WO2013091143A1 - Microchannel direct bonded copper substrate and packaging structure and process of power device thereof - Google Patents

Microchannel direct bonded copper substrate and packaging structure and process of power device thereof Download PDF

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Publication number
WO2013091143A1
WO2013091143A1 PCT/CN2011/002158 CN2011002158W WO2013091143A1 WO 2013091143 A1 WO2013091143 A1 WO 2013091143A1 CN 2011002158 W CN2011002158 W CN 2011002158W WO 2013091143 A1 WO2013091143 A1 WO 2013091143A1
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WIPO (PCT)
Prior art keywords
microchannel
copper substrate
direct copper
metal layer
layer
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PCT/CN2011/002158
Other languages
French (fr)
Chinese (zh)
Inventor
刘胜
吴步龙
罗小兵
徐玲
周洋
张阳
吴林
Original Assignee
武汉飞恩微电子有限公司
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Priority to CN201180074643.5A priority Critical patent/CN103975432B/en
Priority to PCT/CN2011/002158 priority patent/WO2013091143A1/en
Publication of WO2013091143A1 publication Critical patent/WO2013091143A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Definitions

  • the present invention relates to a high power device package structure, and more particularly to a package structure for a microchannel direct copper substrate and its power device.
  • the present invention provides a cooling structure and method for power packaging that is suitable for use in packaging of various high power devices and other power devices and their modules.
  • Insulated Gate Bipolar Transistor is an efficient three-max power semiconductor device. IGBTs are commonly used in inverter circuits in motor drive circuits, and the application of IGBTs has become a driving force for new developments in the power electronics industry. With the development of power devices, how to reduce the weight and volume of power devices has been widely concerned in the industry. The cooling system of power electronics is the key factor to reduce the weight and volume of devices. The heat sink of aluminum alloy used in traditional structures. For the car is too heavy, too large, the current liquid cooling on the car has replaced the air cooling method to cool high-power devices.
  • the conventional liquid-cooled structure used to replace the air-cooled heat sink is still too large in weight and volume for the automobile, and therefore requires a micro-system capable of directly cooling the high-power chip and cold enough to reduce the volume and weight of the cooling system.
  • the channel is directly coated with a copper substrate structure.
  • the conventional liquid-cooled structure also brings about a large interfacial thermal resistance, thereby affecting the cooling effect.
  • the high-power device package structure using the microchannel direct copper substrate has a smaller number of material layers and a smaller interface thermal resistance, and thus has good thermal performance.
  • the invention relates to a microchannel direct copper substrate and a package structure and a process thereof.
  • the invention provides a microchannel direct copper substrate composed of at least two metal layers and a ceramic layer, characterized in that the top surface of the first metal layer comprises a columnar array structure, a fluid inlet hole and a fluid outlet hole.
  • the ceramic layer is a semi-closed cover structure, and the second metal layer is divided into two parts: a high voltage pad and a low voltage pad.
  • the array structure of the top surface of the first metal layer of the microchannel direct copper-clad substrate is of a cylindrical shape or a triangular column shape or a square column shape or a hexagonal prism shape, and the pipe array formed by the top surface of the first metal layer is aligned Or staggered.
  • the size of the ceramic layer is designed according to the size of the first metal layer, and the ceramic is combined with the top surface of the first metal layer to form a microchannel structure of the coolant.
  • the second metal layer is combined with the top surface of the ceramic layer.
  • the power electronic package structure of the microchannel direct copper substrate is a diode chip and an IGBT chip mounted on the top surface of the microchannel direct copper substrate, and the anode of the diode chip and the drain of the IGBT chip pass through the top of the direct copper substrate.
  • the copper layer is electrically connected, and the cathode of the diode chip and the source of the IGBT chip are electrically connected by wires.
  • IGBT The chip, the diode chip and the electrode are sealed in a plastic casing, and then a potting glue is injected into the plastic casing for sealing, and the electrode extends outside the plastic casing to realize electrical connection between the internal circuit and the external circuit.
  • At least three aluminum wires are required to be connected between the IGBT chip and the diode chip. At least three aluminum wires are connected between the diode chip and the high voltage disk.
  • the step of directly applying a power electronic package structure of the microchannel to the copper substrate bonding the ceramic layer to the top surface of the first metal layer to form a microchannel of the cooling liquid, the top surface of the first metal layer containing the columnar array
  • the metal layer of the structure and the liquid inlet and outlet, the size of the first metal layer is designed according to the size of the ceramic layer
  • the microchannel has a semi-conducting pipe structure
  • the second metal layer is bonded on the top surface of the ceramic layer to form a microchannel directly a copper substrate
  • the second metal layer comprises a high voltage pad and a low voltage pad
  • the IGBT chip is mounted on the top surface of the direct copper substrate low voltage disk
  • the IGBT chip has a drain, a source and a gate, wherein the drain
  • the conductive paste is electrically connected to the low voltage pad, and the diode chip is mounted on the top surface of the low voltage pad of the direct copper substrate.
  • the diode chip contains a cathode and an anode, and the anode is electrically connected to the low voltage disk by a conductive adhesive.
  • the anode of the diode chip and the source of the IGBT chip are electrically connected to the high voltage pad, and the two electrodes are electrically connected to the microchannel directly to the high voltage pad and the low voltage pad of the copper substrate by using the conductive adhesive.
  • a plastic shell is molded on the direct copper substrate, and the top surface of the IGBT chip, the diode chip, the partial electrode and the microchannel direct copper substrate is wrapped therein, and the potting glue is injected into the shell to fix the current terminal in the extension. Electrodes outside the plastic housing allow it to be electrically connected to external circuitry.
  • the invention also provides a microchannel direct copper-clad substrate, wherein the microchannel is arranged in a ceramic layer, the first metal layer comprises a liquid inlet hole and an outlet hole, the ceramic layer is provided with a continuous micro-groove, and the second metal layer comprises Low voltage pad and high voltage pad.
  • the cross-sectional shape of the continuous groove of the ceramic layer may be a triangle, a semicircle, or a rectangle.
  • the microchannel direct copper-clad substrate has a microchannel disposed on the second metal layer structure, and the lower surface of the second metal layer includes a continuous trench, the layer is provided with a liquid inlet and outlet matching the groove position, and the second layer
  • the upper layer of the metal layer is a ceramic layer, the third metal layer is disposed above the ceramic layer, and the third metal layer is divided into a high voltage pad and a low voltage disk, and the second metal layer is thermocompression bonded.
  • a metal layer is fixed on the lower surface of the second metal layer to form a microchannel of the cooling liquid
  • the ceramic layer is fixed on the upper surface of the second metal layer by conventional DBC thermocompression bonding, by conventional DBC hot pressing Bonding secures a third layer of metal to the top surface of the ceramic layer to form a third microchannel direct copper substrate.
  • the cross-sectional shape of the continuous groove structure of the lower surface of the second metal layer may be rectangular, semi-circular, or triangular.
  • An advantage of the present invention is that the cooling system of the present invention is smaller in size, lighter in weight, less in material layers, less in interface thermal resistance, better in thermal performance, and lower in cooling efficiency than a method using a cooling plate or a heat sink. Higher, lower cost.
  • FIG. 2A is a flow chart of the process for forming a microchannel direct copper substrate according to the present invention
  • 2C is a flow chart of a process for forming a microchannel direct copper substrate according to the present invention
  • FIG. 3 is a flow chart of a process for forming a microchannel direct copper substrate according to the present invention
  • FIG. 4A is a schematic structural view of Embodiment 2 of the present invention
  • 4B is a cross-sectional structural view of a second embodiment of the present invention
  • FIG. 5A is a flow chart showing a process of forming a microchannel direct copper substrate according to Embodiment 2 of the present invention
  • FIG. 5B is a second embodiment of the present invention.
  • FIG. 5C is a flow chart showing a process of forming a microchannel direct copper substrate according to Embodiment 2 of the present invention
  • FIG. 6A is a schematic structural view of Embodiment 3 of the present invention
  • FIG. 6B is a schematic cross-sectional view showing a third embodiment of the present invention.
  • FIG. 7 is a flow chart showing a process of forming a microchannel direct copper substrate according to Embodiment 3 of the present invention.
  • FIG. 1A is a schematic view showing the structure of a first embodiment of the present invention.
  • the microchannel direct copper-clad substrate is composed of two metal layers and one ceramic layer.
