CN206864498U - A kind of flip LED chips array structure - Google Patents
A kind of flip LED chips array structure Download PDFInfo
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- CN206864498U CN206864498U CN201720787845.9U CN201720787845U CN206864498U CN 206864498 U CN206864498 U CN 206864498U CN 201720787845 U CN201720787845 U CN 201720787845U CN 206864498 U CN206864498 U CN 206864498U
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Abstract
The utility model discloses a kind of flip LED chips array structure, including：The transparent substrates being made of clear material, it is arranged at the cushion on the surface of transparent substrates one, it is formed at the N-type semiconductor structure sheaf and P-type semiconductor structure sheaf of cushion, the current-diffusion layer being made of an electrically conducting material, it is arranged above P-type semiconductor structure sheaf, the passivation layer made of transparent insulation material, it is covered in current-diffusion layer, P-type semiconductor structure sheaf, the top of N-type semiconductor structure sheaf；The multiple N-type electrode window regions in array arrangement contacted with N-type semiconductor structure sheaf；The P-type electrode window region contacted with P-type semiconductor structure sheaf；N-type electrode window region is provided with N-type electrode, and the P-type electrode window region is provided with P-type electrode, and P-type electrode is identical with the height of N-type electrode.Increase the luminous effective area of high-power LED chip；Increase effective contact area between chip electrode and heat-radiating substrate, better heat-radiation effect；Improve the service life of chip.
Description
Technical field
A kind of flip LED chips are the utility model is related to, more particularly to a kind of flip LED chips array structure.
Background technology
White LED light source is as forth generation green illumination light source, because it has high efficiency, high brightness, small volume, use
The advantages that long lifespan, power consumption are low, environmentally friendly, it is expected to substitute the conventional illumination sources such as conventional incandescent, fluorescent lamp, Halogen lamp LED, is
The wide variety of high-quality light source of a new generation, by as the essential illuminations of industry, life.But at present LED core
Piece power is done greatly, preferably solves the heat-sinking capability of chip again, is improved chip brightness, is that current great power LED runs into most
Big technical bottleneck.Traditional LED packaged types, will each just then according to the power demand of light fixture all by the way of formal dress
Fill packaged lamp bead and integrate SMT pasters to heat-radiating substrate.Conventional method has the disadvantages that：（1）Each chip will be single
Solely it is packaged into small base to be then affixed on big radiating module, one single chip power is done less, tedious process；（2）Due to using just
Dress mode, current-diffusion layer and metal electrode are all square on the active area, have absorption effects to the light that active area is sent, have 20%-
More than 30% goes out light loss, and light extraction efficiency is low；（3）Positive cartridge chip is by metal lead wire heat conduction, and heat conduction effective area is small, heat conduction
Path length, radiating effect do not have the good heat dissipation effect of flip-chip.
Although also having LED chip flip scheme at present, traditional LED flip-chip schemes have the disadvantages that：
（1）Flip LED chips CURRENT DISTRIBUTION is uneven, and upside-down mounting electrode is single, the corresponding N-type electrode of an only P-type electrode, exists
Chip regional area current density is excessive, and the power that the inequality of electric current directly contributes chip is restricted, in high current building ring
Under border, accelerate to shorten the service life of chip；（2）Due to the limitation of power so that the size of LED chip is also restrained, makes
The effective contact area obtained between chip P-type electrode and heat-radiating substrate also diminishes, and radiating effect lifting is limited；（3）Due to chip chi
It is very little to be restricted, want to increase power, multiple LED chips can only be distinguished to face-down bonding on same heat-radiating substrate, added
The triviality of flip chip bonding process；（4）The limitation of chip size causes the cutting increasing number of same epitaxial wafer chip, cutting institute band
The loss come directly affects the effective rate of utilization of product.
Utility model content
It is for technical problem existing for above-mentioned prior art, the purpose of the utility model：Provide a kind of flip LED chips
Array structure, there is provided the small area N-type electrode of single large area P-type electrode, and multiple arrays, chip is set not limited by size
System, increases the chip light emitting effective area of great power LED, improves luminosity；Increase between chip electrode and heat-radiating substrate
Effective contact area, shorten thermally conductive pathways so that chip cooling is better；By setting multiple N-type electrodes come uniformly
Distributed current densities, avoid chip local current excessive and cause chip fire damage, improve the service life of chip.
The technical solution of the utility model is：
A kind of flip LED chips array structure, including：
One transparent substrates, are made of clear material, and have a first surface and relative with the first surface one second
Surface；
One cushion, is arranged at first surface；
One N-type semiconductor structure sheaf, is formed at cushion；
One P-type semiconductor structure sheaf, is formed at N-type semiconductor structure sheaf；
One current-diffusion layer, is made of an electrically conducting material, and is arranged above P-type semiconductor structure sheaf；
One passivation layer, is made up of transparent insulation material, is covered in current-diffusion layer, P-type semiconductor structure sheaf, N-type and partly leads
The top of body structure sheaf；
The multiple N-type electrode window regions contacted with N-type semiconductor structure sheaf, the N-type electrode window region are arranged in array
Cloth；
The P-type electrode window region contacted with P-type semiconductor structure sheaf；
The N-type electrode window region is provided with N-type electrode, and the P-type electrode window region is provided with P-type electrode, the p-type
Electrode is identical with the height of N-type electrode.
