CN109920904B - Heat radiation structure of high-power GaN-based LED and processing technology - Google Patents
Heat radiation structure of high-power GaN-based LED and processing technology Download PDFInfo
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052802 copper Inorganic materials 0.000 claims abstract description 43
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Abstract
The invention provides a heat radiation structure of a high-power GaN-based LED and a processing technology, wherein the structure comprises an LED chip unit, conductive adhesive, a graphene film, a copper-clad ceramic substrate, heat-conducting silicone grease and a heat radiator, and the LED chip unit is connected with a copper layer on the copper-clad ceramic substrate in a flip-chip manner. The graphene grows on the designed graphical DBC substrate by adopting a chemical vapor deposition method and is used as a heat dissipation layer contacted with the side surface of the chip, and on the premise of not affecting the heat conduction of the upper surface and the lower surface of the chip, the heat of the side surface around the chip is rapidly and transversely transferred to the graphene heat dissipation layer and then to the substrate by utilizing the transverse high heat conductivity of the graphene, so that a new heat conduction path is increased; the heat conduction path is shortened by adopting the flip-chip interconnection mode, the heat radiation performance of the whole structure is enhanced, and the effective heat radiation of the local high heat flux hot spot is realized, so that the highest temperature of the LED device is reduced, and the luminous efficiency and the service life of the GaN-based LED are improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a heat dissipation structure of a high-power GaN-based LED and a processing technology.
Background
The LED is widely applied to the field of new energy automobiles, and the LED is very huge in market due to the fact that the LED is used in the automobile and comprises a third brake lamp, a left tail lamp, a right tail lamp, a direction lamp, an instrument panel, an indication lamp of sound and the like. In recent years, materials and structures of LEDs have been greatly developed. At present, the luminous efficiency of the GaN-based LED can reach 231lm/W, and if the GaN-based LED has the same luminous intensity, the GaN-based LED has more remarkable advantages than the traditional LED device, and can achieve a good energy-saving effect. Therefore, the GaN-based LED device plays an important role in the field of new energy automobiles.
High power LEDs generally suffer from thermal management problems, and high heat can cause significant damage to the efficiency and lifetime of the device. In the use process of the high-power LED, if heat cannot be timely dissipated, the junction temperature of a PN junction is increased, the dominant wavelength or lambdap of the LED can drift towards a long wavelength, the luminous color is influenced, and the initial brightness is also reduced. Too high a temperature can rapidly reduce the luminous efficiency of the LED, producing significant light decay. And too high a temperature can cause the encapsulant of the LED to transition to a rubbery state and the coefficient of thermal expansion to rise, resulting in open circuit and failure of the LED. Due to the wide application of LEDs in automobiles, the problems in safety are most likely to be caused by the negative effects caused by the combination of the heat generated by the LEDs.
In order to ensure reliable operation of high power LEDs, it is necessary to address the heat dissipation problem. The traditional heat dissipation structure comprises a silicon-based chip flip structure, a metal circuit board structure and a micro-pumping structure, but has certain defects, such as the silicon-based chip, and the heat conduction performance of the silicon chip is limited; the PCB of the metal circuit board structure has poor heat conduction performance; the micro-pumping structure is too complex to be suitable for all devices. Therefore, the research of the novel heat dissipation mode has very important significance.
Disclosure of Invention
The invention aims to provide a novel heat radiation structure of a high-power GaN-based LED, and a graphene film is grown on a copper-clad ceramic substrate by a chemical vapor deposition method according to a designed pattern structure, so that the patterned copper-clad ceramic substrate based on graphene is obtained, the pattern position corresponds to the mounting position of a chip, the chip is just embedded into the designed pattern, the periphery of the LED chip except the front surface and the back surface is contacted with the graphene film, a heat radiation path is increased, and the whole heat radiation capacity of the LED is improved.
In order to achieve the above purpose, the present invention adopts the following technical scheme.
The high-power GaN-based LED radiating structure comprises an LED chip unit, conductive glue, a graphene film, a copper-clad ceramic substrate, heat conduction silicone grease and a radiator, wherein the copper-clad ceramic substrate is provided with an upper copper layer and a lower copper layer, the LED chip unit is connected with the upper copper layer of the copper-clad ceramic substrate in a flip-chip mode, the lower copper layer of the copper-clad ceramic substrate is connected with the radiator through the heat conduction silicone grease, a pattern groove for accommodating the LED chip unit is formed in the upper copper layer of the copper-clad ceramic substrate, the patterned graphene film is manufactured on the surface of the upper copper layer, the LED chip unit is flip-chip in the pattern groove, the front surface of the LED chip unit is connected with the upper copper layer through the conductive glue, the periphery of the LED chip unit is contacted with the graphene film on the upper copper layer, and the LED chip unit is connected through a circuit in the copper-clad ceramic substrate.