  • the power electronic package structure 100 using the microchannel direct copper substrate 102 is packaged in a plastic housing 104, and the microchannel direct copper substrate 102 is fixed to the bottom surface of the inner casing.
  • the plastic housing 104 is shown in a transparent view
  • FIGS. 1B and 1C are cross-sectional views of internal structures. As shown in FIGS.
  • the direct copper substrate includes: a first metal layer, that is, a bottom copper layer 106, a fluid inlet 106a and a fluid outlet 106b, a ceramic cavity layer 108, and a top copper layer 10,
  • the second metal layer that is, the top copper layer, is divided into two parts, a high voltage pad 110a and a low voltage pad 1 10b.
  • a ceramic layer containing the etched cylindrical array structure 106c is soldered to the top surface of the underlying copper layer to form microchannels.
  • the IGBT chip 114 and the diode chip 116 are mounted on the top surface of the low voltage pad 110b of the top copper layer 110 through the conductive paste 112. On.
  • the drain of the IGBT chip 114 and the anode of the diode chip 118 are electrically connected through the low voltage pad 110b of the top copper layer 110.
  • the electrical connection between the source of the IGBT chip 114, the cathode of the diode chip 118, and the high voltage pad 110a is achieved by the leads 118.
  • the gate contacts are on the top surface of the IGBT chip 114.
  • the lead terminals 120a and 120b are respectively fixed to the high voltage pad 110a and the low voltage pad 110b of the top copper layer 110 by the conductive paste 112.
  • a top copper layer of the direct copper substrate 110, an IGBT chip 114, a diode chip 1 16, a lead 18 and a portion of the lead terminals 120a and 120b are encapsulated in a soft plastic in the plastic case 104, and the current terminals 122a and 122b are extended. Out of the plastic case 104, electrical connection of the power module to the external environment is achieved.
  • 2A, 2B, and 2C are processes 200 depicting the formation of a microchannel direct copper substrate 102.
  • the top surface of the copper plate 202 is etched by etching to form a cylindrical array structure 106c, a fluid inlet 106a, and a fluid outlet 106b.
  • the pipe array of this embodiment is aligned.
  • the ceramic layer 108 is sintered in step 205 into the shape of a semi-closed casing, as shown in Figure 2B.
  • the size of the ceramic layer 108 is designed according to the size of the bottom copper layer 106.
  • the bonding of the direct copper substrate is performed by a standard thermocompression bonding method.
  • the ceramic layer 108 is soldered to the upper surface of the bottom copper layer 106 by a conventional thermocompression bonding method.
  • the top copper layer 110 is soldered to the top surface of the ceramic layer 108 by the same splicing method to form a microchannel direct copper substrate 102.
  • 3 is a flow chart of the process of forming a microchannel direct copper substrate in the embodiment.
  • step 302 the IGBT chip 114 and the diode chip 116 are mounted on the low voltage pad 110b of the top copper layer 110 through a conductive paste, thereby An assembly 304 is formed.
  • the drain of the IGBT chip 114 and the anode of the diode chip 116 are electrically connected by a conductive paste.
  • step 306 the source of the IGBT chip 114, the cathode of the diode chip 116, and the high voltage pad 110a of the top copper layer 110 are electrically connected by three aluminum leads to form the assembly 308.
  • step 310 the lead terminals 120a and 120b are respectively fixed to the high voltage pad 110a and the low voltage disk 110b of the top copper layer 110 by the conductive paste 112.
  • the plastic housing 104 is molded to encapsulate the microchannels directly onto the components on the copper substrate 102.
  • the material of the housing 104 can be any suitable thermoset material.
  • a soft gel is poured into the outer casing 104 to seal the top copper layer of the copper-clad substrate 110, the IGBT chip 114, the diode chip 116, the electrical wiring 120, and a portion of the electrical terminals 120a and 120b.
  • the current contacts 122a and 122b are fixed to electrically connect to the external environment to form the electronic power package structure 100.
  • the second embodiment is the same as the first embodiment except that the microchannel is disposed on the ceramic layer, and the structure of the direct copper substrate 402 is different from the microchannel direct copper substrate 102 in the electronic power package structure 100 shown in FIG.
  • the copper-clad substrate 402 includes three layers: a bottom copper layer 406, a ceramic layer 408 provided with a continuous trench 408a, and a top copper layer 410.
  • 4A is a schematic structural view of a second embodiment of the present invention
  • FIG. 4B is a schematic cross-sectional structural view of a second embodiment of the present invention.
  • 5A is a flow chart showing a process of forming a microchannel direct copper substrate according to the second embodiment, FIG.
  • FIG. 5B is a schematic structural view of a direct copper substrate ceramic layer according to the second embodiment
  • FIG. 5C is a second embodiment of forming a microchannel direct copper substrate. flow chart.
  • the copper plate 502 is etched in step 504 to form a fluid inlet aperture 406a and an exit aperture 406b.
  • the ceramic layer 408 is sintered into the shape of the continuous trench 408a shown in FIG. 5B, the continuous trench 408a of the ceramic layer.
  • the cross-sectional shape can be a triangle, a semicircle, or a rectangle.
  • the inlet and outlet holes of the liquid are designed to match the microgrooves of the ceramic layer, and are bonded to the bottom surface of the ceramic layer to form a microchannel of the cooling liquid, and the position of the liquid inlet and outlet is matched with the continuous groove;
  • a ground copper layer 406 is bonded to the surface of the ceramic layer 408 as a metal cover by a thermocompression bonding method to form a microchannel structure, and the top copper layer 410 is bonded to the ceramic layer 408.
  • Embodiment 3 is the same as Embodiment 1, except that the microchannel is disposed on the 1 ⁇ 2 structure of the second metal layer, and the direct copper substrate 602 has a four-layer structure, including: the ground copper plate 606, and the first trench 608a A two-layer copper layer 608, a ceramic layer 610, and a top copper layer 612. See Figure 6A, Figure 6B. 7 is a flow chart of a third embodiment of forming a microchannel direct copper substrate. As shown in FIG. 7, the process 700 of forming a microchannel direct copper substrate 602 includes: in step 704, forming a fluid on the copper plate 702 by etching.
  • a continuous groove 608a is formed on a surface of the thick copper plate 706, and the cross-sectional shape of the continuous groove 608a is rectangular or semi-circular or triangular, and the position of the liquid inlet and outlet is Trench matching; in step 710, the bottom copper layer 606 is bonded as a metal cover to the lower surface of the second copper layer 608 by a thermocompression bonding method to form a microchannel structure; The upper surface of the assembly 712 is bonded to the lower surface of the ceramic layer 610 by a thermocompression bonding method, and the top copper layer 612 is bonded to the upper surface of the ceramic layer 610 to form a microchannel direct copper substrate. 602.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A microchannel direct bonded copper substrate and a packaging structure and process of a power device thereof. The packaging structure comprises: a microchannel direct bonded copper substrate, a diode chip, an IGBT chip, and a plastic housing. The diode chip is mounted on the direct bonded copper substrate and is electrically connected to the substrate and the IGBT chip separately, the IGBT chip is mounted on the direct bonded copper substrate and is electrically connected to the substrate and diode chip separately, the plastic housing seals the microchannel direct bonded copper substrate, the diode chip, the IGBT chip and an electrode, a potting adhesive is injected into the plastic housing to package the diode chip, the IGBT chip and a part of the electrode, the electrode extends out of the plastic housing to implement electrical connection between the internal circuit and an external circuit. The advantage of the present invention is that, compared with the method of a cooling plate and a heat sink adopting liquid state cooling, the cooling efficiency is greatly increased; as the number of material layers used in the packaging is reduced, the interface thermal resistance is significantly reduced, and a cooling plate and a heat sink requiring a large space are abandoned, thereby greatly reducing the packaging volume.

Description

说 明 书 微通道直接敷铜基板及其功率器件的封装结构和工艺  Description of the package structure and process of microchannel direct copper substrate and its power device
技术领域 Technical field
本发明涉及一种大功率器件封装结构，特别是指涉及一种微通道直接敷铜基板及其 功率器件的封装结构。 本发明提供一种用于功率封装的冷却结构和方法， 适用于各种大 功率器件和其它功率器件及其模组的封装。  The present invention relates to a high power device package structure, and more particularly to a package structure for a microchannel direct copper substrate and its power device. The present invention provides a cooling structure and method for power packaging that is suitable for use in packaging of various high power devices and other power devices and their modules.
