CN102522695A - Nano silver soldering paste packaged 60-watt 808-nano high-power semiconductor laser module and packaging method thereof - Google Patents
Nano silver soldering paste packaged 60-watt 808-nano high-power semiconductor laser module and packaging method thereof Download PDFInfo
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- CN102522695A CN102522695A CN2011104396502A CN201110439650A CN102522695A CN 102522695 A CN102522695 A CN 102522695A CN 2011104396502 A CN2011104396502 A CN 2011104396502A CN 201110439650 A CN201110439650 A CN 201110439650A CN 102522695 A CN102522695 A CN 102522695A
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Abstract
The invention discloses a nano silver soldering paste packaged 60-watt 808-nano high-power semiconductor laser module and a packaging method thereof. The packaging method includes: using a heat sink (1) as an anode block of a 60-watt 808-nano high-power semiconductor laser, using nano silver soldering paste (2) as chip connection materials to package a bar (3) of the 60-watt 808-nano high-power semiconductor laser, using a ceramic plate (4) to partition the anode and cathode of a device, using a copper foil (5) to connect the upper surface of the bar with the upper surface of the ceramic plate, and using a screw (7) to connect a cathode block (6) so that the packaging is complete. The bar is connected by low-temperature sintering technique, and the nano silver soldering paste serves as the connecting materials for the bar, so that coating can be conveniently completed by using the screen printing method, coating time can be saved effectively, and coating thickness can be controlled. Further, since the nano silver soldering paste turns into pure silver after sintering, thermal resistance of the semiconductor laser package module can be reduced, photoelectric converting efficiency can be improved, and foundation is established for developing of high-power semiconductor laser arrays in future.
Description
Technical field
The present invention relates to a kind of package module and method for packing thereof of 60 watt of 808 nanometer high power semiconductor lasers, belong to high power semiconductor lasers device improvement technology.
Background technology
At present, mainly be made up of this several sections for the module of 60 watt of 808 nanometer high power semiconductor lasers: heat sink (anodal piece), GaAs based crust bar, the chip of 60W 808nm that is encapsulated on heat sink connect material, gold-plated potsherd, Copper Foil and negative pole piece and form.At present, the product of 60 watt of 808 nanometer high-power semiconductor laser module of the main flow on the market is to be main with the indium scolder, though the fusing point of indium scolder is low, can effectively discharge stress and good plastic deformation ability and wettability are arranged; But it is oxidation very easily; Indium also ELECTROMIGRATION PHENOMENON can occur under the big electric current, when high-temperature gradient, is prone to produce the electric heating migration, and this causes the cavity occurring between chip and heat radiation substrate; Cause heat or thermal stress to produce, reliability sharply descends.And the indium scolder will form intermetallic compound with the substrate coated metal in laser works after a period of time, and for example the indium scolder forms fragile AuIn alloy phase with gold easily, thereby causes laser fails.Welding quality is directly determining the quality of high power semiconductor lasers heat dispersion.In welding procedure, usually can be owing to the out-of-flatness of heat sink surface, the intrusion of impurity, or greasy dirt the solder layer cavity that uncertain factor causes such as be infected with, the cavity in the solder layer is remarkable to the influence of the heat dissipating state of device.And the crust bar (chip) of single crust bar semiconductor laser device is made up of several luminescence units.Each luminescence unit is for being connected in parallel mutually noninterfere.The light that semiconductor laser sent is to be formed by all optical superposition that luminescence unit sent.In the process of semiconductor laser work, each luminescence unit temperature evenly rises.If the chip linkage interface is complete, then the degree of each luminescence unit temperature rising will be uniformly, so wave length shift is also even, and the spectrum of light that semiconductor laser sends is exactly the Gaussian of standard like this; And imperfect when the chip linkage interface, when for example in the solder layer cavity being arranged, the luminescence unit radiating effect that is positioned at the top, cavity will be had a greatly reduced quality, and the temperature of these luminescence units will sharply rise, and forms a localized hyperthermia district.Like this, what the wavelength shift of these luminescence units will be than other position luminescence units is big, has just departed from Gaussian originally after the optical superposition that each luminescence unit sent, and produces spectrum widening.Therefore, need connect the high-performance that material improves or more bring the realization device to the high power semiconductor lasers chip.
Summary of the invention
One of the object of the invention is to provide a kind of method for packing of 60 watt of 808 nanometer high-power semiconductor laser module, and 60 watt of 808 nanometer high-power semiconductor laser module so that this method makes uses low-temperature sintering technology, and operating process is simple, and is energy-conservation.
Two of the object of the invention is to provide a kind of 60 watt of 808 nanometer high power semiconductor lasers package module, and this module is used new chip to connect material and encapsulated, and makes that the module thermal resistance of processing is little, and integrated level is high, and electricity conversion is high, energy-conserving and environment-protective.
