CN101252163A - SMD high power LED ceramic packaging base - Google Patents
SMD high power LED ceramic packaging base Download PDFInfo
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- CN101252163A CN101252163A CNA2008100662548A CN200810066254A CN101252163A CN 101252163 A CN101252163 A CN 101252163A CN A2008100662548 A CNA2008100662548 A CN A2008100662548A CN 200810066254 A CN200810066254 A CN 200810066254A CN 101252163 A CN101252163 A CN 101252163A
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Abstract
The present invention relates to a ceramic packaging base, in particular to an SMD high power LED ceramic packaging base. The present invention consists of an upper ceramic layer and a lower ceramic layer, wherein the upper ceramic layer provides a reflection cup; the lower ceramic layer is used to install a chip and realize the electrical conduction with a bottom layer electrode; the upper side of the lower ceramic layer is provided with a patch area and a wire bonding area; the lower side of the lower ceramic layer is provided with a bottom bonding pad; the base is also provided with an electric conducting through hole; the lower ceramic layer is good in heat dissipation effect; if alumina ceramics is used for the lower ceramic layer, the lower ceramic layer is provided with a high thermal conductivity column and a heat dissipation bonding pad which are connected with each other; if high thermal conductivity aluminum nitride ceramics is used for the lower ceramic layer, the lower ceramic layer does not need to be provided with the high thermal conductivity column and the heat dissipation bonding pad. In order to raise light condensing and reflecting effect, the angle of the light reflection cup of the upper ceramic layer can be changed at will, and the cup wall of the light reflection cup is metallized and plated with high reflectivity material. The ceramic packaging base has the advantages of raising the heat dissipation performance of the SMD high power LED ceramic packaging base, improving the problem that temperature rise causes high light decay and life-span decrease of an LED chip, strengthening the performance of LED products in resisting high/low temperature and impact, raising the reliability as well as stability of products and reducing production cost.
Description
Technical field
The present invention relates to a kind of ceramic encapsulated base, refer more particularly to a kind of SMD high-power LED ceramic package base.
Background technology
LED is as a kind of new type light source, owing to have energy-saving and environmental protection, the life-span is long, toggle speed is fast, can control luminescent spectrum and forbid making the more high conventional light source incomparable advantage of chroma obtain developing on an unprecedented scale with the size of the width of cloth.Be accompanied by the increase of LED current strength and luminous quantity, the caloric value of led chip also rises thereupon, and for high-capacity LED, 80% of the input energy all consumes with the form of heat.If these heats can not in time be discharged the external world, cause the temperature-rise effect of chip, the life-span of LED and light output all can be had a greatly reduced quality; The pyroconductivity of the epoxy encapsulation pedestal that tradition is used only is 0.47W/mK, can not satisfy the heat radiation requirement of high-power LED far away.In recent years progressively substituted by the aluminum metal substrate of high thermal conductivity, the insulated influence of organic material of aluminium base, pyroconductivity is 1～2.2W/mK, can satisfy the encapsulation requirement of part higher-wattage LED, but the thermal coefficient of expansion and the led chip of aluminium base are widely different, it is crooked that very big or packaging operation does not very easily produce heat at that time when variations in temperature, causes chip flaw and luminous efficiency and reduce.Because LED brightness increases with the increase of drive current, to the LED of high brightness more, aluminium base can't satisfy its heat radiation requirement, but ceramic encapsulated base can effectively address these problems the desirable cooling base material that becomes high-capacity LED because of having thermal conductivity height, thermal coefficient of expansion and high-brightness LED crystal coupling, electric simulation strength height design reflectivity cup and heat conduction through hole etc.
The product structure of existing ceramic packaging technology as shown in Figure 1, it is made of two-layer ceramic, upper strata cremasteric reflex cup, chip is installed by lower floor, and realization and bottom electrode conduct.Wherein Chip Area 1 is used to install chip; Routing district 2 connects the electrode of chip by welding lead; Bottom land 3 is by pedestal metallization wiring, and realization is connected with two electrodes of chip; Conduct hole 4 and connect double-layer metallization wiring up and down, realize the power-on and power-off conducting; Reflector 5 plays the effect of optically focused and reflection increase brightness.