Preferably, the transparent substrates are synthesized by the one or more in sapphire, gallium nitride, aluminium nitride.
Preferably, the current-diffusion layer is from silver, indium tin oxide（ITO）, fluorine tin-oxide, chromium tin-oxide, stone
One or more kinds of synthesis in black alkene.
Preferably, the material of the passivation layer is silica, silicon nitride, silicon oxynitride, the one or more of aluminum oxide
Synthesis.
Preferably, the P-type electrode and N-type electrode are inverted on package substrate, and the package substrate includes welding region
Metal interconnection circuit layer, insulating barrier and heat-radiating substrate.
Preferably, the second surface of the transparent substrates is covered with phosphor powder layer.
Compared with prior art, the utility model has the advantages that：
The utility model is provided with single large area P-type electrode, and the small area N-type electrode of multiple arrays, whole core
The electric current distribution of piece is uniform, improves the power of chip by changing size and the electrode structure of chip, while use
The mode of dress, whole flip-chip is connected on heat-radiating substrate, because P-type electrode is that large area is continuous, makes chip electrode
Greatly increased with the fitting effective area of heat-radiating substrate, thermally conductive pathways also greatly shorten, and the heat of active area can pass through chip
Electrode is quickly oriented to heat-radiating substrate, is effectively radiated, and on the other hand due to being upside-down mounting, whole exiting surface is non-electrode
Face, light extraction effective area greatly improve, and improve external quantum efficiency.
Flip chip bonding process is simple, and the cutting quantity of same epitaxial wafer chip is few, increases the effective rate of utilization of product.
Brief description of the drawings
Below in conjunction with the accompanying drawings and embodiment is further described to the utility model：
Fig. 1 is the flow chart of the preparation method of the utility model flip LED chips array structure；
Fig. 2 is the structural representation of substrate epitaxial piece in the utility model；
Fig. 3 is the structural representation of N-type region window in the utility model；
Fig. 4 is the structural representation of passivation layer in the utility model, current-diffusion layer；
Fig. 5 is P-type electrode window region in the utility model, the structural representation of N-type electrode window region；
Fig. 6 is the structural representation of P electrode in the utility model, N electrode；
Fig. 7 is the structure top view of the big module of LED chip in the utility model；
Fig. 8 is the flip-chip bonded structure schematic diagram of the big module of LED chip in the utility model.
Embodiment
To make the purpose of this utility model, technical scheme and advantage of greater clarity, with reference to embodiment
And referring to the drawings, the utility model is further described.It should be understood that these descriptions are merely illustrative, and do not really want
Limit the scope of the utility model.In addition, in the following description, the description to known features and technology is eliminated, to avoid not
Necessarily obscure concept of the present utility model.
Embodiment：
As shown in figure 1, the preparation method of flip LED chips array structure, comprises the following steps：
（1）It is used as from a kind of or above material multiple elements design body in sapphire, gallium nitride, aluminium nitride material outer
The transparent substrates 1 of epitaxial growth.
（2）In the surface of transparent substrates 1 successively epitaxial growth buffer 2, N-type GaN semiconductor structure layers 3 and p-type GaN half
Conductor structure layer 4, substrate epitaxial piece is obtained, as shown in Figure 2.
（3）Go out multiple N-type regions in extension structure sheaf surface etch using semiconductor process techniques such as photoetching, development, etchings
Window 5, multiple small area N-type region windows 5 are arranged in array, as shown in Figure 3.
（4）Current-diffusion layer 6 is prepared with the methods of mask, sputtering, stripping, because the area of N-type region window 5 all compares
It is smaller, it is not necessary to carry out current expansion, therefore N-type region window 5 can not cover current-diffusion layer 6.The effect of current-diffusion layer 6
It is to make chip current Density Distribution uniform, the current-diffusion layer is from silver, indium tin oxide（ITO）, fluorine tin-oxide, chromium tin
One or more kinds of synthetic materials in the good conductive material of the Ohmic contacts such as oxide, graphene.
（5）Use plasma activated chemical vapour deposition（PECVD）Method deposition prepare passivation layer 7, passivation layer 7 is covered each by
It is arranged at current-diffusion layer 6, p-type GaN semiconductor structure layers 4, the top of N-type GaN semiconductor structure layers 3.The effect of passivation layer 7
It is to prevent from leaking electricity, plays a part of protective layer, the material of passivation layer is saturating for silica, silicon nitride, silicon oxynitride, aluminum oxide etc.
Bright insulating materials.As shown in Figure 4.
（6）The system of P-type electrode window region 8 and N-type electrode window region 9 is carried out using techniques such as photoetching, development, wet etchings
It is standby.P-type electrode window region 8 is preferably joined together, and multiple small area N-type electrode window regions 9 are arranged in array.Such as Fig. 5 institutes
Show.
