WO2014090156A1 - Light emitting diode packaging structure and manufacturing method thereof - Google Patents

Light emitting diode packaging structure and manufacturing method thereof Download PDF

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Publication number
WO2014090156A1
WO2014090156A1 PCT/CN2013/089068 CN2013089068W WO2014090156A1 WO 2014090156 A1 WO2014090156 A1 WO 2014090156A1 CN 2013089068 W CN2013089068 W CN 2013089068W WO 2014090156 A1 WO2014090156 A1 WO 2014090156A1
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Prior art keywords
transparent
positive
bracket
negative
led chip
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PCT/CN2013/089068
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French (fr)
Chinese (zh)
Inventor
王冬雷
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芜湖德豪润达光电科技有限公司
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Publication of WO2014090156A1 publication Critical patent/WO2014090156A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to the field of LED technology, and more particularly to an LED package structure and a method of fabricating the same.
  • LED light source is the first choice for traditional lighting that replaces high energy consumption and short life because of its high efficiency, energy saving, environmental protection and long life.
  • the chips of the existing LED light source are all packaged on a non-transparent substrate, and the most commonly used non-transparent substrate is an aluminum substrate.
  • the defect of the existing product is that a part of the light of the chip package on the non-transparent substrate is blocked by the non-transparent substrate, the light emission angle is only 180 degrees at the maximum, the light utilization rate is low, the structure is single, and the structure production cost of the aluminum substrate is adopted. It is also relatively high.
  • the CN201866576 patent discloses an LED light source, the LED light source comprises a transparent substrate, a chip, a bracket, a gold wire and a phosphor, the chip and the bracket are connected by a gold wire, the chip is encapsulated in the transparent substrate, and the transparent substrate is provided with an inner groove;
  • the phosphor is divided into an upper phosphor layer and a lower phosphor layer.
  • the upper phosphor layer is disposed above the chip, and the lower phosphor layer is disposed under the chip; the upper phosphor layer, the chip and the lower phosphor layer are encapsulated in the concave surface of the transparent substrate.
  • the transparent substrate is transparent organic glass or transparent inorganic glass, and the transparent inorganic glass is transparent crystal glass.
  • the LED light source according to the above structure has poor heat dissipation, which is disadvantageous for prolonging the life of the LED light source.
  • the first technical problem to be solved by the present invention is to provide a light emitting diode package structure with better heat dissipation and long life.
  • a second technical problem to be solved by the present invention is to provide a manufacturing method capable of fabricating a light emitting diode package structure having better heat dissipation and a long life.
  • An LED package structure comprising: a transparent substrate, an LED chip and a wire holder; the wire holder is mounted on the transparent substrate, the LED chip is fixed on the transparent substrate, and the LED chip The electrode is connected to the wire holder; the transparent substrate is a transparent glass or transparent sapphire substrate or a transparent ceramic or an organic transparent plastic.
  • the transparent substrate has a light transmittance of more than 90%.
  • the single-sided, double-sided or three-dimensional surface of the transparent substrate is uniformly plated with a transparent high thermal conductive film.
  • the transparent high thermal conductive film has a light transmittance of more than 90% and a thermal conductivity of 400 w/m ⁇ k or more.
  • the transparent high thermal conductive film is a diamond film or a diamond-like film or a diamond-like carbon film.
  • the wire holder includes a negative electrode holder and a positive electrode holder.
  • the negative electrode holder includes a negative main conductor and a plurality of negative support wires connected to the negative main conductor.
  • the positive electrode support includes a positive main conductor and a plurality of positive branch conductors connected to the main conductor.
  • the positive electrode and the negative electrode of the LED chip respectively correspond to the negative branch wire of the negative electrode bracket and the positive branch wire of the positive electrode bracket.
  • the utility model further comprises a transparent encapsulant layer fixed on the transparent substrate, the wire holder is provided with an outer negative connection point and an outer positive connection point; the transparent encapsulant layer covers the LED chip and the wire holder, and exposes the outer negative electrode of the wire holder Connection point and external positive connection point.
  • the present invention uses a transparent glass or a transparent sapphire substrate with a lower thermal conductivity as a transparent substrate, which has a good heat dissipation effect and is advantageous for prolonging the life of the LED chip, thereby facilitating the life extension of the product.
  • the invention uses a diamond film or a diamond-like film or a diamond-like carbon film as a transparent high thermal conductive film, and the transparent high thermal conductive film has good insulation property, high operating temperature and high thermal conductivity, thereby further improving the heat dissipation effect and benefiting the LED. The life of the chip and the product is extended.
  • a manufacturing method of a light emitting diode package structure comprising the steps of:
  • the transparent high thermal conductive film on one side, two sides or a three-dimensional surface on a transparent substrate, the transparent substrate being a transparent glass or a transparent sapphire substrate or a transparent ceramic or an organic transparent plastic;
  • the transparent substrate has a light transmittance of more than 90%.
  • the single-sided, double-sided or three-dimensional surface of the transparent substrate is uniformly plated with a transparent high thermal conductive film.
  • the transparent high thermal conductive film has a light transmittance of more than 90% and a thermal conductivity of 400 w/m ⁇ k or more.
  • the transparent high thermal conductive film is a diamond film or a diamond-like film or a diamond-like carbon film.
  • the wire holder includes a negative electrode holder and a positive electrode holder.