背景技术 Background technique
绝缘栅双极型晶体管， 英文简称 IGBT (Insulated Gate Bipolar Transistor) 是一种 高效的三极大功率半导体器件。 IGBT通常被用在电机驱动电路中的逆变电路部分， IGBT的应用已经成为了功率电子行业新发展的推动力。 随着功率器件的发展， 如何减 小功率器件的重量和体积在行业内已经受到广泛关注， 功率电子的冷却系统式减小器 件重量和体积的关键因素， 传统结构中所用的铝合金的热沉对于汽车来说太重， 体积 太大， 目前汽车上液冷已经取代气冷的方法来冷却大功率器件。  Insulated Gate Bipolar Transistor (IGBT) is an efficient three-max power semiconductor device. IGBTs are commonly used in inverter circuits in motor drive circuits, and the application of IGBTs has become a driving force for new developments in the power electronics industry. With the development of power devices, how to reduce the weight and volume of power devices has been widely concerned in the industry. The cooling system of power electronics is the key factor to reduce the weight and volume of devices. The heat sink of aluminum alloy used in traditional structures. For the car is too heavy, too large, the current liquid cooling on the car has replaced the air cooling method to cool high-power devices.
然而， 用来取代气冷热沉的常规的液冷结构对于汽车来说其重量和体积仍然太大， 因此需要一种能够直接冷却大功率芯片的并且冷够减小冷却系统体积和重量的微通道 直接敷铜基板结构。 此外， 由于多层材料的原因， 常规的液冷结构还带来较大的界面 热阻， 从而影响冷却效果。 应用了微通道直接敷铜基板的大功率器件封装结构具有更 少的材料层数和更小的界面热阻， 因此具有良好的热学性能。  However, the conventional liquid-cooled structure used to replace the air-cooled heat sink is still too large in weight and volume for the automobile, and therefore requires a micro-system capable of directly cooling the high-power chip and cold enough to reduce the volume and weight of the cooling system. The channel is directly coated with a copper substrate structure. In addition, due to the multilayer material, the conventional liquid-cooled structure also brings about a large interfacial thermal resistance, thereby affecting the cooling effect. The high-power device package structure using the microchannel direct copper substrate has a smaller number of material layers and a smaller interface thermal resistance, and thus has good thermal performance.
发明内容 Summary of the invention
本发明涉及一种微通道直接敷铜基板及其功率器件的封装结构和工艺。本发明提供了 一种微通道直接敷铜基板由至少两层金属层和一层陶瓷层组成，其特征在于第一层金属层 的顶面包含柱状整列结构、一个流体进口孔和一个流体出口孔，陶瓷层为半封闭罩壳结构， 第二层金属层被分为高压焊盘和低压焊盘两部分。  The invention relates to a microchannel direct copper substrate and a package structure and a process thereof. The invention provides a microchannel direct copper substrate composed of at least two metal layers and a ceramic layer, characterized in that the top surface of the first metal layer comprises a columnar array structure, a fluid inlet hole and a fluid outlet hole. The ceramic layer is a semi-closed cover structure, and the second metal layer is divided into two parts: a high voltage pad and a low voltage pad.
所述微通道直接敷铜基板的第一层金属层顶面的阵列结构的类型为圆柱形或三角柱 形或方柱形或六棱柱形， 第一层金属层顶面形成的管道阵列是对齐排列或是交错排列。 陶 瓷层的大小是根据第一层金属层的尺寸来设计， 陶瓷与第一层金属层的顶面相结合， 从而 形成冷却液的微通道结构。 第二层金属层与陶瓷层的顶面相结合。  The array structure of the top surface of the first metal layer of the microchannel direct copper-clad substrate is of a cylindrical shape or a triangular column shape or a square column shape or a hexagonal prism shape, and the pipe array formed by the top surface of the first metal layer is aligned Or staggered. The size of the ceramic layer is designed according to the size of the first metal layer, and the ceramic is combined with the top surface of the first metal layer to form a microchannel structure of the coolant. The second metal layer is combined with the top surface of the ceramic layer.
所述微通道直接敷铜基板的功率电子封装结构为二极管芯片和 IGBT芯片贴装在微通 道直接敷铜基板的顶面上， 二极管芯片的阳极和 IGBT芯片的漏极通过直接敷铜基板的顶 面铜层实现电连， 二极管芯片的阴极和 IGBT芯片的源极之间通过引线实现电连。 IGBT 芯片、 二极管芯片和电极被密封在塑料外壳内， 再向塑料外壳内注入灌封胶进行密封， 电 极延伸至塑料外壳之外实现内部电路与外部电路的电连。 The power electronic package structure of the microchannel direct copper substrate is a diode chip and an IGBT chip mounted on the top surface of the microchannel direct copper substrate, and the anode of the diode chip and the drain of the IGBT chip pass through the top of the direct copper substrate. The copper layer is electrically connected, and the cathode of the diode chip and the source of the IGBT chip are electrically connected by wires. IGBT The chip, the diode chip and the electrode are sealed in a plastic casing, and then a potting glue is injected into the plastic casing for sealing, and the electrode extends outside the plastic casing to realize electrical connection between the internal circuit and the external circuit.
所述 IGBT芯片与二极管芯片之间至少需要 3根铝线来连接。 二极管芯片与高压悍盘 之间至少设有三根铝线来连接。  At least three aluminum wires are required to be connected between the IGBT chip and the diode chip. At least three aluminum wires are connected between the diode chip and the high voltage disk.
所述微通道直接敷铜基板的功率电子封装结构的步骤：将陶瓷层粘结在第一层金属层 的顶面， 形成冷却液的微通道， 该第一层金属层的顶面含有柱状阵列结构和液体进出口的 金属层， 第一层金属层大小根据陶瓷层的尺寸设计， 微通道具有半导通管道结构，将第二 层金属层粘结在陶瓷层的顶面以形成微通道直接敷铜基板， 第二层金属层包含高压焊盘 和低压焊盘， 将 IGBT芯片贴装在直接敷铜基板低压悍盘的顶面， IGBT芯片含有漏极、 源极和门极， 其中将漏极用导电胶电连接在低压焊盘上，将二极管芯片贴装在直接敷铜基 板低压焊盘的顶面， 二极管芯片含有阴极和阳极， 将阳极用导电胶电连接在低压悍盘上， 将二极管芯片的阳极和 IGBT芯片的源极电连接在高压焊盘上，用导电胶将两个电极分别 电连接微通道直接敷铜基板的高压焊盘和低压焊盘上，在直接敷铜基板上模制一个塑料外 壳， 将 IGBT芯片、 二极管芯片、 部分电极和微通道直接敷铜基板的顶面包裹其中， 并往 壳中注入灌封胶,将电流端子固定在延伸到塑料外壳之外的电极， 使其能够与外界电路进 行电连接。  The step of directly applying a power electronic package structure of the microchannel to the copper substrate: bonding the ceramic layer to the top surface of the first metal layer to form a microchannel of the cooling liquid, the top surface of the first metal layer containing the columnar array The metal layer of the structure and the liquid inlet and outlet, the size of the first metal layer is designed according to the size of the ceramic layer, the microchannel has a semi-conducting pipe structure, and the second metal layer is bonded on the top surface of the ceramic layer to form a microchannel directly a copper substrate, the second metal layer comprises a high voltage pad and a low voltage pad, and the IGBT chip is mounted on the top surface of the direct copper substrate low voltage disk, and the IGBT chip has a drain, a source and a gate, wherein the drain The conductive paste is electrically connected to the low voltage pad, and the diode chip is mounted on the top surface of the low voltage pad of the direct copper substrate. The diode chip contains a cathode and an anode, and the anode is electrically connected to the low voltage disk by a conductive adhesive. The anode of the diode chip and the source of the IGBT chip are electrically connected to the high voltage pad, and the two electrodes are electrically connected to the microchannel directly to the high voltage pad and the low voltage pad of the copper substrate by using the conductive adhesive. a plastic shell is molded on the direct copper substrate, and the top surface of the IGBT chip, the diode chip, the partial electrode and the microchannel direct copper substrate is wrapped therein, and the potting glue is injected into the shell to fix the current terminal in the extension. Electrodes outside the plastic housing allow it to be electrically connected to external circuitry.