（7）The related process such as deposited by electron beam evaporation, metal-stripping prepare P-type electrode 10 and N-type electrode 11, the p-type electricity
The material of pole 10 and N-type electrode 11 is a kind of or more in the metal materials such as chromium, platinum, gold, nickel, titanium, copper, indium, tin, lead, silver
Kind synthetic.The height of P-type electrode 10 and N-type electrode 11 is preferably identical.Then the process of annealed alloy is used, makes each gold
Belong to interlayer and form Ohmic contact.As shown in Figure 6.
Fig. 7 is the structure top view of the big module of whole LED chip in the utility model, by the N electrode 11 of multiple small areas
The negative, positive electrode of whole chip is formed with the P electrode 10 of single large area, is to pass through passivation layer between N electrode 11 and P electrode 10
7 keep apart, and passivation layer 7 plays the function of preventing that chip from leaking electricity, and has a protective effect.
The big module of whole LED chip is mounted to the radiating for being provided with metal interconnection circuit layer 12 with the method for flip chip bonding
On substrate 13, as shown in Figure 8.Attaching method in flip chip bonding has eutectic alloy technique, BGA to plant ball technique, tin cream silk-screen printing
Technique, the utility model use one kind in the above method, and preferential uses eutectic alloy technique.Weldering in eutectic alloy technique
Material 14 is one or more polynary synthetics in gold, indium, lead, silver, tin.Be between metal interconnection circuit layer 12 by circuit every
Keep apart from insulating barrier 15 and insulating barrier 16.Then phosphor powder layer 17 is prepared in the big module exiting surface of whole LED chip, it is glimmering
The preparation of light bisque 17, it can be prepared by way of spraying, rotate, print.High brightness can be prepared by the above method
Super high power white light LEDs.
Super high power white light LEDs prepared by the utility model method, it can be designed according to power demand according to chip size
Go out the size of power, emitting brightness is higher, and using the structure of flip chip bonding, radiating effect is more preferable, is adapted to large-scale mass production, can
It is widely used in semiconducting solid lighting field.
It should be appreciated that above-mentioned embodiment of the present utility model is used only for exemplary illustration or explains this reality
With new principle, without forming to limitation of the present utility model.Therefore, without departing from spirit and scope of the present utility model
In the case of any modification, equivalent substitution and improvements done etc., should be included within the scope of protection of the utility model.In addition,
The appended claims for the utility model are intended to fall into scope and border or this scope and border
Whole in equivalents changes and modifications example.
Claims (6)
- A kind of 1. flip LED chips array structure, it is characterised in that including：One transparent substrates, are made of clear material, and have a first surface and a second surface relative with the first surface；One cushion, is arranged at first surface；One N-type semiconductor structure sheaf, is formed at cushion；One P-type semiconductor structure sheaf, is formed at N-type semiconductor structure sheaf；One current-diffusion layer, is made of an electrically conducting material, and is arranged above P-type semiconductor structure sheaf；One passivation layer, is made up of transparent insulation material, is covered in current-diffusion layer, P-type semiconductor structure sheaf, N-type semiconductor knot The top of structure layer；The multiple N-type electrode window regions contacted with N-type semiconductor structure sheaf, the N-type electrode window region are arranged in array；The P-type electrode window region contacted with P-type semiconductor structure sheaf；The N-type electrode window region is provided with N-type electrode, and the P-type electrode window region is provided with P-type electrode, the P-type electrode It is identical with the height of N-type electrode.
- 2. flip LED chips array structure according to claim 1, it is characterised in that the transparent substrates by sapphire, One or more kinds of synthesis in gallium nitride, aluminium nitride.
- 3. flip LED chips array structure according to claim 1, it is characterised in that the current-diffusion layer selection silver, Indium tin oxide（ITO）, fluorine tin-oxide, chromium tin-oxide, one or more kinds of synthesis in graphene.
- 4. flip LED chips array structure according to claim 1, it is characterised in that the material of the passivation layer is two One or more synthesis of silica, silicon nitride, silicon oxynitride, aluminum oxide.
- 5. flip LED chips array structure according to claim 1, it is characterised in that the P-type electrode and N-type electrode It is inverted on package substrate, the package substrate includes metal interconnection circuit layer, insulating barrier and the heat-radiating substrate of welding region.
- 6. flip LED chips array structure according to claim 1, it is characterised in that the second table of the transparent substrates Face is covered with phosphor powder layer.
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| CN201720787845.9U CN206864498U (en) | 2017-06-30 | 2017-06-30 | A kind of flip LED chips array structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146840A (en) * | 2017-06-30 | 2017-09-08 | 苏州瑞而美光电科技有限公司 | A kind of flip LED chips array structure and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146840A (en) * | 2017-06-30 | 2017-09-08 | 苏州瑞而美光电科技有限公司 | A kind of flip LED chips array structure and preparation method thereof |
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