CN101667561B - Silicon-based vapor-liquid phase separating heat radiation chip and preparation method thereof - Google Patents
Silicon-based vapor-liquid phase separating heat radiation chip and preparation method thereof Download PDFInfo
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Abstract
A silicon-based vapor-liquid phase separating heat radiation chip and a preparation method thereof relate to a heat radiation chip of electronic components. The silicon-based vapor-liquid phase separating heat radiation chip and the preparation method thereof are provided to overcome the disadvantages of a silicon-based radiator and improve heat radiation efficiency of the silicon-based radiator. The heat radiation chip is in an upper and lower-layer structure, and is provided with an upper silicon slice and a lower silicon slice respectively, wherein the upper silicon slice is provided with a cooling liquid loading port, a liquid vaporizer and a gas microchannel; and the lower silicon slice is provided with a cooling liquid storage tank and a liquid microchannel. The preparation method has the following steps: 1), processing the front structure of the upper silicon slice; 2), processing the back structure of the upper silicon slice; 3), processing the lower silicon slice; and 4) aligning the upper silicon slice and the lower silicon slice for bonding.
Description
Technical field
The present invention relates to a kind of heat radiation chip of electronic devices and components, particularly relate to a kind of silicon-based vapor-liquid phase separating heat radiation chip and preparation method thereof.
Background technology
Along with the high speed development of microelectric technique, the integrated level of chip is increasingly high, and performance is also more and more stronger, and it finally causes the power consumption on the unit are sharply to increase, thereby has produced fatal high heat flux problem.The heat dissipation problem of high heat flux chip has become the bottleneck of restricting current highly integrated chip technical development, and the solution of chip cooling problem is all directly depended in the raising of the improvement of electronic devices and components reliability, the increase of power capacity, integrated level and the microminaturization of structure etc.The based semiconductor micro-processing technology utilizes the minitype radiator of silicon making on the high heat flux electronic devices and components, to obtain extensive use at present; Structure is for to process the microfluid groove at a silicon chip as the one of which; With another substrate bonding, reserve the import and export of microfluid simultaneously then.Microfluid circulates in the silicon chip groove through the actuating force of external pump, constantly takes away suction from the heat energy of the electronic devices and components of bottom simultaneously.
Mainly there is following shortcoming in existing silica-based radiator:
1. in theory, the hydraulic diameter of little groove is more little, and the heat-sinking capability of silica-based radiator is strong more.When following, just very easily stop up to 100 μ m but the hydraulic diameter of the little groove of existing silica-based radiator is little.This mainly be microfluid when in little groove, flowing with the boiling vaporization, the bubble of generation has increased the resistance that fluid flows.
2. existing silica-based radiator need be set up structures such as Micropump, little valve and drive microfluid and circulate, and so just makes that the structure of radiator is more complicated, is unfavorable for microminiaturization.In addition, Micropump also needs extra driven by energy, is unfavorable for environmental protection.
Publication number is that the application for a patent for invention of CN1671019 discloses a kind of back cooling type high-power semiconductor laser micro-channel heat sink structure, comprises microchannel part and Inlet and outlet water base.Method is with high-thermal conductive metal materials processing microchannel frame; The microchannel idiosome that constitutes by semicircle column type groove and microchannel district; Comprise the pipeline and the passage aisle district of intercommunication with high-thermal conductive metal material preparation Inlet and outlet water base, with microchannel idiosome, microchannel frame and the assembling of Inlet and outlet water base.The sidewall of this invention microchannel and microchannel roof are integrated, and the additional thermal resistance of avoiding introducing when hierarchy connects in the background technology has improved device integral heat sink ability; Adopt current 90 degree to turn back when getting into the microchannel district,, greatly reduce the current partial drop of pressure, improved heat sink overall performance with circular arc type incision microchannel district mode; In heat sink overall structure connection procedure, the welding that relates to zone, heat sink microchannel has only bottom surface, a microchannel, greatly reduces the impaired probability of MCA, has simplified technology difficulty and cost of manufacture.
Publication number is that the application for a patent for invention of CN1558448 discloses a kind of silicon substrate microchannel heat exchanger that is used for the heat radiation cooling of high heat flux electronic devices and components; In etching on the semiconductor silicon substrate by many many microchannels that horizontal microchannel constitutes that have certain space distance along vertical microchannel of coolant flow direction with on perpendicular to flow direction; Vertically the microchannel forms crisscross micro channel array with horizontal microchannel, and encapsulates the microchannel with heat resistant glass.With Micropump, tube connector and silicon substrate microchannel heat exchanger linked together, and formed a forced circulation loop when use should be invented.The silicon substrate microchannel heat exchanger of this invention can integrate with other IC element, also can make the silicon substrate microchannel heat exchanger separately.