本发明还提供了一种微通道直接敷铜基板其微通道设置在陶瓷层的结构，第一层金属 层含有液体进口孔和出口孔， 陶瓷层设有连续微槽， 第二层金属层包含低压焊盘和高压焊 盘两部分。 陶瓷层的连续沟槽的截面形状可以是三角形、 半圆形、 矩形。  The invention also provides a microchannel direct copper-clad substrate, wherein the microchannel is arranged in a ceramic layer, the first metal layer comprises a liquid inlet hole and an outlet hole, the ceramic layer is provided with a continuous micro-groove, and the second metal layer comprises Low voltage pad and high voltage pad. The cross-sectional shape of the continuous groove of the ceramic layer may be a triangle, a semicircle, or a rectangle.
所述微通道直接敷铜基板其微通道设置在第二层金属层的结构，第二层金属层的下表 面含有连续沟槽，该层设有与沟槽位置匹配的液体进出口，第二层金属层的上方为陶瓷层， 第三层金属层设置在陶瓷层上方， 第三层金属层分为高压焊盘和低压悍盘两部分的， 第二 层金属层经热压键合将第一层金属层固定在第二层金属层的下表面，从而形成冷却液的微 通道，通过常规的 DBC热压接合将陶瓷层固定在第二层金属层的上表面，通过常规的 DBC 热压接合将第三层金属层固定在陶瓷层的顶面， 从而形成第三种微通道直接敷铜基板。  The microchannel direct copper-clad substrate has a microchannel disposed on the second metal layer structure, and the lower surface of the second metal layer includes a continuous trench, the layer is provided with a liquid inlet and outlet matching the groove position, and the second layer The upper layer of the metal layer is a ceramic layer, the third metal layer is disposed above the ceramic layer, and the third metal layer is divided into a high voltage pad and a low voltage disk, and the second metal layer is thermocompression bonded. A metal layer is fixed on the lower surface of the second metal layer to form a microchannel of the cooling liquid, and the ceramic layer is fixed on the upper surface of the second metal layer by conventional DBC thermocompression bonding, by conventional DBC hot pressing Bonding secures a third layer of metal to the top surface of the ceramic layer to form a third microchannel direct copper substrate.
所述第二层金属层下表面的连续沟槽结构的截面形状可以是矩形、 半圆形、 三角形。 本发明的优点是与使用冷却板或热沉的方法相比， 本发明的冷却系统的尺寸更小， 重量更轻， 材料层数更少， 界面热阻更小， 热学性能更好， 冷却效率更高， 成本更低。 附图说明 图 1A是本发明一个实施例一的结构示意图; 图 IB是实施例一的剖面结构示意图； 图 1C是实施例一另一剖面结构示意图； 图 2A是本发明形成微通道直接敷铜基板过程的流程图； 图 2B是直接敷铜基板陶瓷层的结构示意图； 图 2C是本发明形成微通道直接敷铜基板过程的流程图； 图 3 是本发明形成微通道直接敷铜基板过程的流程图； 图 4A是本发明的实施例二的结构示意图； 图 4B是本发明的实施例二的剖面结构示意图； 图 5A是本发明的实施例二形成微通道直接敷铜基板过程的流程图； 图 5B是本发明的实施例二直接敷铜基板陶瓷层的结构示意图； 图 5C是本发明的实施例二形成微通道直接敷铜基板过程的流程图； 图 6A是本发明的实施例三的结构示意图； The cross-sectional shape of the continuous groove structure of the lower surface of the second metal layer may be rectangular, semi-circular, or triangular. An advantage of the present invention is that the cooling system of the present invention is smaller in size, lighter in weight, less in material layers, less in interface thermal resistance, better in thermal performance, and lower in cooling efficiency than a method using a cooling plate or a heat sink. Higher, lower cost. BRIEF DESCRIPTION OF DRAWINGS FIG. 1A is a schematic structural view of a first embodiment of the present invention; 1B is a cross-sectional structural view of the first embodiment; FIG. 1C is a schematic cross-sectional view of another embodiment of the present invention; FIG. 2A is a flow chart of the process for forming a microchannel direct copper substrate according to the present invention; 2C is a flow chart of a process for forming a microchannel direct copper substrate according to the present invention; FIG. 3 is a flow chart of a process for forming a microchannel direct copper substrate according to the present invention; FIG. 4A is a schematic structural view of Embodiment 2 of the present invention; 4B is a cross-sectional structural view of a second embodiment of the present invention; FIG. 5A is a flow chart showing a process of forming a microchannel direct copper substrate according to Embodiment 2 of the present invention; FIG. 5B is a second embodiment of the present invention. FIG. 5C is a flow chart showing a process of forming a microchannel direct copper substrate according to Embodiment 2 of the present invention; FIG. 6A is a schematic structural view of Embodiment 3 of the present invention;
图 6B是本发明的实施例三的剖面结构示意图； 图 7 是本发明的实施例三形成微通道直接敷铜基板过程的流程图。 6B is a schematic cross-sectional view showing a third embodiment of the present invention; and FIG. 7 is a flow chart showing a process of forming a microchannel direct copper substrate according to Embodiment 3 of the present invention.
具体实施方式 detailed description
实施例一 Embodiment 1
下面结合附图进一步说明本发明的实施例： 图 1A是本发明的实施例一结构示意图， 微通道直接敷铜基板由两层金属层和一层 陶瓷层组成。 采用微通道直接敷铜基板 102的功率电子封装结构 100被封装在塑料外 壳 104内， 微通道直接敷铜基板 102固定在内壳底面。 为了便于说明， 塑料外壳 104 以透明图展示， 图 1B和图 1C是内部结构剖面图。 如图 1B和 1C所示， 直接敷铜基板包括： 第一层金属层即底面铜层 106、 一个流 体进口 106a和一个流体出口 106b、 一层陶瓷腔体层 108和顶面铜层 1 10， 其中第二层 金属层即顶面铜层被分为高压焊盘 110a和低压焊盘 1 10b两部分。 含有被蚀刻的圆柱 状阵列结构 106c的陶瓷层被焊接在底面铜层的顶面上， 从而形成微通道。 IGBT芯片 114和二极管芯片 116通过导电胶 112被贴装在顶面铜层 110的低压焊盘 110b的顶面 上。 IGBT芯片 114的漏极和二极管芯片 118的阳极通过顶面铜层 110的低压焊盘 110b 实现电连接。 IGBT芯片 114的源极、 二极管芯片 118的阴极和高压焊盘 110a之间的 电连接通过引线 118实现。门集触点在 IGBT芯片 114的顶面上。引线端子 120a和 120b 通过导电胶 112被分别固定在顶面铜层 1 10的高压焊盘 110a和低压焊盘 110b上。 直 接敷铜基板 110的顶面铜层、 IGBT芯片 1 14、 二极管芯片 1 16、 引线 1 18和引线端子 120a和 120b的一部分在塑料外壳 104中被封装在软胶里面， 电流端子 122a和 122b延 伸至塑料壳 104之外， 从而实现功率模块与外界环境的电连接。 如图 2A、 图 2B、 图 2C是描述形成微通道直接敷铜基板 102的过程 200。 在步骤 204中， 通过蚀刻的方法将铜板 202的顶面蚀刻形成圆柱状整列结构 106c、 流体进口 106a和流体出口 106b。 本实施例的管道阵列是对齐排列。 在步骤 205中将陶瓷层 108 烧结成半封闭罩壳的形状， 如图 2B所示。 陶瓷层 108的大小是根据底面铜层 106的尺 寸来设计。 直接敷铜基板的键合是采用规范的热压键合方式， 在步骤 206中， 本实施 例釆用传统的热压焊接的方法， 将陶瓷层 108 焊接在底面铜层 106的上表面， 从而形 成流体的微通道结构。 采用同样的悍接方法， 将顶面铜层 110焊接在陶瓷层 108的顶 面上， 从而形成微通道直接敷铜基板 102。 图 3是本实施例形成微通道直接敷铜基板过程的流程图， 在步骤 302中， 通过导 电胶将 IGBT芯片 114和二极管芯片 116贴装在顶面铜层 110的低压焊盘 110b上， 从 而形成装配 304。IGBT芯片 114的漏极和二极管芯片 116的阳极通过导电胶实现电连。 在步骤 306中，将 IGBT芯片 114的源极、二极管芯片 116的阴极和顶面铜层 110的高 压焊盘 110a用三根铝引线电连,从而形成装配 308。 在步骤 310中， 利用导电胶 1 12将 引线端子 120a和 120b分别固定在顶面铜层 110的高压焊盘 110a和低压悍盘 110b上。 塑料外壳 104被模制将微通道直接敷铜基板 102上的组件封装， 外壳 104的材料可以 是任何合适的热硬性材料。 为了保护内部结构， 将软胶灌注到外壳 104内， 密封直接 敷铜基板 110的顶面铜层、 IGBT芯片 114， 二极管芯片 116， 电接线 120和电接线端 子 120a和 120b的一部分。 最后固定电流触点 122a和 122b， 实现与外部环境的电连， 从而形成电子功率封装结构 100。 