Further, the conductive paste is a graphene powder filled epoxy conductive paste.
Further, the thickness of the graphene film is 18-20 mu m.
Further, the thickness of the conductive paste covering the pattern grooves was 10.+ -. 0.5. Mu.m.
Further, the LED chip unit comprises an n-type GaN layer, a GaN-based quantum well layer and a p-type GaN layer which are sequentially laminated on the front surface of the sapphire substrate, wherein a p-type electrode is manufactured on the surface of the p-type GaN layer, and an n-type electrode is further manufactured on the surface of the n-type GaN layer.
Further, the radiator is fin-shaped and made of metal aluminum.
The processing technology of the heat radiation structure of the high-power GaN-based LED comprises the following steps:
step 1, designing a plurality of pattern grooves matched with the shapes and the sizes of the LED chip units on the mounting position of the LED chip units on the upper copper layer of the copper-clad ceramic substrate, and growing a graphene film on the whole upper copper layer by adopting a chemical vapor deposition method; drawing polymethyl methacrylate solution on the surface of a graphene film by adopting a printing technology at the positions corresponding to the pattern grooves, dripping polydimethylsiloxane liquid on the surface of the graphene film on which pattern drawing is completed, covering all the positions where polymethyl methacrylate is coated, heating and drying to solidify the polydimethylsiloxane, and forming a protective layer; then removing the polydimethylsiloxane protective layer from the graphene film, stripping polymethyl methacrylate and graphene covered by the polymethyl methacrylate along with the polydimethylsiloxane, and finally leaving a required pattern on the graphene film, thereby obtaining a patterned copper-clad ceramic substrate based on graphene;
step 2, filling graphene powder prepared by a micromechanical stripping method or a chemical oxidation-reduction method into conductive adhesive taking epoxy resin as a matrix for interconnecting a chip and a substrate;
step 3, dispensing is carried out on the bottom surface of the pattern groove on the copper-clad ceramic substrate, the pattern groove is covered by the conductive adhesive prepared in the step 2, then the front side of the LED chip unit is inversely placed in the corresponding pattern groove, the LED chip unit is firmly fixed on the copper-clad ceramic substrate after heat treatment, and the periphery of the LED chip unit is contacted with the graphene film on the upper copper layer, so that the interconnection of the LED chip unit and the copper-clad ceramic substrate through the conductive adhesive is completed;
and 4, cleaning the surfaces of the radiator and the lower copper layer of the copper-clad ceramic substrate, drying, uniformly spreading a small amount of heat-conducting silicone grease at the central point of the radiator, flatly attaching the structure obtained in the step 3 to the surface of the radiator, and fixing to enable the structure to be tightly attached.
Compared with the prior art, the invention has the following advantages:
1. according to the graphene film provided by the invention, a new heat dissipation path is added on the premise that an original heat dissipation channel is not changed, and heat is quickly and effectively conducted to the whole graphene film from the side surface of the chip through the excellent transverse heat conduction capability of graphene, so that the highest temperature of a device is effectively reduced by transferring the graphene film to a substrate to a radiator.
2. According to the invention, the conductive adhesive prepared from the epoxy resin material filled with graphene powder is used as an interconnection material between the LED chip unit and the copper-clad ceramic substrate, so that the heat conduction capability from the chip to the substrate is enhanced, and meanwhile, the heat dissipation capability of the whole structure of the device is also improved in a flip-chip manner, and the conductive adhesive plays an important role in high heat flux density caused by high-number and high-density chip packaging.
Drawings
Fig. 1 is a schematic diagram of a heat dissipation structure of a high-power GaN-based LED according to the present invention.
Fig. 2 is a schematic diagram of a chip structure according to the present invention.
Fig. 3a is a schematic diagram of a patterned DBC substrate based on graphene according to the present invention.
Fig. 3b is a schematic diagram of a part of a heat dissipation structure of a high-power GaN-based LED with a graphene film according to the present invention.
Fig. 4 is a schematic diagram of a conventional high-power GaN-based LED heat dissipation structure and a heat conduction path.