1), epoxy encapsulation pedestal and aluminium base thermal conductivity be low the shortcoming of above-mentioned encapsulation and cause reason to comprise:, and thermal coefficient of expansion and high-capacity LED chip differ too big, cause luminous efficiency and life-span to be had a greatly reduced quality, fail to reach high power, long-life specification requirement.2), existing ceramic encapsulated base shortcoming: do not use highly heat-conductive material or establish high heating column, package cooling is poor; Wall of cup does not metallize or uses highly reflective material, and encapsulation optically focused and reflecting effect are poor.
Based on the weak point of existing ceramic encapsulated base, the inventor has designed " a kind of SMD high-power LED ceramic package base ".
Summary of the invention
The present invention is directed to above-mentioned the deficiencies in the prior art technical problem to be solved is: a kind of raising SMD high-capacity LED encapsulation base heat dispersion is provided; Strengthen LED product high-low temperature resistant degree impact property, improve reliability of products, stability; Reduce production costs, promote the SMD high-power LED ceramic package base that the SMD high-power LED ceramic package base is applied.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of SMD high-power LED ceramic package base, this pedestal is made of last ceramic layer and following ceramic layer, last ceramic layer cremasteric reflex cup, following ceramic layer is used to install chip and realizes conducting with bottom electrode, following ceramic layer upside is provided with the routing district that is used to that the Chip Area of chip is installed and passes through welding lead connection-core plate electrode, following ceramic layer downside is provided with the bottom land that is connected with two electrodes of chip by pedestal metallization wiring realization, pedestal also is provided with and is used to connect double-layer metallization wiring up and down to realize the hole that conducts of power-on and power-off conducting, this conducts inside or edge that the hole can be located at pedestal, reflector in the last ceramic layer plays the effect of optically focused and reflection increase brightness, the described ceramic layer of going up is made by high temperature alumina or aluminium nitride ceramics material with following ceramic layer, and the thermal conductivity of aluminium oxide ceramics and aluminium nitride ceramics is about 18～20W/mK and 170～230W/mK respectively.
The described ceramic layer of going up is made by the high-temperature oxydation aluminum with following ceramic layer, the heat radiation pad is connected with high heating column, high heating column is located at down ceramic layer inside, the upside of high heating column is connected with the Chip Area, high heating column is used for the thermal conductance that chip produces is gone out, the heat radiation pad is located at down the downside of ceramic layer, is used for the heat dissipation that high heating column is derived is come out, and the downside of high heating column is connected with the heat radiation pad.
The described reflector angle that goes up ceramic layer can change arbitrarily, and the wall of cup metallization of reflector also is electroplate with high reflecting material.
Described high heating column forms by tungsten is metal filled, and its thermal conductivity is about 200W/mK.
Described pedestal is made by high temperature alumina or aluminium nitride ceramics material, its thermal conductivity is about 18～20W/mK and 170～230W/mK respectively, high heating column forms by tungsten is metal filled, and its thermal conductivity is about 200W/mK, has well solved the key issue of pedestal heat radiation.
The technological process of production of the present invention is:
Raw material dispersion → curtain coating → section → punching (chamber) → embedding (seal hole) → planographic → lamination/pressurization → cutting → binder removal/sintering → plating.
Raw material disperse: by certain proportioning ceramic powders, organic bond, solvent and other auxiliary agent are formed ceramic size by processes such as ball millings.
Curtain coating: the ceramic size that processes is coated on the film equably, and oven dry obtains the ceramic green band.
Section: the ceramic green band that curtain coating is made cuts into the ceramic green sheet of certain size.
Punching (chamber): according to the product design needs, punching out through hole or cavity on the ceramic green sheet of well cutting.
Embedding (seal hole): as required, with through hole on the metal paste filling ceramic green sheet or the through hole hole wall close plating slurry on ceramic green sheet.
Planographic: according to product design, at ceramic green sheet surface printing conductive pattern.
Lamination/pressurization: according to product design, several single-layer ceramic raw cooks that machined are superimposed together and pressurize forms whole ceramic BAR piece.
