CN102569573B - Improve heat conducting LED chip - Google Patents
Improve heat conducting LED chip Download PDFInfo
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- CN102569573B CN102569573B CN201210045092.6A CN201210045092A CN102569573B CN 102569573 B CN102569573 B CN 102569573B CN 201210045092 A CN201210045092 A CN 201210045092A CN 102569573 B CN102569573 B CN 102569573B
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Abstract
The present invention relates to the heat conducting LED chip of a kind of improvement, belong to the technical field of LED chip.According to technical scheme provided by the invention, the heat conducting LED chip of described improvement, comprises LED chip body, and described LED chip body comprises substrate and is positioned at P electrode and the N electrode of described types of flexure; Described substrate correspondence arranges P electrode and N electrode opposite side surface is coated with reflector, and described reflector is provided with bonded layer; Substrate is connected with heat-conducting substrate bonding by bonded layer.LED chip body of the present invention comprises substrate, and on substrate, evaporation has reflector, and on reflector, evaporation has bonded layer, and substrate is linked into an integrated entity by bonded layer and heat-conducting substrate; The heat produced during LED chip body work conducts in time efficiently by heat-conducting substrate, reduces the thermal resistance of LED chip self, improves reliability and the life-span of LED chip; Simultaneously after substrate thinning, absorption when light transmits in substrate can be reduced, improve the light extraction efficiency of LED chip.
Description
Technical field
The present invention relates to a kind of LED chip structure, especially the heat conducting LED chip of a kind of improvement, belongs to the technical field of LED chip.
Background technology
LED(LightingEmittingDiode) i.e. light-emitting diode is a kind of semiconducting solid luminescent device.Current energy-conserving and environment-protective are global major issues, and low-carbon (LC) life is rooted in the hearts of the people gradually.At lighting field, the application of power LED luminous product is just attract the sight of common people, and 21st century is novel illumination light source epoch of representative by entering with LED.LED has energy-saving and environmental protection, life-span length, sound construction, and the features such as the response time is fast, can be widely used in the fields such as various general lighting, backlight, display, instruction and urban landscape.
The power conversion of the luminous efficiency about 32%, 68% of power type LED chip is heat energy, and the problem of heat radiation is the key factor of its lighting field of restriction application, and when chip temperature raises, luminous intensity can decline, and reliability and life-span also can and then decline.Heat radiation has 3 kinds of modes substantially, and one is conduction-type heat radiation, and two is convection type heat radiations, and three is radial-type heat dissipatings.Dispel the heat topmost problem points just at area, and heat loss through radiation amount is very little, so most importantly radiating mode is conduction and convection two aspect.
Heat pattern ohm law Δ T=QR, i.e. temperature difference T=hot-fluid Qx thermal resistance R; Thermal resistance is larger, just has larger heat to produce in components and parts.Heat trnasfer has vertical and horizontal direction, and vertical direction is series system, and more thermal resistances of connecting are larger, and thickness relative requirement is thinner.Horizontal direction is and connects mode, and it is more to connect thermal resistance number, and thermal conduction effect is better.
The best technology of current solution LED chip heat transfer is the rectilinear LED that sapphire removes, and removes the LED after sapphire and is posted on the splendid silicon of heat conduction or metal substrate, greatly reduce the thermal resistance of chip.But it is loaded down with trivial details that rectilinear LED compares conventional flat formula LED technique, equipment and raw and auxiliary material higher.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of and improve heat conducting LED chip, it is simple and compact for structure, reduces the thermal resistance of LED chip self, improves reliability and the life-span of LED chip.
According to technical scheme provided by the invention, the heat conducting LED chip of described improvement, comprises LED chip body, and described LED chip body comprises substrate and is positioned at P electrode and the N electrode of described types of flexure; Described substrate correspondence arranges P electrode and N electrode opposite side surface is coated with reflector, and described reflector is provided with bonded layer; Substrate is connected with heat-conducting substrate bonding by bonded layer.
Described heat-conducting substrate is one or more of material in molybdenum, aluminium, nickel, copper, copper tungsten, aluminium nitride.Described reflector is one or more in metal level, alloy-layer, DBR total reflection film.
