CN103839905A - Silicon substrate micro-channel heat exchanger with electric fluid power micro-pump and manufacturing method thereof - Google Patents
Silicon substrate micro-channel heat exchanger with electric fluid power micro-pump and manufacturing method thereof Download PDFInfo
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- CN103839905A CN103839905A CN201410021178.4A CN201410021178A CN103839905A CN 103839905 A CN103839905 A CN 103839905A CN 201410021178 A CN201410021178 A CN 201410021178A CN 103839905 A CN103839905 A CN 103839905A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 title claims abstract description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000012530 fluid Substances 0.000 title abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 43
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010931 gold Substances 0.000 claims abstract description 11
- 229910052737 gold Inorganic materials 0.000 claims abstract description 11
- 230000008569 process Effects 0.000 claims abstract description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000010147 laser engraving Methods 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- 229910017083 AlN Inorganic materials 0.000 claims description 15
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 15
- 238000001020 plasma etching Methods 0.000 claims description 6
- 235000003392 Curcuma domestica Nutrition 0.000 claims description 5
- 244000008991 Curcuma longa Species 0.000 claims description 5
- 235000003373 curcuma longa Nutrition 0.000 claims description 5
- 235000013976 turmeric Nutrition 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 239000012809 cooling fluid Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 238000004377 microelectronic Methods 0.000 abstract description 12
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 2
- 239000000110 cooling liquid Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention discloses a silicon substrate micro-channel heat exchanger with an electric fluid power micro-pump and a manufacturing method thereof. The silicon substrate micro-channel heat exchanger is formed by sealing a silicon substrate and a top aluminum nitride plate with the electric fluid power micro-pump in a bonding mode. A micro-channel is etched in the surface of the silicon substrate according to the reaction ion etching method so that a flow channel for cooling liquid acetone and a place for heat exchanging can be formed. The electric fluid power micro-pump of the top aluminum nitride plate is manufactured through the laser engraving and gold immersing process or the ion sputtering and evaporating process. The electric fluid power micro-pump has the advantages of being stable in flowing, reliable in operation, accurate in flow control, low in energy consumption and the like, and can be effectively integrated with the silicon substrate micro-channel, and therefore the limited space in a micro-electronics element can be effectively saved, and the silicon substrate micro-channel heat exchanger has the wide application prospect in the micro-electronics heat dissipation field.
Description
Technical field
The present invention relates to a kind of silicon substrate microchannel heat exchanger and manufacture method thereof that is applied to heat dissipation from microelectronic devices, particularly a kind of silicon substrate microchannel heat exchanger and manufacture method thereof with electrohydrodynamic Micropump.
Background technology
At present, along with the rapid progress of microelectronics science and technology, the characteristic size of electronic devices and components is the smaller the better on the one hand, develop to sub-micrometer scale from micron dimension, on the other hand, the integrated level of device has increased progressively at a high speed with 40% ~ 50% every year since nineteen fifty-nine, and this has directly caused the continuous increase of electronic devices and components power consumptions, and the remarkable of unit are density of heat flow rate rises.The heat radiation power of current high hot-fluid device reaches
the magnitude of W/m2, and the heat radiation of electronic devices and components of future generation will exceed
w/m2.The reliability of microelectronic component is very responsive to temperature, device temperature 1 ℃ of every increase in 70 ℃ ~ 80 ℃ levels, its reliability will decline 5%, therefore these caloric requirements are discharged in time in temperature the to guarantee chip scope in being allowed, and existing electronics cooling technology cannot meet the required heat radiation power of present electronic device.The heat dissipation problem of great-power electronic chip has become a bottleneck of microelectronic industry development, is also the key problem that current electron device package and application must solve.
