CN103489843B - A kind of metal-oxide semiconductor chip electrode pad and preparation method thereof - Google Patents
A kind of metal-oxide semiconductor chip electrode pad and preparation method thereof Download PDFInfo
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- CN103489843B CN103489843B CN201210197011.4A CN201210197011A CN103489843B CN 103489843 B CN103489843 B CN 103489843B CN 201210197011 A CN201210197011 A CN 201210197011A CN 103489843 B CN103489843 B CN 103489843B
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Abstract
A kind of metal-oxide semiconductor chip electrode pad, it comprises metal-oxide semiconductor (MOS) chip, and the both sides of metal-oxide semiconductor (MOS) chip are electrode pad material eutectic layer, and the outside of electrode pad material eutectic layer is electrode pad; Wherein, electrode pad material eutectic layer is made up of jointly metal-oxide semiconductor (MOS) chip material and electrode pad material.Decrease impurity in eutectic layer between metal-oxide semiconductor (MOS) chip of the present invention and electrode pad, make the performance of metal-oxide semiconductor (MOS) chip more stable; Eliminate the impurity in metal-oxide semiconductor chip electrode pad, cavity and gap, metal-oxide semiconductor (MOS) chip can not to be blasted damage under pulse current impacts, improves the through-current capability of metal-oxide semiconductor (MOS) chip; Decrease the accelerated oxidation of electrode pad, improve the solderability of metal-oxide semiconductor chip electrode pad.
Description
Technical field
The present invention relates to a kind of semiconductor chip electrode pad, especially make the metal oxide semiconductor material formed under vacuum conditions between metal-oxide semiconductor (MOS) chip material and electrode pad material---the metal-oxide semiconductor chip electrode pad of the eutectic layer of electrode pad material.
Background technology
At present, the formation of the metal-oxide semiconductor chip electrode pad of known through-current capability more than kilo-ampere electric current mainly contains swabbing and metal spraying technique.Swabbing technique be adopt the metal dust be made up of electrode pad material and chemical raw material to be mixed with liquid slurry brush on the electrode surface of metal-oxide semiconductor (MOS) chip, after enter in stove and fire, process is with suitable temperature the composition except electrode pad material metal powder in slurry burnt to cause and vapor away, electrode pad material metal powder and metal-oxide semiconductor (MOS) chip material is made to be grown to serve as conducting metal face at a certain temperature, metal-oxide semiconductor (MOS) chip material is formed as between metal-oxide semiconductor (MOS) chip and conducting metal face---electrode pad material eutectic layer, so just by metal-oxide semiconductor (MOS) chip material, eutectic layer, conducting metal face is configured to the electrode pad of metal-oxide semiconductor (MOS) chip jointly.But, during semiconductor chip after brush system was fired, can not burn completely because the chemical raw material material in slurry is covered by metal dust and cause volatilization and form impurity, cavity, gap, these impurity, cavity, gap is closed in the electrode pad of metal-oxide semiconductor (MOS) chip, when metal-oxide semiconductor chip electrode pad is by pulse high-voltage, at impurity, the two sides in cavity and gap forms partial potential difference, when potential difference is higher than these impurity, when cavity and the puncture voltage in gap, they will be breakdown and wherein air undergoes rapid expansion makes it to blast, cause metal-oxide semiconductor (MOS) wafer damage, and in the eutectic layer of semiconductor chip material, impurity can affect again the electric conductivity parameter of metal-oxide semiconductor (MOS) chip, electrode pad material accelerated oxidation can be produced firing in volatilization process, reduce the solderability of electrode pad material.Equally, for metal spraying technique, also there is impurity and cavity in its metal-oxide semiconductor (MOS) chip metal coating electrode, still can there is the above results.
Summary of the invention
The object of this invention is to provide the metal-oxide semiconductor chip electrode pad that a kind of through-current capability is good, reliability is high, the method preparing above-mentioned electrode pad is provided simultaneously.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of metal-oxide semiconductor chip electrode pad, it comprises metal-oxide semiconductor (MOS) chip, and the both sides of metal-oxide semiconductor (MOS) chip are electrode pad material eutectic layer, and the outside of electrode pad material eutectic layer is electrode pad; Wherein, electrode pad material eutectic layer is made up of jointly metal-oxide semiconductor (MOS) chip material and electrode pad material.
The material of described electrode pad is copper, aluminium or silver.
Prepare a method for above-mentioned metal-oxide semiconductor chip electrode pad, first, metal-oxide semiconductor (MOS) chip is placed in vacuum environment, make metal-oxide semiconductor (MOS) chip connect direct voltage source simultaneously, and form electric field; Secondly, metal-oxide semiconductor (MOS) chip is heated until fusing appears in its surface; After stopping heating, unlocking electronic bundle controller makes beam bombardment electrode pad material target, the molecule of overflowing from electrode pad material target or micel are adsorbed on the metal-oxide semiconductor (MOS) chip of surface melting under electric field action, after electrode pad material and metal-oxide semiconductor (MOS) chip material crystallisation solidification, form electrode pad material eutectic layer; Finally, the molecule of overflowing from electrode pad material target or micel continue to be adsorbed on electrode pad material eutectic layer surface under electric field action, form electrode pad.