The thickness of described substrate is 10 ~ 50 μm.Described substrate is sapphire substrate.
Described substrate is provided with extension luminescent layer, and described extension luminescent layer comprises the n type gallium nitride layer be positioned on substrate, is positioned at the quantum well on n type gallium nitride layer and is positioned at the P type gallium nitride layer in described quantum well; P electrode is electrically connected with P type gallium nitride layer, and N electrode is electrically connected with n type gallium nitride layer.
The material of described bonded layer comprises gold or tin.The material of described metal level comprises silver or aluminium.
Advantage of the present invention: LED chip body comprises substrate, on substrate, evaporation has reflector, and on reflector, evaporation has bonded layer, and substrate is linked into an integrated entity by bonded layer and heat-conducting substrate; The heat produced during LED chip body work conducts in time efficiently by heat-conducting substrate, reduces the thermal resistance of LED chip self, improves reliability and the life-span of LED chip; Simultaneously after substrate thinning, absorption when light transmits in substrate can be reduced, improve the light extraction efficiency of LED chip.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 ~ Fig. 4 is the concrete technology step cutaway view of shape present inventive construction, wherein:
Fig. 2 is the cutaway view after substrate being arranged middle transglutaminase substrate.
Fig. 3 is the cutaway view after substrate and heat-conducting substrate bonding.
Fig. 4 removes the cutaway view in Fig. 3 after transglutaminase substrate.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in Fig. 1 ~ Fig. 4: the present invention includes heat-conducting substrate 1, bonded layer 2, reflector 3, substrate 4, extension luminescent layer 5, N electrode 6, P electrode 7, protective layer 8, transfer bonded layer 9, middle transglutaminase substrate 10 and LED chip body 11.
As shown in Figure 1: in order to reduce the thermal resistance of LED chip itself, improve reliability and the life-span of LED chip, the present invention includes LED chip body 11, described LED chip body 11 comprises substrate 4, and the top of described substrate 4 is provided with P electrode 7 and N electrode 6; Substrate 4 correspondence arranges N electrode 6 and is coated with reflector 3 with the surface of P electrode 7 opposite side, and described reflector 3 is provided with bonded layer 2, and substrate 4 is linked into an integrated entity by bonded layer 2 and heat-conducting substrate 1 bonding.Heat-conducting substrate 1 has good heat dispersion, and the material of heat-conducting substrate 1 is one or more in molybdenum, aluminium, nickel, copper, copper tungsten, aluminium nitride.Reflector 3 is metal level, alloy-layer, DBR(distributed bragg reflector mirror) one or more in total reflection film; Wherein, metal level is aluminium or silver, and alloy-layer is the multi-layer compound structure of aluminium or silver; Bonded layer 2 is gold or tin; Can improve light extraction efficiency by reflector 3, meanwhile, the heat produced when LED chip body 11 can be worked by heat-conducting substrate 1 is distributed in time, improves the heat-conductive characteristic of LED chip body 11.
Described substrate 4 is sapphire substrate, in order to the absorption of the thermal resistance and light transmitting procedure in sapphire substrate that reduce sapphire substrate, undertaken thinning by substrate 4, the thickness of substrate 4 is 10 ~ 50 μm, greatly can reduce the thermal resistance of LED chip itself and improve the overall light extraction efficiency of LED chip.N electrode 6, P electrode 7 are connected with substrate 4 by extension luminescent layer 5, described extension luminescent layer 5 comprises the n type gallium nitride layer be covered on substrate 4 surface, described n type gallium nitride layer is coated with quantum well, described quantum well is provided with P type gallium nitride layer, wherein, N electrode 6 is electrically connected with n type gallium nitride layer, and P electrode 7 is electrically connected with P type gallium nitride layer.