The present invention realizes through following technical proposals:
What the present invention relates to is a kind of package module of 60 watt of 808 nanometer high power semiconductor lasers; Be to go up the GaAs based crust bar (3) of encapsulation in heat sink (1); Heat sinkly adopt between the bar nano mattisolda (2) as being connected material with crust; Use gold-plated potsherd (4) that the both positive and negative polarity of device is separated by, use Copper Foil (5) to connect the upper surface of crust bar upper surface and potsherd then, fix the encapsulation that negative pole piece (6) is promptly accomplished this device with screw (7).
The method for packing of the package module of 60 watt of 808 nanometer high power semiconductor lasers of the present invention may further comprise the steps:
1) method of use silk screen printing goes up the position that use adhesive tape (8) chooses coating nano mattisolda (2) in heat sink (1), puts up a framework that is similar to silk screen in the silk screen printing;
2) method that adopts silk screen printing is coated on the position of adhesive tape control equably with nano mattisolda, with the THICKNESS CONTROL of nano mattisolda in 50um;
3) remove adhesive tape, paste in the heat sink surface of coated nano mattisolda and put GaAs based crust bar (3) well;
4) after crust bar position places, be placed on the sintering furnace posting crust the heat sink of bar; Low-temperature sintering connects the crust bar, and low sintering condition is earlier temperature to be risen to 50 ℃ from room temperature with the speed of 3 ℃ of per minutes, is incubated 30 minutes; Continue then to rise to 100 ℃, be incubated 30 minutes with the speed of 5 ℃ of per minutes; Speed with 5 ℃ of per minutes rises to 180 ℃ again, is incubated 10 minutes; Be warming up to 280 ℃ at last rapidly, be incubated and drop to room temperature after 30 minutes and get final product;
5) connect crust and treat that the module temperature drops to after the room temperature behind the bar, potsherd (4) and use Copper Foil (5) to connect crust bar upper surface and potsherd upper surface bonds on heat sink;
6) negative pole piece (6) is accomplished with the i.e. encapsulation that is fixed together of screw (7) and anodal piece.
Specify as follows:
Package module of the present invention is respectively nano mattisolda connects 60 watt of 808 nanometer high power semiconductor lasers of material as the crust bar front view, vertical view and end view like Fig. 1 (a) and (b) with (c).Be to go up encapsulation crust bar (3) in heat sink (1); Heat sinkly adopt between the bar nano mattisolda (2) as being connected material with crust; Use potsherd (4) that the both positive and negative polarity of device is separated by, use Copper Foil (5) to connect crust bar and potsherd then, fix the encapsulation that negative pole piece (6) is promptly accomplished this device with screw (7).What the connection material of the crust bar in the module used is nano mattisolda, and the method for using nano mattisolda can be convenient to use silk screen printing is carried out plated film, can practice thrift the time of plated film effectively; The control thickness; And the nano mattisolda behind the sintering is a fine silver, makes that the package module thermal resistance of this 60 watt of 808 nanometer high power semiconductor lasers is little, and integrated level is high; Electricity conversion is high, energy-conserving and environment-protective.
The method that in encapsulation process, adopts silk screen printing can save time at heat sink coating nano mattisolda effectively, can well control the thickness of nano mattisolda simultaneously; The realization chip connects, and is fine silver behind the nano mattisolda sintering, has brought very big improvement for the Performance And Reliability of device itself; Make that the thermal resistance of device is little; Integrated level is high, and electricity conversion is high, energy-conserving and environment-protective.
For the improvement ability to device heat radiation situation is used behind the nano mattisolda in better reflection; Analog computation simultaneously the use conventional solder; Comprising indium scolder and golden tin solder, the maximum temperature when encapsulating same type promptly 60 watt of 808 nanometer high power semiconductor lasers moving under ecotopia.Structure maximum temperature and active area maximum temperature analog computation result when three kinds of different chips connection materials are applied to 60 watt of 808 nanometer high power semiconductor lasers are as shown in table 1 below.
Table 1, structure maximum temperature and active area maximum temperature analog computation result when three kinds of different chips connection materials are applied to the single crust of 60W 808nm CS-Mount conduction refrigeration bar continuous wave high power semiconductor lasers
| Chip connects material | The structure maximum temperature/℃ | The active area maximum temperature/℃ |
| Nano mattisolda | 73.188 | 57.959 |
| The indium scolder | 73.739 | 58.571 |
| The gold tin solder | 78.638 | 64.877 |
Simulation value contrast from form can obtain, and uses nano mattisolda to connect material as the chip of 60 watt of 808 nanometer high power semiconductor lasers, can make device obtain best radiating effect.The more important thing is that better heat radiating effect all is vital for the useful life and the reliability of device, have good application prospects so use nano mattisolda utilizing high power semiconductor laser chip to connect.