Publication number is that the application for a patent for invention of CN1529360 discloses a kind of heat radiation cooling micro high efficiency self-loopa electronics cooler that is used for the high heat flux electronic devices and components; Comprise a micro-channel evaporator and a condenser; Described micro-channel evaporator has the metal base of a high thermal conductivity coefficient; Along being laid with the microchannel that is enclosed in the base body in this base plane scope; The pass through steam pipe and liquid line and condenser of the microchannel of this micro-channel evaporator are concatenated into a unidirectional circulation circuit, and micro-channel evaporator is in the locus under the condenser, and the hydraulic fluid that fills in the loop is circulated in the loop.The electronic cooler of this invention relies on the heat drive hydraulic fluid of heat-generating electronic elements (chip) in the loop that micro-channel evaporator, steam pipe, condenser and liquid line constituted, to circulate; And need not rotatable parts such as mechanical pump; Thereby make apparatus structure compact, simple, noiselessness, shared volume is little; It is efficient to conduct heat, and has the good ratio of performance to price.
Notification number is that the utility model patent of CN2636418 provides a kind of pulse thermal tube electronic components and parts heat radiation cooler that can be used for various components and parts heat radiation coolings.Its structure comprises a heat dissipation metal contact plate; Be used for being connected with the electronic devices and components contact that needs cooling heat dissipation; This heat dissipation metal contact plate is provided with the pulse heat pipe framework that is made up of many circles capillary metal tube; In said many circle capillary metal tubes, have liquid under the state of vacuumizing, to be encapsulated into the segment space in the capillary metal tube, these liquid can form vapour bullet and liquid bullet alternately in the capillary metal tube, thereby constitute described pulse heat pipe.This utility model has high heat transfer efficiency and heat-sinking capability, is applicable to the cooling electronic components heating module, like transistor, semiconductor, silicon controlled rectifier, power model etc.
Publication number is that the application for a patent for invention of CN1507039 discloses a kind of heat radiation cooling device that can be used as electronic devices and components, drives heat exchanger especially for the heat of the heat radiation cooling device of high heat flux electronic devices and components.Whole heat exchanger apparatus comprises micro channel heat exchanger, two little check-valves (exporting little check-valves and the little check-valves of inlet) and receivers with unidirectional conducting function; Said micro channel heat exchanger has a metal base that high thermal conductivity coefficient is arranged; On the plane of this pedestal, be laid with the microchannel that is enclosed in the base body; This heat drive heat exchanger by the microchannel of receiver, enter the mouth little check-valves, micro channel heat exchanger, export little check-valves, the order that returns receiver is concatenated into a unidirectional circulation circuit with pipeline, and the liquid working substance that fills in the loop is circulated in the loop.This heat drives heat exchanger can be suitable for calorific intensity height such as the interior electronic chip of cabinet, and the very restricted occasion of volume.As be applied in the computer chip heat radiation.
Notification number is that the patent of invention of CN1936412 provides a kind of and can satisfy the microfluidic device light weight, the self-boosted liquid-supplying system of the little requirement of power consumption.Comprise fluid storage tank, gas generator, pressure sensor and pressure controller, fluid storage tank is communicated with through pipeline with gas generator, and said pipeline is communicated with pressure sensor, and pressure controller is connected with gas generator with pressure sensor through circuit; Gas generator comprises closed container, is provided with the powder charge bucket in the closed container, and the Solid-state Chemistry medicine is housed in the powder charge bucket, and heater closely contacts the Solid-state Chemistry medicine, and the power lead of heater is drawn out to the closed container outside and connects pressure controller.Gas generator uses electric heater that Solid-state Chemistry medicine heating and decomposition is produced gas.Pressed gas is pressed into fluid device with required liquid, reaches the purpose of feed flow.Light weight of the present invention, power consumption is little, easy to use, can satisfy the requirement of microfluidic device development, has the applications well prospect.
Summary of the invention
The present invention aims to provide a kind of shortcoming that can overcome above silica-based radiator, improves silicon-based vapor-liquid phase separating heat radiation chip of silica-based radiator heat-dissipation usefulness and preparation method thereof.