The embodiment of the present invention will be further described with reference to the accompanying drawings. Fig. 1A is a schematic view showing the structure of a first embodiment of the present invention. The microchannel direct copper-clad substrate is composed of two metal layers and one ceramic layer. The power electronic package structure 100 using the microchannel direct copper substrate 102 is packaged in a plastic housing 104, and the microchannel direct copper substrate 102 is fixed to the bottom surface of the inner casing. For ease of explanation, the plastic housing 104 is shown in a transparent view, and FIGS. 1B and 1C are cross-sectional views of internal structures. As shown in FIGS. 1B and 1C, the direct copper substrate includes: a first metal layer, that is, a bottom copper layer 106, a fluid inlet 106a and a fluid outlet 106b, a ceramic cavity layer 108, and a top copper layer 10, The second metal layer, that is, the top copper layer, is divided into two parts, a high voltage pad 110a and a low voltage pad 1 10b. A ceramic layer containing the etched cylindrical array structure 106c is soldered to the top surface of the underlying copper layer to form microchannels. The IGBT chip 114 and the diode chip 116 are mounted on the top surface of the low voltage pad 110b of the top copper layer 110 through the conductive paste 112. On. The drain of the IGBT chip 114 and the anode of the diode chip 118 are electrically connected through the low voltage pad 110b of the top copper layer 110. The electrical connection between the source of the IGBT chip 114, the cathode of the diode chip 118, and the high voltage pad 110a is achieved by the leads 118. The gate contacts are on the top surface of the IGBT chip 114. The lead terminals 120a and 120b are respectively fixed to the high voltage pad 110a and the low voltage pad 110b of the top copper layer 110 by the conductive paste 112. A top copper layer of the direct copper substrate 110, an IGBT chip 114, a diode chip 1 16, a lead 18 and a portion of the lead terminals 120a and 120b are encapsulated in a soft plastic in the plastic case 104, and the current terminals 122a and 122b are extended. Out of the plastic case 104, electrical connection of the power module to the external environment is achieved. 2A, 2B, and 2C are processes 200 depicting the formation of a microchannel direct copper substrate 102. In step 204, the top surface of the copper plate 202 is etched by etching to form a cylindrical array structure 106c, a fluid inlet 106a, and a fluid outlet 106b. The pipe array of this embodiment is aligned. The ceramic layer 108 is sintered in step 205 into the shape of a semi-closed casing, as shown in Figure 2B. The size of the ceramic layer 108 is designed according to the size of the bottom copper layer 106. The bonding of the direct copper substrate is performed by a standard thermocompression bonding method. In step 206, the ceramic layer 108 is soldered to the upper surface of the bottom copper layer 106 by a conventional thermocompression bonding method. A microchannel structure that forms a fluid. The top copper layer 110 is soldered to the top surface of the ceramic layer 108 by the same splicing method to form a microchannel direct copper substrate 102. 3 is a flow chart of the process of forming a microchannel direct copper substrate in the embodiment. In step 302, the IGBT chip 114 and the diode chip 116 are mounted on the low voltage pad 110b of the top copper layer 110 through a conductive paste, thereby An assembly 304 is formed. The drain of the IGBT chip 114 and the anode of the diode chip 116 are electrically connected by a conductive paste. In step 306, the source of the IGBT chip 114, the cathode of the diode chip 116, and the high voltage pad 110a of the top copper layer 110 are electrically connected by three aluminum leads to form the assembly 308. In step 310, the lead terminals 120a and 120b are respectively fixed to the high voltage pad 110a and the low voltage disk 110b of the top copper layer 110 by the conductive paste 112. The plastic housing 104 is molded to encapsulate the microchannels directly onto the components on the copper substrate 102. The material of the housing 104 can be any suitable thermoset material. To protect the internal structure, a soft gel is poured into the outer casing 104 to seal the top copper layer of the copper-clad substrate 110, the IGBT chip 114, the diode chip 116, the electrical wiring 120, and a portion of the electrical terminals 120a and 120b. Finally, the current contacts 122a and 122b are fixed to electrically connect to the external environment to form the electronic power package structure 100.
实施例二 Embodiment 2
实施例二与实施例一相同,所不同的是微通道设置在陶瓷层上， 直接敷铜基板 402的 结构不同于图 1所示的电子功率封装结构 100中的微通道直接敷铜基板 102。微通道直接 敷铜基板 402包括三层：底面铜层 406、设有连续槽 408a的陶瓷层 408、和顶面铜层 410。 图 4A是本发明的实施例二的结构示意图， 图 4B是本发明的实施例二的剖面结构示 意图。 图 5A是实施例二形成微通道直接敷铜基板过程的流程图， 图 5B是本实施例二直 接敷铜基板陶瓷层的结构示意图， 图 5C是实施例二形成微通道直接敷铜基板过程的流程 图。 在步骤 504中蚀刻铜板 502， 形成流体进口孔 406a和出口孔 406b， 如图 5A所示， 将陶层 408烧结成图 5B所示的含有连续槽 408a结构的形状， 陶瓷层的连续槽 408a的截 面形状可以是三角形、 半圆形、 矩形。 液体的进出口孔的设计是用来匹配陶瓷层的微槽 的， 被键合在陶瓷层的底面上， 从而形成冷却液的微通道， 液体进出口的位置要与连续 槽相匹配； 在步骤 506中， 采用热压键合的方法， 将地面铜层 406作为金属盖板键合在 陶瓷层 408的表面上， 从而形成微通道结构， 将顶面铜层 410键合在陶瓷层 408的上表 面， 从而形成微通道直接敷铜基板 402。 The second embodiment is the same as the first embodiment except that the microchannel is disposed on the ceramic layer, and the structure of the direct copper substrate 402 is different from the microchannel direct copper substrate 102 in the electronic power package structure 100 shown in FIG. Microchannel direct The copper-clad substrate 402 includes three layers: a bottom copper layer 406, a ceramic layer 408 provided with a continuous trench 408a, and a top copper layer 410. 4A is a schematic structural view of a second embodiment of the present invention, and FIG. 4B is a schematic cross-sectional structural view of a second embodiment of the present invention. 5A is a flow chart showing a process of forming a microchannel direct copper substrate according to the second embodiment, FIG. 5B is a schematic structural view of a direct copper substrate ceramic layer according to the second embodiment, and FIG. 5C is a second embodiment of forming a microchannel direct copper substrate. flow chart. The copper plate 502 is etched in step 504 to form a fluid inlet aperture 406a and an exit aperture 406b. As shown in FIG. 5A, the ceramic layer 408 is sintered into the shape of the continuous trench 408a shown in FIG. 5B, the continuous trench 408a of the ceramic layer. The cross-sectional shape can be a triangle, a semicircle, or a rectangle. The inlet and outlet holes of the liquid are designed to match the microgrooves of the ceramic layer, and are bonded to the bottom surface of the ceramic layer to form a microchannel of the cooling liquid, and the position of the liquid inlet and outlet is matched with the continuous groove; In 506, a ground copper layer 406 is bonded to the surface of the ceramic layer 408 as a metal cover by a thermocompression bonding method to form a microchannel structure, and the top copper layer 410 is bonded to the ceramic layer 408. The surface, thereby forming a microchannel direct copper substrate 402.
