201115070 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種散熱基板，特別指一種具有人造鑽 石散熱層’而可應用於LED或CPU等電子元^，以^效 改善5亥專電子元件的散熱問題。 f 【先前技術】 發光二極體(LED)於現今科技的應用，在可見光部分包 括螢幕、照明、液晶榮幕及手機上按鍵的背光源；二 見光部分則有無線通訊用紅外線遙控器、感測器及光纖通 q 訊光源。 LED的作用係將電能轉為光能，而在光能產生的過程 亦會產生屋度，尤其在P-N接面（P-N Junction)處為LED溫 度的主要來源。隨著高功率LED開發成功及應用'led = 工作溫度已經是其應用上必須克服的問題；尤其，已知溫 度對LED的發光效率、壽命、色溫，甚至是無^通訊的^ 質’如噪音雜訊比（Signal-to-noise ratio，SNR)都會產生影 響。 LED的散熱方式，可以是在LED封裝時於結合一散熱 基板，以熱導的方式將LED晶粒的積熱導出。常用的散: ° 基板有印刷電路板(PCB)、金屬基印刷電路板(Metal Coi PCB;MCPCB)、陶瓷基板(Ceramic Substrate)及直接銅接合 基板(Direct Bond Cu; DBC)。PCB雖具有極廣泛的商業; 途’但其材質的散熱性較適於0.2W以下的低功率LED， 1W以上的高功率LED通常都使用金屬基板，或具有較高 散熱能力、耐熱性及氣密性的陶瓷基板。 LED的另外散熱方式，可以從磊晶階段的材料選擇著 手，例如常用於氮化鎵系（GaN)發光二極體磊晶的藍寶石基 板(Sapphire Substrate)，因導熱係數低(約35W/mK)而不^ 於高功率LED晶粒的散熱，可以改成導熱係數較高的銅基 板或銅鎢合金(Cu-WAll〇y)基板，但後者除價格較高外，亦 201115070 存在與磊晶材料晶格匹配的問題。 【發明内容】 降低LED的工作溫度攸關LED的各項性能的提升， 而且也可加快高功率LED的發展步程。因此，本發明提供 一種散熱基板，係可增進LED的散熱效率’以解決LED 的散熱問題。 如上所述本發明之散熱基板，包括：一基板，其一表 面形成複數的柱狀物；一散熱層，沉積於基板設有複數柱 狀物的表面，並包覆複數柱狀物至一沉積高度；一導電層， 係覆蓋於散熱層上方及複數柱狀物的頂端。 如上述的散熱基板，其中基板材料可為導體或半導體 其中之一，例如：銅、銅合金、銘或銘合金，或者，石夕、 鍺或碳化石夕等材料；散熱層為人造鑽石，而導電層為金屬。 如上述的散熱基板，其中散熱層的沉積高度係略低於 柱狀物頂端。 如上述的散熱基板，其中散熱層的鑽石為單晶鑽石或 多晶鑽石，較佳為多晶鑽石（Polycrystalline Diamond; PCD)。鑽石為既知材料中硬度最高者，而其導熱係數約 1000-2650 W/mK，是銅的五倍之多，因此本發明以鑽石做 為散熱層，可預期達到高散熱效率的效果。 如上述的散熱基板，其中散熱層沉積方式較佳選自化 學氣相沉積法（Chemical Vapor Deposition)、物理氣相沉積 法（Physical Vapor Deposition)、溶解析出法（Chemical Solution Deposition)、脈衝雷射沉積法（Pulsed Laser Deposition)、分子束蠢晶法(Molecular Beam Epitaxy)、電鍍 法(Electroplating)其中一種，而最佳為化學氣相沉積法。 如上述本發明的散熱基板，除由散熱層提供優於目前 所有散熱材料的高散熱效率外，亦由具導電能力的導電層 及基板提供一部分的散熱效能。因此，本發明的散熱基板 在應用於LED後，可以解決高功率LED的散熱問題，並 201115070 朝更咼功率LED的目標邁進。 【實施方式】 以下配合圖式並列舉至少〆實施例具體以說明本發明 的較佳實施方式及其特性。 如第一圖所示的為本發明散熱基板1的較佳實施例之 結構前剖視圖，其結構包括：一基板1〇，其一表面11形 成複數的柱狀物12 ; —散熱層20，係沉積於基板1〇設有 複數柱狀物12的表面11，並包覆複數柱狀物至一沉積高 度；一導電層30，係覆蓋於散熱層20上方及複數柱狀物 12的頂端。 #如上所述的散熱基板，其中，基板10材料可為導體或 半導體其中之一，例如 :銅、銅合金、銘或銘合金，或者， =、錯或碳化矽等材料。其中，散熱層20在本發明較佳實 $例中係利用化學氣相沉積所成長的鑽石鑛膜，且較佳的 ，人造多晶鑽石鍍膜。其中，導電層30為以任何導電 所構成的金屬膜。 、 如第二圖所示的基筮一圖撤埶某拓沾氐加衫,201115070 VI. Description of the Invention: [Technical Field] The present invention relates to a heat-dissipating substrate, in particular to a heat-dissipating layer having an artificial diamond, which can be applied to an electronic component such as an LED or a CPU. Heat dissipation of components. f [Prior Art] The application of light-emitting diode (LED) in today's technology, including the backlight of the screen, the illumination, the LCD screen and the button on the mobile phone in the visible part; the second part of the light has the infrared remote control for wireless communication, the sense Detector and fiber optic communication source. The role of LEDs is to convert electrical energy into light energy, which is also generated during the process of light energy generation, especially at the P-N Junction where it is the main source of LED temperature. With the development of high-power LEDs and the application of 'led = operating temperature has been a problem that must be overcome in its application; in particular, the temperature is known to the LED's luminous efficiency, lifetime, color temperature, and even the quality of the communication, such as noise The signal-to-noise ratio (SNR) has an effect. The heat dissipation method of the LED may be to combine the heat dissipation of the LED die by heat conduction in the LED package. Commonly used dispersion: ° The substrate has a printed circuit board (PCB), a metal-based printed circuit board (Metal Coi PCB; MCPCB), a ceramic substrate (Ceramic Substrate), and a direct copper bonded substrate (Direct Bond Cu; DBC). Although PCB has a very wide range of commercial applications, the heat dissipation of the material is suitable for low-power LEDs below 0.2W. High-power LEDs above 1W usually use metal substrates, or have high heat dissipation, heat resistance and gas. A dense ceramic substrate. The additional heat dissipation method of the LED can be started from the material selection in the epitaxial stage, for example, the sapphire substrate (Sapphire Substrate) which is commonly used for the epitaxy of gallium nitride (GaN) light-emitting diodes, because of low thermal conductivity (about 35 