CN202332853U - Large-power inverse array LED (Light-Emitting Diode) chip - Google Patents

Large-power inverse array LED (Light-Emitting Diode) chip Download PDF

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Publication number
CN202332853U
CN202332853U CN2011203990594U CN201120399059U CN202332853U CN 202332853 U CN202332853 U CN 202332853U CN 2011203990594 U CN2011203990594 U CN 2011203990594U CN 201120399059 U CN201120399059 U CN 201120399059U CN 202332853 U CN202332853 U CN 202332853U
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layer
array
type semiconductor
led chip
electrode
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CN2011203990594U
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邓朝勇
杨利忠
李绪诚
张荣芬
许铖
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Guizhou University
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Guizhou University
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Abstract

The utility model discloses a large-power inverse array LED (Light-Emitting Diode) chip. According to the structure of the large-power inverse array LED chip, the array LED chip comprises an array consisting of a plurality of array units, wherein the adjacent array units share an n-type buffering layer (3); each array unit is covered by the n-type buffering layer (3), an n-type semiconductor layer (6), an active layer (7), a p-type semiconductor layer (8), a transparent electrode layer (9) and a p-type electrode layer (10) in sequence above a sapphire substrate (2); an n-type electrode (5) is arranged between the two adjacent array units; the n-type electrode (5) and the p-type electrode (10) are covered by an insulating layer (4); an external metal heat radiation layer (11) covers a window of the p-type electrode layer coated by the insulating layer (4); a light emergent surface of the sapphire substrate (2) is treated to be a roughened surface (1); and the p-type electrode of the chip is made of metal with higher light reflectance, such as silver, aluminum and the like.

