CN105070817A - White-light LED chip wafer structure enabling double-sided light emission and preparation method - Google Patents
White-light LED chip wafer structure enabling double-sided light emission and preparation method Download PDFInfo
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- CN105070817A CN105070817A CN201510571596.5A CN201510571596A CN105070817A CN 105070817 A CN105070817 A CN 105070817A CN 201510571596 A CN201510571596 A CN 201510571596A CN 105070817 A CN105070817 A CN 105070817A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 claims description 38
- 229910052594 sapphire Inorganic materials 0.000 claims description 30
- 239000010980 sapphire Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 238000007598 dipping method Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 9
- 238000004020 luminiscence type Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 47
- 238000000605 extraction Methods 0.000 description 8
- 230000004308 accommodation Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention relates to a wafer structure and a preparation method, in particular, a white-light LED chip wafer structure enabling double-sided light emission and a preparation method, and belongs to the white-light LED chip encapsulation technical field. According to the technical field of the invention, the white-light LED chip wafer comprises an LED epitaxial wafer; the front surface of the LED epitaxial wafer is plated with a front-surface ITO transparent electric conduction film; a front-surface monocrystal fluorescent sheet is bonded on the front-surface ITO transparent electric conduction film; the back surface of the LED epitaxial wafer is plated with a back-surface ITO transparent electric conduction film; a back-surface monocrystal fluorescent sheet is bonded on the back-surface ITO transparent electric conduction film; and a Ce:YAG monocrystal fluorescent sheet is adopted as the back-surface ITO monocrystal fluorescent sheet and the front-surface ITO transparent electric conduction film respectively. The wafer structure of the invention has the advantages of structural compactness and wide applicable range as well as being safe and reliable. According to the wafer structure, double-sided light emission is realized, so that a light emission area can be greatly increased, and light emission efficiency can be improved.
Description
Technical field
The present invention relates to a kind of crystal circle structure and preparation method, especially a kind of White-light LED chip crystal circle structure of two-sided bright dipping and preparation method, belong to the technical field of White-light LED chip encapsulation.
Background technology
Now, the features such as LED lamp is low with its power consumption, luminous efficiency is high, the life-span is long have started slowly occuping market.And white light LEDs is as the novel all solid state lighting source of one, caught people's attention with regard to dark since appearance.Along with the raising of LED luminous efficiency and performance, white LED lamp is also more and more applied to more field.This is to neoformation white LED lamp, is namely opportunity, is also challenge.And laser lift-off technique is exactly one of numerous solution challenge method.
Utilize laser energy to decompose the GaN resilient coating at GaN/ sapphire interface place, thus realize being separated of LED and Sapphire Substrate, this technological merit be LED transfer to high conductivity heat sink on, current expansion in large-sized wafer can be improved.N-type face is exiting surface; Light-emitting area increases, and electrode is in the light little, is convenient to prepare micro-structural, and reduces etching abrasive disc, scribing.The more important thing is that Sapphire Substrate can repeat to use.The principle of laser lift-off technique is in Sapphire Substrate by high-energy UV light, laser is not by substantially being absorbed during Sapphire Substrate, and after touching GaN layer, produce strong absorption, make regional area arrive the high temperature of 1000 DEG C instantaneously, cause the GaN layer near Sapphire Substrate gasify and make the disengaging of LED and Sapphire Substrate.
At present, the sapphire white light LED lamp of field of semiconductor illumination, be all one side bright dipping mostly, light extraction efficiency is low, is difficult to the instructions for use meeting different illumination.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of White-light LED chip crystal circle structure and preparation method of two-sided bright dipping, its compact conformation, greatly lighting area is increased by two-sided bright dipping, improve light extraction efficiency, wide accommodation, safe and reliable.
According to technical scheme provided by the invention, the White-light LED chip crystal circle structure of described two-sided bright dipping, described White-light LED chip wafer comprises LED; Front ITO transparent conductive film is coated with in the front of described LED, described front ITO transparent conductive film is bonded with front monocrystalline flourescent sheet, back side ITO transparent conductive film is coated with at the back side of described LED, described back side ITO transparent conductive film is bonded with back side monocrystalline flourescent sheet, and described back side monocrystalline flourescent sheet, front monocrystalline flourescent sheet all adopt Ce:YAG monocrystalline flourescent sheet.
