CN102280540A - Light emitting diode (LED) module with microchannel radiator and method for making LED module - Google Patents
Light emitting diode (LED) module with microchannel radiator and method for making LED module Download PDFInfo
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- CN102280540A CN102280540A CN2011102379767A CN201110237976A CN102280540A CN 102280540 A CN102280540 A CN 102280540A CN 2011102379767 A CN2011102379767 A CN 2011102379767A CN 201110237976 A CN201110237976 A CN 201110237976A CN 102280540 A CN102280540 A CN 102280540A
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- microchannel heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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Abstract
The invention discloses a light emitting diode (LED) module with a microchannel radiator and a method for making the LED module. The LED module mainly comprises a microchannel radiator with micro channels and an LED chip; the microchannel radiator takes silicon as a substrate; the bottom part of the silicon substrate is provided with a plurality of micro channels through which cooling liquid passes; the LED chip is directly and inversely arranged on the microchannel radiator by an alloy process; and the heat generated by the LED chip during working can be conducted onto the microchannel radiator through an alloy layer so as to be further favorable for heat conduction. The LED module has high heat dissipation efficiency, overcomes the defect that the traditional radiator takes hot non-conduction air as a conduction medium, is very applicable for cooling of large-power LED during package, and avoids the problem of excessive heat resistance in the traditional package process. The method is simple and applicable for industrialized production in a large scale.
Description
Technical field
The present invention relates to a kind of led module and preparation method, especially a kind of led module and preparation method with microchannel heat sink.
Background technology
LED (Light Emitting Diode) be called as the 4th generation lighting source or green light source, have characteristics such as energy-saving and environmental protection, the life-span is long, volume is little, can be widely used in fields such as various indications, demonstration, decoration, backlight, general lighting and urban landscape.Heat dissipation problem is one of universal bottleneck problem of restriction great power LED, if heat can not dissipate rapidly, will make the LED junction temperature too high, thereby influence useful life and the reliability of LED.
The heat passage of the LED encapsulation of current main-stream is: extremely consolidate crystal layer by led chip, conduct to substrate, heat-conducting glue and radiator again, this packing forms has produced a plurality of contact heat resistances: the contact heat resistance between chip and the substrate, the contact heat resistance that substrate insulating layer produces, contact heat resistance between substrate and the radiator, these contact heat resistances cause the thermal resistance of whole LED heat passage bigger, are unfavorable for that the heat that PN junction sends reaches heat eliminating medium rapidly.
As long as the low-power LED module is because caloric value is little, and heat dissipation problem is not serious, therefore the general Copper Foil printed circuit board (PCB) of utilization.But along with prevailing of high-capacity LED, the Copper Foil printed circuit board (PCB) has been not enough to deal with radiating requirements.Use at present more widely the LED radiator mainly based on the aluminium base radiator, but because its heat eliminating medium is mainly based on air, and air is the non-conductor of heat, therefore its radiating effect there is very big restriction, moreover, the various contact heat resistances that exist in the conventional package LED mode are unfavorable for realizing the integrated of super-high-power LED under small size, the small size, and also are unfavorable for having prolonged the life-span of LED and improve the reliability that LED uses based on the LED radiator of aluminium base radiator.
Therefore, how to provide a kind of led module and manufacturing technology thereof, to overcome variety of problems of the prior art, the real practitioner's problem demanding prompt solution that has become this area.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of led module and preparation method thereof with microchannel heat sink, bigger with the thermal resistance that solves led module heat passage of the prior art, be unfavorable for realizing the integrated of super-high-power LED under small size, the small size, and problem such as the life-span of LED is not high and reliability is not strong.