Description

High-power upside-down mounting array LED chip
Technical field
The utility model relates to a kind of upside-down mounting array LED chip, relates in particular to a kind of GaN base upside-down mounting array blue-light LED chip structure that comprises the MQW active area.
Background technology
White light LEDs has advantages such as brightness height, energy-conserving and environment-protective, has become one of the most potential lighting source.The energy consumption of white light LEDs is merely 1/8 of incandescent lamp, 1/2 of fluorescent lamp, and its life-span was 100,000 hours.This is " putting things right once and for all " concerning average family is bright, also can realize mercurylessly simultaneously, reclaims advantages such as easy, and is significant to environmental protection and energy savings.
The method for preparing at present large power white light LED mainly is on blueness or near ultraviolet LED chip, to apply yellow fluorescent powder, obtains white light through colour mixture.This method that obtains white light through blue-ray LED, simple structure, with low cost, technology maturity is high, therefore utilization is extensively.The above large power white light LED of most of 5W is processed by powerful blue-light LED chip.So make high-power blue-light LED chip is the basis that makes large power white light LED.
But the efficient of light taking-up is at present hanged down and the heat-sinking capability difference is the major technique bottleneck that great power LED faces.The led chip light of traditional structure takes out the low influence that mainly receives following factor of efficient: 1) material itself is to the absorption of light; 2) bonding welding point and lead-in wire blocking on the p electrode to light; 3) refractive index of material is different, on the interface, reflects, and causes light to be difficult for reaching from the GaN material of high index of refraction the peripheral air of low-refraction.4) CURRENT DISTRIBUTION is inhomogeneous.Part current density under the p electrode is big, and is luminous strong, aging fast.And the regional current density beyond the p electrode is little, luminous a little less than, aging slow.
Great power LED is generally operational under the 350mA electric current, and it is most important to the performance and the life-span of LED device to dispel the heat.The working temperature of pn knot but in design, should consider under the situation of long-term work that the pn knot remains on about 100 ℃ as far as possible generally between 110-120 ℃, 10 ℃ of the every risings of temperature, and luminous flux will decay 1%, the emission wavelength of the LED 1-2nm that will drift about.If can not the heat that chip produces be shed timely, can't obtain stable light and export and keep normal device lifetime.For the LED of GaN base, its active layer is in the center, and away from radiator, Sapphire Substrate also is the non-conductor of heat, and the problem of heat radiation is with even more serious.
Summary of the invention
The technical problem that the utility model will solve is, a kind of high-power upside-down mounting array LED chip is provided, and can effectively improve the luminous efficiency and the heat-sinking capability of high-power blue-ray LED flip-chip, deficiency such as the luminous efficiency that prior art exists is low to overcome, weak heat-dissipating.
The high-power upside-down mounting array LED chip of the utility model comprises substrate, n type semiconductor layer, active layer, p type semiconductor layer, electrode layer, insulating barrier, external metal level and passivation layer; The array LED chip is by a plurality of array element forming arrays, wherein all shared n type semiconductor layer of adjacent array element; Said array element is that the Sapphire Substrate top covers n type resilient coating, n type semiconductor layer, active layer, p type semiconductor layer, transparent electrode layer, p electrode layer successively; Between adjacent two array elements is the n electrode; And n electrode and p electrode layer are coated by insulating barrier; Above the p electrode layer window that insulating barrier coats, cover external metallic radiating layer; And also has passivation layer on external metallic radiating layer surface.
The exiting surface of Sapphire Substrate is treated to thick ultraization surface.
The n type semiconductor layer of flip LED chips and p type semiconductor layer are to be made up of semi-conducting materials such as GaN, GaAs or AlGaN; Wherein the impurity that mixes of n type layer is materials such as Si, and the impurity that p type layer mixes is materials such as Mg.
The active layer of upside-down mounting array LED chip is the InGaN of individual layer, or the InGaN layer of multilayer and GaN layer, forms multiple quantum well layer.
The n type semiconductor layer of all chip array unit is communicated with, and the shared therebetween n electrode of adjacent two array elements; The material of n electrode comprises Cu, Ti, Al, Ni or Au metal, adopts wherein single metal or combination metal.
The p electrode layer adopts metal A g or Al, and covers the transparent electrode layer of each array element fully;
The material of external metallic radiating layer comprises Cu, Ti, Al, Ni or Au metal, adopts wherein single metal or combination metal.
Insulating barrier and passivation layer are to be made up of SiOx, SiNx or SiOxNy insulating material.
Transparent electrode layer adopts metallic film Ni/Au or tin indium oxide (ITO) to make.
This chip is compared with traditional led chip, both can increase light-emitting area, improves luminous efficiency, can be good at improving the heat radiation of chip again.
Adjustment active layer structure (SQW like a plurality of materials forms composite quantum well) and material component (the adjustment doping content changes emission wavelength) can send out color of light multiple, and the utility model has also been contained this led chip category.
The above content of the utility model; Only provided a kind of embodiment that realizes the utility model; But chip structure in this scheme and the scheme and process conditions can change; This change does not break away from the thought and the scope of the utility model, and all changes clear to those skilled in the art oneself should be included in the scope of the said claims.
Description of drawings
Fig. 1 is the manufacturing process flow diagram of the utility model;
Fig. 2 is sapphire Al 2O 3(0001) epitaxial growth n-GaN layer, n on the face substrate +The figure in the cross section behind-GaN layer, active layer, p-GaN layer, transparency electrode and the Ag/Al metal electrode;
Fig. 3 is the plane graph that obtains after photoetching of n region electrode and the etching;
Fig. 4 is the A-A sectional view of Fig. 3;
The plane graph of Fig. 5 for obtaining after the n region electrode etching;
Fig. 6 is the A-A sectional view of Fig. 5
Fig. 7 is SiO xOr the planar graph after the SiNx insulating barrier etching;
Fig. 8 is the A-A sectional view of Fig. 7;