Silicon-based vapor-liquid phase separating heat radiation chip according to the invention is a double-layer structure up and down; Be respectively silicon chip and lower silicon slice; On last silicon chip, be provided with cooling liquid load ports, vaporizing liquid chamber and gas microchannel; The silicon chip middle part is located in the vaporizing liquid chamber, and the gas microchannel is located at the outside of vaporizing liquid chamber and is communicated with the gas microchannel, and the cooling liquid load ports is located at both sides, vaporizing liquid chamber; On lower silicon slice, be provided with cooling liquid storage tank and fluid microchannels, fluid microchannels is located in the cooling liquid storage tank; Last silicon chip is aimed at bonding with lower silicon slice through the silicon-silicon bond technology of closing and is formed chip integral body.
Cooling liquid is through the notch of cooling liquid load ports introducing cooling liquid storage tank, because capillary hydrophilic interaction, cooling liquid can be packed into cooling liquid storage tank and fluid microchannels voluntarily; Owing to capillary hydrophobic effect terminates in vaporizing liquid chamber and gas microchannel, seal the cooling liquid load ports at last simultaneously.
Said levels structure can have many group levels structures.
Said cooling liquid can be mixture, acetone, freon, similar freon material, the ammoniacal liquor of water, ethanol, ethanol and water or the aqueous solution that contains various metal nanoparticles etc.
Said gas microchannel can be one group of parallel little raceway groove that certain distance is arranged each other, and the size of said little raceway groove is preferably width 1 μ m～1mm, interval 1 μ m～1mm, length 100 μ m～5cm, the degree of depth 1 μ m～1mm.
Said cooling liquid storage tank is preferably annular little raceway groove, and the size of the little raceway groove of said annular is preferably width 50 μ m～5cm, length 100 μ m～5cm, the degree of depth 1 μ m～1mm.
Said fluid microchannels can be one group of parallel little raceway groove that certain distance is arranged each other, and the size of said little raceway groove is preferably width 1 μ m～1mm, interval 1 μ m～1mm, length 100 μ m～5cm, the degree of depth 1 μ m～1mm.
Said vaporizing liquid chamber can be located at fluid microchannels directly over.
The area of said vaporizing liquid chamber is more preferably greater than the gross area of fluid microchannels.
Said gas microchannel can intersect the top that is located at the cooling liquid storage tank.
Said gas microchannel communicates with the vaporizing liquid chamber and cross-distribution.
Said cooling liquid storage tank communicates with fluid microchannels and annular spread.
The surface characteristics of the surface characteristics of said cooling liquid storage tank and fluid microchannels and supernatant liquid vaporizer and gas microchannel is opposite; Such as when cooling liquid is water; The surface characteristics of cooling liquid storage tank and fluid microchannels shows as hydrophilic, and the surface characteristics of supernatant liquid vaporizer and gas microchannel shows as hydrophobic.
The preparation method of silicon-based vapor-liquid phase separating heat radiation chip according to the invention may further comprise the steps:
1) the upward processing of silicon chip Facad structure
(1) will go up silicon chip and clean the back oven dry;
(2) at last silicon chip surface spin coating photoresist layer;
(3) utilize the pattern of mask exposure and develop liquid vaporizer and gas microchannel;
(4) adopt plasma gas corrosion (ICP) to etch vaporizing liquid chamber and gas microchannel;
(5) remove photoresist layer.
2) the upward processing of silicon chip structure
(1) sputter Al film barrier layer;
(2) spin coating photoresist layer on the barrier layer makes the pattern of cooling liquid load ports by lithography;
(3) corrosion Al film barrier layer;
(4) adopt plasma gas corrosion (ICP) to etch the cooling liquid load ports;
(5) the Al film barrier layer of silicon chip surface on the erosion removal;
(6) in the positive sputter heat conduction of last silicon chip hydrophobic membrane.
3) processing of lower silicon slice
(1) lower silicon slice is cleaned the back oven dry;
(2) at lower silicon slice sputter Au film;
(3) spin coating photoresist layer on the Au film;
(4) utilize the pattern of mask exposure and develop cooling liquid storage tank and fluid microchannels;
(5) corrosion Au film;
(6) adopt plasma gas corrosion (ICP) to etch cooling liquid storage tank and fluid microchannels;
(7) sputter hydrophily Heat Conduction Material film;
(8) remove photoresist layer.
