CN102544324A - Semiconductor light source module - Google Patents
Semiconductor light source module Download PDFInfo
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- CN102544324A CN102544324A CN2012100175149A CN201210017514A CN102544324A CN 102544324 A CN102544324 A CN 102544324A CN 2012100175149 A CN2012100175149 A CN 2012100175149A CN 201210017514 A CN201210017514 A CN 201210017514A CN 102544324 A CN102544324 A CN 102544324A
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Abstract
A semiconductor light source module comprises a substrate, a light-emitting diode and a reflection structure. The substrate is provided with a first surface, a second surface and at least one penetrating hole penetrating through the first surface and the second surface. The light-emitting diode is arranged on the first surface, the reflection structure is arranged on the substrate and located around the light-emitting diode, and the reflection structure comprises a sealing compound material layer and a reflection layer. The sealing compound material layer covers partial substrate, and is filled in the penetrating hole and provided with a slanted lateral wall located on the periphery of the light-emitting diode. The reflection layer is at least arranged on the slanted lateral wall.
Description
Technical field
The invention relates to a kind of light source module, and particularly relevant for a kind of optical semiconductor source module.
Background technology
Along with development of semiconductor, various semiconductor light sources are constantly weeded out the old and bring forth the new.For instance, light-emitting diode combines to produce electroluminescent effect through electronics within it with the hole.The wavelength of the light of light-emitting diode is relevant with semi-conducting material kind and alloy that it is adopted.Light-emitting diode has long, the advantages such as cracky, switching speed height, high reliability not of efficient height, life-span, makes light-emitting diode be widely used in various electronic product.
Semiconductor light source is many a crystal grain, makes moist or receives atomic pollution for fear of semiconductor light source, and semiconductor light source will be made into many encapsulating structure through packaging technology.In the design of encapsulating structure, the researcher constantly studies various new technology and improves light utilization, increases reliability, promotes process efficiency and minification.
Summary of the invention
The present invention is relevant for a kind of optical semiconductor source module, and it utilizes the design of the through hole of the seal glue bed of material and substrate, with reliability of promoting the optical semiconductor source module and the size of dwindling the optical semiconductor source module.
According to an aspect of the present invention, a kind of optical semiconductor source module is proposed.The optical semiconductor source module comprises a substrate, a light-emitting diode and a catoptric arrangement.Substrate has a first surface, a second surface and at least one through hole.Through hole runs through first surface and second surface.Light-emitting diode is arranged on the first surface.Catoptric arrangement is arranged on the substrate, and be positioned at light-emitting diode around.Catoptric arrangement comprises a seal glue bed of material (molding compound) and a reflector.The substrate of seal glue bed of material covering part part is also inserted through hole.The seal glue bed of material has a sloped sidewall.Sloped sidewall is positioned at the periphery of light-emitting diode.The reflector is arranged on the sloped sidewall at least.
According to a further aspect in the invention, a kind of optical semiconductor source module is proposed.The optical semiconductor source module comprises a substrate, a light-emitting diode and an adhesive material.Substrate has a first surface, a second surface and at least one through hole.Through hole runs through first surface and second surface.Light-emitting diode is arranged on the first surface.The seal glue bed of material covers light-emitting diode and substrate partly and inserts through hole.
For letting the foregoing of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and conjunction with figs., elaborates as follows:
Description of drawings
Fig. 1 illustrates the sketch map of optical semiconductor source module.
Fig. 2 illustrates the sketch map of second half conductor light source module.
Fig. 3 illustrates the sketch map of second half conductor light source module.
Fig. 4 illustrates the sketch map of second half conductor light source module.
Fig. 5 illustrates the sketch map of second half conductor light source module.
Fig. 6 illustrates the sketch map of second half conductor light source module.
Fig. 7 illustrates the sketch map of second half conductor light source module.