Fig. 9 is the plane graph of metal electrode heat dissipating layer after p electrode district top deposition, photoetching and the etching;
Figure 10 is the A-A sectional view of Fig. 9;
Figure 11 SiO xOr the planar graph after the SiNx passivation layer etching;
Figure 12 is for carrying out the cross section figure that obtains after the organized roughened to the sapphire exiting surface;
Mark among the figure:
The roughened surface of 1-Sapphire Substrate;
2-Sapphire Substrate;
3-n type resilient coating, i.e. n-GaN resilient coating;
4-insulating barrier;
5-n electrode layer;
6-n semiconductor layer, i.e. n +-GaN layer;
7-active layer;
8-p semiconductor layer, i.e. p-GaN layer;
9-transparent electrode layer;
10-p electrode layer;
11-external metallic radiating layer;
12-passivation layer.
Embodiment
The embodiment of the utility model: at this, be example, the chip structure and the manufacturing approach thereof of the utility model is described with " from the luminous GaN base blue light upside-down mounting array-type LED chip of sapphire surface ".
The chip structure of the utility model is: comprise substrate, n type semiconductor layer, active layer, p type semiconductor layer, electrode layer, insulating barrier, external metal level and passivation layer; The array LED chip is by a plurality of array element forming arrays, wherein all shared n type semiconductor layer 6 of adjacent array element; Said array element is that Sapphire Substrate 2 tops cover n type resilient coating 3, n type semiconductor layer 6, active layer 7, p type semiconductor layer 8, transparent electrode layer 9, p electrode layer 10 successively; Between adjacent two array elements is n electrode 5; And n electrode 5 is coated by insulating barrier 4 with p electrode layer 10; Above p electrode layer 10 windows that insulating barrier 4 coats, cover external metallic radiating layer 11.The exiting surface of Sapphire Substrate 2 is set to roughened surface 1.The material of external metallic radiating layer 11 comprises the Cu/Ti/Al/Ni/Au metal, adopts wherein two kinds and above metallic combination; And also has passivation layer 12 on external metallic radiating layer 11 surfaces.
The gallium source is TMGa (trimethyl gallium) in the utility model, and nitrogenous source is NH 3(ammonia), indium source are TMIn (trimethyl indium), and the silicon source is SiH 4(silane), magnesium source are Cp 2Mg (two luxuriant magnesium).
Below be the manufacturing approach of this embodiment blue light upside-down mounting array-type LED chip structure, its flow process meaning as shown in Figure 1, it may further comprise the steps:
Step 1, on Sapphire Substrate 2, adopt the MOCVD method n-GaN resilient coating 3 of the low-doped Si of growth earlier; The n type GaN semiconductor layer 6 of the highly doped Si of regrowth; Promptly use TMGa (trimethyl gallium), NH 3(ammonia) and silicon source SiH 4(silane) is at the n-GaN resilient coating 3 of 570 ℃ of low-doped Si that growth 2 μ m are thick down; The n type GaN semiconductor layer 6 of the highly doped Si of regrowth 20nm; Meaning as shown in Figure 2.
Step 2, employing MOCVD method growth active layer 7.The InGaN layer in a plurality of cycles of alternating growth and GaN layer form MQW-mqw layer.Detailed process is: the first, feed the thick InGaN of indium source TMIn (trimethyl indium) growth 3nm; The second, remove the indium source, feed silane (SiH 4) the thick n-GaN of growth 20nm; The 3rd, repetitive process first, second repeatedly, just grow the InGaN/GaN MQW.Meaning as shown in Figure 2.
Step 3, at MQW active layer 7 tops, adopt MOCVD method growing p-type semiconductor layer 8, promptly feed TMGa (trimethyl gallium), NH 3(ammonia) and Cp 2Mg (two luxuriant magnesium), the thick p type semiconductor layer 8 of growth 100nm;
Method with magnetron sputtering after step 4, process are cleaned deposits one deck ITO transparent conductive film as transparent electrode layer 9 on p type semiconductor layer 8, sputter-deposited Ag or Al metal form p electrode layer 10 on transparent electrode layer 9; The thickness of transparent electrode layer 9 is 500nm, and the thickness of p electrode layer 10 is 120nm.
Step 5, on the basis of step 4 resist coating, mask, etching is carried out in photoetching, exposes the n-GaN layer, for deposition n electrode layer 5 is prepared; Like Fig. 3, shown in Figure 4;
Step 6, with magnetron sputtering deposition Cu/Au (copper/gold), form the n electrode layer, and it carried out photoetching and etching; Form n electrode layer 5, promptly adopt magnetron sputtering deposition Cu/Au (copper/gold) metal, the thickness of plated metal is 800nm; And it is carried out photoetching and etching, form n electrode layer 5; Like Fig. 5 and shown in Figure 6.
Step 7, employing PECVD (plasma-enhanced chemical vapor deposition) growth SiOx or SiNx insulating barrier 4; And carry out photoetching and etching, expose the window of p electrode layer 10, for the external metallic radiating layer 11 that further deposits p electrode layer 10 is prepared; Simultaneously expose n electrode pad, connect for external circuit at the chip edge; Like Fig. 7, shown in Figure 8.
Step 8, on p electrode layer 10 with magnetron sputtering or electron-beam evaporation Cu/Au (copper/gold) metal, form external metallic radiating layer 11, this bed thickness 90-150 μ m, and carry out photoetching and etching forms metallic radiating layer and n electrode layer 5 external pad; Like Fig. 9, shown in Figure 10.
Step 9, remove photoresist, adopt PECVD growth SiOx or SiNx passivation layer 12, promptly form the thick SiO of 80nm 2Passivation layer; And carry out photoetching and etching, and expose p electrode pad and n electrode pad, connect for external circuit; Shown in figure 11.
Step 10, with chemico-mechanical polishing (CMP) equipment with the sapphire attenuate; Be about to Sapphire Substrate 2 and be thinned to 90 μ m～150 μ m by 350 μ m～450 μ m; And the method that adds ion etching with photoetching is carried out organized roughened to sapphire exiting surface; Form roughened surface, shown in figure 12.
Manufacturing approach based on above-mentioned steps can obtain a kind of upside-down mounting array-type LED chip, and this chip is compared with traditional led chip, both can increase light-emitting area, improves luminous efficiency, can be good at improving the heat radiation of chip again.
Based on above-mentioned exemplary construction and manufacturing approach thereof; Adjustment active layer structure (SQW like a plurality of materials forms composite quantum well) and material component (the adjustment doping content changes emission wavelength) can send out color of light multiple, and the utility model has also been contained this led chip category.
The above content of the utility model; Only provided a kind of embodiment that realizes the utility model; But chip structure in this scheme and the scheme and process conditions can change; This change does not break away from the thought and the scope of the utility model, and all changes clear to those skilled in the art oneself should be included in the described claim scope.

