CN102214746B - Method for manufacturing gallium nitride-based power LED (Light-Emitting Diode) chip - Google Patents
Method for manufacturing gallium nitride-based power LED (Light-Emitting Diode) chip Download PDFInfo
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Abstract
The invention relates to a method for manufacturing a gallium nitride-based power LED (Light-Emitting Diode) chip. The method comprises the following steps of: manufacturing a P-type ohmic contact and an AL (Aluminum) layer reflecting mirror on an epitaxial layer respectively by adopting technologies such as etching, vacuum evaporation and the like, punching a hole in a naked N-type epitaxial layer region by adopting a laser punching technology, manufacturing an ohmic contact of an N-type region, depositing a metal material in the hole and protecting the N-type region by using an insulating material to realize isolation between the N-type region and a P-type region; and thinning an epitaxial wafer, making the punched hole serve as a through hole for communicating a sapphire substrate with the N-type region and manufacturing a bonding wire electrode on the surface of the substrate. In the method, a light-emitting PN-junction region is formed close to a heat-conducting material, so that the problems of heat conducting and heat dissipating existing in the conventional LED chip with a formal structure are solved, and the problems such as circuit corresponding of the conventional inverted structure and the like do not need to be considered; and the method has the characteristics of convenience for using, saving in cost and high yield, and is suitable for manufacturing a gallium nitride-based power LED chip.
Description
Technical field
The present invention relates to a kind of gallium nitrate based power-type LED chip manufacture method, belong to semiconductor lighting level power-type LED chip fabrication techniques field.
Background technology
Light-emitting diode (LED) is a kind ofly to utilize the charge carrier compound tense to release energy to form luminous semiconductor device, have advantages such as efficient height, life-span length, energy-conserving and environment-protective.In recent years, be that master's high-brightness LED development is very swift and violent with gallium nitride (GaN) sill, luminous efficiency is greatly improved.Be widely used at present industry and civilian various aspects such as outdoor display screen, traffic lights, and be expected to replace traditional electricity-saving lamp, incandescent lamp product etc. and be applied to the general illumination field.To gallium nitride based LED be applied to the general illumination field; Must improve electric current through led chip luminous zone (PN junction) significantly to improve the luminous intensity of led chip, then, led chip is under big current drives; Not only improve the light efficiency of chip; Also transform into a large amount of heat energy simultaneously, if radiating treatment is bad the luminous efficiency of led chip and useful life will significantly be reduced, the advantage of led light source disappears.Therefore, guarantee the led light source steady operation, its basic way is improved its heat radiation exactly.
Traditional G aN based power type LED chip mainly is divided into formal dress and inverted structure:
The led chip of positive assembling structure has an extension when encapsulation luminescent layer up, P, N electrode are communicated with external circuit through bonding wire respectively, and be easy to use.In positive assembling structure, the heat of led chip luminous zone mainly conducts through sapphire substrate, and thermally conductive pathways is longer; And sapphire thermal conductivity coefficient is very poor; Therefore, the led chip thermal resistance of positive assembling structure is big, and heat is collected in luminous PN junction district; The luminous efficiency and the life-span of chip are severely limited; Therefore the led chip of positive assembling structure all can not be optimum at aspects such as luminous power, efficient and useful lifes, but because easy to use, cost is low, present most of GaN base LED chips still adopt positive assembling structure.
Traditional inverted structure chip at first forms two metal salient points respectively on led chip P, N electrode; When using, encapsulation at first on an insulated substrate, makes independently P, N control circuit; Then with the metal salient point on the led chip electrode and the P on the insulated substrate, N circuit respectively mapping get up, form on the chip electrode being connected of P, N circuit on the metal salient point and insulated substrate with the mode of heating eutectic weldering again.Its advantage be the heat of luminous pn knot can directly conduct to thermal conductivity coefficient higher like insulated substrates such as silicon, potteries, radiating effect is better.Yet traditional inverted structure must make the metal salient point and the P on the insulated substrate, the accurate mapping of N circuit on the led chip electrode when encapsulation is used, and this has huge difficulty undoubtedly to the encapsulation use; And, the eutectic weldering of after accurate mapping, heating again, eutectic material must melt so that metal salient point links to each other with substrate circuit, stretches but expansion also can appear in the fusing of eutectic material, possibly make entire device scrap the P on the substrate, N circuit turn-on.
