CN101350321A - Method for manufacturing LED directly mounted on a support upside-down - Google Patents
Method for manufacturing LED directly mounted on a support upside-down Download PDFInfo
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- CN101350321A CN101350321A CNA2007100292207A CN200710029220A CN101350321A CN 101350321 A CN101350321 A CN 101350321A CN A2007100292207 A CNA2007100292207 A CN A2007100292207A CN 200710029220 A CN200710029220 A CN 200710029220A CN 101350321 A CN101350321 A CN 101350321A
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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Abstract
The invention relates to a process for preparing a luminescent diode which is directly and inversely installed in a support, in a support, a single chip or a plurality of chips are directly and inversely installed on the support through metallic salient points. The method saves the steps of fixing a wafer by a chip and bonding by a gold wire, thereby the manufacturing cost is reduced, and the manufacturing efficiency is improved, the heat resistance is reduced, and the heat dissipating problem of a power type chip is solved, the light trapping problem of a bonding pad and a lead wire during the packing of a small size LED is solved, and the luminous efficiency of the LED is greatly improved, the further miniaturization of the packing size of the LED is realized, and the increased requirements of the market to the miniaturization packing are satisfied.
Description
Technical field
The present invention relates to the manufacturing assembling field of light-emitting diode, the manufacturing method for LED of especially a kind of direct upside-down mounting in support.
Background technology
The structure of traditional gallium nitrate based (GaN) light-emitting diode (LED) is that the epitaxial crystal layer that forms the nitride multilayer gallium on sapphire (sapphire) substrate is made.Shown in Fig. 1-1 and Fig. 1-2, on the p type island region territory and N type zone of led chip 1, form metal electrode respectively: P electrode 2 and N electrode 3.The common assemble method of tradition LED is, led chip mounted with interface Heat Conduction Material (TIM) 4 be fixed in the package support 5, connect the pad 7 of metal electrode 2 on the LED device, metal electrode 3 and package support by gold thread 6 bondings (Wire Bonding).Wherein, the metal electrode of led chip makes progress, and fixed placement is on a substrate.After gold thread bonding (Wire Bonding) is finished, use high transparent resin that led chip is sealed, with protection luminescent device and encapsulating structure.If use the surface adhesion type support, the electrode 8 of 7 calcaneus branches framves of pad outside of support connects conducting by metal.
The blue-light LED chip 1 of encapsulation in traditional side bright dipping SMD support, shown in Fig. 4-1 and Fig. 4-2, pad with gold thread 6 bondings on the chip 1 has just accounted for the very big area of chip, and need stay the space of routing, so chip also can only account in the support the very area of fraction, in this case, the space that single LED lamp brightness improves is just very little, and bonding pad area and gold thread all hinder bright dipping, influenced the luminous brightness of LED.
Along with market to the improving constantly of LED performance requirement, the continuous expansion of range of application, above-mentioned traditional LED make and encapsulation on exist many defectives just to become the bottleneck that restriction LED uses.For the encapsulation of power-type chip, maximum defective is the heat dissipation problem of high-power chip.The power of led chip is big more, and the heat dissipation problem of traditional die encapsulating structure is just outstanding more.Because the heat conduction parameter of interface Heat Conduction Material 4 is restricted.For the encapsulation of small size LED, maximum defective is exactly that the bright dipping of LED is limited.The welding gold thread needs the pad of certain size, and bonding pad area and gold thread all hinder bright dipping, and along with the LED size is more and more littler, the influence of pad and gold thread is more and more significant, thereby the further miniaturization of restriction LED can't be satisfied the demand in market.For the encapsulation of multi-chip LED, no matter be power-type and common power type, the increase of the gold thread quantity of bonding and the reliability of a plurality of solder joints all become the restriction of multicore sheet assembling development.