Cutting: the ceramic BAR piece that will fold/press forms the groove of certain depth by designing requirement cutting, so that follow-uply be divided into single product.
Binder removal/sintering: the organic substance in the green compact that machine is got rid of totally by high temperature, and sintering forms fine and close integral body under reducing atmosphere.
Electroplate: plate required bright metal layer on the surface of metal layer.
The beneficial effect of a kind of SMD high-power LED ceramic package base of the present invention is:
Improve SMD high-capacity LED encapsulation base heat dispersion, improve because of temperature rise causes the led chip light decay reaching the problem that the life-span descends greatly; Strengthen LED product high-low temperature resistant degree impact property, improve reliability of products, stability; Reduce production costs.Compared with prior art, the present invention possesses following characteristics is arranged:
(1) thermal diffusivity is good: LED ceramic encapsulated base base material of the present invention is high temperature alumina or aluminium nitride ceramics, its thermal conductivity is about 18～20W/mK and 170～230W/mK respectively, aluminium oxide ceramics is provided with the metal filled high heating column with W in the pedestal Chip Area, the heating column bottom is provided with the heat radiation pad.Its thermal conductivity is about 200W/mK, has well solved the key issue of pedestal heat radiation.
(2) but the design reflectivity cup: the reflection wall of cup has metallization and electroplates a floor height reflecting material such as a silver, strengthens the output of light, and angle of reflection can change arbitrarily as required, the emission angle of control light.
(3) thermal coefficient of expansion and high-capacity LED chip are near (chip is 5.5ppm/k, aluminium oxide ceramics is 6.0～6.7ppm/k, the about 3.3ppm/k of AIN pottery, the W metal is 4.5ppm/k), high-low temperature resistant degree impact property is strong, improves LED reliability of products, stability.
(4) use aluminium oxide ceramics and tungsten metal material, greatly reduce production cost.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the overall structure end view of existing ceramic LED encapsulation base;
Fig. 2 is the overall structure end view of the embodiment of the invention one;
Fig. 3 is the overall structure vertical view of the embodiment of the invention one;
Fig. 4 is the overall structure upward view of the embodiment of the invention one;
Fig. 5 is the overall structure end view of the embodiment of the invention two;
Fig. 6 is the overall structure vertical view of the embodiment of the invention two;
Fig. 7 is the overall structure upward view of the embodiment of the invention two.
Description of reference numerals
10, go up ceramic layer 20, following ceramic layer 1, Chip Area
2, routing district 3, bottom land 4, conduct the hole
5, reflector 6, high heating column 7, heat radiation pad
Embodiment
With reference to Fig. 2 to Fig. 7, the present invention implements like this:
A kind of SMD high-power LED ceramic package base is made of last ceramic layer (10) and following ceramic layer (20), pedestal is made by high temperature alumina or aluminium nitride ceramics material, its thermal conductivity is about 18～20W/mK and 170～230W/mK respectively, last ceramic layer (10) cremasteric reflex cup (5), following ceramic layer (20) is used to install chip and realizes conducting with bottom electrode, following ceramic layer (20) upside is provided with Chip Area (1) that is used to install chip and the routing district (2) that passes through welding lead connection-core plate electrode, following ceramic layer (20) downside is provided with the bottom land (3) that is connected with two electrodes of chip by pedestal metallization wiring realization, pedestal also is provided with and is used to connect double-layer metallization wiring up and down and conducts hole (4) with what realize the power-on and power-off conducting, and this conducts inside or edge that hole (4) is located at pedestal; Reflector (5) in the last ceramic layer (10) plays the effect of optically focused and reflection increase brightness, following ceramic layer (20) is if use aluminium oxide ceramics, then be provided with continuous high heating column (6) and heat radiation pad (7), high heating column (6) is located at down ceramic layer (20) inside, the upside of high heating column (6) is connected with Chip Area (1), high heating column (6) is used for the thermal conductance that chip produces is gone out, heat radiation pad (7) is located at down the downside of ceramic layer (20), be used for the heat dissipation that high heating column (6) is derived is come out, the downside of high heating column (6) is connected with heat radiation pad (7).Use high heat conduction aluminium nitride ceramics then need not design high heating column (6) and heat radiation pad (7).For improving optically focused and reflecting effect, last ceramic layer (10) reflector (5) angle can change arbitrarily and wall of cup metallization and the high reflection of plating ag material.
