CN207442182U - A kind of superpower laser - Google Patents
A kind of superpower laser Download PDFInfo
- Publication number
- CN207442182U CN207442182U CN201721464906.4U CN201721464906U CN207442182U CN 207442182 U CN207442182 U CN 207442182U CN 201721464906 U CN201721464906 U CN 201721464906U CN 207442182 U CN207442182 U CN 207442182U
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- laser
- negative electrode
- luminescence unit
- thermal sediment
- water outlet
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Abstract
A kind of superpower laser, including：Positive electrode, the negative electrode above positive electrode and N number of luminescence unit being clipped between positive electrode and negative electrode, luminescence unit is by laser thermal sediment, the negative electrode plate being arranged above laser thermal sediment, the insulating trip being clipped between laser thermal sediment and negative electrode plate and is arranged at the chip of laser of laser thermal sediment one side and forms.Since directly chip of laser is welded on the laser thermal sediment with water inlet I and water outlet I, reduces the assembled interface of common grand multichannel laser device module, be conducive to radiate.The outlet pass of laser thermal sediment is common pore structure, avoids requirement of the micro-channel heat sink to cooling water quality, also reduces the pressure of supply water of cooling water.It can be conducive to improve package quality improvement reliability directly by chip of laser and heat sink progress high-precision patch.
Description
Technical field
The present invention relates to photoelectron technical fields, and in particular to a kind of superpower laser.
Background technology
Because semiconductor laser has, small, power is big, steady performance, and application range is also increasingly wider
It is general.As semiconductor laser output power is higher and higher, semiconductor laser laser welding, laser cutting, laser boring,
The application of the industrial circles such as laser medicine also develops rapidly.It is similarly also higher and higher to the performance requirement of laser.Laser
Performance in addition to related with epitaxial material, the heat dissipation, encapsulation also with laser are related.
The packing forms of currently used high-power semiconductor laser mainly have following two：Microchannel methods for cooling and
Grand passage methods for cooling.Technical process chips, insulating trip, negative electrode and micro channel heat in common microchannel methods for cooling
Heavy to be packaged into a micro-channel units, then multiple micro-channel units form superpower laser modules.Common grand passage is cold
But mode is then the integral solder by the transition heat sink of multiple chips and multiple conductive and heat-conductives (such as copper, copper tungsten) while after welding
On insulating heat-conductive pedestal or by single chip of laser, conductive and heat-conductive is heat sink and insulating heat-conductive piece welds simultaneously, is made half
Qualified laser element is bonded on pedestal by conductor laser luminescence unit, finally fixes electrode, completes high power laser light
The preparation of device.
Although by development for many years, the superpower laser module of microchannel and grand channel form have it is very big into
Step, but these techniques are all there are some shortcomings, it is as follows：
（1）, in micro-channel heat sink technique, be limited to the making of micro-channel heat sink, cost is higher, simultaneously as microchannel
Heat sink water flowing pore size is micron dimension, it is desirable that the pressure of water flowing is higher, if held when module assembled procedure seals are bad
Easy leak causes device failure, while the size of water flowing is small, more demanding to the degree of purity of cooling water, it is necessary to which deionized water, prevents
It only blocks, this also in a disguised form adds use cost.These are all unfavorable for the popularization and application of superpower laser module.
（2）, grand via process although reduce cost of manufacture and use cost, but there are the high qualification rate of technological requirement is low
Problem.Because, it is necessary to precise clamp and align when several semiconductor laser luminescence units are bonded, while chip of laser
Thickness only has 0.1mm or so, and the thickness of transition heat sink generally also only has 1mm or so.Two adjacent luminescence units pass through solder
In the presence of the greater risk of short circuit during bonding, while also because size is small to have welding cavity when luminescence unit is bonded on insulating trip
Or the hidden danger of not prison welding, cause device weak heat-dissipating, reliability and service life reduction.
The content of the invention
The utility model provides a kind of raising laser qualification rate, improves bonding to overcome the shortcomings of more than technology
The high superpower laser of quality.