实施例三 Embodiment 3
实施例三与实施例一相同，所不同的是微通道设置在第二层金属层的 ½构上， 直接敷 铜基板 602具有四层结构， 包括： 地面铜板 606、 具有连续沟槽 608a的第二层铜层 608、 陶瓷层 610和顶面铜层 612。 参见图 6A、 图 6B。 图 7 是实施例三形成微通道直接敷铜基板过程的流程图， 如图 7所示， 形成微通道 直接敷铜基板 602的过程 700包括： 在步骤 704中， 通过蚀刻在铜板 702上形成流体进 口孔 606a和出口孔 606b; 在步骤 708中， 在厚铜板 706的一个表面光上蚀刻形成连续沟 槽 608a， 连续沟槽 608a的截面形状为矩形或半圆形或三角形， 液体进出口的位置与沟槽 匹配； 在步骤 710中， 采用热压键合的方法， 将底面铜层 606作为金属盖板键合在第二 层铜层 608的下表面上， 从而形成微通道结构； 在步骤 714中， 采用热压键合的方法， 将装配体 712的上表面键合在陶瓷层 610的下表面上，将顶面铜层 612结合在陶瓷层 610 的上表面， 从而形成微通道直接敷铜基板 602。  Embodiment 3 is the same as Embodiment 1, except that the microchannel is disposed on the 1⁄2 structure of the second metal layer, and the direct copper substrate 602 has a four-layer structure, including: the ground copper plate 606, and the first trench 608a A two-layer copper layer 608, a ceramic layer 610, and a top copper layer 612. See Figure 6A, Figure 6B. 7 is a flow chart of a third embodiment of forming a microchannel direct copper substrate. As shown in FIG. 7, the process 700 of forming a microchannel direct copper substrate 602 includes: in step 704, forming a fluid on the copper plate 702 by etching. The inlet hole 606a and the outlet hole 606b; in step 708, a continuous groove 608a is formed on a surface of the thick copper plate 706, and the cross-sectional shape of the continuous groove 608a is rectangular or semi-circular or triangular, and the position of the liquid inlet and outlet is Trench matching; in step 710, the bottom copper layer 606 is bonded as a metal cover to the lower surface of the second copper layer 608 by a thermocompression bonding method to form a microchannel structure; The upper surface of the assembly 712 is bonded to the lower surface of the ceramic layer 610 by a thermocompression bonding method, and the top copper layer 612 is bonded to the upper surface of the ceramic layer 610 to form a microchannel direct copper substrate. 602.

Claims

权 利 要 求 书 Claim
1. 一种微通道直接敷铜基板，微通道直接敷铜基板由至少两层金属层和一层陶瓷层 组成， 其特征在于第一层金属层的顶面包含柱状整列结构、一个流体进口孔和一个 流体出口孔，陶瓷层是半封闭的罩壳结构第二层金属层被分为高压焊盘和低压焊盘 两部分。  A microchannel direct copper substrate, the microchannel direct copper substrate is composed of at least two metal layers and a ceramic layer, wherein the top surface of the first metal layer comprises a columnar array structure and a fluid inlet hole. And a fluid outlet hole, the ceramic layer is a semi-closed casing structure, and the second metal layer is divided into a high voltage pad and a low voltage pad.
2. 根据权利要求 1所述的微通道直接敷铜基板， 其特征在于微通道直接敷铜基板的 第一层金属层顶面的阵列结构的类型为圆柱形或三角柱形或方柱形或六棱柱形。  2. The microchannel direct copper substrate according to claim 1, wherein the array structure of the top surface of the first metal layer of the microchannel direct copper substrate is cylindrical or triangular or square or six. Prismatic.
3. 根据权利要求 1所述的微通道直接敷铜基板， 其特征在于微通道直接敷铜基板的 第一层金属层顶面形成的管道阵列是对齐排列或是交错排列。  3. The microchannel direct copper substrate according to claim 1, wherein the array of tubes formed on the top surface of the first metal layer of the microchannel direct copper substrate is aligned or staggered.
4. 根据权利要求 1所述的微通道直接敷铜基板， 其特征在于微通道直接敷铜基板的陶 瓷层的大小是根据第一层金属层的尺寸来设计， 陶瓷与第一层金属层的顶面相结 合， 从而形成冷却液的微通道结构。  4. The microchannel direct copper substrate according to claim 1, wherein the size of the ceramic layer of the microchannel direct copper substrate is designed according to the size of the first metal layer, and the ceramic and the first metal layer. The top surfaces are combined to form a microchannel structure for the coolant.
5. 根据权利要求 1所述的微通道直接敷铜基板， 其特征在于微通道直接敷铜基板的第 二层金属层与陶瓷层的顶面相结合。  5. The microchannel direct copper substrate according to claim 1, wherein the second metal layer of the microchannel direct copper substrate is combined with the top surface of the ceramic layer.
6. 如权利要求 1所述的微通道直接敷铜基板的功率电子封装结构， 包括： 如权利要求  6. The power electronic package structure of a microchannel direct copper substrate according to claim 1, comprising:
1所述的微通道直接敷铜基板、 二极管芯片、 IGBT芯片、 电极、 塑料外壳、 电流触 点、 灌封胶， 其特征在于二极管芯片贴装在直接敷铜基板上， 分别与基板和 IGBT 芯片电连接， IGBT芯片贴装在直接敷铜基板上， 分别与基板和二极管芯片电连接， 电极直接贴装在直接敷铜基板上， 将微通道直接敷铜基板、 二极管芯片、 IGBT芯 片和电极用塑料外壳密封， 灌封胶注入到塑料壳内， 将二极管芯片、 IGBT芯片和 电极封装， 电极延伸至塑料外壳之外， 实现内部电路和外部电路的电连接。  The microchannel direct copper substrate, the diode chip, the IGBT chip, the electrode, the plastic shell, the current contact, the potting glue, characterized in that the diode chip is mounted on the direct copper substrate, respectively, and the substrate and the IGBT chip Electrical connection, IGBT chip mounted on the direct copper substrate, respectively, electrically connected to the substrate and the diode chip, the electrode is directly mounted on the direct copper substrate, and the microchannel is directly applied to the copper substrate, the diode chip, the IGBT chip and the electrode The plastic casing is sealed, and the potting glue is injected into the plastic casing. The diode chip, the IGBT chip and the electrode package are sealed, and the electrode is extended outside the plastic casing to realize electrical connection between the internal circuit and the external circuit.
7. 根据权利要求 6所述的微通道直接敷铜基板的功率电子封装结构， 其特征在于二极 管芯片贴装在微通道直接敷铜基板低压焊盘的顶面， 二极管芯片的阳极与低压悍盘 电连接， 阴极焊线与 IGBT的源极电连接。  7. The power electronic package structure of a microchannel direct copper-clad substrate according to claim 6, wherein the diode chip is mounted on a top surface of the low-voltage pad of the microchannel direct copper-clad substrate, the anode of the diode chip and the low-voltage disk. Electrical connection, the cathode bonding wire is electrically connected to the source of the IGBT.
8. 根据权利要求 6所述的微通道直接敷铜基板的功率电子封装结构，其特征在于 IGBT 芯片贴装在微通道直接敷铜基板的顶面， IGBT芯片的源极焊线与二极管的阴极电 连接， 漏极分别与低压焊盘和门极电连接。  8. The power electronic package structure of a microchannel direct copper-clad substrate according to claim 6, wherein the IGBT chip is mounted on a top surface of the microchannel direct copper substrate, the source wire of the IGBT chip and the cathode of the diode. Electrically connected, the drain is electrically connected to the low voltage pad and the gate, respectively.
9. 根据权利要求 6所述的微通道直接敷铜基板的功率电子封装结构， 其特征在于利用 导电胶将电极分别贴装在直接敷铜基板低压焊盘和高压悍盘上。  9. The power electronic package structure of a microchannel direct copper-clad substrate according to claim 6, wherein the electrodes are respectively mounted on the direct copper-clad substrate low-voltage pad and the high-voltage disk by using a conductive paste.
10. 根据权利要求 6所述的微通道直接敷铜基板的功率电子封装结构， 其特征在于塑料 外壳将二极管芯片、 IGBT芯片、 直接敷铜基板的顶面和电极的一部分密封起来， 并向其中注入灌封胶， 电极的另一部分延伸至塑料壳之外。 10. The power electronic package structure of a microchannel direct copper substrate according to claim 6, characterized in that plastic The outer casing seals the diode chip, the IGBT chip, the top surface of the direct copper-clad substrate, and a portion of the electrode, and injects the potting compound therein, and the other portion of the electrode extends beyond the plastic case.
11. 根据权利要求 6所述的微通道直接敷铜基板的功率电子封装结构， 其特征在于至少 有两个电流触点固定在塑料外壳外部的端子上。  11. A power electronic package structure for a microchannel direct copper substrate according to claim 6, wherein at least two current contacts are attached to terminals external to the plastic housing.
