CN101673790A - Light-emitting diode and manufacturing method thereof - Google Patents
Light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN101673790A CN101673790A CN 200810211944 CN200810211944A CN101673790A CN 101673790 A CN101673790 A CN 101673790A CN 200810211944 CN200810211944 CN 200810211944 CN 200810211944 A CN200810211944 A CN 200810211944A CN 101673790 A CN101673790 A CN 101673790A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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Abstract
The invention provides a light-emitting diode and a manufacturing method thereof. The manufacturing method comprises the following steps: utilizing a high temperature pressing metal and yellow light lithography technology to prepare a ceramic copper foil substrate; forming a light-emitting diode loop through a chip fixing and routing process or flip chip technology; and finally, using a package material, such as epoxide, polysiloxane resin or a silica gel, to package the light-emitting diode in transfer molding and injection molding modes. The light-emitting diode and the manufacturing methodthereof, which are provided by the invention, directly utilize a ceramic substrate pressing copper foil as a substrate and can manufacture an appropriate electrode pattern on the substrate, so that alight-emitting diode bare chip can be arranged on the ceramic substrate so as to achieve the aims of high integration level, high heat dissipation capacity and high heat dissipation homogenization.
Description
Technical field
The present invention relates to a kind of light-emitting diode and manufacture method thereof.
Background technology
With reference to shown in Figure 1; traditional light-emitting diode packaging technology; be that light-emitting diode nude film 10 is solid brilliant on a printed circuit board (PCB) (Printed Circuit Board) 20; and be connected with circuit on the printed circuit board (PCB) 20 by plain conductor 30; and on the P type electrode of nude film 10 and the N type electrode respectively with printed circuit board (PCB) 20 on two Copper Foil conductive films 40,42 be conducted, utilize at last the method for Molding to cover again and go up transparent adhesive material 50 with protection nude film 10.For example shown in the Japan Patent JP 2005085989, it proposes a kind of sandwich construction printed circuit board (PCB) that is used for light-emitting diode.This patent be with the light-emitting diode die configuration on the surface of printed circuit board (PCB), and encapsulated by transparent resin.But so encapsulation technology has that thickness can't reduce, thermal diffusivity is not good and shortcoming such as integrated level base material is low.
Traditional printed circuit board (PCB) packaged type, be one of most widely used light-emitting diode packaging technology, its advantage be the fast and manufacturing process of with low cost, speed of production easily and thickness also thinner, but, more easily be that This is what people generally disapprove of aspect heat-sinking capability, material thickness therefore because its material is mainly BT Epoxy.In addition,, utilize etching technique to produce required circuit pattern again, be coated with green lacquer at skin at last and come protection circuit, therefore following shortcoming is arranged because printed circuit board (PCB) is to use the stacked conducting plate pressing to form:
1. because printed circuit board (PCB) mainly is to be used as supporting by BT Epoxy material, so heat-sinking capability is relatively poor.
2. owing to use BT Epoxy material to be used as substrate, therefore evenly distributivity is not good for heat.
Summary of the invention
In view of the defective in the above-mentioned background of invention, in order to meet the demand of some interests on the industry, the invention provides a kind of light-emitting diode and manufacturing process thereof can be in order to solve the purpose that above-mentioned traditional light-emitting diode fails to reach.
A purpose of the present invention provides a kind of light-emitting diode and manufacture method thereof, its earlier with a Copper Foil hot pressing on a ceramic substrate, use the gold-tinted photoetching process that default electrode pattern opening is presented on the ceramic copper clad laminate again, nickel, gold or silver are plated in regular turn on the ceramic copper clad laminate to form a metal level more afterwards.Utilize again solid crystal technique (being also referred to as " chips welding technology ") or Flip Chip (being also referred to as " flip-chip technology ") with the light-emitting diode die configuration on metal level, at last again with epoxides (Epoxy), polyorganosiloxane resin or silica gel (Silicone gel), acrylic acid (Acrylic), titanium dioxide (TiO
2), silicon dioxide (SiO
2), or its composite material is with metaideophone shaping (Transfer molding) or injection molding (Injection molding) mode encapsulation LED nude film.
A kind of light-emitting diode provided by the invention comprises: a ceramic substrate, comprise two through holes, after the filling perforation of conductive paste material in order to the metallic circuit of conducting ceramic substrate levels; One metal structure, be positioned at this ceramic substrate both sides, and this metal structure of these ceramic substrate both sides has one first opening and one second opening respectively, and wherein this metal structure comprises a Copper Foil and a metal level, and this Copper Foil is between this ceramic substrate and this metal level; One nude film is positioned on this metal structure; One lead, this lead across this first opening to be linked to this nude film and metal structure respectively; And an encapsulating structure, cover this nude film.