Tuhcemrna in 1981 and Paees, for the cooling problem of high heat flux microelectronics, take the lead in having proposed micro-channel heat exchanger (Miocrhcnnaelheatsikns or Mierohcnnaelheatexehnagers).General silicon substrate microchannel heat exchanger structure is: on the substrate of semiconductor silicon, etch micro-groove, form the microchannel of coolant flow with cover plate coupling, microchannel is connected with extraneous pump by tube connector, forms forced circulation loop.Flow through microchannel take away the heat that microelectronic component is produced in the mode of heat convection of microfluid.Because micro-channel heat exchanger has efficient, good heat exchange property, so since it is suggested three more than ten years so far, obtained domestic and international researcher's extensive concern always.
And that the conventional pump being connected with micro-channel heat exchanger has volume is large, the shortcoming such as power consumption is high, and noise is large, and flow control accuracy is poor, has shown serious inadaptability at microelectronics field of radiating.
Electrohydrodynamic Micropump is a kind ofly under highfield effect, to be subject to Coulomb force by the ion in liquid working substance and to move, thereby indirectly drive the motion of fluid molecule around, and then the mobile power set of driving liquid working substance, there is volume little, movement-less part, reliable, low consumption, without separate space, adopt DC driven (but not all), do not produce complementary field, can not disturb the advantages such as electronic component work, show good adaptability, being recognized is a breakthrough that solves the cooling problem of high hot-fluid device in microelectronic industry, have broad application prospects in the cooling field of microfluid.
Design a kind of silicon substrate microchannel heat exchanger with electrohydrodynamic Micropump based on being necessary above, both there is stable, reliable, the accurate active power of the flow source of flowing and driven the mobile of liquid, can effectively save again system space and energy consumption.
Summary of the invention
The object of the invention is to overcome the shortcoming of prior art, provide a kind of silicon substrate microchannel heat exchanger with electrohydrodynamic Micropump on the one hand, a kind of silicon substrate microchannel heat exchanger method with electrohydrodynamic Micropump is provided on the other hand.
The silicon substrate microchannel heat exchanger with electrohydrodynamic Micropump provided by the invention adopts following technical scheme:
There is the silicon substrate microchannel heat exchanger of electrohydrodynamic Micropump, comprise the top board and the silicon substrate that fit tightly up and down;
Described silicon substrate upper surface is etched with the micro-groove running through along its length by reactive ion etching method, the hydraulic diameter of described micro-groove is 10um ~ 3mm;
Described top board is processed with electrohydrodynamic Micropump towards the one side of silicon substrate, described electrohydrodynamic Micropump comprises the emitter trench and the collector trench that are processed with comb teeth-shaped structure, the degree of depth of described emitter trench and collector trench is 20-40 μ m, described emitter trench is parallel with collector trench to be interspersed, in groove, all fill out and be coated with gold, adjacent emitter trench and collector trench form an electrode pair, distance between collector trench and the emitter trench of same electrode pair is 0.1mm ~ 0.3mm, distance between two electrode pairs is in electrode pair between two electrodes 2 ~ 3 of distance times, all emitter trench ends are connected with DC power anode, all collector trench ends are connected with DC power cathode.
Further, it is 0.5um ~ 2um aluminium nitride film that the upper surface of described gold is also coated with a layer thickness, so neither affect the electric field strength of emitter and inter-collector, can effectively play again the effect of insulation, prevent the direct conduction that causes described silicon substrate that contacts of electrode and silicon substrate.
Further, described heat exchanger employing acetone is cooling fluid.
Further, described top board material is aluminium nitride.
Further, described top board bottom shape size and silicon substrate is consistent.
Use the present invention to have in the micro-channel heat exchanger process of electrohydrodynamic Micropump, should first the micro-channel heat exchanger with electrohydrodynamic Micropump be connected with the external fluid circulatory system, allow fluid be full of whole micro pump chamber, then connect DC power supply, utilize electrohydraulic dynamic effect, order about fluid by the drag interaction of electrode surface ion and flow, reach the effect of heat exchange.