  • the negative electrode holder includes a negative main conductor and a plurality of negative support wires connected to the negative main conductor.
  • the positive electrode support includes a positive main conductor and a plurality of positive branch conductors connected to the main conductor.
  • the negative electrode and the positive electrode of the LED chip respectively correspond to the negative branch wire of the negative electrode holder and the positive branch wire of the positive electrode holder.
  • the method of the invention uses a transparent glass or transparent sapphire substrate or a transparent ceramic or an organic transparent plastic to manufacture the light emitting diode package structure, so that the light emitting diode package structure has better heat dissipation and longer life.
  • the method of the invention uses a diamond film or a diamond-like film or a diamond-like carbon film as a transparent high thermal conductive film, and the transparent high thermal conductive film has good insulation property, high operating temperature and high thermal conductivity, thereby further improving the heat dissipation effect, and is beneficial to the heat dissipation effect. The life of LED chips and this product is extended.
  • Figure 1 is a cross-sectional view of a transparent substrate
  • FIG. 2 is a cross-sectional view of a transparent substrate plated with a transparent high thermal conductive film
  • FIG. 3 is a plan view showing a wire holder provided on a transparent substrate
  • FIG. 4 is a plan view showing a lead frame and an LED chip provided on a transparent substrate
  • Figure 5 is a cross-sectional view showing a positive-mounted LED chip on a transparent substrate
  • FIG. 6 is a cross-sectional view showing a flip chip LED chip on a transparent substrate
  • FIG. 7 is a top view of a light emitting diode package structure
  • Figure 8 is a cross-sectional view along line A-A of Figure 7.
  • the present invention provides an LED package structure including a transparent substrate 1 , an LED chip 5 , and a lead frame 34 .
  • the lead frame 34 is mounted on the transparent substrate 1 , and the LED chip 5 is fixed on the LED chip 5 .
  • the electrodes of the LED chip 5 are connected to the lead frame 34;
  • the transparent substrate 1 is a transparent glass or a transparent sapphire substrate or a transparent ceramic or an organic transparent plastic.
  • the transparent substrate 1 has a light transmittance of more than 90%.
  • the single-sided, double-sided or three-dimensional surface of the transparent substrate 1 is uniformly plated with a transparent high thermal conductive film 2, and the transparent high thermal conductive film 2 requires parameters: light transmittance greater than 90%, thermal conductivity greater than or equal to 400 w/m * k ; transparent
  • the high thermal conductivity film 2 has a thickness ranging from 2 to 5 ⁇ m (including 2 ⁇ m and 5 ⁇ m) and is preferably 2 ⁇ m; generally, the transparent high thermal conductive film 2 is made of a diamond film or the like. Diamond film or diamond-like carbon film.
  • the wire holder 34 is mounted on the surface of the transparent substrate 1 on which the transparent high thermal conductive film 2 is plated.
  • the wire holder 34 includes a negative electrode holder 3 and a positive electrode holder 4, and the negative electrode holder 3 and the positive electrode holder 4 are both formed into a fork-like structure.
  • the negative electrode holder 3 includes a negative main conductor 31 and a plurality of negative branches connected to the negative main conductor 31.
  • the wire 32, the positive electrode holder 4 includes a positive main conductor 41 and a plurality of positive branch wires 42 connected to the main conductor 41; the negative electrode holder 3 and the positive electrode holder 4 are disposed on the same side of the transparent substrate 1; the negative electrode of the LED chip 5, The positive electrodes respectively correspond to the negative branch wires 32 of the negative electrode holder 3 and the positive branch wires 42 of the positive electrode holder 4.
  • the LED package structure further includes a transparent encapsulant layer 6 fixed on the transparent substrate.
  • the wire holder 34 is provided with an external negative connection point 35 and an external positive connection point 45.
  • the outer negative connection point 35 and the outer positive connection point 45 are respectively disposed on the negative main conductor 31 and the positive main conductor 41; the transparent encapsulant layer 6 covers the LED chip 5 and the wire holder 34, and exposes the outer and negative connection of the wire holder 34. Point 35 and the outer positive junction 45.
  • the above LED chips include horizontal light emitting diodes (LEDs), flip-chip light emitting diodes (FCLEDs), alternating current light emitting diodes (ACLEDs), and high voltage light emitting diodes (HVLEDs).
  • LEDs horizontal light emitting diodes
  • FCLEDs flip-chip light emitting diodes
  • ACLEDs alternating current light emitting diodes
  • HVLEDs high voltage light emitting diodes
  • the LED chip is divided into a positive-mounted LED chip and a flip-chip LED chip, and the flip-chip LED chip has a larger luminous efficiency than the positive-mounted LED chip; as shown in FIG. 7, when the LED chip adopts a formal LED chip, the LED is mounted.
  • the negative electrode and the positive electrode of the chip are respectively connected to the negative branch of the negative electrode holder through a metal wire
  • the wire, the positive branch of the positive electrode holder, and the sapphire surface of the LED chip are connected to the transparent substrate by using a transparent solid crystal glue; as shown in FIG. 8, when the LED chip uses a flip chip LED chip, the flip chip LED chip passes through the transparent electrode thereof.
  • the wire holder of the transparent substrate is connected, and the sapphire surface of the flip chip LED chip is a positive light emitting surface.