Described vacuum environment is made up of the vacuum chamber be arranged in vacuum furnace.
Conducting metal cover is added at metal-oxide semiconductor (MOS) chip two ends; Vacuum furnace, direct voltage source and conducting metal cover are in turn connected to form electric field.
Temperature controlled heater is set in vacuum chamber, utilizes Temperature controlled heater to heat metal-oxide semiconductor (MOS) chip.
Adopt the present invention of technique scheme, decrease impurity in the eutectic layer between metal-oxide semiconductor (MOS) chip and electrode pad, make the performance of metal-oxide semiconductor (MOS) chip more stable; Eliminate the impurity in metal-oxide semiconductor chip electrode pad, cavity and gap, metal-oxide semiconductor (MOS) chip can not to be blasted damage under pulse current impacts, improves the through-current capability of metal-oxide semiconductor (MOS) chip; Decrease the accelerated oxidation of electrode pad, improve the solderability of metal-oxide semiconductor chip electrode pad.
In order to verify above-mentioned effect, the present invention does following test:
After the metal-oxide semiconductor (MOS) chip prior art of same batch of model and the technology of the present invention make two kinds of electrode pads, two kinds of electrode pads weld external electrode, test under identical testing equipment with identical environmental condition.Below with the metal-oxide semiconductor (MOS) chip of specifications and models 385V20KA for test example; The partial parameters of specifications and models 385V20KA is: rated voltage 385V, specified through-current capability 20 kilo-ampere, maximum current capacity 40 kilo-ampere.Pilot project is: leakage current test, specified 8/20 impulse current test, through-current capability test, 2.1 times to specified 8/20 the impulse current upper limit extreme value test.Result of the test sees the following form:
As can be seen from above-mentioned table, one of the performance parameter of metal-oxide semiconductor (MOS) chip leakage current is tested, test before prior art and difference of the present invention very little, after 8/20 impulse current shock-testing of specified through-flow 20 kilo-amperes, leakage current is apparently higher than the present invention, and this illustrates that the stability of prior art is not as the present invention; Through-current capability test is 8/20 impulse current that setting provides 40 kilo-amperes, through-flow test is carried out to metal-oxide semiconductor (MOS) chip, obviously can find out that the through-current capability of prior art is high not as the present invention, this illustrates that metal-oxide semiconductor chip electrode pad of the present invention does not have impurity, cavity, gap, flow area increases, its resistance value is less than prior art, compares and improves through-current capability; The electrode pad of metal-oxide semiconductor (MOS) chip is formed in a vacuum, heating is not fired in an atmosphere, its degree of oxidation is lower than prior art, when welding with external electrode, layer is more firm, owing to eliminating the impurity of metal-oxide semiconductor chip electrode pad in prior art, cavity and gap, so by blasting during pulse high current, from table, electrode pad experiment can be found out, electrode pad of the present invention is excellent under upper limit extreme value is impacted.
Accompanying drawing explanation
Fig. 1 is sectional structure chart of the present invention.
Fig. 2 is metal-oxide semiconductor chip electrode pad formation basic theory schematic diagram of the present invention.
Embodiment
As shown in Figure 1, a kind of metal-oxide semiconductor chip electrode pad, it comprises metal-oxide semiconductor (MOS) chip 1, and the both sides of metal-oxide semiconductor (MOS) chip 1 are electrode pad material eutectic layer 2, and the outside of electrode pad material eutectic layer 2 is electrode pad 3; Wherein, electrode pad material eutectic layer 2 is made up of jointly metal-oxide semiconductor (MOS) chip material and electrode pad material; The material of electrode pad 3 is the metals such as copper, aluminium or silver.
As shown in Figure 2, the preparation method of above-mentioned metal-oxide semiconductor chip electrode pad, first, is placed in vacuum environment by metal-oxide semiconductor (MOS) chip 1, and vacuum environment is made up of the vacuum chamber 4 be arranged in vacuum furnace 6; Add conducting metal cover 7 at metal-oxide semiconductor (MOS) chip 1 two ends, but preset for two of metal-oxide semiconductor (MOS) chip material 1 electrode pad must be showed out; Above-mentioned vacuum furnace 6, direct voltage source 5 and conducting metal cover 7 are in turn connected to form electric field.
Secondly, Temperature controlled heater 8, electron beam controller 10 and electrode pad material target 12 are set in vacuum chamber 4; Wherein, Temperature controlled heater 8 pairs of metal-oxide semiconductor (MOS) chips 1 are utilized to heat until fusing appears in its surface.Close Temperature controlled heater 8 to stop heating, unlocking electronic bundle controller 10 makes electron beam 11 bombarding electrode bonding pad material target 12, the molecule of overflowing from electrode pad material target 12 or micel 9 rush at two preset electrode pad faces under electric field action, thus are adsorbed on the metal-oxide semiconductor (MOS) chip 1 of surface melting.Along with the molecule of electrode pad material or micel 9 are increased by the absorption in two preset electrode pad faces of metal-oxide semiconductor (MOS) chip 1, two preset electrode pad faces meeting crystallisation solidification of metal-oxide semiconductor (MOS) chip 1, after electrode pad material and metal-oxide semiconductor (MOS) chip material crystallisation solidification, form electrode pad material eutectic layer 2.