Fig. 5 is a schematic diagram of a heat conduction path of a high-power GaN-based LED according to the present invention.
Fig. 6 is a schematic diagram of the upper surface heat conduction path of the high-power GaN-based LED according to the present invention.
Detailed Description
The invention is further described below with reference to the drawings and examples.
Referring to fig. 1 and 2, the invention provides a heat dissipation structure of a high-power GaN-based LED, which comprises an LED chip unit 21, a conductive adhesive 7, a graphene film 13, a copper-clad ceramic substrate, a heat conduction silicone grease 11 and a heat radiator 12, wherein the copper-clad ceramic substrate is provided with an upper copper layer 8 and a lower copper layer 10, the LED chip unit 21 is connected with the upper copper layer 8 of the copper-clad ceramic substrate in a flip-chip manner, and the lower copper layer 10 of the copper-clad ceramic substrate is connected with the heat radiator through the heat conduction silicone grease 11. The copper-clad ceramic substrate (Direct Bonded Copper, DBC) has an upper copper layer 8 on the upper surface of an AlN ceramic substrate 9 and a lower copper layer 10 on the lower surface. The upper copper layer 8 of the copper-clad ceramic substrate is provided with a pattern groove for accommodating the LED chip unit 21, the surface of the upper copper layer 8 is provided with a patterned graphene film 13, the LED chip unit 21 is flip-chip in the pattern groove, the front surface of the LED chip unit 21 is connected with the upper copper layer 8 through the conductive adhesive 7, the periphery of the LED chip unit 21 is contacted with the graphene film 13 on the upper copper layer 8, and the LED chip units 21 are connected through a circuit in the copper-clad ceramic substrate.
According to the invention, a chemical vapor deposition method is adopted to grow a patterned graphene film on a designed copper-clad ceramic substrate, and the patterned graphene film is used as a heat dissipation layer contacted with the side surface of an LED chip, so that on the premise of not affecting the heat conduction of the upper and lower surfaces of the chip, the heat of the side surfaces around the chip is rapidly and transversely transferred to the graphene heat dissipation layer by utilizing the transverse high heat conductivity of graphene, and then transferred to the substrate, so that a new heat conduction path is increased; the heat conduction path is shortened by adopting the flip-chip interconnection mode, the heat radiation performance of the whole structure is enhanced, and the effective heat radiation of the local high heat flux hot spot is realized, so that the highest temperature of the LED device is reduced, and the luminous efficiency and the service life of the GaN-based LED are improved.
The invention also provides a manufacturing process of the structure, taking an LED chip unit manufactured on a patterned sapphire substrate as an example, comprising the following steps:
step 1. The sapphire substrate 1 used in the embodiment is a Patterned Sapphire Substrate (PSS), concave hemispherical patterns are fabricated on both the light-emitting surface and the epitaxial growth surface of the sapphire substrate by dry etching, after surface cleaning, a GaN buffer layer is grown on the epitaxial growth surface of the sapphire by MOCVD, and then an n-type GaN layer 2, a GaN-based quantum well layer 3 and a p-type GaN layer 4 are sequentially deposited. Then, a metal electrode layer (i.e., p-type electrode 5) composed of Ni-Au is deposited on the p-type GaN layer, an n-type electrode 6 is deposited on the n-type GaN layer, and the electrode material is Pt, so that the LED chip unit 21 is manufactured.
And 2, directly growing graphene on the DBC substrate by adopting a chemical vapor deposition method.
Referring to fig. 3a, at the corresponding mounting position of the chip, 9 pattern grooves matched with the shape and the size of the chip are designed on the upper copper layer 8, and in the embodiment, the pattern grooves comprise 9 square grooves with the size of 1×1 mm. And (3) growing a graphene film with the thickness of 18-20 mu m on the whole upper copper layer 8 by adopting a chemical vapor deposition method, drawing PMMA (polymethyl methacrylate) solution on the surface of the graphene film 13 by adopting a printing technology at all corresponding pattern groove positions, forming a grid shape with the shape and the size of the pattern groove, and standing in air for half an hour to obtain the PMMA film on the surface of the graphene. And (3) a small amount of PDMS (polydimethylsiloxane) liquid is dripped on the surface of the graphene film after pattern drawing is completed, all the PMMA coating positions are covered, then the PDMS is solidified by heating and drying, a protective layer is formed, and then the PDMS protective layer is removed from the graphene film 13. Because the adhesion force of PMMA and PDMS is strong, and meanwhile, PMMA and graphene covered by the PMMA have strong acting force, and the adhesion force of PDMS and graphene is weak, PMMA and graphene covered by the PMMA are peeled off along with PDMS, and finally, a required pattern is left on the graphene film 13, so that the patterned DBC substrate based on graphene is obtained.
