CN101532612A - Method for manufacturing integrated LED chip light source - Google Patents
Method for manufacturing integrated LED chip light source Download PDFInfo
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- CN101532612A CN101532612A CN200910037729A CN200910037729A CN101532612A CN 101532612 A CN101532612 A CN 101532612A CN 200910037729 A CN200910037729 A CN 200910037729A CN 200910037729 A CN200910037729 A CN 200910037729A CN 101532612 A CN101532612 A CN 101532612A
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Abstract
The invention discloses a method for manufacturing an integrated LED chip light source, which has low cost, simple process and high production efficiency. Light sources manufactured by the method have good light source radiating effect. The method comprises the following steps: (a) forming a circuit on an aluminum substrate, namely forming a preset printed circuit on the aluminum substrate with a heat-conducting insulating layer according to the series-parallel connection relation of LED bare chips, wherein except welding points, chips and routing positions on the printed circuit, conducting wires of the other parts are covered with an anti-welding layer; (b) packaging the LED bare chips, namely packaging a plurality of the LED bare chips normally or inversely and connect the same to the printed circuit of the aluminum substrate; and (c) forming a protection layer, namely covering silica gel or resin on the LED bare chips and corresponding peripheral positions thereof as protection layers which cover the LED bare chips and packaging metal wires or solder balls. The method can be widely applied in the field of LED light sources.
Description
Technical field
The present invention relates to a kind of manufacture method of integrated LED chip light source.
Background technology
The formal dress chip technology is traditional microelectronic packaging technology, and its technology maturation has wide range of applications.Present most LED is forward LED, no matter the substrate of LED bare chip is GaAs or carborundum, outside substrate, all be coated with the layer of metal layer as N type electrode, while is the usefulness of double as heat radiation also, its formal dress on a support that has a reflector as negative electrode, P type epitaxial loayer above it is welded on the anode tap by metal wire again, because each end of the top and substrate surface of this kind bare chip as electrode, be called " single electrode chip " so practise, at present, this single electrode chip of the more employing of gold-tinted and red-light LED.Except that above-mentioned single electrode LED bare chip (the chip positive and negative respectively has an electrode), the substrate of the LED bare chip that has in recent years is insulating materials such as aluminium oxide, so just (P type) and negative (N type) electrode all need be arranged at the surface of bare chip, that is so-called " bipolar electrode chip ", at present, this bipolar electrode chip of the more employing of blue light and green light LED.Flip chip technology (fct) is one of current state-of-the-art microelectronic packaging technology, and it is a kind of chip interconnection technique, is again a kind of desirable die bonding technology, and it has risen to a new height with the circuit packing density.In all surface mounting technique, flip-chip can reach minimum, the thinnest encapsulation, and along with further dwindling of electronic product volume, the application of flip-chip will be more and more widely.The packing forms that the LED bare chip is tipped upside down on the substrate is called flip LED.
A plurality of LED bare chips are integrated on the wiring board are called integrated chip.No matter be that single electrode LED bare chip, bipolar electrode LED bare chip or flip LED bare chip all can be applicable on the LED integrated chip.Commonly used to aluminium base in the LED integrated chip, as substrate, the coated with thermally conductive insulating barrier covers Copper Foil to aluminium base again on the heat conductive insulating layer in the above by the metal aluminum or aluminum alloy.Because its heat conductive insulating layer can high pressure resistant (〉 1500V) and the substrate thermal diffusivity preferable, so be widely used in the LED field.Its application mode is according to the manufacture of conventional monolayers printed substrate Copper Foil to be formed circuit with printing and etching mode on aluminium base, welding resisting layer is covered on the aluminium base again, only exposes the Copper Foil that needs the welding position.Existing illuminating LED list chips adopts the bigger power-type LED chip of area mostly, and its cost is higher, because chip area is bigger, thermal source is concentrated, so radiating effect is bad; Simultaneously, this led chip is difficult realizes that the multicore sheet is integrated; When adopting this chip manufacturing light source, need earlier single great power LED bare chip is encapsulated in the paster encapsulation of band metal substrate, and then the SMD chip that several are packaged concerns by connection in series-parallel and is connected on the aluminium base on charged road.Adopt at present integrated LED chip to make the method for light source in addition, it needs earlier the plurality of LEDs bare chip to be connected by connection in series-parallel to be encapsulated in the paster encapsulation of being with metal, and then the SMD integrated chip that several are packaged is connected on the aluminium base on charged road by the connection in series-parallel relation.The light source manufacture method of this integrated LED chip needs at first the LED bare chip once to be encapsulated, and carries out the secondary encapsulation again on the aluminium base on charged road, so its complex process, and cost is higher, and production efficiency is lower.