The present invention also provides a kind of light-emitting diode, comprises: a ceramic substrate, comprise two through holes, after the filling perforation of conductive paste material in order to the metallic circuit of conducting ceramic substrate levels; One metal structure, be positioned at this ceramic substrate both sides, and this metal structure of these ceramic substrate both sides has one first opening and one second opening respectively, and wherein this metal structure comprises a Copper Foil and a metal level, and this Copper Foil is between this ceramic substrate and this metal level; One nude film, this nude film is linked to this metal structure by one first clipped wire and one second clipped wire, and this first clipped wire and this second clipped wire lay respectively at the both sides of this first opening; And an encapsulating structure, cover this nude film.
The invention provides a kind of method for manufacturing light-emitting, comprise: a ceramic substrate is provided; Form the both sides of a Copper Foil in this ceramic substrate; Form two through holes running through this ceramic substrate and this Copper Foil, wherein said two through holes after the filling perforation of conductive paste material in order to the metallic circuit of conducting ceramic substrate levels; Form one first opening and one second and be opened on this Copper Foil; Form a metal level on this Copper Foil; Adhere a nude film on this metal level; By this nude film of a wire bond and this metal level, wherein this wire bond lays respectively at the both sides of this first opening in the contact of this nude film and this metal level; And form an encapsulating structure to cover this nude film.
The present invention also provides a kind of method for manufacturing light-emitting, comprises: a ceramic substrate is provided; Form the both sides of a Copper Foil in this ceramic substrate; Form two through holes running through this ceramic substrate and this Copper Foil, wherein said two through holes after the filling perforation of conductive paste material in order to the metallic circuit of conducting ceramic substrate levels; Form one first opening and one second and be opened on this Copper Foil; Form a metal level on this Copper Foil; Weld this nude film and this metal level by one first clipped wire and one second clipped wire with Flip Chip, wherein this first clipped wire and this second clipped wire lay respectively at the both sides of this first opening; And form an encapsulating structure to cover this nude film.
Light-emitting diode provided by the invention and manufacture method thereof, directly utilize ceramic substrate pressing Copper Foil to be used as substrate, and can on substrate, produce suitable electrode pattern, make the light-emitting diode nude film can be placed on the ceramic substrate, so can reach the purpose of high integration, high heat-sinking capability and high heat radiation homogenizing.
Description of drawings
Fig. 1 is traditional light-emitting diode structure schematic diagram;
Fig. 2 A is the light-emitting diode structure schematic diagram that forms with solid crystal technique;
Fig. 2 B is the light-emitting diode structure schematic diagram that forms with Flip Chip;
Fig. 3 A is the schematic flow sheet with the light-emitting diode of solid crystal technique formation; And
Fig. 3 B is the schematic flow sheet with the light-emitting diode of Flip Chip formation.
Wherein, description of reference numerals is as follows:
10 nude films
20 printed circuit board (PCB)s
30 plain conductors
40,42 Copper Foil conductive films
50 transparent adhesive materials
110 ceramic substrates
112,114 through holes
116 conductive paste materials
120 metal structures
122 first openings
124 second openings
126 Copper Foils
128 metal levels
130 nude films
132 first clipped wires
134 second clipped wires
140 leads
150 encapsulating structures
310～392 steps
Embodiment
The present invention is a kind of light-emitting diode and manufacture method thereof in this direction of inquiring into.In order to understand the present invention up hill and dale, detailed step and composition thereof will be proposed in following description.Apparently, execution of the present invention is not defined in the known specific details of technical staff of light-emitting diode and manufacture method thereof.On the other hand, well-known composition or step are not described in the details, with the restriction of avoiding causing the present invention unnecessary.The preferred embodiments of the present invention can be described in detail as follows, yet except these were described in detail, the present invention can also be implemented among other the embodiment widely, and scope of the present invention do not limited, and it is as the criterion with the claim of enclosing.
The invention provides a kind of light-emitting diode and manufacture method thereof, it directly utilizes ceramic substrate pressing Copper Foil to be used as substrate, and can on substrate, produce suitable electrode pattern, make the light-emitting diode nude film can be placed on the ceramic substrate, so can reach the purpose of high integration, high heat-sinking capability and high heat radiation homogenizing.
