CN102738352B - LED encapsulation structure - Google Patents
LED encapsulation structure Download PDFInfo
- Publication number
- CN102738352B CN102738352B CN201110091359.0A CN201110091359A CN102738352B CN 102738352 B CN102738352 B CN 102738352B CN 201110091359 A CN201110091359 A CN 201110091359A CN 102738352 B CN102738352 B CN 102738352B
- Authority
- CN
- China
- Prior art keywords
- heat dissipation
- dissipation element
- encapsulation structure
- led chip
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention provides a kind of LED encapsulation structure, it comprises first heat dissipation element, second heat dissipation element, two electrodes, a LED chip and encapsulated layers.Described first heat dissipation element in order to arrange described two electrodes and described LED chip, and makes described two electrodes and described LED chip reach electric connection.Described second heat dissipation element is embedded in described first heat dissipation element, and is positioned at the relative position of described LED chip.Described encapsulated layer, covers described LED chip.The external heat loss through conduction of heat energy that described second heat dissipation element of the present invention accelerates described LED chip by described first heat dissipation element, uses the useful life of improving LED encapsulation structure.
Description
Technical field
The present invention relates to a kind of LED encapsulation structure, particularly relate to a kind of LED encapsulation structure with better heat dissipation.
Background technology
LED industry is one of industry attracted most attention in recent years, is developed so far, and LED product has had energy-conservation, power saving, high efficiency, the reaction time is fast, the life cycle time is long and not mercurous, have the advantages such as environmental benefit.But under the utilization trend of LED high power, brightness and high-density packages, its heat dissipation problem faces more and more acid test, will have a strong impact on the life-span of LED if do not solved in good time.Usually the carrier substrate of LED chip can be used in LED encapsulation structure to assist heat radiation, such as, adopt ceramic substrate or metal substrate.These substrates with heat dissipation have certain radiating efficiency because of material behavior restriction, LED is the point-source of light of a high heat flux, only by pottery or metal material heat radiation, cannot by focus rapid diffusion, still be apparent not enough in the effect safeguarding LED useful life.In addition, the electrode of LED encapsulation structure is also the material of a high thermal conductivity, therefore when LED is arranged at circuit board with surface mount technology SMT (SurfaceMountTechnology), the high temperature of welding may cause what is called to climb tin problem (also known as SMT wick effect), and produces the defect of welding.So how to improve the radiating efficiency of LED fast and effectively, remain the problem that enterprise needs to solve.
Summary of the invention
In view of this, be necessary to provide a kind of and accelerate radiating efficiency, avoid climbing the LED encapsulation structure of tin reaction.
A kind of LED encapsulation structure, it comprises first heat dissipation element, second heat dissipation element, two electrodes, a LED chip and encapsulated layers.Described first heat dissipation element in order to arrange described two electrodes and described LED chip, and makes described two electrodes and described LED chip reach electric connection.Described second heat dissipation element is embedded in described first heat dissipation element, and is positioned at the relative position of described LED chip.Described encapsulated layer, covers described LED chip.
Above-mentioned LED encapsulation structure, because described second heat dissipation element is positioned at described first heat dissipation element, and relative to the position of described LED chip, directly the heat that described first heat dissipation element conducts externally can be spread out of rapidly, increase the efficiency that described LED encapsulation structure is externally dispelled the heat, thus improve the maintenance in its useful life.
Accompanying drawing explanation
Fig. 1 is the cutaway view of first embodiment of the invention LED encapsulation structure.
Fig. 2 is Fig. 1 first execution mode LED encapsulation structure vertical view.
Fig. 3 is the cutaway view of second embodiment of the invention LED encapsulation structure.
Fig. 4 is Fig. 3 second execution mode LED encapsulation structure vertical view.
Fig. 5 is the cutaway view of third embodiment of the invention LED encapsulation structure.