4) chip bonding
Last silicon chip after the above-mentioned processing and lower silicon slice are aimed at bonding, accomplish the preparation of silicon-based vapor-liquid phase separating heat radiation chip.
The operation principle of silicon-based vapor-liquid phase separating heat radiation chip of the present invention is the liquid that the heat energy of electronic devices and components release reaches little groove; Vaporizing liquid gets into vaporizer; The liquid of reservoir replenishes back little groove voluntarily under surface tension effects simultaneously; Condensation falls after rise the gas of vaporization at the vaporizer top then, is discharged into external environment condition to heat energy through top layer simultaneously.Moreover; Another special character of the present invention also is to have set up the gas microchannel and links to each other with reservoir; The pressure of vaporization back generation can reach reservoir through the gas microchannel like this, thereby between reservoir and the little groove of liquid, forms pressure reduction enhance liquid circulating reflux.So silicon-based vapor-liquid phase separating heat radiation chip of the present invention is when work, cooling liquid is that the process that renews through overflash-condensation-vaporization-condensation isoperimetric realizes that circulation is more than.Silicon-based vapor-liquid phase separating heat radiation chip of the present invention is because temperature-resistant principle when having utilized liquid phase-change, so the phase transition temperature that electronic devices and components can be protected in cooling liquid is with interior steady operation.
Because silicon-based vapor-liquid phase separating heat radiation chip according to the invention has been realized gas and liquid phase in the chip to flow channel independently, so the present invention has following outstanding advantage:
Since micro-channel inner-cooling but liquid be to be in open state in chip, can not stop up during therefore little micro channels liquid flow boiling to 1 μ m yet.
Since make micro-channel inner-cooling but liquid can circulate voluntarily, and flowing of liquid be that abutment surface tension force drives fully, do not need extraly to set up micro-structurals such as Micropump, little valve, so chip compact more, is suitable for microminiaturization.
3. owing to absorb great amount of heat but temperature-resistant heat exchange principle when utilizing liquid phase-change, therefore can protect the electronic devices and components steady operation well, heat exchange efficiency is high.
4. silicon-based vapor-liquid phase separating heat radiation chip according to the invention adopts the preparation of semiconductor microactuator method for processing fully; Help directly integrating with electronic devices and components; Not only help electronic devices and components to more high power development, and simple in structure, easy to make, with low cost.
Description of drawings
Fig. 1 is the structural representation of silicon-based vapor-liquid phase separating heat radiation chip embodiment according to the invention.
Fig. 2 is the last silicon chip structural representation of silicon-based vapor-liquid phase separating heat radiation chip embodiment according to the invention.
Fig. 3 is the lower silicon slice structural representation of silicon-based vapor-liquid phase separating heat radiation chip embodiment according to the invention.
Fig. 4 is the process chart of last silicon chip structure of the manufacturing approach of silicon-based vapor-liquid phase separating heat radiation chip according to the invention.
Fig. 5 is the process chart of lower silicon slice structure of the manufacturing approach of silicon-based vapor-liquid phase separating heat radiation chip according to the invention.
Embodiment
Referring to Fig. 1～3; Silicon-based vapor-liquid phase separating heat radiation chip according to the invention is a double-layer structure up and down; Be respectively silicon chip and lower silicon slice, on last silicon chip 1, be provided with cooling liquid load ports 11, vaporizing liquid chamber 12 and gas microchannel 13, silicon chip 1 middle part is located in vaporizing liquid chamber 12; Gas microchannel 13 is located at the outside of vaporizing liquid chamber 12 and is communicated with gas microchannel 13, and cooling liquid load ports 11 is located at 12 both sides, vaporizing liquid chamber; On lower silicon slice 2, be provided with cooling liquid storage tank 21 and fluid microchannels 22, fluid microchannels 22 is located in the cooling liquid storage tank 21; Last silicon chip is aimed at bonding with lower silicon slice through the silicon-silicon bond technology of closing and is formed chip integral body.
Cooling liquid is through the notch of cooling liquid load ports 11 introducing cooling liquid storage tanks 21, because capillary hydrophilic interaction, cooling liquid can be packed into cooling liquid storage tank 21 and fluid microchannels 22 voluntarily; Owing to capillary hydrophobic effect terminates in vaporizing liquid chamber 12 and gas microchannel 13, seal the cooling liquid load ports at last simultaneously.