The main element symbol description:
100,200,300,400,500,600,700: the optical semiconductor source module
110,210,310: substrate
110a, 210a, 310a, 410a, 510a, 610a: first surface
110b, 210b, 310b, 410b, 510b, 610b: second surface
110c, 210c, 310c, 410c, 510c, 610c, 710c: through hole
120,320: light-emitting diode
130: conductor structure
140: catoptric arrangement
141,241,341,441: the seal glue bed of material
141a: sloped sidewall
142,242: the reflector
B7: protuberance
C7: recess
D1: gap
M1, M6: middle
W1, W2, W4, W5, W6: width
Embodiment
Below propose embodiment and be elaborated, embodiment is only in order to as the example explanation, scope that can't limit desire protection of the present invention.In addition, the unnecessary element of graphic omission among the embodiment is with clear demonstration technical characterstic of the present invention.
Please with reference to Fig. 1, it illustrates the sketch map of optical semiconductor source module 100.Optical semiconductor source module 100 comprises a substrate 110, a light-emitting diode 120, a conductor structure 130 and a catoptric arrangement 140.Substrate 110 for example is a silicon substrate, an aluminium nitride (ALN) substrate, a ceramic substrate or a lead frame (lead frame) in order to carry light-emitting diode 120.Light-emitting diode 120 is arranged on the substrate 110; In order to emit beam, its material for example is aluminum gallium arsenide (AlGaAs), aluminum gallium phosphide (AlGaP), InGaP aluminium (AlGaInP), gallium arsenide phosphide (GaAsP), gallium phosphide (GaP), gallium nitride (GaN), indium gallium nitride (InGaN) or aluminium gallium nitride (AlGaN).Catoptric arrangement 140 be arranged at light-emitting diode 120 around, in order to the reflection light-emitting diode 120 light.In the present embodiment, catoptric arrangement 140 mainly is made up of adhesive material.
Light-emitting diode 120 is arranged on the first surface 110a of substrate 110.Two through hole 110c of Fig. 1 are positioned at the both sides of light-emitting diode 120.When a plurality of through hole 110c, a plurality of through hole 110c be surrounded on light-emitting diode 120 around.
As shown in Figure 1, because adopting, the seal glue bed of material 141 annotates film forming process, so sloped sidewall 141a can be overlapped in through hole 110c.Thus, the clearance D 1 in the reflector 142 of light-emitting diode 120 both sides can be dwindled, to improve the precision of optical semiconductor source module 100.
With regard to the relation of the seal glue bed of material 141 and through hole 110c, the seal glue bed of material 141 can fill up through hole 110c fully, perhaps only partly fills through hole 110c.In Fig. 1, the seal glue bed of material 141 fills up through hole 110c fully.The seal glue bed of material 141 is inserted the strength that combines that through hole 110c can significantly increase the seal glue bed of material 141 and substrate 110.
With regard to the shape of through hole 110c, through hole 110c can be cylindric, taper, funnel type or other shapes.In Fig. 1, through hole 110c is a funnel-form.The width W 1 of through hole 110c is increased towards first surface 110a and second surface 110b by middle M1 gradually.Because adopting, the seal glue bed of material 141 annotates film forming process, so the seal glue bed of material 141 can be inserted funnelform through hole 110c in a step.If catoptric arrangement 140 adopts materials such as silicon nitride, silica, then must adopt modes such as deposition, sputter, vapor deposition, pressing to form.Therefore, silicon nitride, silica can't be inserted funnelform through hole 110c in a step.
According to the shape of the through hole 110c of Fig. 1, conductor structure 130 can connect and the end of sealing through holes 110c in through hole 110c, and perhaps conductor structure 130 can keep a spacing and keep the perforation of through hole 110c in through hole 110c.
In addition, the kenel of through hole 110c is not limited to the mode of Fig. 1.Please with reference to Fig. 2, it illustrates the sketch map of second half conductor light source module 200.As shown in Figure 2, through hole 210c is a taper.The width W 2 of through hole 210c is dwindled towards second surface 210b by first surface 210a gradually.The seal glue bed of material 241 and the reflector 242 of catoptric arrangement 240 still can be arranged on the substrate 210 under this design, and make the seal glue bed of material 241 insert through hole 210c.