Reach other relevant purposes for achieving the above object, the invention provides a kind of preparation method with led module of microchannel heat sink, described preparation method may further comprise the steps at least: step 1, semi-conductive substrate is provided, and grown buffer layer on described Semiconductor substrate successively, N type GaN layer, quantum well layer, and P type GaN layer, on described P type GaN layer, form P type ohmic contact then to prepare the P electrode, then peel off described Semiconductor substrate and remove described resilient coating, on described N type GaN layer, form N type ohmic contact at last to prepare the N electrode, to prepare a led chip; Step 2, provide one have upper and lower surface and around the silicon substrate of side, the lower surface of the described silicon substrate of etching, form a plurality of towards this lower surface opening and run through the raceway groove of relative two sides with bottom at described silicon substrate, then a sealant is bonded to the lower surface of described silicon substrate, so that respectively this raceway groove is formed on a plurality of microchannels in order to the circulation cooling fluid that have import and outlet on the described relative two sides respectively, and form an insulating barrier in the upper surface of described silicon substrate, to prepare a microchannel heat sink; Step 3, on described insulating barrier, make the positive and negative electrode plate, described led chip is just gone up described by the alloy technique upside-down mounting, use then gold wire bonder with a gold wire bonding between described N electrode and described negative electrode plate finishing electric connection, on described positive and negative electrode plate, prepare the positive and negative electrode link that correspondence is electrically connected at an external power source simultaneously respectively; And step 4, on described led chip, apply fluorescent material, carry out embedding by silica gel then, sealing described positive and negative electrode plate, led chip, gold thread and fluorescent material are on the insulating barrier of described microchannel heat sink, carry out baking-curing at last, to finish the preparation of described led module.
In preparation method's of the present invention step 1, also comprise gold-plated step is carried out on the surface of described P electrode and N electrode.Wherein, the growing method of described resilient coating, N type GaN layer, quantum well layer and P type GaN layer is the metallo-organic compound CVD (Chemical Vapor Deposition) method.
In preparation method's of the present invention step 2, the lithographic method of the lower surface of the described silicon substrate of etching is the reactive ion etching method.The width of described raceway groove is 10 μ m to 1000 μ m.Described cooling fluid is pure water, ethanol, is added with the water of nano particle or is added with the ethanol of nano particle.
In preparation method's of the present invention step 2, the material of described sealant is silicon or copper, is bonded to the lower surface of described silicon substrate by the heat conduction encapsulant.Particularly, the bonding method that described sealant is bonded to described silicon substrate lower surface is the anode linkage method.
In preparation method's of the present invention step 2, described insulating barrier is the aluminium nitride material, and the surface of insulating layer of this aluminium nitride material is coated with one deck gold or silver-colored, in order to making described positive and negative electrode plate, with described led chip by the alloy technique upside-down mounting on described positive electrode plate.
In preparation method's of the present invention step 3, be gold-tin alloy with described led chip by the alloy of alloy technique upside-down mounting on described positive electrode plate, particularly, be that the P electrode with described led chip is bonded on the described positive electrode plate by alloy technique.
In preparation method's of the present invention step 4, described fluorescent material is YAG fluorescent material, and described silica gel is the organosilicon that has carried out primary optical design.
The present invention also provides a kind of led module with microchannel heat sink, it comprises at least: microchannel heat sink, comprise one have on, the silicon substrate of side around lower surface reaches, be positioned at the insulating barrier of upper surface of described silicon substrate and the lower surface that is positioned at described silicon substrate and get sealant, the bottom of described silicon substrate forms a plurality of towards this lower surface opening and run through the raceway groove of relative two sides, described seal is bonded to the lower surface of described silicon substrate, so that respectively this raceway groove is formed on a plurality of microchannels in order to the circulation cooling fluid that have import and outlet on the described relative two sides respectively; The positive and negative electrode plate is apart from one another by being arranged on the described insulating barrier, and has the positive and negative electrode link that is electrically connected at an external power source respectively; At least one led chip, be inverted on the described positive electrode plate, comprise P type GaN layer, be positioned at the quantum well layer on the described P type GaN layer and be positioned on the described quantum well layer and have the N type GaN layer of N electrode with P electrode, wherein, described N electrode is connected with described negative electrode plate by a gold thread; Fluorescent material is coated on the described N electrode; And layer of silica gel, can on described insulating barrier, and with described positive and negative electrode plate, led chip, gold thread and fluorescent material sealing are wherein.