Summary of the invention
Technical problem to be solved by this invention is to overcome the deficiencies in the prior art, and the manufacture method of the integrated LED chip light source that a kind of cost is low, technology is simple, production efficiency is high is provided, and the light source heat radiation that adopts this method to make is effective.
The technical scheme that manufacture method adopted of integrated LED chip light source of the present invention is: may further comprise the steps:
(a) forming circuit on the aluminium base: having that the connection in series-parallel annexation according to the LED bare chip forms predefined printed circuit on the aluminium base of heat conductive insulating layer, printed circuit is coated with welding resisting layer on the remainder lead except that solder joint, chip and routing position;
(b) LED bare chip encapsulation: several LED bare chip formal dress or upside-down mounting are connected on the described printed circuit of aluminium base;
(c) form protective layer: on described LED bare chip and relevant position on every side cover silica gel or resin, through hot setting, form protective layer, described protective layer covers described LED bare chip and the metal wire that is used to encapsulate or soldered ball.
Further, described LED bare chip is applied in the white light LEDs, and is further comprising the steps of between described step (b) and described step (c):
(b0) form phosphor powder layer: on the blue-ray LED bare chip that is encapsulated on the described printed circuit, cover the fluorescent material that modulates in advance, pass through hot setting again, form phosphor powder layer.
Described LED bare chip is divided into some groups, and each is organized between the inner described LED bare chip and between some groups of described LED bare chips and all is connected by described printed circuit, and draws anode contact and cathode contact on described printed circuit.
Mutual serial or parallel connection or connection in series-parallel are connected between the described LED bare chip of each group inside.
Mutual serial or parallel connection or connection in series-parallel are connected between the some groups of described LED bare chips.
Described LED bare chip is a single electrode chip, the substrate of described LED bare chip is GaAs or silicon carbide substrates, in the described step (b), described substrate is bonded on the described printed circuit of described aluminium base with silver slurry or tin, and an electrode contact of described LED bare chip is welded on by metal wire and carries out the formal dress encapsulation on the described printed circuit.
Described LED bare chip is the bipolar electrode chip, the substrate of described LED bare chip is an alumina substrate, in the described step (b), described substrate is bonded on the described printed circuit of described aluminium base with ultrasonic bond or with silver slurry or tin, and two electrode contacts of described LED bare chip are welded on by two metal wires respectively and carry out the formal dress encapsulation on the described printed circuit.
Described LED bare chip is a flip-chip, in the described step (b), plants soldered ball on described printed circuit, by the method for ultrasonic bond flip-chip packaged is carried out in the upside-down mounting of described LED bare chip on described soldered ball again, and described soldered ball is gold goal bolt or copper ball bolt or tin ball.