12. 根据权利要求 6所述的微通道直接敷铜基板的功率电子封装结构，其特征在于 IGBT 芯片与二极管芯片之间至少需要 3根铝线来连接。  12. The power electronic package structure of a microchannel direct copper-clad substrate according to claim 6, wherein at least three aluminum wires are required to be connected between the IGBT chip and the diode chip.
13. 根据权利要求 6所述的微通道直接敷铜基板的功率电子封装结构， 其特征在于二极 管芯片与高压焊盘之间至少设有三根铝线来连接。  13. The power electronic package structure of a microchannel direct copper substrate according to claim 6, wherein at least three aluminum wires are connected between the diode chip and the high voltage pad.
14. 微通道直接敷铜基板的功率电子封装工艺， 其特征在于形成微通 ά直接敷铜基板功 率器件封装结构的步骤依次包括： 将陶瓷层粘结在第一层金属层的顶面， 形成冷却 液的微通道， 该第一层金属层的顶面含有柱状阵列结构和液体进出口的金属层， 第 一层金属层大小根据陶瓷层的尺寸设计， 微通道具有半导通管道结构，将第二层金 属层粘结在陶瓷层的顶面以形成微通道直接敷铜基板， 第二层金属层包含高压焊盘 和低压焊盘，将 IGBT芯片贴装在直接敷铜基板低压焊盘的顶面， IGBT芯片含有漏 极、 源极和门极， 其中将漏极用导电胶电连接在低压焊盘上，将二极管芯片贴装在 直接敷铜基板低压焊盘的顶面， 二极管芯片含有阴极和阳极， 将阳极用导电胶电连 接在低压悍盘上,将二极管芯片的阳极和 IGBT芯片的源极电连接在高压焊盘上，用 导电胶将两个电极分别电连接到微通道直接敷铜基板的高压焊盘和低压焊盘上，在 直接敷铜基板上模制一个塑料外壳， 将 IGBT芯片、 二极管芯片、 部分电极和微通 道直接敷铜基板的顶面包裹其中， 并往塑料外壳中注入灌封胶，将电流端子固定在 延伸到塑料外壳之外的电极， 使其能够与外界电路进行电连接。  14. A power electronic packaging process for a microchannel direct copper substrate, wherein the step of forming a microvia direct copper substrate power device package structure comprises: bonding a ceramic layer to a top surface of the first metal layer to form a microchannel of the coolant, the top surface of the first metal layer comprises a columnar array structure and a metal layer for liquid inlet and outlet, the size of the first layer of metal layer is designed according to the size of the ceramic layer, and the microchannel has a semi-conducting pipe structure, A second metal layer is bonded to the top surface of the ceramic layer to form a microchannel direct copper substrate, and the second metal layer includes a high voltage pad and a low voltage pad, and the IGBT chip is mounted on the low voltage pad of the direct copper substrate. The top surface of the IGBT chip includes a drain, a source and a gate, wherein the drain is electrically connected to the low voltage pad by a conductive paste, and the diode chip is mounted on the top surface of the low voltage pad of the direct copper substrate, and the diode chip contains Cathode and anode, the anode is electrically connected to the low voltage disk by a conductive paste, and the anode of the diode chip and the source of the IGBT chip are electrically connected to the high voltage pad, and the conductive glue is used. The two electrodes are electrically connected to the high voltage pad and the low voltage pad of the microchannel direct copper substrate, and a plastic case is molded on the direct copper substrate, and the IGBT chip, the diode chip, the partial electrode and the micro channel are directly coated with copper. The top surface of the substrate is wrapped therein, and a potting compound is injected into the plastic case to fix the current terminal to an electrode extending outside the plastic case so that it can be electrically connected to an external circuit.
15. 根据权利要求 14所述的微通道直接敷铜基板的功率电子封装工艺， 其特征在于直 接敷铜基板的键合是规范的热压键合方式  15. The power electronic packaging process for a microchannel direct copper substrate according to claim 14, wherein the bonding of the direct copper substrate is a standard thermocompression bonding method.
16. 根据权利要求 1所述的微通道直接敷铜基板， 其特征在于第一层金属层含有液体进 口孔和出口孔， 陶瓷层设有连续微槽， 第二层金属层包含低压焊盘和高压焊盘两部 分。  16. The microchannel direct copper substrate according to claim 1, wherein the first metal layer comprises a liquid inlet port and an outlet hole, the ceramic layer is provided with continuous microgrooves, and the second metal layer comprises a low voltage pad and Two parts of the high voltage pad.
17. 根据权利要求 16所述的微通道直接敷铜基板， 其特征在于陶瓷层的连续沟槽的截 面形状可以是三角形、 半圆形、 矩形。  17. The microchannel direct copper substrate according to claim 16, wherein the continuous groove of the ceramic layer has a cross-sectional shape of a triangle, a semicircle, or a rectangle.
18. 根据权利要求 16所述的微通道直接敷铜基板， 其特征在于第一层金属覆盖层的大 小是根据陶瓷层的尺寸设计的， 其液体的进出口孔的设计是用来匹配陶瓷层的微槽 的， 被键合在陶瓷层的底面上， 从而形成冷却液的微通道。 18. The microchannel direct copper substrate according to claim 16, wherein the size of the first metal covering layer is designed according to the size of the ceramic layer, and the liquid inlet and outlet holes are designed to match the ceramic layer. Micro slot , is bonded to the bottom surface of the ceramic layer to form a microchannel of the cooling liquid.
19. 根据权利要求 16所述的微通道直接敷铜基板， 其特征在于第二层金属层粘结在陶 瓷层的上表面。  19. The microchannel direct copper substrate according to claim 16, wherein the second metal layer is bonded to the upper surface of the ceramic layer.
20. 根据权利要求 16所述的微通道直接敷铜基板， 其特征在于形成微通道直接敷铜基 板步骤包括： 提供在下表面含有连续沟槽的陶瓷层、 大小根据陶瓷层的尺寸设计的 和含有与沟槽位置匹配的液体进出口的第一层金属层、 分为高压部分和低压部分的 第二层金属层； 通过热压键合或者其他可能的固定方式将第一层金属层固定在陶瓷 层的下表面， 以形成冷却液的微通道； 通过常规的热压键合的方法将第二层金属层 固定在陶瓷层的上表面， 从而形成微通道直接敷铜基板。  20. The microchannel direct copper substrate according to claim 16, wherein the step of forming the microchannel direct copper substrate comprises: providing a ceramic layer having a continuous groove on the lower surface, the size is designed according to the size of the ceramic layer, and a first metal layer of the liquid inlet and outlet matching the groove position, a second metal layer divided into a high pressure portion and a low pressure portion; the first metal layer is fixed to the ceramic by thermocompression bonding or other possible fixing means The lower surface of the layer is formed to form a microchannel of the cooling liquid; the second metal layer is fixed on the upper surface of the ceramic layer by a conventional thermocompression bonding method to form a microchannel direct copper substrate.
21. 根据权利要求 1所述的微通道直接敷铜基板， 其特征在于第一层金属层含有液体进 口孔和出口孔， 第二层金属层、 陶瓷层在一个面上含有连续的微槽结构， 还设有分 为高压焊盘和低压焊盘两部分的第三层金属层。  21. The microchannel direct copper substrate according to claim 1, wherein the first metal layer comprises a liquid inlet hole and an outlet hole, and the second metal layer and the ceramic layer have a continuous microgroove structure on one surface. There is also a third metal layer divided into a high voltage pad and a low voltage pad.
22. 根据权利要求 21所述的微通道直接敷铜基板， 其特征在于第二层金属层下表面的 连续沟槽结构的截面形状可以是矩形、 半圆形、 三角形。  22. The microchannel direct copper substrate according to claim 21, wherein the cross-sectional shape of the continuous groove structure of the lower surface of the second metal layer may be rectangular, semi-circular, or triangular.
23. 根据权利要求 21所述的微通道直接敷铜基板， 其特征在于第一层金属层的大小是 根据第二层金属层的尺寸确定， 第一层金属层的液体进出口孔要跟第二层金属层的 微槽相匹配， 第一层金属层固定在第二层金属层的下表面， 从而形成冷却液的微通 道。  23. The microchannel direct copper substrate according to claim 21, wherein the size of the first metal layer is determined according to the size of the second metal layer, and the liquid inlet and outlet holes of the first metal layer are the same as The microgrooves of the two metal layers are matched, and the first metal layer is fixed on the lower surface of the second metal layer to form a microchannel of the cooling liquid.