W/mK). Instead of the heat dissipation of the high-power LED die, it can be changed to a copper substrate or a copper-tungsten alloy (Cu-WAll〇y) substrate with a high thermal conductivity. However, in addition to the higher price, the latter also has an epitaxial material in 201115070. The problem of lattice matching. SUMMARY OF THE INVENTION Reducing the operating temperature of an LED improves the performance of the LED, and also accelerates the development of high-power LEDs. Therefore, the present invention provides a heat dissipating substrate which can improve the heat dissipation efficiency of the LED to solve the heat dissipation problem of the LED. The heat dissipation substrate of the present invention includes: a substrate having a plurality of pillars formed on one surface thereof; a heat dissipation layer deposited on the surface of the substrate on which the plurality of pillars are disposed, and coating the plurality of pillars to a deposition Height; a conductive layer covering the top of the heat dissipation layer and the top of the plurality of pillars. The heat dissipation substrate, wherein the substrate material may be one of a conductor or a semiconductor, such as copper, copper alloy, Ming or Ming alloy, or a material such as Shi Xi, 锗 or carbon stone; the heat dissipation layer is an artificial diamond, and The conductive layer is a metal. A heat dissipating substrate as described above, wherein a deposition height of the heat dissipation layer is slightly lower than a top end of the column. For example, in the above heat dissipating substrate, the diamond of the heat dissipating layer is a single crystal diamond or a polycrystalline diamond, preferably a polycrystalline diamond (PCD). Diamond is the hardest among the known materials, and its thermal conductivity is about 1000-2650 W/mK, which is five times that of copper. Therefore, the present invention uses diamond as a heat dissipation layer, and can achieve the effect of high heat dissipation efficiency. The heat dissipation substrate is preferably selected from the group consisting of a chemical vapor deposition method, a chemical vapor deposition (Physical Vapor Deposition), a physical solution deposition (Chemical Solution Deposition), and a pulsed laser deposition. One of the methods of Pulsed Laser Deposition, Molecular Beam Epitaxy, and Electroplating, and the best is chemical vapor deposition. The heat dissipating substrate of the present invention, as described above, provides a heat dissipation efficiency superior to that of all current heat dissipating materials by the heat dissipating layer, and also provides a part of the heat dissipating performance by the electrically conductive layer and the substrate. Therefore, the heat-dissipating substrate of the present invention can solve the heat-dissipating problem of the high-power LED after being applied to the LED, and the 201115070 is moving toward the goal of the more powerful power LED. [Embodiment] The following detailed description is made to illustrate preferred embodiments of the invention and the features thereof. As shown in the first figure, a front cross-sectional view of a preferred embodiment of the heat dissipating substrate 1 of the present invention comprises: a substrate 1 having a surface 11 forming a plurality of pillars 12; a heat dissipating layer 20 A surface 11 of the plurality of pillars 12 is deposited on the substrate 1 and coated with a plurality of pillars to a deposition height. A conductive layer 30 covers the heat dissipation layer 20 and the top ends of the plurality of pillars 12. The heat dissipating substrate as described above, wherein the material of the substrate 10 may be one of a conductor or a semiconductor, such as copper, copper alloy, Ming or Ming alloy, or material such as =, wrong or tantalum carbide. Among them, the heat dissipation layer 20 is a diamond ore film grown by chemical vapor deposition in a preferred embodiment of the present invention, and preferably a man-made polycrystalline diamond coating film. Among them, the conductive layer 30 is a metal film formed of any conductivity. , as shown in the second figure, the 筮 筮 图 埶 埶 埶 埶 埶