In led module of the present invention, described led chip is upside down on the described positive electrode plate by gold-tin alloy technology.Particularly, described P electrode is connected on the described insulating barrier by alloy technique.
In led module of the present invention, the width of described raceway groove is 10 μ m to 1000 μ m.Described cooling fluid is pure water, ethanol, be added with the water of nano particle or be added with the ethanol of nano particle.Described sealant is silicon or copper, and is bonded to the lower surface of described silicon substrate by the heat conduction encapsulant.Described fluorescent material is YAG fluorescent material.Described layer of silica gel is the organic silica gel that has carried out primary optical design.
In led module of the present invention, described led chip is two or more, and is electrically connected between the described positive and negative electrode plate in the mode of series, parallel or series-parallel connection.
As mentioned above, the led module that makes via preparation method of the present invention mainly comprises microchannel heat sink and the led chip with minitype channel, wherein, described microchannel heat sink is substrate with silicon, and the bottom of this silicon substrate has a plurality of microchannels in order to the circulation cooling fluid, because the characteristic size of this microchannel, has bigger volume/area at 10 μ m to 1000 μ m than advantages such as, the higher advection heat coefficient of conductivity, less quality and volumes.On described microchannel heat sink, the heat that is produced in this led chip work just can be transmitted on the described microchannel heat sink by alloy-layer described led chip, so that it can heat of cooling current density reach 790W/cm by the direct upside-down mounting of alloy technique
2Integrated circuit, be highly suitable for the cooling of high heat flux packaging.Thereby, led module of the present invention is more conducive to heat conduction, has very high radiating efficiency, having overcome the traditional heat-dissipating device is the defective of transmitting medium with the non-conductor air of heat, be very suitable for the cooling of high-power LED encapsulation, avoided the too much problem of thermal resistance in the conventional package technology, preparation method's technology of the present invention is simple, can be used for large-scale industrial production.
Description of drawings
Fig. 1 a to Fig. 1 c is shown as the structural representation that is presented in the preparation method's of the present invention step 1.
Fig. 2 a to Fig. 2 b is shown as the horizontal and longitudinal sectional drawing of microchannel heat sink in the led module of the present invention respectively.
Structural representation after the step 3 that Fig. 3 is shown as preparation method of the present invention is finished.
Fig. 4 is shown as the structural representation of finishing the led module that finally presents behind the preparation method of the present invention.
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this specification disclosed.The present invention can also be implemented or be used by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
Notice, the appended graphic structure that illustrates of this specification, ratio, size etc., all only in order to cooperate the content that specification disclosed, understand and reading for person skilled in the art scholar, be not in order to limit the enforceable qualifications of the present invention, event is the technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, not influencing under effect that the present invention can produce and the purpose that can reach, all should still drop on disclosed technology contents and get in the scope that can contain.Simultaneously, that is quoted in this specification reaches the term of " " etc. as " upper surface ", " lower surface ", " left side ", " right side ", " centre ", " two ", also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under no essence change technology contents, when also being considered as the enforceable category of the present invention.