Summary of the invention
The objective of the invention is deficiency at the above traditional LED existence, the manufacturing method for LED of a kind of direct upside-down mounting in support is provided, one chip or multicore sheet have been realized, directly upside-down mounting is in support, omitted the step of solid crystalline substance and bonding wire, greatly reduce the cost that encapsulation is made, improved the reliability of multi-chip modules simultaneously, solved the heat dissipation problem of power-type chip.
The manufacturing method for LED of a kind of direct upside-down mounting in support, a minimum light-emitting diode chip for backlight unit is directly to be installed in the support by metal salient point.
Described metal salient point can be on the P that is manufactured on light-emitting diode chip for backlight unit, the N electrode, and the P of light-emitting diode chip for backlight unit, N electrode directly are connected with the interior metal pad upside-down mounting corresponding to P, N electrode of support then; Perhaps metal salient point is to be manufactured on the support, and light-emitting diode chip for backlight unit directly is connected with the metal salient point upside-down mounting by the metal pad of P, N electrode then.
Described metal salient point can form by the mode that electroplating technology or machinery are planted; The material of metal salient point can be material single in lead, tin, gold, the copper or eutectic alloy; The material of the metal pad of P, N electrode can be single material, multilayer material or alloy in nickel, gold, silver, aluminium, titanium, tungsten, the cadmium etc., and the thickness of pad is 0.5～10 micron.
Described metal salient point can be to decide technology with the mode of Reflow Soldering or with adding hyperacoustic nation after the heating with the bonding process of metal pad.
Described support can comprise surface adhesion type (SMD), direct insertion support, the support of side bright dipping (Side View), the support of positive bright dipping, single-chip support, multicore plate rack; The material of support can be resin, metal or pottery.
Described light-emitting diode chip for backlight unit can be single one;
Described light-emitting diode chip for backlight unit can be more than two and two;
Described light-emitting diode chip for backlight unit can be the combination of different size, different colours chip.
Described light-emitting diode chip for backlight unit can be the multicore sheet combination of the full-color demonstration usefulness of red, green, blue (RGB); Perhaps double-colored or monochromatic chip module.
Described red chip can be that the form by the gold thread bonding connects, and blue light, green glow chip be by upside-down mounting not the form of routing be assembled in the support.
The method of flip welding LED chip of the present invention has following advantage: 1, light-emitting diode chip for backlight unit directly connects with support by metal salient point, one chip or multicore sheet have been realized, directly upside-down mounting is in support, omitted the step of solid crystalline substance and bonding wire, greatly reduce the encapsulation manufacturing cost, improved the reliability of multi-chip modules simultaneously.2, the all-metal passage of heat of the present invention's realization has reduced thermal resistance, for the power-type chip, has solved the heat dissipation problem of power-type chip.3, light-emitting diode chip for backlight unit directly connects with support by metal salient point, solid crystalline substance and bonding wire have been omitted, solved the problem that is in the light of pad and lead-in wire in the undersized LED encapsulation, increased substantially the light extraction efficiency of LED, realize the further miniaturization of LED package dimension, satisfied the requirement that market encapsulates miniaturization day by day.
Description of drawings
Fig. 1-1 is packaged in the cross-sectional view of SMD support for traditional LED;
Fig. 1-2 is assembled in the plan structure schematic diagram of SMD support for traditional led chip;
Fig. 2-1 directly is assembled in the cross-sectional view of SMD support for led chip of the present invention;
Fig. 2-2 directly is assembled in the structural representation of looking up of SMD support for led chip of the present invention;
Fig. 3-1 directly is assembled on the ceramic SMD support for RGB of the present invention, and red chip also needs the cross-sectional view of a gold thread bonding;
Fig. 3-2 directly is assembled on the ceramic SMD support for RGB of the present invention, and red chip does not need a gold thread bonding cross-sectional view;
Fig. 4-1 is packaged in cross-sectional view in the side bright dipping SMD support for traditional die;
Fig. 4-2 is packaged in plan structure schematic diagram in the side bright dipping SMD support for traditional die;
Fig. 4-3 directly is assembled in the interior cross-sectional view of side bright dipping SMD support for flip-chip of the present invention;
Fig. 4-4 is that flip-chip of the present invention directly is assembled in the structural representation of looking up in the side bright dipping SMD support.