As shown in Fig. 2 ~ Fig. 4: in order to can said structure be formed, can be realized by following step, particularly:
A, provide substrate 4, and growing epitaxial luminescent layer 5 on the substrate 4; Deposit protective layer 8 on the surface of described extension luminescent layer 5, and on the surface of described protective layer 8 evaporation one deck transfer bonded layer 9; Protective layer 8 is generally silicon dioxide, and the material of transfer bonded layer 9 is gold or tin;
B, provide middle transglutaminase substrate 10, middle transglutaminase substrate 10 is connected with transfer bonded layer 9 bonding by high pressure bonding pattern bonding, thus can extension luminescent layer 5 and substrate 4 connected, obtain structure as shown in Figure 2; The material of middle transglutaminase substrate 10 is generally metal, as aluminium, copper, tungsten-copper alloy etc.; Can be convenient to realize thinning to substrate 4 by middle transglutaminase substrate 10;
C, use polishing grinding equipment carry out thinning to substrate 4, make the thickness of substrate 4 be 10 ~ 50 μm; And by CMP(chemical mechanical polishing) carry out polishing;
D, substrate 4 correspondence arrange extension luminescent layer 5 opposite side surface evaporation reflector 3, and on described reflector 3 evaporation bonded layer 2;
E, provide heat-conducting substrate 1, heat-conducting substrate 1 by high pressure bonding pattern and bonded layer 2 bonding, thus can link into an integrated entity with substrate 4, as shown in Figure 3;
F, remove middle transglutaminase substrate 10, transfer bonded layer 9 and the protective layer 8 above substrate 4 by chemistry or the mode of physics, obtain the structure in Fig. 4;
G, the Conventional process steps such as required photoetching, etching, evaporation, cutting are carried out to the extension luminescent layer 5 on above-mentioned substrate 4, to form corresponding LED chip structure, obtain LED chip body 11.
As shown in Figure 1: during work, LED chip body 11 is connected with external power source by P electrode 7, N electrode 6.After LED chip body 11 is connected with external power source, extension luminescent layer 5 starts luminescence.When the some light of extension luminescent layer 5 is through substrate 4, light reflection can be arranged the surface of P electrode 7, N electrode 6 by reflector 3 to correspondence, to improve light extraction efficiency.Simultaneously, the heat produced when extension luminescent layer 5 works can act on the substrate 4, because the reflector 3 on substrate 4 and bonded layer 2 all have good capacity of heat transmission with heat-conducting substrate 1, and area of dissipation is large, heat on substrate 4 can be conducted in time, avoid heat gathering at substrate 4, improve the radiating effect of LED chip body 11, reduce the thermal resistance of LED chip self, improve reliability and the life-span of LED chip.
Claims (1)
1. improve a manufacture method for heat conducting LED chip, comprise LED chip body (11), described LED chip body (11) comprises substrate (4) and is positioned at P electrode (7) and the N electrode (6) of described substrate (4) top; Described substrate (4) correspondence arranges P electrode (7) and is coated with reflector (3) with N electrode (6) opposite side surface, and described reflector (3) are provided with bonded layer (2); Substrate (4) is connected with heat-conducting substrate (1) bonding by bonded layer (2); It is characterized in that:
A, provide substrate (4), and at the upper growing epitaxial luminescent layer (5) of substrate (4); Deposit protective layer (8) on the surface of described extension luminescent layer (5), and on the surface of described protective layer (8) evaporation one deck transfer bonded layer (9); Protective layer (8) is silicon dioxide, and the material of transfer bonded layer (9) is gold or tin;
B, provide middle transglutaminase substrate (10), middle transglutaminase substrate (10) is connected with transfer bonded layer (9) bonding by high pressure bonding pattern bonding, thus can be connected with extension luminescent layer (5) and substrate (4); The material of middle transglutaminase substrate (10) is metal; Can be convenient to realize thinning to substrate (4) by middle transglutaminase substrate (10);
