CN206992110U

CN206992110U - A kind of double-side LED chip

Info

Publication number: CN206992110U
Application number: CN201720832063.2U
Authority: CN
Inventors: 王峰
Original assignee: Suzhou Ruiermei Optoelectronic Technology Co Ltd
Current assignee: Suzhou Ruiermei Optoelectronic Technology Co Ltd
Priority date: 2017-07-11
Filing date: 2017-07-11
Publication date: 2018-02-09
Anticipated expiration: 2027-07-11

Abstract

The utility model discloses a kind of double-side LED chip, including：Transparent substrates with the first and second surfaces, two surfaces are by polishing or graphical treatment；First and second surface epitaxial growth the first and second chips epitaxial structure layers, the first chip epitaxial structure layer include the first p type semiconductor layer and the first n type semiconductor layer, and the second chip epitaxial structure layer includes the second p type semiconductor layer and the second n type semiconductor layer；P-type current-diffusion layer is provided with first chip epitaxial structure layer, first P-type electrode of small area is provided with p-type current-diffusion layer, one first N-type electrode is provided with the first n type semiconductor layer；Second P-type electrode of large area is provided with second p type semiconductor layer of the second chip epitaxial structure layer, one second N-type electrode is provided with the second n type semiconductor layer.By carrying out epitaxial light emission structure preparation to the upper and lower surface of transparent substrates piece, light extraction efficiency can be improved with double-side, change encapsulation mode and improve radiating.

Description

A kind of double-side LED chip

Technical field

A kind of LED chip is the utility model is related to, more particularly to a kind of double-side LED chip.

Background technology

In existing LED encapsulation technologies, typically by the chip formal dress that one side lights in heat-radiating substrate or radiating branch On frame, the luminous chip of one side is typically to carry out the making of PN junction structure in a face of Sapphire Substrate, then passes through electrode Make, the mode of metal lead wire is just attached on heat-radiating substrate, also had by way of upside-down mounting, by the electrode face-down bonding on chip Onto heat-radiating substrate.But sum it up, the light-emitting area of chip is single, light extraction efficiency is not high.

Chinese patent literature CN 204696145 discloses a kind of double-side LED chip, including substrate and positioned at lining Epitaxial structure on bottom, the epitaxial structure include N type semiconductor layers on the substrate, in N type semiconductor layers And it is separated from each other the first multiple quantum well light emitting layer of setting and the second multiple quantum well light emitting layer and is located at the first Multiple-quantum respectively Trap luminescent layer and the first p type semiconductor layer and the second p type semiconductor layer on the second multiple quantum well light emitting layer, the N types half N electrodes are provided with conductor layer, is respectively arranged with the first P type semiconductor layers and the 2nd P type semiconductor layers One P electrodes and the 2nd P electrodes.By forming the luminous individuals of two LED being separated from each other on the same substrate, pass through one Group chip realizes LED two-sided luminous effects, this kind of method from the strict sense for one side light, although can be from one Determine to improve luminous efficiency in degree, but radiating effect is poor, service life is low.

Utility model content

It is for technical problem existing for above-mentioned prior art, the purpose of the utility model：Provide a kind of double-side LED Chip, by carrying out epitaxial light emission structure preparation to the upper and lower surface of transparent substrates piece, change traditional one side ray structure pattern, Its light extraction efficiency is doubled, substantially increase brightness.The mode for being simultaneously again combined formal dress and upside-down mounting, optimizes envelope Assembling structure, while light extraction efficiency is improved, the radiating of chip is improved again.

The technical solution of the utility model is：

A kind of double-side LED chip, including：

One transparent substrates, are made of clear material, and have a first surface and relative with the first surface one second Surface, the first surface and second surface are by polishing or graphical treatment；

One first chip epitaxial structure layer, is epitaxially grown in first surface；

One second chip epitaxial structure layer, is epitaxially grown in second surface；

The first chip epitaxial structure layer and the second chip epitaxial structure layer are symmetrical, outside first chip Prolonging structure sheaf includes the first p type semiconductor layer and the first n type semiconductor layer, and the second chip epitaxial structure layer includes the 2nd P Type semiconductor layer and the second n type semiconductor layer；

P-type current-diffusion layer is provided with the first chip epitaxial structure layer, is provided with the p-type current-diffusion layer One the first P-type electrode of small area, one first N-type electrode is provided with first n type semiconductor layer；

Second P-type electrode of large area, institute are provided with second p type semiconductor layer of the second chip epitaxial structure layer State and one second N-type electrode is provided with the second n type semiconductor layer.