Said cooling liquid can be mixture, acetone, freon, similar freon material, the ammoniacal liquor of water, ethanol, ethanol and water or the aqueous solution that contains various metal nanoparticles etc.
Said gas microchannel 13 can be one group of parallel little raceway groove that certain distance is arranged each other, and said little raceway groove is of a size of width 1 μ m～1mm, interval 1 μ m～1mm, length 100 μ m～5cm, the degree of depth 1 μ m～1mm.
Said cooling liquid storage tank 21 is annular little raceway groove, and the little raceway groove of said annular is of a size of width 50 μ m～5cm, length 100 μ m～5cm, the degree of depth 1 μ m～1mm.
Said fluid microchannels 22 is one group of parallel little raceway groove that certain distance is arranged each other, and said little raceway groove is of a size of width 1 μ m～1mm, interval 1 μ m～1mm, length 100 μ m～5cm, the degree of depth 1 μ m～1mm.
Said vaporizing liquid chamber 12 be located at fluid microchannels 22 directly over, the area of said vaporizing liquid chamber 12 is greater than the gross area of fluid microchannels 22.
Said gas microchannel 13 intersections are located at the top of cooling liquid storage tank 21, and said gas microchannel 13 communicates with vaporizing liquid chamber 12 and cross-distribution.
Said cooling liquid storage tank 21 communicates with fluid microchannels 22 and annular spread.
The surface characteristics of the surface characteristics of said cooling liquid storage tank 21 and fluid microchannels 22 and supernatant liquid vaporizer 12 and gas microchannel 13 is opposite; Such as when cooling liquid is water; The surface characteristics of cooling liquid storage tank 21 and fluid microchannels 22 shows as hydrophilic, and the surface characteristics of supernatant liquid vaporizer 12 and gas microchannel 13 shows as hydrophobic.
The levels structure can have many group levels structures.
Following examples provide the preparation method of silicon-based vapor-liquid phase separating heat radiation chip according to the invention.
1) the upward processing of silicon chip Facad structure
(1) silicon chip A is cleaned the back oven dry;
(2) at silicon chip A surface spin coating photoresist layer 4;
(3) utilize the pattern of mask 8 exposure and develop liquid vaporizer and gas microchannel 13;
(4) adopt plasma gas corrosion (ICP) to etch vaporizing liquid chamber and gas microchannel 13;
(5) remove photoresist layer 4.
2) the upward processing of silicon chip structure
(1) sputter Al film barrier layer 5;
(2) spin coating photoresist layer 6 on barrier layer 5 makes the pattern of cooling liquid load ports 11 by lithography;
(3) corrosion Al film barrier layer 5;
(4) adopt plasma gas corrosion (ICP) to etch cooling liquid load ports 11;
(5) the Al film barrier layer 5 on erosion removal silicon chip A surface;
(6) in the positive sputter heat conduction of silicon chip A hydrophobic membrane 7.
3) processing of lower silicon slice
(1) silicon chip B is cleaned the back oven dry;
(2) at silicon chip B sputter Au film 51;
(3) spin coating photoresist layer 52 on Au film 51;
(4) utilize the pattern of mask 53 exposure and develop cooling liquid storage tank and fluid microchannels 22;
(5) corrosion Au film 51;
(6) adopt plasma gas corrosion (ICP) to etch cooling liquid storage tank and fluid microchannels 22;
(7) sputter hydrophily Heat Conduction Material film 54;
(8) remove photoresist layer 52.
4) chip bonding
Last silicon chip after the above-mentioned processing and lower silicon slice are pressed aligning bonding shown in Figure 1, accomplish the preparation of silicon-based vapor-liquid phase separating heat radiation chip.
Claims (8)
1. silicon-based vapor-liquid phase separating heat radiation chip; It is characterized in that being double-layer structure up and down; Be respectively silicon chip and lower silicon slice, on last silicon chip, be provided with cooling liquid load ports, vaporizing liquid chamber and gas microchannel, the silicon chip middle part is located in the vaporizing liquid chamber; The gas microchannel is located at the outside of vaporizing liquid chamber and is communicated with the vaporizing liquid chamber, and the cooling liquid load ports is located at both sides, vaporizing liquid chamber; On lower silicon slice, be provided with cooling liquid storage tank and fluid microchannels, fluid microchannels is located in the cooling liquid storage tank; Last silicon chip is aimed at bonding with lower silicon slice; Said vaporizing liquid chamber be located at fluid microchannels directly over; Said gas microchannel intersection is located at the top of cooling liquid storage tank, and said cooling liquid storage tank communicates with fluid microchannels and annular spread, and the gas microchannel links to each other with the cooling liquid storage tank.