Embodiment
The present invention will be described in detail below in conjunction with the drawings and specific embodiments.
The manufacturing method for LED of the direct upside-down mounting of the present invention in support is to use various chips assembling (Multi-Chip Module Assembly) technology and face-down bonding technique (Flip-Chip Technology), with one or more light-emitting diode chip for backlight unit 1 direct upside-down mounting in support 5, omitted the step of solid crystalline substance and bonding wire, greatly reduce the encapsulation manufacturing cost, and improved the reliability of multi-chip modules greatly.Shown in Fig. 2-1 and Fig. 2-2; led chip is through over etching; layer metal deposition; series of steps such as the protection of passivation layer; P electrode 2 and N electrode 3 are made, then led chip is overturn, by the technology of upside-down mounting; the led chip flip chip bonding is connected on above the support 5, connect led chip 1 and support 5 respective electrode pad 7 be metal salient point 9.The electrode 8 of 7 calcaneus branches frame 5 outsides of the pad of surface adhesion type support 5 connects conducting by metal.Metal salient point 9 can be to be produced on the pad of support 5, also is made on the P electrode 2 and N electrode 3 of led chip.Metal salient point 9 can be the mode of Reflow Soldering with the bonding process of metal pad, also can be to add fixed (TS-Bonding) process of hyperacoustic nation after the heating, requires metal salient point with metal pad fine infiltration to be arranged after heating.Add fixed (TS-Bonding) technology of hyperacoustic nation after the heating and be ultrasonic wave and pressure-loaded on metal salient point 9, utilize hyperacoustic energy that metal salient point 9 is welded on the metal pad of correspondence.
The material of metal salient point 9 is plumbous, tin, and gold etc. can be homogenous materials, also can be eutectic alloys; The processing technology of metal salient point 9 materials can be an electroplating technology, also can be the mode that machinery is planted.The mode that machinery is planted is with the principle of gold thread bonding, forms gold goal on P, N electrode, cuts off gold thread then, stays one section on P, N electrode, by the metal salient point 9 of this section gold thread as connection support 5 in the upside-down mounting process.The material of the metal pad of P, N electrode is a nickel, gold, and silver, aluminium etc. can be above-mentioned homogenous materials, also can be above-mentioned multilayer material or alloy.The thickness of pad is between 0.5～10 micron, and optimal value is 2 microns.Support 5 materials can be resins, also can be potteries, metal.
The present invention improves the LED device fabrication, and the package support manufacturing and the assembling of the requirement of corresponding flip chip bonding led chip, thereby has reduced manufacturing cost, has improved the efficient of making; Be applicable to multiple led chip, comprise led chip, traditional led chip of gold thread bonding, the flip chip bonding IED chip of different chip sizes, different wave length.
Below by the multicore sheet embodiment of a ceramics bracket and the detailed manufacturing method for LED of the direct upside-down mounting of explanation the present invention in support of example of a side bright dipping single-chip.
Embodiment 1:
At the technology used in the present invention, method and design, now use bright dipping support on the surface adhesion type that the redgreenblue chip uses, timbering material is a thermal conductive ceramic.Shown in Fig. 3-2 and Fig. 3-2, led chip is with three kinds: blue chip 11 and green glow chip 12 are gallium nitrate based, and red light chips 13 is quaternary chips.Blue light adopts flip chip technology (fct) with the chip of green glow, and P electrode and N electrode are in the same side; What red light chips adopted is conventional chip, and the P electrode is last, the N electrode below, in the present embodiment, red light chips still needs solid crystalline substance, needs gold thread 6 of bonding to link to each other with the pad 7 of support 5 then on the P electrode.The chip of blue light and green glow all passes through flip chip technology, and directly upside-down mounting is on the metal salient point 9 of support 5 correspondences.