Described LED comprises N-type GaN layer and is positioned at the active layer in described N-type GaN layer, and described active layer is provided with P type GaN layer; Front ITO transparent conductive film is plated in P type GaN layer, and back side ITO transparent conductive film is plated in N-type GaN layer.
Described front monocrystalline flourescent sheet is fixed on the ITO transparent conductive film of front by thermocompression bonding side, and back side monocrystalline flourescent sheet is fixed on the ITO transparent conductive film of the back side by thermocompression bonding.
Also comprise the electrode wires pole for connecting White-light LED chip wafer, described electrode wires pole connects at least three White-light LED chip wafers, one end of White-light LED chip wafer is electrically connected with electrode wires pole by wafer connecting line, and electrode wires pole is enclosed with epoxy resin.
A preparation method for the White-light LED chip wafer of two-sided bright dipping, described preparation method comprises the steps:
Step 1, provide LED luminescence chip, described LED luminescence chip comprises Sapphire Substrate and is positioned at the LED in described Sapphire Substrate, described LED adopts coating process be coated with front ITO transparent conductive film;
Step 2, on the ITO transparent conductive film of above-mentioned front thermocompression bonding have front monocrystalline flourescent sheet, described front monocrystalline flourescent sheet adopts Ce:YAG monocrystalline flourescent sheet;
Step 3, Sapphire Substrate and above-mentioned LED to be peeled off, to obtain the LED with front monocrystalline flourescent sheet;
Step 4, be coated with back side ITO transparent conductive film at the back side of above-mentioned LED;
Step 5, on the ITO transparent conductive film of the above-mentioned back side thermocompression bonding have back side monocrystalline flourescent sheet, described back side monocrystalline flourescent sheet adopts Ce:YAG monocrystalline flourescent sheet.
Described LED comprises N-type GaN layer and is positioned at the active layer in described N-type GaN layer, and described active layer is provided with P type GaN layer; Front ITO transparent conductive film is plated in P type GaN layer, and the ITO transparent conductive film method be plated in P type GaN layer in front comprises vacuum sputtering coating, reactive ion plated film, chemical vapour deposition (CVD) or evaporation plating.
In step 3, LED is peeled off by laser lift-off and Sapphire Substrate.
Advantage of the present invention: Sapphire Substrate and LED are peeled off by laser lift-off technique, after LED is separated with Sapphire Substrate, solve the limitation of Sapphire Substrate in heat-conductivity conducting, make the design flexible and diverse more of LED; Arrange front monocrystalline flourescent sheet in the front of LED, arrange back side monocrystalline flourescent sheet at the back side of LED, to form the White-light LED chip wafer of two-sided bright dipping, significantly increase lighting area, the efficiency comparing one side bright dipping is higher.Three White-light LED chip wafers are connected with electrode wires pole, and form the wick of tripod, utilize the light fixture of described wick to obtain white light LED lamp, white light LED lamp has higher emitting brightness and light extraction efficiency, and wide accommodation is safe and reliable.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing LED luminescence chip.
Fig. 2 is the structural representation of the White-light LED chip of the two-sided bright dipping of the present invention.
Fig. 3 is the structural representation of the wick utilizing White-light LED chip of the present invention to form.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 is the structural representation of the light fixture that the present invention utilizes the wick of Fig. 3 to obtain.
Description of reference numerals: 1-Sapphire Substrate, 2-N type GaN layer, 3-active layer, 4-P type GaN layer, 5-front ITO transparent conductive film, 6-front monocrystalline flourescent sheet, 7-back side ITO transparent conductive film, 8-back side monocrystalline flourescent sheet, 9-White-light LED chip wafer, 10-electrode wires pole, 11-wafer connecting line, 12-epoxy resin, 13-lamp housing and 14-electric power connection line.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in Figure 2: in order to greatly increase lighting area by two-sided bright dipping, improve light extraction efficiency, White-light LED chip wafer 9 of the present invention comprises LED; Front ITO transparent conductive film 5 is coated with in the front of described LED, described front ITO transparent conductive film 5 is bonded with front monocrystalline flourescent sheet 6, back side ITO transparent conductive film 7 is coated with at the back side of described LED, described back side ITO transparent conductive film 7 is bonded with back side monocrystalline flourescent sheet 8, and described back side monocrystalline flourescent sheet 8, front monocrystalline flourescent sheet 6 all adopt Ce:YAG monocrystalline flourescent sheet.