See also Fig. 1 a to Fig. 4, be shown as the led module cross section structure schematic diagram that presents according to each step among the preparation method of the present invention.As shown in the figure, the invention provides a kind of preparation method with led module of microchannel heat sink, described preparation method may further comprise the steps at least:
See also Fig. 1 a to Fig. 1 c, as shown in the figure, at first carry out step 1, prepare a led chip, semi-conductive substrate 11 promptly is provided, the material of this Semiconductor substrate 11 can be silicon, carborundum or sapphire etc.With (CH
3)
3Al (trimethyl aluminium) is Al (aluminium) source, NH
3(ammonia) is N (nitrogen) source, and adopting the metallo-organic compound CVD (Chemical Vapor Deposition) method to grow on described Semiconductor substrate 11 one for example is the resilient coating 12 of AlN (aluminium nitride) material; With (CH
3)
3Ga (trimethyl gallium) is Ga (gallium) source, NH
3Be N source, SiH
4(silane) is used as N type dopant, adopts the metallo-organic compound CVD (Chemical Vapor Deposition) method N type GaN layer 13 of growing on described resilient coating 12; With (CH
3)
3In (trimethyl indium) is In (indium) source, (CH
3)
3Ga is the Ga source, NH
3Be the N source, adopt metallo-organic compound CVD (Chemical Vapor Deposition) method growing InGaN/GaN multiple quantum well layer 14 on described N type GaN layer 13; (CH
3)
3Ga is the Ga source, NH
3Be the N source, Mg (C
5H
5)
2(two luxuriant magnesium) adopts metallo-organic compound CVD (Chemical Vapor Deposition) method growth P-type GaN layer 15 on described InGaN/GaN multiple quantum well layer 14 as P type dopant; On described P type GaN layer 15, prepare one deck Ag (silver) reflector layer (diagram) then and form P type ohmic contact by the method for bonding, gold-plated by evaporation or ion sputtering method on described Ag reflector layer to prepare P electrode 16, then utilize the method for etching to peel off described Semiconductor substrate 11 and remove described resilient coating 12, at last on described N type GaN layer 13 by evaporation or the gold-plated formation of ion sputtering method N type ohmic contact to prepare N electrode 17, to prepare described led chip 1.
See also Fig. 2 a to Fig. 2 b, as shown in the figure, then carry out step 2, provide one have on, the silicon substrate 21 of side around lower surface reaches, adopt the lower surface of the described silicon substrate 21 of reactive ion etching method etching, so that to form a plurality of width be 10 μ m to 1000 μ m to the bottom at described silicon substrate 21 towards this lower surface opening and run through the raceway groove of relative two sides, utilize anode linkage technology to be bonded to the lower surface of described silicon substrate 21 one sealant 23 then, so that respectively this raceway groove be formed on have import 221 on the described relative two sides respectively and export 222 in order to the circulation cooling fluid (diagram) a plurality of microchannels 22, in the present embodiment, sealing layer 23 is silicon or copper.Described cooling fluid is pure water, ethanol, is added with the water of nano particle or is added with the ethanol of nano particle.At last with (CH
3)
3Al is the Al source, NH
3Be the N source, adopting the metallo-organic compound CVD (Chemical Vapor Deposition) method for example is the insulating barrier 24 of AlN material in the upper surface growth of the silicon substrate 21 of described microchannel heat sink, golden or silver-colored in to prepare a microchannel heat sink 2 by evaporation or ion sputtering method plating one deck on described insulating barrier 24 then.
Need to prove that at this import 221 of described microchannel 22 is connected with the power set (diagram) of an outside with outlet 222, so that the described cooling fluid required power that circulates to be provided, and then the circulation of formation cooling fluid, in order to heat conduction.
See also Fig. 3, as shown in the figure, carry out step 3 then, on described insulating barrier 24, just making, negative electrode plate 31 and 32, described led chip 1 is passed through the alloy technique upside-down mounting on described positive electrode plate 31, of particular note, in the present embodiment, in step 1, can make two or more led chips 1, thereby in this step, led chip 1 that can two or more are identical on described positive electrode plate 31, has series connection so that prepare by the upside-down mounting of alloy technique difference in follow-up step, parallel connection or series-parallel connection two or the led module of individual led chip 1 between described positive electrode plate 31 and negative electrode plate 32.
Use gold wire bonder that one spun gold 6 is bonded between described N electrode 17 and the described negative electrode plate 32 to finish electric connection then, on described positive and negative electrode plate 31 and 32, prepare the positive and negative electrode link 33 and 34 that correspondence is electrically connected at an external power source simultaneously respectively; The described P electrode 16 of described led chip 1 is passed through the alloy technique upside-down mounting on described positive electrode plate 31, and in the present embodiment, the alloy of employing is a gold-tin alloy.