The invention has the beneficial effects as follows: because the present invention directly is connected LED bare chip formal dress or upside-down mounting on the described printed circuit of band aluminium base after forming circuit on the aluminium base, only just become an independently light source by once encapsulating, the characteristics that need the secondary encapsulation with respect to prior art, light source after the present invention once encapsulates directly is connected to drive circuit just can luminous work, simplified processing step, saved encapsulating material, saved cost, make production efficiency significantly improve, the present invention is directly transferred to the heat of the luminous generation of LED bare chip on the described printed circuit and by described aluminium base by described heat conductive insulating layer and is dispersed into the external world more in addition, heat transfer path also shortens dramatically compared to existing technology, the heat conduction of velocity is faster, the heat conduction and heat radiation better effects if, prolonged the service life of LED bare chip, so cost of the present invention is low, technology is simple, the production efficiency height, the light source heat radiation that adopts this method to make is effective;
Because the present invention is divided into some groups with described LED bare chip, reach between some groups of described LED bare chips between the described LED bare chip of each group inside and all be connected by described printed circuit, and on described printed circuit, draw anode contact and cathode contact, mutual serial or parallel connection or connection in series-parallel are connected between the described LED bare chip of each group inside, mutual serial or parallel connection or connection in series-parallel are connected between the some groups of described LED bare chips, therefore each described LED bare chip can produce serial or parallel connection or connection in series-parallel multiple circuit connecting mode such as be connected each other, use and adjust freedom, can be widely used in handing over, direct current and height, in the light fixture of low pressure and different capacity, so employing manufacture method of the present invention can be implemented in the many kinds of connected modes of LED on the aluminium base, applied range.
Description of drawings
Fig. 1 is the Facad structure schematic diagram of light source of the chip of embodiment of the invention integrated LED;
Fig. 2 is the local structure for amplifying schematic diagram in I shown in Figure 1 place;
Fig. 3 is B-B section structure schematic diagram shown in Figure 2.
The specific embodiment
As Fig. 1～shown in Figure 3, the light source of the integrated LED chip of present embodiment is one to be applied to the light source of the bulkhead lamp capable of 220V alternating current, comprise LED bare chip 1, aluminium base 2, described LED bare chip 1 comprises substrate 10 and N type epitaxial loayer 11, P type epitaxial loayer 12, the front of described aluminium base 2 has heat conductive insulating layer 3, on the described heat conductive insulating layer 3 printed circuit 6 is arranged, and described LED bare chip 1 is the bipolar electrode chip, described substrate 10 is aluminium oxide (sapphire, Al
2O
3) substrate, certain described substrate 10 also can be the substrate of GaAs (GaAs) or carborundum other materials such as (SiC), described P type epitaxial loayer 12, described N type epitaxial loayer 11 is respectively by two metal wires 43,45 are welded on two adjacent described printed circuits 6 to realize the formal dress of led chip, described LED bare chip 1 is divided into 8 groups, every group comprises 25 described LED bare chips 1, all be connected in series between 25 described LED bare chips 1 of every group of inside, can certainly be connected according to mutual parallel connection or connection in series-parallel between the actual instructions for use described LED bare chip 1 that each group is inner, 8 groups of described LED bare chips 1 are further divided into two big groups, each big group respectively comprises 4 groups of described LED bare chips 1, series connection mutually between 4 groups of described LED bare chips 1, two big group is connected in parallel again, certainly respectively organize between the described LED bare chip 1 also fully mutually serial or parallel connection or adopt other connection in series-parallel compound modes, all by described printed circuit 6 built-up circuit that is connected, described printed circuit 6 is drawn anode contact 60 and cathode contact 61 between the inner described LED bare chip 1 of each group and between 8 groups of described LED bare chips 1.
The manufacture method of the integrated LED chip light source of present embodiment may further comprise the steps:
(a) forming circuit on the aluminium base: having that the connection in series-parallel annexation according to LED bare chip 1 forms predefined printed circuit 6 on the aluminium base 2 of heat conductive insulating layer 3, printed circuit 6 is coated with welding resisting layer (welding resisting layer is not shown in the drawings) on the remainder lead except that solder joint, chip and routing position;
(b) LED bare chip encapsulation: be bonded on the described printed circuit 6 of described aluminium base 2 with the described substrate 10 usefulness ultrasonic bonds of described LED bare chip 1 or with silver slurry or tin, two electrode contacts of described LED bare chip 1 are welded on by two metal wires 43,45 respectively and carry out the formal dress encapsulation on the described printed circuit 6;
(b0) form phosphor powder layer: use as white light LEDs, cover the fluorescent material that modulates in advance on the blue-ray LED bare chip 1 that is encapsulated on the described printed circuit 6, its thickness is 0.2～0.5mm, passes through hot setting again, forms phosphor powder layer 7.