Because the present invention uses ceramic substrate pressing Copper Foil to be used as substrate, and utilize general semiconductor fabrication process to produce the electrode pattern of putting nude film, its main structure is on ceramic substrate, utilize elevated temperature heat pressing technology that Copper Foil is gone up ceramic substrate to form a ceramic copper clad laminate in the hot down calcining of high temperature, utilize technology such as machine drilling technology or laser drill on ceramic copper clad laminate, to form the hole that connects again.Then in hole, insert the conductive paste material of containing metal particle, the particulate materials kind is as metallic conduction materials such as silver (Ag), gold (Au), aluminium (Al), copper (Cu), chromium (Cr), nickel (Ni) and alloys thereof in the conductive paste, but its objective is and make the ceramic copper clad laminate line layer mutual conduction of both sides up and down.The ceramic copper clad laminate of finishing filling perforation utilizes the gold-tinted photoetching process to etch default metallic circuit (opening) again, after circuit forms,, metals such as nickel, gold or silver are plated in regular turn finish the substrate manufacture flow process on the ceramic copper clad laminate again via the mode of metallide or electroless plating.
Subsequently, utilize solid crystal technique (Die bonding or common gold (Gu brilliant) technology) that the light-emitting diode nude film is adhered on the side ceramic substrate of through hole again, link electrically on nude film weld pad and ceramic base material via plain conductor.Thus, ceramic base material itself is the support base material of conducting bracket and light-emitting diode, utilize epoxides (Epoxy), acrylic acid (Acrylic), polyorganosiloxane resin or silica gel encapsulating materials such as (Silicone gel) at last again, or its composite material finishes the LED package flow process in injection molding (Injectionmolding), metaideophone (Transfer molding) mode that is shaped, and makes transparent or filling TiO 2 (TiO
2) or silicon dioxide (SiO
2) wait the protection resin of diffusant to cover whole nude film, to reach the effect of anti-aqueous vapor and protection.
The another kind of embodiment of above-mentioned nude film is for using Flip Chip on ceramic copper clad laminate, and the light-emitting diode nude film that directly overturns utilizes the tin ball to engage with weld pad on the nude film again, through after the reflow, then after the tin cream melting again curing electrically just be conducted.Utilize epoxides (Epoxy), acrylic acid (Acrylic), polyorganosiloxane resin or silica gel encapsulating materials such as (Silicone gel) at last again, or its composite material is shaped (Transfer molding) with metaideophone or injection molding (Injection molding) mode is finished LED encapsulation flow process, makes transparent or filling TiO 2 (TiO
2) or silicon dioxide (SiO
2) wait diffusant protection resin to cover whole nude film, to reach the effect of anti-aqueous vapor and protection.Its advantage is that current path is short, heat radiation is good and can have reduced the plain conductor height behind the routing.
According to above-mentioned, the present invention proposes a kind of light-emitting diode, shown in figure 2A.This light-emitting diode comprises a ceramic substrate 110, a metal structure 120, a nude film 130, a lead 140 and an encapsulating structure 150, wherein ceramic substrate 110 comprises two through holes 112,114, after filling perforation in order to the metal level 128 of conducting ceramic substrate 110 levels.Above-mentioned metal structure 120 is positioned at ceramic substrate 110 both sides, and metal structure 120 has one first opening 122 and one second opening 124, wherein first opening 122 and second opening 124 lay respectively at the both sides of ceramic substrate 110, and at the part ceramic substrate 110 of 124 of first opening 122 and second openings also between through hole 112,114.
Above-mentioned metal structure 120 comprises a Copper Foil 126 and a metal level 128, and Copper Foil 126 is between ceramic substrate 110 and metal level 128, wherein metal level 128 can be nickel (Ni), gold (Au) or silver (Ag) formed single layer structure, or be plated on sandwich construction on the Copper Foil 126 in regular turn by nickel, gold, silver, and ceramic substrate 110 can be the aluminium oxide (Al of tool high-termal conductivity
2O
3), aluminium nitride materials such as (AlN).
Above-mentioned nude film 130 is positioned on the metal structure 120, and lead 140 across first opening 122 to be linked to nude film 130 and metal structure 120 respectively.Cover nude film 130 with encapsulating structure 150 more at last.
For another example shown in Fig. 2 B, above-mentioned nude film 130 also can be by the Flip Chip nude film 130 that directly overturns, and utilize one first clipped wire 132, one second clipped wire 134 to weld with nude film 130, metal structure 120 respectively, wherein first clipped wire 132 and second clipped wire 134 lay respectively at the both sides of first opening 122.Above-mentioned first clipped wire 132 and second clipped wire 134 can be the tin ball.