Making step is as follows:
The first step designs and makes the full-color SMD of using support.The overall dimensions of used support, reflective rim of a cup size all follows SMD support commonly used in the market similar, the metal pins 8 of the support of SMD is also identical with conventional SMD support, difference is exactly the size of support the inside metal pad and changes of arranging, on pad by electroplating or technology that machinery is planted is fabricated into pad on the support 5 to the metal salient point 9 that is used to connect blue light, green glow and support pad.The material of metal salient point 9 is terne metals, also can be gold goal.
Second step was exactly the manufacturing of flip-chip.The manufacture process of chip comprises the gallium nitride etching, the manufacturing of P district 2 and N district 3 electrode materials, and the contact electrode height in P district of Xing Chenging and N district is identical at last, in the same side.The P district 2 of chip and the electrode material in N district 3 can be Ni/Au, and thickness is 100nm/500nm.The P district N region electrode of chip is corresponding with the N district, P district of support.
The 3rd step was exactly earlier red LED chip 13 to be assembled in the support 5 by solid mode brilliant and gold thread 6 bondings.
The 4th step was exactly to utilize upside-down mounting nation to decide board (TS-Bonding) blue light, green glow flip-chip are welded on support 5 corresponding bonding pad 7.It can be that the upside-down mounting nation that ASM company produces decides board (TS-Bonding) that upside-down mounting nation decides board (TS-Bonding).
Pass through above-mentioned steps, realize mainly utilizing the mode of flip chip bonding that three chipsets of RGB are loaded in the support 5, with traditional full-color SMD LED relatively, omitted the solid crystalline substance of blue light and green glow chip, the step of gold thread bonding, five gold threads original reduce to one.Because at present ruddiness still utilizes traditional upper/lower electrode chip, so continue to use traditional solid crystal type, a gold thread 6 that need connect between the positive pole of the P of red light chips electrode with support also is shown in Fig. 3-1.Red light chips 13 also can connect by metal salient point 9 calcaneus branches framves 5 pads 7, and the situation of solid crystalline substance, gold thread bonding that dispenses red light chips is shown in Fig. 3-2.
Embodiment 2:
At the technology used in the present invention, method and design, now use single-chip with surface adhesion type side bright dipping support 5, shown in Fig. 4-3,4-4, timbering material is poly-terephthalate p-phenylenediamine (PPD) (PPA), the white resin material that a kind of support is commonly used.Chip is the gallium nitride base blue light led chip, and blue chip surface applied gold-tinted fluorescent material forms white light.This scheme is applicable to the LED of usefulness backlight small-sized side bright dipping.Market is more and more littler to the package dimension requirement of LED, and the brightness demand is more and more brighter.Under the prerequisite that the physical size of support can not further reduce, the raising of chip aspect is just extremely important like this.
Making step is as follows:
The first step, design and manufacturing side bright dipping SMD support 5.The overall dimensions of used support 5, rim of a cup size all follow SMD support in the market similar, and difference is exactly that the size of the inside pad changes to some extent, with the metal level cooperation with the P district of chip, N district.With the technology difference of present support is exactly by electroplating technique the metal salient point 9 of the pad 7 that is used to connect blue chip 1 and support 5 to be fabricated into pad 7 on the support 5 on pad.The material of the metal salient point 9 here is a gold goal.
Second step was exactly the manufacturing of flip-chip.The manufacture process of chip comprises the gallium nitride etching, the manufacturing of P district 2 and N district 3 electrode materials, and the contact electrode height in P district of Xing Chenging and N district is identical at last, in the same side.The P district 2 of chip and the electrode material in N district 3 can be Ni/Au, and thickness is 100nm/500nm.The P district N region electrode of chip is corresponding with the N district, P district of support.
The 3rd step was exactly to utilize upside-down mounting nation to decide board (TS-Bonding) blue chip 1 upside-down mounting is welded on the metal salient point 9 of support 5 correspondences.It can be that the upside-down mounting nation that ASM company produces decides board (TS-Bonding) that upside-down mounting nation decides board (TS-Bonding).
