CN201117676Y - Integrated microstructure high power light-emitting diode packaging structure - Google Patents
Integrated microstructure high power light-emitting diode packaging structure Download PDFInfo
- Publication number
- CN201117676Y CN201117676Y CNU2007200737530U CN200720073753U CN201117676Y CN 201117676 Y CN201117676 Y CN 201117676Y CN U2007200737530 U CNU2007200737530 U CN U2007200737530U CN 200720073753 U CN200720073753 U CN 200720073753U CN 201117676 Y CN201117676 Y CN 201117676Y
- Authority
- CN
- China
- Prior art keywords
- copper sheet
- copper
- high power
- integrated microstructure
- potsherd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Led Device Packages (AREA)
Abstract
A large power LBD sealing structure of an integrated micro-structure mainly includes a ceramic chap, an upper sheet copper and a lower sheet copper and is characterized in that the two sheet coppers are bonded on the upper and the lower surfaces through a direct bonding copper (DBC) technique and the surface or the inside of the lower sheet copper is provided with a micro-channel. The large power LBD sealing structure has the advantages that a luminous chip is directly welded on a metal bonding pad; the upper and the lower surfaces of a ceramic baseplate are all provided with a copper layer, thus having the advantages of small heat mismatching stress, low manufacture cost, compact structure and being beneficial to improve the sealing density; besides, a cooling liquid can be accessed into the micro-channel, thus greatly improving the radiating capacity of sealing.
Description
Technical field
The utility model relates to a kind of semiconductor device, particularly a kind of high power LED package structure of integrated microstructure.
Background technology
The internal quantum efficiency of light-emitting diode (LED) and external quantum efficiency are determining light extraction efficiency and the device brightness that LED is total.In the conventional light source, the luminous efficiency of fluorescent lamp is 60-100lm/W, the luminous efficiency of high-pressure sodium lamp is 60-120lm/W, also has only 100lm/W and at present the luminous efficiency of the basic white light LEDs of high-power gallium nitride (GaN) (blue light+fluorescent material) is the highest, and common have only 30-50lm/W.From the LED principle of luminosity, LED efficient (external quantum efficiency) is mainly decided by injection efficiency, internal quantum efficiency and light extraction efficiency three's product.Wherein, injection efficiency is relevant with the device series resistance with material structure, internal quantum efficiency mainly by in the structure of the quality of crystal growth, quantum well and the device fabrication processes to factors such as the damage decision of active layer.The internal quantum efficiency of GaN base LED is lower under the current room temperature, have only about 30%, and the light extraction efficiency of GaN based high-power LED is lower, have only about 10%, make the efficient of GaN based high-power LED, have the light about 90% can not derive and in device, consume with hot form less than 10%, cause waste of energy, more seriously make device heating, intensification cause the LED light efficiency sharply to descend, chip, bonding wire and encapsulating material serious aging shorten the life-span simultaneously.
Can see that by above analysis heat dissipation problem is to influence LED to obtain one of difficult problem of extensive use.General LED encapsulating structure as shown in Figure 1.Luminescence chip is welded on the substrate by soldering paste, substrate and heat sink between join with thermal interfacial material, so heat dissipation path is: luminescence chip-substrate-heat sink-environment.Substrate commonly used is generally the MCPCB plate, contains a layer insulating, and its thermal resistance is higher, and radiating effect is affected.Substrate and heat sink between the thermal interfacial material selected for use, certain thermal resistance is also arranged, increased the heat radiation difficulty.Heat conduct to heat sink after, existing passive heat radiation is distributed to heat in the environment by fin as shown in Figure 1.This kind method LED power hour radiating effect still can mate, but along with the improving constantly of LED power, heat dissipation capacity increases, the passive radiator structure of this class can not satisfy the heat radiation requirement of LED.
Summary of the invention
The purpose of this utility model is at the defective that exists in the prior art, and a kind of high power LED package structure of integrated microstructure is provided.
The utility model mainly comprises: potsherd, last copper sheet and following copper sheet, it is characterized in that the described copper sheet of going up is bonded in the potsherd upper and lower surface with following copper sheet by Direct Bonding copper (DBC Directed Bonded Cooper) technology, and be provided with the microchannel on following copper sheet surface or inside.The utility model has the advantages that luminescence chip directly is welded on the metal pad, the ceramic substrate upper and lower surface all has the copper layer, and thermal mismatch stress is little, cost of manufacture is low, and compact conformation helps improving packaging density, and can feed cooling circulation liquid in the microchannel, improve the package cooling ability greatly.