Main element symbol description
LED encapsulation structure 10,20,30
First heat dissipation element 12,22,32
Groove 120,220
End face 122,222,322
Bottom surface 124,224
Side 126,226
Second heat dissipation element 14,24,34
Electrode 15,25,35
LED chip 16,26,36
Conductor wire 162,262
Encapsulated layer 18,28,38
Pit 29
Reflector 39
Following embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Embodiment
Do one below in conjunction with accompanying drawing to the present invention specifically to introduce.
Refer to Fig. 1, be depicted as first embodiment of the invention LED encapsulation structure 10, it comprises first heat dissipation element 12, second heat dissipation element, 14, two electrodes, 15, LED chip 16 and an encapsulated layer 18.Described first heat dissipation element 12 has an end face 122 and relative bottom surface 124, described end face 122 is in order to arrange described two electrodes 15 and described LED chip 16, and described LED chip 16 reaches electric connection by conductor wire 162 and described two electrodes 15.Described bottom surface 124, in order to set described second heat dissipation element 14, makes described second heat dissipation element 14 be oppositely arranged with described LED chip 16.Described 15 1, two electrodes are positive electrode, and one is negative electrode, is arranged at the both sides of described end face 122 respectively, and extend to the side 126 of described first heat dissipation element 12 by described end face 122.The thickness of electrode of described two electrodes 15 forms a groove 120 at the central part of described end face 122, and described groove 120 is in order to arrange described LED chip 16.The area of described groove 120 be greater than described second heat dissipation element 14 area (as dotted line in Fig. 2 indicate), the area of described LED chip 16 is then less than the area of described second heat dissipation element 14.The material of described first heat dissipation element 12 is insulating material of silicon, pottery or high heat conduction.The material of described second heat dissipation element 14 is metal or highly heat-conductive material.The thermal conduction rate of described first heat dissipation element 12 is less than the thermal conduction rate of described second heat dissipation element 14.Described encapsulated layer 18 covers described LED chip 16, and the material of described encapsulated layer 18 is transparent materials, such as, and silica resin (Silicone) or epoxy resin (Epoxy) material.Described encapsulated layer 18 can comprise at least one fluorescent material (not indicating in figure).
Above-mentioned first execution mode LED encapsulation structure 10, described LED chip 16 is positioned on the end face 122 of described first heat dissipation element 12, the high heat that its luminous running produces, and is dispelled the heat by described first heat dissipation element 12.Described second heat dissipation element 14 is embedded in described first heat dissipation element 12, and be positioned at the relative position of described LED chip, the high heat that described LED chip 16 place produces by after described first heat dissipation element 12, more externally will be dispelled the heat by described second heat dissipation element 14.The thermal conduction rate of described second heat dissipation element 14 is greater than described first heat dissipation element 12, therefore described second heat dissipation element 14 can and dispelled the heat by the high heat that described first heat dissipation element 12 accelerates described LED chip place produces.Compared to the rate of heat dispation that general heat dissipation element is fixing, present embodiment LED encapsulation structure 10 can be dispelled the heat to the high heat that described LED chip 16 place produces more quickly.The quick heat radiating effect of described second heat dissipation element 14, obviously more can safeguard the useful life of described LED encapsulation structure 10 effectively, and maintains its good luminous efficacy.
