CN1558448A - Silicon based micro passage heat exchanger - Google Patents
Silicon based micro passage heat exchanger Download PDFInfo
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- CN1558448A CN1558448A CNA2004100152867A CN200410015286A CN1558448A CN 1558448 A CN1558448 A CN 1558448A CN A2004100152867 A CNA2004100152867 A CN A2004100152867A CN 200410015286 A CN200410015286 A CN 200410015286A CN 1558448 A CN1558448 A CN 1558448A
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Abstract
The invention discloses a silicon based micro passage heat exchanger for the heat-sink cooling of high heat flow density electronic components, wherein a plurality of micro passages composed of multiple longitudinal passages along the cooling liquid flow direction and multiple transverse micro passages spaced by a predetermined distance along the direction perpendicular to the flow direction are etched on the silicon substrates of the semiconductor, the longitudinal micro passages and the transverse passages forming crossing micro passage array, and packaging the micro passages with heat resistant glass. The invention can be applied to link the micro pump, connecting pipe with the silicon based micro passage heat exchanger so as to form a forced-circulation return circuit.
Description
Technical field
The present invention relates to a kind of micro channel heat exchanger of the heat radiation cooling device as electronic devices and components.Silicon substrate microchannel heat exchanger especially for the heat radiation cooling device of the integrated IC electronic devices and components of high heat flux.
Background technology
In recent years, along with developing rapidly of information industry, the transistor integrated level improves greatly, and the unit are density of heat flow rate also improves thereupon, thereby the electronic element radiating technology becomes the bottleneck of the information industry development, and the electronic element radiating technology becomes an important branch of Electronic Packaging technology.Give suitable concern to the electronic element radiating technology abroad, and formed the novel crossed subject of electronics and machinery.
Micro channel heat sinks on the cooling high heat flux electronic component and has obtained extensive use.The structure that general silicon substrate microchannel is heat sink is: corrode some rectangle grooves with chemical method on the substrate of semiconductor silicon, constitute the cooling fluid microchannel with the cover plate coupling, the microchannel forms coolant circuit with extraneous the connection.The heat that electronic devices and components produce is transmitted to heat sink by binder course, taken away by the cooling fluid that flows in the microchannel and reach purpose to cooling electronic component.The shortcoming that existing silicon substrate microchannel is heat sink is: silicon substrate microchannel adopts the parallel microchannels array mostly, after fluid enters the microchannel, carry out the development of flow boundary layer and thermal boundary layer simultaneously, also do not reach abundant development zone at thermal boundary layer, thermal transmission coefficient and nusselt number are all bigger, but along with the expansion of flowing, thermal transmission coefficient and nusselt number descend rapidly, thereby the heat sink cooling heat dissipation effect of the silicon substrate microchannel of this parallel microchannels array structure is restricted.
Summary of the invention
The objective of the invention is to propose a kind of heat sink existing shortcoming of silicon substrate microchannel that can avoid above-mentioned existing parallel microchannels array structure, can improve the silicon substrate microchannel heat exchanger of cooling heat dissipation effect, promptly silicon substrate microchannel is heat sink.
Purpose of the present invention can be achieved by the following technical programs: in etching on the semiconductor silicon substrate by many many microchannels that horizontal microchannel constitutes that have certain space distance along vertical microchannel of coolant flow direction with on perpendicular to flow direction, said vertical microchannel and horizontal microchannel form crisscross micro channel array, and encapsulate the microchannel with heat resistant glass.Promptly on the substrate of semiconductor silicon, process many vertical microchannels along coolant flow direction by etch process, simultaneously on perpendicular to flow direction, every horizontal microchannel that processes separated by a distance, form crisscross micro channel array, after micro channel array formed, the surface that is sealed on silicon chip with heat resistant glass encapsulated the microchannel.The encapsulation of heat resistant glass and silicon chip can be adopted the high-voltage electrostatic field bonding techniques.
In general, its microchannel hydraulic diameter (D) can be between 1 micron to 2 millimeters, but when hydraulic diameter during less than 100 microns, the microchannel is very easily stopped up, between so the microchannel hydraulic diameter is recommended to adopt 100 microns to 2 millimeters, L/D=10～6000, wherein L is vertical microchannel total length of silicon substrate microchannel heat exchanger, and the hydraulic diameter of general horizontal microchannel is at least 2-3 times of vertical microchannel hydraulic diameter, L
1/ D=10～60, wherein L
1Spacing for horizontal microchannel.Vertically the number of microchannel is between 1～1000 scope.