(c) form protective layer: on the described phosphor powder layer 7 on described LED bare chip 1 and relevant position on every side cover silica gel or resin; through hot setting; form protective layer 5; described protective layer 5 covers described LED bare chip 1 and the metal wire that is used to encapsulate 43,45; to prevent that metal wire from fractureing, the influence that can protect described LED bare chip 1 not changed by external environment simultaneously.
Among the present invention, the quantity of described LED bare chip 1 is not limited to described in the embodiment, the quantity of the described LED bare chip 1 of the number of packet of described LED bare chip 1 and every group of inside also is not limited to described in the embodiment, described LED bare chip 1 also can be single electrode chip or flip-chip, therefore described LED bare chip 1 both can formal dress also can upside-down mounting on each described printed circuit 6, making different friendships, direct current and height, in the light fixture of low pressure and different capacity (such as 12V direct current big-power solar street lamp, 220V alternating current large-power street lamp, light fixtures such as 220V AC LED fluorescent tube) can be provided with flexibly, therefore adopt manufacture method of the present invention can be implemented in many kinds of connected modes of LED on the aluminium base, applied range only illustrates among the embodiment.
When the LED bare chip is single electrode chip, the substrate 10 of LED bare chip 1 is GaAs or silicon carbide substrates, in described step (b), described substrate 10 usefulness silver slurry or tin are bonded on the described printed circuit 6 of described aluminium base 2, and an electrode contact of described LED bare chip 1 is welded on by metal wire and carries out the formal dress encapsulation on the described printed circuit 6.
When the LED bare chip is flip-chip, in described step (b), plant soldered ball on described printed circuit 6, by the method for ultrasonic bond flip-chip packaged is carried out in described LED bare chip 1 upside-down mounting on described soldered ball again, described soldered ball is gold goal bolt or copper ball bolt or tin ball.
The present invention has broken through the intrinsic thoughtcast of this area, after forming circuit on the aluminium base, directly LED bare chip formal dress or upside-down mounting are connected on the printed circuit of aluminium base, only just become an independently light source by once encapsulating, the characteristics that need the secondary encapsulation with respect to prior art, light source after the present invention once encapsulates directly is connected to drive circuit just can luminous work, simplified processing step, saved encapsulating material, saved cost, make production efficiency significantly improve, the present invention is directly transferred to the heat of the luminous generation of LED bare chip on the printed circuit and by aluminium base by the heat conductive insulating layer and is dispersed into the external world more in addition, heat transfer path also shortens dramatically compared to existing technology, the heat conduction of velocity is faster, the heat conduction and heat radiation better effects if, prolonged the service life of LED bare chip, so cost of the present invention is low, technology is simple, the production efficiency height, the light source heat radiation that adopts this method to make is effective.In addition, each described LED bare chip of the present invention can produce serial or parallel connection or connection in series-parallel multiple circuit connecting mode such as be connected each other, use and adjust freedom, can be widely used in the light fixture of AC and DC and high and low pressure and different capacity, therefore adopt manufacture method of the present invention can be implemented in many kinds of connected modes of LED on the aluminium base, can be widely used in the light fixtures such as street lamp, bulkhead lamp capable, LED fluorescent tube, general lighting lamp.
The present invention can be widely used in the led light source field.
Claims (8)
1, a kind of manufacture method of integrated LED chip light source is characterized in that: may further comprise the steps:
(a) forming circuit on the aluminium base: having that the connection in series-parallel annexation according to the LED bare chip forms predefined printed circuit on the aluminium base of heat conductive insulating layer, printed circuit is coated with welding resisting layer on the remainder lead except that solder joint, chip and routing position;
(b) LED bare chip encapsulation: several LED bare chip formal dress or upside-down mounting are connected on the described printed circuit of aluminium base;
(c) form protective layer: on described LED bare chip and relevant position on every side cover silica gel or resin, through hot setting, form protective layer, described protective layer covers described LED bare chip and the metal wire that is used to encapsulate or soldered ball.