Referring again to Fig. 3, it is the cutaway view of second embodiment of the invention LED encapsulation structure.Described LED encapsulation structure 20 is substantially identical with described first execution mode LED encapsulation structure 10, and it comprises first heat dissipation element 22, second heat dissipation element, 24, two electrodes, 25, LED chip 26 and an encapsulated layer 28.Described first heat dissipation element 22 has an end face 222 and relative bottom surface 224, described end face 222 is in order to arrange described two electrodes 25 and described LED chip 26, and described LED chip 26 reaches electric connection by conductor wire 262 and described two electrodes 25.Described bottom surface 224, in order to set described second heat dissipation element 24, makes described second heat dissipation element 24 be oppositely arranged with described LED chip 26.The thickness of electrode of described two electrodes 25 forms a groove 220 at the central part of described end face 222, and described groove 220 is in order to arrange described LED chip 26.Described encapsulated layer 28 covers described LED chip 26.Difference is; Described two electrodes 25 extend to the side 226 of described first heat dissipation element 22 from described end face 222 both sides, form pit 29 between the thickness of electrode of described two electrodes 25 and described bottom surface 224.Described pit 29 is when described LED encapsulation structure 20 is arranged at circuit board, and described pit 29 can be provided as the accommodation space of solder, prevent solder follow described electrode 25 conduction welding time high temperature and produce climb tin phenomenon.In addition, the tin spreading preventing effect of described pit 29, makes the area of described second heat dissipation element 24 can increase to improve the external radiating efficiency of described LED encapsulation structure 20 when being arranged at circuit board.The area of described second heat dissipation element 24 is greater than the area (as shown in Figure 4) of described groove 220, described second heat dissipation element 24 is made to extend the side 226 of close described first heat dissipation element 22, increase radiating efficiency during welding, safeguard described LED encapsulation structure 20.
Finally, referring again to Fig. 5, it is the cutaway view of third embodiment of the invention LED encapsulation structure.Described LED encapsulation structure 30 is substantially identical with described first execution mode LED encapsulation structure 10, and it comprises first heat dissipation element 32, second heat dissipation element, 34, two electrodes, 35, LED chip 36 and an encapsulated layer 38.Therefore repeat no more because basic structural feature is identical.Difference is; The described end face 322 of described first heat dissipation element 32 has a reflector 39 arrange, described reflector 39 is surrounded on the periphery of described end face 322.Described reflector 39 is shaping in mould model (Molding) mode, contributes to the luminous efficacy promoting described LED encapsulation structure 30.The material of described reflector 39 is plastics or high molecular material, such as, and PPA (Polyphthalamide) plastics or epoxide resin material.
To sum up, described second heat dissipation element of LED encapsulation structure of the present invention is positioned at described first heat dissipation element, and be positioned on the relative position of described LED chip, and the thermal conduction rate of described second heat dissipation element is greater than described first heat dissipation element, the high heat that described LED chip is produced can accelerate externally conduction by described second heat dissipation element, thus the efficiency that described LED encapsulation structure externally dispels the heat can be increased, improve it and safeguard the life-span used.
In addition, those skilled in the art also can do other change in spirit of the present invention, and certainly, these changes done according to the present invention's spirit, all should be included within the present invention's scope required for protection.
Claims (13)
1. a LED encapsulation structure, it comprises first heat dissipation element, second heat dissipation element, two electrodes, a LED chip and an encapsulated layer, described first heat dissipation element is in order to arrange described two electrodes and described LED chip and directly to contact with described electrode and LED chip, and make described two electrodes and described LED chip reach electric connection, described second heat dissipation element is embedded in described first heat dissipation element and bottom exposes to described first heat dissipation element and two electrodes, and be positioned at the relative position of described LED chip, described encapsulated layer, cover described LED chip, the end face of described second heat dissipation element and side directly with described first heat dissipation element close contact, described two electrodes extend to its side from the end face of the first heat dissipation element respectively, two electrodes are positioned at the bottom of the side of the first heat dissipation element above the first heat dissipation element bottom surface, thus make jointly to form pit between the bottom of electrode and the first heat dissipation element.
2. LED encapsulation structure as claimed in claim 1, it is characterized in that: described first heat dissipation element, described end face is in order to arrange described two electrodes and described LED chip, and described bottom surface is in order to set described second heat dissipation element.
3. LED encapsulation structure as claimed in claim 1, it is characterized in that: described first heat dissipation element, material is the insulating material of high heat conduction.
4. LED encapsulation structure as claimed in claim 1, it is characterized in that: described first heat dissipation element, thermal conduction rate is less than the thermal conduction rate of described second heat dissipation element.
5. LED encapsulation structure as claimed in claim 1, is characterized in that: described second heat dissipation element, material is highly heat-conductive material.