The 4th step was exactly the coating of fluorescent material, and this coated technique is identical with the technology of present industry.
By above-mentioned steps, realized blue chip directly is assembled in the support, go out SMD LED relatively with traditional side, omitted the solid crystalline substance of blue chip, the step of gold thread bonding, area of chip can occupy most of effective area of support; Greatly reduce cost.Flip-chip is compared with the led chip of the relevant gold thread bonding of tradition, for example uses the chip of 12mil equally, owing to can not stop bright dipping to led chip P district contact layer, lighting area can improve 10%.Be the support of the traditional 12mil chip of encapsulation equally, can the twice flip-chip of packaged chip area, the brightness that can improve single LED lamp greatly.Certainly under the situation that the support physical size allows, can be easy to realize the LED encapsulation of more miniaturization with flip-chip.
The above only is two implementation examples among the present invention, and non-limiting the scope of the present invention.All similar variation and modifications of being done according to claim protection range of the present invention are content of the present invention and contain.
Claims (10)
1, the manufacturing method for LED of a kind of direct upside-down mounting in support is characterized in that: in support, a minimum light-emitting diode chip for backlight unit be by the direct upside-down mounting of metal salient point on support.
2, the manufacturing method for LED of direct upside-down mounting as claimed in claim 1 in support, it is characterized in that: described metal salient point is on the P that is manufactured on light-emitting diode chip for backlight unit, the N electrode, and the P of light-emitting diode chip for backlight unit, N electrode directly are connected with the interior metal pad upside-down mounting corresponding to P, N electrode of support then; Perhaps metal salient point is to be manufactured on the support, and the metal pad of the P of luminous diode chip, N electrode directly is connected with the metal salient point upside-down mounting then.
3, the manufacturing method for LED of direct upside-down mounting as claimed in claim 2 in support, it is characterized in that: the mode that described metal salient point is planted by electroplating technology or machinery forms, and the material of metal salient point is material or an eutectic alloy single in lead, tin, the gold; The material of the metal pad of P, N electrode is material, multilayer material or an alloy single in nickel, gold, silver, the aluminium, and the thickness of pad is 0.5～10 micron.
4, the manufacturing method for LED of direct upside-down mounting as claimed in claim 2 in support is characterized in that: described metal salient point is to decide technology with adding hyperacoustic nation after the mode of Reflow Soldering or the heating with the bonding process of metal pad.
5, the manufacturing method for LED of direct upside-down mounting as claimed in claim 1 in support is characterized in that: described support comprises support, single-chip support, the multicore plate rack of surface adhesion type, direct insertion support, the support of side bright dipping, positive bright dipping; The material of support is resin, metal or pottery.
6, the manufacturing method for LED of direct upside-down mounting as claimed in claim 1 in support is characterized in that: described light-emitting diode chip for backlight unit is a single chip.
7, the manufacturing method for LED of direct upside-down mounting as claimed in claim 1 in support, it is characterized in that: described light-emitting diode chip for backlight unit is two or more.
8, the manufacturing method for LED of direct upside-down mounting as claimed in claim 7 in support is characterized in that: described light-emitting diode chip for backlight unit is the combination of different size, different colours chip.
9, the manufacturing method for LED of direct upside-down mounting as claimed in claim 7 in support is characterized in that: described light-emitting diode chip for backlight unit is the multicore sheet combination of the full-color demonstration usefulness of red, green, blue (RGB), double-colored chip module or monochromatic chip module.