The manufacture method the invention provides adopts following technical scheme:
A manufacture method with the silicon substrate microchannel heat exchanger of electrohydrodynamic Micropump, comprises step:
(1) on top board, process respectively emitter trench and collector trench, on silicon substrate by reactive ion etching method micro-groove that etching runs through along its length, described top board adopts laser-engraving technique, emitter trench and collector trench described in carve comb teeth-shaped on the top board of described aluminium nitride, and remove burr and the corner angle of slot wedge;
(2) adopt turmeric to process or ion sputtering technique, by the full gold of groove plating of emitter trench in step (1) and collector electrode, prepare emitter and collector electrode;
(3) adopting vapor deposition treatment technique, is 0.5um ~ 2um aluminium nitride film in step (2) top board plated surface after treatment a layer thickness;
(4) by top board after treatment) adopt bonding techniques hermetically sealed with silicon substrate.
The present invention compared to existing technology, its beneficial effect is: adopt thin board type raw material, because electrohydrodynamic Micropump has stable, reliable, the feature such as flow control is accurate, energy consumption is low that flows, and can effectively be integrated into one with silicon substrate microchannel, effectively save limited space in microelectronic component, have broad application prospects at microelectronics field of radiating, manufacturing process is simply ripe simultaneously, cost is low, be applicable to processing and the production of different scales situation, there is higher economic benefit.
Accompanying drawing explanation
Fig. 1 is a kind of silicon substrate microchannel heat exchanger exploded perspective view with electrohydrodynamic Micropump.
Fig. 2 is the structural representation with the silicon substrate microchannel heat exchanger silicon substrate of electrohydrodynamic Micropump.
Fig. 3 is the top board structure schematic diagram with the silicon substrate microchannel heat exchanger of electrohydrodynamic Micropump.
Fig. 4 is top board fabrication processing figure.
Fig. 4 (a) is initial aluminium nitride top board schematic diagram.
Fig. 4 (b), for adopting after laser-engraving technique, etches electrode structure groove schematic diagram.
Fig. 4 (c) is for adopting turmeric technique rear electrode structural representation.
Fig. 4 (d) adopts after evaporation process, electrode structure schematic diagram.
Shown in figure, be: 1-silicon substrate; 2-top board; The micro-groove of 3-; 4-emitter; 5-collector electrode.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
As Figure 1-3, there is the silicon substrate microchannel heat exchanger of electrohydrodynamic Micropump, comprise the top board 2 and the silicon substrate 1 that fit tightly up and down, described top board 2 bottom shape sizes are consistent with silicon substrate 1, described silicon substrate 1 upper surface is etched with the micro-groove 3 running through along its length by reactive ion etching method, the hydraulic diameter of described micro-groove 3 is 10um ~ 3mm;
Described top board 2 materials are aluminium nitride, top board 2 is processed with electrohydrodynamic Micropump towards the one side of silicon substrate 1, described electrohydrodynamic Micropump comprises the emitter trench 4 and the collector trench 5 that are processed with comb teeth-shaped structure, the degree of depth of described emitter trench 4 and collector trench 5 is 20-40 μ m, described emitter trench 4 is parallel with collector trench 5 to be interspersed, in groove, all fill out and be coated with gold, adjacent emitter trench 4 and collector trench 5 form an electrode pair, distance between collector trench 5 and the emitter trench 4 of same electrode pair is 0.1mm ~ 0.3mm, distance between two electrode pairs is in electrode pair between two electrodes 2 ~ 3 of distance times, all emitter trench 4 ends are connected with DC power anode, all collector trench 5 ends are connected with DC power cathode.
It is 0.5um ~ 2um aluminium nitride film that the upper surface of described gold is also coated with a layer thickness.
It is cooling fluid that described heat exchanger adopts acetone.