Summary of the invention
The objective of the invention is; A kind of novel GaN based power type LED chip manufacture method is provided; Through improvement, make chip structure of the present invention not only have the positive assembling structure led chip advantage easy to use of tradition, and can improve the radiating efficiency of chip significantly chip manufacture method; Effectively solve the existing heat radiation difficult problem of traditional GaN base blue-light LED chip structure, make it can be applied to make the GaN based power type LED chip under the big current work condition.
Technical scheme of the present invention is: a kind of GaN based power type LED chip manufacture method of the present invention is following:
1, get a slice and grow on the sapphire substrate through the MOCVD method epitaxial wafer of epitaxial layer of gallium nitride is arranged, press means that the chip electrode structure that is designed adopts dry etching selectively etching remove the P type layer in the epitaxial loayer, expose N type epitaxial loayer;
2, the P of epitaxial wafer type epi region utilize vacuum coating, figure etching, method for annealing form the ITO diffusion layer and with the ohmic contact of P type epitaxial loayer, on the ITO diffusion layer, make one deck AL metal level then, form front-surface mirror;
3, the utilization laser drilling punches in exposed N type epitaxial region, and hole depth is between 80-100um, and the diameter in hole is between 20-50um;
4, utilize figure etching technique, vacuum coating technology to make the Ohm contact electrode in Cr metal and N type district in exposed N type epitaxial region; The Cr metal material can be precipitated to the medial surface of through hole in plated film, form the current path of material in N type district's metal ohmic contact and the hole;
5, utilize the figure etching technique to make an insulating protective layer in the N type epi region surface coverage of the electrode of making N type ohmic contact, the thickness of protective layer is between 10-30um;
6, epitaxial wafer is thinned between the 70-80um from the sapphire real estate, thereby makes the hole of being beaten in the present invention the 3rd step become the through hole of connection substrate surface and N type Ohm contact electrode;
7, utilize the figure etching technique to make one deck has white space in the through hole photoresist protective layer at substrate surface, the white space diameter is between 100-200um, and through hole is positioned at white space inscribe edge;
8, utilize vacuum coating technology at the surperficial vapor deposition one deck respectively of photoresist protective layer Ti; Vapor deposition layer of Au again; Metal material can be precipitated to the medial surface of through hole in plated film, strengthen the metal thickness in the through hole, forms the current path of substrate surface and N type Ohm contact electrode;
9, remove substrate surface photoresist protective layer, its surperficial metal material will be removed in the lump, form the bonding wire electrode but the metal material of white space will be retained in substrate surface;
10, accomplish above operation after, epitaxial wafer is divided into single led chip, the real estate that the bonding wire electrode will be arranged has the luminescent layer of AL speculum downward up, promptly forms and can directly apply to the encapsulated LED chip.
In the said method, make the N type epi region surface coverage of N type Ohm contact electrode in the 5th step and an insulating protective layer, the thickness of this insulating protective layer is between 10-30um, and material can be used the adhesive glue of ultraviolet light polymerization; The method that can adopt rotation to apply back curing is made.
Accomplish the through hole that is communicated with substrate surface and N type Ohm contact electrode in the 6th step, the metal material filler of conductivity connection effect has been arranged in this through hole; Power-type LED chip of the present invention will have one of epitaxial loayer in use and face down, and the sapphire substrate surface with bonding wire electrode makes progress, and utilize the interior metal material of through hole to realize the current lead-through in external circuit and N type district.
The present invention's beneficial effect compared with prior art is:
Power-type LED chip structure of the present invention utilizes the metal material in the through hole directly the N district Ohm contact electrode of LED to be linked to each other with the bonding wire electrode of substrate surface in the chip manufacturing process; And utilize insulating protective layer with chip P, N electrode isolation;, encapsulation only needs when using in support the led chip upside-down mounting; The metal A L layer that makes the luminescent layer bottom play reflection and thermolysis is starched with the silver in the support and is directly contacted; Compare traditional flip LED chips,, further improved the heat conduction and the radiating efficiency of chip owing to need not to adopt the insulated substrate that is manufactured with circuit; Simultaneously, owing to need not to adopt the insulated substrate that is manufactured with circuit, practiced thrift packaging cost.The P of the led chip among the present invention, N electrode are isolated through insulating protective layer and through hole; So chip need not to consider in the encapsulation use to weld problem with corresponding, the eutectic of external circuit; Easy to use, improved the applicability of chip and the rate of finished products of encapsulating products.