See also Fig. 4, as shown in the figure, carry out step 4 at last, on described led chip 1, apply YAG fluorescent material 5, carry out embedding by organic silica gel 7 then, to seal described positive electrode plate 31, negative electrode plate 32 through primary optical design, led chip 1, gold thread 6 and fluorescent material 5 carry out baking-curing at last on the insulating barrier 24 of described microchannel heat sink, to finish the preparation of described led module.
The present invention also provides a kind of led module with microchannel heat sink, sees also Fig. 4, and as shown in the figure, described led module comprises: microchannel heat sink 2, positive and negative electrode plate 31 and 32, two or more led chips 1, fluorescent material 5, and layer of silica gel 7.
Described microchannel heat sink 2 comprise one have on; the silicon substrate 21 of side around lower surface reaches; be deposited on the insulating barrier 24 of the upper surface of described silicon substrate 21 by the metallo-organic compound CVD (Chemical Vapor Deposition) method; the material of this insulating barrier is AlN; to protect described microchannel heat sink 2 and to be positioned at the sealant 23 of silicon substrate lower surface; a plurality of width are arranged at the bottom of described silicon substrate 21 is 10 μ m to 1000 μ m towards this lower surface opening and runs through the raceway groove of relative two sides; described sealant 23 is bonded to the lower surface of described silicon substrate 21; the material of sealing layer 23 is silicon or copper; so that respectively this raceway groove be formed on have import 221 on the described relative two sides respectively and export 222 in order to the circulation cooling fluid a plurality of microchannels 22, be shown in Fig. 2 a.The ethanol that the cooling fluid of this microchannel 22 circulations is pure water, ethanol, be added with the water of nano particle or be added with nano particle.
Of particular note, the import 221 of described microchannel 22 is connected with the power set (diagram) of an outside with outlet 222, so that the described cooling fluid required power that circulates to be provided, and then the circulation of formation cooling fluid, in order to heat conduction.
Described positive electrode plate 31 be a gold or silver-colored with the material of negative electrode plate 32, by deposit then the method for etching be prepared at interval on the described insulating barrier 24, and have positive electrode link 33 and the negative electrode link 34 that is electrically connected at an external power source respectively.
One deck gold-tin alloy layer 4 of described gold-tin alloy layer 4 on positive electrode plate 31, forming by described alloy technique.
Described led chip 1 comprises: have the P type GaN layer 15 of P electrode 16, the material of described P electrode is a gold, link to each other with gold-tin alloy layer 4, between described P electrode 16 and the P type GaN layer 15 in addition one deck be bonded to silver-colored reflector layer (diagram) on the P type GaN layer 15; Be positioned at the InGaN/GaN multiple quantum well layer 14 on the described P type GaN layer; And be positioned on the described InGaN/GaN multiple quantum well layer 14 and have the N type GaN layer 13 of N electrode 17, the material of described N electrode 17 is a gold, wherein, a gold thread 6 is connected between described N electrode 17 and the described negative electrode plate 32 by the gold wire bonder bonding.
Of particular note, in the present embodiment, described led chip 1 is two, and is electrically connected between described positive and negative electrode plate 31 and 32 in the mode of series connection.Certainly, the assentment actual demand, in other execution mode, described led chip 1 also can be a plurality of, adopts the mode of series, parallel or series-parallel connection to be electrically connected between described positive and negative pole plate 31 and 32.
The material of described fluorescent material 5 is a YAG fluorescent material, is coated on the described N electrode 17.
Described layer of silica gel 7 cans are on described insulating barrier 24, and described layer of silica gel is the organic silica gel that has carried out primary optical design, and with described positive electrode plate 31, negative electrode plate 32, led chip 1, gold thread 6 and fluorescent material 5 sealings are wherein.