2, the manufacture method of integrated LED chip light source according to claim 1 is characterized in that: described LED bare chip is applied in the white light LEDs, and is further comprising the steps of between described step (b) and described step (c):
(b0) form phosphor powder layer: on the blue-ray LED bare chip that is encapsulated on the described printed circuit, cover the fluorescent material that modulates in advance, pass through hot setting again, form phosphor powder layer.
3, the manufacture method of integrated LED chip light source according to claim 1 and 2, it is characterized in that: described LED bare chip is divided into some groups, each is organized between the inner described LED bare chip and between some groups of described LED bare chips and all is connected by described printed circuit, and draws anode contact and cathode contact on described printed circuit.
4, the manufacture method of integrated LED chip light source according to claim 3 is characterized in that: mutual serial or parallel connection or connection in series-parallel are connected between the described LED bare chip of each group inside.
5, the manufacture method of integrated LED chip light source according to claim 3 is characterized in that: mutual serial or parallel connection or connection in series-parallel are connected between the some groups of described LED bare chips.
6, the manufacture method of integrated LED chip light source according to claim 1 and 2, it is characterized in that: described LED bare chip is a single electrode chip, the substrate of described LED bare chip is GaAs or silicon carbide substrates, in the described step (b), described substrate is bonded on the described printed circuit of described aluminium base with silver slurry or tin, and an electrode contact of described LED bare chip is welded on by metal wire and carries out the formal dress encapsulation on the described printed circuit.
7, the manufacture method of integrated LED chip light source according to claim 1 and 2, it is characterized in that: described LED bare chip is the bipolar electrode chip, the substrate of described LED bare chip is an alumina substrate, in the described step (b), described substrate is bonded on the described printed circuit of described aluminium base with ultrasonic bond or with silver slurry or tin, and two electrode contacts of described LED bare chip are welded on by two metal wires respectively and carry out the formal dress encapsulation on the described printed circuit.
8, the manufacture method of integrated LED chip light source according to claim 1 and 2, it is characterized in that: described LED bare chip is a flip-chip, in the described step (b), plant soldered ball on described printed circuit, by the method for ultrasonic bond flip-chip packaged is carried out in the upside-down mounting of described LED bare chip on described soldered ball again, described soldered ball is gold goal bolt or copper ball bolt or tin ball.
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| CN200910037729A CN101532612A (en) | 2009-03-10 | 2009-03-10 | Method for manufacturing integrated LED chip light source |
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| CN200910037729A CN101532612A (en) | 2009-03-10 | 2009-03-10 | Method for manufacturing integrated LED chip light source |
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| CN102157506A (en) * | 2010-01-22 | 2011-08-17 | 夏普株式会社 | Light emitting device |
| CN102157664A (en) * | 2011-01-13 | 2011-08-17 | 江苏永兴多媒体有限公司 | LED (light-emitting diode) lamp panel adopting sputtering circuit and production method thereof |
| CN102168844A (en) * | 2011-01-13 | 2011-08-31 | 江苏永兴多媒体有限公司 | LED lamp panel using printed circuit and production method thereof |