Finally, the molecule of overflowing from electrode pad material target 12 or micel 9 continue to be adsorbed on electrode pad material eutectic layer 2 surface under electric field action, form electrode pad 3, finally make vacuum furnace 6 release of lowering the temperature take out metal-oxide semiconductor chip electrode pad.
Claims (6)
1. a metal-oxide semiconductor chip electrode pad; it is characterized in that: it comprises metal-oxide semiconductor (MOS) chip (1); the both sides of metal-oxide semiconductor (MOS) chip (1) are electrode pad material eutectic layer (2), and the outside of electrode pad material eutectic layer (2) is electrode pad (3); Wherein, electrode pad material eutectic layer (2) is made up of jointly metal-oxide semiconductor (MOS) chip material and electrode pad material; In the preparation, first, metal-oxide semiconductor (MOS) chip (1) is placed in vacuum environment, makes metal-oxide semiconductor (MOS) chip (1) connect direct voltage source (5) simultaneously, and form electric field; Secondly, metal-oxide semiconductor (MOS) chip (1) is heated until fusing appears in its surface; After stopping heating, unlocking electronic bundle controller (10) makes electron beam (11) bombarding electrode bonding pad material target (12), the molecule of overflowing from electrode pad material target (12) or micel are adsorbed on the metal-oxide semiconductor (MOS) chip (1) of surface melting under electric field action, after electrode pad material and metal-oxide semiconductor (MOS) chip material crystallisation solidification, form electrode pad material eutectic layer (2); Finally, the molecule of overflowing from electrode pad material target (12) or micel continue to be adsorbed on electrode pad material eutectic layer (2) surface under electric field action, form electrode pad (3).
2. metal-oxide semiconductor chip electrode pad according to claim 1, is characterized in that: the material of described electrode pad (3) is copper, aluminium or silver.
3. prepare a method for metal-oxide semiconductor chip electrode pad described in claim 1 or 2, it is characterized in that:
First, metal-oxide semiconductor (MOS) chip (1) is placed in vacuum environment, makes metal-oxide semiconductor (MOS) chip (1) connect direct voltage source (5) simultaneously, and form electric field;
Secondly, metal-oxide semiconductor (MOS) chip (1) is heated until fusing appears in its surface; After stopping heating, unlocking electronic bundle controller (10) makes electron beam (11) bombarding electrode bonding pad material target (12), the molecule of overflowing from electrode pad material target (12) or micel are adsorbed on the metal-oxide semiconductor (MOS) chip (1) of surface melting under electric field action, after electrode pad material and metal-oxide semiconductor (MOS) chip material crystallisation solidification, form electrode pad material eutectic layer (2);
Finally, the molecule of overflowing from electrode pad material target (12) or micel continue to be adsorbed on electrode pad material eutectic layer (2) surface under electric field action, form electrode pad (3).
4. the preparation method of metal-oxide semiconductor chip electrode pad according to claim 3, is characterized in that: described vacuum environment is made up of the vacuum chamber (4) be arranged in vacuum furnace (6).
5. the preparation method of metal-oxide semiconductor chip electrode pad according to claim 4, is characterized in that: add conducting metal cover (7) at metal-oxide semiconductor (MOS) chip (1) two ends; Vacuum furnace (6), direct voltage source (5) and conducting metal cover (7) are in turn connected to form electric field.
6. the preparation method of metal-oxide semiconductor chip electrode pad according to claim 4, it is characterized in that: Temperature controlled heater (8) is set in vacuum chamber (4), utilize Temperature controlled heater (8) to heat metal-oxide semiconductor (MOS) chip (1).
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| CN201210197011.4A CN103489843B (en) | 2012-06-15 | 2012-06-15 | A kind of metal-oxide semiconductor chip electrode pad and preparation method thereof |
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| CN201210197011.4A CN103489843B (en) | 2012-06-15 | 2012-06-15 | A kind of metal-oxide semiconductor chip electrode pad and preparation method thereof |
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| CN103489843B true CN103489843B (en) | 2016-03-23 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290891A (en) * | 2007-04-17 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Wafer stage encapsulation method of chip dimension |
| CN101350321A (en) * | 2007-07-18 | 2009-01-21 | 晶科电子（广州）有限公司 | Method for manufacturing LED directly mounted on a support upside-down |
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| US8916464B2 (en) * | 2008-12-29 | 2014-12-23 | International Business Machines Corporation | Structures and methods for improving solder bump connections in semiconductor devices |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290891A (en) * | 2007-04-17 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Wafer stage encapsulation method of chip dimension |
| CN101350321A (en) * | 2007-07-18 | 2009-01-21 | 晶科电子（广州）有限公司 | Method for manufacturing LED directly mounted on a support upside-down |
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