Particularly, front monocrystalline flourescent sheet 6 is arranged on the front of LED by front ITO transparent conductive film 5, back side monocrystalline flourescent sheet 6 is arranged on the back side of LED by back side ITO transparent conductive film 7, thus the White-light LED chip wafer 9 of two-sided bright dipping can be formed, by two-sided go out luminous energy greatly strengthen lighting area, brightness and light extraction efficiency.
Further, described LED comprises N-type GaN layer 2 and is positioned at the active layer 3 in described N-type GaN layer 2, and described active layer 3 is provided with P type GaN layer 4; Front ITO transparent conductive film 5 is plated in P type GaN layer 4, and back side ITO transparent conductive film 7 is plated in N-type GaN layer 2.
Described front monocrystalline flourescent sheet 6 is fixed on front ITO transparent conductive film 5 by thermocompression bonding side, and back side monocrystalline flourescent sheet 8 is fixed on back side ITO transparent conductive film 7 by thermocompression bonding.
In the embodiment of the present invention, the structure of LED is existing conventional version, and the preparation process of N-type GaN layer, active layer 3 and P type GaN layer 4 is all identical with common process, specifically repeats no more.
Also comprise the electrode wires pole 10 for connecting White-light LED chip wafer 9, described electrode wires pole 10 connects at least three White-light LED chip wafers 9, one end of White-light LED chip wafer 9 is electrically connected with electrode wires pole 10 by wafer connecting line 11, and electrode wires pole 10 is enclosed with epoxy resin 12.
As shown in Figure 3 and Figure 4, the wick prepared for utilizing above-mentioned White-light LED chip wafer 9 and fitting structure, wherein, electrode wires pole 10 is positioned at zone line, forms the wick of corner bracket form between White-light LED chip wafer 9 and electrode wires pole 10.The two ends of White-light LED chip wafer 9 all arrange wafer connecting line 11, and the wafer connecting line 11 of White-light LED chip wafer 9 one end is for being connected with electrode wires pole 10, and the wafer connecting line 11 of White-light LED chip wafer 9 other end is for being connected with electric power connection line.During concrete enforcement, in order to carry out wiring to White-light LED chip wafer 9, above-mentioned front ITO transparent conductive film 5, back side ITO transparent conductive film 7 can stretch out outside P type GaN layer 4, N-type GaN layer 2 respectively, the part of stretching out by front ITO transparent conductive film 5, back side ITO electrically conducting transparent module 7 as electrode, or directly makes extraction electrode on front ITO transparent conductive film 5, back side ITO transparent conductive film 7.Therefore, above-mentioned wafer connecting line 11 is electrically connected with between front ITO transparent conductive film 5, back side ITO transparent conductive film 7.
After obtaining above-mentioned wick, wick is arranged in lamp housing 13, and wick is drawn by electric power connection line 14 is connected with external power source.Owing to forming each White-light LED chip wafer 9 of wick all by the bright dipping of positive and negative two sides, therefore, light extraction efficiency and the emitting brightness of light fixture significantly can be improved.
The preparation method of the White-light LED chip wafer of the two-sided bright dipping of the present invention, described preparation method comprises the steps:
Step 1, provide LED luminescence chip, described LED luminescence chip comprises Sapphire Substrate 1 and is positioned at the LED in described Sapphire Substrate 1, described LED adopts coating process be coated with front ITO transparent conductive film 5;
In the embodiment of the present invention, the structure of the LED luminescence chip provided can be as shown in Figure 1.Wherein, described LED comprises N-type GaN layer 2 and is positioned at the active layer 3 in described N-type GaN layer 2, and described active layer 3 is provided with P type GaN layer 4; Front ITO transparent conductive film 5 is plated in P type GaN layer 4, and front ITO transparent conductive film 5 method be plated in P type GaN layer 4 comprises vacuum sputtering coating, reactive ion plated film, chemical vapour deposition (CVD) or evaporation plating.