導電層30可以經 ;板10，使本發明 由^30/斤包覆並形成電性導接，如此，導 之又m今積，將電性轉實導接至基相 熱f板1同時兼具散熱及導電的能力。 如弟二圖所元· 66炎士路HB w ,,,The conductive layer 30 can pass through the board 10, so that the present invention is covered by ^30/jin and forms an electrical connection, so that the conductive material is electrically connected to the base phase heat-f plate 1 and simultaneously Ability to dissipate heat and conduct electricity. Such as the brother of the second map of the Yuan · 66 Yanshi Road HB w,,,
201115070 中；第四B圖的柱狀物12B成縱線地佈設於散熱層20B 中；第四C圖的柱狀物12C與散熱層20C形成交錯的格 狀；第四D圖的柱狀物12D則將散熱層20D分割成不同尺 寸面積。 上述形成散熱基板的方式，該晶圓片40亦可以是其他 適合的形狀’如方形等。柱狀物12的形狀除實施例所顯示 的四方型外，亦可以是任何幾何或非幾何的形狀，如圓形、 三角形、五角形、六角或八角形或其他多角不規則形狀。 如第五圖所示的為本發明散熱基板的較佳實施例結構 應用於LED元件的結構前剖視圖，其中一個η邊朝上 (n-side up)的LED元件50以其ρ邊(p_side)5i與本發明散 熱基板1的導電層30互相貼合，如此led元件50透過導 電層30連接基板10完成電性導通，同時led的工作溫度 亦透過導電層30傳導至散熱層2〇形成主要散熱部分，而 導電層30及基板10亦提供一部分的散熱效能。 本發明如上述的散熱基板1亦可應用於cpu元件6〇, 如第六圖所示。 、以上實施例僅為說明本發明的較佳實施方式，並非用 =限制本發明的權利範圍，任何本領域之通常知識者，在 二酌本發明如上揭露之技術說日月後，所進行不，轉本發明 ==改變、修飾’皆是可能 際明之申請專利範圍中所述者。 圖。第-圖為本發明散熱基板的較佳實施例之結構前剖視 弟一圖為第一圖的局部詳圖。 圖 第一圖為本叙明散熱基板的較佳實施例之結構俯损 散熱圖圖為本發明之散熱基板的基板柱狀物歲 201115070 第五圖為本發明散熱基板的較佳實施例結構應用於 LED元件的結構前剖視圖。 第六圖所示的為本發明散熱基板的較佳實施例結構應 用於CPU元件的結構前剖視圖。 【主要元件符號說明】 I 散熱基板 10 基板 II 表面 12、12A、12B、12C、12D 柱狀物 121裸段In 201115070, the pillars 12B of the fourth B diagram are arranged in the longitudinal direction of the heat dissipation layer 20B; the pillars 12C of the fourth C diagram form a staggered lattice shape with the heat dissipation layer 20C; the pillars of the fourth D diagram The 12D divides the heat dissipation layer 20D into different size areas. In the above manner of forming the heat dissipation substrate, the wafer 40 may have other suitable shapes such as squares or the like. The shape of the pillars 12 may be any geometric or non-geometric shape, such as a circular, triangular, pentagonal, hexagonal or octagonal shape or other polygonal irregular shape, in addition to the square shape shown in the embodiment. A structure of a preferred embodiment of the heat dissipating substrate of the present invention, as shown in FIG. 5, is applied to a front cross-sectional view of an LED element, wherein an n-side up LED element 50 has its p side (p_side) 5i and the conductive layer 30 of the heat dissipating substrate 1 of the present invention are adhered to each other, so that the LED element 50 is electrically connected to the substrate 10 through the conductive layer 30, and the working temperature of the LED is also transmitted to the heat dissipation layer 2 through the conductive layer 30 to form a main heat dissipation. In part, the conductive layer 30 and the substrate 10 also provide a portion of the heat dissipation performance. The heat dissipating substrate 1 of the present invention as described above can also be applied to the cpu element 6A as shown in the sixth figure. The above embodiments are merely illustrative of the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. Any one of ordinary skill in the art, after the date of the invention disclosed above, Turning to the invention == change, modification 'is all described in the scope of the patent application. Figure. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front cross-sectional view showing a preferred embodiment of a heat dissipating substrate of the present invention. FIG. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a structure of a heat dissipating substrate according to a preferred embodiment of the present invention. FIG. 1 is a substrate column of a heat dissipating substrate of the present invention. A front cross-sectional view of the structure of the LED element. Fig. 6 is a front cross-sectional view showing the structure of a preferred embodiment of the heat dissipating substrate of the present invention applied to the CPU element. [Main component symbol description] I Heat-dissipating substrate 10 Substrate II Surface 12, 12A, 12B, 12C, 12D Column 121 Bare segment
20、20A、20B、20C、20D 散熱層 30 導電層 40 晶圓片 50 LED元件 51 p 邊(p-side) 60 CPU元件20, 20A, 20B, 20C, 20D Heat sink 30 Conductive layer 40 Wafer 50 LED components 51 p Side (p-side) 60 CPU components