Technology of the present invention is simple but effect is good, described led chip is passed through the direct upside-down mounting of alloy technique on described microchannel heat sink, the heat that is produced in the described led chip work only needs just can be transmitted on the described microchannel heat sink by described alloy-layer, avoid the too much problem of thermal resistance in the conventional package technology, increased the conduction efficiency of heat greatly.Described microchannel heat sink is substrate with silicon, produce the raceway groove that a plurality of width are 10-1000 μ m at described silicon substrate, described raceway groove passes to fluid media (medium) and carries out heat conduction, having overcome the traditional heat-dissipating device is the defective of transmitting medium with the non-conductor air of heat, have very high radiating efficiency, be very suitable for the cooling of high-power LED encapsulation.Preparation method's technology of described led module with microchannel heat sink is simple, can be used for large-scale industrial production.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and the foregoing description is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of being finished under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (22)
1. the preparation method with led module of microchannel heat sink is characterized in that, described preparation method may further comprise the steps at least:
Step 1, semi-conductive substrate is provided, and grown buffer layer on described Semiconductor substrate successively, N type GaN layer, quantum well layer, and P type GaN layer, on described P type GaN layer, form P type ohmic contact then to prepare the P electrode, then peel off described Semiconductor substrate and remove described resilient coating, on described N type GaN layer, form N type ohmic contact at last to prepare the N electrode, to prepare a led chip;
Step 2, provide one have upper and lower surface and around the silicon substrate of side, the lower surface of the described silicon substrate of etching, form a plurality of towards this lower surface opening and run through the raceway groove of relative two sides with bottom at described silicon substrate, then a sealant is bonded to the lower surface of described silicon substrate, so that respectively this raceway groove is formed on a plurality of microchannels in order to the circulation cooling fluid that have import and outlet on the described relative two sides respectively, and form an insulating barrier in the upper surface of described silicon substrate, to prepare a microchannel heat sink;
Step 3, on described insulating barrier, make the positive and negative electrode plate, described led chip is passed through the alloy technique upside-down mounting on described positive electrode plate, use then gold wire bonder with a gold wire bonding between described N electrode and described negative electrode plate finishing electric connection, on described positive and negative electrode plate, prepare the positive and negative electrode link that correspondence is electrically connected at an external power source simultaneously respectively; And
Step 4 applies fluorescent material on described led chip, carry out embedding by silica gel then, sealing described positive and negative electrode plate, led chip, gold thread and fluorescent material are on the insulating barrier of described microchannel heat sink, carry out baking-curing at last, to finish the preparation of described led module.
2. the preparation method with led module of microchannel heat sink according to claim 1 is characterized in that, also comprises in the described step 1 gold-plated step is carried out on the surface of described P electrode and N electrode.
3. the preparation method with led module of microchannel heat sink according to claim 1, it is characterized in that, in the described step 1, the growing method of described resilient coating, N type GaN layer, quantum well layer and P type GaN layer is the metallo-organic compound CVD (Chemical Vapor Deposition) method.
4. the preparation method with led module of microchannel heat sink according to claim 1 is characterized in that, the lithographic method of the lower surface of the described silicon substrate of etching is the reactive ion etching method in the described step 2.
5. the preparation method with led module of microchannel heat sink according to claim 1 is characterized in that, the material of the sealant in the described step 2 is silicon or copper, is bonded to the lower surface of described silicon substrate by the heat conduction encapsulant.
6. the preparation method with led module of microchannel heat sink according to claim 1 is characterized in that, the bonding method that in the described step 2 described sealant is bonded to described silicon substrate lower surface is the anode linkage method.
7. the preparation method with led module of microchannel heat sink according to claim 1 is characterized in that, the width of the described raceway groove in the described step 2 is 10 μ m to 1000 μ m.
8. the preparation method with led module of microchannel heat sink according to claim 1 is characterized in that the cooling fluid in the described step 2 is pure water, ethanol, is added with the water of nano particle or is added with the ethanol of nano particle.