  • the manufacturing method of the above LED package structure specifically includes the following steps:
  • the transparent substrate 1 is a transparent glass or a transparent sapphire substrate or a transparent ceramic or an organic transparent plastic, and the transparent high thermal conductive film 2 Use diamond or diamond-like film or diamond-like carbon film;
  • the above-mentioned wire holder is disposed on the surface of the transparent substrate 1 on which the transparent high thermal conductive film 2 is plated
  • the LED chip 5 is fixed on the transparent substrate 1, and the electrode of the LED chip 5 is connected to the wire holder 34;
  • the LED chip 5 and the wire holder 34 are covered with a transparent encapsulant to form a transparent encapsulant layer 6, and the outer negative connection point 35 and the outer positive connection point 45 of the wire holder are exposed.
  • the process of plating a diamond film or a diamond-like film or a diamond-like carbon film on a transparent substrate (transparent glass or transparent sapphire substrate or transparent ceramic or organic transparent plastic) in the above step 1 may adopt one of the following processes: PVD magnetron sputtering A coating film process, a plasma-assisted chemical vapor deposition method, a sputtering physical vapor deposition method, a plasma-assisted chemical vapor deposition method, and of course, a diamond-like film disclosed in the application No. CN101096752, filed in the Chinese Patent Application No.
  • the layer manufacturing method comprises the following steps: (a) providing a reaction chamber and placing a substrate into the reaction chamber; (b) making the pressure of the reaction chamber lower than 10_6 torr; (c) introducing at least one carbon-containing a gas is in the reaction chamber; and (d) depositing a diamond-like film layer on the surface of the substrate by sputtering using a graphite palladium material; wherein the diamond-like film layer has a sheet-like structure, and the sheet-like structure of the diamond-like film layer Arranged on the surface of the substrate.
  • the present invention is not limited to the above embodiments, and simple replacement based on the above-described embodiments without creative labor should fall within the scope of the present invention.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

A light emitting diode packaging structure and a manufacturing method thereof. The light emitting diode packaging structure comprises a transparent substrate (1), an LED chip (5), and a wire support (34). The wire support (34) is mounted on the transparent substrate. The LED chip is fixed on the transparent substrate. An electrode of the LED chip is connected to the wire support. The transparent substrate is a transparent glass or a transparent sapphire substrate or transparent ceramic or organic transparent plastic. The transparent glass or the transparent sapphire substrate with a low heat conducting coefficient is used as the transparent substrate, so that the heat radiating effect is good, thereby helping to extend the service life of the LED chip and helping to extend the service life of the light emitting diode packaging structure.

Description

发光二极管封装结构与其制造方法  LED package structure and manufacturing method thereof
【技术领域】  [Technical Field]
本发明涉及 LED技术领域， 具体的说是一种发光二极管封装结构与其制造 方法。  The present invention relates to the field of LED technology, and more particularly to an LED package structure and a method of fabricating the same.
【背景技术】 【Background technique】
能源短缺是当今世界的热门话题， 在照明行业中， LED光源因为它的高效、 节能、 环保、 长寿命等多种优点， 是取代能耗高， 寿命短的传统照明的首选。 现有 LED光源的芯片都是封装在非透明的基板上， 最常用的非透明基板就是铝 基板。 现有产品的缺陷是芯片封装在非透明的基板上一部分光被非透明的基板 挡住， 光的发射角度最大也只有 180度， 光的利用率低， 结构单一并且采用了 铝基板的结构生产成本也比较高。  Energy shortage is a hot topic in the world today. In the lighting industry, LED light source is the first choice for traditional lighting that replaces high energy consumption and short life because of its high efficiency, energy saving, environmental protection and long life. The chips of the existing LED light source are all packaged on a non-transparent substrate, and the most commonly used non-transparent substrate is an aluminum substrate. The defect of the existing product is that a part of the light of the chip package on the non-transparent substrate is blocked by the non-transparent substrate, the light emission angle is only 180 degrees at the maximum, the light utilization rate is low, the structure is single, and the structure production cost of the aluminum substrate is adopted. It is also relatively high.
CN201866576专利公开一种 LED光源， 所述 LED光源包括透明基板、 芯片、 支架、 金线和荧光粉， 芯片与支架通过金线连接， 芯片封装在透明基板内， 透 明基板上设有内凹槽； 荧光粉分为上荧光粉层和下荧光粉层， 上荧光粉层设在 芯片上方， 下荧光粉层设在芯片下方； 上荧光粉层、 芯片和下荧光粉层封装在 透明基板的内凹槽中； 所述透明基板是透明有机玻璃或透明无机玻璃， 所述透 明无机玻璃是透明水晶玻璃。  The CN201866576 patent discloses an LED light source, the LED light source comprises a transparent substrate, a chip, a bracket, a gold wire and a phosphor, the chip and the bracket are connected by a gold wire, the chip is encapsulated in the transparent substrate, and the transparent substrate is provided with an inner groove; The phosphor is divided into an upper phosphor layer and a lower phosphor layer. The upper phosphor layer is disposed above the chip, and the lower phosphor layer is disposed under the chip; the upper phosphor layer, the chip and the lower phosphor layer are encapsulated in the concave surface of the transparent substrate. In the groove; the transparent substrate is transparent organic glass or transparent inorganic glass, and the transparent inorganic glass is transparent crystal glass.