Shown in figure 2A and Fig. 2 B, above-mentioned two through holes 112,114 also can be inserted the conductive paste material 116 of containing metal particle, but so that the line layer mutual conduction of both sides about the ceramic substrate, wherein above-mentioned metallic comprises one of silver (Ag), gold (Au), aluminium (Al), copper (Cu), chromium (Cr), nickel (Ni), or metallic conduction material such as its alloy.
Shown in figure 3A, the present invention also proposes a kind of method for manufacturing light-emitting.At first, as step 310, provide above-mentioned ceramic substrate 110.Subsequently, shown in step 320, form above-mentioned Copper Foil 126 in the both sides of ceramic substrate 110.Shown in the step 330, form two through holes 112,114 for another example to run through ceramic substrate 110 and Copper Foil 126.
In addition, after step 330, also can in through hole 112,114, insert the conductive paste material 116 of containing metal particle respectively, shown in step 340, wherein above-mentioned metallic comprises one of silver, gold, aluminium, copper, chromium, nickel, or the metallic conduction material of its alloy.
Afterwards, shown in step 350, form one first opening 122 and second opening 124 in Copper Foil 126, the first wherein above-mentioned opening 122 and second opening 124 lay respectively at the both sides of the ceramic substrate 110 of 112,114 of through holes.
Then, form a metal level 128 again on Copper Foil 126, wherein metal level 128 can be nickel, gold or silver-colored formed single layer structure, or is plated on sandwich construction on the Copper Foil 126 in regular turn by nickel, gold, silver, shown in step 360.According to shown in the step 370, adhesion nude film 130 is on metal level 128 again.Subsequently, shown in step 380, by lead 140 electrically connect nude films 130 and metal levels 128, wherein lead 140 is linked to the both sides that nude film 130 and the contact of metal level 128 lay respectively at first opening 122.At last, shown in step 390, form encapsulating structure 150 to cover nude film 130.
Refer again to shown in Fig. 3 B, above-mentioned nude film 130 also can directly overturn by Flip Chip, and utilizes one first clipped wire 132, one second clipped wire 134 to weld with nude film 130, metal structure 120 respectively.At first, step 310～360 are all identical with above-mentioned manufacturing process.Subsequently, shown in step 382, weld nude film 130 and metal level 128 by first clipped wire 132 and second clipped wire 134 with Flip Chip, wherein first clipped wire 132 and second clipped wire 134 lay respectively at the both sides of first opening 122.At last, form encapsulating structure 150 to cover this nude film 130, shown in step 392.
Moreover above-mentioned two through holes the 112, the 114th are formed at ceramic substrate 110 and Copper Foil 126 with machine drilling technology or laser drill technology.Above-mentioned Copper Foil 126 is to calcine on ceramic substrate 110 with elevated temperature heat pressing technomania, and metal level 128 is to be formed on the Copper Foil 126 with metallide or electroless plating mode.In addition, the first above-mentioned opening 122 and second opening 124 are to form with the gold-tinted photoetching process, and encapsulating structure 150 is to be shaped (Transfer molding) or injection molding (Injection molding) mode forms with metaideophone, and wherein above-mentioned encapsulating structure 150 comprises one of following and combination: epoxides (Epoxy), polyorganosiloxane resin or silica gel (Silicone gel), acrylic acid (Acrylic), titanium dioxide (TiO
2), silicon dioxide (SiO
2).
Apparently, according to the description among the top embodiment, the present invention has many modifications and modification.Therefore need be understood in the scope of its additional claim, except above-mentioned detailed description, the present invention can also implement in other embodiment widely.Above-mentioned is the preferred embodiments of the present invention only, is not in order to limit scope of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the described claim.
Claims (11)
1, a kind of light-emitting diode comprises:
One ceramic substrate comprises two through holes, after the filling perforation of conductive paste material in order to the metallic circuit of conducting ceramic substrate levels;
One metal structure, be positioned at this ceramic substrate both sides, and this metal structure of these ceramic substrate both sides has one first opening and one second opening respectively, and wherein this metal structure comprises a Copper Foil and a metal level, and this Copper Foil is between this ceramic substrate and this metal level;
One nude film is positioned on this metal structure;
One lead, this lead across this first opening to be linked to this nude film and metal structure respectively; And
One encapsulating structure covers this nude film.
