CN102738352A - Led packaging structure - Google Patents
Led packaging structure Download PDFInfo
- Publication number
- CN102738352A CN102738352A CN2011100913590A CN201110091359A CN102738352A CN 102738352 A CN102738352 A CN 102738352A CN 2011100913590 A CN2011100913590 A CN 2011100913590A CN 201110091359 A CN201110091359 A CN 201110091359A CN 102738352 A CN102738352 A CN 102738352A
- Authority
- CN
- China
- Prior art keywords
- heat dissipation
- dissipation element
- encapsulating structure
- led
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
The invention provides a LED packaging structure which comprises a first heat dissipation element, a second heat dissipation element, two electrodes, a LED chip and a packaging layer. The first heat dissipation element is used to set the two electrodes and the LED chip and to achieve electrical connection of the two electrodes and the LED chip. The second heat dissipation element is arranged in the first heat dissipation element and is located on a position opposite to the LED chip. The packaging layer covers the LED chip. The second heat dissipation element of the invention can accelerate outward thermal conduction of heat energy of the LED chip through the first heat dissipation element so that a service life of the LED packaging structure is prolonged.
Description
Technical field
The present invention relates to a kind of LED encapsulating structure, relate in particular to a kind of LED encapsulating structure with preferable heat dissipation.
Background technology
The LED industry is one of industry that attracted most attention in recent years, development so far, that the LED product has had is energy-conservation, power saving, high efficiency, the reaction time is fast, the life cycle time is long and not mercurous, have advantage such as environmental benefit.Yet under the utilization trend of LED high power, brightness and high-density packages, its heat dissipation problem faces more and more acid test, if do not solve the life-span that will have a strong impact on LED in good time.Usually can use the carrier substrate of led chip to assist heat radiation in the LED encapsulating structure, for example adopt ceramic substrate or metal substrate.These substrates with heat dissipation have certain radiating efficiency because of the material behavior restriction; LED is the point-source of light of a high heat flux; Only depend on the heat radiation of pottery or metal material, can't the focus rapid diffusion still be apparent not enough for safeguarding on the LED effect in useful life.In addition; The electrode of LED encapsulating structure also is the material of a high thermal conductivity; Therefore when LED with surface mount technology SMT (Surface Mount Technology) when being arranged at circuit board, the high temperature of welding possibly cause what is called to climb tin problem (claiming the SMT wick effect again), and produces the defective of welding.So how to improve the radiating efficiency of LED fast and effectively, remain the problem that enterprise need solve.
Summary of the invention
In view of this, be necessary to provide a kind of and accelerate radiating efficiency, avoid climbing the LED encapsulating structure of tin reaction.
A kind of LED encapsulating structure, it comprises one first heat dissipation element, second heat dissipation element, two electrodes, a led chip and an encapsulated layer.Said first heat dissipation element is in order to being provided with said two electrodes and said led chip, and makes said two electrodes and said led chip reach electric connection.The said second heat dissipation element bank places in said first heat dissipation element, and is positioned at the relative position of said led chip.Said encapsulated layer covers said led chip.
Above-mentioned LED encapsulating structure; Because said second heat dissipation element is positioned at said first heat dissipation element; And with respect to the position of said led chip; The heat that can directly said first heat dissipation element be conducted externally spreads out of rapidly, increases the externally efficient of heat radiation of said LED encapsulating structure, thereby improves the maintenance in its useful life.
Description of drawings
Fig. 1 is the cutaway view of first embodiment of the invention LED encapsulating structure.
Fig. 2 is Fig. 1 first execution mode LED encapsulating structure vertical view.
Fig. 3 is the cutaway view of second embodiment of the invention LED encapsulating structure.
Fig. 4 is Fig. 3 second execution mode LED encapsulating structure vertical view.
Fig. 5 is the cutaway view of third embodiment of the invention LED encapsulating structure.
The main element symbol description
| The |
10、20、30 |
| First |
12、22、32 |
| Groove | 120、220 |
| |
122、222、322 |
| The |
124、224 |
| The |
126、226 |
| Second |
14、24、34 |
| Electrode | 15、25、35 |
| Led |
16、26、36 |
| |
162、262 |
| Encapsulated |
18、28、38 |
| |
29 |
| Reflector | 39 |
Following embodiment will combine above-mentioned accompanying drawing to further specify the present invention.
Embodiment
To combine accompanying drawing that the present invention is done one below specifically introduces.