但是由于有机玻璃或透明无机玻璃导热系数较低， 不利于 LED光源散热， 因此根据上述结构的 LED光源散热不良， 不利于 LED光源寿命延长。  However, since the thermal conductivity of the plexiglass or the transparent inorganic glass is low, it is not conducive to heat dissipation of the LED light source. Therefore, the LED light source according to the above structure has poor heat dissipation, which is disadvantageous for prolonging the life of the LED light source.
【发明内容】 [Summary of the Invention]
本发明要解决的第一个技术问题是提供一种散热较好、 寿命较长的发光二 极管封装结构。  The first technical problem to be solved by the present invention is to provide a light emitting diode package structure with better heat dissipation and long life.
本发明要解决的第二个技术问题是提供一种能制备出散热较好、 寿命较长 的发光二极管封装结构的制造方法。  A second technical problem to be solved by the present invention is to provide a manufacturing method capable of fabricating a light emitting diode package structure having better heat dissipation and a long life.
上述第一个技术问题通过以下技术方案实现： 一种发光二极管封装结构， 其特征在于， 包括透明基板、 LED芯片及导线支 架； 所述导线支架安设于所述透明基板上， 所述 LED芯片固定在所述透明基板 上， 所述 LED芯片的电极与所述导线支架连接； 所述透明基板为透明玻璃或透 明蓝宝石基板或透明陶瓷或有机透明塑料。 The first technical problem mentioned above is achieved by the following technical solutions: An LED package structure, comprising: a transparent substrate, an LED chip and a wire holder; the wire holder is mounted on the transparent substrate, the LED chip is fixed on the transparent substrate, and the LED chip The electrode is connected to the wire holder; the transparent substrate is a transparent glass or transparent sapphire substrate or a transparent ceramic or an organic transparent plastic.
所述透明基板的透光率大于 90%。  The transparent substrate has a light transmittance of more than 90%.
所述透明基板的单面、 双面或立体面均匀镀制透明高导热薄膜。  The single-sided, double-sided or three-dimensional surface of the transparent substrate is uniformly plated with a transparent high thermal conductive film.
所述透明高导热薄膜的透光率大于 90%、 导热系数大于等于 400w/m · k。 所述透明高导热薄膜采用钻石薄膜或类钻石薄膜或类钻碳薄膜。  The transparent high thermal conductive film has a light transmittance of more than 90% and a thermal conductivity of 400 w/m·k or more. The transparent high thermal conductive film is a diamond film or a diamond-like film or a diamond-like carbon film.
所述导线支架包括负极支架和正极支架， 负极支架包括一负主导线及多个 与负主导线连接的负支导线， 正极支架包括一正主导线及多个与正主导线连接 的正支导线； LED芯片的正电极、 负电极分别对应连接负极支架的负支导线、 正 极支架的正支导线。  The wire holder includes a negative electrode holder and a positive electrode holder. The negative electrode holder includes a negative main conductor and a plurality of negative support wires connected to the negative main conductor. The positive electrode support includes a positive main conductor and a plurality of positive branch conductors connected to the main conductor. The positive electrode and the negative electrode of the LED chip respectively correspond to the negative branch wire of the negative electrode bracket and the positive branch wire of the positive electrode bracket.
还包括一固定在透明基板上的透明封装胶层， 导线支架设有对外连接的外 负极连接点和外正极连接点； 透明封装胶层覆盖了 LED芯片和导线支架， 并露 出导线支架的外负极连接点和外正极连接点。  The utility model further comprises a transparent encapsulant layer fixed on the transparent substrate, the wire holder is provided with an outer negative connection point and an outer positive connection point; the transparent encapsulant layer covers the LED chip and the wire holder, and exposes the outer negative electrode of the wire holder Connection point and external positive connection point.
由上述技术方案可见， 本发明使用导热系数较低透明玻璃或透明蓝宝石基 板作为透明基板， 散热效果好， 利于 LED芯片寿命延长， 从而利于本产品的寿 命延长。 本发明使用钻石薄膜或类钻石薄膜或类钻碳薄膜作为透明高导热薄膜， 利用透明高导热薄膜具有良好的绝缘性、 较高的操作温度、 较高的热传导率， 进一步改善散热效果， 利于 LED芯片和本产品的寿命延长。  It can be seen from the above technical solution that the present invention uses a transparent glass or a transparent sapphire substrate with a lower thermal conductivity as a transparent substrate, which has a good heat dissipation effect and is advantageous for prolonging the life of the LED chip, thereby facilitating the life extension of the product. The invention uses a diamond film or a diamond-like film or a diamond-like carbon film as a transparent high thermal conductive film, and the transparent high thermal conductive film has good insulation property, high operating temperature and high thermal conductivity, thereby further improving the heat dissipation effect and benefiting the LED. The life of the chip and the product is extended.
