc material, and the basin conductivity is high = the base W region can be provided with Ag, W, M. Or the metal-filled heat-conducting column to assist heat dissipation, the longitudinal and lateral heat transfer effect of the wire-increasing seat, which solves the key problem of the base heat dissipation. (2) Strong mechanical properties. The upper pottery layer and the lower pottery layer are all made of ceramic material. The adhesiveness is greatly improved, and the machine has a high machine. S1 10 201019500 is suitable for the terminal mechanical strength and is suitable for the production of the next line. The installation of the works requires the application of various mechanical strengths. (1) In comparison with the thermal expansion coefficient of the wafer and the wafer, the thermal expansion coefficient is matched to ensure the high and low performance of the product, and the reliability and stability of the LED product are greatly improved. (4) The financial environment has superior performance, and the lower (four) layer and ceramic materials, the upper and lower ceramic layers combined with the free layer are sintered with inorganic sealing medium.

的連接工藝’使得上下兩陶瓷層材料熱膨脹係數一致，當 溫度變大時’不會出現漏氣現象，氣密性得以保證，保護 了晶片及其封裝材料，從而提高了咖產品的 【實施方式】 參照圖3至圖1〇,本發明是這樣實施的： 在圖3和圖4中，一種高功率咖陶竟封裝基座由上 陶竞層ίο和下料層u構成，上㈣層1G設有反射杯5 、光學透鏡安裝區7和二次光學元件安裝區8，下陶竞層^ 用於安裝晶片並實現與底層電極電導通，下陶究層^上側 认有用於安裝晶片的貼片區丨和通過焊接導線連接晶片電 極的打線區2’下料層η下侧設㈣過基座金屬化佈線 實現與晶片兩個電極連接的底部焊盤3，基座還設有用於連 接上下兩層金屬化佈線以實現上下電導通的電導通孔4,該 電導通孔4可設在基座的内部或邊緣。上陶瓷層1〇中的反 射杯5起到聚光及反射增加亮度的作用，下陶瓷層u和上 陶瓷層10可以由相同的氧化鋁或氮化鋁陶瓷材料製成；也 可由不相同的陶瓷材料製成，下陶瓷们i自氧化鋁或氮化 m 11 201019500 鋁陶瓷材料製成’上陶瓷層10 * LTCC材料製成。上陶瓷 層10和下陶瓷層11通過無機介質12燒結的方式連接，用 於知^咼封裝基座整體機械強度及散熱性能在本實施例中 ，無機介質12為無機熔封介質材料，高溫氧化鋁和氮化鋁 陶瓷材料的熱導率分別為18〜2〇w/mK和17〇〜23〇w/mK。 下陶瓷層11設有相連的高導熱柱9和散熱焊盤6，高 導熱柱9設於下陶瓷層u内部，高導熱柱9的上側與貼片 區相連接，高導熱柱9用於將晶片產生的熱導出，散熱焊 盤6設於下陶瓷層n的下側，用於將高導熱柱9導出的熱 散逸出來，高導熱柱9的下側與散熱焊盤6相連接。 在圖5和圖6的實施例二中，其和實施例一設置用於 女裝晶片的貼片區1數量一樣，均為一個。在圖7和圖§ 的實施例三以及圖9和圖1 〇的實施例四中，設置有三個用 於安裝晶片的貼片區1。其也可以根據不同的需要設置不同 數量的貼片區1。 在本實施例中’高導熱柱9由銀金屬製成，熱導率約 為430 W/mK ’另外高導熱柱9也可以由銀、鎢、鉬或銅等 金屬填充而成’用於增強陶瓷封裝基座縱向的傳熱效果。 以上所述，僅是本發明一種高功率LED陶瓷封裝基座 的較佳實施例而已，並非對本發明的技術範圍作任何限制 ’凡是依據本發明的技術實質對上面實施例所作的任何細 微修改、等同變化與修飾，均仍屬於本發明技術内容的範 圍内。 【圖式簡單說明】 12 i S1 201019500 圖1是現有陶瓷LED封裝基座的整體結構側視圖； 圖2是現有陶瓷LED封裝基座的整體結構俯視圖； 圖3是本發明實施例一的整體結構側視圖； 圖4是本發明實施例一的整體結構俯視圖； 圖5是本發明實施例二的整體結構側視圖； 圖6是本發明實施例二的整體結構俯視圖； 圖7是本發明實施例三的整體結構側視圖； 圖8是本發明實施例三的整體結構俯視圖； 參 圖9是本發明實施例四的整體結構側視圖；及 圖10是本發明實施例四的整體結構俯視圖。 13 201019500 【主要元件符號說明】 1 ..........貼片區 2 ..........打線區 3 ..........底部焊盤 4 ..........電導通孔 5 ..........反射杯 6 ..........散熱焊盤 7 ..........光學透鏡安裝區 8 ..........二次光學元件安 裝區 9 ..........(¾導熱柱 10 .........上陶瓷層 11 .........下陶瓷層 12 .........無機介質 參The connection process makes the thermal expansion coefficients of the upper and lower ceramic layers uniform, and when there is a large temperature, there is no gas leakage, the airtightness is ensured, and the wafer and its packaging materials are protected, thereby improving the implementation of the coffee product. Referring to FIG. 3 to FIG. 1 , the present invention is implemented as follows: In FIG. 3 and FIG. 4 , a high-power coffee pot package base is composed of an upper pottery layer ίο and a lower layer u, and the upper (four) layer 1G. The reflector cup 5, the optical lens mounting area 7 and the secondary optical component mounting area 8 are provided, and the lower pottery layer is used for mounting the wafer and electrically conducting with the bottom electrode, and the upper layer of the ceramic layer is provided with a sticker for mounting the wafer. The pad and the wire bonding area 2' of the wafer electrode connected by the soldering wire are provided on the lower side of the lower layer η. (4) The pedestal metallization wiring is used to realize the bottom pad 3 connected to the two electrodes of the wafer, and the pedestal is further provided for connecting the upper and lower sides. The two layers of metallized wiring are used to realize electrical conduction through holes 4 that are electrically connected to the upper and lower sides, and the electrically conductive through