In fact silicon substrate microchannel heat exchanger of the present invention becomes a kind of boundary layer interrupt-type microfluid MEMS (microelectromechanical systems) heat exchanger, has the function of enhanced heat exchange, and its enhanced heat exchange operation principle can be accomplished by following process.After fluid arrived first section vertical micro channel array end, the boundary layer did not also reach abundant development, and nusselt number is higher, enters first horizontal microchannel then.This horizontal microchannel is equivalent to a header, has interrupted the continuation development in fluid thermal boundary layer.After fluid enters this first header, redistribute and enter second section vertical microchannel, thermal boundary layer begins to develop again from first horizontal microchannel, and nusselt number is decayed with flow direction with very high value again.When also no show fully develops in the fluid thermal boundary layer, enter next laterally microchannel (header) again, and enter vertically microchannel of next section.Like this, by horizontal microchannel is set off and on, periodically interrupt the development of thermal boundary layer, making flows is among the thermal boundary layer development all the time, and can not reach abundant development.Thereby nusselt number is in very high value all the time, and making conducts heat is strengthened greatly, as shown in Figure 4.As seen from the above analysis, the present invention has made full use of thermal boundary layer has very high nusselt number among development the principles of science, thereby by streamwise horizontal microchannel (header) is set off and on and intermittently interrupts thermal boundary layer, can improve nusselt number on the whole greatly, reach the purpose of augmentation of heat transfer.
Different with other augmentation of heat transfer approach, thermal boundary layer interrupt-type MEMS heat exchanger of the present invention under same heating power and flow, augmentation of heat transfer greatly, and can reduce resistance.Though other conventional strengthening and heat transferring device is augmentation of heat transfer to a certain extent, great majority will be cost to increase resistance.
Use in the course of work of silicon substrate microchannel heat exchanger of the present invention as the heat radiation cooling device of electronic devices and components, with Micropump, tube connector and silicon substrate microchannel heat exchanger of the present invention link together, and form a forced circulation loop.Silicon substrate microchannel heat exchanger of the present invention can integrate with other IC element, also can make the silicon substrate microchannel heat exchanger separately, and silicon substrate microchannel heat exchanger and other IC chip are consolidated.
Description of drawings
Fig. 1 is the structural representation of silicon substrate microchannel heat exchanger of the present invention;
Fig. 2 is the A-A cutaway view of Fig. 1 (integral body);
Fig. 3 is the B-B cutaway view of Fig. 1 (integral body);
Fig. 4 is the nusselt number of common micro channel array and the staggered micro channel array of the present invention;
Fig. 5 is the occupation mode of a kind of silicon substrate microchannel heat exchanger of the present invention;
Fig. 6 is the occupation mode of another kind of silicon substrate microchannel heat exchanger of the present invention.
Embodiment
Embodiment one
The structure of this silicon substrate microchannel heat exchanger is shown in Fig. 1～3, process many parallel vertical microchannels 3 with etch process in semiconductor silicon substrate 2 upper edge coolant flow direction, its hydraulic diameter D is 0.1mm, input/output port is reserved at two ends at vertical passage, on perpendicular to flow direction, process a horizontal microchannel 4 every 3mm, its hydraulic diameter is 0.3mm, forms crisscross micro channel array.After micro channel array forms, adopt the high-voltage electrostatic field bonding techniques that silicon chip upper surface and heat resistant glass 1 bonding are encapsulated micro channel array, promptly finish the making of this silicon substrate microchannel heat exchanger.
This silicon substrate microchannel heat exchanger as the occupation mode of the heat radiation cooling device of electronic devices and components as shown in Figure 5, with Micropump 8, tube connector 7 links together with silicon substrate microchannel heat exchanger 5 of the present invention, forms a forced circulation loop.
It is L that Fig. 4 demonstrates in vertical passage length, and hydraulic diameter D is the common micro channel array of 0.1mm and the nusselt number comparison curves of the staggered micro channel array of the present invention.
Embodiment two
The application example of present embodiment for silicon substrate microchannel heat exchanger 5 of the present invention and other IC chips 6 are integrated, wherein the micro channel array structure in the silicon substrate microchannel heat exchanger 5 is identical with embodiment one.
Claims (4)
1. silicon substrate microchannel heat exchanger, etching has the microchannel on the semiconductor silicon substrate, encapsulate with heat resistant glass on the microchannel, it is characterized in that said microchannel is made of many many horizontal microchannels (4) that have certain space distance along vertical microchannel (3) of coolant flow direction with on perpendicular to flow direction, vertically microchannel (3) and horizontal microchannel (4) form crisscross micro channel array.
2. silicon substrate microchannel heat exchanger according to claim 1, the hydraulic diameter that it is characterized in that said microchannel is 0.1～2mm.
3. silicon substrate microchannel heat exchanger according to claim 1 is characterized in that in the said micro channel array, and the hydraulic diameter of horizontal microchannel (4) is 2～3 times of vertical microchannel (3).