上述第二个技术问题通过以下技术方案实现：  The above second technical problem is achieved by the following technical solutions:
一种发光二极管封装结构的制造方法， 其特征在于， 包括以下步骤： A manufacturing method of a light emitting diode package structure, comprising the steps of:
1 )、 在透明基板上的单面、 双面或立体面均匀镀制上述透明高导热薄膜， 所述透明基板为透明玻璃或透明蓝宝石基板或透明陶瓷或有机透明塑料； 1), uniformly plating the transparent high thermal conductive film on one side, two sides or a three-dimensional surface on a transparent substrate, the transparent substrate being a transparent glass or a transparent sapphire substrate or a transparent ceramic or an organic transparent plastic;
2 )、 在透明基板的镀制有透明高导热薄膜的面上， 设置导线支架；  2), providing a wire holder on a surface of the transparent substrate coated with a transparent high thermal conductive film;
3 )、 将 LED芯片固定在透明基板上， 将 LED芯片的电极与导线支架连接； 4)、 使用透明封装胶将 LED芯片和导线支架覆盖形成透明封装胶层， 露出 导线支架的外正极连接点和外负极连接点。 3) fixing the LED chip on the transparent substrate, and connecting the electrode of the LED chip to the wire holder; 4), using a transparent encapsulant to cover the LED chip and the wire holder to form a transparent encapsulant layer, exposing the outer positive connection point and the outer negative connection point of the wire holder.
所述透明基板的透光率大于 90%。  The transparent substrate has a light transmittance of more than 90%.
所述透明基板的单面、 双面或立体面均匀镀制透明高导热薄膜。  The single-sided, double-sided or three-dimensional surface of the transparent substrate is uniformly plated with a transparent high thermal conductive film.
所述透明高导热薄膜的透光率大于 90%、 导热系数大于等于 400w/m · k。 所述透明高导热薄膜采用钻石薄膜或类钻石薄膜或类钻碳薄膜。  The transparent high thermal conductive film has a light transmittance of more than 90% and a thermal conductivity of 400 w/m·k or more. The transparent high thermal conductive film is a diamond film or a diamond-like film or a diamond-like carbon film.
所述导线支架包括负极支架和正极支架， 负极支架包括一负主导线及多个 与负主导线连接的负支导线， 正极支架包括一正主导线及多个与正主导线连接 的正支导线； LED芯片的负电极、 正电极分别对应连接负极支架的负支导线、 正 极支架的正支导线。  The wire holder includes a negative electrode holder and a positive electrode holder. The negative electrode holder includes a negative main conductor and a plurality of negative support wires connected to the negative main conductor. The positive electrode support includes a positive main conductor and a plurality of positive branch conductors connected to the main conductor. The negative electrode and the positive electrode of the LED chip respectively correspond to the negative branch wire of the negative electrode holder and the positive branch wire of the positive electrode holder.
由上述技术方案可见， 本发明方法使用透明玻璃或透明蓝宝石基板或透明 陶瓷或有机透明塑料来制造发光二极管封装结构， 使得发光二极管封装结构散 热较好、 寿命较长。 本发明方法使用钻石薄膜或类钻石薄膜或类钻碳薄膜作为 透明高导热薄膜， 利用透明高导热薄膜具有良好的绝缘性、 较高的操作温度、 较高的热传导率， 进一步改善散热效果， 利于 LED芯片和本产品的寿命延长。  It can be seen from the above technical solution that the method of the invention uses a transparent glass or transparent sapphire substrate or a transparent ceramic or an organic transparent plastic to manufacture the light emitting diode package structure, so that the light emitting diode package structure has better heat dissipation and longer life. The method of the invention uses a diamond film or a diamond-like film or a diamond-like carbon film as a transparent high thermal conductive film, and the transparent high thermal conductive film has good insulation property, high operating temperature and high thermal conductivity, thereby further improving the heat dissipation effect, and is beneficial to the heat dissipation effect. The life of LED chips and this product is extended.
【附图说明】 [Description of the Drawings]
图 1为透明基板的截面图；  Figure 1 is a cross-sectional view of a transparent substrate;
图 2为镀制有透明高导热薄膜的透明基板的截面图；  2 is a cross-sectional view of a transparent substrate plated with a transparent high thermal conductive film;
图 3为在透明基板设有导线支架的俯视图；  3 is a plan view showing a wire holder provided on a transparent substrate;
图 4为在透明基板设有导线支架、 LED芯片的俯视图；  4 is a plan view showing a lead frame and an LED chip provided on a transparent substrate;
图 5为透明基板上设有正装 LED芯片的截面图；  Figure 5 is a cross-sectional view showing a positive-mounted LED chip on a transparent substrate;
图 6为透明基板上设有倒装 LED芯片的截面图；  6 is a cross-sectional view showing a flip chip LED chip on a transparent substrate;
图 7为发光二极管封装结构的俯视图；  7 is a top view of a light emitting diode package structure;
图 8为图 7沿 A-A的截面图。  Figure 8 is a cross-sectional view along line A-A of Figure 7.
【具体实施方式】 如图 1至图 6所示， 本发明提供的一种发光二极管封装结构， 其包括透明 基板 1、 LED芯片 5及导线支架 34， 导线支架 34安设于透明基板 1上， LED芯 片 5固定在透明基板上， LED芯片 5的电极与导线支架 34连接； 所述透明基板 1为透明玻璃或透明蓝宝石基板或透明陶瓷或有机透明塑料。 【detailed description】 As shown in FIG. 1 to FIG. 6 , the present invention provides an LED package structure including a transparent substrate 1 , an LED chip 5 , and a lead frame 34 . The lead frame 34 is mounted on the transparent substrate 1 , and the LED chip 5 is fixed on the LED chip 5 . On the transparent substrate, the electrodes of the LED chip 5 are connected to the lead frame 34; the transparent substrate 1 is a transparent glass or a transparent sapphire substrate or a transparent ceramic or an organic transparent plastic.