holes 4 may be provided inside or at the edge of the base. The reflective cup 5 in the upper ceramic layer 1 is used for collecting and reflecting to increase the brightness. The lower ceramic layer u and the upper ceramic layer 10 may be made of the same alumina or aluminum nitride ceramic material; or may be different. Made of ceramic material, the lower ceramics are made of alumina or nitrided m 11 201019500 aluminum ceramic material made of 'on-ceramic layer 10 * LTCC material. The upper ceramic layer 10 and the lower ceramic layer 11 are connected by sintering of the inorganic medium 12 for understanding the overall mechanical strength and heat dissipation performance of the package base. In the present embodiment, the inorganic medium 12 is an inorganic sealing medium material, and is oxidized at a high temperature. The thermal conductivity of the aluminum and aluminum nitride ceramic materials is 18 to 2 〇 w/mK and 17 〇 to 23 〇 w/mK, respectively. The lower ceramic layer 11 is provided with a connected high-heat-conducting column 9 and a heat-dissipating pad 6, and the high-heat-conducting column 9 is disposed inside the lower ceramic layer u. The upper side of the high-heat-conducting column 9 is connected to the patch area, and the high-heat-conducting column 9 is used for The heat generated by the wafer is led out, and the heat dissipation pad 6 is disposed on the lower side of the lower ceramic layer n for dissipating heat derived from the high heat conduction column 9, and the lower side of the high heat conduction column 9 is connected to the heat dissipation pad 6. In the second embodiment of Figs. 5 and 6, it is the same as the number of the patch areas 1 provided for the women's wafer in the first embodiment. In the third embodiment of Figs. 7 and § and the fourth embodiment of Figs. 9 and 1 , three patch regions 1 for mounting wafers are provided. It is also possible to set different numbers of patch areas 1 according to different needs. In the present embodiment, the 'high thermal conductivity column 9 is made of silver metal and has a thermal conductivity of about 430 W/mK. The high thermal conductivity column 9 can also be filled with metal such as silver, tungsten, molybdenum or copper. The longitudinal heat transfer effect of the ceramic package base. The above description is only a preferred embodiment of a high-power LED ceramic package base of the present invention, and is not intended to limit the technical scope of the present invention. Any minor modifications made to the above embodiments in accordance with the technical essence of the present invention. Equivalent changes and modifications are still within the scope of the technical content of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side view showing the overall structure of a conventional ceramic LED package base; FIG. 2 is a plan view showing the overall structure of a conventional ceramic LED package base; FIG. 3 is an overall structure of the first embodiment of the present invention. Figure 4 is a plan view of the overall structure of the first embodiment of the present invention; Figure 5 is a plan view of the overall structure of the second embodiment of the present invention; Figure 6 is a plan view of the overall structure of the second embodiment of the present invention; Figure 8 is a plan view showing the overall structure of a third embodiment of the present invention; Figure 9 is a plan view showing the overall structure of a fourth embodiment of the present invention; and Figure 10 is a plan view of the overall structure of the fourth embodiment of the present invention. 13 201019500 [Description of main component symbols] 1 ..... Patch area 2 .......... Line area 3 ..........Bottom pad 4 .......... Conductive through hole 5 .......... Reflective cup 6 .......... Thermal pad 7 ......... Optical lens mounting area 8 ..... secondary optical element mounting area 9 ..... (3⁄4 thermally conductive column 10 ... ... upper ceramic layer 11 ......... lower ceramic layer 12 ......... inorganic medium ginseng