And 3, filling graphene powder prepared by a micromechanical stripping method or a chemical oxidation-reduction method into the conductive adhesive 7 taking the epoxy resin as a matrix, so as to enhance the heat conduction and electrical conductivity, and be used for interconnection between the chip and the substrate.
And 4, dispensing on the bottom surface of the pattern groove on the DBC substrate, and covering the pattern groove with the conductive adhesive 7 filled with graphene powder, wherein the thickness of the conductive adhesive is 10+/-0.5 mu m. Then the front side of the bare chip manufactured in step 1 is placed in the corresponding pattern groove upside down, see fig. 3b, and heat treatment is performed until the chip is firmly fixed on the substrate, and the periphery of the LED chip unit 21 is in contact with the graphene film 13 on the upper copper layer 8. The interconnection of the LED chip unit 21 with the copper-clad ceramic substrate through the conductive paste 7 is completed.
Step 5. Interconnection of the copper clad ceramic substrate with the heat sink 12. Cleaning the surfaces of the radiator 12 and the copper layer 10 below the substrate, drying, uniformly spreading a small amount of heat conduction silicone grease 11 at the central point of the radiator, flatly attaching the structure in the step 4 to the surface of the radiator 12, and fixing to enable the structure to be tightly attached. And (5) completing the basic encapsulation of the integral structure.
As shown in FIG. 4, the heat dissipation structure of the conventional high-power GaN-based LED has high heat flux hot spots on the LED chip unit 21, and the heat is directly conducted to the front surface of the chip and is transferred to the substrate and the radiator layer by layer downwards through the interconnection material due to the fact that the chip adopts a flip-chip interconnection mode. The heat of the sapphire is not enough to be transferred to the back of the chip, and more heat cannot be transferred through the back. Such heat conduction paths have limited heat transfer capability, require higher heat sinks, require larger fin heat sinks or better performing heat sinks, and are difficult to meet the needs of future high power LEDs.
According to the novel heat dissipation structure of the high-power GaN-based LED, the heat conduction path is shown in fig. 5 and 6, and the high heat flux hot spot generated in the chip is provided on the premise of not damaging the original heat conduction path due to the fact that the periphery of the side of the LED chip unit 21 is in contact with the graphene film 13. The high heat generated by the hot spot is rapidly transferred to the whole graphene film 13 by utilizing the transverse high heat conductivity of the graphene, the graphene film 13 is in large-area contact with the upper copper layer 8 of the DBC substrate, the heat can be rapidly transferred to the substrate, and the heat sequentially passes through the upper copper layer 8, the AlN ceramic substrate 9, the lower copper layer 10 and the heat conduction silicone grease 11 to the radiator 12. Rapidly reducing the maximum temperature of the whole device.
According to the patterned graphene prepared by adopting the chemical vapor deposition method, the patterned graphene contacts with the peripheral side surfaces of the chip, so that the excellent transverse heat conduction performance of the patterned graphene is exerted, the heat generated by local hot spots on the chip is rapidly transferred to the whole surface, and the transverse heat conduction performance of the whole heat dissipation structure is enhanced. The graphene powder prepared by adopting a micromechanical stripping method or a chemical oxidation-reduction method is filled into conductive adhesive taking epoxy resin as a matrix, so that the heat conduction and electrical conductivity of the graphene powder are enhanced, the graphene powder is used for interconnecting a chip and a substrate, and the longitudinal heat conduction capability of a device is enhanced. The enhancement of the transverse and longitudinal heat conduction capability obviously and effectively reduces the highest temperature of the device and improves the heat dissipation performance of the device. The interconnection mode of flip chip, the sapphire patterned substrate provides very great effect for improving the luminous efficiency and the service life of the device.
According to the invention, the graphene with high thermal conductivity is applied to the high-power GaN-based LED device, so that the problem of heat dissipation bottleneck of the high-power LED is solved, and the problems of potential safety hazard and service life of the high-power illuminating lamp caused by heat generation of the LED are well improved. The graphene material has the excellent characteristic of high heat conductivity, and can replace a heat dissipation structure of a traditional LED device in the future, and simultaneously, a more excellent scheme is provided for cost reduction of an LED lighting product.