其中， 透明基板 1的透光率大于 90%。  The transparent substrate 1 has a light transmittance of more than 90%.
所述透明基板 1的单面、双面或立体面均匀镀制透明高导热薄膜 2， 透明高 导热薄膜 2要求参数为： 透光率大于 90%、 导热系数大于等于 400w/m * k; 透明 高导热薄膜 2的厚度范围为介于 2至 5 μ m之间（包括 2 μ m禾卩 5 μ m)，取值为 2 μ m 较优； 通常， 透明高导热薄膜 2采用钻石薄膜或类钻石薄膜或类钻碳薄膜。 The single-sided, double-sided or three-dimensional surface of the transparent substrate 1 is uniformly plated with a transparent high thermal conductive film 2, and the transparent high thermal conductive film 2 requires parameters: light transmittance greater than 90%, thermal conductivity greater than or equal to 400 w/m * k ; transparent The high thermal conductivity film 2 has a thickness ranging from 2 to 5 μm (including 2 μm and 5 μm) and is preferably 2 μ m; generally, the transparent high thermal conductive film 2 is made of a diamond film or the like. Diamond film or diamond-like carbon film.
通常， 导线支架 34安设于透明基板 1的镀制有透明高导热薄膜 2的面上。 导线支架 34包括负极支架 3和正极支架 4， 负极支架 3和正极支架 4均成 指叉状结构， 具体是， 负极支架 3包括一负主导线 31及多个与负主导线 31连 接的负支导线 32， 正极支架 4包括一正主导线 41及多个与正主导线 41连接的 正支导线 42 ; 负极支架 3和正极支架 4设在透明基板 1的同一面； LED芯片 5 的负电极、 正电极分别对应连接负极支架 3的负支导线 32、 正极支架 4的正支 导线 42。  Usually, the wire holder 34 is mounted on the surface of the transparent substrate 1 on which the transparent high thermal conductive film 2 is plated. The wire holder 34 includes a negative electrode holder 3 and a positive electrode holder 4, and the negative electrode holder 3 and the positive electrode holder 4 are both formed into a fork-like structure. Specifically, the negative electrode holder 3 includes a negative main conductor 31 and a plurality of negative branches connected to the negative main conductor 31. The wire 32, the positive electrode holder 4 includes a positive main conductor 41 and a plurality of positive branch wires 42 connected to the main conductor 41; the negative electrode holder 3 and the positive electrode holder 4 are disposed on the same side of the transparent substrate 1; the negative electrode of the LED chip 5, The positive electrodes respectively correspond to the negative branch wires 32 of the negative electrode holder 3 and the positive branch wires 42 of the positive electrode holder 4.
如图 7和图 8所示， 发光二极管封装结构还包括一固定在透明基板上的透 明封装胶层 6， 导线支架 34设有对外连接的外负极连接点 35和外正极连接点 45， 具体是， 外负极连接点 35和外正极连接点 45分别对应设于负主导线 31、 正主导线 41 ; 透明封装胶层 6覆盖了 LED芯片 5和导线支架 34， 并露出导线支 架 34的外负极连接点 35和外正极连接点 45。  As shown in FIG. 7 and FIG. 8 , the LED package structure further includes a transparent encapsulant layer 6 fixed on the transparent substrate. The wire holder 34 is provided with an external negative connection point 35 and an external positive connection point 45. The outer negative connection point 35 and the outer positive connection point 45 are respectively disposed on the negative main conductor 31 and the positive main conductor 41; the transparent encapsulant layer 6 covers the LED chip 5 and the wire holder 34, and exposes the outer and negative connection of the wire holder 34. Point 35 and the outer positive junction 45.
从功能特点来分， 上述 LED芯片包括水平式发光二极管 （LED)、 覆晶式发 光二极管 （FCLED)、 交流发光二极管 （ACLED)、 高压式发光二极管 （HVLED)。  In terms of functional characteristics, the above LED chips include horizontal light emitting diodes (LEDs), flip-chip light emitting diodes (FCLEDs), alternating current light emitting diodes (ACLEDs), and high voltage light emitting diodes (HVLEDs).
从封装方式来分， LED芯片分为正装 LED芯片和倒装 LED芯片， 倒装 LED芯 片具有比正装 LED芯片更大之发光效率； 如图 7所示， 当 LED芯片采用正装 LED 芯片， 正装 LED芯片的负电极、 正电极分别通过金属导线连接负极支架的负支 导线、 正极支架的正支导线， 正装 LED芯片的蓝宝石面通过用透明固晶胶连接 透明基板； 如图 8所示， 当 LED芯片采用倒装 LED芯片， 倒装 LED芯片通过其 透明的电极与透明基板的导线支架连接，倒装 LED 芯片的蓝宝石面为正向发光 面。 From the packaging method, the LED chip is divided into a positive-mounted LED chip and a flip-chip LED chip, and the flip-chip LED chip has a larger luminous efficiency than the positive-mounted LED chip; as shown in FIG. 7, when the LED chip adopts a formal LED chip, the LED is mounted. The negative electrode and the positive electrode of the chip are respectively connected to the negative branch of the negative electrode holder through a metal wire The wire, the positive branch of the positive electrode holder, and the sapphire surface of the LED chip are connected to the transparent substrate by using a transparent solid crystal glue; as shown in FIG. 8, when the LED chip uses a flip chip LED chip, the flip chip LED chip passes through the transparent electrode thereof. The wire holder of the transparent substrate is connected, and the sapphire surface of the flip chip LED chip is a positive light emitting surface.