1414

Claims (1)

201019500 十、申請專利範圍： 1. 一種高功率發光二極體陶瓷封裝基座，該基座由上陶究 層和下陶瓷層構成，上陶瓷層提供反射杯，在上陶瓷層 還設有用於安裝光學透鏡用的光學透鏡安裝區和用於安 裝二次光學元件的二次光學元件安裝區，下陶瓷層用於 安裝晶片並實現與底層電極電導通，下陶瓷層上側設有 用於安裝晶片的貼片區和通過焊接導線連接晶片電極的 打線區，下陶瓷層下側設有通過基座金屬化佈線實現與 晶片兩個電極連接的底部焊盤，基座還設有用於連接上 下兩層金屬化佈線以實現上下電導通的電導通孔，該電 導通孔可設在基座的内部或邊緣，上陶瓷層中的反射杯 起到聚光及反射增加亮度的作用，本發明的特徵在於： 所述的上陶瓷層和下陶瓷層由相同或不同的陶瓷材料製 成，兩陶瓷層間用無機介質燒結方式連接，用於提高封 裝基座整體機械強度及散熱性能，高溫氧化鋁和氮化鋁 陶瓷材料的熱導率分別為18〜20w/mK和17〇〜23〇 w/mK 〇 2.依據中請專利範圍第1項所述之高功率發光二極體陶竟 封裝基座’其特徵在於所述的無機介質為無機嫁封介質 材料。 3·依射請專利範圍第1項所述之高功率發光二極體陶甍 封裝基座，其特徵在於所述的反射杯由氧化㈣氮化銘 材料製成’在反射杯的反射^ ^ ^ 奶®7上冤鍍或真空濺射金屬層 ’用於提南反射杯的反射率。 15 1 S3 201019500 依據申明專利範圍第1項所述之高功率發光二極體陶瓷 封裝基座，其特徵在於所述的反射杯用LTCC材料製成 ’依靠材料自身良好的反光性提高反射杯的反射率。 依據申請專利la圍第1項所述之高功率發光二極體陶資 封裝基座，其特徵在於所述的下陶瓷層可以設有多個相 連的高導熱柱和散熱焊盤，高導熱柱設於下陶瓷層内部 ，高導熱柱的上側與貼片區相連接，高導熱柱用於將晶 片產生的熱導出，散熱焊盤設於下陶瓷層的下側，用於 參 將间導熱柱導出的熱散逸出來，高導熱柱的下側與散熱 焊盤相連接。 6. 依據申請專利範圍第5項所述之高功率發光二極體陶瓷 封裝基座，其特徵在於所述的高導熱柱由銀、鎢、鉬或 銅金屬填充而成，用於增強基座縱向傳熱效果。 7. —種高功率發光二極體陶瓷封裝基座的製法，其特徵在 於： 上陶瓷層先經過原料分散，再經壓制成型和燒結 •成； 、。 下陶瓷層先經過原料分散，再經成型、切片、沖孔 、灌封、平面印刷、疊層和壓槽工序，最後經燒結製作 而成； 在上述上陶瓷層和下陶瓷層製作完成後，將上陶竟 層疊設於下陶瓷層上側，上下層之間放置無機介質材料 再經對位、定位燒結結合和電鍍製成陶瓷封裝基座。 8. 依據申請專利範圍第7項所述之高功率發光二極體陶瓷 16 201019500201019500 X. Patent application scope: 1. A high-power light-emitting diode ceramic package base, which is composed of an upper ceramic layer and a lower ceramic layer, the upper ceramic layer provides a reflective cup, and the upper ceramic layer is further provided for An optical lens mounting area for mounting an optical lens and a secondary optical element mounting area for mounting a secondary optical element, the lower ceramic layer is used to mount the wafer and electrically connected to the bottom electrode, and the upper side of the lower ceramic layer is provided with a wafer for mounting the wafer. a patch area and a wire bonding area for connecting the wafer electrodes by soldering wires, and a bottom pad of the lower ceramic layer is provided with a base metallization wiring for connecting the two electrodes of the wafer, and the base is further provided for connecting the upper and lower layers of metal The wiring is electrically connected to the upper and lower sides. The conductive via can be disposed inside or at the edge of the pedestal. The reflective cup in the upper ceramic layer functions to collect and reflect the brightness, and the present invention is characterized in that: The upper ceramic layer and the lower ceramic layer are made of the same or different ceramic materials, and the two ceramic layers are connected by an inorganic medium sintering method for improving the package base. The overall mechanical strength and heat dissipation performance, the thermal conductivity of the high-temperature alumina and aluminum nitride ceramic materials are 18~20w/mK and 17〇~23〇w/mK respectively. According to the first paragraph of the patent scope. The high-power light-emitting diode ceramic package package base is characterized in that the inorganic medium is an inorganic grafting medium material. 