2. silicon-based vapor-liquid phase separating heat radiation chip as claimed in claim 1 is characterized in that said levels structure is many group levels structures.
3. silicon-based vapor-liquid phase separating heat radiation chip as claimed in claim 1; It is characterized in that said gas microchannel is one group of parallel little raceway groove that spacing is arranged each other, said little raceway groove is of a size of width 1 μ m～1mm, at interval 1 μ m～1mm; Length 100 μ m～5cm, the degree of depth 1 μ m～1mm.
4. silicon-based vapor-liquid phase separating heat radiation chip as claimed in claim 1 is characterized in that said cooling liquid storage tank is annular little raceway groove, and the little raceway groove of said annular is of a size of width 50 μ m～5cm, length 100 μ m～5cm, the degree of depth 1 μ m～1mm.
5. silicon-based vapor-liquid phase separating heat radiation chip as claimed in claim 1; It is characterized in that said fluid microchannels is one group of parallel little raceway groove that spacing is arranged each other, said little raceway groove is of a size of width 1 μ m～1mm, at interval 1 μ m～1mm; Length 100 μ m～5cm, the degree of depth 1 μ m～1mm.
6. silicon-based vapor-liquid phase separating heat radiation chip as claimed in claim 1 is characterized in that the gross area of the area of said vaporizing liquid chamber greater than fluid microchannels.
7. silicon-based vapor-liquid phase separating heat radiation chip as claimed in claim 1 is characterized in that said gas microchannel communicates with the vaporizing liquid chamber and cross-distribution.
8. the preparation method of silicon-based vapor-liquid phase separating heat radiation chip as claimed in claim 1 is characterized in that may further comprise the steps:
1) the upward processing of silicon chip Facad structure
(1) will go up silicon chip and clean the back oven dry;
(2) at last silicon chip surface spin coating photoresist layer;
(3) utilize the pattern of mask exposure and develop liquid vaporizer and gas microchannel;
(4) adopt the plasma gas corrosion to etch vaporizing liquid chamber and gas microchannel;
(5) remove photoresist layer;
2) the upward processing of silicon chip structure
(1) sputter Al film barrier layer;
(2) spin coating photoresist layer on the barrier layer makes the pattern of cooling liquid load ports by lithography;
(3) corrosion Al film barrier layer;
(4) adopt the plasma gas corrosion to etch the cooling liquid load ports;
(5) the Al film barrier layer of silicon chip surface on the erosion removal;
(6) in the positive sputter heat conduction of last silicon chip hydrophobic membrane;
3) processing of lower silicon slice
(1) lower silicon slice is cleaned the back oven dry;
(2) at lower silicon slice sputter Au film;
(3) spin coating photoresist layer on the Au film;
(4) utilize the pattern of mask exposure and develop cooling liquid storage tank and fluid microchannels;
(5) corrosion Au film;
(6) adopt the plasma gas corrosion to etch cooling liquid storage tank and fluid microchannels;
(7) sputter hydrophily Heat Conduction Material film;
(8) remove photoresist layer;
4) chip bonding
Last silicon chip after the above-mentioned processing and lower silicon slice are aimed at bonding; Said vaporizing liquid chamber be located at fluid microchannels directly over; Said gas microchannel intersection is located at the top of cooling liquid storage tank; Said cooling liquid storage tank communicates with fluid microchannels and annular spread, and the gas microchannel links to each other with the cooling liquid storage tank, accomplishes the preparation of silicon-based vapor-liquid phase separating heat radiation chip.
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| CN111343834A (en) * | 2020-01-17 | 2020-06-26 | 广东工业大学 | Electronic equipment heat dissipation micro-fluidic chip and preparation method thereof |
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| CN1671019A (en) * | 2004-05-24 | 2005-09-21 | 中国科学院长春光学精密机械与物理研究所 | Back cooling type high power semiconductor laser micro-channel heat sink structure and preparing method thereof |
| CN1794444A (en) * | 2005-11-10 | 2006-06-28 | 上海交通大学 | Micropassage type radiator based on diamond film |
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| CN101667561A (en) | 2010-03-10 |
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