CN102881806B - Surface mounted device light emitting diode (SMD LED) unit and packaging method thereof - Google Patents
Surface mounted device light emitting diode (SMD LED) unit and packaging method thereof Download PDFInfo
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- CN102881806B CN102881806B CN201210314411.9A CN201210314411A CN102881806B CN 102881806 B CN102881806 B CN 102881806B CN 201210314411 A CN201210314411 A CN 201210314411A CN 102881806 B CN102881806 B CN 102881806B
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- electrode
- led
- copper
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- panel frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
Abstract
The invention relates to a surface mounted device light emitting diode (SMD LED) unit and a packaging method thereof. The packaging method comprises the following steps of: manufacturing a substrate frame, wherein the substrate frame comprises a substrate, a circuit formed on the substrate, and an electrode connected with the circuit; manufacturing an LED unit screen or a multi-element screen; uniformly coating a tin solder on the electrode in the substrate frame through the screen by employing screen printing; orientating the LED chip electrode to the substrate frame, and mounting the LED chip electrode on the substrate frame, wherein the electrode of the LED chip and the electrode in the substrate frame are correspondingly mounted; feeding the substrate frame mounted with the chip back to a reflow oven for reflow soldering, and obtaining a full-page LED; performing unit stripping on the full-page LED, and obtaining an SMD LED unit. The packaging method is simple in process and low in cost, and a ceramic composite copper substrate is used, so that the radiating effect is good.
Description
Technical field
The present invention relates to a kind of light emitting semiconductor device and method for packing thereof, specifically a kind of SMD LED and method for packing thereof, belong to technical field of semiconductor luminescence.
Background technology
The English full name of LED(is Light Emitting Diode, mean Light-Emitting Diode) be a kind of solid-state semiconductor device, it utilizes solid semiconductor chip as luminescent material, releases energy and cause photo emissions by charge carrier generation compound, is directly luminous energy electric energy conversion.LED has that brightness is high, volume is little, efficiency is high and the advantage such as the life-span is long, is widely used in fields such as traffic instruction, outdoor total colouring.The English full name of SMD LED(is Surface Mounted Devices Light Emitting Diode, mean paster type light emitting type or surface patch diode or surface mount diode), there is the features such as lighting angle is large, efficiency is high, small product size is little, reliability is high, easily be automated, become the focus of research gradually.
During LED work, the temperature of PN junction rises, and the heat that PN junction produces does not distribute not go out, and not only can affect luminous efficiency, also can have a strong impact on reliability and the life-span of product, so select suitable heat-radiating substrate to seem particularly important.The suitable material doing LED heat radiation substrate has metal substrate (iron, copper, aluminium etc.), metallized ceramic base plate, aluminium base insulated substrate, metal-base composites etc.The metal substrate thermal conductivity such as copper aluminium are better, and cost is low, but coefficient of linear expansion is comparatively large, easily cause LED chip to encapsulate thermal cycle loss; The insulating medium layer of aluminium base insulated substrate is organic insulator, and heat conduction rate variance, has a strong impact on chip cooling; Metal-base composites is difficult to mass production, and cost is too high.And the reliability of ceramic substrate is high, life-span length, good heat conductivity, low price, become the preferred material of heat-radiating substrate.
Chinese patent CN202221759U discloses a kind of LED light source device with high thermal conductive substrate, comprise high thermal conductive substrate 1 and LED chip 2, wherein the welding procedure step of substrate manufacture, LED chip and substrate is: the making of (1) high thermal conductive substrate, described high thermal conductive substrate comprises PI resin mold 11, metal-based layer 12, insulating medium layer 13 and electrodeposited copper foil layer 14 from top to bottom, mixes by the silicon class medium filler of heat conduction in described insulating medium layer 13; (2) on described electrodeposited copper foil layer 14, circuit is made; (3) on described electrodeposited copper foil layer, make bump electrode 3, described bump electrode 3 is little gold goal, ensure balling-up size, and shape is consistent, and described bump electrode 3 is electrically connected with described electrolytic copper foil line layout; (4) LED chip is fitted on bump electrode; (5) the welding of LED chip and substrate, produces high-intensity magnetic field by electromagnetic equipment, makes bump electrode 3 and LED chip Direct Bonding.