Technical solution is used by the utility model overcomes its technical problem：
A kind of superpower laser, including：Positive electrode, the negative electrode above positive electrode and N number of it is clipped on positive electricity
Luminescence unit between pole and negative electrode, the luminescence unit is by laser thermal sediment, the negative electricity being arranged above laser thermal sediment
Pole piece, the insulating trip being clipped between laser thermal sediment and negative electrode plate and the laser core for being arranged at laser thermal sediment one side
Piece is formed, and is provided with water inlet II and water outlet II on the positive electrode, water inlet and water outlet are provided on the luminescence unit
Mouthful I, mounting hole is provided on the luminescence unit, is provided with screw hole on the positive electrode, and screw sequentially passes through negative electrode and each
A luminescence unit（3）On mounting hole after be combined in screw hole, and the water inlet I on each luminescence unit is identical with water inlet II
Axis, water outlet I and II same axis of water outlet on each luminescence unit.
In order to improve leakproofness, O-ring seal is provided between the water inlet I of above-mentioned each luminescence unit, it is each to shine
O-ring seal is provided between the water outlet I of unit, is provided with O-ring seal between the water inlet I and water inlet II, institute
It states and is provided with O-ring seal between water outlet I and water outlet II.
Preferably, above-mentioned laser thermal sediment is made of copper or tungsten copper or conductive SiC material.
Preferably, above-mentioned negative electrode plate is made of copper or ag material.
Preferably, above-mentioned insulating trip is made of policapram material.
Preferably, the surface of above-mentioned negative electrode plate, laser thermal sediment, negative electrode and positive electrode is gold-plated by gold-plated formation
Layer.
The beneficial effects of the utility model are：Since chip of laser directly is welded on band water inlet I and water outlet I
Laser thermal sediment on, reduce the assembled interface of common grand multichannel laser device module, be conducive to radiate.Laser thermal sediment leads to
The mouth of a river is common pore structure, avoids requirement of the micro-channel heat sink to cooling water quality, also reduces the pressure of supply water of cooling water.
It can be conducive to improve package quality improvement reliability directly by chip of laser and heat sink progress high-precision patch.Due to negative
Electrode, each luminescence unit and positive electrode are fixed by screw, reduce welding times, can avoid multiple welding pair
The damage of chip of laser.By the implementation of the invention, the encapsulation skill of superpower laser module can be generally reduced
Art difficulty, and it is obviously improved the yield rate and uniformity of superpower laser module, mass production easy to implement.
Description of the drawings
Fig. 1 is the dimensional structure diagram of the utility model；
Fig. 2 is the dimensional structure diagram of the luminescence unit of the utility model；
In figure, 1. negative electrode, 2. water inlet, I 3. luminescence unit, 4. water outlet, I 5. positive electrode, 6. screw hole, 7. screw
8. 12. negative electrode plate of water inlet II 9. water outlet, II 10. laser thermal sediment, 11. insulating trip, 13. chip of laser 14. is solid
Determine hole.
Specific embodiment
Below in conjunction with the accompanying drawings 1, attached drawing 2 is described further the utility model.
A kind of superpower laser, including：It positive electrode 5, the negative electrode 1 above positive electrode 5 and N number of is clipped on just
Luminescence unit 3 between electrode 5 and negative electrode 1, luminescence unit 3 by laser thermal sediment 10, be arranged at the top of laser thermal sediment 10
Negative electrode plate 12, the insulating trip 11 that is clipped between laser thermal sediment 10 and negative electrode plate 12 and be arranged at laser thermal sediment
The chip of laser 13 of 10 one sides is formed, and water inlet II 8 and water outlet II 9 are provided on positive electrode 5, is set on luminescence unit 3
Water inlet I 2 and water outlet I 4 are equipped with, mounting hole 14 is provided on luminescence unit 3, screw hole 6, screw 7 are provided on positive electrode 5
It is combined on after sequentially passing through the mounting hole 14 on negative electrode 1 and each luminescence unit 3 in screw hole 6, and on each luminescence unit 3
Water inlet I 2 and II 8 same axis of water inlet, water outlet I 4 and II 9 same axis of water outlet on each luminescence unit 3.Due to
Directly chip of laser 13 is welded on the laser thermal sediment 10 with water inlet I 2 and water outlet I 4, is reduced common grand
The assembled interface of multichannel laser device module, is conducive to radiate.The outlet pass of laser thermal sediment is common pore structure, is avoided micro- logical
The requirement that road is heat sink to cooling water quality also reduces the pressure of supply water of cooling water.The structure size is larger simultaneously, can be direct
By chip of laser and heat sink progress high-precision patch, be conducive to improve package quality improvement reliability.Due to negative electrode 1, respectively
A luminescence unit 3 and positive electrode 5 are fixed by screw 7, reduce welding times, can avoid multiple welding to laser
The damage of device chip.By the implementation of the invention, the encapsulation technology that can generally reduce superpower laser module is difficult
Degree, and it is obviously improved the yield rate and uniformity of superpower laser module, mass production easy to implement.