24. 根据权利要求 21所述的微通道直接敷铜基板， 其特征在于陶瓷层固定在第二层金 属层的上表面， 陶瓷层的大小是根据第二层金属层的尺寸确定的。  24. The microchannel direct copper substrate according to claim 21, wherein the ceramic layer is fixed on the upper surface of the second metal layer, and the size of the ceramic layer is determined according to the size of the second metal layer.
25. 根据权利要求 21所述的微通道直接敷铜基板， 其特征在于第三层金属层固定在陶 瓷层的顶面。  25. The microchannel direct copper substrate of claim 21, wherein the third metal layer is attached to the top surface of the ceramic layer.
26. 根据权利要求 21所述的微通道直接敷铜基板， 其特征在于第二层金属层的下表面 含有连续沟槽， 该层设有沟槽位置匹配的液体进出口， 第二层金属层的上方为陶瓷 层， 第三层金属层设置在陶瓷层上方， 第三层金属层分为高压焊盘和低压焊盘两部 分的， 第二层金属层经热压键合将第一层金属层固定在第二层金属层的下表面， 从 而形成冷却液的微通道， 通过常规的 DBC热压键合将陶瓷层固定在第二层金属层 的上表面， 通过常规的 DBC热压键合将第三层金属层固定在陶瓷层的顶面， 从而 形成第三种微通道直接敷铜基板。  26. The microchannel direct copper substrate according to claim 21, wherein the lower surface of the second metal layer comprises a continuous trench, the layer is provided with a liquid inlet and outlet with a matching groove position, and the second metal layer The upper layer is a ceramic layer, the third metal layer is disposed above the ceramic layer, and the third metal layer is divided into a high voltage pad and a low voltage pad. The second metal layer is thermocompression bonded to the first layer of metal. The layer is fixed on the lower surface of the second metal layer to form a microchannel of the cooling liquid, and the ceramic layer is fixed on the upper surface of the second metal layer by conventional DBC thermocompression bonding, by conventional DBC thermocompression bonding A third metal layer is fixed on the top surface of the ceramic layer to form a third microchannel direct copper substrate.
PCT/CN2011/002158 2011-12-21 2011-12-21 Microchannel direct bonded copper substrate and packaging structure and process of power device thereof WO2013091143A1 (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109244057A (en) * 2018-07-13 2019-01-18 北京大学深圳研究生院 A kind of package substrate and the cascade gallium nitride device based on substrate formation
CN109524333A (en) * 2018-12-27 2019-03-26 西安中车永电电气有限公司 A kind of high-voltage IGBT module encapsulation release liquid injection tooling
CN109599369A (en) * 2018-12-03 2019-04-09 中国工程物理研究院应用电子学研究所 A kind of the high power device encapsulating structure and method of short-time thermal
US10896865B2 (en) 2018-11-13 2021-01-19 Toyota Motor Engineering & Manufacturing North America, Inc. Power electronics modules including an integrated cooling channel extending through an electrically-conductive substrate
CN112289761A (en) * 2020-10-28 2021-01-29 湖南国芯半导体科技有限公司 Power module packaging structure and manufacturing method thereof
CN113327904A (en) * 2021-04-29 2021-08-31 中国电子科技集团公司第二十九研究所 Double-sided efficient heat dissipation airtight packaging structure and preparation method thereof
CN114284857A (en) * 2021-11-25 2022-04-05 佛山华智新材料有限公司 Secondary heat sink and liquid cooling heat sink integration method, integrated heat sink and application
EP4322212A1 (en) * 2022-08-08 2024-02-14 Huawei Digital Power Technologies Co., Ltd. Power module, inverter, and vehicle

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108321134A (en) * 2018-04-09 2018-07-24 黄山宝霓二维新材科技有限公司 The encapsulating structure and processing technology of the plastic sealed IPM modules of high power density
CN111384006A (en) * 2018-12-29 2020-07-07 中兴通讯股份有限公司 Heat radiation structure
CN116705734B (en) * 2023-08-03 2023-09-29 湖南大学 Self-driven heat dissipation structure of power module

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1558448A (en) * 2004-02-06 2004-12-29 中国科学院广州能源研究所 Silicon based micro passage heat exchanger
CN1665003A (en) * 2005-03-14 2005-09-07 西安交通大学 Method for making crimping interconnection technology based power electronic integrated module
JP2007012722A (en) * 2005-06-28 2007-01-18 Honda Motor Co Ltd Power semiconductor module
CN201117676Y (en) * 2007-08-17 2008-09-17 广东昭信光电科技有限公司 Integrated microstructure high power light-emitting diode packaging structure
CN201845769U (en) * 2010-11-04 2011-05-25 嘉兴斯达微电子有限公司 Compact power module
CN102074541A (en) * 2010-11-26 2011-05-25 天水华天科技股份有限公司 Carrier-free pin-free grid-array IC (Integrated Circuit) chip packaging part and production method thereof
CN102280540A (en) * 2011-08-18 2011-12-14 上海亚明灯泡厂有限公司 Light emitting diode (LED) module with microchannel radiator and method for making LED module

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61104645A (en) * 1984-10-29 1986-05-22 Hitachi Ltd Cooler and manufacture thereof
JP4312339B2 (en) * 2000-02-24 2009-08-12 ナブテスコ株式会社 Heat transfer device with meandering passage
JP2007294891A (en) * 2006-03-30 2007-11-08 Dowa Metaltech Kk Heat sink

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1558448A (en) * 2004-02-06 2004-12-29 中国科学院广州能源研究所 Silicon based micro passage heat exchanger
CN1665003A (en) * 2005-03-14 2005-09-07 西安交通大学 Method for making crimping interconnection technology based power electronic integrated module
JP2007012722A (en) * 2005-06-28 2007-01-18 Honda Motor Co Ltd Power semiconductor module
CN201117676Y (en) * 2007-08-17 2008-09-17 广东昭信光电科技有限公司 Integrated microstructure high power light-emitting diode packaging structure
CN201845769U (en) * 2010-11-04 2011-05-25 嘉兴斯达微电子有限公司 Compact power module
CN102074541A (en) * 2010-11-26 2011-05-25 天水华天科技股份有限公司 Carrier-free pin-free grid-array IC (Integrated Circuit) chip packaging part and production method thereof
CN102280540A (en) * 2011-08-18 2011-12-14 上海亚明灯泡厂有限公司 Light emitting diode (LED) module with microchannel radiator and method for making LED module

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109244057A (en) * 2018-07-13 2019-01-18 北京大学深圳研究生院 A kind of package substrate and the cascade gallium nitride device based on substrate formation
US10896865B2 (en) 2018-11-13 2021-01-19 Toyota Motor Engineering & Manufacturing North America, Inc. Power electronics modules including an integrated cooling channel extending through an electrically-conductive substrate
CN109599369A (en) * 2018-12-03 2019-04-09 中国工程物理研究院应用电子学研究所 A kind of the high power device encapsulating structure and method of short-time thermal
CN109524333A (en) * 2018-12-27 2019-03-26 西安中车永电电气有限公司 A kind of high-voltage IGBT module encapsulation release liquid injection tooling
CN109524333B (en) * 2018-12-27 2024-03-26 西安中车永电电气有限公司 Release liquid injection tool for packaging high-voltage IGBT module
CN112289761A (en) * 2020-10-28 2021-01-29 湖南国芯半导体科技有限公司 Power module packaging structure and manufacturing method thereof
CN113327904A (en) * 2021-04-29 2021-08-31 中国电子科技集团公司第二十九研究所 Double-sided efficient heat dissipation airtight packaging structure and preparation method thereof
CN113327904B (en) * 2021-04-29 2023-06-02 中国电子科技集团公司第二十九研究所 Double-sided efficient heat-dissipation airtight packaging structure and preparation method thereof
CN114284857A (en) * 2021-11-25 2022-04-05 佛山华智新材料有限公司 Secondary heat sink and liquid cooling heat sink integration method, integrated heat sink and application
CN114284857B (en) * 2021-11-25 2023-11-17 佛山华智新材料有限公司 Method for integrating secondary heat sink and liquid cooling heat sink, integrated heat sink and application
EP4322212A1 (en) * 2022-08-08 2024-02-14 Huawei Digital Power Technologies Co., Ltd. Power module, inverter, and vehicle

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