上述发光二极管封装结构的制造方法， 具体包括以下步骤：  The manufacturing method of the above LED package structure specifically includes the following steps:
1 )、在透明基板 1上的单面、双面或立体面均匀镀制上述透明高导热薄膜 2， 透明基板 1 为透明玻璃或透明蓝宝石基板或透明陶瓷或有机透明塑料， 透明高 导热薄膜 2采用钻石薄膜或类钻石薄膜或类钻碳薄膜；  1), uniformly coating the transparent high thermal conductive film 2 on one side, double side or three-dimensional surface on the transparent substrate 1, the transparent substrate 1 is a transparent glass or a transparent sapphire substrate or a transparent ceramic or an organic transparent plastic, and the transparent high thermal conductive film 2 Use diamond or diamond-like film or diamond-like carbon film;
2 )、 在透明基板 1的镀制有透明高导热薄膜 2的面上， 设置上述导线支架 2), the above-mentioned wire holder is disposed on the surface of the transparent substrate 1 on which the transparent high thermal conductive film 2 is plated
34; 34;
3 )、 将 LED芯片 5固定在透明基板 1上， 将 LED芯片 5的电极与导线支架 34连接；  3), the LED chip 5 is fixed on the transparent substrate 1, and the electrode of the LED chip 5 is connected to the wire holder 34;
4)、使用透明封装胶将 LED芯片 5和导线支架 34覆盖形成透明封装胶层 6， 露出导线支架的外负极连接点 35和外正极连接点 45。  4) The LED chip 5 and the wire holder 34 are covered with a transparent encapsulant to form a transparent encapsulant layer 6, and the outer negative connection point 35 and the outer positive connection point 45 of the wire holder are exposed.
上述步骤 1 中在透明基板 （透明玻璃或透明蓝宝石基板或透明陶瓷或有机 透明塑料） 上镀制钻石薄膜或类钻石薄膜或类钻碳薄膜的工艺可以采用以下工 艺中一种： PVD磁控溅射镀膜工艺、 电浆辅助化学气相沉积法、溅射物理气相沉 积法、 电浆辅助化学气相沉积法； 当然， 可以参照在中国申请的、 申请号为 CN101096752的发明申请中公开的一种类钻薄膜层的制作方法， 包括以下步骤： (a) 提供一反应室， 并且将一基板置入该反应室内； （b ) 使该反应室的压力低 于 10_6torr 以下； （c ) 导入至少一含碳的气体于该反应室内； 以及 （d) 使用 一石墨钯材以溅镀沉积一类钻薄膜层于该基板表面； 其中， 该类钻薄膜层具有 片状结构， 该类钻薄膜层的片状结构排列于该基板表面。 本发明不局限于上述实施例， 基于上述实施例的、 未做出创造性劳动的简 单替换， 应当属于本发明揭露的范围。  The process of plating a diamond film or a diamond-like film or a diamond-like carbon film on a transparent substrate (transparent glass or transparent sapphire substrate or transparent ceramic or organic transparent plastic) in the above step 1 may adopt one of the following processes: PVD magnetron sputtering A coating film process, a plasma-assisted chemical vapor deposition method, a sputtering physical vapor deposition method, a plasma-assisted chemical vapor deposition method, and of course, a diamond-like film disclosed in the application No. CN101096752, filed in the Chinese Patent Application No. The layer manufacturing method comprises the following steps: (a) providing a reaction chamber and placing a substrate into the reaction chamber; (b) making the pressure of the reaction chamber lower than 10_6 torr; (c) introducing at least one carbon-containing a gas is in the reaction chamber; and (d) depositing a diamond-like film layer on the surface of the substrate by sputtering using a graphite palladium material; wherein the diamond-like film layer has a sheet-like structure, and the sheet-like structure of the diamond-like film layer Arranged on the surface of the substrate. The present invention is not limited to the above embodiments, and simple replacement based on the above-described embodiments without creative labor should fall within the scope of the present invention.

Claims

权 利 要 求 书 claims
1、 一种发光二极管封装结构， 其特征在于， 包括透明基板、 LED芯片及导 线支架； 所述导线支架安设于所述透明基板上， 所述 LED 芯片固定在所述透明 基板上， 所述 LED芯片的电极与所述导线支架连接； 所述透明基板为透明玻璃 或透明蓝宝石基板或透明陶瓷或有机透明塑料。 1. A light-emitting diode packaging structure, characterized in that it includes a transparent substrate, an LED chip and a wire bracket; the wire bracket is installed on the transparent substrate, the LED chip is fixed on the transparent substrate, the The electrodes of the LED chip are connected to the wire bracket; the transparent substrate is a transparent glass or a transparent sapphire substrate, a transparent ceramic or an organic transparent plastic.
2、 根据权利要求 1所述的发光二极管封装结构， 其特征在于， 所述透明基 板的透光率大于 90%。 2. The light-emitting diode packaging structure according to claim 1, wherein the light transmittance of the transparent substrate is greater than 90%.