Compare with the positive assembling structure led chip of tradition; The present invention has not only solved the existing heat conduction of traditional packed LED chip, heat dissipation problem; And P district electric current can be directly imports through backbone metal, when encapsulation, only need carry out the bonding wire of N region electrode, reduced half the bonding wire quantity.On the one hand, led chip structure of the present invention near Heat Conduction Material, has solved the existing heat conduction of traditional positive assembling structure led chip, heat dissipation problem with luminous PN junction district; Need not to consider the problems such as circuit correspondence of traditional inverted structure simultaneously; Have easy to usely, practice thrift cost, the characteristics that rate of finished products is high; On the other hand; Since the N type Ohm contact electrode of led chip structure of the present invention can be uniformly distributed in led chip around; Needn't must be distributed in the chip both sides as P, N electrode in the led chip of traditional structure, solve electric current, luminous, the dispel the heat uneven problem of traditional led chip in luminescence process.
The present invention is applicable to the preparation of gallium nitrate based power-type LED chip.
Description of drawings
Fig. 1 is the making flow chart in the embodiment of the invention;
Fig. 2 is the gallium nitrate based power-type LED chip structure sketch map after accomplishing in the embodiment of the invention;
Picture in picture number expression: the 1st, base stage bonding wire electrode and through hole; The 2nd, the sapphire base stage; The 3rd, N type epitaxial region; The 4th, insulating protective layer; The 5th, AL layer speculum; The 6th, the ITO diffusion layer; The 7th, P type epitaxial loayer; The 8th, luminous PN junction.
Embodiment
Embodiment of the present invention is that example is described in detail with the preparation process of white light power-type LED chip and green glow power-type LED chip respectively, with reference to figure 1, Fig. 2.
Specific embodiment 1:
1, at first get a slice and grow on the sapphire substrate through the MOCVD method and the blue streak LED of epitaxial layer of gallium nitride epitaxial wafer is arranged, the about 455nm of emission wavelength, the unit chip size 1mm of design
2Press means that the chip electrode structure that designed adopts dry etching selectively etching remove the P type layer in the epitaxial loayer, expose N type epitaxial region (3);
2, the P of epitaxial wafer type epi region utilize vacuum coating, figure etching, method for annealing form ITO diffusion layer (6) and with the ohmic contact of P type epitaxial loayer (7); Go up at ITO diffusion layer (6) then and make one deck AL metal level (5), form front-surface mirror;
3, the utilization laser drilling punches in exposed N type epitaxial region (3), and hole depth is between 80-100um, and the diameter in hole is between 20-50um;
4, utilize figure etching technique, vacuum coating technology to make the Ohm contact electrode in Cr metal and N type district in exposed N type epitaxial region (3).The Cr metal material can be precipitated to the medial surface of through hole in plated film, form the current path of material in N type district's metal ohmic contact and the hole;
5, utilize the figure etching technique to make an insulating protective layer in the N type epi region surface coverage of the electrode of making N type ohmic contact, the thickness of protective layer is between 10-30 um;
6, epitaxial wafer is thinned between the 70-80um from the sapphire real estate, thereby makes the hole of being beaten in the present invention the 3rd step become the through hole of connection substrate surface and N type Ohm contact electrode;
7, utilize the figure etching technique to make one deck has white space in the through hole photoresist protective layer at substrate surface, the white space diameter is between 100-200um, and through hole is positioned at white space inscribe edge;
8, utilize vacuum coating technology at the surperficial vapor deposition one deck respectively of photoresist protective layer Ti; Vapor deposition layer of Au again; Metal material can be precipitated to the medial surface of through hole in plated film, strengthen the metal thickness in the through hole, forms the current path of substrate surface and N type Ohm contact electrode;
9, remove substrate surface photoresist protective layer, its surperficial metal material will be removed in the lump, form the bonding wire electrode but the metal material of white space will be retained in substrate surface;
10, accomplish above operation after, epitaxial wafer is divided into single led chip, the real estate that the bonding wire electrode will be arranged has the luminescent layer of AL speculum downward up, promptly forms the white light power-type LED chip that can directly apply to semiconductor lighting.