See also Fig. 1, be depicted as first embodiment of the invention LED encapsulating structure 10, it comprises one first heat dissipation element 12, one second heat dissipation element 14, two electrodes 15, a led chip 16 and an encapsulated layer 18.Said first heat dissipation element 12 has an end face 122 and a relative bottom surface 124; Said end face 122 is in order to be provided with said two electrodes 15 and said led chip 16, and said led chip 16 is reached electric connection through conductor wire 162 and said two electrodes 15.Said second heat dissipation element 14 is put in order to bank in said bottom surface 124, and said second heat dissipation element 14 is oppositely arranged with said led chip 16.15 1 at said two electrodes are positive electrode, and one is negative electrode, is arranged at the both sides of said end face 122 respectively, and extends to the side 126 of said first heat dissipation element 12 by said end face 122.The thickness of electrode of said two electrodes 15 forms a groove 120 at the central part of said end face 122, and said groove 120 is in order to be provided with said led chip 16.The area of said groove 120 greater than the area of said second heat dissipation element 14 (such as dotted line among Fig. 2 sign), the area of said led chip 16 is then less than the area of said second heat dissipation element 14.The material of said first heat dissipation element 12 is insulating material of silicon, pottery or high heat conduction.The material of said second heat dissipation element 14 is metal or highly heat-conductive material.The thermal conduction rate of said first heat dissipation element 12 is less than the thermal conduction rate of said second heat dissipation element 14.Said encapsulated layer 18 covers said led chip 16, and the material of said encapsulated layer 18 is transparent materials, for example, and silica resin (Silicone) or epoxy resin (Epoxy) material.Said encapsulated layer 18 can comprise at least a fluorescent material (not indicating among the figure).
The above-mentioned first execution mode LED encapsulating structure 10, said led chip 16 is positioned on the end face 122 of said first heat dissipation element 12, and the high heat that its luminous running produced is dispelled the heat through said first heat dissipation element 12.Said second heat dissipation element, 14 banks place in said first heat dissipation element 12; And be positioned at the relative position place of said led chip; The high heat that said led chip 16 places produce can externally be dispelled the heat by said second heat dissipation element 14 through behind said first heat dissipation element 12 again.Therefore the thermal conduction rate of said second heat dissipation element 14 is greater than said first heat dissipation element 12, and said second heat dissipation element 14 can and quicken the high heat that said led chip place produces is dispelled the heat through said first heat dissipation element 12.Compared to the fixing rate of heat dispation of general heat dissipation element, the high heat that this execution mode LED encapsulating structure 10 can produce said led chip 16 places is more quickly dispelled the heat.The quick heat radiating effect of said second heat dissipation element 14 obviously more can be safeguarded effectively the useful life of said LED encapsulating structure 10, and keep its good luminous efficacy.
Please consulting Fig. 3 again, is the cutaway view of second embodiment of the invention LED encapsulating structure.Said LED encapsulating structure 20 is identical with the said first execution mode LED encapsulating structure 10 basically, and it comprises one first heat dissipation element 22, one second heat dissipation element 24, two electrodes 25, a led chip 26 and an encapsulated layer 28.Said first heat dissipation element 22 has an end face 222 and a relative bottom surface 224; Said end face 222 is in order to be provided with said two electrodes 25 and said led chip 26, and said led chip 26 is reached electric connection through conductor wire 262 and said two electrodes 25.Said second heat dissipation element 24 is put in order to bank in said bottom surface 224, and said second heat dissipation element 24 is oppositely arranged with said led chip 26.The thickness of electrode of said two electrodes 25 forms a groove 220 at the central part of said end face 222, and said groove 220 is in order to be provided with said led chip 26.Said encapsulated layer 28 covers said led chip 26.Difference is; Said two electrodes 25 extend to the side 226 of said first heat dissipation element 22 from said end face 222 both sides, form pit 29 between the thickness of electrode of said two electrodes 25 and the said bottom surface 224.When said pit 29 was arranged at circuit board at said LED encapsulating structure 20, said pit 29 can provide the accommodation space as scolder, prevent the high temperature when scolder is following the 25 conduction welding of said electrode and produce climb the tin phenomenon.In addition, the anti-creep tin effect of said pit 29 can increase to improve the external radiating efficiency of said LED encapsulating structure 20 when being arranged at circuit board the area of said second heat dissipation element 24.The area of said second heat dissipation element 24 is greater than the area (as shown in Figure 4) of said groove 220, and the side 226 that said second heat dissipation element 24 is extended near said first heat dissipation element 22 increases the radiating efficiency when welding, and safeguards said LED encapsulating structure 20.