Preferably, the transparent substrates are synthesized by the one or more in sapphire, gallium nitride, aluminium nitride.

Preferably, the thickness of the transparent substrates is 100~650 microns.

Preferably, the p-type current-diffusion layer is by indium tin oxide, fluorine tin-oxide, barium tin oxide or graphene One or more kinds of synthesis.

The invention also discloses a kind of encapsulating structure of double-side LED chip, including double-side LED chip and Package substrate, the package substrate include circuit layer, and the circuit layer is being provided with the second positive electrode, the second negative electrode, first just Electrode and the first negative electrode, first positive electrode and the first negative electrode are separately positioned on the second positive electrode and the second negative electrode Both sides, second P-type electrode are welded in the second positive electrode, and second N-type electrode is welded in the second negative electrode, and described first P-type electrode connects the first positive electrode and the first negative electrode, the double-side by metal lead wire respectively with the first N-type electrode The periphery of LED chip is by silica gel or epoxy resin wrapping and encapsulating in package substrate.

Preferably, insulating barrier and heat-radiating substrate are provided with below the circuit layer of the package substrate.

Compared with prior art, the utility model has the advantages that：

By carrying out epitaxial light emission structure preparation to the upper and lower surface of transparent substrates piece, change traditional one side ray structure mould Formula, its light extraction efficiency is doubled, substantially increase brightness.The mode for being simultaneously again combined formal dress and upside-down mounting, optimization Encapsulating structure, while light extraction efficiency is improved, improves the radiating of chip again.Encapsulating structure is reasonable in design, can answer extensively For the energy-conservation field of Environment Protection such as semiconducting solid illumination.

Brief description of the drawings

Below in conjunction with the accompanying drawings and embodiment is further described to the utility model：

Fig. 1 is chip epitaxial structure schematic diagram of the present utility model；

Fig. 2 is the utility model N-type electrode window region structural representation；

Fig. 3 is the utility model chip electrode structural representation；

Fig. 4 is chip-packaging structure schematic diagram.

Embodiment

To make the purpose of this utility model, technical scheme and advantage of greater clarity, with reference to embodiment And referring to the drawings, the utility model is further described.It should be understood that these descriptions are merely illustrative, and do not really want Limit the scope of the utility model.In addition, in the following description, the description to known features and technology is eliminated, to avoid not Necessarily obscure concept of the present utility model.

Embodiment：

A kind of preparation method of double-side LED chip, comprises the following steps：

（1）It is used as from a kind of or above material multiple elements design body in sapphire, gallium nitride, aluminium nitride material outer The transparent substrates 1 of epitaxial growth.The thickness range of transparent substrates 1 is selected in 100~650 microns.The upper and lower surface of transparent substrates 1 is carried out Polishing is graphical.

（2）Pass through metal-organic chemical vapor deposition equipment（MOCVD）Method it is outer successively in the first surface of transparent substrates 1 Epitaxial growth the first n type semiconductor layer 2 and the first p type semiconductor layer 3, in the N-type semiconductor of second surface successively epitaxial growth second The p type semiconductor layer 4 of layer 5 and second, as shown in Figure 1.

（3）Using semiconductor process techniques such as photoetching, development, etchings successively in the first p type semiconductor layer 3 and the first N-type The surface etch of semiconductor layer 2, until the first N-type electrode window region 6 is etched, successively in the second p type semiconductor layer 4 and the 2nd N The surface etch of type semiconductor layer 5, until etching the second N-type electrode window region 7, as shown in Figure 2.First N-type electrode window region 6 The corner of chip is arranged on the second N-type electrode window region 7, can be arranged symmetrically.

（4）With transparent conductive material in the first P-type semiconductor layer surface deposition p-type current-diffusion layer 8；Transparent conductive material For the one or more synthesis in the conductive transparent materials such as indium tin oxide, fluorine tin-oxide, barium tin oxide or graphene Material.It is uniform that p-type current-diffusion layer 8 is mainly used in electric current distribution in the first p type semiconductor layer.

（5）First P-type electrode of small area 9 is prepared on p-type current-diffusion layer 8, is made in the first N-type electrode window region 6 Standby first N-type electrode 10, second P-type electrode of large area 11 is prepared in the second P-type semiconductor layer surface, in the second N-type electrode Window region prepares the second N-type electrode 12.The area of first P-type electrode 9 is smaller, can be with the first N-type electrode 10, the second N-type electricity The sizableness of pole 12, the area of the P-type electrode 9 of the second P-type electrode 11 to the first is big, can be with the phase of the second p type semiconductor layer 4 When.