The invention has the advantages that the method for use silk screen printing can well be controlled the thickness and the uniformity of nano mattisolda in encapsulation process, saves time and the energy; And behind the use nano mattisolda, because its good heat conduction, conduction and dystectic characteristic; Make that the thermal resistance of laser is little; Integrated level is high, and electricity conversion is high, energy-conserving and environment-protective.Lay the foundation for developing the ultra-high power semiconductor laser array from now on.
Description of drawings
Fig. 1 (a) and (b) with (c) shown in, be respectively nano mattisolda connects 60 watt of 808 nanometer high power semiconductor lasers of material as the crust bar front view, vertical view and end view.
Fig. 2 is the concrete making flow chart of the inventive method.
Embodiment
Process of the present invention is specified as 60 watt of 808 nanometer high-power semiconductor laser module that the crust bar connects material below in conjunction with nano mattisolda shown in the drawings.
Nano mattisolda of the present invention connects the single crust of the 60 watt of 808 nanometer bar high-power semiconductor laser module of material as the crust bar; Like Fig. 1, this module is connected material, potsherd, Copper Foil and negative pole piece and is formed by heat sink (anodal piece), the crust bar that is encapsulated in 60 watt of 808 nanometer on heat sink, chip.Select the good copper billet of heat conductivility as heat sink base material.It is the good heat radiating that the good nano mattisolda of heat conductivility can guarantee chip that chip connects material.This module adopts nano mattisolda to connect material as the crust bar, will cling to bar be encapsulated in heat sink on, use potsherd that the both positive and negative polarity of device is separated by, connect with Copper Foil then and cling to bar and potsherd, be screwed the encapsulation that the negative pole piece is promptly accomplished this device.
This nano mattisolda is mainly accomplished through following steps as the single crust of the 60 watt of 808 nanometer bar high-power semiconductor laser module that the crust bar connects material:
(1) like the step a among Fig. 3, b; Be coated with nano mattisolda in heat sink surface: the method for using silk screen printing; On heat sink, use adhesive tape to choose the position of coating nano mattisolda; Put up a framework that is similar to silk screen in the silk screen printing with adhesive tape, the thickness that its purpose is to control nano mattisolda make its be evenly distributed in heat sink on; Adopt the method for silk screen printing that nano mattisolda is coated on the position that adhesive tape is controlled equably then, the THICKNESS CONTROL of nano mattisolda is in 50um.
(2) like the step c among Fig. 3, place the crust bar: remove adhesive tape and use the suction pen to post the crust bar in the heat sink surface of coated nano mattisolda.
(3) low-temperature sintering connects the crust bar: after crust bar position places, be placed on the sintering furnace posting crust the heat sink of bar, thereby connect the crust bar according to the rework profile low-temperature sintering nano mattisolda of sintering.Low sintering process is earlier temperature to be risen to 50 ℃ from room temperature with the speed of 3 ℃ of per minutes, is incubated 30 minutes; Continue then to rise to 100 ℃, be incubated 30 minutes with the speed of 5 ℃ of per minutes; Speed with 5 ℃ of per minutes rises to 180 ℃ again, is incubated 10 minutes; Be warming up to 280 ℃ at last rapidly, be incubated and drop to room temperature after 30 minutes and get final product.
(4) connect crust bar and potsherd with Copper Foil: treat that the module temperature drops to after the room temperature, uses Copper Foil to connect crust bar and potsherd.
(5) the negative pole piece is installed: the negative pole piece that is screwed device is promptly accomplished whole encapsulation.
Claims (2)
1. the package module of 60 watt of 808 nanometer high power semiconductor lasers of nano mattisolda encapsulation; It is characterized in that on heat sink, encapsulating the crust bar; Adopt nano mattisolda as being connected material between heat sink and the crust bar; Use gold-plated potsherd that the both positive and negative polarity of device is separated by, connect the upper surface of crust bar upper surface and potsherd then with Copper Foil, be screwed the encapsulation that the negative pole piece is promptly accomplished this device.