At last, please consulting Fig. 5 again, is the cutaway view of third embodiment of the invention LED encapsulating structure.Said LED encapsulating structure 30 is identical with the said first execution mode LED encapsulating structure 10 basically, and it comprises one first heat dissipation element 32, one second heat dissipation element 34, two electrodes 35, a led chip 36 and an encapsulated layer 38.Because basic structural feature is identical so repeat no more.Difference is; Have a reflector 39 on the said end face 322 of said first heat dissipation element 32 and be provided with, said reflector 39 is surrounded on the periphery of said end face 322.Said reflector 39 is with the moulding of mould model (Molding) mode, helps to promote the luminous efficacy of said LED encapsulating structure 30.The material of said reflector 39 is plastics or high molecular material, for example, and PPA (Polyphthalamide) plastics or epoxide resin material.
To sum up; Said second heat dissipation element of LED encapsulating structure of the present invention is positioned at said first heat dissipation element; And be positioned on the relative position of said led chip, and the thermal conduction rate of said second heat dissipation element is greater than said first heat dissipation element, the high heat that said led chip is produced can be quickened externally conduction by said second heat dissipation element; Thereby can increase the externally efficient of heat radiation of said LED encapsulating structure, improve it and safeguard the life-span of using.
In addition, those skilled in the art also can do other variation in spirit of the present invention, and certainly, these all should be included within the present invention's scope required for protection according to the variation that the present invention's spirit is done.
Claims (13)
1. LED encapsulating structure; It comprises one first heat dissipation element, second heat dissipation element, two electrodes, a led chip and an encapsulated layer, and said first heat dissipation element is in order to being provided with said two electrodes and said led chip, and makes said two electrodes and said led chip reach electric connection; The said second heat dissipation element bank places in said first heat dissipation element; And being positioned at the relative position of said led chip, said encapsulated layer covers said led chip.
2. LED encapsulating structure as claimed in claim 1; It is characterized in that: said first heat dissipation element; Have an end face and a relative bottom surface, said end face is in order to be provided with said two electrodes and said led chip, and said second heat dissipation element is put in order to bank in said bottom surface.
3. LED encapsulating structure as claimed in claim 1 is characterized in that: said first heat dissipation element, material are the insulating material of silicon, pottery or high heat conduction.
4. LED encapsulating structure as claimed in claim 1 is characterized in that: said first heat dissipation element, thermal conduction rate is less than the thermal conduction rate of said second heat dissipation element.
5. LED encapsulating structure as claimed in claim 1 is characterized in that: said second heat dissipation element, material are metal or highly heat-conductive material.
6. LED encapsulating structure as claimed in claim 1; It is characterized in that: said two electrodes, one is positive electrode, one is negative electrode; Both sides by the said first heat dissipation element end face extend to the side; The thickness of electrode of said two electrodes forms a groove at the central part of said end face, and said groove is provided with said led chip, and said led chip is reached electric connection through conductor wire and said two electrodes.
7. LED encapsulating structure as claimed in claim 6 is characterized in that: said groove, area are greater than the area of said second heat dissipation element, and the area of said led chip is less than the area of said second heat dissipation element.
8. LED encapsulating structure as claimed in claim 6 is characterized in that: the thickness of electrode of said two electrodes, between the side of said first heat dissipation element and said bottom surface, form pit, and make the area of the area of said second heat dissipation element greater than said groove.
9. LED encapsulating structure as claimed in claim 1 is characterized in that: said encapsulated layer, material are transparent materials, comprise silica resin (Silicone) or epoxy resin (Epoxy) material.
10. LED encapsulating structure as claimed in claim 1 is characterized in that: said encapsulated layer comprises at least a fluorescent material.
11. LED encapsulating structure as claimed in claim 1 is characterized in that: said first heat dissipation element, have a reflector setting, said reflector is surrounded on the end face periphery of said first heat dissipation element.
12. LED encapsulating structure as claimed in claim 11 is characterized in that: said reflector is with the moulding of mould model mode.