This device adopts the method for flip chip bonding to be connected on high thermal conductive substrate by LED chip, ensure that more than 5 transparent surfaces, effectively raises light efficiency.But in this Flip Chip Bond Technique, step (3) needs to make multiple bump electrode on electrodeposited copper foil layer, but also need to ensure that the balling-up size of bump electrode, form trait are consistent, complex process, required precision is high.In addition, the connection of step (5) LED chip and bump electrode (little gold goal) is the high-intensity magnetic field generation molecular linkage produced by electromagnetic equipment, and equipment investment is large, and production cost is high.
As can be seen from step (1), the high thermal conductive substrate that this device adopts adopts metal as base material, and coefficient of linear expansion is large, easily causes LED chip to encapsulate thermal cycle loss.And insulating medium layer is added between metal-based layer and electrodeposited copper foil layer, this insulating medium layer adopts the epoxy resin, PI resin or the PPO resin that are added with the modification of thermal conductive silicon class medium filler, although employing heat filling, but material of main part is still organic insulator, poor thermal conductivity, and the attachment affecting Copper Foil.In addition, this high thermal conductive substrate contains four-layer structure, complex structure, and technique is lengthy and tedious.
Summary of the invention
Technical problem to be solved by this invention is the technical problem of LED Flip Chip Bond Technique complexity in prior art, thus provides the SMD LED of the simple SMD LED encapsulation method of a kind of technique and acquisition thereof.
For solving the problems of the technologies described above, the present invention is achieved by the following technical solutions:
A kind of SMD LED encapsulation method, comprises following process steps:
(1) make base panel frame, described base panel frame comprises substrate and the circuit be molded on substrate and the electrode be connected with circuit;
(2) LED unit web plate or polynary web plate is made;
(3) silk screen printing is adopted to be coated in by tin solder on the electrode in described base panel frame uniformly by described web plate made in step (2);
(4) by LED chip electrode surface towards described base panel frame, be mounted in described base panel frame, the electrode pair in the electrode of described LED chip and described base panel frame should mount;
(5) gained in step (4) is pasted with in the described base panel frame feeding reflow soldering of chip and carries out Reflow Soldering, obtain justifying LED;
(6) described justifying LED is carried out unit stripping, obtain SMD LED unit.
The composition of described tin solder is Sn:Ag:Cu:Au=95 ~ 97:0.5 ~ 2:0.5 ~ 2:0.5 ~ 2.
The composition of described tin solder is Sn:Ag:Cu:Au=97:1:1:1.
The method making base panel frame in described step (1) is as follows: first substrate and Copper Foil compound are obtained complex copper substrate, and then in the layers of copper of described complex copper substrate, etching forms circuit and copper electrode, finally fills dielectric.
Described substrate is AlN ceramic material, and layers of copper is electrolytic copper foil or rolled copper foil, and copper layer thickness is 20 ~ 100 microns.
Described dielectric is polyphthalamide.
After step (6), further comprising the steps of:
(7) the described LED unit separated is carried out color-division;
(8) a point lustful LED unit is carried out adhesive tape packaging respectively by braider.
Each zone temperatures of described Reflow Soldering is followed successively by 100 DEG C, 150 DEG C, 185 DEG C, 220 DEG C, 180 DEG C, 140 DEG C, 100 DEG C, and the time that each section stops is 15-25s, 15-28s, 15-30s, 25-30s, 25-30s, 25-30s, 15-25s respectively.
Described each section time of staying is 20s, 25s, 28s, 29s, 28s, 25s, 20s respectively.
SMD LED unit prepared by a kind of SMD LED encapsulation method.