During concrete enforcement, coating process is: with SnO
2and In
2o
3block is target, adopts direct current magnetron sputtering process to prepare ito thin film.Film-forming process condition: sputtering power is 70W, sedimentation time is 20min, and operating pressure is 0.85Pa, makes discharge gas with high-purity Ar, and high purity oxygen is as reacting gas.By so that the p-type GaN layer 4 of the LED chip of Sapphire Substrate to plate ITO transparent conductive film 5a.
Step 2, on above-mentioned front ITO transparent conductive film 5 thermocompression bonding have front monocrystalline flourescent sheet 6, described front monocrystalline flourescent sheet 6 adopts Ce:YAG monocrystalline flourescent sheet;
In the embodiment of the present invention, the front process of monocrystalline flourescent sheet 5 thermocompression bonding on front ITO transparent conductive film 5 is: bonding temperature 250 DEG C, pressure 500kg, constant temperature and pressure time 30s.The process of concrete thermocompression bonding, known by the art personnel, repeats no more herein.
Step 3, Sapphire Substrate 1 and above-mentioned LED to be peeled off, to obtain the LED with front monocrystalline flourescent sheet 6;
In the embodiment of the present invention, LED is peeled off by laser lift-off and Sapphire Substrate 1.The process of employing laser lift-off is: the stripping adopting the Sapphire Substrate of step-scan long strips scan mode laser lift-off, the length of strip laser facula 1000 microns, width 10 microns.By the concrete stripping process of Sapphire Substrate 1 and LED known by the art personnel, repeat no more herein.
Step 4, be coated with back side ITO transparent conductive film 7 at the back side of above-mentioned LED;
In the embodiment of the present invention, back side ITO transparent conductive film 7 is plated in N-type GaN layer 2, and concrete coating process with reference to the process of front ITO transparent conductive film 6, specifically can repeat no more.
Step 5, on above-mentioned back side ITO transparent conductive film 7 thermocompression bonding have back side monocrystalline flourescent sheet 8, described back side monocrystalline flourescent sheet 8 adopts Ce:YAG monocrystalline flourescent sheet.
In the embodiment of the present invention, the process of back side monocrystalline flourescent sheet 8 thermocompression bonding ITO transparent conductive film 7 overleaf, identical with the front process of monocrystalline flourescent sheet 6 thermocompression bonding on front ITO transparent conductive film 7, specifically repeat no more.
In the embodiment of the present invention, front monocrystalline flourescent sheet 6, back side monocrystalline flourescent sheet 8 all adopt Ce:YAG monocrystalline flourescent sheet, and described Ce:YAG monocrystalline flourescent sheet has stable physical and chemical performance, Ce under high temperature below 300 DEG C
3+ion is valence stability in YAG single crystal substrate, about the emission spectrum of Ce:YAG monocrystalline flourescent sheet is centrally located at 530 ~ 550nm wave band, can have good coupling with the blue luminous energy of LED, forms white light.
Sapphire Substrate 1 and LED are peeled off by laser lift-off technique by the present invention, after LED is separated with Sapphire Substrate 1, solve the limitation of Sapphire Substrate 1 in heat-conductivity conducting, make the design flexible and diverse more of LED; Arrange front monocrystalline flourescent sheet 6 in the front of LED, arrange back side monocrystalline flourescent sheet 8 at the back side of LED, to form the White-light LED chip wafer 9 of two-sided bright dipping, significantly increase lighting area, the efficiency comparing one side bright dipping is higher.Three White-light LED chip wafers 9 are connected with electrode wires pole 10, and form the wick of tripod, utilize the light fixture of described wick to obtain white light LED lamp, white light LED lamp has higher emitting brightness and light extraction efficiency, and wide accommodation is safe and reliable.