4. silicon substrate microchannel heat exchanger according to claim 1 is characterized in that said silicon substrate microchannel heat exchanger and other IC elements integrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410015286 CN1288752C (en) | 2004-02-06 | 2004-02-06 | Silicon based micro passage heat exchanger |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410015286 CN1288752C (en) | 2004-02-06 | 2004-02-06 | Silicon based micro passage heat exchanger |
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| CN1558448A true CN1558448A (en) | 2004-12-29 |
| CN1288752C CN1288752C (en) | 2006-12-06 |
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| CN 200410015286 Expired - Fee Related CN1288752C (en) | 2004-02-06 | 2004-02-06 | Silicon based micro passage heat exchanger |
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| CN100342529C (en) * | 2005-11-10 | 2007-10-10 | 上海交通大学 | Micropassage type radiator based on diamond film |
| CN101990391A (en) * | 2009-07-31 | 2011-03-23 | 通用电气公司 | Cooling system and method for current carrying conductor |
| CN101667561B (en) * | 2009-09-04 | 2012-05-23 | 厦门大学 | Silicon-based vapor-liquid phase separating heat radiation chip and preparation method thereof |
| WO2013091143A1 (en) * | 2011-12-21 | 2013-06-27 | 武汉飞恩微电子有限公司 | Microchannel direct bonded copper substrate and packaging structure and process of power device thereof |
| CN103826422A (en) * | 2014-02-13 | 2014-05-28 | 中国科学院工程热物理研究所 | Microchannel cooling device |
| CN103839905A (en) * | 2014-01-17 | 2014-06-04 | 华南理工大学 | Silicon substrate micro-channel heat exchanger with electric fluid power micro-pump and manufacturing method thereof |
| CN104154777A (en) * | 2014-08-01 | 2014-11-19 | 厦门大学 | Micro-channel heat exchanger with staggered inner groove structure and manufacturing method of micro-channel heat exchanger |
| WO2016091486A1 (en) * | 2014-12-12 | 2016-06-16 | Asml Netherlands B.V. | Reflector |
| CN105865089A (en) * | 2016-04-19 | 2016-08-17 | 华北电力大学 | Pin-fin wall surface micro-channel heat exchanger |
| CN106785823A (en) * | 2017-03-24 | 2017-05-31 | 武汉大学 | A kind of disturbed flow type microchannel heat sink for high-capacity optical fiber laser |
| CN106895725A (en) * | 2017-03-09 | 2017-06-27 | 中国科学院上海高等研究院 | A kind of printed circuit board fused salt heat exchanging device of doubling plate arrangement |
| CN108225079A (en) * | 2017-12-26 | 2018-06-29 | 华北电力大学 | A kind of non-homogeneous wetability silicon substrate microchannel phase-change heat-exchanger of top unicom |
| CN108682660A (en) * | 2018-05-18 | 2018-10-19 | 中国电子科技集团公司第二十九研究所 | A kind of miniature cooling unit and its integrated approach and device |
| CN108735693A (en) * | 2018-04-13 | 2018-11-02 | 北京大学 | The compound pinboard of high-cooling property silicon/glass and its manufacturing method |
| CN109378352A (en) * | 2018-09-06 | 2019-02-22 | 山东航天电子技术研究所 | A kind of photocell microchannel radiator |
| CN109979900A (en) * | 2019-04-15 | 2019-07-05 | 北京工业大学 | A kind of microchannel of GaN HEMT device substrate grade-nanoporous composite construction evaporator |
| CN110220402A (en) * | 2019-05-30 | 2019-09-10 | 哈尔滨工业大学（深圳） | It is a kind of with micropin rib-nanowire structure micro-channel heat exchanger and its manufacturing method |
| TWI687642B (en) * | 2018-03-07 | 2020-03-11 | 宏碁股份有限公司 | Cycling heat dissipation module |
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| CN112097545A (en) * | 2020-07-28 | 2020-12-18 | 厦门大学 | Intelligent thin-channel heat exchanger with built-in memory alloy spring |
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2004
- 2004-02-06 CN CN 200410015286 patent/CN1288752C/en not_active Expired - Fee Related
Cited By (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100342529C (en) * | 2005-11-10 | 2007-10-10 | 上海交通大学 | Micropassage type radiator based on diamond film |
| CN101990391A (en) * | 2009-07-31 | 2011-03-23 | 通用电气公司 | Cooling system and method for current carrying conductor |