6. LED encapsulation structure as claimed in claim 1, it is characterized in that: described two electrodes, one is positive electrode, one is negative electrode, side is extended to by the both sides of described first heat dissipation element end face, the thickness of electrode of described two electrodes forms a groove at the central part of described end face, and described groove arranges described LED chip, and described LED chip reaches electric connection by conductor wire and described two electrodes.
7. LED encapsulation structure as claimed in claim 6, it is characterized in that: described groove, area is greater than the area of described second heat dissipation element, and the area of described LED chip is less than the area of described second heat dissipation element.
8. LED encapsulation structure as claimed in claim 6, is characterized in that: make the area of described second heat dissipation element be greater than the area of described groove.
9. LED encapsulation structure as claimed in claim 1, it is characterized in that: described encapsulated layer, material is transparent material.
10. LED encapsulation structure as claimed in claim 1, is characterized in that: described encapsulated layer, comprises at least one fluorescent material.
11. LED encapsulation structure as claimed in claim 1, is characterized in that: described first heat dissipation element, and have a reflector and arrange, described reflector is surrounded on the end face periphery of described first heat dissipation element.
12. LED encapsulation structure as claimed in claim 11, it is characterized in that: described reflector, is shaping in mould model mode.
13. LED encapsulation structure as claimed in claim 11, it is characterized in that: described reflector, material is high molecular material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110091359.0A CN102738352B (en) | 2011-04-13 | 2011-04-13 | LED encapsulation structure |
| TW100114548A TWI447974B (en) | 2011-04-13 | 2011-04-27 | Structure of the led package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110091359.0A CN102738352B (en) | 2011-04-13 | 2011-04-13 | LED encapsulation structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102738352A CN102738352A (en) | 2012-10-17 |
| CN102738352B true CN102738352B (en) | 2016-01-06 |
Family
ID=46993484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110091359.0A Expired - Fee Related CN102738352B (en) | 2011-04-13 | 2011-04-13 | LED encapsulation structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102738352B (en) |
| TW (1) | TWI447974B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545426A (en) * | 2013-10-31 | 2014-01-29 | 桂林福冈新材料有限公司 | LED support |
| CN103560198A (en) * | 2013-11-08 | 2014-02-05 | 桂林机床电器有限公司 | LED packaging structure |
| CN107994108A (en) * | 2017-12-26 | 2018-05-04 | 深圳市灏天光电有限公司 | A kind of anti-fracture stent and its production method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1612369A (en) * | 2003-10-30 | 2005-05-04 | 京瓷株式会社 | Light-emitting element reception package, light-emitting device and lighting device |
| CN101127377A (en) * | 2006-08-16 | 2008-02-20 | 晶元光电股份有限公司 | LED device and lighting chip |
| CN101252163A (en) * | 2008-03-27 | 2008-08-27 | 潮州三环（集团）股份有限公司 | SMD high power LED ceramic packaging base |
| CN101276869A (en) * | 2008-05-04 | 2008-10-01 | 潮州市三江电子有限公司 | Ceramic heat radiation substrate for sheet-shaped LED encapsulation |
| CN101814569A (en) * | 2009-02-23 | 2010-08-25 | Lg伊诺特有限公司 | Light emitting device package |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7372077B2 (en) * | 2003-02-07 | 2008-05-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
| CN101740560B (en) * | 2003-04-01 | 2012-11-21 | 夏普株式会社 | Light-emitting apparatus, backlight apparatus, and display apparatus |
| TWI231613B (en) * | 2004-03-16 | 2005-04-21 | Solidlite Corp | Package structure of enhanced power light emitting diode |