13. LED encapsulating structure as claimed in claim 11 is characterized in that: said reflector, material are plastics or high molecular material, for example, and PPA (Polyphthalamide) plastics or epoxide resin material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110091359.0A CN102738352B (en) | 2011-04-13 | 2011-04-13 | LED encapsulation structure |
| TW100114548A TWI447974B (en) | 2011-04-13 | 2011-04-27 | Structure of the led package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110091359.0A CN102738352B (en) | 2011-04-13 | 2011-04-13 | LED encapsulation structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102738352A true CN102738352A (en) | 2012-10-17 |
| CN102738352B CN102738352B (en) | 2016-01-06 |
Family
ID=46993484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110091359.0A Expired - Fee Related CN102738352B (en) | 2011-04-13 | 2011-04-13 | LED encapsulation structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102738352B (en) |
| TW (1) | TWI447974B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545426A (en) * | 2013-10-31 | 2014-01-29 | 桂林福冈新材料有限公司 | LED support |
| CN103560198A (en) * | 2013-11-08 | 2014-02-05 | 桂林机床电器有限公司 | LED packaging structure |
| CN107994108A (en) * | 2017-12-26 | 2018-05-04 | 深圳市灏天光电有限公司 | A kind of anti-fracture stent and its production method |
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| US20050205889A1 (en) * | 2004-03-16 | 2005-09-22 | Hsing Chen | Light emitting diode package with high power |
| CN1828951A (en) * | 2005-03-03 | 2006-09-06 | 宏齐科技股份有限公司 | Diode packaging structure for preventing short circuit and its making method |
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| US20090052483A1 (en) * | 2007-08-20 | 2009-02-26 | Young Optics Inc. | Optoelectronic semiconductor package and method for attaching heat dissipation element thereto |
| US20090061550A1 (en) * | 2005-07-20 | 2009-03-05 | Samsung Electro-Mechanics Co., Ltd. | Led package and fabricating method thereof |
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| JP5060172B2 (en) * | 2007-05-29 | 2012-10-31 | 岩谷産業株式会社 | Semiconductor light emitting device |
| TWM386441U (en) * | 2010-03-18 | 2010-08-11 | Uei Shy Entpr Co Ltd | Integrated one-piece ceramic heat dissipation device |
-
2011
- 2011-04-13 CN CN201110091359.0A patent/CN102738352B/en not_active Expired - Fee Related
- 2011-04-27 TW TW100114548A patent/TWI447974B/en not_active IP Right Cessation
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20070292979A1 (en) * | 2003-02-07 | 2007-12-20 | Sanyo Electric Co., Ltd. | Semiconductor device and method of fabricating the same |
| US20090302344A1 (en) * | 2003-04-01 | 2009-12-10 | Sharp Kabushiki Kaisha | Light-emitting apparatus package, light-emitting apparatus, backlight apparatus, and display apparatus |
| CN1612369A (en) * | 2003-10-30 | 2005-05-04 | 京瓷株式会社 | Light-emitting element reception package, light-emitting device and lighting device |
| US20050205889A1 (en) * | 2004-03-16 | 2005-09-22 | Hsing Chen | Light emitting diode package with high power |
| CN1828951A (en) * | 2005-03-03 | 2006-09-06 | 宏齐科技股份有限公司 | Diode packaging structure for preventing short circuit and its making method |
| US20090061550A1 (en) * | 2005-07-20 | 2009-03-05 | Samsung Electro-Mechanics Co., Ltd. | Led package and fabricating method thereof |
| US20070126020A1 (en) * | 2005-12-03 | 2007-06-07 | Cheng Lin | High-power LED chip packaging structure and fabrication method thereof |
| CN101127377A (en) * | 2006-08-16 | 2008-02-20 | 晶元光电股份有限公司 | LED device and lighting chip |
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| CN101252163A (en) * | 2008-03-27 | 2008-08-27 | 潮州三环（集团）股份有限公司 | SMD high power LED ceramic packaging base |
| CN101276869A (en) * | 2008-05-04 | 2008-10-01 | 潮州市三江电子有限公司 | Ceramic heat radiation substrate for sheet-shaped LED encapsulation |
| CN101350390A (en) * | 2008-08-21 | 2009-01-21 | 旭丽电子(广州)有限公司 | LED encapsulation structure |
| CN101814569A (en) * | 2009-02-23 | 2010-08-25 | Lg伊诺特有限公司 | Light emitting device package |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545426A (en) * | 2013-10-31 | 2014-01-29 | 桂林福冈新材料有限公司 | LED support |
| CN103560198A (en) * | 2013-11-08 | 2014-02-05 | 桂林机床电器有限公司 | LED packaging structure |
| CN107994108A (en) * | 2017-12-26 | 2018-05-04 | 深圳市灏天光电有限公司 | A kind of anti-fracture stent and its production method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201242123A (en) | 2012-10-16 |
| TWI447974B (en) | 2014-08-01 |
| CN102738352B (en) | 2016-01-06 |
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Granted publication date: 20160106 Termination date: 20200413 |
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