Description of drawings
The existing LED encapsulating structure of Fig. 1 plane graph;
Copper sheet cross-sectional view on Fig. 2 a;
Cross-sectional view under Fig. 2 b before the copper sheet processing;
Cross-sectional view under Fig. 2 c after the copper sheet processing;
Cross-sectional view about Fig. 2 d behind copper sheet and the potsherd bonding;
Structural section cutaway view after Fig. 2 e corrosion of metals processes;
Structural section cutaway view after the processing of Fig. 3 a metal diffusing bonding technology;
Cross-sectional view about Fig. 3 b behind copper sheet and the potsherd bonding;
Structural section cutaway view after Fig. 3 c corrosion of metals processes;
The cross-sectional view of Fig. 4 LED encapsulating structure.
11 luminescence chips, 12 solid crystal layers, 13 metallic diaphragms, 14 insulating barriers, 15 metal substrates, 16 welding (bonding) layers, 17 is heat sink, 18 contain the fluorescent powder silica gel layer, 19 gold threads, 20 encapsulation glue-lines, copper sheet on 21,22 times copper sheets, 23 microchannels, 24 potsherds, 25 chip region and circuit, copper sheet on 31,32 times copper sheets, 33 microchannels, 34 copper sheets, 35 potsherds, 36 compound copper sheets, 37 chip region and circuit, 41 luminescence chips, 42 solid crystal layers, 43 chip region and circuit, 44 potsherds, 45 microchannels, 46 times copper sheets, 47 contain the fluorescent powder silica gel layer, 48 gold threads, 49 encapsulation layer of silica gel.
Embodiment
Embodiment one
Further specify embodiment of the present utility model below in conjunction with accompanying drawing:
Referring to Fig. 2 a, Fig. 2 b, select two high-purity oxygen-free copper copper sheets that thickness is suitable, last copper sheet 21 thickness are 0.3mm, following copper sheet 22 thickness are 5mm.
Adopt Machining Technology, making cross sections on following copper sheet 22 surfaces is foursquare microchannel 23, and the square length of side is 2mm, referring to Fig. 2 c.The microchannel can be arranged as snakelike or M shape single or multiple lift structure.
Adopt Direct Bonding copper (DBC) technology that two copper sheets are bonded to the upper and lower surface of an alumina ceramic plate 24 simultaneously, potsherd 24 thickness are 0.63mm, referring to Fig. 2 d.
Adopt corrosion of metals technology, forming chip region and circuit structure 25 (copper sheet 22 under the protection simultaneously) on the last copper sheet 21, promptly prepare the base plate for packaging of integrated micro-channels structure, referring to Fig. 2 e.
Embodiment two
Embodiment two is identical with embodiment one, be not both and select earlier two high-purity oxygen-free copper copper sheets that thickness is suitable, wherein going up copper sheet 31 thickness is 1mm, following copper sheet 32 thickness are 3mm.
Adopt mechanical processing technique to produce square microchannel 33 on following copper sheet 32 surfaces, the square length of side is 2mm.And adopt the metal diffusing bonding technology that two copper sheets are bonded to together, referring to Fig. 3 a.
Adopt DBC technology that another piece copper sheet 34 (thickness is 0.2mm) and compound copper sheet 36 are bonded to the upper and lower surface of potsherd 35 simultaneously, the potsherd material is an aluminium nitride, and thickness is 1mm, referring to Fig. 3 b.
Adopt corrosion of metals technology, forming chip region and circuit structure 37 (copper sheet 31 under the protection simultaneously) on the copper sheet 34, promptly prepare the base plate for packaging of another kind of integrated micro-channels structure, referring to Fig. 3 c.
Fig. 4 is for adopting the LED package substrate construction figure of the utility model preparation, luminescence chip 41 is fixed on chip region 43 by solid crystal layer 42, luminescence chip 41 is connected with circuit by gold thread 48, following copper sheet 45 adopts DBC technology and potsherd 44 to be bonded together, following copper sheet 45 is provided with microchannel 46, luminescence chip 41 upper surfaces are provided with and contain fluorescent powder silica gel layer 47, and are outside for encapsulating layer of silica gel 49.
In the above-described embodiments, the cross sectional shape of described Micro Channel Architecture also can be rectangle or semicircle, and the microchannel can be arranged as snakelike or M shape single or multiple lift structure.
Claims (4)
1. the high power LED package structure of an integrated microstructure, mainly comprise: potsherd, last copper sheet and following copper sheet, it is characterized in that the described copper sheet of going up is bonded in the potsherd upper and lower surface with following copper sheet by Direct Bonding copper (DBC) technology, and be provided with the microchannel on following copper sheet surface or inside.
2. the high power LED package structure of integrated microstructure according to claim 1 is characterized in that described going up on the copper sheet has chip region and circuit structure.
3. the high power LED package structure of integrated microstructure according to claim 1 is characterized in that described microchannel is snakelike or M shape single or multiple lift structure, and its cross sectional shape can be square or rectangular or semicircle.