The above only is a class embodiment of a kind of SMD high-power LED ceramic package base of the present invention, and only is the embodiment of encapsulation single-chip.The present invention also can be according to the packaged chip number, and wiring figure is done corresponding change with the following ceramic layer number of plies.Be not that technical scope of the present invention is imposed any restrictions in addition yet, every foundation technical spirit of the present invention is to any trickle modification such as heating column number that top embodiment did, similar equivalent variations such as shape and modification all still belong in the scope of the technology of the present invention content.
Claims (4)
1. SMD high-power LED ceramic package base, this pedestal is made of last ceramic layer (10) and following ceramic layer (20), last ceramic layer (10) cremasteric reflex cup (5), following ceramic layer (20) is used to install chip and realizes conducting with bottom electrode, following ceramic layer (20) upside is provided with Chip Area (1) that is used to install chip and the routing district (2) that passes through welding lead connection-core plate electrode, following ceramic layer (20) downside is provided with the bottom land (3) that is connected with two electrodes of chip by pedestal metallization wiring realization, pedestal also is provided with and is used to connect double-layer metallization wiring up and down and conducts hole (4) with what realize the power-on and power-off conducting, this conducts inside or edge that hole (4) is located at pedestal, reflector (5) in the last ceramic layer (10) plays the effect of optically focused and reflection increase brightness, the invention is characterized in: described upward ceramic layer (10) and following ceramic layer (20) are made by high temperature alumina or aluminium nitride ceramics material, and the thermal conductivity of aluminium oxide ceramics and aluminium nitride ceramics is respectively 18～20W/mK and 170～230W/mK.
2. a kind of SMD high-power LED ceramic package base according to claim 1, it is characterized in that describedly going up ceramic layer (10) and following ceramic layer (20) is made by the high-temperature oxydation aluminum, this time ceramic layer is provided with the heat radiation pad (7) and the high heating column (6) on phase limit, high heating column (6) is located at down ceramic layer (20) inside, the upside of high heating column (6) is connected with Chip Area (1), downside connects heat radiation pad (7), high heating column (6) is used for the thermal conductance that chip produces is gone out, heat radiation pad (7) is located at down the downside of ceramic layer (20), is used for the heat dissipation that high heating column (6) is derived is come out.
3. a kind of SMD high-power LED ceramic package base according to claim 1 and 2, it is characterized in that described reflector (5) angle that goes up ceramic layer (10) can change arbitrarily, the emission angle of control light, the wall of cup metallization of reflector (5) also is electroplate with high reflecting material, strengthens the output of light.