Embodiment 1：
Further, O-ring seal is provided between the water inlet I 2 of each luminescence unit 3, each luminescence unit 3
O-ring seal is provided between water outlet I 4, O-ring seal, water outlet I are provided between water inlet I 2 and water inlet II 8
O-ring seal is provided between 4 and water outlet II 9.O-ring seal can be improved between each water outlet and each water inlet
Leakproofness, prevent leakage happen.
Embodiment 2：
Preferably, laser thermal sediment 10 is made of copper or tungsten copper or conductive SiC material.
Embodiment 3：
Preferably, negative electrode plate 12 is made of copper or ag material.
Embodiment 4：
Preferably, insulating trip 11 is made of policapram material.
Embodiment 5：
Preferably, the surface of negative electrode plate 12, laser thermal sediment 10, negative electrode 1 and positive electrode 5 is plated by gold-plated formed
Layer gold.
Claims (6)
1. a kind of superpower laser, which is characterized in that including：Positive electrode（5）, positioned at positive electrode（5）The negative electrode of top（1）
And N number of it is clipped on positive electrode（5）With negative electrode（1）Between luminescence unit（3）, the luminescence unit（3）By laser heat
It is heavy（10）, be arranged at laser thermal sediment（10）The negative electrode plate of top（12）, be clipped on laser thermal sediment（10）With negative electrode plate
（12）Between insulating trip（11）And it is arranged at laser thermal sediment（10）The chip of laser of one side（13）It forms, the positive electricity
Pole（5）On be provided with water inlet II（8）And water outlet II（9）, the luminescence unit（3）On be provided with water inlet I（2）And water outlet
Mouth I（4）, the luminescence unit（3）On be provided with mounting hole（14）, the positive electrode（5）On be provided with screw hole（6）, screw（7）
Sequentially pass through negative electrode（1）And each luminescence unit（3）On mounting hole（14）After be combined on screw hole（6）In, and it is each luminous
Unit（3）On water inlet I（2）With water inlet II（8）Same axis, each luminescence unit（3）On water outlet I（4）With water outlet
Mouth II（9）Same axis.
2. superpower laser according to claim 1, it is characterised in that：Each luminescence unit（3）Water inlet I
（2）Between be provided with O-ring seal, each luminescence unit（3）Water outlet I（4）Between be provided with O-ring seal, it is described into
The mouth of a river I（2）With water inlet II（8）Between be provided with O-ring seal, the water outlet I（4）With water outlet II（9）Between set
There is O-ring seal.
3. superpower laser according to claim 1, it is characterised in that：The laser thermal sediment（10）Using copper or tungsten
Copper or conductive SiC material are made.
4. superpower laser according to claim 1, it is characterised in that：The negative electrode plate（12）Using copper or silver-colored material
Material is made.
5. superpower laser according to claim 1, it is characterised in that：The insulating trip（11）Using policapram material
Material is made.
6. superpower laser as claimed in any of claims 1 to 5, it is characterised in that：The negative electrode plate
（12）, laser thermal sediment（10）, negative electrode（1）And positive electrode（5）Surface pass through gold-plated formation Gold plated Layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721464906.4U CN207442182U (en) | 2017-11-07 | 2017-11-07 | A kind of superpower laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721464906.4U CN207442182U (en) | 2017-11-07 | 2017-11-07 | A kind of superpower laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207442182U true CN207442182U (en) | 2018-06-01 |
Family
ID=62291153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721464906.4U Active CN207442182U (en) | 2017-11-07 | 2017-11-07 | A kind of superpower laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207442182U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429457A (en) * | 2019-08-19 | 2019-11-08 | 北京东方锐镭科技有限公司 | A kind of hot and cold water sink component for laser crystal |
| WO2020088251A1 (en) * | 2018-10-29 | 2020-05-07 | 深圳市中光工业技术研究院 | Semiconductor laser device |
-
2017
- 2017-11-07 CN CN201721464906.4U patent/CN207442182U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020088251A1 (en) * | 2018-10-29 | 2020-05-07 | 深圳市中光工业技术研究院 | Semiconductor laser device |
| CN110429457A (en) * | 2019-08-19 | 2019-11-08 | 北京东方锐镭科技有限公司 | A kind of hot and cold water sink component for laser crystal |
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