4. the high power LED package structure of integrated microstructure according to claim 1 is characterized in that described potsherd is aluminium oxide or aluminium nitride or ceramic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200737530U CN201117676Y (en) | 2007-08-17 | 2007-08-17 | Integrated microstructure high power light-emitting diode packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200737530U CN201117676Y (en) | 2007-08-17 | 2007-08-17 | Integrated microstructure high power light-emitting diode packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201117676Y true CN201117676Y (en) | 2008-09-17 |
Family
ID=39992259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007200737530U Expired - Lifetime CN201117676Y (en) | 2007-08-17 | 2007-08-17 | Integrated microstructure high power light-emitting diode packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201117676Y (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916757A (en) * | 2010-07-23 | 2010-12-15 | 广东昭信光电科技有限公司 | Microfluid cooling silicon wafer level LED illuminating system |
| CN102011969A (en) * | 2010-10-12 | 2011-04-13 | 江苏捷诚车载电子信息工程有限公司 | Combined modular backlight unit for flat panel display and helmet |
| WO2011060714A1 (en) * | 2009-11-18 | 2011-05-26 | 珠海晟源同泰电子有限公司 | Led light emitting module and manufacturing method thereof |
| CN102280540A (en) * | 2011-08-18 | 2011-12-14 | 上海亚明灯泡厂有限公司 | Light emitting diode (LED) module with microchannel radiator and method for making LED module |
| CN102655732A (en) * | 2012-05-12 | 2012-09-05 | 浙江大学 | Power module substrate with heat radiation structure |
| CN102820405A (en) * | 2012-07-17 | 2012-12-12 | 大连理工大学 | Integrated manufacturing method of silicon base plate and copper micro heat pipe of LED (light emitting diode) apparatus |
| WO2013091143A1 (en) * | 2011-12-21 | 2013-06-27 | 武汉飞恩微电子有限公司 | Microchannel direct bonded copper substrate and packaging structure and process of power device thereof |
| CN103748676A (en) * | 2011-05-31 | 2014-04-23 | 赛方塊股份有限公司 | Mounting structure of laminated module using interposer |
| CN104253121A (en) * | 2013-06-28 | 2014-12-31 | 横山明聪 | Omnidirectional light-emitting diode device and packaging method thereof |
| CN104755836A (en) * | 2012-08-22 | 2015-07-01 | 弗莱克斯-N-格特现代产品开发有限公司 | Micro-channel heat sink for LED headlamp |
| CN107994107A (en) * | 2017-11-28 | 2018-05-04 | 西安科锐盛创新科技有限公司 | A kind of great power LED double-decker packaging technology |
| CN108011027A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | LED encapsulation structure and its method |
| CN108831986A (en) * | 2018-05-07 | 2018-11-16 | 深圳技术大学（筹） | heat sink device and preparation method thereof |
| CN109119392A (en) * | 2018-08-06 | 2019-01-01 | 华进半导体封装先导技术研发中心有限公司 | The device encapsulation structure and preparation method thereof to be radiated by fluid channel |
| CN109920904A (en) * | 2019-04-10 | 2019-06-21 | 黄山学院 | The radiator structure and processing technology of high-power GaN-based LED |
| CN110571200A (en) * | 2019-09-20 | 2019-12-13 | 清华大学 | Sunken flexible circuit integrated device and manufacturing method thereof |
-
2007
- 2007-08-17 CN CNU2007200737530U patent/CN201117676Y/en not_active Expired - Lifetime
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011060714A1 (en) * | 2009-11-18 | 2011-05-26 | 珠海晟源同泰电子有限公司 | Led light emitting module and manufacturing method thereof |
| CN101916757B (en) * | 2010-07-23 | 2011-12-21 | 广东昭信光电科技有限公司 | Microfluid cooling silicon wafer level LED illuminating system |
| CN101916757A (en) * | 2010-07-23 | 2010-12-15 | 广东昭信光电科技有限公司 | Microfluid cooling silicon wafer level LED illuminating system |
| CN102011969A (en) * | 2010-10-12 | 2011-04-13 | 江苏捷诚车载电子信息工程有限公司 | Combined modular backlight unit for flat panel display and helmet |
| CN103748676A (en) * | 2011-05-31 | 2014-04-23 | 赛方塊股份有限公司 | Mounting structure of laminated module using interposer |
| CN102280540A (en) * | 2011-08-18 | 2011-12-14 | 上海亚明灯泡厂有限公司 | Light emitting diode (LED) module with microchannel radiator and method for making LED module |
| CN103975432B (en) * | 2011-12-21 | 2018-01-02 | 南京皓赛米电力科技有限公司 | The encapsulating structure and technique of microchannel direct copper substrate and its power device |
| WO2013091143A1 (en) * | 2011-12-21 | 2013-06-27 | 武汉飞恩微电子有限公司 | Microchannel direct bonded copper substrate and packaging structure and process of power device thereof |