2. light-emitting diode comprises:
One ceramic substrate comprises two through holes, after the filling perforation of conductive paste material in order to the metallic circuit of conducting ceramic substrate levels;
One metal structure, be positioned at this ceramic substrate both sides, and this metal structure of these ceramic substrate both sides has one first opening and one second opening respectively, and wherein this metal structure comprises a Copper Foil and a metal level, and this Copper Foil is between this ceramic substrate and this metal level;
One nude film, this nude film is linked to this metal structure by one first clipped wire and one second clipped wire, and this first clipped wire and this second clipped wire lay respectively at the both sides of this first opening; And
One encapsulating structure covers this nude film.
3. according to the light-emitting diode of claim 1 or 2, wherein above-mentioned ceramic substrate can be materials such as the aluminium oxide, aluminium nitride of tool high-termal conductivity, and wherein above-mentioned metal level comprises one of following and combination: nickel, gold, silver.
4. according to the light-emitting diode of claim 1 or 2, also comprise the conductive paste material that lays respectively in described two through holes, and contain metallic in this conductive paste material, and this conductive paste material comprises one of silver, gold, aluminium, copper, chromium, nickel, or the metallic conduction material of its alloy, and wherein above-mentioned encapsulating structure comprises one of following and combination: epoxides, polyorganosiloxane resin or silica gel, acrylic acid, titanium dioxide, silicon dioxide.
5. method for manufacturing light-emitting comprises:
One ceramic substrate is provided;
Form the both sides of a Copper Foil in this ceramic substrate;
Form two through holes running through this ceramic substrate and this Copper Foil, wherein said two through holes after the filling perforation of conductive paste material in order to the metallic circuit of conducting ceramic substrate levels;
Form one first opening and one second and be opened on this Copper Foil;
Form a metal level on this Copper Foil;
Adhere a nude film on this metal level;
By this nude film of a wire bond and this metal level, wherein this wire bond lays respectively at the both sides of this first opening in the contact of this nude film and this metal level; And
Form an encapsulating structure to cover this nude film.
6. method for manufacturing light-emitting comprises:
One ceramic substrate is provided;
Form the both sides of a Copper Foil in this ceramic substrate;
Form two through holes running through this ceramic substrate and this Copper Foil, wherein said two through holes after the filling perforation of conductive paste material in order to the metallic circuit of conducting ceramic substrate levels;
Form one first opening and one second and be opened on this Copper Foil;
Form a metal level on this Copper Foil;
Weld this nude film and this metal level by one first clipped wire and one second clipped wire with Flip Chip, wherein this first clipped wire and this second clipped wire lay respectively at the both sides of this first opening; And
Form an encapsulating structure to cover this nude film.
7. according to the method for manufacturing light-emitting of claim 5 or 6, two wherein above-mentioned through holes form with machine drilling technology or laser drill technology.
8. according to the method for manufacturing light-emitting of claim 5 or 6, wherein above-mentioned Copper Foil is calcined in this ceramic substrate with elevated temperature heat pressing technomania.
9. according to the method for manufacturing light-emitting of claim 7 or 8, wherein above-mentioned metal level is formed on this Copper Foil with metallide or electroless plating mode, and wherein above-mentioned metal level comprises one of following and combination: nickel, gold, silver.
10. according to the method for manufacturing light-emitting of claim 7 or 8, the first wherein above-mentioned opening and this second opening form with the gold-tinted photoetching process.
11. method for manufacturing light-emitting according to claim 7 or 8, wherein above-mentioned encapsulating structure is shaped with metaideophone or the injection molding mode forms, and this encapsulating structure comprises one of following and combination: epoxides, polyorganosiloxane resin or silica gel, acrylic acid, titanium dioxide, silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810211944 CN101673790A (en) | 2008-09-11 | 2008-09-11 | Light-emitting diode and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810211944 CN101673790A (en) | 2008-09-11 | 2008-09-11 | Light-emitting diode and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101673790A true CN101673790A (en) | 2010-03-17 |
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ID=42020887
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|---|---|---|---|
| CN 200810211944 Pending CN101673790A (en) | 2008-09-11 | 2008-09-11 | Light-emitting diode and manufacturing method thereof |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544324A (en) * | 2012-01-19 | 2012-07-04 | 日月光半导体制造股份有限公司 | Semiconductor light source module |
| CN103325916A (en) * | 2012-12-14 | 2013-09-25 | 芜湖德豪润达光电科技有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
| CN103390715A (en) * | 2013-07-16 | 2013-11-13 | 华南理工大学 | Light-emitting diode (LED) packaged with AlSiC composite substrate |
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| CN113228312A (en) * | 2018-12-27 | 2021-08-06 | 安相贞 | Semiconductor light emitting device |
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