TW201242123A - Structure of the LED package - Google Patents

Structure of the LED package Download PDF

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Publication number
TW201242123A
TW201242123A TW100114548A TW100114548A TW201242123A TW 201242123 A TW201242123 A TW 201242123A TW 100114548 A TW100114548 A TW 100114548A TW 100114548 A TW100114548 A TW 100114548A TW 201242123 A TW201242123 A TW 201242123A
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TW
Taiwan
Prior art keywords
heat dissipating
dissipating component
package structure
led package
led
Prior art date
Application number
TW100114548A
Other languages
Chinese (zh)
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TWI447974B (en
Inventor
Ming-Ta Tsai
Ching-Chung Chen
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Advanced Optoelectronic Tech
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Publication of TW201242123A publication Critical patent/TW201242123A/en
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Publication of TWI447974B publication Critical patent/TWI447974B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

This invention provides a structure of the LED package, which includes a first heat sink, a second heat sink, two electrodes, a LED chip and an encapsulation layer. The first heat sink use to mount the two electrodes and the LED chip, and makes electric connection with two electrodes and the LED chip. The second heat sink is ridge sets in the first heat sink, and on the relative position of the LED chip. The encapsulation layer is covering the LED chip.

Description

201242123 六、發明說明： 【發明所屬之技術領域】 _树明涉及-種LED封裝結構，尤其涉及—種具有較佳散 熱效能的LED封裝結構。 【先前技術】 _] LED產業是近幾年最受褐目的產業之―，發展至今，LED 產品已具有節能、省電、高效率、反應時間快、壽命週 期時間長、且不含汞、具有環保效益等優點。然而LED高 功率、亮度與⑽、度封|的運用趨勢下，其散熱問題面 臨愈來愈嚴峻的考驗，如果不適時解決將嚴重影響LED的 壽命。LED封裝結構中通常會使用LED晶片的載體基板協 助散熱，例如採用陶瓷基板或是金屬基板。這些具有散 熱效能的基板因材料特性限制而有一定的散熱效率，但 是LED為一高熱流密度的點光源，僅靠陶瓷或是金屬材料 散熱，無法將熱點快速擴散，對於維護led使用壽命的成 效上仍顯不足。另外，led封裝結構的電極也是一個高傳 0 熱率的材料’因此當LED以表面黏著技術SMKSurface201242123 VI. Description of the Invention: [Technical Fields of the Invention] _ Shuming relates to an LED package structure, and more particularly to an LED package structure having better heat dissipation performance. [Prior Art] _] The LED industry is the most affected industry in recent years. Since its development, LED products have been energy-saving, energy-saving, high-efficiency, fast response time, long life cycle, and contain no mercury. Environmental benefits and other advantages. However, under the trend of high power, brightness and (10) and degree sealing of LED, the heat dissipation problem is facing more and more severe tests. If it is not solved, it will seriously affect the life of LED. In the LED package structure, the carrier substrate of the LED chip is usually used to assist heat dissipation, for example, a ceramic substrate or a metal substrate. These heat-dissipating substrates have certain heat dissipation efficiency due to material characteristics limitation, but the LED is a point source with high heat flux density, which only relies on ceramic or metal materials to dissipate heat, and can not rapidly spread hot spots, which is effective for maintaining the service life of the LED. Still not enough. In addition, the electrode of the LED package structure is also a material with a high heat transfer rate. Therefore, when the LED is surface-bonded, the technology SMKSurface

Mount Technology)設置于電路板時，焊接的高溫可能 造成所謂爬錫問題（又稱SMT燈芯效應），而產生焊接的 缺陷。所以如何有效快速的提高LED的散熱效率，仍然是 企業需要解決的問題。 【發明内容】 [0003] 有鑒於此，有必要提供一種可加快散熱效率、避免爬錫 反應的LED封裝結構。 [0004] 一種LED封裝結構，其包括一第一散熱元件、一第二散熱 100114548 表單編號A0101 第3頁/共15頁 1002024389-0 201242123 兀件兩電極、—LED晶片以及—封H該第-散熱元 件用以設置該兩電極以及該LED晶片，並使該兩電極與該 LED晶片達成電性連接。該第二散熱元件坎置於該第」散 熱兀件内，並位於該⑽晶片的相對位置。該縣層 蓋該LED晶片。 [0005] [0006] [0007] 上述的LED封裝結構，由於該第二散熱元件位於該第—散 熱元件内，並相對於該LED晶片的位置，可直接將該第一 散熱元件所傳導的熱4迅速對外傳出，增加該⑽封裝結 構對外散熱的效率，從而可提高並維護其使用壽命。 【實施方式】 下面將結合附圖對本發明作一具體介紹。 "月參閱圖1，所示為本發明第一實施例LED封裝結構1 〇， 其包括一第一散熱元件12、一第二散熱元件14、兩電極 15、一LED晶片16以及一封裝層18。該第一散熱元件12 具有一頂面122以及相對的一底面124，該頂面122用以 設置該兩電極15以及該LED晶片16，該LED晶片16通過導 電線162與該兩電極！ 5達成電性連接。該底面124用以坎 置該第二散熱元件14，使該第二散熱元件14與該LED晶片 16相對設置。該兩電極15 一為正電極，一為負電極，分 別設置於該頂面1 2 2的兩側，並由該頂面1 2 2延伸至該第 散熱元件12的側面126。該兩電極15的電極厚度在該頂 面122的_央部位形成一凹槽120，該凹槽12〇用以設置 该LED晶片16。該凹槽120的面積大於該第二散熱元件η 的面積（如圖2中虛線所標示），該LED晶片16的面積則小 於s亥第二散熱元件14的面積。該第一散熱元件a的材料 100114548 表單編號A0101 第4頁/共15頁 1002024389-0 201242123 [0008]Mount Technology) When placed on a board, the high temperature of soldering can cause so-called solder climbing problems (also known as SMT wicking effects), which can cause soldering defects. Therefore, how to effectively and quickly improve the heat dissipation efficiency of LEDs is still a problem that enterprises need to solve. SUMMARY OF THE INVENTION [0003] In view of the above, it is necessary to provide an LED package structure that can accelerate heat dissipation efficiency and avoid creeping reaction. [0004] An LED package structure comprising a first heat dissipating component, a second heat dissipating 100114548, a form number A0101, a third page, a total of 15 pages, 1002024389-0 201242123, two electrodes, an LED chip, and a sealing H. The heat dissipating component is configured to dispose the two electrodes and the LED chip, and electrically connect the two electrodes to the LED chip. The second heat dissipating component is disposed in the first heat dissipating component and is located at a relative position of the (10) wafer. The county layer covers the LED chip. [0007] [0007] The above LED package structure, because the second heat dissipating component is located in the first heat dissipating component, and relative to the position of the LED chip, the heat transmitted by the first heat dissipating component can be directly 4 quickly spread out, increasing the efficiency of the (10) package structure for external heat dissipation, thereby improving and maintaining its service life. [Embodiment] Hereinafter, the present invention will be specifically described with reference to the accompanying drawings. 1 is a LED package structure 1 according to a first embodiment of the present invention, which includes a first heat dissipating component 12, a second heat dissipating component 14, two electrodes 15, an LED chip 16, and an encapsulation layer. 18. The first heat dissipating component 12 has a top surface 122 and an opposite bottom surface 124. The top surface 122 is used to dispose the two electrodes 15 and the LED chip 16. The LED chip 16 passes through the conductive wire 162 and the two electrodes! 5 to achieve an electrical connection. The bottom surface 124 is configured to dispose the second heat dissipating component 14 such that the second heat dissipating component 14 is disposed opposite the LED chip 16. The two electrodes 15 are a positive electrode and a negative electrode, which are respectively disposed on two sides of the top surface 12 2 and extend from the top surface 12 2 to the side surface 126 of the first heat dissipating component 12 . The electrode thickness of the two electrodes 15 forms a recess 120 at the central portion of the top surface 122 for arranging the LED wafer 16. The area of the recess 120 is larger than the area of the second heat dissipating component η (as indicated by the broken line in FIG. 2), and the area of the LED chip 16 is smaller than the area of the second heat dissipating component 14. Material of the first heat dissipating component a 100114548 Form No. A0101 Page 4 of 15 1002024389-0 201242123 [0008]

❹ [0009] 疋石夕、陶变或南導熱的絕緣材料。該第二散熱元件14的 材料是金屬或高導熱材料。該第—散熱元件12的熱傳導 速率小於該第二散熱元件14的熱傳導速率。該封裂層Η 覆蓋該LED晶片16，該封裝層18的材料是透明材質，例如 ’石夕氧樹脂（Silic〇ne)或是環氧樹脂（Ep〇xy)材料。 該封裝層18可以包含至少—種螢光粉（圖中未標示）。 上述第一實施例LED封裝結構1〇，該LED晶片16位於該第 一散熱疋件12的頂面122上，其發光運作所產生的高熱， 通過該第一散熱兀件12進行散熱。該第二散熱元件14坎 置於該第一散熱元件12内，並位於該LED晶片的相對位置 處，該LED晶片16所產生的高熱將可通過該第一散熱元件 12後，再藉由該第二散熱元件14對外散熱。該第二散熱 元件14的熱傳導速率是大於該第一散熱元件12，因此該 第一散熱元件14可以通過該第一散熱元件12加速地對該 LED晶片處產生的高熱進行散熱。相較於一般散熱元件固 定的散熱速率，本實施例LED封裝結構1〇能更快速地對該 LED晶片1 6處產生的高熱進行散熱。該第二散熱元件14的 快速散熱作用，顯然更能有效地維護該！^ΕΙ)封裝結構1〇的 使用壽命，並維持其良好的發光效能。 請再參閱圖3，是本發明第二實施例LED封裝結構的剖視 圖。該LED封裝結構20基本上與該第一實施例LED封裝結 構10相同’其包括一第一散熱元件22 ' —第二散熱元件 24、兩電極25、一LED晶片26以及一封裝層28。該第一 散熱元件22具有一頂面222以及相對的一底面224，該頂 面222用以設置該兩電極25以及該LED晶片26，該LED晶 100114548 表單編號A0101 第5頁/共15頁 1002024389-0 201242123 片26通過導電線262與該兩電極25達成電性連接。該底面 224用以坎置該第二散熱元件24，使該第二散熱元件24與 該L· E D晶片2 6相對言史置。該兩電極2 5的電極厚度在該丁頁面 222的中央部位形成一凹槽220，該凹槽220用以設置該 LED晶片26。該封裝層28覆蓋該LED晶片26。不同在於； 該兩電極25自該頂面222兩側延伸至該第一散熱元件22的 侧面226，該兩電極25的電極厚度與該底面224之間形成 凹坑29。該凹坑29在該LED封裝結構20設置于電路板時 ，該凹坑29可以提供作為焊料的容置空間，防止焊料循 者該電極2 5傳導焊接時的南溫而產生攸錫的現象。另外 ，該凹坑29的防爬錫作用，使該第二散熱元件24的面積 可以增加以提高該LED封裝結構20在設置于電路板時的對 外散熱效率。該第二散熱元件24的面積大於該凹槽220的 面積（如圖4所示），使該第二散熱元件24延伸靠近該第一 散熱元件22的側面226，增加焊接時的散熱效率，維護該 LED封裝結構20。 [0010] 最後，請再參閱圖5，是本發明第三實施例LED封裝結構 的剖視圖。該LED封裝結構30基本上與該第一實施例LED 封裝結構10相同，其包括一第一散熱元件32、一第二散 熱元件34、兩電極35、一 LED晶片36以及一封裝層38。 由於基本結構特徵相同因此不再贅述。不同在於；該第 一散熱元件32的該頂面322上具有一反射杯39設置，該反 射杯39環繞於該頂面322的周緣。該反射杯39是以模造成 型（Molding)方式成型，有助於提升該LED封裝結構30的 發光效能。該反射杯39的材料是塑膠或是高分子的材料 100114548 表單編號A0101 第6頁/共15頁 1002024389-0 201242123 ’例如，PPA(P〇lyphthalamide)塑膠或是環氧樹脂材 料。 [0011] 、’ντ、上，本發明led封裝結構的該第二散熱元件位於該第一 散熱兀件内，並位於該led晶片的相對位置上，且該第二 政’、、、元件的熱傳導速率是大於該第一散熱元件，使該led 晶片產生的高熱可藉由該第二散熱元件加速對外傳導， 從而可增加該LED封裝結構對外散熱的效率，提高其維護 使用的壽命》 〇 [酬應該指ά，上述實施㈣為本發明的較佳實施方式，本 領域技術人員還可在本發明精神内做其他變化。這些依 據本發明精神所做的變化，都應包含在本發明所要求保 護的範圍之内。 【圖式簡單說明】 [〇〇13]圖1是本發明第一實施例LED封裝結構的剖視圖》 [0014]圖2是圖1第一實施例LED封裝結構俯視圖。 Q [0015]圖3是本發明第二實施例LED封裝結構的剖視圖。 [0016] 圖4是圖3第二實施例LED封裝結構俯視圖。 [0017] 圖5是本發明第三實施例LED封裝結構的剖視圖 【主要元件符號說明】 [0018] LED封裝結構：10、20、30 [0019] 第一散熱元件：12、22、32 [0020] 凹槽：120、220 100114548 表單編號A0101 第7頁/共15頁 1002024389-0 201242123 [0021] 頂面：122、222、322 [0022] 底面：124、224 [0023] 側面：1 2 6、2 2 6 [0024] 第二散熱元件：14、24、34 [0025] f 極：15 ' 25 ' 35 [0026] LED晶片：16、26、36 [0027] 導電線：162、262 [0028] 封裝層：18、28、38 [0029] 凹坑：29 [0030] 反射杯：39 100114548 表單編號A0101 第8頁/共15頁 1002024389-0❹ [0009] Insulation material for 疋石夕, pottery or south heat conduction. The material of the second heat dissipating member 14 is a metal or a highly thermally conductive material. The heat transfer rate of the first heat dissipating member 12 is smaller than the heat transfer rate of the second heat dissipating member 14. The sealing layer 覆盖 covers the LED chip 16. The material of the encapsulating layer 18 is a transparent material, such as a material of “Silicone” or “Ep〇xy”. The encapsulation layer 18 can comprise at least one type of phosphor (not shown). In the LED package structure of the first embodiment, the LED chip 16 is located on the top surface 122 of the first heat dissipation element 12, and the high heat generated by the illumination operation is dissipated through the first heat dissipation element 12. The second heat dissipating component 14 is disposed in the first heat dissipating component 12 and located at a relative position of the LED chip. The high heat generated by the LED chip 16 can pass through the first heat dissipating component 12, and then 2. The heat dissipation rate of the second heat dissipating component 14 is greater than that of the first heat dissipating component 12, so that the first heat dissipating component 14 can accelerate the heat generated at the LED chip by the first heat dissipating component 12. Compared with the heat dissipation rate fixed by the general heat dissipating component, the LED package structure of the present embodiment can more quickly dissipate the high heat generated at the LED chip 16. The rapid heat dissipation of the second heat dissipating component 14 is obviously more effective in maintaining this! ^ΕΙ) The lifetime of the package structure is maintained and its good luminous efficacy is maintained. Referring to Figure 3, there is shown a cross-sectional view of a LED package structure in accordance with a second embodiment of the present invention. The LED package structure 20 is substantially identical to the LED package structure 10 of the first embodiment. It includes a first heat dissipating component 22' - a second heat dissipating component 24, two electrodes 25, an LED die 26, and an encapsulation layer 28. The first heat dissipating component 22 has a top surface 222 and an opposite bottom surface 224. The top surface 222 is used to set the two electrodes 25 and the LED chip 26. The LED crystal 100114548 has the form number A0101 page 5 / 15 pages 1002024389 -0 201242123 The sheet 26 is electrically connected to the two electrodes 25 via a conductive wire 262. The bottom surface 224 is used for locating the second heat dissipating component 24, so that the second heat dissipating component 24 is opposite to the L·E D wafer 26. The electrode thickness of the two electrodes 25 forms a recess 220 in the central portion of the butyl page 222, and the recess 220 is used to dispose the LED wafer 26. The encapsulation layer 28 covers the LED wafer 26. The difference is that the two electrodes 25 extend from both sides of the top surface 222 to the side surface 226 of the first heat dissipating component 22, and the electrode thickness of the two electrodes 25 forms a recess 29 with the bottom surface 224. When the LED package structure 20 is disposed on the circuit board, the recess 29 can provide an accommodating space as solder, preventing the solder from following the south temperature of the electrode 25 when the electrode 25 is soldered. In addition, the anti-climbing effect of the recess 29 allows the area of the second heat dissipating component 24 to be increased to improve the external heat dissipating efficiency of the LED package structure 20 when disposed on the circuit board. The area of the second heat dissipating component 24 is larger than the area of the recess 220 (as shown in FIG. 4 ), so that the second heat dissipating component 24 extends closer to the side surface 226 of the first heat dissipating component 22 , thereby increasing heat dissipation efficiency during soldering and maintaining The LED package structure 20. Finally, please refer to FIG. 5, which is a cross-sectional view showing the LED package structure of the third embodiment of the present invention. The LED package structure 30 is substantially identical to the LED package structure 10 of the first embodiment, and includes a first heat dissipating