| CN102231419A (en) * | 2011-06-28 | 2011-11-02 | 广州市海林电子科技发展有限公司 | LED (light-emitting diode) packaging method and LED device packaged by using same |
| CN102456701A (en) * | 2010-10-26 | 2012-05-16 | 英特明光能股份有限公司 | Light-emitting device |
| CN102563391A (en) * | 2010-12-22 | 2012-07-11 | 深圳市长运通光电技术有限公司 | Led light source |
| CN102661541A (en) * | 2012-04-23 | 2012-09-12 | 江阴浩瀚光电科技有限公司 | Light-emitting diode (LED) light engine module |
| WO2014008773A1 (en) * | 2012-07-09 | 2014-01-16 | 厦门吉瓦特照明科技有限公司 | Method of fabricating surface-mounted led module |
| US8669568B2 (en) | 2010-10-13 | 2014-03-11 | Interlight Optotech Corporation | Light emitting device usable for variable driving voltages |
| CN104282831A (en) * | 2014-09-24 | 2015-01-14 | 惠州市英吉尔光电科技有限公司 | LED packaging structure and technique |
| CN104538536A (en) * | 2014-12-17 | 2015-04-22 | 陕西科技大学 | Integrated LED plant growth lamp and manufacturing method thereof |
| CN104617206A (en) * | 2015-01-23 | 2015-05-13 | 陕西科技大学 | Red-light LED (light-emitting diode) lamp capable of accelerating ripening of fruits and preparation method thereof |
| WO2015161652A1 (en) * | 2014-04-25 | 2015-10-29 | 陈弘昌 | Mounting method for self-adhesion substrate |
| WO2016077992A1 (en) * | 2014-11-18 | 2016-05-26 | 何素华 | Led module group |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102157506A (en) * | 2010-01-22 | 2011-08-17 | 夏普株式会社 | Light emitting device |
| CN102157506B (en) * | 2010-01-22 | 2014-12-24 | 夏普株式会社 | Light emitting device |
| US8669568B2 (en) | 2010-10-13 | 2014-03-11 | Interlight Optotech Corporation | Light emitting device usable for variable driving voltages |
| CN102456701B (en) * | 2010-10-26 | 2013-11-13 | 英特明光能股份有限公司 | Light-emitting device |
| CN102456701A (en) * | 2010-10-26 | 2012-05-16 | 英特明光能股份有限公司 | Light-emitting device |
| CN102563391A (en) * | 2010-12-22 | 2012-07-11 | 深圳市长运通光电技术有限公司 | Led light source |
| CN102168844A (en) * | 2011-01-13 | 2011-08-31 | 江苏永兴多媒体有限公司 | LED lamp panel using printed circuit and production method thereof |
| CN102157664B (en) * | 2011-01-13 | 2013-03-20 | 江苏永兴多媒体有限公司 | LED (light-emitting diode) lamp panel adopting sputtering circuit and production method thereof |
| CN102157664A (en) * | 2011-01-13 | 2011-08-17 | 江苏永兴多媒体有限公司 | LED (light-emitting diode) lamp panel adopting sputtering circuit and production method thereof |
| CN102231419A (en) * | 2011-06-28 | 2011-11-02 | 广州市海林电子科技发展有限公司 | LED (light-emitting diode) packaging method and LED device packaged by using same |
| CN102661541A (en) * | 2012-04-23 | 2012-09-12 | 江阴浩瀚光电科技有限公司 | Light-emitting diode (LED) light engine module |
| WO2014008773A1 (en) * | 2012-07-09 | 2014-01-16 | 厦门吉瓦特照明科技有限公司 | Method of fabricating surface-mounted led module |
| WO2015161652A1 (en) * | 2014-04-25 | 2015-10-29 | 陈弘昌 | Mounting method for self-adhesion substrate |
| CN104282831A (en) * | 2014-09-24 | 2015-01-14 | 惠州市英吉尔光电科技有限公司 | LED packaging structure and technique |
| WO2016077992A1 (en) * | 2014-11-18 | 2016-05-26 | 何素华 | Led module group |
| CN104538536A (en) * | 2014-12-17 | 2015-04-22 | 陕西科技大学 | Integrated LED plant growth lamp and manufacturing method thereof |
| CN104617206A (en) * | 2015-01-23 | 2015-05-13 | 陕西科技大学 | Red-light LED (light-emitting diode) lamp capable of accelerating ripening of fruits and preparation method thereof |
| CN104617206B (en) * | 2015-01-23 | 2017-05-17 | 陕西科技大学 | Red-light LED (light-emitting diode) lamp capable of accelerating ripening of fruits and preparation method thereof |
| CN106684075A (en) * | 2017-02-16 | 2017-05-17 | 张虹 | High-light efficiency light source assembly and preparation method thereof |
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Open date: 20090916 |