Claims (7)
1. a White-light LED chip crystal circle structure for two-sided bright dipping, described White-light LED chip wafer (9) comprises LED; It is characterized in that: be coated with front ITO transparent conductive film (5) in the front of described LED, described front ITO transparent conductive film (5) is bonded with front monocrystalline flourescent sheet (6), back side ITO transparent conductive film (7) is coated with at the back side of described LED, described back side ITO transparent conductive film (7) is bonded with back side monocrystalline flourescent sheet (8), and described back side monocrystalline flourescent sheet (8), front monocrystalline flourescent sheet (6) all adopt Ce:YAG monocrystalline flourescent sheet.
2. the White-light LED chip crystal circle structure of two-sided bright dipping according to claim 1, it is characterized in that: described LED comprises N-type GaN layer (2) and is positioned at the active layer (3) on described N-type GaN layer (2), and described active layer (3) is provided with P type GaN layer (4); Front ITO transparent conductive film (5) is plated in P type GaN layer (4), and back side ITO transparent conductive film (7) is plated in N-type GaN layer (2).
3. the White-light LED chip crystal circle structure of two-sided bright dipping according to claim 1 and 2, it is characterized in that: described front monocrystalline flourescent sheet (6) is fixed on front ITO transparent conductive film (5) by thermocompression bonding side, and back side monocrystalline flourescent sheet (8) is fixed on back side ITO transparent conductive film (7) by thermocompression bonding.
4. the White-light LED chip crystal circle structure of two-sided bright dipping according to claim 1, it is characterized in that: also comprise the electrode wires pole (10) for connecting White-light LED chip wafer (9), described electrode wires pole (10) is upper connects at least three White-light LED chip wafers (9), one end of White-light LED chip wafer (9) is electrically connected with electrode wires pole (10) by wafer connecting line (11), and electrode wires pole (10) is enclosed with epoxy resin (12).
5. a preparation method for the White-light LED chip wafer of two-sided bright dipping, is characterized in that, described preparation method comprises the steps:
Step 1, provide LED luminescence chip, the LED that described LED luminescence chip comprises Sapphire Substrate (1) and is positioned in described Sapphire Substrate (1), described LED adopts coating process be coated with front ITO transparent conductive film (5);
Step 2, have front monocrystalline flourescent sheet (6) in the upper thermocompression bonding of above-mentioned front ITO transparent conductive film (5), described front monocrystalline flourescent sheet (6) adopts Ce:YAG monocrystalline flourescent sheet;
Step 3, Sapphire Substrate (1) and above-mentioned LED to be peeled off, to obtain the LED with front monocrystalline flourescent sheet (6);
Step 4, be coated with back side ITO transparent conductive film (7) at the back side of above-mentioned LED;
Step 5, have back side monocrystalline flourescent sheet (8) in the upper thermocompression bonding of above-mentioned back side ITO transparent conductive film (7), described back side monocrystalline flourescent sheet (8) adopts Ce:YAG monocrystalline flourescent sheet.
6. the preparation method of the White-light LED chip wafer of two-sided bright dipping according to claim 5, it is characterized in that: described LED comprises N-type GaN layer (2) and is positioned at the active layer (3) on described N-type GaN layer (2), and described active layer (3) is provided with P type GaN layer (4); Front ITO transparent conductive film (5) is plated in P type GaN layer (4), and front ITO transparent conductive film (5) method be plated in P type GaN layer (4) comprises vacuum sputtering coating, reactive ion plated film, chemical vapour deposition (CVD) or evaporation plating.
7. the preparation method of the White-light LED chip wafer of two-sided bright dipping according to claim 5, is characterized in that: in step 3, and LED is peeled off by laser lift-off and Sapphire Substrate (1).
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| CN201510571596.5A CN105070817A (en) | 2015-09-09 | 2015-09-09 | White-light LED chip wafer structure enabling double-sided light emission and preparation method |
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| CN109860347A (en) * | 2019-02-02 | 2019-06-07 | 扬州乾照光电有限公司 | A kind of LED oxide bond structure and production method |
| CN110034212A (en) * | 2019-04-26 | 2019-07-19 | 中国科学院长春光学精密机械与物理研究所 | The preparation method and transfer method of vertical structure bar shaped Micro-LED |
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| CN110034212A (en) * | 2019-04-26 | 2019-07-19 | 中国科学院长春光学精密机械与物理研究所 | The preparation method and transfer method of vertical structure bar shaped Micro-LED |
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Application publication date: 20151118 |