3. The high-power light-emitting diode pottery package base according to item 1 of the patent scope is characterized in that the reflector cup is made of an oxidized (tetra) nitriding material, and the reflection in the reflector cup ^ ^ ^ Milk® 7 top plated or vacuum sputtered metal layer 'is used for the reflectivity of the south reflector cup. 15 1 S3 201019500 The high-power light-emitting diode ceramic package base according to claim 1, wherein the reflector cup is made of LTCC material, which relies on the good reflectivity of the material itself to improve the reflective cup. Reflectivity. The high-power light-emitting diode ceramic package base according to claim 1, wherein the lower ceramic layer may be provided with a plurality of connected high-heat-conducting columns and heat-dissipating pads, and a high-heat-conducting column. Located in the lower ceramic layer, the upper side of the high thermal conductivity column is connected to the patch area, the high thermal conductivity column is used to derive the heat generated by the wafer, and the heat dissipation pad is disposed on the lower side of the lower ceramic layer for the inter-conductive thermal column. The derived heat escapes and the underside of the high thermal conductivity column is connected to the thermal pad. 6. The high power light emitting diode ceramic package base according to claim 5, wherein the high heat conductive column is filled with silver, tungsten, molybdenum or copper metal for reinforcing the base. Longitudinal heat transfer effect. 7. A method for manufacturing a high-power light-emitting diode ceramic package base, characterized in that: the upper ceramic layer is first dispersed by a raw material, and then pressed and sintered; The lower ceramic layer is first dispersed through the raw material, and then formed by molding, slicing, punching, potting, planar printing, lamination and grooving, and finally sintered; after the above upper ceramic layer and the lower ceramic layer are completed, The upper ceramic layer is laminated on the upper side of the lower ceramic layer, and the inorganic dielectric material is placed between the upper and lower layers, and then the ceramic package base is formed by alignment, positioning sintering and electroplating. 8. High-power light-emitting diode ceramics according to item 7 of the patent application scope. 封裝基座的製法，其特徵在於所述的下陶瓷層用銀或銅 為金屬化材料，下陶瓷層先經過原料分散，再經成型、 切片、沖孔、壓槽、排膠、印孔、平面印刷工序，最後 經燒結製作而成。 17The method for manufacturing a package base is characterized in that the lower ceramic layer is made of silver or copper as a metallized material, and the lower ceramic layer is first dispersed through a raw material, and then formed, sliced, punched, grooved, discharged, and printed, The flat printing process is finally made by sintering. 17
TW97143496A 2008-07-15 2008-11-11 A ceramic packaging substrate for the high power LED TW201019500A (en)

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TWI797845B (en) * 2021-11-24 2023-04-01 財團法人工業技術研究院 Heat dissipation structure for package and chip having the same

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TWI595687B (en) * 2016-03-28 2017-08-11 一詮精密工業股份有限公司 Light emitting diode base structure
TWI797845B (en) * 2021-11-24 2023-04-01 財團法人工業技術研究院 Heat dissipation structure for package and chip having the same

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