10, the manufacturing method for LED in support as claim 9 or 8 described direct upside-down mountings, it is characterized in that: described red chip is that the form by the gold thread bonding connects, and blue light, green glow chip be by upside-down mounting not the form of routing be assembled in the support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100292207A CN101350321A (en) | 2007-07-18 | 2007-07-18 | Method for manufacturing LED directly mounted on a support upside-down |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100292207A CN101350321A (en) | 2007-07-18 | 2007-07-18 | Method for manufacturing LED directly mounted on a support upside-down |
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| Publication Number | Publication Date |
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| CN101350321A true CN101350321A (en) | 2009-01-21 |
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| CNA2007100292207A Pending CN101350321A (en) | 2007-07-18 | 2007-07-18 | Method for manufacturing LED directly mounted on a support upside-down |
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Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958389A (en) * | 2010-07-30 | 2011-01-26 | 晶科电子（广州）有限公司 | LED surface mounting structure for silicon substrate integrated with functional circuits and packaging method thereof |
| CN102157630A (en) * | 2010-12-28 | 2011-08-17 | 哈尔滨工业大学 | Single-substrate multi-chipset high-power LED (Light-Emitting Diode) encapsulation one-step bonding method |
| CN102661496A (en) * | 2012-04-09 | 2012-09-12 | 深圳市华星光电技术有限公司 | LED (light-emitting diode) light source and corresponding backlight module |
| CN102790160A (en) * | 2011-05-16 | 2012-11-21 | 隆达电子股份有限公司 | Wire bonding structure |
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| CN105489577A (en) * | 2015-12-28 | 2016-04-13 | 江阴长电先进封装有限公司 | Wafer-level chip packaging structure with wet side edge |
| CN105702831A (en) * | 2016-01-19 | 2016-06-22 | 深圳市华天迈克光电子科技有限公司 | Full-color SMD display screen support and die bonding and wire soldering method thereof |
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| CN107240631A (en) * | 2017-07-28 | 2017-10-10 | 厦门多彩光电子科技有限公司 | Method for packing, packaging tool and the packaging body of LED flip chip |
| CN108735879A (en) * | 2018-07-26 | 2018-11-02 | 易美芯光（北京）科技有限公司 | A kind of SMD encapsulating structures containing quantum dot |
| CN109161944A (en) * | 2018-08-02 | 2019-01-08 | 深圳市源磊科技有限公司 | A kind of LED support electro-plating method and LED support |
| CN109273576A (en) * | 2018-09-20 | 2019-01-25 | 科宏光电(深圳)有限公司 | A kind of upside-down mounting indigo plant white-light nixie tube and its production method |
| CN109471299A (en) * | 2018-11-22 | 2019-03-15 | 京东方科技集团股份有限公司 | Light source, display module and lighting device |
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| CN110707203A (en) * | 2019-09-04 | 2020-01-17 | 厦门三安光电有限公司 | Light emitting device, manufacturing method thereof and light emitting device module comprising light emitting device |
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2007
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| CN101958389A (en) * | 2010-07-30 | 2011-01-26 | 晶科电子（广州）有限公司 | LED surface mounting structure for silicon substrate integrated with functional circuits and packaging method thereof |
| CN102157630A (en) * | 2010-12-28 | 2011-08-17 | 哈尔滨工业大学 | Single-substrate multi-chipset high-power LED (Light-Emitting Diode) encapsulation one-step bonding method |
| CN102790160A (en) * | 2011-05-16 | 2012-11-21 | 隆达电子股份有限公司 | Wire bonding structure |