9. the preparation method with led module of microchannel heat sink according to claim 1, it is characterized in that, described insulating barrier is the aluminium nitride material, and the surface of insulating layer of this aluminium nitride material is coated with one deck gold or silver-colored, in order to make described positive and negative electrode plate, so that described led chip is passed through the alloy technique upside-down mounting on described positive electrode plate.
10. the preparation method with led module of microchannel heat sink according to claim 9 is characterized in that, is gold-tin alloy with described led chip by the alloy of alloy technique upside-down mounting on described positive electrode plate in the described step 3.
11. the preparation method with led module of microchannel heat sink according to claim 10 is characterized in that, the P electrode with described led chip in the described step 3 is bonded on the described positive electrode plate by alloy technique.
12. the preparation method with led module of microchannel heat sink according to claim 1 is characterized in that, fluorescent material described in the described step 4 is YAG fluorescent material.
13. the preparation method with led module of microchannel heat sink according to claim 1 is characterized in that, silica gel described in the described step 4 is the organosilicon that has carried out primary optical design.
14. the led module with microchannel heat sink is characterized in that, described led module comprises at least:
Microchannel heat sink, comprise one have upper and lower surface and around the side silicon substrate, be positioned at the insulating barrier of described silicon substrate upper surface and be positioned at the sealant of described silicon substrate lower surface, the bottom of described silicon substrate forms a plurality of towards this lower surface opening and run through the raceway groove of relative two sides, described sealant is bonded to the lower surface of described silicon substrate, so that respectively this raceway groove is formed on a plurality of microchannels in order to the circulation cooling fluid that have import and outlet on the described relative two sides respectively;
The positive and negative electrode plate is apart from one another by being arranged on the described insulating barrier, and has the positive and negative electrode link that is electrically connected at an external power source respectively;
At least one led chip, be inverted on the described positive electrode plate, comprise P type GaN layer, be positioned at the quantum well layer on the described P type GaN layer and be positioned on the described quantum well layer and have the N type GaN layer of N electrode with P electrode, wherein, described N electrode is connected with described negative electrode plate by a gold thread;
Fluorescent material is coated on the described N electrode; And
Layer of silica gel, can on described insulating barrier, and with described positive and negative electrode plate, led chip, gold thread and fluorescent material sealing are wherein.
15. the led module with microchannel heat sink according to claim 14 is characterized in that described led chip is upside down on the described positive electrode plate by gold-tin alloy technology.
16. the led module with microchannel heat sink according to claim 14 is characterized in that, described P electrode is bonded on the described positive electrode plate by alloy technique.
17. the led module with microchannel heat sink according to claim 14 is characterized in that, the width of described raceway groove is 10 μ m to 1000 μ m.
18. the led module with microchannel heat sink according to claim 14 is characterized in that, described cooling fluid is pure water, ethanol, be added with the water of nano particle or be added with the ethanol of nano particle.
19. the led module with microchannel heat sink according to claim 14 is characterized in that, described sealant is silicon or copper, and is bonded to the lower surface of described silicon substrate by the heat conduction encapsulant.
20. the led module with microchannel heat sink according to claim 14 is characterized in that, described fluorescent material is YAG fluorescent material.
21. the led module with microchannel heat sink according to claim 14 is characterized in that, described layer of silica gel is the organic silica gel that has carried out primary optical design.
22. the led module with microchannel heat sink according to claim 14 is characterized in that, described led chip is two or more, and is electrically connected between the described positive and negative electrode plate in the mode of series, parallel or series-parallel connection.
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| CN2011102379767A CN102280540A (en) | 2011-08-18 | 2011-08-18 | Light emitting diode (LED) module with microchannel radiator and method for making LED module |
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| CN2011102379767A CN102280540A (en) | 2011-08-18 | 2011-08-18 | Light emitting diode (LED) module with microchannel radiator and method for making LED module |
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