Technique scheme of the present invention has the following advantages compared to existing technology:
(1) adopt silk screen printing and reflow soldering process in method for packing of the present invention, make simple, cost is low.
(2) heat-radiating substrate of the present invention is DBC(Direct Bondes Copper) Ceramic Composite copper base, there is between layers of copper and ceramic layer the congruent melting interface of copper aluminate, adhesive strength is high, perfect heat-dissipating; Production technology is simple, cost is low, is applicable to large-scale production; Thermal coefficient of expansion and the LED chip of ceramic material are close, and thermal shock resistance is strong.
(3) reserve copper electrode in the etching circuit in the present invention on described DBC Ceramic Composite copper base, between described copper electrode, fill dielectric.While formation insulating barrier, reserve electrode, decrease this processing step of electrode fabrication, cost is low, and the electrode in insulating medium layer plays again the effect of heat-conducting medium, good heat dissipation effect.
(4) dielectric described in the present invention is polyphthalamide (PPA), and this material can the continuous high temperature of resistance to 200 DEG C, and can also ensure good dimensional stability under the high temperature conditions, thus improves the useful life of LED.And this layer of rough surface, can be reflected away the light that LED chip lower surface irradiates out by diffuse reflection, further enhancing light efficiency.
(5) the present invention adopts screen-printing deposition solder, and precision is high, and technique is simple.
(6) the present invention adopts lead-free solder, environmental protection, meets electronics and IT products prevention and cure of pollution standard and the European Union RoHS standard of China.
(7) temperature settings of Reflow Soldering described in the present invention is lower, when ensureing weld strength, decreases the impact of high temperature on LED chip.
(8) in the present invention, color-division and adhesive tape packaging process are all pour LED into disk battle array, and undertaken by Machine automated, automaticity is high.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below in conjunction with accompanying drawing, the present invention is further detailed explanation, wherein,
Fig. 1 is the structural representation of the LED light source device in documents with high thermal conductive substrate;
Fig. 2 is the die bond sectional view of SMD LED unit of the present invention;
Fig. 3 is the structural representation of SMD LED-baseplate framework of the present invention;
Fig. 4 is the complex copper of AlN ceramic described in the present invention Substrate manufacture flow chart.
In Fig. 1, Reference numeral is expressed as: 1-heat-conducting substrate, 11-PI resin, 12-metal-based layer, 13-insulating medium layer, 14-electrodeposited copper foil layer, 2-LED chip, 21-LED working face, 3-bump electrode, 4-lens protective cover;
In Fig. 2, Reference numeral is expressed as: 1-AlN Ceramic Composite copper base, 11-first copper electrode; 12-second copper electrode; 2-tin solder layer, 3-chip, 31-chip positive pole, 32-chip negative pole.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, implementation method of the present invention is described in further detail, for SMD LED3528, as in Figure 2-4, comprise: aluminium nitride (AlN) Ceramic Composite copper base 1, tin solder layer 2, chip 3, wherein, AlN ceramic complex copper substrate 1 is composited by AlN ceramic layer and copper foil layer, the electrode that described copper foil layer forms circuit through etching and is made up of the first copper electrode 11 and the second copper electrode 12, is filled with insulating medium layer between described electrode; Described chip 3 comprises chip positive pole 31 and chip negative pole 32, and described first copper electrode 11 is for connecting chip positive pole 31, and described second copper electrode 12 is for connecting chip negative pole 32.
The method for packing of SMD LED3528 comprises following process steps:
(1) 3528 base panel frame are made, by rolled copper foil or electrolytic copper foil on the single-sided lamination of the AlN ceramic of high-insulativity, copper thickness is 20 ~ 100 microns, send into high temperature furnace, via 1065-1085 DEG C of heating temperatures, make copper because of metal high-temperature oxydation, diffusion and AlN ceramic produce the congruent melting interface of copper aluminate, copper and ceramic substrate are bonded, forms Ceramic Composite copper base; And then according to 3528 line design, in layers of copper, prepare circuit and copper electrode in the mode etched.There is between layers of copper and ceramic layer the congruent melting interface of copper aluminate, adhesive strength be high, perfect heat-dissipating; Production technology is simple, cost is low, is applicable to large-scale production; Thermal coefficient of expansion and the LED chip of ceramic material are close, and thermal shock resistance is strong.