| CN1828951A (en) * | 2005-03-03 | 2006-09-06 | 宏齐科技股份有限公司 | Diode packaging structure for preventing short circuit and its making method |
| KR100631993B1 (en) * | 2005-07-20 | 2006-10-09 | 삼성전기주식회사 | Led package and fabricating method thereof |
| US20070126020A1 (en) * | 2005-12-03 | 2007-06-07 | Cheng Lin | High-power LED chip packaging structure and fabrication method thereof |
| JP5060172B2 (en) * | 2007-05-29 | 2012-10-31 | 岩谷産業株式会社 | Semiconductor light emitting device |
| TWI353096B (en) * | 2007-08-20 | 2011-11-21 | Young Optics Inc | Optoelectronic semiconductor package and method fo |
| JP4923275B2 (en) * | 2007-10-10 | 2012-04-25 | Ｎｅｃアクセステクニカ株式会社 | Through-hole structure and printed wiring board using the same |
| CN101350390B (en) * | 2008-08-21 | 2010-06-02 | 旭丽电子(广州)有限公司 | LED encapsulation structure |
| TWM386441U (en) * | 2010-03-18 | 2010-08-11 | Uei Shy Entpr Co Ltd | Integrated one-piece ceramic heat dissipation device |
-
2011
- 2011-04-13 CN CN201110091359.0A patent/CN102738352B/en not_active Expired - Fee Related
- 2011-04-27 TW TW100114548A patent/TWI447974B/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1612369A (en) * | 2003-10-30 | 2005-05-04 | 京瓷株式会社 | Light-emitting element reception package, light-emitting device and lighting device |
| CN101127377A (en) * | 2006-08-16 | 2008-02-20 | 晶元光电股份有限公司 | LED device and lighting chip |
| CN101252163A (en) * | 2008-03-27 | 2008-08-27 | 潮州三环（集团）股份有限公司 | SMD high power LED ceramic packaging base |
| CN101276869A (en) * | 2008-05-04 | 2008-10-01 | 潮州市三江电子有限公司 | Ceramic heat radiation substrate for sheet-shaped LED encapsulation |
| CN101814569A (en) * | 2009-02-23 | 2010-08-25 | Lg伊诺特有限公司 | Light emitting device package |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102738352A (en) | 2012-10-17 |
| TW201242123A (en) | 2012-10-16 |
| TWI447974B (en) | 2014-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101572285B (en) | Light-emitting device packageing and method for fabricating the same | |
| US9349930B2 (en) | LED module and lighting assembly | |
| US7939919B2 (en) | LED-packaging arrangement and light bar employing the same | |
| KR101181224B1 (en) | Led package and fabricating method of the same | |
| CN102376845A (en) | Packaging structure of light-emitting diode | |
| CN102691921A (en) | Light-emitting diode light bar and method for manufacturing same | |
| CN102194807A (en) | Light-emitting diode packaging structure and manufacturing method thereof | |
| US8907371B2 (en) | Light emitting diode package and light emitting device having the same | |
| CN102738352B (en) | LED encapsulation structure | |
| CN102593313A (en) | Package carrier and method for manufacturing the same | |
| KR100929325B1 (en) | Heat dissipation LED package | |
| TWI553791B (en) | Chip package module and package substrate | |
| CN103972372A (en) | LED encapsulation structure | |
| JP6875746B2 (en) | Die bonding substrate, high-density integrated COB white light source, and its manufacturing method | |
| CN202855803U (en) | High heat conduction LED packaging substrate | |
| CN102082217A (en) | Light-emitting diode | |
| US20160218263A1 (en) | Package structure and method for manufacturing the same | |
| CN201434352Y (en) | Light-emitting diode encapsulation structure and light bar applying same | |
| JP2010003946A (en) | Package of light emitting element, and manufacturing method of light emitting element | |
| CN203631589U (en) | Inverted LED packaging structure and LED lamp strip | |
| KR101875499B1 (en) | Metal printed circuit board enhancing radiation of heat for outdoor led lighting | |
| CN202905029U (en) | Light-emitting diode (LED) full-color display screen | |
| CN201893369U (en) | LED (Light-Emitting Diode) | |
| CN101581404B (en) | Light emitting component module | |
| TW200849641A (en) | Light source module and the method for adjusting the brightness thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160106 Termination date: 20200413 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |