CN108682660B - Miniature cooling unit and integration method and device thereof - Google Patents
Miniature cooling unit and integration method and device thereof Download PDFInfo
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- CN108682660B CN108682660B CN201810477952.0A CN201810477952A CN108682660B CN 108682660 B CN108682660 B CN 108682660B CN 201810477952 A CN201810477952 A CN 201810477952A CN 108682660 B CN108682660 B CN 108682660B
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- 238000001816 cooling Methods 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000010354 integration Effects 0.000 title abstract description 18
- 239000000110 cooling liquid Substances 0.000 claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000011521 glass Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000001312 dry etching Methods 0.000 claims abstract description 7
- 239000002826 coolant Substances 0.000 claims description 20
- 238000009826 distribution Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 230000000737 periodic effect Effects 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000005553 drilling Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 230000000007 visual effect Effects 0.000 claims description 2
- 239000011800 void material Substances 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 18
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- Microelectronics & Electronic Packaging (AREA)
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- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a miniature cooling unit and an integration method and a device thereof, wherein the miniature cooling unit comprises a silicon substrate and a glass cover plate, wherein the silicon substrate and the glass cover plate form an internal flow channel through anodic bonding; the middle area of the silicon substrate is a cooling liquid flowing heat exchange area, a micro-channel array consisting of a plurality of radiating fins is arranged, two ends of the cooling liquid flowing heat exchange area are respectively provided with a rectifying area and guide fins, and the radiating fins and the guide fins are both realized by adopting a dry etching process; the left end and the right end of the glass cover plate are provided with holes corresponding to the middle position of a rectifying area in the silicon substrate and used for the inlet and outlet of cooling liquid; the upper surface and the lower surface of the micro cooling unit are both metalized surfaces. The integration method comprises the steps of low thermal resistance bonding of the semiconductor power chip, grounding of the semiconductor power chip and water-tight packaging of the micro cooling unit to the box body. The miniature cooling unit provided by the invention has a flow channel with a high depth-to-width ratio, and has remarkable advantages in the aspects of improving the heat dissipation efficiency and reducing the flow resistance.
Description
Technical Field
The invention relates to the technical field of heat dissipation of electronic equipment, in particular to a miniature cooling unit and an integration method and device thereof.
Background
Aiming at a high-power and airtight functional unit, a new packaging form appearing in recent years, such as a System In Package (SiP) and a system on package (SoP) integration mode and the like, is not suitable for a traditional cooling technology and a heat dissipation integration device due to small size, high density and complex function, in addition, the problem caused by mismatching of thermal expansion coefficients must be emphasized on a material system in the whole functional unit and system packaging form, so that the problem of the traditional large-size metal-based micro-channel is more prominent, the volume of the material system and the system determines that the traditional heat dissipation/cooling technology is obviously limited, a proper heat dissipation mode must be adopted, and the temperature of a temperature sensitive electronic component in the equipment is ensured to be lower than the limit temperature of normal operation.
The existing silicon-based micro-channel processing technology and heat dissipation technology have the following patents: silicon-based microchannel heat exchangers, patent No.: CN 1558448A; a silicon-based micro-channel heat exchanger with an electrohydrodynamic micropump and a manufacturing method thereof are disclosed in the patent numbers: CN103839905A, focusing on microchannel cooling unit fabrication itself, aims to open up the process realization path at the unit level. Typical patents for solving the problem of heat dissipation integration of micro-channels include: a silicon-based microchannel radiator integrated cooling device, patent number: CN104201158A, which proposes to integrate a silicon-based microchannel heat sink into a box, but the application range is very limited, and the problems of chip grounding and water tightness of mounting are not solved, these typical technologies do not propose a complete set of integrated cooling system solutions with high reliability, strong heat dissipation capability, and good flow resistance.
From the foregoing description, in the existing cooling unit manufacturing and integration solution, the application range of the chip is limited, the performance of the heat dissipation system is not good enough, and the following problems exist in the practical engineering:
1) the grounding problem of the power chip in integrated cooling is not considered;
2) thermal interface issues with power chips in use;
3) the water tightness of the cooling liquid at the inlet and the outlet and the erosion and corrosion resistance of the welding interface in long-term use.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the problems in the prior art, a miniature cooling unit and an integration method and device thereof are provided, which can solve the problem of heat dissipation of the conventional high-power and high-heat-flow-density semiconductor chip. The invention realizes the silicon-glass-based micro cooling unit with a high aspect ratio runner structure by silicon micromachining and anodic bonding methods, and effectively ensures the normal work of the semiconductor power chip and devices by optimizing the interface thermal resistance of the semiconductor power chip integration, the semiconductor power chip grounding realization mode and the water-tight packaging from the micro cooling unit to the box body.
The invention provides a miniature cooling unit which is characterized by comprising a silicon substrate and a glass cover plate, wherein the silicon substrate and the glass cover plate are integrated together through anodic bonding; the middle area of the silicon substrate is a cooling liquid flowing heat exchange area, a micro-channel array consisting of a plurality of radiating fins is arranged, two ends of the cooling liquid flowing heat exchange area are respectively provided with a rectifying area and guide fins, and the radiating fins and the guide fins are both realized by adopting a dry etching process; the left end and the right end of the glass cover plate are provided with holes corresponding to the middle position of a rectifying area in the silicon substrate and used for the inlet and outlet of cooling liquid; the upper surface and the lower surface of the micro cooling unit are both metalized surfaces.
Further, the width of the micro-channel between the adjacent radiating fins is 20um-100 um.
Further, the shape of the microchannel is a straight channel, a periodic discontinuous straight channel, a serpentine channel or a periodic cylindrical channel.
Another aspect of the present invention provides a method for integrating a micro cooling unit as described above, comprising: integrating a semiconductor power chip on the metallized surface of the micro cooling unit in a low-thermal resistance bonding mode; grounding the semiconductor power chip; the miniature cooling unit is packaged to the box body in a water-tight mode, a cooling liquid distribution pipeline is arranged in the bottom plate of the box body, a cooling liquid inlet and a cooling liquid outlet are formed in the outer side face of the box body, a single or arrayed small square groove is formed in the bottom plate of the box body, the miniature cooling unit is installed in the small square groove, two openings are formed in the bottom of the small square groove and used for communicating the cooling liquid inlet and the cooling liquid outlet of the miniature cooling unit with the cooling liquid distribution pipeline in the bottom plate of the box body, and the cooling liquid is distributed to channels of all the miniature cooling units through the cooling liquid distribution pipeline in the bottom plate of the.
Further, the specific method of low thermal resistance bonding is as follows: the interface material is realized through a nano silver paste sintering process, and the material comprises nano silver and a binder.
Further, the specific method for grounding the semiconductor power chip comprises the following steps: connecting a source electrode, a drain electrode and a grid electrode bonding point on the semiconductor power chip with a metalized surface on the miniature cooling unit in a lead bonding mode; and four corners of the micro cooling unit are wrapped with gold bands, so that the connection between the upper metalized surface of the micro cooling unit and the lower metalized surface of the micro cooling unit is realized.
Furthermore, the gold belt is pressed in a parallel micro-gap welding mode.
Furthermore, a step limiting structure is processed at the hole part of the glass cover plate of the miniature cooling unit, a groove limiting structure is processed at the opening part of the small square groove of the box body, and the step limiting structure is completely matched with the groove limiting structure.
Another aspect of the present invention provides an integrated device of a micro cooling unit, including the micro cooling unit, a semiconductor power chip and a box body as described above, wherein the semiconductor power chip is integrated on a metalized surface of the micro cooling unit by a low thermal resistance bonding manner, and the semiconductor power chip is grounded; miniature cooling unit water proofness encapsulation is to the box body, be provided with coolant liquid distribution pipeline in the box body bottom plate, the box body lateral surface is provided with coolant liquid entry and coolant liquid export, be provided with single or little square groove of arraying on the box body bottom plate, miniature cooling unit installs in little square groove, little square groove bottom is provided with two openings, a coolant liquid entry and the coolant liquid export for realizing miniature cooling unit and the coolant liquid distribution pipeline intercommunication in the box body bottom plate, coolant liquid distribution pipeline in the box body bottom plate distributes the coolant liquid to every miniature cooling unit's runner in.
Further, the interface material of the low-thermal resistance bonding mode is realized by a nano silver paste sintering process, and the material per se comprises nano silver and a binder.
Furthermore, the mode of grounding the semiconductor power chip is as follows: the source electrode, the drain electrode and the grid electrode bonding point on the semiconductor power chip are connected with the metallized surface on the miniature cooling unit in a lead bonding mode; the upper metalized surface of the micro cooling unit is connected with the lower metalized surface of the micro cooling unit through gold bands at four corners of the micro cooling unit.
Furthermore, the gold belt is pressed in a parallel micro-gap welding mode.
Furthermore, a step limiting structure is processed at the hole part of the miniature cooling unit glass cover plate, a groove limiting structure is processed at the opening part of the small square groove of the box body, and the step limiting structure is completely matched with the groove limiting structure.
Compared with the prior art, the invention realizes a complete and reliable heat dissipation solution, has low integrated interface thermal resistance, can ensure intact chip grounding, overcomes the constraint that the interconnection grounding depth of the metalized through holes of the silicon substrate and the glass substrate is limited, has good water tightness of the adopted limiting structure, can realize accurate alignment, prevent the solder from blocking the inlet and outlet holes, avoid the solder corrosion of the cooling liquid and the like, and has strong engineering practicability.
Drawings
The invention will now be described by way of example and with reference to the accompanying drawings in which:
FIG. 1 is a schematic structural view of a micro cooling unit;
FIGS. 2(1) -2(4) are schematic views of a through-micro-channel structure, a periodic discontinuous through-micro-channel structure, a serpentine-micro-channel structure and a periodic cylindrical-micro-channel structure, respectively;
FIG. 3 is a schematic front view of the overall structure of the semiconductor power chip integrated into the micro cooling unit and the semiconductor power chip ground;
FIG. 4 is a schematic backside view of the overall structure of a semiconductor power chip integrated into a micro cooling unit and implementing grounding of the semiconductor power chip;
FIG. 5 is a schematic diagram of the case and the micro cooling unit integrated on the case;
fig. 6 is an overall schematic view of the integration of the micro cooling unit into the cartridge.
The labels in the figure are: 3-a micro cooling unit; 31-a silicon substrate; 311-micro channel array; 312-a rectifying section; 313-guide fin; 32-a glass cover plate; 321-inlet of cooling liquid of micro cooling unit; 322-outlet of cooling liquid of micro cooling unit; 314-metallized surface on micro cooling unit; 33-a semiconductor power chip; 34-gold wire; 35-low thermal resistance bonding interface material; 323-step limit structure; 324-micro cooling unit lower metallized surface; 36-a grounding gold band; 1, a box body; 11-box coolant inlet; 12-box coolant outlet; 13-small square groove cooling liquid inlet on the box body; 14-a small square groove cooling liquid outlet on the box body; 15-small square groove; 16-a groove limit structure; 17-box body bottom plate; 18-coolant distribution lines; 2, sealing the cover plate.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
The invention aims to solve the problem of heat dissipation of the prior high-power and high-heat-flux semiconductor power chip, realizes a silicon-glass-based micro cooling unit with a high aspect ratio channel structure by a silicon micromachining and anodic bonding method, and provides a whole set of micro cooling unit integration method and device for engineering application, wherein the method comprises the following steps: the low thermal resistance bonding of the semiconductor power chip, the grounding of the semiconductor power chip and the water-tight packaging of the micro cooling unit to the box body.
One, micro cooling unit
As shown in fig. 1, the micro cooling unit 3 includes a silicon substrate 31 and a glass cover plate 32, which are integrated together by an anodic bonding process, wherein the silicon substrate 31 is made of a silicon-based material, and the glass cover plate 32 is made of a high temperature resistant glass.
The middle region of the silicon substrate 31 is a coolant flow heat exchange region, and is provided with a micro-channel array 311 composed of a plurality of heat dissipation fins, the effective area of the micro-channel array 311 can be flexibly changed according to the size of the semiconductor power chip, and the effective area of the micro-channel array 311 is required to be larger than the area of the semiconductor power chip. In some embodiments, the width of the microchannel between adjacent fins is at least 20um and at most 100 um. The two ends of the cooling liquid flowing heat exchange area are respectively provided with a rectifying area 312, and guide fins 313 are arranged, so that the flow velocity in all micro-channels can be ensured to be consistent as much as possible, and the heat dissipation efficiency is improved. In some embodiments, the heat dissipation fins and the guide fins 313 are both implemented by a dry etching process, the micro-channel may be a straight channel, a periodic discontinuous straight channel, a serpentine channel, or a periodic cylindrical channel, as shown in fig. 2(1) - (2) (4), respectively, and the specific implementation method thereof is as follows:
the method is realized by adopting a silicon material through a semiconductor processing technology, and the specific technological process comprises the following steps: wafer preparation → mask preparation → back metallization → front etching barrier layer → photolithography and patterning → plasma dry etching → etching barrier layer removal, and finally the silicon substrate shown in fig. 2 is formed.
The left and right ends of the glass cover plate are provided with holes corresponding to the center of the rectifying region in the silicon substrate for the inlet and outlet of the cooling liquid, namely a micro cooling unit cooling liquid inlet 321 and a micro cooling unit cooling liquid outlet 322. In some embodiments, the micro cooling unit cooling fluid inlet 321 and the micro cooling unit cooling fluid outlet 322 are implemented by laser drilling. The upper surface and the lower surface of the micro cooling unit are both metallized.
The micro cooling unit adopts a common dry etching process in MEMS processing, realizes a micro-channel structure with a high depth-to-width ratio on a silicon substrate by optimizing parameters, and the average etching depth of the micro-channel is 2 times of the conventional etching depth under the same characteristic dimension. Research shows that the high aspect ratio can show excellent flow resistance in a heat dissipation test, and the depth-to-width ratio of the micro-channel is required to be more than 5: 1. And a cooling liquid inlet and a cooling liquid outlet on the glass cover plate adopt a laser drilling mode to realize holes with required diameters. The upper surface and the lower surface of the micro cooling unit are both metallized. Through anodic bonding, realize the sealed of silicon substrate and glass apron, because glass light transmissivity is good itself, this kind of miniature cooling unit can be visual completely when later stage test, is convenient for carry out deep analysis to the flow state of fluid in the microchannel. In addition, compared with the direct silicon-silicon bonding, the silicon-glass anodic bonding method has the advantages that the cleanliness requirement on the operating environment is much lower, and the harsh experimental environment requirement is avoided.
Second, low thermal resistance bonding and grounding of semiconductor power chip
As shown in fig. 3 and 4, the semiconductor power chip 33 is integrated on the metallized surface 314 of the micro cooling unit through the low thermal resistance bonding interface material 35, in some embodiments, the low thermal resistance bonding interface material 35 is realized through a process of nano sintering silver paste, the material itself includes nano silver and a binder, a reasonable sintering curve is set in a programmed furnace, so that a porous silver bulk or film material is formed after a solvent is removed, a very low void ratio can be realized, and a connection interface with high thermal conductivity is finally obtained. The high-conductivity integration of the semiconductor power chip and the micro cooling unit is ensured through the nano silver sintering process, and the interface thermal resistance is reduced.
The source, drain and gate bonding points on the semiconductor power chip 33 are connected with the metallized surface 314 on the micro cooling unit in a lead bonding manner; the upper metallized surface 314 of the micro cooling unit is connected with the lower metallized surface 324 of the micro cooling unit through the gold bands 36 at the four corners of the micro cooling unit 3, which plays a role of side metallization and realizes the grounding of the micro cooling unit to the box body. In some embodiments, the leads are gold wires 34, and the gold wires are bonded by ultrasonic thermocompression bonding. To ensure a reliable connection of the gold ribbon to the upper metallized surface 314 and the lower metallized surface 324 of the micro-cooling unit, in some embodiments, the stamping is performed by parallel micro-gap welding. The grounding mode of the invention avoids the limitation of the thickness of the micro cooling unit caused by the manufacturing of the metallized vertical grounding through holes on the silicon substrate and the glass cover plate, can allow the manufacturing of deeper micro channels, and greatly contributes to the reduction of the flow resistance of the system.
Three, water tight encapsulation of micro cooling unit to box
As shown in fig. 5 and 6, a cooling liquid distribution pipeline 18 is arranged in a box body bottom plate 17 of the box body 1, and a box body cooling liquid inlet 11 and a box body cooling liquid outlet 12 are arranged on the outer side surface of the box body; according to the needs, a single or arrayed small square groove 15 can be arranged on the box body bottom plate 17, the micro cooling units 3 are installed in the small square groove 15, two openings are arranged at the bottom of the small square groove 15 and used for enabling the cooling liquid inlet 321 and the cooling liquid outlet 322 of each micro cooling unit 3 to be communicated with the cooling liquid distribution pipeline 18 in the box body bottom plate, and the cooling liquid distribution pipeline 18 in the box body bottom plate distributes the cooling liquid to the flow channel of each micro cooling unit 3.
In some embodiments, the opening portion of the small square groove 15 is processed with a groove limiting structure 16, the step limiting structure 323 on the glass cover plate is completely matched with the groove limiting structure 16 on the box body, the precise alignment between the cooling liquid inlet 321 and the cooling liquid outlet 322 of the micro cooling unit 3 and the cooling liquid inlet 13 and the cooling liquid outlet 14 of the small square groove 15 on the box body can be easily realized in the integration process, the blockage of the cooling liquid inlet and the cooling liquid outlet caused by the overflow of the solder can be prevented, meanwhile, the solder close to the cooling liquid inlet and the cooling liquid outlet can be prevented from being washed by the cooling liquid for a long time, and the reliability of the whole integration process can be greatly improved.
In one embodiment, the box 1 is made of metal material and is machined to form the square grooves 15 in an array form, the cooling liquid enters from the box cooling liquid inlet 11, is distributed to the box upper square groove cooling liquid inlet 13 through the cooling liquid distribution pipeline 18 in the box bottom plate 17 of the box 1, flows through the micro cooling unit 3 and then flows out from the box upper square groove cooling liquid outlet 14, is combined and then collected through the cooling liquid distribution pipeline 18 in the box bottom plate 17, and finally flows out of the box cooling liquid outlet 12 to enter the cooling liquid circulation system.
In some embodiments, the micro cooling unit 3 integrated with the semiconductor power chip is finally integrated into the small square groove 15 on the case body in a welding manner, the groove limiting structure 16 of the small square groove on the case body is precisely aligned with the step limiting structure 323 on the glass cover plate and then nested with each other, and finally the lower metalized surface 324 of the micro cooling unit is seamlessly bonded with the bottom surface of the small square groove 15 on the case body, so that the cooling liquid can smoothly pass through the micro cooling unit 3.
As described above, in the method and apparatus for integrating a micro cooling unit according to the present invention, the micro cooling unit itself has a flow channel with a high aspect ratio, which is advantageous in increasing heat dissipation efficiency and reducing flow resistance. The semiconductor power chip and the miniature cooling unit adopt a high-thermal-conductivity integration method of nano sintered silver, so that the interface thermal resistance is greatly reduced, the heat generated by the semiconductor power chip can be quickly led into the miniature cooling unit, and the grounding method of the semiconductor power chip can conveniently and low-cost ensure the good grounding electrical performance of a power device while solving the problem of heat dissipation. In addition, the water-tight package with the limit structure adopted in the invention can show excellent performances in the aspects of accurate alignment, prevention of solder from blocking the cooling liquid inlet and the cooling liquid outlet, and prevention of corrosion of the solder by the cooling liquid. Thus, the present invention is a systematic solution and apparatus for integration of efficient micro cooling units.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification, and to any novel method or process steps or any novel combination of steps disclosed.
Claims (11)
1. The miniature cooling unit is characterized by comprising a silicon substrate and a glass cover plate, wherein the silicon substrate and the glass cover plate are integrated together through anodic bonding so as to realize the sealing of the silicon substrate and the glass cover plate; the middle area of the silicon substrate is a cooling liquid flowing heat exchange area, a micro-channel array consisting of a plurality of radiating fins is arranged, two ends of the cooling liquid flowing heat exchange area are respectively provided with a rectifying area and guide fins, and the radiating fins and the guide fins are both realized by adopting a dry etching process; the left end and the right end of the glass cover plate are provided with holes corresponding to the middle position of a rectifying area in the silicon substrate and used for the inlet and outlet of cooling liquid; the upper surface and the lower surface of the micro cooling unit are both metalized surfaces; a dry etching process is adopted to realize a micro-channel structure with a high depth-to-width ratio on a silicon substrate, and the etching average depth of the micro-channel is 2 times of the conventional etching depth; the micro-channel aspect ratio is greater than 5: 1; a cooling liquid inlet and a cooling liquid outlet on the glass cover plate adopt a laser drilling mode to realize holes with required diameters; when the micro cooling unit realizes visual test at the later stage, the micro cooling unit is used for analyzing the flow state of the fluid in the micro channel.
2. The micro cooling unit of claim 1, wherein the width of the micro channels between adjacent fins is 20um to 100 um.
3. A micro-cooling unit according to claim 1, wherein the micro-channels are shaped as straight channels, periodic interrupted straight channels, serpentine channels or periodic cylindrical channels.
4. A method of integrating a micro cooling unit according to any of claims 1-3, comprising: integrating a semiconductor power chip on the metallized surface of the micro cooling unit in a low-thermal resistance bonding mode; grounding the semiconductor power chip; the miniature cooling units are sealed in a box body in a water-tight manner, a cooling liquid distribution pipeline is arranged in a bottom plate of the box body, a cooling liquid inlet and a cooling liquid outlet are arranged on the outer side surface of the box body, a single or arrayed small square groove is arranged on the bottom plate of the box body, the miniature cooling units are installed in the small square groove, two openings are formed in the bottom of the small square groove and used for communicating the cooling liquid inlet and the cooling liquid outlet of each miniature cooling unit with the cooling liquid distribution pipeline in the bottom plate of the box body, and the cooling liquid is distributed into a channel of each miniature cooling unit by the cooling liquid distribution pipeline in the bottom plate of the; the low-thermal-resistance bonded interface material is realized by a nano silver paste sintering process, the low-thermal-resistance bonded interface material comprises nano silver and a binder, a sintering curve is set in a program control furnace to form a porous silver block or film material after a solvent is removed, reasonable void ratio is realized, and a connecting interface with reasonable thermal conductivity is finally obtained; the source, drain and grid bonding points on the semiconductor power chip are connected with the metallized surface on the miniature cooling unit in a lead bonding mode; and four corners of the micro cooling unit are wrapped with gold bands, so that the connection between the upper metalized surface of the micro cooling unit and the lower metalized surface of the micro cooling unit is realized.
5. The method of claim 4, wherein the gold ribbon is pressed by parallel micro gap welding.
6. The method as claimed in claim 4, wherein a step limiting structure is formed at the hole part of the glass cover plate of the micro cooling unit, and a groove limiting structure is formed at the opening part of the box body small square groove, and the step limiting structure and the groove limiting structure are completely matched.
7. An integrated arrangement of micro cooling units, comprising a micro cooling unit according to any of claims 1-3, a semiconductor power chip and a box, the semiconductor power chip being integrated to the metallized surface of the micro cooling unit by means of low thermal resistance bonding, and the semiconductor power chip being grounded; miniature cooling unit water proofness encapsulation is to the box body, be provided with coolant liquid distribution pipeline in the box body bottom plate, the box body lateral surface is provided with coolant liquid entry and coolant liquid export, be provided with single or little square groove of arraying on the box body bottom plate, miniature cooling unit installs in little square groove, little square groove bottom is provided with two openings, a coolant liquid entry and the coolant liquid export for realizing miniature cooling unit and the coolant liquid distribution pipeline intercommunication in the box body bottom plate, coolant liquid distribution pipeline in the box body bottom plate distributes the coolant liquid to every miniature cooling unit's runner in.
8. The integrated device of a micro cooling unit according to claim 7, wherein the interface material of the low thermal resistance bonding manner is realized by a nano sintered silver paste process, and the material itself comprises nano silver and a binder.
9. The integrated device of a micro cooling unit according to claim 7, wherein the semiconductor power chip is grounded by: the source electrode, the drain electrode and the grid electrode bonding point on the semiconductor power chip are connected with the metallized surface on the miniature cooling unit in a lead bonding mode; the upper metalized surface of the micro cooling unit is connected with the lower metalized surface of the micro cooling unit through gold bands at four corners of the micro cooling unit.
10. The integrated device of a micro-cooling unit as claimed in claim 9, wherein the gold ribbon is pressed by parallel micro-gap welding.
11. The integrated device of a micro cooling unit according to claim 7, wherein the hole part of the micro cooling unit glass cover plate is processed with a step limiting structure, the opening part of the box body small square groove is processed with a groove limiting structure, and the step limiting structure is completely matched with the groove limiting structure.
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| CN115468332B (en) * | 2022-08-26 | 2024-10-01 | 武汉高芯科技有限公司 | Throttling refrigerator and throttling refrigeration infrared detector |
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