Specific embodiment 2:
1, getting a slice grows on the sapphire substrate through the MOCVD method and the green glow epitaxial wafer of epitaxial layer of gallium nitride is arranged, the about 525nm of wavelength, the unit chip size 1mm of design
2, press means that the chip electrode structure that designed adopts dry etching selectively etching remove the P type layer in the epitaxial loayer, expose N type epitaxial region (3);
2, the P of epitaxial wafer type epi region utilize vacuum coating, figure etching, method for annealing form ITO diffusion layer (6) and with the ohmic contact of P type epitaxial loayer (7); Go up at ITO diffusion layer (6) then and make one deck AL metal level (5), form front-surface mirror;
3, the utilization laser drilling punches in exposed N type epitaxial region (3), and hole depth is between 80-100um, and the diameter in hole is between 20-50um;
4, utilize figure etching technique, vacuum coating technology to make the Ohm contact electrode in Cr metal and N type district in exposed N type epitaxial region (3).The Cr metal material can be precipitated to the medial surface of through hole in plated film; Form the current path of material in N type district's metal ohmic contact and the hole; In order to strengthen the metal thickness in through hole, after having made the Cr plated film, in through hole, fill silver slurry electric conducting material again, carry out the curing of silver slurry then.；
5, utilize the figure etching technique to make an insulating protective layer in the N type epi region surface coverage of the electrode of making N type ohmic contact, the thickness of protective layer is between 10-30 um;
6, epitaxial wafer is thinned between the 70-80um from the sapphire real estate, thereby makes the hole of being beaten in the present invention the 3rd step become the through hole of connection substrate surface and N type Ohm contact electrode;
7, utilize the figure etching technique to make one deck has white space in the through hole photoresist protective layer at substrate surface, the white space diameter is between 100-200um, and through hole is positioned at white space inscribe edge;
8, utilize vacuum coating technology on photoresist protective layer surface vapor deposition one deck Ti respectively, vapor deposition layer of Au again, metal material can be precipitated in plated film in the through hole, forms the current path of substrate surface and N type Ohm contact electrode;
9, remove substrate surface photoresist protective layer, its surperficial metal material will be removed in the lump, form the bonding wire electrode but the metal material of white space will be retained in substrate surface;
10, accomplish above operation after, epitaxial wafer is divided into single led chip, the real estate that the bonding wire electrode will be arranged has the luminescent layer of AL speculum downward up, promptly forms the green glow power-type LED chip that can directly apply to encapsulation.
Claims (5)
1. gallium nitrate based power-type LED chip manufacture method is characterized in that said method is:
(1) get a slice and grow on sapphire substrate through the MOCVD method epitaxial wafer of epitaxial layer of gallium nitride is arranged, press means that the chip electrode structure that is designed adopts dry etching selectively etching remove the P type layer in the epitaxial loayer, expose N type epitaxial loayer;
(2) the P of epitaxial wafer type epi region utilize vacuum coating, figure etching, method for annealing form the ITO diffusion layer and with the ohmic contact of P type epitaxial loayer, on the ITO diffusion layer, make one deck Al metal level then, form front-surface mirror;
(3) the utilization laser drilling punches in exposed N type epitaxial region, and hole depth is between 80-100 μ m, and the diameter in hole is between 20-50 μ m;
(4) utilize figure etching technique, vacuum coating technology to make the Ohm contact electrode in Cr metal and N type district in exposed N type epitaxial region; The Cr metal material can be precipitated to the medial surface of through hole in plated film, form the current path of material in N type district's metal ohmic contact and the hole;
(5) utilize the figure etching technique an insulating protective layer in the N type epi region surface coverage of the electrode of making N type ohmic contact;
(6) epitaxial wafer is thinned between the 70-80 μ m from the sapphire substrate face, thereby makes the hole beaten in (3) step become the through hole of connection substrate surface and N type Ohm contact electrode;
(7) utilize the figure etching technique to make one deck has white space in the through hole photoresist protective layer at substrate surface, the white space diameter is between 100-200 μ m, and through hole is positioned at white space inscribe edge;
(8) utilize vacuum coating technology at the surperficial vapor deposition one deck of photoresist protective layer Ti; Vapor deposition layer of Au again; Metal material can be precipitated to the medial surface of through hole in plated film, strengthen the metal thickness in the through hole, forms the current path of substrate surface and N type Ohm contact electrode;
(9) remove substrate surface photoresist protective layer, its surperficial metal material will be removed in the lump, form the bonding wire electrode but the metal material of white space will be retained in substrate surface;
(10) accomplish above operation after, epitaxial wafer is divided into single led chip, the real estate that the bonding wire electrode will be arranged has the luminescent layer of Al speculum downward up, promptly forms and can directly apply to the encapsulated LED chip.