component 32, a second heat dissipating component 34, two electrodes 35, an LED chip 36, and an encapsulation layer 38. Since the basic structural features are the same, they will not be described again. The difference is that the top surface 322 of the first heat dissipating component 32 has a reflective cup 39 disposed around the periphery of the top surface 322. The reflector cup 39 is molded in a Molding manner to help improve the luminous efficacy of the LED package structure 30. The material of the reflector cup 39 is plastic or polymer material. 100114548 Form No. A0101 Page 6 of 15 1002024389-0 201242123 ‘For example, PPA (P〇lyphthalamide) plastic or epoxy material. [0011] The second heat dissipating component of the LED package structure of the present invention is located in the first heat dissipating component and located at a relative position of the LED chip, and the second political component, The heat conduction rate is greater than the first heat dissipating component, so that the high heat generated by the LED chip can be accelerated to the outside by the second heat dissipating component, thereby increasing the efficiency of external heat dissipation of the LED package structure and improving the service life of the LED package. It should be noted that the above-mentioned implementation (four) is a preferred embodiment of the present invention, and those skilled in the art can make other changes within the spirit of the present invention. All changes made in accordance with the spirit of the invention are intended to be included within the scope of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing an LED package structure according to a first embodiment of the present invention. [0014] FIG. 2 is a plan view showing the LED package structure of the first embodiment of FIG. Figure 3 is a cross-sectional view showing an LED package structure of a second embodiment of the present invention. 4 is a top plan view of the LED package structure of the second embodiment of FIG. 3. 5 is a cross-sectional view showing a LED package structure according to a third embodiment of the present invention. [Main component symbol description] [0018] LED package structure: 10, 20, 30 [0019] First heat dissipating component: 12, 22, 32 [0020] Groove: 120, 220 100114548 Form No. A0101 Page 7 / Total 15 Page 1002024389-0 201242123 [0021] Top surface: 122, 222, 322 [0022] Bottom surface: 124, 224 [0023] Side: 1 2 6 2 2 6 [0024] Second heat dissipating component: 14, 24, 34 [0025] f pole: 15 '25 ' 35 [0026] LED wafer: 16, 26, 36 [0027] Conductive wire: 162, 262 [0028] Encapsulation layer: 18, 28, 38 [0029] Pit: 29 [0030] Reflective cup: 39 100114548 Form number A0101 Page 8 / Total 15 pages 1002024389-0

Claims (1)

201242123 七、申請專利範圍： 1 . 一種LED封裝結構，其包括一第一散熱元件、一第二散熱 元件、兩電極、一LED晶片以及—封骏層，該第一散熱元 件用以設置該兩電極以及該LEI)晶片，並使該兩電極與該 LED晶片達成電性連接，該第二散熱元件坎置於該第一散 熱元件内，並位於該LED晶片的相對位置，該封裝層覆蓋 該LED晶片。 2 .如申請專利範圍第1項所述的LED封裝結構，其中，該第 一散熱元件’具有一頂面以及相對的一底面，該頂面用以 設置該兩電極以及該LED晶片，該底面用以坎置該第二散 熱元件。 3 .如申請專利範圍第1項所述的LED封裝結構，其中，該第 一散熱元件，材料是矽、陶瓷或高導熱的絕緣材料。 4.如申請專利範圍第1項所述的LED封裝結構，其中，該第 -散熱元件，熱傳導速率小於該第二散減件的熱傳導速 率0 Ο 5 ·如申請專利範圍第1項所述的LED封|結構’其中，該第 二散熱元件，材料是金屬或高導熱材料。 6 .如申請專利範圍第1項所述的LED封裝結構，其中，該兩 電極，一為正電極，一為負電極，由該第—散熱元件頂面 的兩側延伸至側面，該兩電極的電極厚度在該頂面的中央 部位形成一凹槽’該凹槽設置該LED晶片該LED晶片通 過導電線與該兩電極達成電性連接。 7 .如申請專利範圍第6項所述的LED封裝結構，其中，該凹 槽，面積大於該第二散熱元件的面積，該LED晶片的面積 100114548 表單編號A0101 第9頁/共15頁 1002024389-0 201242123 小於該第二散熱元件的面積。 8 .如申請專利範圍第6項所述的LED封裝結構，其中，該兩 電極的電極厚度，在該第一散熱元件的侧面與該底面之間 形成凹坑，使該第二散熱元件的面積大於該凹槽的面積。 9 .如申請專利範圍第1項所述的LED封裝結構，其中，該封 裝層，材料是透明材質，包括矽氧樹脂（Silicone)或是 環氧樹脂（Epoxy)材料。 10 .如申請專利範圍第1項所述的LED封裝結構，其中，該封 裝層，包含至少一種螢光粉。 11 .如申請專利範圍第1項所述的LED封裝結構，其中，該第 一散熱元件，具有一反射杯設置，該反射杯環繞於該第一 散熱元件的頂面周緣。 12 .如申請專利範圍第11項所述的LED封裝結構，其中，該反 射杯，是以模造成型方式成型。 13 .如申請專利範圍第11項所述的LED封裝結構，其中，該反 射杯，材料是塑膠或是高分子的材料，例如， PPA(Polyphthalamide)塑膠或是環氧樹脂材料。 100114548 表單編號A0101 第10頁/共15頁 1002024389-0201242123 VII. Patent application scope: 1. An LED package structure, comprising a first heat dissipating component, a second heat dissipating component, two electrodes, an LED chip and a sealing layer, wherein the first heat dissipating component is used to set the two An electrode and the LEI) wafer, and the two electrodes are electrically connected to the LED chip, the second heat dissipating component is disposed in the first heat dissipating component and located at a relative position of the LED chip, the encapsulation layer covers the LED chip. The LED package structure of claim 1, wherein the first heat dissipating component has a top surface and an opposite bottom surface, the top surface is configured to set the two electrodes and the LED chip, the bottom surface The second heat dissipating component is disposed. 3. The LED package structure of claim 1, wherein the first heat dissipating component is made of tantalum, ceramic or a highly thermally conductive insulating material. 4. The LED package structure according to claim 1, wherein the first heat dissipating member has a heat conduction rate smaller than a heat transfer rate of the second diffusing member 0 Ο 5 as described in claim 1 LED seal|structure' wherein the second heat dissipating component is made of metal or a highly thermally conductive material. 6. The LED package structure of claim 1, wherein the two electrodes, one being a positive electrode and one being a negative electrode, extending from both sides of the top surface of the first heat dissipating component to a side surface, the two electrodes The electrode thickness forms a groove at a central portion of the top surface. The recess provides the LED chip. The LED chip is electrically connected to the two electrodes through a conductive line. 7. The LED package structure of claim 6, wherein the recess has an area larger than an area of the second heat dissipating component, an area of the LED chip 100114548, a form number A0101, a page 9 / a total of 15 pages 1002024389- 0 201242123 is smaller than the area of the second heat dissipating component. The LED package structure of claim 6, wherein the electrode thickness of the two electrodes forms a pit between the side surface of the first heat dissipating component and the bottom surface, so that the area of the second heat dissipating component Greater than the area of the groove. 9. The LED package structure of claim 1, wherein the encapsulating layer is made of a transparent material comprising a silicone or an epoxy resin. 10. The LED package structure of claim 1, wherein the package layer comprises at least one phosphor powder. 11. The LED package structure of claim 1, wherein the first heat dissipating component has a reflective cup disposed around a top surface of the first heat dissipating component. 12. The LED package structure of claim 11, wherein the reflector cup is molded in a mold-forming manner. The LED package structure according to claim 11, wherein the reflector cup is made of a plastic or a polymer material, for example, a PPA (Polyphthalamide) plastic or an epoxy resin material. 100114548 Form No. A0101 Page 10 of 15 1002024389-0
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