Moreover according to the shape of the through hole 210c of Fig. 2, conductor structure 230 can connect and the end of sealing through holes 210c in through hole 210c, and perhaps conductor structure 230 can keep a spacing and keep the perforation of through hole 210c in through hole 210c.
The seal glue bed of material 141,241 of above-mentioned Fig. 1 and Fig. 2 is except can be applicable to catoptric arrangement 140,240, and the seal glue bed of material 141,241 also can cover light-emitting diode 120, with protection light-emitting diode 120 and help the light scatter of light-emitting diode 120.
Please with reference to Fig. 3, it illustrates the sketch map of second half conductor light source module 300.Optical semiconductor source module 300 comprises a substrate 310, a light-emitting diode 320 and a seal glue bed of material 341.Substrate 310 has a first surface 310a, a second surface 310b and at least one through hole 310c.Through hole 310c runs through first surface 310a and second surface 310b.The section of Fig. 3 demonstrates two through hole 310c at least.In one embodiment, substrate 310 can have plural through hole 310c.
Light-emitting diode 320 is arranged on the first surface 310a of substrate 310.Two through hole 310c of Fig. 3 are positioned at the both sides of light-emitting diode 320.When a plurality of through hole 310c, a plurality of through hole 310c be surrounded on light-emitting diode 320 around.
The seal glue bed of material 341 covers light-emitting diode 320 and substrate 310 partly and inserts through hole 310c.The surface of the seal glue bed of material 341 appears circular-arc, to help the various scattered through angles of light court of light-emitting diode 320.
With regard to the relation of the seal glue bed of material 341 and through hole 310c, the seal glue bed of material 341 can fill up through hole 310c fully, and perhaps the seal glue bed of material 341 can only partly be filled through hole 310c.In Fig. 3, the seal glue bed of material 341 is partly filled through hole 310c.The seal glue bed of material 341 is inserted the strength that combines that through hole 310c can significantly increase the seal glue bed of material 341 and substrate 310.
With regard to the shape of through hole 310c, through hole 310c can be cylindric, taper, funnel type or other shapes.In Fig. 3, through hole 310c is cylindric.Through hole 310c width W 3 everywhere is equal in fact.
In addition, the kenel of through hole 310c is not limited to the mode of Fig. 3.Please with reference to Fig. 4, it illustrates the sketch map of second half conductor light source module 400.As shown in Figure 4, through hole 410c is an inverted cone shape.The width W 4 of through hole 410c is increased towards second surface 410b by first surface 410a gradually.Because adopting, the seal glue bed of material 441 annotates film forming process, so the seal glue bed of material 441 can be inserted funnelform through hole 410c in a step.
Please with reference to Fig. 5, it illustrates the sketch map of second half conductor light source module 500.As shown in Figure 5, through hole 510c is a taper.The width W 5 of through hole 510c is reduced towards second surface 510b by first surface 510a gradually.
Please with reference to Fig. 6, it illustrates the sketch map of second half conductor light source module 600.As shown in Figure 6, through hole 610c is a taper.The width W 6 of through hole 610c is increased towards first surface 610a and second surface 610b by middle M6 gradually.
Please with reference to Fig. 7, it illustrates the sketch map of second half conductor light source module 700.As shown in Figure 7, the section of the sidewall of through hole 710c is wavy.That is to say that the hole wall of through hole 710c is made up of several staggered protuberance B7 and recess C7.
Above-mentioned various embodiment inserts the design of through hole through the seal glue bed of material, makes the seal glue bed of material can significantly increase with the strength that combines of substrate, and increases production reliability.And, annotate film forming process because the seal glue bed of material adopts, so sloped sidewall can be overlapped in through hole.Thus, the gap in the reflector of light-emitting diode both sides can dwindle, and has dwindled the semiconductor light source module size.