2. a kind of gallium nitrate based power-type LED chip manufacture method according to claim 1; It is characterized in that; Saidly an insulating protective layer in the N type epi region surface coverage of making N type Ohm contact electrode; The thickness of this insulating protective layer is between 10-30 μ m, and material is a ultraviolet light curing adhesive.
3. a kind of gallium nitrate based power-type LED chip manufacture method according to claim 1 is characterized in that, the through hole of said connection substrate surface and N type Ohm contact electrode has had the metal material of conductive communication effect in the said through hole.
4. a kind of gallium nitrate based power-type LED chip manufacture method according to claim 1; It is characterized in that; Said chip will have one of epitaxial loayer in use and face down; Sapphire substrate surface with bonding wire electrode makes progress, and utilizes the interior metal material of through hole to realize the current lead-through in external circuit and N type district.
5. a kind of gallium nitrate based power-type LED chip manufacture method according to claim 1; It is characterized in that; The inner metal charge that adopts of the through hole of said connection substrate surface and N type Ohm contact electrode, thereby the conduction and the heat conductivility of the interior metal material of reinforcement through hole.
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| CN104409597A (en) * | 2014-11-14 | 2015-03-11 | 无锡科思电子科技有限公司 | Electrode manufacturing method in red LED (Light Emitting Diode) chip manufacturing process |
| CN105702828A (en) * | 2016-04-07 | 2016-06-22 | 厦门乾照光电股份有限公司 | Fabrication process of composite transparent conductive layer |
| CN108389938B (en) * | 2017-02-03 | 2021-01-26 | 山东浪潮华光光电子股份有限公司 | Non-photoetching preparation method of GaAs-based LED chip |
| CN117976793A (en) * | 2024-03-29 | 2024-05-03 | 江西兆驰半导体有限公司 | Preparation method of ITO composite film and LED flip chip |
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| CN1618133A (en) * | 2001-11-19 | 2005-05-18 | 三洋电机株式会社 | Compound semiconductor light emitting device and its producing method |
| CN101473457A (en) * | 2006-07-05 | 2009-07-01 | 松下电器产业株式会社 | Semiconductor light emitting element and method for fabricating the same |
| CN101599523A (en) * | 2009-06-01 | 2009-12-09 | 广东昭信光电科技有限公司 | The light emitting diode (LED) chip with vertical structure and the manufacture method thereof that adopt conducting polymer to shift |
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| JP2006310641A (en) * | 2005-04-28 | 2006-11-09 | Kyocera Kinseki Corp | Semiconductor optical element |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1618133A (en) * | 2001-11-19 | 2005-05-18 | 三洋电机株式会社 | Compound semiconductor light emitting device and its producing method |
| CN101473457A (en) * | 2006-07-05 | 2009-07-01 | 松下电器产业株式会社 | Semiconductor light emitting element and method for fabricating the same |
| CN101599523A (en) * | 2009-06-01 | 2009-12-09 | 广东昭信光电科技有限公司 | The light emitting diode (LED) chip with vertical structure and the manufacture method thereof that adopt conducting polymer to shift |
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