(2) in above-mentioned layers of copper circuit, reserve copper electrode, described dielectric polyphthalamide is filled between copper electrode, form SMD LED-baseplate framework as shown in Figure 3, it comprises ten row 18 and arranges totally one hundred eight ten base board units, each base board unit is used for and a chips welding, and what in figure, last column row third from the bottom marked is a base board unit.This material can the continuous high temperature of resistance to 200 DEG C, and can also ensure good dimensional stability under the high temperature conditions, thus improves the useful life of LED.And this layer of rough surface, can be reflected away the light that LED chip lower surface irradiates out by diffuse reflection, further enhancing light efficiency.
(3) 3528LED unit web plate or polynary web plate is made; By screen process press and described web plate tin solder is coated in uniformly on the electrode in described base panel frame.Adopt screen-printing deposition solder, precision is high, and technique is simple.Composition as the described tin solder of one embodiment of the invention is Sn:Ag:Cu:Au=97:1:1:1; Adopt lead-free solder, environmental protection, meets electronics and IT products prevention and cure of pollution standard and the European Union RoHS standard of China.
(4) LED chip electrode surface is mounted on down in described 3528 base panel frame, the positive and negative electrode of described LED chip respectively with in described base panel frame described in the first copper electrode and the second copper electrode is corresponding mounts.
(5) gained is pasted with in the described base panel frame feeding reflow soldering of chip and carries out Reflow Soldering, obtains justifying 3528LED; Each zone temperatures of described Reflow Soldering is followed successively by 100 DEG C, 150 DEG C, 185 DEG C, 220 DEG C, 180 DEG C, 140 DEG C, 100 DEG C; Each section time of staying is 20s, 25s, 28s, 29s, 28s, 25s, 20s respectively.。Described Reflow Soldering temperature settings is lower, when ensureing weld strength, decreases the impact of high temperature on LED chip.
(6) described justifying 3528LED is carried out unit stripping, obtain Unit 3528.
(7) pour the described Unit 3528 separated into disk battle array, carry out color-division by automaton, namely by light splitting machine, the voltage of LED, luminous flux, leakage current, wavelength, chromaticity coordinates etc. are distinguished, puts in different hoppers.
(8) pour point lustful Unit 3528 into disk battle array, carry out adhesive tape packaging respectively by braider, be assembled on carrier band by LED unit, then adhesive tape encapsulation of fitting; Carrier band after encapsulation dresses up spool, then packs.
As other embodiments of the present invention, the composition of described tin solder can be the arbitrary ratio in Sn:Ag:Cu:Au=95 ~ 97:0.5 ~ 2:0.5 ~ 2:0.5 ~ 2 scope, all can realize object of the present invention, belong to protection scope of the present invention.
As other embodiments of the present invention; the time that each section of described Reflow Soldering stops can be the arbitrary time in 15-25s, 15-28s, 15-30s, 25-30s, 25-30s, 25-30s, 15-25s each time period respectively; all can realize object of the present invention, belong to protection scope of the present invention.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among the protection range of the invention.