The material of P-type electrode and N-type electrode is one in the metal materials such as chromium, platinum, gold, nickel, titanium, copper, indium, tin, lead, silver Kind or a variety of synthetics.With the process of alloy, each electrode district metal interlevel is set to form Ohmic contact.As shown in Figure 3.

Next double-side LED chip is encapsulated on package substrate.

As shown in figure 4, package substrate 20 includes circuit layer 13, the lower section of circuit layer 13 is provided with insulating barrier 19 and heat-radiating substrate 17.Circuit layer 13 is provided with the second positive electrode 21, the second negative electrode 22, the first positive electrode 23 and the first negative electrode 24, and first just The negative electrode 24 of electrode 23 and first is separately positioned on the both sides of the second positive electrode 21 and the second negative electrode 22.

Second P-type electrode 11 is welded in the second positive electrode 21, the second N-type electrode 12 is welded in the second negative electrode 22, First P-type electrode 9 and the first N-type electrode 10 connect the first positive electrode 23 and the first negative electrode 24 by metal lead wire 16 respectively. It is welded as eutectic alloy to weld, the solder 18 in eutectic alloy technique is gold, one or more synthetics in indium, lead, silver, tin

By the periphery of double-side LED chip by silica gel or the wrapping and encapsulating of epoxy resin 30 in package substrate 20.

LED chip prepared by the utility model method, using front-back two-sided luminous, its envelope higher than traditional die brightness Assembling structure is reasonable in design, good heat dissipation effect, is adapted to large-scale mass production, can be widely applied to the energy-conservations such as semiconducting solid illumination Field of Environment Protection.

It should be appreciated that above-mentioned embodiment of the present utility model is used only for exemplary illustration or explains this reality With new principle, without forming to limitation of the present utility model.Therefore, without departing from spirit and scope of the present utility model In the case of any modification, equivalent substitution and improvements done etc., should be included within the scope of protection of the utility model.In addition, The appended claims for the utility model are intended to fall into scope and border or this scope and border Whole in equivalents changes and modifications example.

Claims

A kind of 1. double-side LED chip, it is characterised in that including：

One transparent substrates, are made of clear material, and have a first surface and a second surface relative with the first surface, The first surface and second surface are by polishing or graphical treatment；

One first chip epitaxial structure layer, is epitaxially grown in first surface；

One second chip epitaxial structure layer, is epitaxially grown in second surface；

The first chip epitaxial structure layer and the second chip epitaxial structure layer are symmetrical, the first chip epitaxy junction Structure layer includes the first p type semiconductor layer and the first n type semiconductor layer, and the second chip epitaxial structure layer includes the second p-type half Conductor layer and the second n type semiconductor layer；

P-type current-diffusion layer is provided with the first chip epitaxial structure layer, it is small to be provided with one on the p-type current-diffusion layer The P-type electrode of area first, one first N-type electrode is provided with first n type semiconductor layer；

It is provided with second P-type electrode of large area on second p type semiconductor layer of the second chip epitaxial structure layer, described One second N-type electrode is provided with two n type semiconductor layers.
2. double-side LED chip according to claim 1, it is characterised in that the transparent substrates are by sapphire, nitridation One or more kinds of synthesis in gallium, aluminium nitride.
3. double-side LED chip according to claim 1, it is characterised in that the thickness of the transparent substrates be 100~ 650 microns.
4. double-side LED chip according to claim 1, it is characterised in that the p-type current-diffusion layer is by indium tin oxygen One or more kinds of synthesis in compound, fluorine tin-oxide, barium tin oxide or graphene.
5. a kind of encapsulating structure of double-side LED chip, it is characterised in that including double described in claim any one of 1-3 Face emitting LED chip and package substrate, the package substrate include circuit layer, and the circuit layer is provided with the second positive electrode, Two negative electrodes, the first positive electrode and the first negative electrode, first positive electrode and the first negative electrode are separately positioned on the second positive electricity Pole and the both sides of the second negative electrode, second P-type electrode are welded in the second positive electrode, and second N-type electrode is welded in Two negative electrodes, first P-type electrode connect the first positive electrode and the first negative electricity by metal lead wire respectively with the first N-type electrode Pole, the double-side LED chip periphery by silica gel or epoxy resin wrapping and encapsulating in package substrate.
6. the encapsulating structure of double-side LED chip according to claim 5, it is characterised in that the package substrate Insulating barrier and heat-radiating substrate are provided with below circuit layer.