| CN102790160B (en) * | 2011-05-16 | 2016-04-13 | 隆达电子股份有限公司 | Wire bonding structure |
| CN102661496A (en) * | 2012-04-09 | 2012-09-12 | 深圳市华星光电技术有限公司 | LED (light-emitting diode) light source and corresponding backlight module |
| CN102661496B (en) * | 2012-04-09 | 2015-06-17 | 深圳市华星光电技术有限公司 | LED (light-emitting diode) light source and corresponding backlight module |
| CN103489843A (en) * | 2012-06-15 | 2014-01-01 | 安阳朗都电气有限公司 | Metal-oxide semiconductor chip electrode bonding pad and manufacturing method thereof |
| CN103489843B (en) * | 2012-06-15 | 2016-03-23 | 安阳朗都电气有限公司 | A kind of metal-oxide semiconductor chip electrode pad and preparation method thereof |
| CN105304805B (en) * | 2014-05-29 | 2019-02-19 | Lg伊诺特有限公司 | Light emitting device package |
| CN105304805A (en) * | 2014-05-29 | 2016-02-03 | Lg伊诺特有限公司 | Light emitting device package |
| CN104600172A (en) * | 2014-09-10 | 2015-05-06 | 广东长盈精密技术有限公司 | Flip chip type LED (light-emitting diode) bracket and manufacturing method thereof |
| CN104465634A (en) * | 2014-12-04 | 2015-03-25 | 中山市川祺光电科技有限公司 | Chip pasting structure of SMD LED lamp and manufacturing method thereof |
| CN105042391A (en) * | 2015-07-24 | 2015-11-11 | 奉化市天明灯饰有限公司 | Manufacturing method of fluorescent crystal LED Christmas lamp string |
| CN105489577A (en) * | 2015-12-28 | 2016-04-13 | 江阴长电先进封装有限公司 | Wafer-level chip packaging structure with wet side edge |
| CN105489577B (en) * | 2015-12-28 | 2018-06-26 | 江阴长电先进封装有限公司 | A kind of level chip encapsulating structure of side wetting |
| CN105702831A (en) * | 2016-01-19 | 2016-06-22 | 深圳市华天迈克光电子科技有限公司 | Full-color SMD display screen support and die bonding and wire soldering method thereof |
| CN106783834A (en) * | 2017-01-09 | 2017-05-31 | 丽智电子(昆山)有限公司 | A kind of modular photodiode encapsulation making method |
| CN107240631A (en) * | 2017-07-28 | 2017-10-10 | 厦门多彩光电子科技有限公司 | Method for packing, packaging tool and the packaging body of LED flip chip |
| CN107240631B (en) * | 2017-07-28 | 2023-08-11 | 江苏穿越光电科技有限公司 | Packaging method, packaging jig and packaging body of LED flip chip |
| CN108735879A (en) * | 2018-07-26 | 2018-11-02 | 易美芯光（北京）科技有限公司 | A kind of SMD encapsulating structures containing quantum dot |
| CN109161944A (en) * | 2018-08-02 | 2019-01-08 | 深圳市源磊科技有限公司 | A kind of LED support electro-plating method and LED support |
| CN109273576A (en) * | 2018-09-20 | 2019-01-25 | 科宏光电(深圳)有限公司 | A kind of upside-down mounting indigo plant white-light nixie tube and its production method |
| CN109471299A (en) * | 2018-11-22 | 2019-03-15 | 京东方科技集团股份有限公司 | Light source, display module and lighting device |
| CN110242877A (en) * | 2019-04-12 | 2019-09-17 | 华芯半导体研究中心(广州)有限公司 | A kind of high heat dissipation high-power LED lamp bead and preparation method thereof |
| CN110094656A (en) * | 2019-04-20 | 2019-08-06 | 林少立 | A kind of simple panel lamp bar |
| CN110265865A (en) * | 2019-05-23 | 2019-09-20 | 深圳新飞通光电子技术有限公司 | A kind of assemble method of the biradical seat of chip of laser |
| CN110707203A (en) * | 2019-09-04 | 2020-01-17 | 厦门三安光电有限公司 | Light emitting device, manufacturing method thereof and light emitting device module comprising light emitting device |
| CN112786460A (en) * | 2019-11-08 | 2021-05-11 | 珠海格力电器股份有限公司 | Chip packaging method and chip packaging module |
| CN112786460B (en) * | 2019-11-08 | 2023-04-18 | 珠海格力电器股份有限公司 | Chip packaging method and chip packaging module |
| CN111584376A (en) * | 2020-05-26 | 2020-08-25 | 如皋市大昌电子有限公司 | Rapid assembly process of surface mount diode |
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