Claims (8)
1. a SMD LED encapsulation method, is characterized in that, comprises following process steps:
(1) make base panel frame, described base panel frame comprises substrate and the circuit be molded on substrate and the electrode be connected with circuit;
The method making described base panel frame is as follows: first by the baseplate-laminating of layers of copper and AlN ceramic material, obtain complex copper substrate via 1065 DEG C ~ 1085 DEG C heating, described layers of copper is rolled copper foil;
Then in described complex copper substrate layers of copper, etching forms circuit and copper electrode, finally between described copper electrode, fills dielectric;
(2) LED unit web plate or polynary web plate is made;
(3) adopt silk screen printing to be coated in by tin solder on the electrode in described base panel frame uniformly by described web plate made in step (2), the composition of described tin solder is Sn:Ag:Cu:Au=95 ~ 97:0.5 ~ 2:0.5 ~ 2:0.5 ~ 2;
(4) by LED chip electrode surface towards described base panel frame, be mounted in described base panel frame, the electrode pair in the electrode of described LED chip and described base panel frame should mount;
(5) gained in step (4) is pasted with in the described base panel frame feeding reflow soldering of chip and carries out Reflow Soldering, obtain justifying LED;
(6) described justifying LED is carried out unit stripping, obtain SMD LED unit.
2. a kind of SMD LED encapsulation method according to claim 1, is characterized in that, the composition of described tin solder is Sn:Ag:Cu:Au=97:1:1:1.
3. a kind of SMD LED encapsulation method according to claim 1, is characterized in that, copper layer thickness is 20 ~ 100 microns.
4. a kind of SMD LED encapsulation method according to claim 3, is characterized in that, described dielectric is polyphthalamide.
5., according to the arbitrary described a kind of SMD LED encapsulation method of claim 1-4, it is characterized in that, after step (6), further comprising the steps of:
(7) the described LED unit separated is carried out color-division;
(8) a point lustful LED unit is carried out adhesive tape packaging respectively by braider.
6. a kind of SMD LED encapsulation method according to claim 5, it is characterized in that, each zone temperatures of described Reflow Soldering is followed successively by 100 DEG C, 150 DEG C, 185 DEG C, 220 DEG C, 180 DEG C, 140 DEG C, 100 DEG C, and the time that each section stops is 15-25s, 15-28s, 15-30s, 25-30s, 25-30s, 25-30s, 15-25s respectively.
7. a kind of SMD LED encapsulation method according to claim 6, is characterized in that, each section time of staying is 20s, 25s, 28s, 29s, 28s, 25s, 20s respectively.
8. a described SMD LED unit a kind of SMD LED encapsulation method prepared by arbitrary just like claim 1-7.
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104078550A (en) * | 2013-03-27 | 2014-10-01 | 深圳市邦贝尔电子有限公司 | LED packaging method for die bonding by screen printing process |
| CN103281874B (en) * | 2013-05-08 | 2015-11-18 | 无锡江南计算技术研究所 | A kind of mounted with electronic components welding method |
| CN103456875A (en) * | 2013-09-03 | 2013-12-18 | 南京华鼎电子有限公司 | Method for fixing LED inversed wafers with screen printing technique |
| CN103824906B (en) * | 2014-03-04 | 2017-08-29 | 山东晶泰星光电科技有限公司 | A kind of LED encapsulation method and LED matrix |
| CN104091878B (en) * | 2014-06-19 | 2017-02-15 | 东莞市万丰纳米材料有限公司 | Package-free LED light source module manufacturing method |
| CN104613427A (en) * | 2015-01-19 | 2015-05-13 | 江苏翠钻照明有限公司 | SMD LED component and manufacturing method thereof |
| CN107305922B (en) * | 2016-04-18 | 2019-12-13 | 浙江亿米光电科技有限公司 | preparation method of integrated 360-degree three-dimensional light-emitting source with power supply |
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| KR20120091839A (en) * | 2011-02-10 | 2012-08-20 | 삼성전자주식회사 | Flip chip light emitting device package and manufaturing method thereof |
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| CN101779304A (en) * | 2007-07-25 | 2010-07-14 | 京瓷株式会社 | Thermoelectric element, thermoelectric module, and method for manufacturing thermoelectric element |
| CN201556637U (en) * | 2009-04-16 | 2010-08-18 | 张成邦 | Big power LED packaging ceramic base plate |
| CN101958389A (en) * | 2010-07-30 | 2011-01-26 | 晶科电子（广州）有限公司 | LED surface mounting structure for silicon substrate integrated with functional circuits and packaging method thereof |
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