In sum, though the present invention discloses as above with embodiment, so it is not in order to limit the present invention.Have common knowledge the knowledgeable in the technical field under the present invention, do not breaking away from the spirit and scope of the present invention, when doing various changes and retouching.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (10)
1. optical semiconductor source module comprises:
One substrate has a first surface, a second surface and at least one through hole, and this through hole runs through this first surface and this second surface;
One light-emitting diode is arranged on this first surface; And
One catoptric arrangement is arranged on this substrate, and be positioned at this light-emitting diode around, this catoptric arrangement comprises:
The one seal glue bed of material covers this substrate partly and inserts this through hole, and this seal glue bed of material has a sloped sidewall, and this sloped sidewall is positioned at the periphery of this light-emitting diode; And
One reflector is arranged on this sloped sidewall at least.
2. optical semiconductor source module as claimed in claim 1, wherein this seal glue bed of material fills up this through hole fully.
3. optical semiconductor source module as claimed in claim 1, wherein this seal glue bed of material is partly filled this through hole.
4. optical semiconductor source module as claimed in claim 1, wherein this through hole is cylindric, taper or funnel-form.
5. optical semiconductor source module as claimed in claim 1, wherein the width of this through hole is dwindled towards this second surface by this first surface gradually.
6. optical semiconductor source module as claimed in claim 1, wherein the width of this through hole is increased towards this second surface by this first surface gradually.
7. optical semiconductor source module as claimed in claim 1, wherein the width of this through hole is increased towards this first surface and this second surface by the middle of this through hole gradually.
8. optical semiconductor source module as claimed in claim 1, wherein the sidewall of this through hole is wavy.
9. optical semiconductor source module as claimed in claim 1, wherein this sloped sidewall of part is overlapped in this through hole at least.
10. optical semiconductor source module comprises:
One substrate has a first surface, a second surface and at least one through hole, and this through hole runs through this first surface and this second surface;
One light-emitting diode is arranged on this first surface; And
The one seal glue bed of material covers this light-emitting diode and this substrate partly and inserts this through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100175149A CN102544324A (en) | 2012-01-19 | 2012-01-19 | Semiconductor light source module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100175149A CN102544324A (en) | 2012-01-19 | 2012-01-19 | Semiconductor light source module |
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| CN102544324A true CN102544324A (en) | 2012-07-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100175149A Pending CN102544324A (en) | 2012-01-19 | 2012-01-19 | Semiconductor light source module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035632A (en) * | 2012-12-20 | 2013-04-10 | 日月光半导体制造股份有限公司 | Luminous encapsulation body and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05119707A (en) * | 1991-10-25 | 1993-05-18 | Takiron Co Ltd | Dot matrix light emission display body and its manufacture |
| US6392294B1 (en) * | 1998-12-22 | 2002-05-21 | Rohm Co., Ltd. | Semiconductor device with stable protection coating |
| CN101414597A (en) * | 2004-08-06 | 2009-04-22 | 联合材料公司 | Member for mounting semiconductor element, semiconductor device, and imaging equipment |
| CN101673790A (en) * | 2008-09-11 | 2010-03-17 | 先进开发光电股份有限公司 | Light-emitting diode and manufacturing method thereof |
-
2012
- 2012-01-19 CN CN2012100175149A patent/CN102544324A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05119707A (en) * | 1991-10-25 | 1993-05-18 | Takiron Co Ltd | Dot matrix light emission display body and its manufacture |
| US6392294B1 (en) * | 1998-12-22 | 2002-05-21 | Rohm Co., Ltd. | Semiconductor device with stable protection coating |
| CN101414597A (en) * | 2004-08-06 | 2009-04-22 | 联合材料公司 | Member for mounting semiconductor element, semiconductor device, and imaging equipment |
| CN101673790A (en) * | 2008-09-11 | 2010-03-17 | 先进开发光电股份有限公司 | Light-emitting diode and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035632A (en) * | 2012-12-20 | 2013-04-10 | 日月光半导体制造股份有限公司 | Luminous encapsulation body and manufacturing method thereof |
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Application publication date: 20120704 |