The present invention is described in terms of the preferred embodiments of the present invention, but is not limited to the embodiments, but is to be accorded the widest scope consistent with the principles and novel features of the present invention.
Claims (4)
1. The heat dissipation structure of the high-power GaN-based LED comprises an LED chip unit (21), conductive adhesive (7), a graphene film (13), a copper-clad ceramic substrate, heat conduction silicone grease (11) and a radiator (12), wherein the copper-clad ceramic substrate is provided with an upper copper layer (8) and a lower copper layer (10), the LED chip unit (21) is connected with the upper copper layer (8) of the copper-clad ceramic substrate in a flip-chip manner, the lower copper layer (10) of the copper-clad ceramic substrate is connected with the radiator (12) through the heat conduction silicone grease (11), the heat dissipation structure is characterized in that a graph groove for accommodating the LED chip unit (21) is formed in the upper copper layer (8), the surface of the upper copper layer (8) is provided with the patterned graphene film (13), the LED chip unit (21) is flip-chip in the graph groove, the front surface of the LED chip unit (21) is connected with the upper copper layer (8) through the conductive adhesive (7), the periphery of the LED chip unit (21) is contacted with the graphene film (13) on the upper copper layer (8), and the LED chip unit (21) is connected through a circuit in the copper-clad ceramic substrate;
the conductive adhesive (7) is an epoxy resin conductive adhesive filled with graphene powder; the thickness of the conductive adhesive (7) covered in the pattern groove is 10+/-0.5 mu m;
the LED chip unit (21) comprises an n-type GaN layer (2), a GaN-based quantum well layer (3) and a p-type GaN layer (4) which are sequentially laminated on the front surface of a sapphire substrate (1), wherein a p-type electrode (5) is manufactured on the surface of the p-type GaN layer (4), and an n-type electrode (6) is also manufactured on the surface of the n-type GaN layer (2).
2. The heat dissipation structure of a high-power GaN-based LED of claim 1, wherein the graphene film (13) has a thickness of 18-20 μm.
3. The heat dissipating structure of a high power GaN-based LED of claim 1, wherein said heat sink (12) is fin-shaped and is made of metallic aluminum.
4. The processing technology of the heat radiation structure of the high-power GaN-based LED is characterized by comprising the following steps of:
step 1, designing a plurality of pattern grooves matched with the shapes and the sizes of the LED chip units (21) at the mounting positions of the LED chip units (21) on an upper copper layer (8) of a copper-clad ceramic substrate, and growing a graphene film (13) on the whole upper copper layer (8) by adopting a chemical vapor deposition method; drawing polymethyl methacrylate solution on the surface of a graphene film by adopting a printing technology at the positions corresponding to the pattern grooves, dripping polydimethylsiloxane liquid on the surface of the graphene film (13) with the pattern drawn, covering all positions coated by polymethyl methacrylate, and heating and drying to solidify the polydimethylsiloxane to form a protective layer; then removing the polydimethylsiloxane protective layer from the graphene film (13), removing polymethyl methacrylate and graphene covered by the polymethyl methacrylate along with the polydimethylsiloxane, and finally leaving a required pattern on the graphene film (13), thereby obtaining a grapheme-based patterned copper-clad ceramic substrate; the thickness of the graphene film (13) is 18-20 mu m;
step 2, filling graphene powder prepared by a micromechanical stripping method or a chemical oxidation-reduction method into conductive adhesive (7) taking epoxy resin as a matrix for interconnecting a chip and a substrate;
step 3, dispensing on the bottom surface of the pattern groove on the copper-clad ceramic substrate, covering the pattern groove with the conductive adhesive (7) prepared in the step 2, wherein the thickness of the conductive adhesive (7) covering the pattern groove is 10+/-0.5 mu m; then inversely placing the front side of the LED chip unit (21) in a corresponding pattern groove, and performing heat treatment until the LED chip unit (21) is firmly fixed on the copper-clad ceramic substrate, and the periphery of the LED chip unit (21) is contacted with the graphene film (13) on the upper copper layer (8), so that the interconnection of the LED chip unit (21) and the copper-clad ceramic substrate through the conductive adhesive (7) is completed;
and 4, cleaning the surfaces of the radiator (12) and the lower copper layer (10) of the copper-clad ceramic substrate, drying, uniformly spreading a small amount of heat conduction silicone grease (11) at the central point of the radiator (12), flatly attaching the structure obtained in the step 3 to the surface of the radiator (12), and fixing to enable the structure to be tightly attached.
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