| CN103975432A (en) * | 2011-12-21 | 2014-08-06 | 武汉飞恩微电子有限公司 | Microchannel direct bonded copper substrate and packaging structure and process of power device thereof |
| CN102655732A (en) * | 2012-05-12 | 2012-09-05 | 浙江大学 | Power module substrate with heat radiation structure |
| CN102820405A (en) * | 2012-07-17 | 2012-12-12 | 大连理工大学 | Integrated manufacturing method of silicon base plate and copper micro heat pipe of LED (light emitting diode) apparatus |
| CN104755836A (en) * | 2012-08-22 | 2015-07-01 | 弗莱克斯-N-格特现代产品开发有限公司 | Micro-channel heat sink for LED headlamp |
| CN104253121A (en) * | 2013-06-28 | 2014-12-31 | 横山明聪 | Omnidirectional light-emitting diode device and packaging method thereof |
| CN107994107A (en) * | 2017-11-28 | 2018-05-04 | 西安科锐盛创新科技有限公司 | A kind of great power LED double-decker packaging technology |
| CN108011027A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | LED encapsulation structure and its method |
| CN108831986A (en) * | 2018-05-07 | 2018-11-16 | 深圳技术大学（筹） | heat sink device and preparation method thereof |
| CN109119392A (en) * | 2018-08-06 | 2019-01-01 | 华进半导体封装先导技术研发中心有限公司 | The device encapsulation structure and preparation method thereof to be radiated by fluid channel |
| CN109920904A (en) * | 2019-04-10 | 2019-06-21 | 黄山学院 | The radiator structure and processing technology of high-power GaN-based LED |
| CN109920904B (en) * | 2019-04-10 | 2023-11-10 | 黄山学院 | Heat radiation structure of high-power GaN-based LED and processing technology |
| CN110571200A (en) * | 2019-09-20 | 2019-12-13 | 清华大学 | Sunken flexible circuit integrated device and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201117676Y (en) | Integrated microstructure high power light-emitting diode packaging structure | |
| US20060094137A1 (en) | Method of manufacturing ceramic LED packages | |
| JP2002335019A (en) | Light emitting device | |
| CN201412704Y (en) | Light source of integrated LED chip | |
| CN101621105B (en) | LED flip chip integration encapsulation method and LED encapsulated by same | |
| CN102354699B (en) | High pressure nitride LED device and manufacture method thereof | |
| CN100536130C (en) | High heat radiation multi-chip integrated high-power white light LED module and its making method | |
| TW200807770A (en) | Light emitting diode module for line light source | |
| CN203481273U (en) | LED light source module based on AlSiC composite substrate | |
| CN101532612A (en) | Method for manufacturing integrated LED chip light source | |
| JP2011035264A (en) | Package for light emitting element and method of manufacturing light emitting element | |
| CN102339945B (en) | High-power light-emitting diode (LED) with cooling substrate made of diamond powder-copper powder composite | |
| CN101442099A (en) | Structure of low thermal resistance LED and method for producing the same | |
| CN101369615B (en) | Packaging method for low-thermal resistance high-power light-emitting diode | |
| CN102231378A (en) | Light-emitting diode (LED) packaging structure and preparation method thereof | |
| US20100301359A1 (en) | Light Emitting Diode Package Structure | |
| CN100508230C (en) | LED chip and thermal sediment direct encapsulated heat radiation component and its making device and method | |
| WO2010006475A1 (en) | A ceramic packaging substrate for the high power led | |
| KR20060126115A (en) | High power led package and fabrication method thereof | |
| CN204167364U (en) | High heat conduction aluminium nitride full porcelain LED shell | |
| CN102903838A (en) | Packaged LED light source with radiating structure and production method thereof | |
| US20140197434A1 (en) | Light emitting diode device and method for manufacturing heat dissipation substrate | |
| CN211654852U (en) | Light emitting device and carrier | |
| CN103247742A (en) | LED heat radiation substrate and manufacturing method thereof | |
| CN103165792A (en) | Light emitting diode (LED) heat-dissipation packaging structure, LED light and manufacturing method of LED heat-dissipation packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Hunan Yiyuan Photoelectric Technology Co., Ltd. Assignor: Guangdong Shaoxin Opto-electrical Technology Co., Ltd. Contract record no.: 2011430000048 Denomination of utility model: Integrated microstructure high power light-emitting diode packaging structure Granted publication date: 20080917 License type: Exclusive License Record date: 20110421 |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20080917 |