| CN101667561B (en) * | 2009-09-04 | 2012-05-23 | 厦门大学 | Silicon-based vapor-liquid phase separating heat radiation chip and preparation method thereof |
| WO2013091143A1 (en) * | 2011-12-21 | 2013-06-27 | 武汉飞恩微电子有限公司 | Microchannel direct bonded copper substrate and packaging structure and process of power device thereof |
| CN103839905B (en) * | 2014-01-17 | 2016-10-05 | 华南理工大学 | There is silicon substrate microchannel heat exchanger and the manufacture method thereof of electrohydrodynamic Micropump |
| CN103839905A (en) * | 2014-01-17 | 2014-06-04 | 华南理工大学 | Silicon substrate micro-channel heat exchanger with electric fluid power micro-pump and manufacturing method thereof |
| CN103826422A (en) * | 2014-02-13 | 2014-05-28 | 中国科学院工程热物理研究所 | Microchannel cooling device |
| CN104154777A (en) * | 2014-08-01 | 2014-11-19 | 厦门大学 | Micro-channel heat exchanger with staggered inner groove structure and manufacturing method of micro-channel heat exchanger |
| CN107003621A (en) * | 2014-12-12 | 2017-08-01 | Asml荷兰有限公司 | Reflector |
| US10216101B2 (en) | 2014-12-12 | 2019-02-26 | Asml Netherlands B.V. | Reflector |
| JP2017538962A (en) * | 2014-12-12 | 2017-12-28 | エーエスエムエル ネザーランズ ビー．ブイ． | Reflector |
| WO2016091486A1 (en) * | 2014-12-12 | 2016-06-16 | Asml Netherlands B.V. | Reflector |
| CN107003621B (en) * | 2014-12-12 | 2019-01-11 | Asml荷兰有限公司 | reflector |
| CN105865089A (en) * | 2016-04-19 | 2016-08-17 | 华北电力大学 | Pin-fin wall surface micro-channel heat exchanger |
| CN105865089B (en) * | 2016-04-19 | 2018-05-25 | 华北电力大学 | A kind of pin rib wall surface micro-channel heat exchanger |
| CN106895725A (en) * | 2017-03-09 | 2017-06-27 | 中国科学院上海高等研究院 | A kind of printed circuit board fused salt heat exchanging device of doubling plate arrangement |
| CN106895725B (en) * | 2017-03-09 | 2020-02-07 | 中国科学院上海高等研究院 | Printed circuit board formula fused salt heat exchanger that double-deck board was arranged |
| CN106785823A (en) * | 2017-03-24 | 2017-05-31 | 武汉大学 | A kind of disturbed flow type microchannel heat sink for high-capacity optical fiber laser |
| CN108225079A (en) * | 2017-12-26 | 2018-06-29 | 华北电力大学 | A kind of non-homogeneous wetability silicon substrate microchannel phase-change heat-exchanger of top unicom |
| TWI687642B (en) * | 2018-03-07 | 2020-03-11 | 宏碁股份有限公司 | Cycling heat dissipation module |
| US10996006B2 (en) | 2018-03-07 | 2021-05-04 | Acer Incorporated | Cycling heat dissipation module |
| CN108735693B (en) * | 2018-04-13 | 2020-05-22 | 北京大学 | High-heat-dissipation silicon/glass composite adapter plate and manufacturing method thereof |
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| CN109979900B (en) * | 2019-04-15 | 2024-06-04 | 北京工业大学 | Micro-channel-nano porous composite structure evaporator of GaN HEMT device substrate level |
| CN109979900A (en) * | 2019-04-15 | 2019-07-05 | 北京工业大学 | A kind of microchannel of GaN HEMT device substrate grade-nanoporous composite construction evaporator |
| CN110220402A (en) * | 2019-05-30 | 2019-09-10 | 哈尔滨工业大学（深圳） | It is a kind of with micropin rib-nanowire structure micro-channel heat exchanger and its manufacturing method |
| CN111572821A (en) * | 2020-05-08 | 2020-08-25 | 清华大学 | Thermal protection wall plate, plate-shaped thermal protection system and annular thermal protection system |
| CN112097545A (en) * | 2020-07-28 | 2020-12-18 | 厦门大学 | Intelligent thin-channel heat exchanger with built-in memory alloy spring |
| CN111968944A (en) * | 2020-08-24 | 2020-11-20 | 浙江集迈科微电子有限公司 | Ultrathin stacking process for radio frequency module |
| CN113148940B (en) * | 2021-01-15 | 2023-06-16 | 哈尔滨工业大学（深圳） | Microchannel radiator with comb-shaped baffling convex structure and preparation method thereof |
| CN113148940A (en) * | 2021-01-15 | 2021-07-23 | 哈尔滨工业大学（深圳） | Microchannel radiator with comb-shaped baffling convex structure and preparation method thereof |
| CN115070639A (en) * | 2021-03-12 | 2022-09-20 | 英业达科技有限公司 | Jig tool |
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| CN1288752C (en) | 2006-12-06 |
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