C, use polishing grinding equipment carry out thinning to substrate (4), make the thickness of substrate (4) be 10 ~ 50 μm; And carry out polishing by chemical mechanical polishing;
D, opposite side evaporation reflector, surface (3) of extension luminescent layer (5) is set in substrate (4) correspondence, and at described reflector (3) upper evaporation bonded layer (2);
E, provide heat-conducting substrate (1), heat-conducting substrate (1) by high pressure bonding pattern and bonded layer (2) bonding, thus can link into an integrated entity with substrate (4);
F, the middle transglutaminase substrate (10) being removed substrate (4) top by mode that is chemical or physics, transfer bonded layer (9) and protective layer (8);
G, required photoetching, etching, evaporation, cutting are carried out to the extension luminescent layer (5) on above-mentioned substrate (4), to form corresponding LED chip structure, obtain LED chip body (11);
Described heat-conducting substrate (1) is molybdenum, one or more of material in aluminium, nickel, copper, copper tungsten, aluminium nitride;
Described reflector (3) is metal level, one or more in alloy-layer, DBR total reflection film;
Described substrate (4) is sapphire substrate;
Described extension luminescent layer (5) comprises the n type gallium nitride layer be positioned on substrate (4), is positioned at the quantum well on n type gallium nitride layer and is positioned at the P type gallium nitride layer in described quantum well; P electrode (7) is electrically connected with P type gallium nitride layer, and N electrode (6) is electrically connected with n type gallium nitride layer;
The material of described bonded layer (2) comprises gold or tin;
The material of described metal level comprises silver or aluminium.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210045092.6A CN102569573B (en) | 2012-02-28 | 2012-02-28 | Improve heat conducting LED chip |
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| CN201210045092.6A CN102569573B (en) | 2012-02-28 | 2012-02-28 | Improve heat conducting LED chip |
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| CN102569573A CN102569573A (en) | 2012-07-11 |
| CN102569573B true CN102569573B (en) | 2016-03-16 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104576875A (en) * | 2013-10-21 | 2015-04-29 | 江苏豪迈照明科技有限公司 | Integrally encapsulated LED lamp |
| CN104633486B (en) * | 2013-11-07 | 2018-09-07 | 陈宗烈 | A kind of LED bulb |
| CN104201277B (en) * | 2014-09-10 | 2017-04-26 | 厦门乾照光电股份有限公司 | High-power infrared light emitting diode |
| CN106287580A (en) * | 2015-06-02 | 2017-01-04 | 深圳市光峰光电技术有限公司 | Wavelength converter and preparation method thereof, related lighting fixtures and optical projection system |
| CN105914275B (en) * | 2016-06-22 | 2018-04-27 | 天津三安光电有限公司 | Inverted light-emitting diode (LED) and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201019499A (en) * | 2008-11-07 | 2010-05-16 | Nat Univ Chung Hsing | LED chip with an adhesive layer capable of reflecting light |
| WO2011126248A2 (en) * | 2010-04-06 | 2011-10-13 | Seoul Opto Device Co., Ltd. | Light emitting diode and method of fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH11238913A (en) * | 1998-02-20 | 1999-08-31 | Namiki Precision Jewel Co Ltd | Semiconductor light-emitting device chip |
| KR100867541B1 (en) * | 2006-11-14 | 2008-11-06 | 삼성전기주식회사 | Method of manufacturing vertical light emitting device |
| CN101188259A (en) * | 2006-11-15 | 2008-05-28 | 杭州士兰明芯科技有限公司 | Low thermal resisting LED chip and making method |
| CN102214751B (en) * | 2011-06-07 | 2012-10-10 | 晶科电子（广州）有限公司 | Luminescent device with vertical structure and manufacturing method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201019499A (en) * | 2008-11-07 | 2010-05-16 | Nat Univ Chung Hsing | LED chip with an adhesive layer capable of reflecting light |
| WO2011126248A2 (en) * | 2010-04-06 | 2011-10-13 | Seoul Opto Device Co., Ltd. | Light emitting diode and method of fabricating the same |
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Effective date of registration: 20160422 Address after: 214192 Wuxi, Xishan, Xishan Economic Development Zone, North Road, unity, No. 18, No. Patentee after: JIANGSU XGL OPTOELECTRONICS CO., LTD. Address before: 214111, No. 18, unity North Road, Xishan Economic Development Zone, Xishan District, Jiangsu, Wuxi Patentee before: Jiangsu Xinguanglian Technology Co., Ltd. |