The manufacture method with the silicon substrate microchannel heat exchanger of electrohydrodynamic Micropump, comprises step:
(1) on top board 2, process respectively emitter trench 4 and collector trench 5, on silicon substrate 1 by reactive ion etching method micro-groove 3 that etching runs through along its length, described top board 2 adopts laser-engraving technique, emitter trench 4 and collector trench 5 described in carve comb teeth-shaped on the top board 2 of described aluminium nitride, and remove burr and the corner angle of slot wedge;
(2) adopt turmeric to process or ion sputtering technique, emitter trench in step 14 and the groove 5 of collector electrode are plated to full gold, prepare emitter and collector electrode;
(3) adopting vapor deposition treatment technique, is 0.5um ~ 2um aluminium nitride film in step (2) top board plated surface after treatment a layer thickness;
(4) adopt bonding techniques hermetically sealed with silicon substrate 1 on top board 2 after treatment.
The above-mentioned course of processing for top board 2 is referring to accompanying drawing 4:
(1) as shown in Figure 4 (b), adopt laser-engraving technique, by 4(a) in aluminium nitride top board 2 carve comb teeth-shaped emitter trench 4 and collector trench 5, and remove burr and the corner angle of slot wedge; Described emitter trench 4 is parallel with collector trench 5 to be interspersed, adjacent emitter trench 4 and collector trench 5 form an electrode pair groove, distance between collector trench 4 and the emitter trench 5 of same electrode pair groove is 0.1mm ~ 0.3mm, and the distance between two electrode pair grooves is in electrode pair groove between two electrode trenches 2 ~ 3 of distance times; The degree of depth of described emitter trench 4 and collector trench 5 is 20-40 μ m, and width is 0.1mm ~ 0.3mm;
(2) as shown in Figure 4 (c), adopt turmeric to process or ion sputtering technique, emitter trench 4 and collector trench 5 are plated to full gold layer, prepare emitter and collector electrode; Described emitter end is connected with DC power anode, and all collector electrode ends are connected with DC power cathode;
(3) as shown in Fig. 4 (d), adopt vapor deposition treatment technique, at step (2) top board 2 plated surface one deck aluminium nitride films after treatment, thickness is advisable to exceed electrode 0.5um ~ 2um, neither affect the electric field strength of emitter and inter-collector, can effectively play again the effect of insulation, prevent the direct conduction that causes silicon substrate that contacts of electrode and silicon substrate 1.
Use the present invention to have in micro-channel heat exchanger 1 process of electrohydrodynamic Micropump, should first the micro-channel heat exchanger 1 with electrohydrodynamic Micropump be connected with the external fluid circulatory system, allow fluid be full of whole micro pump chamber, then connect DC power supply, utilize electrohydraulic dynamic effect, order about fluid by the drag interaction of electrode surface ion and flow, reach the effect of heat exchange.
Above-described embodiment is preferably execution mode of the present invention; but embodiments of the present invention are not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present invention and principle, substitutes, combination, simplify; all should be equivalent substitute mode, within being included in protection scope of the present invention.
Claims (6)
1. the silicon substrate microchannel heat exchanger with electrohydrodynamic Micropump, is characterized in that, comprises the top board (2) and the silicon substrate (1) that fit tightly up and down;
Described silicon substrate (1) upper surface is etched with the micro-groove (3) running through along its length by reactive ion etching method, the hydraulic diameter of described micro-groove (3) is 10um ~ 3mm;
Described top board (2) is processed with electrohydrodynamic Micropump towards the one side of silicon substrate (1), described electrohydrodynamic Micropump comprises the emitter trench (4) and the collector trench (5) that are processed with comb teeth-shaped structure, the degree of depth of described emitter trench (4) and collector trench (5) is 20-40 μ m, described emitter trench (4) and parallel being interspersed of collector trench (5), in groove, all fill out and be coated with gold, adjacent emitter trench (4) and collector trench (5) form an electrode pair, distance between collector trench (5) and the emitter trench (4) of same electrode pair is 0.1mm ~ 0.3mm, distance between two electrode pairs is in electrode pair between two electrodes 2 ~ 3 of distance times, all emitter trench (4) end is connected with DC power anode, all collector trench (5) end is connected with DC power cathode.
2. the silicon substrate microchannel heat exchanger with electrohydrodynamic Micropump according to claim 1, is characterized in that, it is 0.5um ~ 2um aluminium nitride film that the upper surface of described gold is also coated with a layer thickness.
3. the silicon substrate microchannel heat exchanger with electrohydrodynamic Micropump according to claim 1, is characterized in that, it is cooling fluid that described heat exchanger adopts acetone.
4. the silicon substrate microchannel heat exchanger with electrohydrodynamic Micropump according to claim 1, is characterized in that, described top board (2) material is aluminium nitride.
5. the silicon substrate microchannel heat exchanger with electrohydrodynamic Micropump according to claim 1, is characterized in that, described top board (2) bottom shape size is consistent with silicon substrate (1).
6. a manufacture method for the silicon substrate microchannel heat exchanger with electrohydrodynamic Micropump as described in claim 1 to 5 any one, is characterized in that, comprises step:
(1) respectively in the upper processing of top board (2) emitter trench (4) and collector trench (5), upper by reactive ion etching method micro-groove (3) that etching runs through along its length at silicon substrate (1), described top board (2) adopts laser-engraving technique, in emitter trench (4) and collector trench (5) described in the upper carve comb teeth-shaped of the top board (2) of described aluminium nitride, and remove burr and the corner angle of slot wedge;
(2) adopt turmeric to process or ion sputtering technique, the full gold of groove (5) plating by emitter trench (4) in step (1) with collector electrode, prepares emitter and collector electrode;
(3) adopting vapor deposition treatment technique, is 0.5um ~ 2um aluminium nitride film in step (2) top board after treatment (2) plated surface a layer thickness;
(4) adopt bonding techniques hermetically sealed top board after treatment (2) and silicon substrate (1).
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104154777A (en) * | 2014-08-01 | 2014-11-19 | 厦门大学 | Micro-channel heat exchanger with staggered inner groove structure and manufacturing method of micro-channel heat exchanger |
CN104201158A (en) * | 2014-08-28 | 2014-12-10 | 中国电子科技集团公司第二十九研究所 | Integrated cooling device of silicon-based micro-channel radiator |
WO2016195570A1 (en) * | 2015-06-03 | 2016-12-08 | Apr Technologies Ab | Microfluidic array |
CN107717355A (en) * | 2017-11-10 | 2018-02-23 | 厦门大学 | A kind of reactor microchannel manufacture method based on laser secondary operation |
CN108803837A (en) * | 2017-04-26 | 2018-11-13 | 联想(新加坡)私人有限公司 | The manufacturing method of template heat transfer apparatus, electronic equipment and template heat transfer apparatus |
CN111346578A (en) * | 2020-03-30 | 2020-06-30 | 青岛科技大学 | Micro-channel reactor with energy storage structure |
CN111954370A (en) * | 2020-08-24 | 2020-11-17 | 浙江集迈科微电子有限公司 | PCB board miniflow channel heat dissipation embedding structure |
CN115297695A (en) * | 2022-08-31 | 2022-11-04 | 西安电子科技大学 | Pump and radiator integrated micro-channel radiator |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040013536A1 (en) * | 2001-08-31 | 2004-01-22 | Hower Robert W | Micro-fluidic pump |
CN1558448A (en) * | 2004-02-06 | 2004-12-29 | 中国科学院广州能源研究所 | Silicon based micro passage heat exchanger |
US20050139996A1 (en) * | 2003-12-31 | 2005-06-30 | Myers Alan M. | Apparatus and method integrating an electro-osmotic pump and microchannel assembly into a die package |
CN102832779A (en) * | 2012-08-24 | 2012-12-19 | 华南理工大学 | Microminiature electro-hydraulic power pump |
CN203242614U (en) * | 2013-05-15 | 2013-10-16 | 中国电子科技集团公司第三十八研究所 | Microfluidic-channel heat dissipation device used for an electronic component and electronic device |
CN103442541A (en) * | 2013-07-29 | 2013-12-11 | 江苏大学 | Micro cooling device of silicon-substrate capillary pump loop |
CN203690286U (en) * | 2014-01-17 | 2014-07-02 | 华南理工大学 | Silicon-based micro-channel heat exchanger with electrohydrodynamic micropump |
-
2014
- 2014-01-17 CN CN201410021178.4A patent/CN103839905B/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040013536A1 (en) * | 2001-08-31 | 2004-01-22 | Hower Robert W | Micro-fluidic pump |
US20050139996A1 (en) * | 2003-12-31 | 2005-06-30 | Myers Alan M. | Apparatus and method integrating an electro-osmotic pump and microchannel assembly into a die package |
CN1558448A (en) * | 2004-02-06 | 2004-12-29 | 中国科学院广州能源研究所 | Silicon based micro passage heat exchanger |
CN102832779A (en) * | 2012-08-24 | 2012-12-19 | 华南理工大学 | Microminiature electro-hydraulic power pump |
CN203242614U (en) * | 2013-05-15 | 2013-10-16 | 中国电子科技集团公司第三十八研究所 | Microfluidic-channel heat dissipation device used for an electronic component and electronic device |
CN103442541A (en) * | 2013-07-29 | 2013-12-11 | 江苏大学 | Micro cooling device of silicon-substrate capillary pump loop |
CN203690286U (en) * | 2014-01-17 | 2014-07-02 | 华南理工大学 | Silicon-based micro-channel heat exchanger with electrohydrodynamic micropump |
Non-Patent Citations (2)
Title |
---|
于翮等: "电液动力微泵的实验分析", 《工程热物理学报》 * |
温殿忠: "微泵硅膜振动拾振传感器的设计", 《传感技术学报》 * |
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CN104154777A (en) * | 2014-08-01 | 2014-11-19 | 厦门大学 | Micro-channel heat exchanger with staggered inner groove structure and manufacturing method of micro-channel heat exchanger |
CN104201158A (en) * | 2014-08-28 | 2014-12-10 | 中国电子科技集团公司第二十九研究所 | Integrated cooling device of silicon-based micro-channel radiator |
US10943849B2 (en) | 2015-06-03 | 2021-03-09 | Apr Technologies Ab | Microfluidic array |
WO2016195570A1 (en) * | 2015-06-03 | 2016-12-08 | Apr Technologies Ab | Microfluidic array |
CN108803837A (en) * | 2017-04-26 | 2018-11-13 | 联想(新加坡)私人有限公司 | The manufacturing method of template heat transfer apparatus, electronic equipment and template heat transfer apparatus |
CN108803837B (en) * | 2017-04-26 | 2021-11-19 | 联想(新加坡)私人有限公司 | Plate-type heat transport device, electronic apparatus, and method for manufacturing plate-type heat transport device |
CN107717355A (en) * | 2017-11-10 | 2018-02-23 | 厦门大学 | A kind of reactor microchannel manufacture method based on laser secondary operation |
CN107717355B (en) * | 2017-11-10 | 2020-02-14 | 厦门大学 | Reactor microchannel manufacturing method based on laser secondary machining |
CN111346578A (en) * | 2020-03-30 | 2020-06-30 | 青岛科技大学 | Micro-channel reactor with energy storage structure |
CN111346578B (en) * | 2020-03-30 | 2021-04-13 | 青岛科技大学 | Micro-channel reactor with energy storage structure |
CN111954370A (en) * | 2020-08-24 | 2020-11-17 | 浙江集迈科微电子有限公司 | PCB board miniflow channel heat dissipation embedding structure |
CN115297695A (en) * | 2022-08-31 | 2022-11-04 | 西安电子科技大学 | Pump and radiator integrated micro-channel radiator |
CN115297695B (en) * | 2022-08-31 | 2024-05-17 | 西安电子科技大学 | Pump and radiator integrated micro-channel radiator |
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