Claims (8)

1. high-power upside-down mounting array LED chip; Comprise substrate, n type semiconductor layer, active layer, p type semiconductor layer, electrode layer, insulating barrier, external metal level and passivation layer; It is characterized in that: the array LED chip is by a plurality of array element forming arrays, wherein all shared n type semiconductor layer of adjacent array element (6); Said array element is that Sapphire Substrate (2) top covers n type resilient coating (3), n type semiconductor layer (6), active layer (7), p type semiconductor layer (8), transparent electrode layer (9), p electrode layer (10) successively; Be n electrode (5) between adjacent two array elements; And n electrode (5) and p electrode layer (10) are coated by insulating barrier (4); P electrode layer (10) the window top that coats at insulating barrier (4) covers external metallic radiating layer (11), also has passivation layer (12) on external metallic radiating layer (11) surface.
2. high-power upside-down mounting array LED chip according to claim 1 is characterized in that: the exiting surface of Sapphire Substrate (2) is treated to thick ultraization surface (1).
3. high-power upside-down mounting array LED chip according to claim 1 is characterized in that: the n type semiconductor layer (6) of flip LED chips and p type semiconductor layer (8) are to be made up of GaN, GaAs or AlGaN semi-conducting material; Wherein the impurity that mixes of n type layer is the Si material, and the impurity that p type layer mixes is the Mg material.
4. high-power upside-down mounting array LED chip according to claim 1 is characterized in that: the active layer (7) of upside-down mounting array LED chip is the InGaN of individual layer, or the InGaN layer of multilayer and GaN layer, forms multiple quantum well layer.
5. according to claim 1,2 or 3 described high-power upside-down mounting array LED chips, it is characterized in that: the n type semiconductor layer (6) of all chip array unit is communicated with, and the shared therebetween n electrode (5) of adjacent two array elements.
6. according to claim 1,2 or 3 described high-power upside-down mounting array LED chips, it is characterized in that: p electrode layer (10) adopts metal A g or Al, and covers the transparent electrode layer (9) of each array element fully.
7. high-power upside-down mounting array LED chip according to claim 1 is characterized in that: insulating barrier (4) and passivation layer (12) are made up of SiOx, SiNx or SiOxNy insulating material.
8. high-power upside-down mounting array LED chip according to claim 1 is characterized in that: transparent electrode layer (9) adopts metallic film Ni/Au or tin indium oxide to make.
CN2011203990594U 2011-10-19 2011-10-19 Large-power inverse array LED (Light-Emitting Diode) chip Expired - Fee Related CN202332853U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112992964A (en) * 2020-04-09 2021-06-18 镭昱光电科技(苏州)有限公司 Light emitting diode structure and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112992964A (en) * 2020-04-09 2021-06-18 镭昱光电科技(苏州)有限公司 Light emitting diode structure and manufacturing method thereof

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120711

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