4. a kind of SMD high-power LED ceramic package base according to claim 2 is characterized in that described high heating column (6) forms by tungsten is metal filled, and its thermal conductivity is about 200W/mK.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100662548A CN101252163A (en) | 2008-03-27 | 2008-03-27 | SMD high power LED ceramic packaging base |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100662548A CN101252163A (en) | 2008-03-27 | 2008-03-27 | SMD high power LED ceramic packaging base |
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| CN101252163A true CN101252163A (en) | 2008-08-27 |
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| CNA2008100662548A Pending CN101252163A (en) | 2008-03-27 | 2008-03-27 | SMD high power LED ceramic packaging base |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010006475A1 (en) * | 2008-07-15 | 2010-01-21 | 潮州三环（集团）股份有限公司 | A ceramic packaging substrate for the high power led |
| CN102738352A (en) * | 2011-04-13 | 2012-10-17 | 展晶科技(深圳)有限公司 | Led packaging structure |
| CN103390708A (en) * | 2012-05-10 | 2013-11-13 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulation structure and manufacturing method thereof |
| CN103579450A (en) * | 2012-08-10 | 2014-02-12 | 展晶科技(深圳)有限公司 | Light-emitting diode lamp bar |
| CN103682046A (en) * | 2013-12-23 | 2014-03-26 | 中山市秉一电子科技有限公司 | Ceramic substrate for LED |
| CN106209005A (en) * | 2016-08-01 | 2016-12-07 | 安徽贝莱电子科技有限公司 | A kind of production technology of quartz-crystal resonator base of ceramic |
| CN106876556A (en) * | 2017-04-21 | 2017-06-20 | 武汉华尚绿能科技股份有限公司 | A kind of back sticking type paster LED for being exclusively used in transparency carrier |
| CN106898605A (en) * | 2017-04-21 | 2017-06-27 | 武汉华尚绿能科技股份有限公司 | A kind of IC implanted paster LEDs for being exclusively used in transparency carrier |
| CN107834989A (en) * | 2017-11-08 | 2018-03-23 | 中国电子科技集团公司第二十六研究所 | High-heat-dissipation ceramic shell structure applied to film bulk acoustic wave device |
| CN108321283A (en) * | 2018-04-03 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of package support and its packaging method of specular removal ultraviolet LED |
| CN108963045A (en) * | 2017-05-19 | 2018-12-07 | 东莞昶通精密五金有限公司 | A kind of white light LEDs bracket of high reliability |
| CN111123620A (en) * | 2014-06-17 | 2020-05-08 | 亮锐控股有限公司 | Flash module comprising an array of reflector cups of phosphor converted LEDs |
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2008
- 2008-03-27 CN CNA2008100662548A patent/CN101252163A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI409974B (en) * | 2008-07-15 | 2013-09-21 | ||
| WO2010006475A1 (en) * | 2008-07-15 | 2010-01-21 | 潮州三环（集团）股份有限公司 | A ceramic packaging substrate for the high power led |
| CN102738352A (en) * | 2011-04-13 | 2012-10-17 | 展晶科技(深圳)有限公司 | Led packaging structure |
| CN102738352B (en) * | 2011-04-13 | 2016-01-06 | 展晶科技(深圳)有限公司 | LED encapsulation structure |
| CN103390708A (en) * | 2012-05-10 | 2013-11-13 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulation structure and manufacturing method thereof |
| CN103390708B (en) * | 2012-05-10 | 2016-01-06 | 展晶科技(深圳)有限公司 | Package structure for LED and manufacture method thereof |
| CN103579450A (en) * | 2012-08-10 | 2014-02-12 | 展晶科技(深圳)有限公司 | Light-emitting diode lamp bar |
| CN103682046A (en) * | 2013-12-23 | 2014-03-26 | 中山市秉一电子科技有限公司 | Ceramic substrate for LED |
| CN111123620A (en) * | 2014-06-17 | 2020-05-08 | 亮锐控股有限公司 | Flash module comprising an array of reflector cups of phosphor converted LEDs |
| US11320722B2 (en) | 2014-06-17 | 2022-05-03 | Lumileds Llc | Flash module containing an array of reflector cups for phosphor-converted LEDs |
| CN106209005A (en) * | 2016-08-01 | 2016-12-07 | 安徽贝莱电子科技有限公司 | A kind of production technology of quartz-crystal resonator base of ceramic |
| CN106898605A (en) * | 2017-04-21 | 2017-06-27 | 武汉华尚绿能科技股份有限公司 | A kind of IC implanted paster LEDs for being exclusively used in transparency carrier |
| CN106876556A (en) * | 2017-04-21 | 2017-06-20 | 武汉华尚绿能科技股份有限公司 | A kind of back sticking type paster LED for being exclusively used in transparency carrier |
| CN108963045A (en) * | 2017-05-19 | 2018-12-07 | 东莞昶通精密五金有限公司 | A kind of white light LEDs bracket of high reliability |
| CN107834989A (en) * | 2017-11-08 | 2018-03-23 | 中国电子科技集团公司第二十六研究所 | High-heat-dissipation ceramic shell structure applied to film bulk acoustic wave device |
| CN108321283A (en) * | 2018-04-03 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of package support and its packaging method of specular removal ultraviolet LED |
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Open date: 20080827 |