3、 根据权利要求 1所述的发光二极管封装结构， 其特征在于， 所述透明基 板的单面、 双面或立体面均匀镀制透明高导热薄膜。 3. The light-emitting diode packaging structure according to claim 1, characterized in that a transparent high thermal conductive film is uniformly plated on one side, both sides or a three-dimensional side of the transparent substrate.
4、 根据权利要求 3所述的发光二极管封装结构， 其特征在于， 所述透明高 导热薄膜的透光率大于 90%、 导热系数大于等于 400w/m · k。 4. The light-emitting diode packaging structure according to claim 3, characterized in that the light transmittance of the transparent and highly thermally conductive film is greater than 90%, and the thermal conductivity is greater than or equal to 400w/m·k.
5、 根据权利要求 3所述的发光二极管封装结构， 其特征在于， 所述透明高 导热薄膜采用钻石薄膜或类钻石薄膜或类钻碳薄膜。 5. The light-emitting diode packaging structure according to claim 3, characterized in that the transparent high thermal conductivity film is a diamond film, a diamond-like film or a diamond-like carbon film.
6、 根据权利要求 1所述的发光二极管封装结构， 其特征在于， 所述导线支 架包括负极支架和正极支架， 负极支架包括一负主导线及多个与负主导线连接 的负支导线， 正极支架包括一正主导线及多个与正主导线连接的正支导线； LED 芯片的负电极、 正电极分别对应连接负极支架的负支导线、 正极支架的正支导 线。 6. The light-emitting diode packaging structure according to claim 1, wherein the wire bracket includes a negative electrode bracket and a positive electrode bracket, the negative electrode bracket includes a negative main wire and a plurality of negative branch wires connected to the negative main wire, and the positive electrode The bracket includes a positive main wire and a plurality of positive branch wires connected to the positive main wire; the negative electrode and the positive electrode of the LED chip are respectively connected to the negative branch wire of the negative bracket and the positive branch wire of the positive bracket.
7、根据权利要求 1至 6任意一项所述的发光二极管封装结构，其特征在于， 还包括一固定在透明基板上的透明封装胶层， 导线支架设有对外连接的外负极 连接点和外正极连接点； 透明封装胶层覆盖了 LED芯片和导线支架， 并露出导 线支架的外负极连接点和外正极连接点。 7. The light-emitting diode packaging structure according to any one of claims 1 to 6, further comprising a transparent packaging glue layer fixed on the transparent substrate, and the wire bracket is provided with an external negative electrode connection point and an external connection point for external connection. Positive connection point; The transparent encapsulant layer covers the LED chip and the lead bracket, and exposes the outer negative connection point and the outer positive connection point of the lead bracket.
8、 一种发光二极管封装结构的制造方法， 其特征在于， 包括以下步骤： 1 )、 在透明基板上的单面、 双面或立体面均匀镀制上述透明高导热薄膜， 权 利 要 求 书 所述透明基板为透明玻璃或透明蓝宝石基板或透明陶瓷或有机透明塑料； 8. A method for manufacturing a light-emitting diode packaging structure, which is characterized by including the following steps: 1), uniformly plating the above-mentioned transparent high thermal conductive film on one side, double side or three-dimensional side of the transparent substrate, The transparent substrate in the claims is a transparent glass or transparent sapphire substrate, transparent ceramics or organic transparent plastic;
2 )、 在透明基板的镀制有透明高导热薄膜的面上， 设置导线支架； 2). Set a wire bracket on the surface of the transparent substrate coated with a transparent high thermal conductive film;
3 )、 将 LED芯片固定在透明基板上， 将 LED芯片的电极与导线支架连接； 3). Fix the LED chip on the transparent substrate, and connect the electrodes of the LED chip to the wire bracket;
4 )、 使用透明封装胶将 LED芯片和导线支架覆盖形成透明封装胶层， 露出 导线支架的外正极连接点和外负极连接点。 4) Use transparent encapsulant to cover the LED chip and the lead bracket to form a transparent encapsulation layer, exposing the outer positive connection point and the outer negative connection point of the lead bracket.
9、 根据权利要求 8所述的发光二极管封装结构的制造方法， 其特征在于， 所述透明高导热薄膜采用钻石薄膜或类钻石薄膜或类钻碳薄膜。 9. The method for manufacturing a light-emitting diode packaging structure according to claim 8, wherein the transparent high thermal conductive film is a diamond film, a diamond-like film or a diamond-like carbon film.
10、 根据权利要求 8所述的发光二极管封装结构的制造方法， 其特征在于， 所述导线支架包括负极支架和正极支架， 负极支架包括一负主导线及多个与负 主导线连接的负支导线， 正极支架包括一正主导线及多个与正主导线连接的正 支导线； LED芯片的负电极、 正电极分别对应连接负极支架的负支导线、 正极支 架的正支导线。 10. The method of manufacturing a light-emitting diode packaging structure according to claim 8, wherein the wire bracket includes a negative electrode bracket and a positive electrode bracket, and the negative electrode bracket includes a negative main lead and a plurality of negative branches connected to the negative main lead. Wires, the positive electrode support includes a positive main lead and a plurality of positive branch wires connected to the positive main lead; the negative electrode and the positive electrode of the LED chip correspond to the negative branch wires connected to the negative support and the positive branch wires of the positive support respectively.
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