2. the method for packing of 60 watt of 808 nanometer high-power semiconductor laser module of the nano mattisolda of claim 1 encapsulation is characterized in that may further comprise the steps:
1) method of use silk screen printing uses adhesive tape to choose the position of coating nano mattisolda on heat sink, puts up a framework that is similar to silk screen in the silk screen printing;
2) method that adopts silk screen printing is coated on the position of adhesive tape control equably with nano mattisolda, with the THICKNESS CONTROL of nano mattisolda in 50um;
3) remove adhesive tape, paste in the heat sink surface of coated nano mattisolda and put the crust bar well;
4) after the crust bar places, be placed on the sintering furnace posting crust the heat sink of bar; Low-temperature sintering connects the crust bar, and low sintering condition is earlier temperature to be risen to 50 ℃ from room temperature with the speed of 3 ℃ of per minutes, is incubated 30 minutes; Continue then to rise to 100 ℃, be incubated 30 minutes with the speed of 5 ℃ of per minutes; Speed with 5 ℃ of per minutes rises to 180 ℃ again, is incubated 10 minutes; Be warming up to 280 ℃ at last rapidly, be incubated and drop to room temperature after 30 minutes;
5) connect crust and treat that the module temperature drops to after the room temperature behind the bar, bonding potsherd and use Copper Foil to connect crust bar and potsherd on heat sink;
6) the negative pole piece is fixed together with screw and anodal piece.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011104396502A CN102522695A (en) | 2011-12-23 | 2011-12-23 | Nano silver soldering paste packaged 60-watt 808-nano high-power semiconductor laser module and packaging method thereof |
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| CN2011104396502A CN102522695A (en) | 2011-12-23 | 2011-12-23 | Nano silver soldering paste packaged 60-watt 808-nano high-power semiconductor laser module and packaging method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594395A (en) * | 2013-10-24 | 2014-02-19 | 天津大学 | Pressurization assistant sintering module and method for bonding nano-silver soldering paste to large-area chip |
| CN107810582A (en) * | 2015-05-19 | 2018-03-16 | Ii-Vi激光股份有限公司 | The controlled laser diode module of a kind of low thermal resistance, stress |
| CN108565673A (en) * | 2018-04-01 | 2018-09-21 | 额尔德尼毕利格 | Bar items for semiconductor laser are integrated |
| CN109994373A (en) * | 2019-04-12 | 2019-07-09 | 中国电子科技集团公司第三十八研究所 | A kind of dress bare chip connection of micro-group and repair method |
| CN111628405A (en) * | 2019-02-28 | 2020-09-04 | 潍坊华光光电子有限公司 | High-power conduction cooling packaging structure bar laser sintering fixture and sintering method thereof |
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| CN1870310A (en) * | 2006-06-08 | 2006-11-29 | 天津大学 | Method for low temp sintering, packaging and connecting high power LED by nano-silver soldering paste |
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2011
- 2011-12-23 CN CN2011104396502A patent/CN102522695A/en active Pending
Patent Citations (1)
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| CN1870310A (en) * | 2006-06-08 | 2006-11-29 | 天津大学 | Method for low temp sintering, packaging and connecting high power LED by nano-silver soldering paste |
Non-Patent Citations (3)
| Title |
|---|
| TAO WANG ET AL.: "Low-Temperature Sintering with Nano-Silver Paste in Die-Attached Interconnection", 《JOURNAL OF ELECTRONIC MATERIALS》, vol. 36, no. 10, 11 September 2007 (2007-09-11) * |
| YI YAN ET AL.: "Die bonding of single emitter semiconductor laser with nano-scale silver paste", 《2011 12TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY AND HIGH DENSITY PACKAGING》, 11 August 2011 (2011-08-11) * |
| 齐昆 等: "大功率LED封装界面材料的热分析", 《电子与封装》, vol. 7, no. 6, 30 June 2007 (2007-06-30) * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594395A (en) * | 2013-10-24 | 2014-02-19 | 天津大学 | Pressurization assistant sintering module and method for bonding nano-silver soldering paste to large-area chip |
| CN107810582A (en) * | 2015-05-19 | 2018-03-16 | Ii-Vi激光股份有限公司 | The controlled laser diode module of a kind of low thermal resistance, stress |
| CN108565673A (en) * | 2018-04-01 | 2018-09-21 | 额尔德尼毕利格 | Bar items for semiconductor laser are integrated |
| CN111628405A (en) * | 2019-02-28 | 2020-09-04 | 潍坊华光光电子有限公司 | High-power conduction cooling packaging structure bar laser sintering fixture and sintering method thereof |
| CN111628405B (en) * | 2019-02-28 | 2022-04-01 | 潍坊华光光电子有限公司 | High-power conduction cooling packaging structure bar laser sintering fixture and sintering method thereof |
| CN109994373A (en) * | 2019-04-12 | 2019-07-09 | 中国电子科技集团公司第三十八研究所 | A kind of dress bare chip connection of micro-group and repair method |
| CN109994373B (en) * | 2019-04-12 | 2021-06-22 | 中国电子科技集团公司第三十八研究所 | Micro-assembly bare chip connecting and repairing method |
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Application publication date: 20120627 |